Light emitting silicon for microphotonics:
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Book |
| Language: | German |
| Published: |
Berlin [u.a.]
Springer
2003
|
| Series: | Springer tracts in modern physics
194 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XII, 282 S.: graph. Darst. |
| ISBN: | 3540402330 |
Staff View
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Record in the Search Index
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| adam_text |
CONTENTS
1 INTRODUCTION: FUNDAMENTAL ASPECTS
.
1
1.1 ELECTRONIC AND OPTICAL PROPERTIES OF BULK SILICON . . . . . . . . .
. . 1
1.1.1 LIGHTEMITTINGDIODEEFFICIENCY. 6
1.2 ELECTROLUMINESCENCE IN BULK CRYSTALLINE SI. 9
1.2.1 BULK-SIPNJUNCTIONLED . 9
1.2.2 ENHANCED-EFFICIENCY BULK-SI PN JUNCTION LED . . . . . . . 11
1.2.3 BAND-TO-BANDELINMOSLED. 13
1.3 ENGINEERING LUMINESCENT SILICON STRUCTURES . . . . . . . . . . . . .
. . . 14
1.3.1 INTRINSICANDEXTRINSICLUMINESCENCE. 14
1.3.2 ALLOY-INDUCEDLUMINESCENCE. 16
1.3.3 ZONEFOLDING:SI-GESUPERLATTICES. 19
1.3.4 SILICON*GERMANIUM QUANTUM CASCADE EMITTERS . . . . . . 21
1.3.5 QUANTUM CONFINEMENT:
POROUS SILICON AND SILICON NANOSTRUCTURES . . . . . . . . . . . 24
1.3.6 SEMICONDUCTING SILICIDES . . . . . . . . . . . . . . . . . . . . .
. . . . . 27
1.3.7 HYBRIDAPPROACHES. 30
REFERENCES . 31
2 ELECTRON STATES AND OPTICAL PROPERTIES
IN CONFINED SILICON STRUCTURES
.
37
2.1 CALCULATIONAL METHODS OF ELECTRONIC
ANDOPTICALPROPERTIES:ANOVERVIEW. 38
2.2 SILICON QUANTUM WELLS . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 46
2.2.1 ELECTRONICPROPERTIES . 47
2.2.2 OPTICALPROPERTIES. 53
2.3 SILICON QUANTUM WIRES . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 58
2.3.1 ELECTRONICPROPERTIES . 58
2.3.2 OPTICALPROPERTIES. 61
2.4 SILICON QUANTUM DOTS . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 63
2.4.1 ELECTRONICPROPERTIES . 63
2.4.2 OPTICALPROPERTIES. 66
REFERENCES . 70
XC
O
N
T
E
N
T
S
3 POROUS SILICON
.
75
3.1 HOW POROUS SILICON IS MADE . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 76
3.1.1 CURRENT*VOLTAGECHARACTERISTICS. 76
3.1.2 DISSOLUTIONCHEMISTRIES . 77
3.1.3 POREFORMATION . 78
3.1.4 PARAMETERS WHICH AFFECT THE PS FORMATION . . . . . . . . . . 79
3.1.5 EFFECTOFANODIZATIONCONDITIONS . 81
3.1.6 MORPHOLOGYOFTHERESULTINGLAYERS . 83
3.1.7 MACROPOROUS SILICON FORMATION . . . . . . . . . . . . . . . . . .
. . 84
3.1.8 DRYINGOFTHESAMPLES . 85
3.1.9 ANODICALOXIDATION. 86
3.1.10 POROSITYMULTILAYERS . 86
3.2 WHATARETHECONSTITUENTSOFPS? . 87
3.2.1 MICROSTRUCTUREOFPS. 87
3.2.2 CHEMICALCOMPOSITION . 89
3.3 ELECTRONICANDOPTICALPROPERTIESOFPS . 91
3.3.1 WHAT IS THE NATURE
OF THE PS FUNDAMENTAL BAND GAP? . . . . . . . . . . . . . . . . . 91
3.3.2 DIELECTRICFUNCTIONANDREFRACTIVEINDEX . 94
3.4 PHOTOLUMINESCENCEOFPS. 96
3.4.1 VISIBLEBAND. 97
3.4.2 OTHEREMISSIONBANDS . 102
3.4.3 LUMINESCENCEDECAY. 102
3.4.4 MODELSFORPSLUMINESCENCE. 104
3.5 ELECTRICALPROPERTIES . 110
3.5.1 PSDIODE. 110
3.5.2 CONDUCTION IN PS . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 112
3.6 LIGHTEMITTINGDIODES . 113
3.6.1 ELECTROLUMINESCENT DEVICES BASED
ONSIMPLESOLIDCONTACT. 114
3.6.2 HOMOJUNCTIONDEVICES . 116
3.6.3 HETEROJUNCTIONDEVICES. 116
3.7 CONCLUSIONS. 117
REFERENCES . 117
4 SILICON NANOSTRUCTURES: WELLS, WIRES, AND DOTS
.
123
4.1 SILICON*INSULATOR TWO-DIMENSIONAL SYSTEMS . . . . . . . . . . . . .
. . . 123
4.1.1 SI-CAF
2
. 125
4.1.2 SI-SIO
2
. 131
4.2 SILICON NANOPILLARS AND WIRES . . . . . . . . . . . . . . . . . . .
. . . . . . . . . 142
4.2.1 FABRICATIONTECHNIQUESANDSTRUCTURE. 142
4.2.2 ELECTRONIC AND OPTICAL PROPERTIES, PHOTO
ANDELECTROLUMINESCENCE . 148
4.3 SILICON NANOCRYSTALS . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . 151
4.3.1 FABRICATIONTECHNIQUES. 151
CONTENTS XI
4.3.2 STRUCTURALPROPERTIES . 153
4.3.3 PHOTOLUMINESCENCE . 156
4.3.4 TEMPERATUREDEPENDENCE. 162
4.3.5 OPTICALGAIN. 165
4.3.6 ELECTROLUMINESCENCE . 169
REFERENCES . 172
5 LIGHT EMISSION OF ER
3+
IN SILICON
.
179
5.1 THEINCORPORATIONOFERINSI . 181
5.2 ELECTRICALPROPERTIESOFERINSI . 185
5.3 PHOTOLUMINESCENCE . 187
5.3.1 EXCITATIONMECHANISMS. 188
5.3.2 AUGERPROCESSES. 193
5.3.3 NONRADIATIVEDE-EXCITATIONPROCESSES. 195
5.3.4 QUANTUMEFFICIENCY. 201
5.4 ELECTROLUMINESCENCE . 203
5.5 ERBIUMDOPEDSINANOCRYSTALS. 213
REFERENCES . 223
6 SILICON-BASED PHOTONIC CRYSTALS
*
.
227
6.1 ENGINEERINGPHOTONICSTATES:BASICS . 228
6.2 ONE-DIMENSIONALPHOTONICCRYSTALS. 230
6.2.1 OPTICALMICROCAVITIES . 235
6.2.2 COUPLINGPHENOMENA . 238
6.2.3 OMNIDIRECTIONALREFLECTOR . 241
6.2.4 EFFECTS OF FINITE SIZE OF PC ON OPTICAL PROPERTIES . . . . 242
6.3 TWO-DIMENSIONALPHOTONICCRYSTALS . 242
6.3.1 WHY MORE THAN ONE-DIMENSIONAL CONFINEMENT? . . . . . 242
6.3.2 BASICS . 243
6.3.3 MACROPOROUS SILICON . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 245
6.3.4 OPTICALCHARACTERIZATION . 248
6.3.5 WAVEGUIDES. 249
6.3.6 MICROCAVITIES . 251
6.3.7 COUPLEDDEFECTS. 253
6.4 THREE-DIMENSIONALPHOTONICCRYSTALS . 254
REFERENCES . 257
7 CONCLUSIONS AND FUTURE OUTLOOK
.
263
7.1 SILICON PHOTONICS . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . 264
7.1.1 SILICON PHOTONIC COMPONENTS . . . . . . . . . . . . . . . . . . .
. . . 264
7.1.2 SILICON PHOTONIC INTEGRATED CIRCUITS . . . . . . . . . . . . . . .
. 266
7.2 TOWARDS THE FIRST SILICON LASER . . . . . . . . . . . . . . . . . .
. . . . . . . . . 268
7.2.1 BULK SILICON . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 269
XII CONTENTS
7.2.2 SILICON NANOCRYSTALS . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 270
7.2.3 ER COUPLED SILICON NANOCRYSTALS . . . . . . . . . . . . . . . . .
. . 271
7.2.4 SI/GEQUANTUMCASCADESTRUCTURES. 272
7.3 CONCLUSION . 273
REFERENCES . 274
INDEX
.
277 |
| any_adam_object | 1 |
| author | Ossicini, Stefano 1952- Pavesi, Lorenzo Priolo, Francesco |
| author_GND | (DE-588)129519669 |
| author_facet | Ossicini, Stefano 1952- Pavesi, Lorenzo Priolo, Francesco |
| author_role | aut aut aut |
| author_sort | Ossicini, Stefano 1952- |
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| bvnumber | BV017430940 |
| classification_rvk | UD 9310 UP 3050 |
| classification_tum | ELT 330f |
| ctrlnum | (OCoLC)883573668 (DE-599)BVBBV017430940 |
| discipline | Physik Elektrotechnik |
| format | Book |
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| id | DE-604.BV017430940 |
| illustrated | Not Illustrated |
| indexdate | 2024-08-01T00:27:53Z |
| institution | BVB |
| isbn | 3540402330 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-010502745 |
| oclc_num | 883573668 |
| open_access_boolean | |
| owner | DE-29T DE-91G DE-BY-TUM DE-19 DE-BY-UBM DE-703 DE-634 DE-11 DE-188 |
| owner_facet | DE-29T DE-91G DE-BY-TUM DE-19 DE-BY-UBM DE-703 DE-634 DE-11 DE-188 |
| physical | XII, 282 S.: graph. Darst. |
| publishDate | 2003 |
| publishDateSearch | 2003 |
| publishDateSort | 2003 |
| publisher | Springer |
| record_format | marc |
| series | Springer tracts in modern physics |
| series2 | Springer tracts in modern physics |
| spelling | Ossicini, Stefano 1952- Verfasser (DE-588)129519669 aut Light emitting silicon for microphotonics S. Ossicini ; L. Pavesi ; F. Priolo Berlin [u.a.] Springer 2003 XII, 282 S.: graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer tracts in modern physics 194 Silicium (DE-588)4077445-4 gnd rswk-swf Lichtemission (DE-588)4218979-2 gnd rswk-swf Nanostrukturiertes Material (DE-588)4342626-8 gnd rswk-swf Siliciumbauelement (DE-588)4181368-6 gnd rswk-swf Photonik (DE-588)4243979-6 gnd rswk-swf Optoelektronik (DE-588)4043687-1 gnd rswk-swf Optoelektronik (DE-588)4043687-1 s Silicium (DE-588)4077445-4 s Nanostrukturiertes Material (DE-588)4342626-8 s DE-604 Lichtemission (DE-588)4218979-2 s Photonik (DE-588)4243979-6 s Siliciumbauelement (DE-588)4181368-6 s Pavesi, Lorenzo Verfasser aut Priolo, Francesco Verfasser aut Springer tracts in modern physics 194 (DE-604)BV000000153 194 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010502745&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Ossicini, Stefano 1952- Pavesi, Lorenzo Priolo, Francesco Light emitting silicon for microphotonics Springer tracts in modern physics Silicium (DE-588)4077445-4 gnd Lichtemission (DE-588)4218979-2 gnd Nanostrukturiertes Material (DE-588)4342626-8 gnd Siliciumbauelement (DE-588)4181368-6 gnd Photonik (DE-588)4243979-6 gnd Optoelektronik (DE-588)4043687-1 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4218979-2 (DE-588)4342626-8 (DE-588)4181368-6 (DE-588)4243979-6 (DE-588)4043687-1 |
| title | Light emitting silicon for microphotonics |
| title_auth | Light emitting silicon for microphotonics |
| title_exact_search | Light emitting silicon for microphotonics |
| title_full | Light emitting silicon for microphotonics S. Ossicini ; L. Pavesi ; F. Priolo |
| title_fullStr | Light emitting silicon for microphotonics S. Ossicini ; L. Pavesi ; F. Priolo |
| title_full_unstemmed | Light emitting silicon for microphotonics S. Ossicini ; L. Pavesi ; F. Priolo |
| title_short | Light emitting silicon for microphotonics |
| title_sort | light emitting silicon for microphotonics |
| topic | Silicium (DE-588)4077445-4 gnd Lichtemission (DE-588)4218979-2 gnd Nanostrukturiertes Material (DE-588)4342626-8 gnd Siliciumbauelement (DE-588)4181368-6 gnd Photonik (DE-588)4243979-6 gnd Optoelektronik (DE-588)4043687-1 gnd |
| topic_facet | Silicium Lichtemission Nanostrukturiertes Material Siliciumbauelement Photonik Optoelektronik |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=010502745&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000000153 |
| work_keys_str_mv | AT ossicinistefano lightemittingsiliconformicrophotonics AT pavesilorenzo lightemittingsiliconformicrophotonics AT priolofrancesco lightemittingsiliconformicrophotonics |