Radiation effects in advanced semiconductor materials and devices:
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Berlin [u.a.]
Springer
2002
|
| Series: | Springer series in materials science
57 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XXII, 401 S. graph. Darst. |
| ISBN: | 3540433937 |
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| adam_text | C. CLAEYS E. SIMOEN RADIATION EFFECTS IN ADVANCED SEMICONDUCTOR
MATERIALS AND DEVICES WITH 331 FIGURES SPRINGER TABLE OF CONTENT PREFACE
LIST OF ACRONYMS LIST OF SYMBOLS LIST OF GREEK SYMBOLS 1 RADIATION
ENVIRONMENTS AND COMPONENT SELECTION STRATEGY. 1 1.1 INTRODUCTION 1 1.2
RADIATION ENVIRONMENTS 1 1.2.1 SPACE ENVIRONMENTS 2 1.2.2 HIGH-ENERGY
PHYSICS EXPERIMENTS 3 1.2.3 NUCLEAR ENVIRONMENT 4 1.2.4 NATURAL
ENVIRONMENT 5 1.2.5 PROCESSING-INDUCED RADIATION 6 1.3 COMPONENT
SELECTION STRATEGY 6 1.4 CONCLUSION 8 2 BASIC RADIATION DAMAGE
MECHANISMS IN SEMICONDUCTOR MATERIALS AND DEVICES. 9 2.1 INTRODUCTION _
9 2.2 FUNDAMENTAL DAMAGE MECHANISMS 9 2.2.1 NOMENCLATURE 9 2.2.2
IONISATION DAMAGE 10 2.2.3 DISPLACEMENT DAMAGE 12 2.3 IMPACT OF
RADIATION DAMAGE ON DEVICE PERFORMANCE 20 2.3.1 IONISATION DAMAGE 20
2.3.2 DISPLACEMENT DAMAGE 28 2.4 SPECTROSCOPIC STUDY OF MICROSCOPIC
RADIATION DAMAGE 37 2.4.1 ELECTRON PARAMAGNETIC RESONANCE (EPR) _ 37
2.4.2 DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS) 43 2.4.3
PHOTOLUMINESCENCE SPECTROSCOPY (PL) 49 2.5 CONCLUSION 51 X TABLE OF
CONTENT 3 DISPLACEMENT DAMAGE IN GROUP IV SEMICONDUCTOR MATERIALS 53 3.1
INTRODUCTION 53 3.2 DISPLACEMENT DAMAGE IN SILICON 54 3.2.1 RADIATION
DEFECTS IN SILICON 54 3.2.2 IMPACT OF RADIATION DEFECTS ON SILICON
DEVICES 62 3.2.3 SUBSTRATE AND DEVICE HARDENING 66 3.2.4 SUMMARY SILICON
RADIATION DEFECTS _ 69 3.3 DISPLACEMENT DAMAGE IN GERMANIUM 70 3.3.1
POTENTIAL APPLICATIONS OF GE 70 3.3.2 CRYOGENIC IRRADIATION OF GE 71
3.3.3 ROOM TEMPERATURE IRRADIATION OF GE 74 3.3.4 IMPACT RADIATION
DAMAGE ON GE MATERIALS AND DEVICE PROPERTIES 76 3.3.5 SUMMARY GERMANIUM
RADIATION DEFECTS 77 3.4 DISPLACEMENT DAMAGE IN SIGE ALLOYS 78 3.4.1
SIGE MATERIAL PROPERTIES AND APPLICATIONS .78 3.4.2 RADIATION DAMAGE IN
SIGE 83 3.4.3 PROCESSING-INDUCED RADIATION DAMAGE IN SIGE 95 3.4.4
RADIATION DAMAGE IN SIGE DEVICES ...103 3.4.5 CONCLUSIONS RADIATION
DAMAGE IN SIGE ALLOYS 107 3.5 GENERAL CONCLUSIONS GROUP-IV
SEMICONDUCTORS 107 4 RADIATION DAMAGE IN GAAS ...109 4.1 INTRODUCTION _
109 4.2 BASIC NOTATIONS AND DEFINITIONS 110 4.3 NATIVE AND
RADIATION-INDUCED POINT DEFECTS IN GAAS ...HI 4.3.1 NATIVE POINT DEFECTS
IN GAAS ...112 4.3.2 BASIC RADIATION DEFECTS IN GAAS 114 4.3.3 NEUTRON
AND ION RADIATION-INDUCED DEFECTS IN GAAS 119 4.3.4 PROCESSING-INDUCED
RADIATION DEFECTS IN GAAS _ 122 4.3.5 SUMMARY RADIATION DEFECTS IN GAAS
126 4.4 DAMAGE FACTORS ANDNIEL 127 4.4.1 CARRIER REMOVAL AND MOBILITY
DEGRADATION IN GAAS 127 4.4.2 CORRELATION BETWEEN RESISTANCE DAMAGE
FACTOR AND NIEL 132 4.4.3 LIFETIME DAMAGE FACTOR AND NIEL 133 4.4.4
CORRELATION WITH MICROSCOPIC DAMAGE 135 4.4.5 SUMMARY DAMAGE FACTORS
ANDNIEL IN GAAS 138 4.5 IMPACT ON GAAS DEVICES 139 4.5.1 SCHOTTKY
BARRIERS AND RADIATION DETECTORS.. 139 4.5.2 GAAS SOLAR CELLS. 140 4.6
GENERAL CONCLUSIONS 143 TABLE OF CONTENT XI SPACE RADIATION ASPECTS OF
SILICON BIPOLAR TECHNOLOGIES 145 5.1 INTRODUCTION 145 5.2 DEVICE
STRUCTURES AND BASIC RADIATION EFFECTS 145 5.2.1 DEVICE STRUCTURES AND
DEFINITIONS 145 5.2.2 RADIATION DAMAGE MECHANISMS 147 5.3 DEGRADATION IN
VERTICAL (N-P-N) BJTS 148 5.3.1 PHENOMENOLOGY OF TOTAL DOSE DAMAGE ; 149
5.3.2 BASIC LOW DOSE-RATE DEGRADATION MECHANISMS 153 5.3.3 CHARGE
SEPARATION IN BJTS .157 5.3.4 HARDENING GUIDELINES FOR VERTICAL BJTS 163
5.3.5 HARDENING ASSURANCE AND TESTING ...164 5.3.6 BULK DAMAGE IN
VERTICAL TRANSISTORS 164 5.4 DEGRADATION IN LATERAL TRANSISTORS 167
5.4.1 PHENOMENOLOGY ...167 5.4.2 PHYSICAL MECHANISMS AND MODELING 170
5.5 DEGRADATION IN SIGE HBTS 172 5.5.1 DEGRADATION OF THE STATIC AND
LOW-FREQUENCY NOISE CHARACTERISTICS.. 172 5.5.2 DEGRADATION OF THE RF
CHARACTERISTICS 178 5.6 CONCLUSIONS 179 RADIATION DAMAGE IN SILICON MOS
DEVICES 18 1 6.1 INTRODUCTION 181 6.2 IMPACT OF SCALING ON THE RADIATION
RESPONSE 182 6.2.1 GATE LENGTH DEPENDENCE 183 6.2.2 LATERAL
NON-HOMOGENEOUS DAMAGING 185 6.2.3 GATE-INDUCED DRAIN LEAKAGE (GIDL) 190
6.3 PROCESSING INDUCED RADIATION DAMAGE EFFECTS 192 6.3.1 PLASMA DAMAGE
193 6.3.2 RAPID THERMAL ANNEALING (RTA) 193 6.3.3 GATE MATERIAL AND
CONTACTING 197 6.4 ALTERNATIVE GATE DIELECTRICS 199 6.4.1 DOPED OXIDES
199 6.4.2 NITRIDED (NO) AND REOXIDISED NITRIDED OXIDES (RNO) 200 6.4.3 N
2 O OR NITROUS OXIDES 214 6.5 ULTRA-THIN OXIDES _ 216 6.5.1
RADIATION-INDUCED LEAKAGE CURRENT (RILC) .216 6.5.2 RADIATION-INDUCED
SOFT BREAKDOWN (RSB) 223 6.5.3 SINGLE EVENT GATE RUPTURE 224 6.5.4
RELIABILITY OF IRRADIATED THIN OXIDES 225 6.5.5 SUMMARY 226 6.6 DEVICE
ISOLATION 226 6.6.1 LOCOS ISOLATION 227 6.6.2 SHALLOW TRENCH ISOLATION
229 6.7 SILICON-ON-INSULATOR CMOS TECHNOLOGY 232 XII TABLE OF CONTENT
6.7.1 SILICON-ON-SAPPHIRE (SOS) 234 6.7.2 SILICON-ON-INSULATOR (SOI)
TECHNOLOGIES .236 6.7.3 RADIATION HARDNESS OF SOI TECHNOLOGIES 239 6.8
CONCLUSIONS 243 7 GAAS BASED FIELD EFFECT TRANSISTORS FOR RADIATION-HARD
APPLICATIONS 245 7.1 INTRODUCTION 245 7.2 MATERIAL RELATED ISSUES AND
DEVICE STRUCTURES AND OPERATION 245 7.2.1 DEFECTS IN ALGAAS LAYERS
...246 7.2.2 MESFET STRUCTURE AND OPERATION 246 7.2.3 HEMT STRUCTURE AND
OPERATION .249 7.3 RADIATION DAMAGE AND HARDENING IN GAAS MESFETS 252
7.3.1 DEGRADATION OF THE BASIC FET PARAMETERS 252 7.3.2 LOW-FREQUENCY
NOISE AND DEFECT RELATED EFFECTS 259 7.3.3 CIRCUIT RELATED DEGRADATION
263 7.4 RADIATION DAMAGE AND HARDENING IN HEMTS 266 7.4.1 DEGRADATION OF
THE BASIC PARAMETERS 266 7.4.2 LOW-ENERGY ELECTRON EFFECTS ON 2-DEG
PROPERTIES 277 7.4.3 CIRCUIT DEGRADATION ASPECTS 278 7.5 CONCLUSIONS 280
8 OPTO-ELECTRONIC COMPONENTS FOR SPACE 281 8.1 INTRODUCTION 281 8.2
OPTO-ELECTRONIC COMPONENTS 281 8.2.1 LIGHT EMITTING DIODES (LEDS) AND
LASER DIODES (LDS) 281 8.2.2 PHOTODETECTORS 287 8.2.3 OPTOCOUPLERS 289
8.3 BASIC RADIATION EFFECTS AND MATERIAL ISSUES 290 8.3.1 IMPACT OF
IRRADIATION ON OPTICAL MATERIAL PROPERTIES... .290 8.3.2 RADIATION
DEFECTS AND MATERIAL ASPECTS IN TERNARY COMPOUNDS 302 8.3.3 DAMAGE
FACTORS AND NIEL 308 8.4 RADIATION EFFECTS IN OPTO-ELECTRONIC COMPONENTS
312 8.4.1 LIGHT EMITTING DIODES AND LASER DIODES 312 8.4.2
PHOTODETECTORS 320 8.4.3 OPTOCOUPLERS .327 8.5 CONCLUSIONS 330 9
ADVANCED SEMICONDUCTOR MATERIALS AND DEVICES - OUTLOOK 331 9.1
INTRODUCTION 331 9.2 NON-VOLATILE MEMORIES 331 9.2.1 FLASH MEMORIES 332
9.2.2 FERROELECTRIC MEMORIES (FERAMS) 335 9.2.3 CONCLUSIONS 336 TABLE OF
CONTENT XIII 9.3 UIGH-K GATE DIELECTRICS 336 9.4 RADIATION EFFECTS IN
SIC 339 9.4.1 SIC MATERIAL PROPERTIES AND ANALYSIS 340 9.4.2 INTRINSIC
AND RADIATION DEFECTS IN SIC 341 9.4.3 MACROSCOPIC DAMAGE IN SIC
DEVICES....; 346 9.4.4 IONISATION DAMAGE IN SIC MOSFETS AND MESFETS 347
9.4.5 SUMMARY 348 9.5 CONCLUSION AND OUTLOOK 350 REFERENCES 351
|
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| indexdate | 2024-07-09T19:03:57Z |
| institution | BVB |
| isbn | 3540433937 |
| language | English |
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| spelling | Claeys, Cor Verfasser aut Radiation effects in advanced semiconductor materials and devices C. Claeys ; E. Simoen Berlin [u.a.] Springer 2002 XXII, 401 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 57 Physics and astronomy online library Semiconductors Effect of radiation on Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Strahlenschaden (DE-588)4057825-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Strahlenschaden (DE-588)4057825-2 s DE-604 Halbleiterbauelement (DE-588)4113826-0 s Simoen, Eddy Verfasser aut Springer series in materials science 57 (DE-604)BV000683335 57 HEBIS Datenaustausch Darmstadt application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009916256&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Claeys, Cor Simoen, Eddy Radiation effects in advanced semiconductor materials and devices Springer series in materials science Semiconductors Effect of radiation on Halbleiterbauelement (DE-588)4113826-0 gnd Strahlenschaden (DE-588)4057825-2 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4057825-2 (DE-588)4022993-2 |
| title | Radiation effects in advanced semiconductor materials and devices |
| title_auth | Radiation effects in advanced semiconductor materials and devices |
| title_exact_search | Radiation effects in advanced semiconductor materials and devices |
| title_full | Radiation effects in advanced semiconductor materials and devices C. Claeys ; E. Simoen |
| title_fullStr | Radiation effects in advanced semiconductor materials and devices C. Claeys ; E. Simoen |
| title_full_unstemmed | Radiation effects in advanced semiconductor materials and devices C. Claeys ; E. Simoen |
| title_short | Radiation effects in advanced semiconductor materials and devices |
| title_sort | radiation effects in advanced semiconductor materials and devices |
| topic | Semiconductors Effect of radiation on Halbleiterbauelement (DE-588)4113826-0 gnd Strahlenschaden (DE-588)4057825-2 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Semiconductors Effect of radiation on Halbleiterbauelement Strahlenschaden Halbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009916256&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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