Physics of semiconductor devices:
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Buch |
Sprache: | English |
Veröffentlicht: |
New York
Wiley
c 1981
|
Ausgabe: | 2. ed., 34. print. |
Schriftenreihe: | A Wiley-Interscience publication
|
Schlagworte: | |
Beschreibung: | XII, 868 S. zahlr. graph. Darst. |
ISBN: | 0471056618 |
Internformat
MARC
LEADER | 00000nam a2200000 c 4500 | ||
---|---|---|---|
001 | BV019713715 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | t | ||
008 | 050228s1981 d||| |||| 00||| eng d | ||
020 | |a 0471056618 |9 0-471-05661-8 | ||
035 | |a (OCoLC)7248763 | ||
035 | |a (DE-599)BVBBV019713715 | ||
040 | |a DE-604 |b ger |e rakwb | ||
041 | 0 | |a eng | |
049 | |a DE-19 | ||
050 | 0 | |a TK7871.85 | |
082 | 0 | |a 537.6/22 |2 19 | |
084 | |a ZN 4800 |0 (DE-625)157408: |2 rvk | ||
084 | |a PHY 685f |2 stub | ||
100 | 1 | |a Sze, Simon M. |e Verfasser |4 aut | |
245 | 1 | 0 | |a Physics of semiconductor devices |c S. M. Sze |
250 | |a 2. ed., 34. print. | ||
264 | 1 | |a New York |b Wiley |c c 1981 | |
300 | |a XII, 868 S. |b zahlr. graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a A Wiley-Interscience publication | |
650 | 7 | |a Halfgeleiders |2 gtt | |
650 | 7 | |a Natuurkunde |2 gtt | |
650 | 4 | |a Semiconducteurs | |
650 | 7 | |a Semicondutores Elementares |2 larpcal | |
650 | 4 | |a Physik | |
650 | 4 | |a Semiconductors | |
650 | 0 | 7 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Physikalische Eigenschaft |0 (DE-588)4134738-9 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |D s |
689 | 0 | 1 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
689 | 0 | 2 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
689 | 0 | |8 1\p |5 DE-604 | |
689 | 1 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
689 | 1 | 1 | |a Physikalische Eigenschaft |0 (DE-588)4134738-9 |D s |
689 | 1 | |8 2\p |5 DE-604 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-013041009 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804133168859578368 |
---|---|
any_adam_object | |
author | Sze, Simon M. |
author_facet | Sze, Simon M. |
author_role | aut |
author_sort | Sze, Simon M. |
author_variant | s m s sm sms |
building | Verbundindex |
bvnumber | BV019713715 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.85 |
callnumber-search | TK7871.85 |
callnumber-sort | TK 47871.85 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | ZN 4800 |
classification_tum | PHY 685f |
ctrlnum | (OCoLC)7248763 (DE-599)BVBBV019713715 |
dewey-full | 537.6/22 |
dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 537 - Electricity and electronics |
dewey-raw | 537.6/22 |
dewey-search | 537.6/22 |
dewey-sort | 3537.6 222 |
dewey-tens | 530 - Physics |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
edition | 2. ed., 34. print. |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01927nam a2200553 c 4500</leader><controlfield tag="001">BV019713715</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">050228s1981 d||| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0471056618</subfield><subfield code="9">0-471-05661-8</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)7248763</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV019713715</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-19</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6/22</subfield><subfield code="2">19</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4800</subfield><subfield code="0">(DE-625)157408:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 685f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sze, Simon M.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Physics of semiconductor devices</subfield><subfield code="c">S. M. Sze</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">2. ed., 34. print.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York</subfield><subfield code="b">Wiley</subfield><subfield code="c">c 1981</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XII, 868 S.</subfield><subfield code="b">zahlr. graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">A Wiley-Interscience publication</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Halfgeleiders</subfield><subfield code="2">gtt</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Natuurkunde</subfield><subfield code="2">gtt</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconducteurs</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semicondutores Elementares</subfield><subfield code="2">larpcal</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physik</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterschaltung</subfield><subfield code="0">(DE-588)4158811-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Physikalische Eigenschaft</subfield><subfield code="0">(DE-588)4134738-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterschaltung</subfield><subfield code="0">(DE-588)4158811-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Physikalische Eigenschaft</subfield><subfield code="0">(DE-588)4134738-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-013041009</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
id | DE-604.BV019713715 |
illustrated | Illustrated |
indexdate | 2024-07-09T20:04:26Z |
institution | BVB |
isbn | 0471056618 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-013041009 |
oclc_num | 7248763 |
open_access_boolean | |
owner | DE-19 DE-BY-UBM |
owner_facet | DE-19 DE-BY-UBM |
physical | XII, 868 S. zahlr. graph. Darst. |
publishDate | 1981 |
publishDateSearch | 1981 |
publishDateSort | 1981 |
publisher | Wiley |
record_format | marc |
series2 | A Wiley-Interscience publication |
spelling | Sze, Simon M. Verfasser aut Physics of semiconductor devices S. M. Sze 2. ed., 34. print. New York Wiley c 1981 XII, 868 S. zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier A Wiley-Interscience publication Halfgeleiders gtt Natuurkunde gtt Semiconducteurs Semicondutores Elementares larpcal Physik Semiconductors Halbleiterschaltung (DE-588)4158811-3 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf Halbleiterschaltung (DE-588)4158811-3 s Halbleiterbauelement (DE-588)4113826-0 s Halbleiterphysik (DE-588)4113829-6 s 1\p DE-604 Physikalische Eigenschaft (DE-588)4134738-9 s 2\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Sze, Simon M. Physics of semiconductor devices Halfgeleiders gtt Natuurkunde gtt Semiconducteurs Semicondutores Elementares larpcal Physik Semiconductors Halbleiterschaltung (DE-588)4158811-3 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd |
subject_GND | (DE-588)4158811-3 (DE-588)4113826-0 (DE-588)4113829-6 (DE-588)4134738-9 |
title | Physics of semiconductor devices |
title_auth | Physics of semiconductor devices |
title_exact_search | Physics of semiconductor devices |
title_full | Physics of semiconductor devices S. M. Sze |
title_fullStr | Physics of semiconductor devices S. M. Sze |
title_full_unstemmed | Physics of semiconductor devices S. M. Sze |
title_short | Physics of semiconductor devices |
title_sort | physics of semiconductor devices |
topic | Halfgeleiders gtt Natuurkunde gtt Semiconducteurs Semicondutores Elementares larpcal Physik Semiconductors Halbleiterschaltung (DE-588)4158811-3 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd |
topic_facet | Halfgeleiders Natuurkunde Semiconducteurs Semicondutores Elementares Physik Semiconductors Halbleiterschaltung Halbleiterbauelement Halbleiterphysik Physikalische Eigenschaft |
work_keys_str_mv | AT szesimonm physicsofsemiconductordevices |