CMOS BiCMOS ULSI: low voltage, low power
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Upper Saddle River, NJ
Prentice Hall
2002
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Schriftenreihe: | Prentice Hall modern semiconductor design series
|
Schlagworte: | |
Beschreibung: | Includes bibliographical references and index |
Beschreibung: | xxv, 585 p. ill. : 24 cm |
ISBN: | 0130321621 |
Internformat
MARC
LEADER | 00000nam a2200000zc 4500 | ||
---|---|---|---|
001 | BV014470119 | ||
003 | DE-604 | ||
005 | 20051213 | ||
007 | t | ||
008 | 020603s2002 xxua||| |||| 00||| eng d | ||
010 | |a 2001036711 | ||
020 | |a 0130321621 |9 0-13-032162-1 | ||
035 | |a (OCoLC)47625302 | ||
035 | |a (DE-599)BVBBV014470119 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
044 | |a xxu |c US | ||
049 | |a DE-898 | ||
050 | 0 | |a TK7874.66 | |
082 | 0 | |a 621.39/5 |2 21 | |
084 | |a ZN 4960 |0 (DE-625)157426: |2 rvk | ||
100 | 1 | |a Yeo, Kiat-Seng |e Verfasser |4 aut | |
245 | 1 | 0 | |a CMOS BiCMOS ULSI |b low voltage, low power |c Kiat-Seng Yeo, Samir S. Rofail, Wang-Ling Goh |
264 | 1 | |a Upper Saddle River, NJ |b Prentice Hall |c 2002 | |
300 | |a xxv, 585 p. |b ill. : 24 cm | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a Prentice Hall modern semiconductor design series | |
500 | |a Includes bibliographical references and index | ||
650 | 4 | |a Integrated circuits |x Ultra large scale integration |x Design and construction | |
650 | 4 | |a Low voltage integrated circuits |x Design and construction | |
650 | 4 | |a Metal oxide semiconductors, Complementary |x Design and construction | |
650 | 0 | 7 | |a ULSI |0 (DE-588)4226286-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a CMOS-Schaltung |0 (DE-588)4148111-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Niederspannung |0 (DE-588)4171864-1 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a CMOS-Schaltung |0 (DE-588)4148111-2 |D s |
689 | 0 | 1 | |a ULSI |0 (DE-588)4226286-0 |D s |
689 | 0 | 2 | |a Niederspannung |0 (DE-588)4171864-1 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Rofail, Samir S. |e Sonstige |4 oth | |
700 | 1 | |a Goh, Wang-Ling |e Sonstige |4 oth | |
999 | |a oai:aleph.bib-bvb.de:BVB01-009878046 |
Datensatz im Suchindex
_version_ | 1804129302496673792 |
---|---|
any_adam_object | |
author | Yeo, Kiat-Seng |
author_facet | Yeo, Kiat-Seng |
author_role | aut |
author_sort | Yeo, Kiat-Seng |
author_variant | k s y ksy |
building | Verbundindex |
bvnumber | BV014470119 |
callnumber-first | T - Technology |
callnumber-label | TK7874 |
callnumber-raw | TK7874.66 |
callnumber-search | TK7874.66 |
callnumber-sort | TK 47874.66 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | ZN 4960 |
ctrlnum | (OCoLC)47625302 (DE-599)BVBBV014470119 |
dewey-full | 621.39/5 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.39/5 |
dewey-search | 621.39/5 |
dewey-sort | 3621.39 15 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01730nam a2200481zc 4500</leader><controlfield tag="001">BV014470119</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20051213 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">020603s2002 xxua||| |||| 00||| eng d</controlfield><datafield tag="010" ind1=" " ind2=" "><subfield code="a">2001036711</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0130321621</subfield><subfield code="9">0-13-032162-1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)47625302</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV014470119</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">xxu</subfield><subfield code="c">US</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-898</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7874.66</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.39/5</subfield><subfield code="2">21</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4960</subfield><subfield code="0">(DE-625)157426:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yeo, Kiat-Seng</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">CMOS BiCMOS ULSI</subfield><subfield code="b">low voltage, low power</subfield><subfield code="c">Kiat-Seng Yeo, Samir S. Rofail, Wang-Ling Goh</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Upper Saddle River, NJ</subfield><subfield code="b">Prentice Hall</subfield><subfield code="c">2002</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xxv, 585 p.</subfield><subfield code="b">ill. : 24 cm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Prentice Hall modern semiconductor design series</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield><subfield code="x">Ultra large scale integration</subfield><subfield code="x">Design and construction</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Low voltage integrated circuits</subfield><subfield code="x">Design and construction</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors, Complementary</subfield><subfield code="x">Design and construction</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">ULSI</subfield><subfield code="0">(DE-588)4226286-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CMOS-Schaltung</subfield><subfield code="0">(DE-588)4148111-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Niederspannung</subfield><subfield code="0">(DE-588)4171864-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">CMOS-Schaltung</subfield><subfield code="0">(DE-588)4148111-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">ULSI</subfield><subfield code="0">(DE-588)4226286-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Niederspannung</subfield><subfield code="0">(DE-588)4171864-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rofail, Samir S.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Goh, Wang-Ling</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-009878046</subfield></datafield></record></collection> |
id | DE-604.BV014470119 |
illustrated | Illustrated |
indexdate | 2024-07-09T19:02:59Z |
institution | BVB |
isbn | 0130321621 |
language | English |
lccn | 2001036711 |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009878046 |
oclc_num | 47625302 |
open_access_boolean | |
owner | DE-898 DE-BY-UBR |
owner_facet | DE-898 DE-BY-UBR |
physical | xxv, 585 p. ill. : 24 cm |
publishDate | 2002 |
publishDateSearch | 2002 |
publishDateSort | 2002 |
publisher | Prentice Hall |
record_format | marc |
series2 | Prentice Hall modern semiconductor design series |
spelling | Yeo, Kiat-Seng Verfasser aut CMOS BiCMOS ULSI low voltage, low power Kiat-Seng Yeo, Samir S. Rofail, Wang-Ling Goh Upper Saddle River, NJ Prentice Hall 2002 xxv, 585 p. ill. : 24 cm txt rdacontent n rdamedia nc rdacarrier Prentice Hall modern semiconductor design series Includes bibliographical references and index Integrated circuits Ultra large scale integration Design and construction Low voltage integrated circuits Design and construction Metal oxide semiconductors, Complementary Design and construction ULSI (DE-588)4226286-0 gnd rswk-swf CMOS-Schaltung (DE-588)4148111-2 gnd rswk-swf Niederspannung (DE-588)4171864-1 gnd rswk-swf CMOS-Schaltung (DE-588)4148111-2 s ULSI (DE-588)4226286-0 s Niederspannung (DE-588)4171864-1 s DE-604 Rofail, Samir S. Sonstige oth Goh, Wang-Ling Sonstige oth |
spellingShingle | Yeo, Kiat-Seng CMOS BiCMOS ULSI low voltage, low power Integrated circuits Ultra large scale integration Design and construction Low voltage integrated circuits Design and construction Metal oxide semiconductors, Complementary Design and construction ULSI (DE-588)4226286-0 gnd CMOS-Schaltung (DE-588)4148111-2 gnd Niederspannung (DE-588)4171864-1 gnd |
subject_GND | (DE-588)4226286-0 (DE-588)4148111-2 (DE-588)4171864-1 |
title | CMOS BiCMOS ULSI low voltage, low power |
title_auth | CMOS BiCMOS ULSI low voltage, low power |
title_exact_search | CMOS BiCMOS ULSI low voltage, low power |
title_full | CMOS BiCMOS ULSI low voltage, low power Kiat-Seng Yeo, Samir S. Rofail, Wang-Ling Goh |
title_fullStr | CMOS BiCMOS ULSI low voltage, low power Kiat-Seng Yeo, Samir S. Rofail, Wang-Ling Goh |
title_full_unstemmed | CMOS BiCMOS ULSI low voltage, low power Kiat-Seng Yeo, Samir S. Rofail, Wang-Ling Goh |
title_short | CMOS BiCMOS ULSI |
title_sort | cmos bicmos ulsi low voltage low power |
title_sub | low voltage, low power |
topic | Integrated circuits Ultra large scale integration Design and construction Low voltage integrated circuits Design and construction Metal oxide semiconductors, Complementary Design and construction ULSI (DE-588)4226286-0 gnd CMOS-Schaltung (DE-588)4148111-2 gnd Niederspannung (DE-588)4171864-1 gnd |
topic_facet | Integrated circuits Ultra large scale integration Design and construction Low voltage integrated circuits Design and construction Metal oxide semiconductors, Complementary Design and construction ULSI CMOS-Schaltung Niederspannung |
work_keys_str_mv | AT yeokiatseng cmosbicmosulsilowvoltagelowpower AT rofailsamirs cmosbicmosulsilowvoltagelowpower AT gohwangling cmosbicmosulsilowvoltagelowpower |