Reshanov, S. (2005). Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC.
Chicago-Zitierstil (17. Ausg.)Reshanov, Sergey. Device-relevant Defect Centers and Minority Carrier Lifetime in 3C-, 4H- and 6H-SiC. 2005.
MLA-Zitierstil (9. Ausg.)Reshanov, Sergey. Device-relevant Defect Centers and Minority Carrier Lifetime in 3C-, 4H- and 6H-SiC. 2005.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.