X-ray scattering from semiconductors:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
London
Imperial College Press
2000
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | 287 S. Ill., graph. Darst. |
| ISBN: | 1860941591 |
Staff View
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Record in the Search Index
| _version_ | 1804128583876083712 |
|---|---|
| adam_text | X-RAY SCATTERING FROM SEMICONDUCTORS PAUL F FEWSTER PHILIPS ANALYTICAL
RESEARCH CENTRE CONTENTS CHAPTER 1 AN INTRODUCTION TO SEMICONDUCTOR
MATERIALS 1 1.1. GENERAT OUTLINE 1 1.2. SEMICONDUCTORS 2 1.3. METHOD 6
1.4. PROPERTIES OF X-RAYS 8 1.5. INSTRUMENTATION 11 1.6. SAMPLE
DEFINITION 11 REFERENCES 21 CHAPTER 2 AN INTRODUCTION TO X-RAY
SCATTERING 23 2.1. THE INTERACTION OF X-RAY PHOTONS WITH THE SAMPLE 23
2.2 THE NATURE OF THE SCATTERED X-RAY PHOTON WITH NO ENERGY LOSS 25 2.3.
THE NEAR EXACT THEORETICAL DESCRIPTION OF SCATTERING 33 2.3.1. THE
CONDITION OF A SINGLE WAVE GENERATED IN A CRYSTAL 43 2.3.2. THE
CONDITION OF TWO WAVES GENERATED IN A CRYSTAL 45 2.3.3. A FURTHER
DISCUSSION ON THE DEVIATION PARAMETER ** 52 2.4. A SCATTERING THEORY TO
ACCOMMODATE REAL CRYSTALS 55 2.5. SCATTERING THEORY FOR STRUCTURES WITH
DEFECTS 59 2.6. SCATTERING THEORY OF RECIPROCAL SPACE MAPS 63 2.7.
APPROXIMATE THEORY: THE KINEMATICAL APPROACH 66 2.7.1. COMPARISON
BETWEEN DYNAMICAL AND KINEMATICAL MODELS OF DIFFRACTION 67 2.7.2. THE
IMPORTANT DERIVATIONS OF THE KINEMATICAL THEORY 6 8 2.7.3. LATERAL
DIMENSION ANALYSIS 72 2.7.4. SCATTERING BY DEFECTS; DIFFUSE SCATTERING
76 2.8. OPTICAL THEORY APPLIED TO REFLECTOMETRY 81 2.8.1. SOME GENERAL
CONCLUSIONS FROM THIS ANALYSIS 86 2.8.2. IMPERFECT INTERFACES 88 2.9.
IN-PLANE SCATTERING 93 2.10. TRANSMISSION GEOMETRY 95 2.11. GENERAL
CONCLUSIONS 98 REFERENCES 99 CHAPTER 3 EQUIPMENT FOR MEASURING
DIFFRACTION PATTERNS 101 3.1. GENERAL CONSIDERATIONS 3.2. BASICS OF THE
RESOLUTION FUNCTION 103 3.3. X-RAY SOURCE 107 3.4. X-RAY DETECTORS 109
3.4.1. THE PROPORTIONAL DETECTOR 109 3.4.2. THE SCINTILLATION DETECTOR
113 3.4.3. THE SOLID STATE DETECTOR 114 3.4.4. POSITION SENSITIVE
DETECTORS 115 3.5. INCIDENT BEAM CONDITIONING WITH PASSIVE COMPONENTS
117 3.5.1. INCIDENT BEAM SLITS: FIXED ARRANGEMENT 117 3.5.2. INCIDENT
BEAM SLITS: VARIABLE ARRANGEMENT 120 3.5.3. PARALLEL PLATE COLLIMATORS
122 3.5.4. GENERAL CONSIDERATIONS OF SLITS 123 3.6. INCIDENT BEAM
CONDITIONING WITH ACTIVE COMPONENTS 123 3.6.1. INCIDENT BEAM FILTERS 12
4 3.6.2. INCIDENT BEAM SINGLE CRYSTAL CONDITIONERS 124 3.6.2.1. SINGLE
CRYSTAL GROOVE CONDITIONERS 125 3.6.3. MULTIPLE CRYSTAL MONOCHROMATORS
128 3.6.4. MULTILAYER BEAM CONDITIONERS 132 3.6.5. BEAM PIPES 134 3.7.
DIFFRACTOMETER OPTIONS: COMBINATIONS WITH SCATTERED BEAM ANALYSERS 136
3.7.1. SINGLE SLIT INCIDENT AND SCATTERED BEAM DIFFRACTOMETERS 13 7
3.7.1.1 APPLICATIONS IN REFLECTOMETRY 13 9 3.7.2. ENHANCEMENTS TO THE
SINGLE SLIT INCIDENT AND SCATTERED BEAM DIFFRACTOMETERS 141 3.7.3.
DOUBLE SLIT INCIDENT AND PARALLEL PLATE COLLIMATOR SCATTERED BEAM
DIFFRACTOMETERS 142 3.7.3.1. ENHANCED DOUBLE-SLIT INCIDENT AND
PARALLEL-PLATE COLLIMATOR SCATTERED BEAM DIFFRACTOMETERS 143 3.7.3.2.
APPLICATIONS FOR LOW-RESOLUTION IN-PLANE SCATTERING 143 3.7.4.
DIFFRACTOMETERS USING VARIABLE SLIT COMBINATIONS 146 3.7.4.1.
APPLICATIONS IN REFLECTOMETRY 146 3.8. SCATTERED BEAM ANALYSERS WITH
ACTIVE COMPONENTS 147 3.8.1. THE DOUBLE CRYSTAL DIFFRACTOMETER 147
3.8.1.2. ALIGNMENT OF HIGH RESOLUTION DIFFRACTOMETERS 148 3.8.1.3.
APPLICATIONS OF THE DOUBLE CRYSTAL DIFFRACTMETER 150 3.8.2. THE TRIPLE
CRYSTAL DIFFRACTOMETER 150 3.8.2.1. APPLICATIONS OF THE TRIPLE AXIS
DIFFRACTOMETER 151 3.8.3. THE MULTIPLE CRYSTAL DIFFRACTOMETER 151
3.8.3.1. GENERAL CONSIDERATIONS OF DATA COLLECTION 156 3.8.3.2.
ALIGNMENT OF MULTIPLE CRYSTAL DIFFRACTOMETERS 157 3.8.3.3. THREE
DIMENSIONAL RECIPROCAL SPACE MAPPING 160 3.8.3.4. APPLICATIONS OF
MULTIPLE CRYSTAL DIFFRACTOMETRY 162 3.8.3.5. IN-PLANE SCATTERING IN VERY
HIGH RESOLUTION 163 3.9. GENERAL CONCLUSIONS 165 REFERENCES 165 CHAPTER
4 A PRACTICAL GUIDE TO THE EVALUATION OF STRUCTURAL PARAMETERS 167 4.1.
GENERAL CONSIDERATIONS 167 4.2. GENERAL PRINCIPLES 168 4.3. ANALYSIS OF
BULK SEMICONDUCTOR MATERIALS 169 4.3.1. ORIENTATION 170 4.3.1.1. SURFACE
ORIENTATION - THE LAUE METHOD 170 4.3.1.2. DETERMINING THE ORIENTATION
BY DIFFRACTOMETRY 173 4.3.1.2.2. MONOCHROMATOR AND OPEN DETECTOR METHOD
173 4.3.1.2.3. MULTIPLE CRYSTAL DIFFRACTOMETER METHOD 175 4.3.1.3.
DETERMINING POLAR DIRECTIONS 175 4.3.2. REVEALING THE MOSAIC STRUCTURE
IN A BULK SAMPLE 178 4.3.2.1. MOSAIC SAMPLES WITH LARGE TILTS 178
4.3.2.2. HIGH RESOLUTION SCANNING METHODS (LANG METHOD) 180 4.3.2.3.
MULTIPLE CRYSTAL METHODS OF REVEALING MOSAIC BLOCKS 183 4.3.3.
CHARACTERISING THE SURFACE QUALITY 18 8 4.3.4. MEASURING THE ABSOLUTE
INTERATOMIC SPACING IN SEMICONDUCTOR MATERIALS: 191 4.3.5. MEASURING THE
CURVATURE OF CRYSTALLINE AND NON-CRYSTALLINE SUBSTRATES: 193 4.4.
ANALYSIS OF NEARLY PERFECT SEMICONDUCTOR MULTI-LAYER STRUCTURES 196
4.4.1. THE FIRST ASSUMPTION AND VERY APPROXIMATE METHOD IN DETERMINING
COMPOSITION: 196 4.4.2. THE DETERMINATION OF THICKNESS: 201 4.4.2.1.
DETERMINING THE THICKNESS FROM THE FRINGES IN THE REFLECTOMETRY PROFILE:
204 4.4.3. THE SIMULATION OF ROCKING CURVES TO OBTAIN COMPOSITION AND
THICKNESS 205 4.4.3.1. EXAMPLE OF AN ANALYSIS OF A NEARLY PERFECT
STRUCTURE 206 4.4.3.2. DIRECT ANALYSIS FROM PEAK SEPARATION AND FRINGE
SEPARATIONS 20 7 4.4.3.3. SIMULATION USING AN ITERATIVE ADJUSTMENT OF
THE MODEL 208 4.4.3.3.1. LINKING PARAMETERS TO COPE WITH COMPLEX
MULTI-LAYER STRUCTURES 208 4.4.3.4. AUTOMATIC FITTING OF THE DATA BY
SIMULATION 210 4.4.3.5. DATA COLLECTION WITH THE 2-CRYSTAL 4-REFLECTION
MONOCHROMATOR AND 3-REFLECTION ANALYSER 213 4.4.3.6. RECIPROCAL SPACE
MAP TO ANALYSE THE IMPERFECTIONS IN SAMPLES 215 4.4.3.7. TAKING ACCOUNT
OF TILTS IN ROCKING CURVE ANALYSES 218 4.4.3.8. MODELLING THE EXTENT OF
THE INTERFACE DISRUPTION IN RELAXED STRUCTURES 221 4.4.3.9. DETAILED
ANALYSIS TO REVEAL ALLOY SEGREGATION AND THE FULL STRUCTURE OF A
MULTI-LAYER 222 4.4.4. ANALYSIS OF PERIODIC MULTI-LAYER STRUCTURES: 224
4.4.4.1. THE ANALYSIS USING DIRECT INTERPRETATION OF THE SCATTERING
PATTERN: 224 4.4.4.2. THE ANALYSIS USING BASIC KINEMATICAL THEORY: 226
4.4.4.3. ANALYSIS OF PERIODIC MULTI-LAYERS WITH DYNAMICAL THEORY 230
4.4.4.4. ANALYSIS OF PERIODIC STRUCTURES WITH REFLECTOMETRY 233 4.4.4.5.
ANALYSIS OF A NEARLY PERFECT EPITAXIAL PERIODIC MULTI-LAYER 234
4.4.4.5.1. ANALYSIS BASED ON THE KINEMATICAL APPROACH: 234 4.4.4.5.2.
ANALYSIS BASED ON THE OPTICAL THEORY WITH REFLECTOMETRY: 240 4.4.4.5.3.
ANALYSIS BASED ON THE DYNAMICAL THEORY SIMULATION: 241 ANALYSIS OF
MOSAIC STRUCTURES (TEXTURED EPITAXY) 243 ANALYSIS OF PARTIALLY RELAXED
MULTI-LAYER STRUCTURES (TEXTURED EPITAXY) 244 4.6.1. MEASURING THE STATE
OF STRAIN IN PARTIALLY RELAXED THIN LAYERS 246 4.6.2. OBTAINING THE
COMPOSITION IN PARTIALLY RELAXED THIN LAYERS 247 4.6.3. THE MEASUREMENT
OF THE DEGREE OF RELAXATION AND MISMATCH IN THIN LAYERS 250 4.6.4. THE
DETERMINATION OF RELAXATION AND COMPOSITION WITH VARIOUS METHODS 251
4.6.4.1. DETERMINATION BY RECIPROCAL SPACE MAPS ON AN ABSOLUTE SCALE:
251 4.6.4.2. DETERMINATION BY USING A SERIES OF ROCKING CURVES AND
ANALYSER SCANS 253 4.6.4.3. DETERMINATION BY RECIPROCAL SPACE MAPS ON A
RELATIVE SCALE: 255 4.6.4.4. DETERMINATION BY ROCKING CURVES ALONE 256
4.6.4.5. REVEALING DISLOCATIONS AND DEFECTS BY TOPOGRAPHY: 258 4.6.4.6.
SIMULATING STRUCTURES WITH DEFECTS 25 9 4.7. ANALYSIS OF LATERALLY
INHOMOGENEOUS MULTI-LAYERS (TEXTURED POLYCRYSTALLINE) 261 4. 7. 1.
DIRECT ANALYSIS OF LATERALLY INHOMOGENEOUS MULTI-LAYERS: 261 4.7.2.
SIMULATION OF LATERALLY INHOMOGENEOUS MULTI-LAYERS: 264 4.7.3. LATERAL
INHOMOGENEITIES WITHOUT LARGE MISFITS: 266 4.7.3.1. ANALYSING EPITAXIAL
LAYERS WITH VERY SMALL TWINNED REGIONS 267 4.7.3.2. ANALYSING TWIN
COMPONENTS LARGER THAN 5 MICRONS 268 4.8. ANALYSIS OF TEXTURED
POLYCRYSTALLINE SEMICONDUCTORS 269 4.9. ANALYSIS OF NEARLY PERFECT
POLYCRYSTALLINE MATERIALS 270 4.9.1. MEASUREMENT OF THICKNESS OFCRO X ON
GLASS 271 4.9.2. ANALYSIS OF VERY WEAK SCATTERING 21A 4.10. CONCLUDING
REMARKS 276 REFERENCES 276 APPENDIX 1 GENERAL CRYSTALLOGRAPHIC RELATIONS
A.L. INTRODUCTION 279 A.2. INTERPLANAR SPACINGS 279 A.3. STEREOGRAPHIC
PROJECTIONS: 281
|
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| institution | BVB |
| isbn | 1860941591 |
| language | English |
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| spelling | Fewster, Paul F. Verfasser aut X-ray scattering from semiconductors Paul F. Fewster London Imperial College Press 2000 287 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Semiconductors X-rays Scattering Röntgenstreuung (DE-588)4178324-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Röntgenstreuung (DE-588)4178324-4 s Halbleiter (DE-588)4022993-2 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009408484&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Fewster, Paul F. X-ray scattering from semiconductors Semiconductors X-rays Scattering Röntgenstreuung (DE-588)4178324-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4178324-4 (DE-588)4022993-2 |
| title | X-ray scattering from semiconductors |
| title_auth | X-ray scattering from semiconductors |
| title_exact_search | X-ray scattering from semiconductors |
| title_full | X-ray scattering from semiconductors Paul F. Fewster |
| title_fullStr | X-ray scattering from semiconductors Paul F. Fewster |
| title_full_unstemmed | X-ray scattering from semiconductors Paul F. Fewster |
| title_short | X-ray scattering from semiconductors |
| title_sort | x ray scattering from semiconductors |
| topic | Semiconductors X-rays Scattering Röntgenstreuung (DE-588)4178324-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Semiconductors X-rays Scattering Röntgenstreuung Halbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009408484&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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