Supercritical Si 1-x Ge x alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition:
Saved in:
| Main Author: | |
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| Format: | Book |
| Language: | English |
| Published: |
2001
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| Subjects: | |
| Item Description: | Aachen, Techn. Hochsch., Diss., 2001. - Auch als: Berichte des Forschungszentrums Jülich ; 3890 |
| Physical Description: | II, 147 S. Ill., graph. Darst. |
Staff View
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Record in the Search Index
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| author | Grimm, Karsten |
| author_facet | Grimm, Karsten |
| author_role | aut |
| author_sort | Grimm, Karsten |
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| building | Verbundindex |
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| id | DE-604.BV014658922 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T19:04:48Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009950586 |
| oclc_num | 635068482 |
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| owner_facet | DE-91 DE-BY-TUM |
| physical | II, 147 S. Ill., graph. Darst. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
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| spelling | Grimm, Karsten Verfasser aut Supercritical Si 1-x Ge x alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition vorgelegt von Karsten Grimm 2001 II, 147 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Aachen, Techn. Hochsch., Diss., 2001. - Auch als: Berichte des Forschungszentrums Jülich ; 3890 Germanium (DE-588)4135644-5 gnd rswk-swf APCVD-Verfahren (DE-588)4528793-4 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Germanium (DE-588)4135644-5 s Mischkristall (DE-588)4170112-4 s Dünne Schicht (DE-588)4136925-7 s APCVD-Verfahren (DE-588)4528793-4 s DE-604 |
| spellingShingle | Grimm, Karsten Supercritical Si 1-x Ge x alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition Germanium (DE-588)4135644-5 gnd APCVD-Verfahren (DE-588)4528793-4 gnd Silicium (DE-588)4077445-4 gnd Dünne Schicht (DE-588)4136925-7 gnd Mischkristall (DE-588)4170112-4 gnd |
| subject_GND | (DE-588)4135644-5 (DE-588)4528793-4 (DE-588)4077445-4 (DE-588)4136925-7 (DE-588)4170112-4 (DE-588)4113937-9 |
| title | Supercritical Si 1-x Ge x alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition |
| title_auth | Supercritical Si 1-x Ge x alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition |
| title_exact_search | Supercritical Si 1-x Ge x alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition |
| title_full | Supercritical Si 1-x Ge x alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition vorgelegt von Karsten Grimm |
| title_fullStr | Supercritical Si 1-x Ge x alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition vorgelegt von Karsten Grimm |
| title_full_unstemmed | Supercritical Si 1-x Ge x alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition vorgelegt von Karsten Grimm |
| title_short | Supercritical Si 1-x Ge x alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition |
| title_sort | supercritical si 1 x ge x alloy layers for optoelectronic applications grown by atmospheric pressure chemical vapor deposition |
| topic | Germanium (DE-588)4135644-5 gnd APCVD-Verfahren (DE-588)4528793-4 gnd Silicium (DE-588)4077445-4 gnd Dünne Schicht (DE-588)4136925-7 gnd Mischkristall (DE-588)4170112-4 gnd |
| topic_facet | Germanium APCVD-Verfahren Silicium Dünne Schicht Mischkristall Hochschulschrift |
| work_keys_str_mv | AT grimmkarsten supercriticalsi1xgexalloylayersforoptoelectronicapplicationsgrownbyatmosphericpressurechemicalvapordeposition |