Elementary electronic structure:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Singapore [u.a.]
World Scientific
2004
|
| Edition: | Rev. ed. |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Originalausg. 1980 u.d.T.: Harrison, Walter A.: Electronic structure and the properties of solids. |
| Physical Description: | XX, 838 S. graph. Darst. |
| ISBN: | 9812387080 9812387072 |
Staff View
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| 250 | |a Rev. ed. | ||
| 264 | 1 | |a Singapore [u.a.] |b World Scientific |c 2004 | |
| 300 | |a XX, 838 S. |b graph. Darst. | ||
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Record in the Search Index
| _version_ | 1812535799251468288 |
|---|---|
| adam_text |
Xl
Contents
1 The Basic
1. Quantum
A. Waves and Observables
B.
2.
A. Molecular
B.
C.
D. The Total Energy
3.
A. Energy Bands
B. Matching to Free-Electron Bands
C. Cohesion
4.
A. Needed Parameters
B. The Nitrogen Molecule
С
D. Semiconductors
E. Overall Organization of Solid-State Systems
5.
A. Independent Ions
B. Couplings and Perturbation Theory
xii
6.
39
A. Empty-Core Pseudopotentials
39
B. Effective Interaction Between Ions
41
C. Partly-Filled Bands
43
7.
43
A. Coupling of d-States
44
B. The Coulomb Ud
45
C. The Energy Bands and the
45
D. Correlated States in f-Shell Metals
46
E. Transition-Metal and f-Shell-Metal Compounds
47
8.
49
A. Surface Energies
49
B. Other Systems
51
2
53
1.
53
2.
57
A. sp3-Hybrids
57
B. The Covalent Energy, V2
59
C. The Polar Energy, V3
61
D. The Metallic Energy, V]
63
E. The Overlap Repulsion.,
65
F.
69
3.
70
A. The Bond Orbital Approximation and Matrices
70
B. Metallization
75
C.
78
D. Polar Systems
81
E. Coulomb Corrections
82
4.
84
A. Trends in Bond Lengths
85
B. The Radial Force Constant
86
С
89
5.
93
A. The Second Moment
94
B. The Dependence Upon Structure
99
С
101
D. The Fourth Moment
102
E. Angular Rigidity
103
3
107
1.
108
2.
109
A. Twist Distortion
111
B. Graphitic Distortion and Internal Displacements
113
C. Interatomic Metallization and Effects of Polarity
118
3.
121
A. Acoustic Modes
124
B. Optical Modes
126
C. Effects of Polarity
128
Contents
4. Interatomic-Interaction Models 130
A.
В'.
С
D. Application to Tetrahedral Semiconductors
4
1.
2.
A. The Linear Response
B. The Effect of Metallization
С
D. Magnetic Susceptibility
3.
A. The Transverse Charge
B. Optical Mode Splitting
С
D. The Piezoelectric Effect
E. Elastooptic Effect
F. Electrooptic Effect
G. Dielectric Response in the Infrared
5
1.
2.
A. Bands from the coupling V)
B. Bands for polar crystals
С
3.
A. sp3-bands
B. A
С
D. Obtaining Universal Parameters
E. Application to Polar Systems
F. The Band States
G. Spin-Oribit Coupling
4.
5.
A. Coulomb Enhancement of the Gaps
B. Polarons
C.
6
1.
2
A. Vertical Transitions
B. The Optical Matrix Elements
С
D. Indirect Gaps
E. The Optical Absorption Peaks
xiv Contents
3.
A. Conduction-Band
B.
C.
D.
4.
A. The Dynamical Equations
B. Limitations of the Theory
C. The Dynamics of Holes
5.
A. Heavy- and Light-Hole Bands
B. Negative Gaps
С
D. Density of States
6.
A. The Matrix elements
B. The Rate
7
1.
A. Nonorthogonality and Electrostatic Contributions
B. Predicted Deformation Potentials
C. Experimental Values
2.
A. The Effects of Nonorthogonality
B. Indirect Gap Conduction Bands
С
D. Shifts of the Spin-Orbit Split Bands
3.
A. Interactions for Simple Systems
B. Acoustic Modes and Conduction Electrons
С
D. Interaction with Optical Modes
E. Holes and Local Lattice Rotations
F. Acoustic Modes and Holes
a. Light Holes and Longitudinal Modes
b. Light Holes and Shear Modes
с
G. Electrostatic Potentials and Screening
H. Electron Scattering by Acoustic Modes
8
1.
A. Enthalpies of Solution
B. Lattice Distortions
С
D. Alloy Energy Bands and Scattering
2.
3.
A. The Meal Vacancy
B. Jahn-Teller Distortion
C. The Tetrahedral and Shared-Site Interstitials
D. The Role in Diffusion
Contents xv
9 Bonding In
1.
A. Coulomb Effects and Closed-Shell Ions
B. Crystal Structures and Electrostatic Energy
С
D. The Cohesive Energy
E. The Born Electrostatic Model
F. Coulomb Enhancements of the Gap.
2.
A. Covalent Corrections to the Energy
B. The Energy Bands
С
D. Volume-Dependent Properties in Second Order
10
1.
A. Based upon Local-Density Theory
B. Fitting the Power-Law Form
С
2.
3.
A. Equilibrium Spacing
B. Cohesive Energy
С
D.
4.
A. The Shear Constant,
B. The Shear Constant, C44
С
5.
A. Volume-Dependent Properties
B. Elastic Constants
11
1.
A. The Alkali Haiides
B. Noble-Metal Halides
C. Divalent Compounds
D. Ten-Electron Compounds
E. The Implication of the Errors
F. Local-Field Effects
G. Application to Other Ionic Solids
2.
A. The Static Effective Charge
B. The Transverse Charge
C. The Static Dielectric Constant
xvi Contents
12 Covalent
1.
2.
3.
A. Metallization
B. Inter-atomic Metallization
4.
5.
6.
7.
8.
9.
10.
11.
12.
A. GeO2
B. Oxyanions,
C. Thallium Arsenic
D.
E. A Complex Semiconductor,
13
1.
2.
3.
A. Cohesive Energy
B. The Bulk Modulus
4.
A. Empty-Core Pseudopotentials
B. Madelung and Total Free-Electron Energy
C. Equilibrium Spacing and Bulk Modulus
D. Higher-Order Terms
5.
6.
A. Fermi-Thomas Theory
B. Screened Form Factors
C. The Real-Space Pseudopotential, w(r)
D. More Accurate Screening
7.
A. Motion in a Uniform Magnetic Field
B. Construction of Fermi Surfaces
С
D. Magnetic Breakdown
8.
9.
A. The Structure Factor
B. Electron Scattering
Contents xvii
14 Simple Metals, Bonding
1.
A. Vìbrational
B.
2.
A. The Effective Interaction
B. The Total Energy
С
3.
A. The Bulk Modulus
B. Deviations from the Cauchy Relations
С
D. The
4.
5.
A. Liquid Structure Factors
B. Resistivity
6.
A. Coupling Through the
B. Polar Systems
7.
A. Heats of Solution
a. Homovalent solutions.
b. Heterovalent solutions.
B. Alloy Formation Energies
15
1.
A. Pseudopotentials and OPW's
B. Atomic d-States
С
D. Contribution to the Pseudopotential
2.
A. The dd-Coupling
B. The Slater-Koster Tables
C. Energy Bands
D. Fermi Surfaces and Density of States
3.
A. The Atomic Surface Method
B. Values for
C.
4.
A. Band Width from the Second Moment
B. Coulomb Shifts and Values for
C.
D. The Total Energy
E. The Cohesive Energy
F. Volume-Dependent Properties
G. Crystal Structure Determination
H. Transition-Metal Alloys
xviii Contents
5.
582
A. The Effective Interaction
582
B. Elastic Constants
584
C. Multibody Forces
584
6.
586
A. The Exchange Energy
587
B. The Ferromagnetic State
588
16
593
1.
593
A. An Exact Solution
594
B. The Unrestricted Hartree-Fock Approximation
595
C. Self-Interactions
597
D. Generalization to d- and f-Bands
598
a. Local Moments in the
598
b. Generalizing the Exact Result
599
2.
601
A. ff-Coupling
602
B. General Formulae
606
C. Coulomb
607
D.
608
E.
610
3.
612
A. The f-Electrons
612
B. The Cohesive Energy
614
C. The Volume-Dependent Energy
616
D. Interatomic Interactions
617
E. Crystal Structure
618
4.
618
A. The Cohesive Energy
618
B. Volume-Dependent Properties
619
C. Interatomic Forces
624
D. Crystal Structures
624
5.
627
A. From the Band Limit
628
B. From the Atomic Limit
631
C. The Kondo Effect
634
6.
636
A. Tuning the Parameters
636
B. Alloys
638
С
640
17
641
1.
642
2.
647
A. The Octet Compounds
647
B. Other Oxides and Nitrides
648
Contents
3. Quantitative
650
A. The Essential Electronic Structure
650
B. Bands for the Compounds
652
С
656
D. The d-State Energy, Ed
659
E. The pd-Bonding Energy and Cohesion
661
F. The Volume-Dependent Properties
664
4.
668
A. Correlation Energy
668
B. The Metal-Insulator Transition
670
5.
672
18
679
1.
679
A. Rare-Earth Compounds
680
B. Actinide Compounds
682
2.
688
A. TiO2,
688
В.
688
3.
692
A. The Perovskite Structure
693
B. The Electronic Structure
695
C. Bonding Properties
699
D, Madelung Energies
701
E. The Electron-Phonon Interaction
703
4.
704
A. The Electronic Structure
705
B. Peierls Instabilities and the Antiferromagnetic State
708
C. Phonons, Paramagnons, and
711
19
714
1.
714
A. Elemental Semiconductors
715
B. Ionic Crystals and Polar Semiconductors.
716
С
716
D. Interaction Between Surfaces and Giant
2.
111
A. Corrections to the Tight-Binding Photothreshold
727
B. Photothresholds in Semiconductors.
728
C. Work Functions in Metals
729
3.
731
A. The Silicon
732
B. The Silicon
733
C. Polar Surfaces
734
D. The Silicon (111)
737
4.
738
A. Matching Wavefunctions at Heterojunctions
739
B. Semiconductor Band Line-Ups
741
С
743
D. Strain-Layer Superiattices
745
E. Metal-Semiconductor Interfaces
747
F. Adsorbed Atoms on Semiconductors
749
5.
750
xx Contents
20
1. Non-Tetrahedral Covalent
A. Two Nearest Neighbors,
B. Multicenter
C.
D.
2.
A. Electronic Structure of Inert-Gas Solids
B.
C.
D.
E. Lennard-Jones Interaction
F. Molecular Solids
3.
A. Graphite
a. Energy Bands
b. The
B. Fullerenes
C.
4.
A. H2
B. Central Hydrides
C. Hydrocarbons
D. Shared-Hydrogen Bonding
21
1.
2.
A. Specific Heat Linear in
B.
3.
A. After Applied Field
B.
C. After Field Removal
4.
A. Effects of DC-Fields
B. Memory Effects
5.
6.
Author Index
Subject Index |
| any_adam_object | 1 |
| author | Harrison, Walter A. |
| author_facet | Harrison, Walter A. |
| author_role | aut |
| author_sort | Harrison, Walter A. |
| author_variant | w a h wa wah |
| building | Verbundindex |
| bvnumber | BV019379208 |
| classification_rvk | UP 3600 |
| classification_tum | PHY 660f |
| ctrlnum | (OCoLC)492854980 (DE-599)BVBBV019379208 |
| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381 5 |
| dewey-search | 621.381 5 |
| dewey-sort | 3621.381 15 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | Rev. ed. |
| format | Book |
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| id | DE-604.BV019379208 |
| illustrated | Illustrated |
| indexdate | 2024-10-10T14:00:39Z |
| institution | BVB |
| isbn | 9812387080 9812387072 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-012842341 |
| oclc_num | 492854980 |
| open_access_boolean | |
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| owner_facet | DE-19 DE-BY-UBM DE-384 DE-355 DE-BY-UBR DE-11 DE-91G DE-BY-TUM |
| physical | XX, 838 S. graph. Darst. |
| publishDate | 2004 |
| publishDateSearch | 2004 |
| publishDateSort | 2004 |
| publisher | World Scientific |
| record_format | marc |
| spelling | Harrison, Walter A. Verfasser aut Elementary electronic structure Walter A. Harrison Rev. ed. Singapore [u.a.] World Scientific 2004 XX, 838 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Originalausg. 1980 u.d.T.: Harrison, Walter A.: Electronic structure and the properties of solids. Circuits électroniques ram Semiconducteurs ram Chemische Bindung (DE-588)4009843-6 gnd rswk-swf Berechnung (DE-588)4120997-7 gnd rswk-swf Festkörper (DE-588)4016918-2 gnd rswk-swf Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf Elektronenstruktur (DE-588)4129531-6 gnd rswk-swf Festkörper (DE-588)4016918-2 s Chemische Bindung (DE-588)4009843-6 s DE-604 Physikalische Eigenschaft (DE-588)4134738-9 s Berechnung (DE-588)4120997-7 s Elektronenstruktur (DE-588)4129531-6 s 1\p DE-604 Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=012842341&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Harrison, Walter A. Elementary electronic structure Circuits électroniques ram Semiconducteurs ram Chemische Bindung (DE-588)4009843-6 gnd Berechnung (DE-588)4120997-7 gnd Festkörper (DE-588)4016918-2 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Elektronenstruktur (DE-588)4129531-6 gnd |
| subject_GND | (DE-588)4009843-6 (DE-588)4120997-7 (DE-588)4016918-2 (DE-588)4134738-9 (DE-588)4129531-6 |
| title | Elementary electronic structure |
| title_auth | Elementary electronic structure |
| title_exact_search | Elementary electronic structure |
| title_full | Elementary electronic structure Walter A. Harrison |
| title_fullStr | Elementary electronic structure Walter A. Harrison |
| title_full_unstemmed | Elementary electronic structure Walter A. Harrison |
| title_short | Elementary electronic structure |
| title_sort | elementary electronic structure |
| topic | Circuits électroniques ram Semiconducteurs ram Chemische Bindung (DE-588)4009843-6 gnd Berechnung (DE-588)4120997-7 gnd Festkörper (DE-588)4016918-2 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Elektronenstruktur (DE-588)4129531-6 gnd |
| topic_facet | Circuits électroniques Semiconducteurs Chemische Bindung Berechnung Festkörper Physikalische Eigenschaft Elektronenstruktur |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=012842341&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT harrisonwaltera elementaryelectronicstructure |