Reshanov, S. (2005). Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC.
Chicago Style (17th ed.) CitationReshanov, Sergey. Device-relevant Defect Centers and Minority Carrier Lifetime in 3C-, 4H- and 6H-SiC. 2005.
MLA (9th ed.) CitationReshanov, Sergey. Device-relevant Defect Centers and Minority Carrier Lifetime in 3C-, 4H- and 6H-SiC. 2005.
Warning: These citations may not always be 100% accurate.