Investigation of the nucleation process of chemical vapour deposited diamond films:
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| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
München
Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München e.V.
2001
|
| Edition: | 1. Aufl. |
| Series: | Selected topics of semiconductor physics and technology
39 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Zsfassung in dt. und ungar. Sprache. - Zugl.: München, Techn. Univ., Diss., 2000 |
| Physical Description: | XVII, 178 S. Ill., graph. Darst. : 21 cm |
| ISBN: | 3932749391 |
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MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV014078252 | ||
| 003 | DE-604 | ||
| 005 | 20021030 | ||
| 007 | t | ||
| 008 | 020102s2001 gw ad|| m||| 00||| eng d | ||
| 016 | 7 | |a 963239872 |2 DE-101 | |
| 020 | |a 3932749391 |9 3-932749-39-1 | ||
| 035 | |a (OCoLC)644298622 | ||
| 035 | |a (DE-599)BVBBV014078252 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-12 |a DE-91 |a DE-19 |a DE-703 | ||
| 084 | |a PHY 658d |2 stub | ||
| 100 | 1 | |a Kátai, Szabolcs |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Investigation of the nucleation process of chemical vapour deposited diamond films |c Szabolcs Kátai. Walter-Schottky-Institut, Zentralinstitut für Physikalische Grundlagen der Halbleiterelektronik, Technische Universität München |
| 250 | |a 1. Aufl. | ||
| 264 | 1 | |a München |b Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München e.V. |c 2001 | |
| 300 | |a XVII, 178 S. |b Ill., graph. Darst. : 21 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Selected topics of semiconductor physics and technology |v 39 | |
| 500 | |a Zsfassung in dt. und ungar. Sprache. - Zugl.: München, Techn. Univ., Diss., 2000 | ||
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Keimbildung |0 (DE-588)4201506-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Substrat |g Mikroelektronik |0 (DE-588)4229622-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a CVD-Verfahren |0 (DE-588)4009846-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Diamant |0 (DE-588)4012069-7 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Diamant |0 (DE-588)4012069-7 |D s |
| 689 | 0 | 1 | |a Keimbildung |0 (DE-588)4201506-6 |D s |
| 689 | 0 | 2 | |a CVD-Verfahren |0 (DE-588)4009846-1 |D s |
| 689 | 0 | 3 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 4 | |a Substrat |g Mikroelektronik |0 (DE-588)4229622-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 830 | 0 | |a Selected topics of semiconductor physics and technology |v 39 |w (DE-604)BV011499438 |9 39 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009642191&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-009642191 | |
Record in the Search Index
| _version_ | 1808046004522450944 |
|---|---|
| adam_text |
TABLE
OF
CONTENTS
SUMMARY
III
ZUSAMMENFASSUNG
VI
OSSZEFOGLALD
X
1
INTRODUCTION
1
2
CHARACTERISATION
METHODS
7
2.1
GAS
PHASE
CHARACTERISATION,
PLASMA
ANALYSIS
7
2.2
FILM
CHARACTERISATION
11
3
CHEMICAL
VAPOUR
DEPOSITION
OF
DIAMOND
19
3.1
THE
CARBON
PHASE
DIAGRAM
19
3.2
LOW
PRESSURE
DIAMOND
DEPOSITION
20
3.3
DEPOSITION
METHODS
22
3.4
CVD
GROWTH
MECHANISMS
25
3.5
NUCLEATION
ENHANCEMENT
METHODS
31
3.6
NUCLEATION
MECHANISMS
IN
GENERAL
34
3.7
EXPERIMENTAL
CHARACTERISATION
OF
THE
BIAS
ENHANCED
NUCLEATION
36
3.8
BIAS
ENHANCED
NUCLEATION
MECHANISMS
45
3.9
ROLE
OF
THE
PLASMA
IN
NUCLEATION
AND
GROWTH
49
4
RESEARCH
OBJECTIVES
56
5
EQUIPMENT
BUILDING
61
5.1
CVD
DEPOSITION
CHAMBERS
61
5.2
INTEGRATED
DEPOSITION-ANALYTICAL
SYSTEM
62
5.3
ION
BEAM
MASS
SPECTROMETER
63
II
6
CHARACTERISATION
OF
THE
BIAS
ENHANCED
NUCLEATION
PROCESS
74
6.1
IN-SITU
PLASMA
ANALYSIS
DURING
NUCLEATION
-
EFFECT
OF
PROCESS
PARAMETERS
74
6.2
IN-SITU
PLASMA
ANALYSIS
DURING
NUCLEATION
-
TEMPORAL
DEVELOPMENT
OF
ION
FLUXES
AND
ENERGIES
DURING
BEN
102
6.3
XPS
STUDIES
OF
THE
EFFECT
OF
DIFFERENT
NUCLEATION
CONDITIONS
ON
THE
SURFACE
COMPOSITION
113
6.4
MODEL
FOR
THE
HETEROEPITAXIAL
ALIGNMENT
OF
DIAMOND
NUCLEI
IN
THE
BEN
PROCESS
121
7
VARIOUS
INVESTIGATIONS
OF
DIAMOND
CVD
126
7.1
INVESTIGATION
OF
THE
IMPURITY
CONCENTRATIONS
OF
DIAMOND-SILICON
INTERFACES
126
7.2
STUDY
OF
THE
STRESS
DISTRIBUTION
OF
HIGHLY
ORIENTED
FREE-STANDING
DIAMOND
FILMS
135
7.3
INVESTIGATION
OF
THE
NUCLEATION
PROCESS
ON
LASER
PRE-TREATED
SILICON
SUBSTRATES
146
8
CONCLUSIONS
AND
OUTLOOK
158
REFERENCES
166
LIST
OF
SYMBOLS
175
ACKNOWLEDGEMENTS
177
LIST
OF
PUBLICATIONS
178 |
| any_adam_object | 1 |
| author | Kátai, Szabolcs |
| author_facet | Kátai, Szabolcs |
| author_role | aut |
| author_sort | Kátai, Szabolcs |
| author_variant | s k sk |
| building | Verbundindex |
| bvnumber | BV014078252 |
| classification_tum | PHY 658d |
| ctrlnum | (OCoLC)644298622 (DE-599)BVBBV014078252 |
| discipline | Physik |
| edition | 1. Aufl. |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 cb4500</leader><controlfield tag="001">BV014078252</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20021030</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">020102s2001 gw ad|| m||| 00||| eng d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">963239872</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3932749391</subfield><subfield code="9">3-932749-39-1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)644298622</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV014078252</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-12</subfield><subfield code="a">DE-91</subfield><subfield code="a">DE-19</subfield><subfield code="a">DE-703</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 658d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kátai, Szabolcs</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Investigation of the nucleation process of chemical vapour deposited diamond films</subfield><subfield code="c">Szabolcs Kátai. Walter-Schottky-Institut, Zentralinstitut für Physikalische Grundlagen der Halbleiterelektronik, Technische Universität München</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. Aufl.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">München</subfield><subfield code="b">Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München e.V.</subfield><subfield code="c">2001</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XVII, 178 S.</subfield><subfield code="b">Ill., graph. Darst. : 21 cm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Selected topics of semiconductor physics and technology</subfield><subfield code="v">39</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Zsfassung in dt. und ungar. Sprache. - Zugl.: München, Techn. Univ., Diss., 2000</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Keimbildung</subfield><subfield code="0">(DE-588)4201506-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Substrat</subfield><subfield code="g">Mikroelektronik</subfield><subfield code="0">(DE-588)4229622-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Diamant</subfield><subfield code="0">(DE-588)4012069-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Diamant</subfield><subfield code="0">(DE-588)4012069-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Keimbildung</subfield><subfield code="0">(DE-588)4201506-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Substrat</subfield><subfield code="g">Mikroelektronik</subfield><subfield code="0">(DE-588)4229622-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Selected topics of semiconductor physics and technology</subfield><subfield code="v">39</subfield><subfield code="w">(DE-604)BV011499438</subfield><subfield code="9">39</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009642191&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-009642191</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV014078252 |
| illustrated | Illustrated |
| indexdate | 2024-08-22T00:37:16Z |
| institution | BVB |
| isbn | 3932749391 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009642191 |
| oclc_num | 644298622 |
| open_access_boolean | |
| owner | DE-12 DE-91 DE-BY-TUM DE-19 DE-BY-UBM DE-703 |
| owner_facet | DE-12 DE-91 DE-BY-TUM DE-19 DE-BY-UBM DE-703 |
| physical | XVII, 178 S. Ill., graph. Darst. : 21 cm |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München e.V. |
| record_format | marc |
| series | Selected topics of semiconductor physics and technology |
| series2 | Selected topics of semiconductor physics and technology |
| spelling | Kátai, Szabolcs Verfasser aut Investigation of the nucleation process of chemical vapour deposited diamond films Szabolcs Kátai. Walter-Schottky-Institut, Zentralinstitut für Physikalische Grundlagen der Halbleiterelektronik, Technische Universität München 1. Aufl. München Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München e.V. 2001 XVII, 178 S. Ill., graph. Darst. : 21 cm txt rdacontent n rdamedia nc rdacarrier Selected topics of semiconductor physics and technology 39 Zsfassung in dt. und ungar. Sprache. - Zugl.: München, Techn. Univ., Diss., 2000 Silicium (DE-588)4077445-4 gnd rswk-swf Keimbildung (DE-588)4201506-6 gnd rswk-swf Substrat Mikroelektronik (DE-588)4229622-5 gnd rswk-swf CVD-Verfahren (DE-588)4009846-1 gnd rswk-swf Diamant (DE-588)4012069-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Diamant (DE-588)4012069-7 s Keimbildung (DE-588)4201506-6 s CVD-Verfahren (DE-588)4009846-1 s Silicium (DE-588)4077445-4 s Substrat Mikroelektronik (DE-588)4229622-5 s DE-604 Selected topics of semiconductor physics and technology 39 (DE-604)BV011499438 39 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009642191&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Kátai, Szabolcs Investigation of the nucleation process of chemical vapour deposited diamond films Selected topics of semiconductor physics and technology Silicium (DE-588)4077445-4 gnd Keimbildung (DE-588)4201506-6 gnd Substrat Mikroelektronik (DE-588)4229622-5 gnd CVD-Verfahren (DE-588)4009846-1 gnd Diamant (DE-588)4012069-7 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4201506-6 (DE-588)4229622-5 (DE-588)4009846-1 (DE-588)4012069-7 (DE-588)4113937-9 |
| title | Investigation of the nucleation process of chemical vapour deposited diamond films |
| title_auth | Investigation of the nucleation process of chemical vapour deposited diamond films |
| title_exact_search | Investigation of the nucleation process of chemical vapour deposited diamond films |
| title_full | Investigation of the nucleation process of chemical vapour deposited diamond films Szabolcs Kátai. Walter-Schottky-Institut, Zentralinstitut für Physikalische Grundlagen der Halbleiterelektronik, Technische Universität München |
| title_fullStr | Investigation of the nucleation process of chemical vapour deposited diamond films Szabolcs Kátai. Walter-Schottky-Institut, Zentralinstitut für Physikalische Grundlagen der Halbleiterelektronik, Technische Universität München |
| title_full_unstemmed | Investigation of the nucleation process of chemical vapour deposited diamond films Szabolcs Kátai. Walter-Schottky-Institut, Zentralinstitut für Physikalische Grundlagen der Halbleiterelektronik, Technische Universität München |
| title_short | Investigation of the nucleation process of chemical vapour deposited diamond films |
| title_sort | investigation of the nucleation process of chemical vapour deposited diamond films |
| topic | Silicium (DE-588)4077445-4 gnd Keimbildung (DE-588)4201506-6 gnd Substrat Mikroelektronik (DE-588)4229622-5 gnd CVD-Verfahren (DE-588)4009846-1 gnd Diamant (DE-588)4012069-7 gnd |
| topic_facet | Silicium Keimbildung Substrat Mikroelektronik CVD-Verfahren Diamant Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009642191&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV011499438 |
| work_keys_str_mv | AT kataiszabolcs investigationofthenucleationprocessofchemicalvapourdepositeddiamondfilms |