Transient temperature phenomena during sublimation growth of silicon carbide single crystals:
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Berlin
WIAS
2002
|
Schriftenreihe: | Preprint / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V.
755 |
Beschreibung: | Literaturverz. S. 11 - 14 |
Beschreibung: | 14 S. graph. Darst. : 30 cm |
Internformat
MARC
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100 | 1 | |a Klein, Olaf |d 1966- |e Verfasser |0 (DE-588)118002082 |4 aut | |
245 | 1 | 0 | |a Transient temperature phenomena during sublimation growth of silicon carbide single crystals |c Olaf Klein ; Peter Philip. Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
264 | 1 | |a Berlin |b WIAS |c 2002 | |
300 | |a 14 S. |b graph. Darst. : 30 cm | ||
336 | |b txt |2 rdacontent | ||
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490 | 1 | |a Preprint / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |v 755 | |
500 | |a Literaturverz. S. 11 - 14 | ||
700 | 1 | |a Philip, Peter |d 1971- |e Verfasser |0 (DE-588)124765084 |4 aut | |
810 | 2 | |a Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |t Preprint |v 755 |w (DE-604)BV009885922 |9 755 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-010178517 |
Datensatz im Suchindex
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any_adam_object | |
author | Klein, Olaf 1966- Philip, Peter 1971- |
author_GND | (DE-588)118002082 (DE-588)124765084 |
author_facet | Klein, Olaf 1966- Philip, Peter 1971- |
author_role | aut aut |
author_sort | Klein, Olaf 1966- |
author_variant | o k ok p p pp |
building | Verbundindex |
bvnumber | BV016463902 |
classification_rvk | SI 304 |
ctrlnum | (OCoLC)51699315 (DE-599)BVBBV016463902 |
discipline | Mathematik |
format | Book |
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id | DE-604.BV016463902 |
illustrated | Illustrated |
indexdate | 2024-07-09T19:10:47Z |
institution | BVB |
language | English |
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oclc_num | 51699315 |
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owner_facet | DE-355 DE-BY-UBR |
physical | 14 S. graph. Darst. : 30 cm |
publishDate | 2002 |
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publisher | WIAS |
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series2 | Preprint / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
spelling | Klein, Olaf 1966- Verfasser (DE-588)118002082 aut Transient temperature phenomena during sublimation growth of silicon carbide single crystals Olaf Klein ; Peter Philip. Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. Berlin WIAS 2002 14 S. graph. Darst. : 30 cm txt rdacontent n rdamedia nc rdacarrier Preprint / Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. 755 Literaturverz. S. 11 - 14 Philip, Peter 1971- Verfasser (DE-588)124765084 aut Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. Preprint 755 (DE-604)BV009885922 755 |
spellingShingle | Klein, Olaf 1966- Philip, Peter 1971- Transient temperature phenomena during sublimation growth of silicon carbide single crystals |
title | Transient temperature phenomena during sublimation growth of silicon carbide single crystals |
title_auth | Transient temperature phenomena during sublimation growth of silicon carbide single crystals |
title_exact_search | Transient temperature phenomena during sublimation growth of silicon carbide single crystals |
title_full | Transient temperature phenomena during sublimation growth of silicon carbide single crystals Olaf Klein ; Peter Philip. Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
title_fullStr | Transient temperature phenomena during sublimation growth of silicon carbide single crystals Olaf Klein ; Peter Philip. Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
title_full_unstemmed | Transient temperature phenomena during sublimation growth of silicon carbide single crystals Olaf Klein ; Peter Philip. Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
title_short | Transient temperature phenomena during sublimation growth of silicon carbide single crystals |
title_sort | transient temperature phenomena during sublimation growth of silicon carbide single crystals |
volume_link | (DE-604)BV009885922 |
work_keys_str_mv | AT kleinolaf transienttemperaturephenomenaduringsublimationgrowthofsiliconcarbidesinglecrystals AT philippeter transienttemperaturephenomenaduringsublimationgrowthofsiliconcarbidesinglecrystals |