Extended abstracts of the 1998 International Conference on Solid State Devices and Materials: September 7 - 10, 1998, Hiroshima, International Conference Center Hiroshima
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Tokyo
Japan Soc. of Applied Physics
1998
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXXII, 21, 510 S. Ill., graph. Darst. |
| ISBN: | 4930813883 |
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| 245 | 1 | 0 | |a Extended abstracts of the 1998 International Conference on Solid State Devices and Materials |b September 7 - 10, 1998, Hiroshima, International Conference Center Hiroshima |
| 246 | 1 | 3 | |a Solid state devices and materials |
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| adam_text | IMAGE 1
EXTENDED ABSTRACTS OF
THE 1998 INTERNATIONAL CONFERENCE ON
SOLID STATE DEVICES AND MATERIALS
SEPTEMBER 7-10, 1998
HIROSHIMA
INTERNATIONAL CONFERENCE CENTER HIROSHIMA
SPONSORED BY
THE JAPAN SOCIETY OF APPLIED PHYSICS
TECHNICAL COSPONSORED BY
IEEE ELECTRON DEVICES SOCIETY
IN COOPERATION WITH
THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS
IEEE TOKYO SECTION THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN THE
ELECTROCHEMICAL SOCIETY OF JAPAN THE INSTITUTE OF IMAGE INFORMATION AND
TELEVISION ENGINEERS
IMAGE 2
CONTENTS
SEPTEMBER 7, MONDAY
PHOENIX HALL
P: OPENING SESSION (10:15-12:20)
10:15 (0) WELCOME ADDRESS, M. HIROSE, ORGANIZING COMMITTEE CHAIRPERSON
10:25 (1) SSDM 30TH ANNIVERSARY MEMORIAL TALK, PAST, PRESENT AND FUTURE
OF SOLID STATE DEVICES (INVITED)
S. TANAKA, INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, JAPAN 2
10:45 (2) THE FUTURE OF THE IT INDUSTRY AND JAPAN S ROLE (INVITED) T.
SEKIMOTO, NEC, JAPAN 4
11:25 (3) SELF ASSEMBLED QUANTUM DOTS AND DEVICE PROSPECTS (INVITED)
P.M. PETROFF, W. SCHOENFELD, T. LUNDSTROM AND N. HORIGUCHI, UNIV.
CALIFORNIA, SANTA BARBARA, U.S.A 6
12:05 (4) SSDM AWARDS PRESENTATION
ROOM A
A-L: DOPING AND RELATED TECHNOLOGIES (13:30-15:30)
13:30 (1) HIGH PERFORMANCE N/P JUNCTION CHARACTERISTICS USING HIGH
TEMPERATURE RTA IN CON JUNCTION WITH H2 TREATMENT S. MIYAZAKI, K.
HAMADA AND T. KITANO, NEC, JAPAN 8
13:50 (2) LATERAL DIFFUSION DISTANCE MEASUREMENT FOR 40-80 NM JUNCTIONS
BY ETCHING/TEM-EELS METHOD Y. KUNIMUNE, N. NISHINO, N. KODAMA, H.
KIKUCHI, T. TODA, A. MINEJI, S. SHISHIGUCHI AND S. SAITO, NEC, JAPAN 10
14:10 (3) STICKING CONFIGURATION OF BORON ATOMS FROM B2H6 ON SILICON
DURING RAPID VAPOR-PHASE DOPING Y. KIYOTA, H. TANAKA* AND T. INADA,
HITACHI AND *HOSEI UNIV., JAPAN 12
14:30 (4) BORON SEGREGATION TO {311} DEFECTS INDUCED BY
SELF-IMPLANTATION DAMAGE IN SI J. XIA, T. SAITO, R. KIM, T. AOKI, Y.
KAMAKURA AND K. TANIGUCHI, OSAKA UNIV.,
JAPAN 14
14:50 (5) HYDROGEN-ENHANCING BORON PENETRATION IN P-MOS DEVICES DURING
SI02 CHEMICAL VAPOR
DEPOSITION T. AOYAMA, K. SUZUKI, H. TASHIRO, Y. TADA, Y. KATAOKA, H.
ARIMOTO AND K. HORIUCHI, FUJITSU LABS., JAPAN 16
15:10 (6) QUANTITATIVE EVALUATION OF DOPANT LOSS IN LOW ENERGY AS
IMPLANTATION FOR LOW-RESIS
TIVE, ULTRA SHALLOW SOURCE/DRAIN FORMATION
M. KOH, K. EGUSA*, H. FURUMOTO*, K. SHIBAHARA*, S. YOKOYAMA* AND M.
HIROSE*, JAPAN SCI. & TECHNOL. AND *HIROSHIMA UNIV., JAPAN 18
A-2: ADVANCED INSULATOR MATERIALS (15:50-17:30)
15:50 (1) CHARGE-FREE AND DOPANT DEPENDENCE-FREEETCHING PROCESSES USING
NON-MAXWELLIAN ELEC TRON ENERGY DISTRIBUTIONS IN ULTRA-HIGH-FREQUENCY
PLASMA S. SAMUKAWA, H. OHTAKE AND K. NOGUCHI, NEC, JAPAN 20
16:10 (2) SELF-LIMITING ATOMIC-LAYER SELECTIVE DEPOSITION OF SILICON
NITRIDE BY TEMPERATURE-CON TROLLED METHOD
K. OOBA, Y. NAKASHIMA, A. NAKAJIMA AND S. YOKOYAMA, HIROSHIMA UNIV.,
JAPAN 22
XVII
IMAGE 3
16:30 (3)
16:50 (4)
17:10 (5)
ULTRA-LOW-TEMPERATURE FORMATION OF SI NITRIDE FILM BY DIRECT NITRIDATION
EMPLOYING
HIGH-DENSITY AND LOW-ENERGY ION BOMBARDMENT Y. SAITO, K. SEKINE, M.
HIRAYAMA AND T. OHMI, TOHOKU UNIV., JAPAN 24
NEW PENTACOORDINATED SI(PCS) MODEL FOR SIN CVD MECHANISM S. SAIDA AND Y.
TSUNASHIMA, TOSHIBA, JAPAN 26
FORMATION OF VERY THIN EPITAXIAL A1203 PRE-LAYER WITH VERY SMOOTH
SURFACE ON SI(LLL)
USING PROTECTIVE OXIDE LAYER Y.-C. JUNG, H. MIURA AND M. ISHIDA,
TOYOHASHI UNIV. TECHNOL., JAPAN 28
ROOM B
B-L: MEMORY DEVICES (14:00-16:00)
14:00 (1)
14:20 (2)
14:40 (3)
15:00 (4)
15:20 (5)
15:40 (6)
34
36
IMPLEMENTATION OF SYSTEM ON A CHIP MERGING DRAM AND ANALOG WITH HIGH
PERFOR
MANCE 0.35UM LOGIC DEVICE S. YU, J.S. YOON, H.R. LEE, C.-S. KWON, D.W.
KIM, W.C. KIM AND C.-S. CHOI, SAM SUNG, KOREA
30
TRAP ASSISTED LEAKAGE MECHANISMOF WORST JUNCTION IN GIGA-BIT DRAM
USING NEGATIVE
WORD-LINE VOLTAGE H. SUZUKI, M. KOJIMA AND Y. NARA, FUJITSU LABS., JAPAN
32
SILICIDE-EXTENSION TECHNOLOGY FOR HIGH-DENSITY EMBEDDED SRAM CELLS IN
0.1SUM CMOS GENERATION AND BEYOND K. MATSUI, K. NODA, K. INOUE, T.
ITANI, H. IWASAKI, T. YOSHII AND T. TANIGAWA, NEC, JAPAN
OPTIMIZATION OF GIGA-BIT DRAM CELL TRANSISTORS BY CHANNEL AND DRAIN
ENGINEERING M. KOJIMA, H. SUZUKI, T. MIYASHITA, H. ANZAI, T. NAGATA, K.
TAKAHASHI, M. SATO AND Y. NARA, FUJITSU LABS., JAPAN
AN ANALYTICAL DELAY MODEL FOR READ OPERATION AT ANY POSITION ON DRAM BIT
LINES H. LIN, C.-H. SHA AND S.-C. WONG*, NATL. CHUNG-HSING UNIV. AND
*FENG-CHIA UNIV., TAIWAN 38
SCALING LAW FOR SECONDARY COSMIC-RAY NEUTRON-INDUCED SOFT-ERRORS IN
DRAMS
S. SATOH, Y. TOSAKA AND T. ITAKURA, FUJITSU LABS., JAPAN 40
B-2: HIGTW MATERIALS AND DEVICES (16:20-18:10)
16:20 (1) A SYSTEM CHIP INNOVATION BY THE FERROELECTRIC MEMORY
TECHNOLOGY (INVITED) I. MATSUMOTO, ROHM, JAPAN 42
16:50 (2) CHEMICAL VAPOR DEPOSITION OF RU AND ITS APPLICATION IN (BA,
SR)TI03 CAPACITORS FOR FU TURE DRAM
T. AOYAMA, M. KIYOTOSHI, S. YAMAZAKI AND K. EGUCHI, TOSHIBA, JAPAN 44
17:10 (3) ELECTRICAL PROPERTIES OF (BA,SR)TI03 FILMS ON RU BOTTOM
ELECTRODES PREPARED BY ECR PLASMA CVD AT EXTREMELY LOW TEMPERATURE AND
RTA S. SONE, R. AKAHANE, K. ARITA, H. YABUTA, S. YAMAMICHI, M. YOSHIDA
AND Y. KATO,
NEC, JAPAN 46
17:30 (4) NEW PRACTICAL MODEL FOR ENDURANCE DEGRADATION ANALYSIS OF
FERROELECTRIC CAPACITORS T. ESHITA AND Y. ARIMOTO, FUJITSU LABS., JAPAN
48
17:50 (5) CONFORMAL STEP COVERAGE OF (BA,SR)TI03 FILMS PREPARED BY
LIQUID SOURCE CVD USING TI(T-BUO)2(DPM)2 T. KAWAHARA, S. MATSUNO, M.
YAMAMUKA, M. TARUTANI, T. SATO, T. HORIKAWA, F. UCHIKAWA AND K. ONO,
MITSUBISHI, JAPAN 50
ROOM C
C-L: SYMPOSIUMON FABRICATION, CHARACTERIZATION AND DEVICEAPPLICATION OF
QUANTUM NANOSTRUCTURES (I) (14:00-16:00)
14:00 (1) MAGNETO-OPTICAL STUDY OF SINGLE INGAAS QUANTUM DOT (INVITED)
Y. TODA, K. SUZUKI, O. MORIWAKI, M. NISHIOKAAND Y. ARAKAWA, UNIV. TOKYO,
JAPAN 52
XVIII
IMAGE 4
F
14:30 (2) LIGHT EMISSION FROM INDIVIDUAL SELF-ASSEMBLED INAS/GAAS
QUANTUM DOTS EXCITED BY TUNNELING CURRENT INJECTION K. YAMANAKA, K.
SUZUKI, S. ISHIDA AND Y. ARAKAWA, UNIV. TOKYO, JAPAN 54
14:45 (3) LATERAL COMPOSITION MODULATION INDUCED STRUCTURAL ANISOTROPY
IN INP/GALNP QUANTUM DOT SYSTEM H.-W. REN, M. SUGISAKI, S. SUGOU, K.
NISHI*, A. GOMYO* AND Y. MASUMOTO, ERATO, JST AND *NEC, JAPAN 56
15:00 (4) THREE-DIMENSIONALLY CONFINED NANOSTRUCTURES GROWN BY MBE ON
SQUARE-AND TRIANGUL AR-HOLE PATTERNED GAAS (311)A SUBSTRATES Z.C. NIU,
R. NOTZEL, U. JAHN, H.-P. SCHONHERR, J. FRICKE AND K.H. PLOOG,
PAUL-DRUDE INST., GERMANY 58
15:15 (5) INFRARED PHOTODETECTOR WITH SELF-ORGANIZED INAS QUANTUM DOTS
T. CHO, J. KIM*, J. OH*, J. CHOE** AND S. HONG, KAIST, *HANYANGUNIV. AND
**KYUNGHEE UNIV., KOREA 60
15:30 (6) GAAS NANOCRYSTALS FABRICATED BY GA AND AS ION IMPLANTATION Y.
KANEMITSU, S. MIURA, S. OKAMOTO, K.S. MIN* AND H.A. ATWATER*, NARA INST.
SCI. & TECHNOL., JAPAN AND *CALIFORNIA INST. TECHNOL., U.S.A 62
15:45 (7) QUANTUM CONFINEMENT EFFECT IN SELF-ASSEMBLED, NANOMETER
SILICON DOTS S.A. DING, M. IKEDA*, M. FUKUDA*, S. MIYAZAKI* AND M.
HIROSE*, JAPAN SCI. & TECH NOL. AND *HIROSHIMA UNIV., JAPAN 64
C-2: SYMPOSIUM ON FABRICATION, CHARACTERIZATION AND DEVICE APPLICATION
OF QUANTUM NANOSTRUC TURES (II) (16:20-17:50)
16:20 (1) SINGLE-ELECTRON TUNNELING IN NANOCRYSTALLINE SILICON (INVITED)
S. ODA, A. DUTTA, S.-P. LEE, Y. HAYAFUNE, S. HARA, K. NISHIGUCHI, B.J.
HINDS AND S. HATATANI,-TOKYO INST. TECHNOL., JAPAN 66
16:50 (2) GATED RESONANT TUNNELING STRUCTURESWITH BURIED TUNGSTEN
GRATING ADJACENT TO SEMICON DUCTOR HETEROSTRUCTURES M. SUHARA, L.-E.
WERNERSSON*, B. GUSTAFSON*, N. CARLSSON*, W. SEIFERT*, L. SAMUELSON* AND
K. FURUYA, TOKYO INST. TECHNOL., JAPAN AND *LUND UNIV., SWEDEN- 68
17:05 (3) STM NANO-LITHOGRAPHY WITH SI02 MASK N. LI, T. YOSHINOBU AND H.
IWASAKI, OSAKA UNIV., JAPAN 70
17:20 (4) FABRICATION OF HIGH-RESOLUTIONAND HIGH-ASPECT-RATIO PATTERNING
ON A STEPPED SUBSTRATE BY SCANNING PROBE LITHOGRAPHY USING A
MULTILAYER-RESIST SYSTEM M. ISHIBASHI, N. SUGITA, S. HEIKE, H. KAJIYAMA
AND T. HASHIZUME, HITACHI, JAPAN 72
17:35 (5) FORMATION OF SIZE- AND POSITION-CONTROLLED NANOMETER SIZE PT
DOTS ON GAAS AND INP SUBSTRATES BY PULSED ELECTROCHEMICAL DEPOSITION T.
SATO, C. KANESHIRO, H. OKADA AND H. HASEGAWA, HOKKAIDO UNIV., JAPAN 74
ROOM D
D-L: RF AND ANALOGUE SI DEVICES (14:00-15:40)
14:00 (1) RF DEVICE TRENDS FOR WIRELESS APPLICATIONS (INVITED) M.
MURAGUCHI, NTT, JAPAN 76
14:30 (2) STRAIN ENGINEERING OF SILICON-BASED HETEROSTRUCTURES:
MATERIALS AND DEVICES (INVITED) J.L. HOYT, K. RIM, T.O. MITCHELL, D.V.
SINGH AND J.F. GIBBONS, STANFORD UNIV., U.S.A 78
15:00 (3) RF NOISE STUDY OF SMALL GATE WIDTH SI-MOSFETS UP TO 8GHZ
APPLICATION FOR LOW POW ER CONSUMPTION
E. MORIFUJI, C.E. BIBER*. W. BACHTOLD*, T. OHGURO, T. YOSHITOMI, H.
KIMIJIMA, T. MORIMOTO, H.S. MOMOSE, Y. KATSUMATA AND H. IWAI, TOSHIBA,
JAPAN AND *SWISS FEDERAL INST. TECHNOL., SWITZERLAND 80
15:20 (4) AN ANALOG INTEGRATED CIRCUIT FOR MOTION DETECTION BASED ON
BIOLOGICAL CORRELATION MODEL M. OHTANI, T. ASAI, N. OHSHIMA AND H.
YONEZU, TOYOHASHI UNIV. TECHNOL., JAPAN... .82
IMAGE 5
D-2: CMOS DEVICES (16:00-18:10) 16:00 (1) MODELING AND CHARACTERIZATION
FOR ULTRA DEEP SUBMISSION CMOS DEVICES (INVITED) N.D. ARORA, SIMPLEX
SOLUTIONS, U.S.A ^
16:30 (2) NOTICEABLE ENHANCEMENT OF EDGE EFFECT IN SHORT CHANNEL
CHARACTERISTICS OFTRENCH-ISOLAT ED MOSFETS
T. OISHI, K. SHIOZAWA, A. FURUKAWA, Y. ABE AND Y. TOKUDA, MITSUBISHI,
JAPAN 86 16:50 (3) STRESS-INDUCED DEVICE DEGRADATION DUE TO DIE-ATTACH
PROCESS AFTER AREA BUMP FORMA TION
N. SHIMOYAMA, K. MACHIDA, M. SHIMAYA AND H. KYURAGI, NTT, JAPAN 88 17:10
(4) OXIDE THICKNESS DEPENDENCE OF HOT CARRIER STRESS INDUCED DRAIN
LEAKAGE CURRENTDEGRA DATION IN THIN-OXIDE N-MOSFET S
T. WANG, N.K. ZOUS, L.Y. HUANG, C.K. YEN AND T.S. CHAO*, NATL. CHIAO
TUNG UNIV. AND *NATL. NANO DEVICES LAB., TAIWAN 9Q
17:30 (5) ENHANCED-MOBILITY DEEP SUBMICRON STRAINED-SI N-MOSFETS K. RIM,
J. L. HOYT AND J.F. GIBBONS, STANFORD UNIV., U.S.A 92
17:50 (6) PERFORMANCE CONSIDERATIONS IN USING HIGH-K DIELECTRICS FOR
DEEP SUB-MICRON MOSFETS A. INANI, V.R. RAO, B. CHENG, M. CAO*, P.V.
VOORDE*, W. GREENE* AND J.C.S. WOO, UNIV. CALIFORNIA AND
*HEWLETT-PACKARD LABS., U.S.A 94
SEPTEMBER 8, TUESDAY
ROOM A
LA: LATE NEWS (9:30-10:30)
9:30 (1) BURIED INSULATOR ENGINEERING FOR SUB-0.05//M FULLY-DEPLETED
SOI-MOSFET TO REDUCE THE DRAIN INDUCED BARRIER LOWERING
R. KOH, NEC, JAPAN 96
9:45 (2) A NOVEL SHALLOW TRENCH ISOLATION WITH MINI-SPACER TECHNOLOGY
W.K. YEH, T. LIN, C. CHEN AND S.W. SUN, UNITED MICROELECTRONICS, TAIWAN
98 10:00 (3) IMPROVEMENT OF SI02/4H-SIC INTERFACE BY USING HIGH
TEMPERATUREHYDROGEN ANNEALING AT 1000C
K. FUKUDA, K. NAGAI, T. SEKIGAWA, S. YOSHIDA, K. ARAI AND M. YOSHIKAWA*,
ETL AND *JAPAN ATOMIC ENERGY RES. INST., JAPAN 100
10:15 (4) ULTRA THIN SRBI2TA209 FERROELECTRIC FILMS GROWN BY LIQUID
SOURCE CVD USING BIOX BUFFER LAYERS H. YAMAWAKI, S. MIYAGAKI, T. ESHITA
ABD Y. ARIMOTO, FUJITSU LABS., JAPAN 102
A-3: THIN GATE DIELECTRICS (I) (10:40-12:00)
10:40 (1) MOSFETS WITH NM-THICK GATE SI02 GROWN AT LOW TEMPERATURES
UTILIZING ACTIVATED OXY GEN T. FUYUKI, T. FUTATSUYAMA*, Y. UEDA*, K.
MORIIZUMI* AND H. MATSUNAMI*, NARA INST. SCI. & TECHNOL. AND *KYOTO
UNIV., JAPAN 104
11:00 (2) ULTRATHIN NITRIDE/OXIDE (N/O) GATE DIELECTRICS FOR P+-POLY
GATED PMOSFETS PREPARED BY A COMBINED REMOTE PLASMA ENHANCED CVD/THERMAL
OXIDATION PROCESS Y. WU AND G. LUCOVSKY, NORTH CAROLINA STATE UNIV.,
U.S.A 106
11:20 (3) DUAL GATE OXIDE PROCESS INTEGRATION FOR HIGH PERFORMANCE
EMBEDDED MEMORY PRODUCTS H. OI, Y. SHIHO, P. CHEN AND N. BHAT, MOTOROLA,
U.S.A 108
11:40 (4) THE DEUTERIUM EFFECT ON SILC B.C. LIN, Y.C. CHENG, A. CHIN, T.
WANG AND C. TSAI, NATL. CHIAO TUNG UNIV., TAI WAN H
A-4: THIN GATE DIELECTRICS (II) (13:30-15:30)
13:30 (1) EVALUATION OF INTERFACE SIOX TRANSITION LAYER BY OSCILLATORY
TUNNELING CURRENT-VOLTAGE CHARACTERISTICS IN PHOTO-CVD SI02-SI DIODE O.
MAIDA, N. OKADA, T. KANASHIMA AND M. OKUYAMA, OSAKA UNIV., JAPAN I 2
XX
IMAGE 6
13:50 (2) DIFFERENCES BETWEEN THE ELECTRICAL PROPERTIES OF NITRIDED
SI-SI02 INTERFACES FORMED BY (A) POST-OXIDATION, REMOTE PLASMA-ASSISTED
NITRIDATION AND (B) REMOTE PLASMA-ASSISTED DEPOSITION H. NIIMI, G.
LUCOVSKY AND Y. WU, NORTH CAROLINA STATE UNIV., U.S.A 114
14:10 (3) ANALYSIS OF DIRECT TUNNELING FOR THIN SI02 FILM N. MATSUO, T.
MIURA, A. URAKAMI AND T. MIYOSHI, YAMAGUCHI UNIV., JAPAN 116 14:30 (4)
INTERFACIAL STRUCTURES OF SI02/SI T. YAMASAKI, C. KANETA, T. UCHIYAMA*,
T. UDA* AND K. TERAKURA**, FUJITSU LABS.,
*JRCAT-ATP AND **JRCAT-NAIR, JAPAN 118
14:50 (5) ATOMIC-SCALE STRUCTURE OF SIO2/SI(001) INTERFACE FORMED BY
FURNACE OXIDATION N. MIYATA, H. WATANABE* AND M. ICHIKAWA, JRCAT-ATP AND
*NEC, JAPAN 120 15:10 (6) INITIAL STAGE OF OXIDATION OF SI(001)-2XL
SURFACE STUDIED BY X-RAY PHOTOELECTRON SPEC
TROSCOPY Y. HARADA, M. NIWA, T. NAGATOMI* AND R. SHIMIZU*, MATSUSHITA
ELECTRONICS AND OSA KA UNIV., JAPAN 122
A-5: THIN GATE DIELECTRICS (III) (15:50-17:50)
15:50 (1) INFLUENCES OF IMPURITIES ON OXIDATION PROCESSES OF SI(LOO)
SUBSTRATES H. IKEDA, Y. NAKAGAWA, K. SATO, S. ZAIMA AND Y. YASUDA,
NAGOYA UNIV., JAPAN 124 16:10 (2) TIME EVOLUTION OF MEAN AND DISPERSION
IN SI/SI02 INTERFACE STATES GENERATION STATISTICS Y. MITANI, H. SATAKE
AND A. TORIUMI, TOSHIBA, JAPAN 126
16:30 (3) NON-DESTRUCTIVE CHARACTERIZATION OF ELECTRONIC PROPERTIES OF
PRE- AND POST-PROCESSING SILICON SURFACES BY UHV CONTACTLESS
CAPACITANCE-VOLTAGE METHOD T. YOSHIDA, T. HASHIZUME, H. HASEGAWA AND T.
SAKAI*, HOKKAIDO UNIV. AND *DAINIPPON SCREEN MFG., JAPAN 128
16:50 (4) STRUCTURAL ORIGIN OF CARRIER TRAP LEVELS AT SI02/SI INTERFACE
N. WATANABE, A. OMURA, H. NOHIRA AND T. HATTORI, MUSASHI INST. TECHNOL.,
JAPAN... 130 17:10 (5) INTERFACE STATES FOR SILICON OXIDE LAYERS FORMED
BY USE OF CATALYTIC ACTIVITY OF A PLATINUIM LAYER
T. YUASA, K. YAMANAKA, K. YONEDA*, Y. TODOKORO** AND H. KOBAYASHI, OSAKA
UNIV., MATSUSHITA ELECTRONICS AND **MATSUSHITA ELECTRIC, JAPAN 132
17:30 (6) CHARACTERIZATION OF THE INTERFACE BETWEEN PLASMA-OXIDIZED SI02
AND CRYSTALLINE SILICON BY CATHODOLUMINESCENCE SPECTROSCOPY (CLS) J.
SCHAFER, A.P. YOUNG, L.J. BRILLSON, H. NIIMI* AND G. LUCOVSKY*, OHIO
STATE UNIV.
AND *NORTH CAROLINA STATE UNIV., U.S.A 134
18:30-20:45 RUMP SESSION C: NONVOLATILE MEMORY; FLASH VS FERAM
ROOM B
B-3: FLASH MEMORY AND THIN OXIDE (9:30-11:50)
9:30 (1) RELIABILITY ISSUES OF FLOATING GATE FLASH MEMORY (INVITED) C.
CHANG, AMD, U.S.A 136
10:00 (2) GUIDE-LINES ON FLASH MEMORY CELL SELECTION (INVITED) K.
YOSHIKAWA, TOSHIBA, JAPAN 138
10:30 (3) NEW SELF-CONVERGENT PROGRAMMING METHOD FOR MULTI-LEVEL AND
FLASH MEMORY E.C.-S. YANG, W.-J. WONG, R.S.-J. SHEN, Y.-S. WANG AND
C.C.-H. HSU, NATL. TSING HUA UNIV., TAIWAN 140
10:50 (4) HIGH-PERFORMANCE EEPROMS USING N- AND P-CHANNEL POLY-SI TFTS
WITH ECR N20 PLASMA OXIDE N.-I. LEE, J.-W. LEE*, H.-S. KIM AND C.-H.
HAN*, SAMSUNG AND *KAIST, KOREA 142
11:10 (5) CHARACTERISTICSAND CORRELATED FLUCTUATIONS OF THE GATE AND
SUBSTRATECURRENT AFTER OXIDE SOFT-BREAKDOWN F. CRUPI, R. DEGRAEVE*, G.
GROESENEKEN*. T. NIGAM* AND H.E. MAES*, UNIV. PISA, ITA
LY AND *IMEC, BELGIUM
144
11:30 (6) EXPERIMENTAL STUDY OF THE SOFT BREAKDOWN I-V CHARACTERISTICS
IN ULTRATHIN SI02 LAYERS E. MIRANDA, J. SUNE, R. RODRIGUEZ, M. NAFRIA,
F. MARTIN AND X. AYMERICH, UNIV. AUTO
NOMY BARCELONA, SPAIN 146
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B-4: SYMPOSIUM ON SUB O.L^M CMOS PROCESS/DEVICE INTEGRATION (I)
(13:30-15:30)
13:30 NANIMPRINT LITHOGRAPHY (INVITED) S.Y. CHOU, PRINCETON UNIV., U.S.A
148
14:00 (2) SURFACE PREPARATION, GROWTH, AND INTERFACE CONTROL OF
ULTRATHIN GATE OXIDES (INVITED) Y. NISHIOKA, K. NAMBA, M. MATSUMURA, T.
SAKODA, Y. KUMAGAI, T. KOMEDA, H. KOBAYASHI*, T. HOSHINO**, A. ANDO***
AND K. MIKI***, TEXAS INSTRUMENTS, TSUKUBA R&D CTR., *OSAKA UNIV.,
**CHIBA UNIV AND ***ETL, JAPAN 150
14:30 (3) FORMATION OF SILICON OXYNITRIDE FILMS WITH HIGH NITROGEN
CONCENTRATION AT LOW TEMPER ATURES
T. MIZOKURO, K. YONEDA*, Y. TODOKORO** AND H. KOBAYASHI, OSAKA UNIV.,
MATSUSHI TA ELECTRONICS AND **MATSUSHITA ELECTRIC, JAPAN 152
14:50 (4) PLASMA DAMAGE FREE GATE PROCESS USING CMP FOR 0.1URN MOSFETS
T. SAITO, A. YAGISHITA, S. INUMIYA, K. NAKAJIMA, Y. AKASAKA, Y. OZAWA,
H. YANO, K. HIEDA, K. SUGURO, T. ARIKADO AND K. OKUMURA, TOSHIBA, JAPAN
154
15:10 (5) THROUGH-THE-GATE IMPLANTED (TGI) CMOS TECHNOLOGY WITH ADVANCED
SHALLOW TRENCH ISOLATION
U. SCHWALKE, M. FULDNER, W. ZATSCH, K. BOTHE, D. HADAWI, I. JANSSEN AND
P. SCHON, SIEMENS, GERMANY 156
B-5: SYMPOSIUM ON SUB O.LFAN CMOS PROCESS/DEVICE INTEGRATION (II)
(15:50-17:50)
15:50 (1) SCALNING TO A 1.0V-1.5V, SUB O.LUM GATE LENGTH CMOS
TECHNOLOGY: PERSPECTIVE AND CHALLANGES (INVITED) M. RODDER, I.-C. CHEN,
S. HATTANGADY AND J.C. HU, TEXAS INSTRUMENTS, U.S.A 158
16:20 (2) ULTRA-LOW ENERGY ION IMPLANTATION FOR 0.1 MICRON CMOS DEVICES
(INVITED) (WITHDRAWN) D.G. ARMOUR, APPLIED MATERIAL, U.S.A 160
16:50 (3) IMPROVED TI SALICIDE TECHNOLOGY USING HIGH DOSE GE
PRE-AMORPHIZATION FOR O.LOUM CMOS AND BEYOND K. OHUCHI, K. MIYASHITA, H.
YOSHIMURA, A. MURAKOSHI, K. SUGURO AND Y. TOYOSHIMA, TOSHIBA, JAPAN 162
17:10 (4) IMPROVEMENT OF ULTRA-THIN 3.3NM THICK OXIDE FOR CO-SALICIDE
PROCESS USING NF3 AN NEALED POLY-SI GATE T.Y. CHANG, T.F. LEI, T.S.
CHAO*, H.C. LIN*, T.Y. HUANG*, S.K. CHEN**, A. TUAN** AND S. CHOU***,
NATL. CHIAO TUNG UNIV., *NATL. NANO. DEVICE LAB., **AIR PRODUCTS
ASIA AND ***SAN FU, TAIWAN 164
17:30 (5) BANDGAP ENGINEERING FOR THE SUPPRESSION OF THE SHORT CHANNEL
EFFECT OF SUB-O.LUM PCHANNEL MOSFETS
A. NISHIYAMA, K. MATSUZAWA AND S. TAKAGI, TOSHIBA, JAPAN 166
18:30-20:45 RUMP SESSION B: GHZ DEVICES, III-V OR SI ?
ROOM C
C-3: SYMPOSIUM ON FABRICATION, CHARACTERIZATION AND DEVICE APPLICATION
OF QUANTUM NANOSTRUCTURES(III) (9:30-11:45)
9:30 (1) NANO-CRYSTAL AND QUANTUM DOT MEMORIES: DEVICE PROPERTIES
(INVITED) S. TIWARI, J.J. WELSER, F. RANA AND A. KUMAR, IBM, U.S.A 168
10:00 (2) SILICON NANO-CRYSTAL MEMORY WITH TUNNELING NITRIDE I. KIM, H.
KIM*, J. LEE** AND H. SHIN, KAIST, *LG SEMICON AND **WONKWANG UNIV.,
KOREA I70
10:15 (3) CHARACTERISTICS OF NARROW CHANNEL MOSFET MEMORY BASED ON
SILICON NANOCRYSTALS Y. SHI, K. SAITO, H. ISHIKURO AND T. HIRAMOTO,
UNIV. TOKYO, JAPAN I72
10:30 (4) SINGLE ELECTRON CHARGING TO A SI QUANTUM DOT FLOATING GATE IN
MOS STRUCTURES A. KOHNO, H. MURAKAMI, M. IKEDA, H. NISHIYAMA, S.
MIYAZAKI AND M. HIROSE, HIROSHIMA UNIV., JAPAN 17 *
XXLL
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10:45 (5) A SI MEMORY DEVICE COMPOSED OF A ID-WIRE MOSFET SWITCH AND A
SINGLE-ELECTRONTRANSISTOR DETECTOR Y. TAKAHASHI, A. FUJIWARA, K.
YAMAZAKI, H. NAMATSU, K. KURIHARA AND K. MURASE, NTT, JAPAN 176
11:00 (6) SI IN-PLANE FLOATING-DOT MEMORY WITH A SINGLE ELECTRON
TRANSISTOR T. SAKAMOTO, H. KAWAURA AND T. BABA, NEC, JAPAN 178
11:15 (7) HIGH SPEED SILICON SINGLE-ELECTRON RANDOM ACCESS MEMORY WITH
LONG RETENTION TIME N.J. STONE AND H. AHMED, UNIV. CAMBRIDGE, U.K 180
11:30 (8) EFFECTS OF ELECTRON TUNNELING INTO A SINGLE-CRYSTALLINE SI
LAYER THROUGH AN ULTRATHTN BU RIED OXIDE
Y. ISHIKAWA, S. MAKITA, J. ZHANG, T. TSUCHIYA* AND M. TABE, SHIZUOKA
UNIV. AND SHIMANE UNIV., JAPAN 182
LC: LATE NEWS (11:45-12:00)
11:45 (1) SINGLE HOLE TUNNELLING IN SIDE-GATED SIGE QUANTUM DOTS S.
KANJANACHUCHAI, J.M. BONAR*, G.J. PARKER* AND H. AHMED, UNIV. CAMBRIDGE
AND *UNIV. SOUTHAMPTON, U.K 184
C-4: SYMPOSIUM ON FABRICATION, CHARACTERIZATION AND DEVICE APPLICATION
OF QUANTUM NANOSTRUCTURES (IV) (13:30-15:30)
13:30 (1) A 128MB SINGLE-ELECTRON MEMORY (INVITED) K. YANO, T. ISHII, T.
SANO*, T. MINE, F. MURAI, T. KURE AND K. SEKI, HITACHI AND HITACHI
DEVICE ENG., JAPAN 186
14:00 (2) ROOM TEMPERATURE OPERATING CMOS-LIKE LOGIC CIRCUITS WITH
SINGLE ELECTRON TUNNELING DEVICES
K. UCHIDA, K. MATSUZAWA AND A. TORIUMI, TOSHIBA, JAPAN 188
14:15 (3) A STOCHASTIC ASSOCIATIVE MEMORY USING SINGLE-ELECTRON DEVICES
AND ITS APPLICATION TO DIGIT PATTERN ASSOCIATION
T. YAMANAKA, T. MORIE, M. NAGATA AND A. IWATA, HIROSHIMA UNIV., JAPAN
190 14:30 (4) ANALOG COMPUTATION USING QUANTUM-DOT SPIN GLASS N.-J. WU,
H. LEE*, Y. AMEMIYA* AND H. YASUNAGA, UNIV. ELECTRO-COMMUNICATIONS
AND *HOKKAIDO UNIV., JAPAN 192
14:45 (5) SIGNAL TRANSMISSION CIRCUIT USING SINGLE ELECTRON TUNNELING
JUNCTIONS K. YAMAMURA AND Y. SUDA, TOKYO UNIV. A&T, JAPAN 194
15:00 (6) MACRO-MODELING OF SINGLE ELECTRON TRANSISTORS FOR EFFICIENT
CIRCUIT SIMULATION Y.S. YU, H.S. LEE AND S.W. HWANG, KOREA UNIV., KOREA
196
15:15 (7) THEORY OF COLLECTIVE BEHAVIOR AND SINGLE ELECTRON PROCESSES IN
COUPLED NANOWIRE ARRAYS A.J. BENNETT AND J.M. XU, UNIV. TORONTO, CANADA
198
C-5: SYMPOSIUM ON FABRICATION, CHARACTERIZATION AND DEVICE APPLICATION
OF QUANTUM NANOSTRUCTURES (V) (15:50-17:50)
15:50 (1) SCANNING SINGLE ELECTRON TRANSISTOR MICROSCOPY: IMAGING
INDIVIDUAL CHARGES (INVITED) M.J. YOO, T.A. FULTON, H.F. HESS, R.L.
WILLETT, L.N. DUNKLEBERGER, R.J. CHICHESTER, L.N. PFEIFFER AND K.W.
WEST, LUCENT TECHNOL., U.S.A 200
16:20 (2) ROOM TEMPERATURE COULOMB OSCILLATION FOR SINGLE ELECTRON
TRANSISTOR ON ATOMICALLY FLAT TI/A-AL203 SUBSTRATE MADE BY PULSE-MODE
AFM NANO-OXIDATION PROCESS K. MATSUMOTO, Y. GOTOH, T. MAEDA, J.A.
DAGATA* AND J. S. HARRIS**, ETL, JAPAN, NATL. INST. STANDARDS & TECHNOL.
AND **STANFORD UNIV., U.S.A 202
16:35 (3) OBSERVATION OF COULOMB BLOCKADE IN RESISDVELY COUPLED SINGLE
ELECTRON TRANSISTOR Y. PASHKIN, Y. NAKAMURA* AND J.-S. TSAI*, JAPAN SCI.
& TECHNOL. AND *NEC, JAPAN... 204 16:50 (4) TRANSPORT PROPERTIES OF
RESISTIVELY-COUPLED SINGLE-ELECTRON TRANSISTOR F. WAKAYA, K. KITAMURA,
S. IWABUCHI* AND K. GAMO, OSAKA UNIV. AND *NARA
WOMEN S UNIV., JAPAN 206
17:05 (5) CHARACTERIZATION OF SMALL SUPERCONDUCTING RINGS AND ITS
POSSIBLE APPLICATION TO NEW SIN GLE FLUX QUANTUM DEVICES
A. KANDA, M.C. GEISLER, M. SUZUKI*, K. ISHIBASHI, Y. AOYAGI AND T.
SUGANO, INST. PHYSICAL & CHEMICAL RES. AND *TOYO UNIV., JAPAN 208
XXUI
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17:20 (6) POLYCRYSTALLINE SILICON SINGLE-ELECTRON TRANSISTOR WITH
GATE-DEPENDENT TWO-PERIOD CUR RENT OSCILLATIONS
Z.A.K. DURRANI, A.I. IRVINE, H. AHMED AND S. BIESEMANS*, UNIV.
CAMBRIDGE, U.K. AND *IMEC, BELGIUM 210
17:35 (7) MERITS AND DEMERITS OF SINGLE ELECTRON EFFECTS IN ULTRA-SMALL
SEMICONDUCTOR DEVICES A. OHATA AND A. TORIUMI*, INST. PHYSICAL &
CHEMICAL RES. AND *TOSHIBA, JAPAN 212
18:30-20:45 RUMP SESSION A: FUTURE SI SUBSTRATES - 300 MM^/LARGER
DIAMETER OR BALL SI ? -
ROOM D
D-3: FERROELECTRIC MATERIALS AND DEVICES (9:30-12:00)
9:30 (1) DEVICE PHYSICS FERROELECTRIC THIN FILM MEMORIES (INVITED) J.F.
SCOTT, A.J. HARTMANN, K. WATANABE, A. PIGNOLET*, N.D. ZAKHAROV*, M.
ALEXE* ANDD. HESSE*, UNIV. OF NEW SOUTH WALES, AUSTRALIA AND *MAX PLANCK
INST., GERMANY. ..214 10:00 (2) LOW VOLTAGE OPERATION OF FERROELECTRIC
SR0.9BI2.,TA2O9THIN FILMS CRYSTALLIZED BY EXCIMER
LASER ANNEALING I. KOIWA, K. SANO*, T. KANEHARA AND H. KATO, OKI AND
*JAPAN STEEL WORKS, JAPAN.. .216
10:20 (3) A FATIGUE-TOLERANT MFOS STRUCTURE WITH LARGE MEMORY WINDOW OF
3.6V USING SRDEFICIENT AND BI-EXCESS SBTO FERROELECTRIC FILM PREPARED ON
SI02/SI AT LOW TEMPERA TURE BY PLD METHOD M. NODA, H. SUGIYAMA, Y.
MATSUMURO AND M. OKUYAMA, OSAKA UNIV., JAPAN 218 10:40 (4) PREPARATION
OF BI4TI30,2 THIN FILMS BY MOCVD METHOD AND ELECTRICAL PROPERTIES OF
MFIS STRUCTURE T. KIJIMA AND H. MATSUNAGA, SHARP, JAPAN 220
11:00 (5) PROPOSAL OF A NOVEL FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR
WITH SEPARATED FUNCTIONS FOR DATA READ-OUT AND DATA STORAGE H. ISHIWARA,
TOKYO INST. TECHNOL., JAPAN 222
11:20 (6) PROPERTIES OF FERROELECTRIC MEMORY FET USING SR2(TA,NB)207
THIN FILM Y. FUJIMORI, N. IZUMI, T. NAKAMURA AND A. KAMISAWA, ROHM,
JAPAN 224 11:40 (7) REALIZATION OF ADAPTIVE LEARNING FUNCTION FOR NEURON
OSCILLATION CIRCUIT USING METALFERROELECTRIC-SEMICONDUCTOR(MFS) FET
S.-M. YOON, E. TOKUMITSU AND H. ISHIWARA, TOKYO INST. TECHNOL., JAPAN
226
D-4: GROWTH AND CHARACTERIZATION OF COMPOUND MATERIALS (I) (13:30-15:45)
13:30 (1) SILICON COMPLIANT SUBSTRATE FOR HIGH-QUALITY HETEROEPITAXIAL
GROWTH (INVITED) Y.-H. LO, Z.-H. ZHU, CORNELL UNIV., U.S.A 228
14:00 (2) NITRIDATION OF GAAS(OOL) SURFACE STUDIED BY AUGER ELECTRON
SPECTROSCOPY I. AKSENOV, Y. NAKADA* AND H. OKUMURA**, JRCAT-ATP,
*MITSUBISHI MATERIALS AND
**ETL, JAPAN : 230
14:15 (3) GROWTH OF SELF-ORGANIZED ZNSE QUANTUM DOTS BY MOVPE T. TAWARA
AND I. SUEMUNE, HOKKAIDO UNIV., JAPAN 232
14:30 (4) SUPERLATTICE CYCLE (P) DEPENDENCE OF THE QUANTUM DOT
STRUCTURES SELF-FORMED IN {(GAP) N(INP)M}P SUPERLATTICES GROWN ON GAAS
(311)A SUBSTRATES J.H. NOH, H. ASAHI, M. FUDETA, S.J. KIM, K. ASAMI AND
S. GONDA, OSAKA UNIV., JAPAN 234
14:45 (5) EXCITONIC LUMINESCENCE FROM SELF-ORGANIZED QUANTUM DOTS OF
CDTE GROWN BY MOLECU LAR BEAM EPITAXY S. KURODA, Y. TERAI, K. TAKITA,
T. OKUNO AND Y. MATSUMOTO, UNIV. TSUKUBA, JAPAN.. .236 15:00 (6) DIGITAL
ETCHING OF INP USING TRIS-DIMETHYLAMINOPHOSPHORUS IN ULTRA-HIGH VACUUM
N. OTSUKA, J. NISHIZAWA*, Y. OYAMA**, H. KIKUCHI* AND K. SUTO**,
TELECOMM. ADVAN CEMENT ORGANIZATION, *SEMICONDUCTOR RES. FOUNDATION AND
**TOHOKU UNIV, JAPAN .. .238 15:15 (7) ELECTROLUMINESCENT PROPERTIES OF
ZNXMG,.XS:MN THIN FILMS R. INOUE, T. NISHIGAKI, M. KITAGAWA, S. KINBA,
K. ICHINO AND H. KOBAYASHI, TOTTORI
UNIV., JAPAN 240
XXIV
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15:30 (8) OPTIMIZATION PROCESS IN THE P-TYPE ACTIVATION AND ITS
RELATIONSHIP WITH THE DEFECTS STRUC TURE IN MG-DOPED P-GAN D.-H. YOUN,
M. LACHAB, M. HAO, T. SUGAHARA, K. YAMASHITA, Y. NAOI AND S. SAKAI,
UNIV. TOKUSHIMA, JAPAN 242
D-5: GROWTH AND CHARACTERIZATION OF COMPOUND MATERIALS (II)
(16:05-18:05)
16:05 (1) SURFACE STOICHIOMETRY AND EVOLUTION OF CRYSTAL FACET DURING
SELECTIVE AREA MOVPE (INVITED)
N. KOBAYASHI, S. ANDO, T. NISHIDA, Y. KOBAYASHI AND T. AKASAKA, NTT,
JAPAN 244 16:35 (2) IN-SITU UHV STUDY ON CORRELATION BETWEEN MICROSCOPIC
SURFACE STRUCTURES AND MACRO SCOPIC ELECTRONIC PROPERTIES IN SI
INTERLAYER-BASED SURFACE PASSIVATION OF GAAS M. MUTOH, N. TSURUMI, T.
HASHIZUME AND H. HASEGAWA, HOKKAIDO UNIV., JAPAN 246 16:50 (3) STUDY ON
SURFACE POLARITYOF GAN BY DENSITY FUNCTIONAL THEORYAND MOLECULAR
DYNAMICS
T. ONOZU, I. GUNJI, R. MIURA, S.S.C. AMMAL, M. KUBO, K. TERAISHI, A.
MIYAMOTO, Y. IYECHIKA* AND T. MAEDA*, TOHOKU UNIV. AND *SUMITOMO
CHEMICAL, JAPAN 248 17:05 (4) BAND OFFSET ANALYSIS OF GANAS/GAAS BY
X-RAY PHOTOELECTRON SPECTROSCOPY T. KITATANI, M. KONDOW, T. KIKAWA*, Y.
YAZAWA*, M. OKAI* AND K. UOMI*, RWCP
OPTICAL INTERCONNECTION HITACHI LAB. AND HITACHI, JAPAN 250
17:20 (5) CARRIER MOBILITY DEPENDENCE OF ELECTRON SPIN RELAXATION IN
GAAS MQWS R. TERAUCHI, Y. OHNO, T. ADACHI, A. SATO, F. MATSUKURA, A.
TACKEUCHI* AND H. OHNO, TOHOKU UNIV. AND *WASEDA UNIV., JAPAN 252
17:35 (6) LOW-TEMPERATURE PHOTOCURRENT MEASUREMENTS OF ASYMMETRIC
DOUBLE-WELL GAAS/ALAS SUPERLATTICES WITH LAYER SEQUENCE INVERSION
M. TAKEUCHI, K. KAWASHIMA AND K. FUJIWARA, KYUSHU INST. TECHNOL., JAPAN
254 17:50 (7) INTERPLAY OF EXCITONIC RADIATIVE RECOMBINATION AND
IONIZATION IN PHOTOCURRENT SPECTRA OF THICK BARRIER GAAS/ALAS MULTIPLE
QUANTUM WELLS
K. KAWASAKI, M. IMAZAWA, K. KAWASHIMA, K. FUJIWARA, M. HOSODA* AND K.
TOMINAGA*, KYUSHU INST. TECHNOL. AND *ATR, JAPAN 256
18:30-20:45 RUMP SESSION D: IS SINGLE ELECTRONICS FOR REAL?
SEPTEMBER 9, WEDNESDAY
ROOM A
A-6: SYMPOSIUM ON ADVANCED METALLIZATION TECHNOLOGY (I) (9:30-11:50)
9:30 (1) COPPER INTERCONNECTS FOR ADVANCED LOGIC AND DRAM (INVITED) J.G.
RYAN, G.B. BRONNER, J.P. HUMMEL AND T.N. THEIS, IBM, U.S.A 258 10:00 (2)
WSIN DIFFUSION BARRIER FORMED BY ECR PLASMA NITRIDATION FORCOPPER
DAMASCENE INTER CONNECTION
A. HIRATA, K. MACHIDA, N. AWAYA, H. KYURAGI AND M. MAEDA, NTT, JAPAN 260
10:20 (3) THIN AND LOW-RESISTIVITY TANTALUM NITRIDE DIFFUSION BARRIER
AND GIANT-GRAIN COPPER IN TERCONNECTS FOR ADVANCED ULSI METALLIZATION
S. NAKAO, M. NUMATA AND T. OHMI, TOHOKU UNIV., JAPAN 262
10:40 (4) FLUOROPOLYMER AND AEROGEL THIN FILMS AS LOW DIELECTION IN IC
METALLIZATION (INVITED) S.E. SCHULZ, A. BERTZ, R. STREITER, M. UHLIG, U.
WEISS, T. WERNER, T. WINKLER AND T. GESSNER, TU CHEMNITZ, GERMANY 264
11:10 (5) A FLUORINATED ORGANIC-SILICA FILM WITH EXTREMELY LOW
DIELECTRIC-CONSTANT Y. UCHIDA, K. TAGUCHI AND M. MATSUMURA*, TEIKYO
UNIV. SCI. & TECHNOL. AND *TOKYO INST. TECHNOL., JAPAN 266
11:30 (6) THERMAL AND BIAS-TEMPERATURE STRESS INDUCED LEAKAGE CURRENT
FAILURE OF CU/BCB SIN GLE DAMASCENE INTEGRATION
S.U. KIM, SEMATECH, U.S.A 268
XXV
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A-7: SYMPOSIUM ON ADVANCED METALLIZATION TECHNOLOGY (II) (13:30-17:00)
13:30 (1) SALICIDE TECHNOLOGIES FOR DEEP-SUB-MICRON-CMOS (INVITED) J.A.
KITTL, M.A. GRIBELYUK, D. MILES, C.-P. CHAO, M. RODDER, Q.-Z. HONG, H.
YANG, S. HATTANGADY AND N. YU, TEXAS INSTRUMENTS, U.S.A 270
14:00 (2) TRANSMISSION ELECTRON MICROSCOPIC STUDY OF TISI2
MICROSTRUCTURES AND THEC49-C54 PHASE
TRANSFORMATION IN NARROW LINES M. OKIHARA, K. TAI, M. KAGEYAMA, Y.
HARADA, N. HIRASHITA AND H. ONODA, OKI, JAPAN 272
14:20 (3) LOW CONTACT RESISTANCE POLY-METAL GATE CMOS USING TIN/THIN
TISI2/POLY-SI STRUCTURE
F. OHTAKE AND Y. NARA, FUJITSU LABS., JAPAN 274
14:40 (4) A NOVEL CLEAN TI SALICIDE PROCESS USING GROOVED GATE STRUCTURE
K. HIZAWA, H. MATSUHASHI AND S. NISHIKAWA, OKI, JAPAN 276
15:00 (5) HIGHLY UNIFORM DEPOSITION OF LP-CVD 3I3N4 FILMS ON TUNGSTEN
FOR ADVANCED LOW
RESISTIVITY POLY-METAL GATE INTERCONNECTS
Y. AKASAKA, K. MIYANO, K. NAKAJIMA AND K. SUGURO, TOSHIBA, JAPAN 278
15:40 (6) MULTILEVEL ALUMINUM DUAL-DAMASCENE INTERCONNECTS (AL-DDI) FOR
PROCESS-STEP REDUC TION IN 0.18UM-ULSIS
K. SHIBA, H. WAKABAYASHI, T. TAKEWAKI, K. KIKUTA, A. KUBO, S. YAMASAKI
AND Y. HAYASHI, NEC, JAPAN 280
16:00 (7) POST-METAL-CMP CLEANING USING OXALIC ACID H. AOKI, S. YAMASAKI
AND N. AOTO, NEC, JAPAN 282
16:20 (8) ULTRA-LOW RESSITANCE, THROUGH-WAFER VIA (TWV) TECHNOLOGY AND
ITS APPLICATIONS IN
THREE DIMENSIONAL STRUCTURES ON SILICON H.T. SOH, C.P. YUE, A.M.
MCCARTHY*, C. RYU, T.H. LEE AND C.F. QUATE, STANFORD UNIV. AND *LAWRENCE
LIVERMORE NATL. LAB., U.S.A 284
16:40 (9) A NEW WAFER-SCALE CHIP-ON-CHIP (W-COC) PACKAGING TECHNOLOGY
USING ADHESIVE INJEC
TION METHOD
K. SAKUMA, K.W. LEE, T. NAKAMURA, H. KURINO AND M. KOYANAGI, TOHOKU
UNIV., JAPAN 286
A-8: ISOLATION (17:05-18:15)
17:05 (1) ON SHALLOW TRENCH ISOLATION FOR DEEP SUBMISSION CMOS
TECHNOLOGIES (INVITED) A. CHATTERJEE, M. NANDAKUMAR, S. ASHBURN, V.
GUPTA, S.P. KWOK AND I.-C. CHEN, TEXAS INSTRUMENTS, U.S.A 288
17:35 (2) A MANUFACTURABLE HDP OXIDE FILLED STI PROCESS WITH SIN LINER
FOR THE DEEP SUBMICRON INTER-WELL ISOLATION H.S. LEE, S.J. KIM, T. PARK,
J.H. CHOI, K.W. PARK, B.K. HWANG Y.G. SHIN, H.K. KANG, Z. LI*, Y. LEE*
AND F. MOGHADAM*, SAMSUNG, KOREA AND *APPLIED MATERI
ALS, U.S.A
290
17:55 (3) SUPPRESSION OF TRANSIENT ENHANCED DIFFUSION BY LOCOS INDUCED
STRESS M. OKUNO, T. AOYAMA, S. NAKAMURA, H. ARIMOTO AND K. HORIUCHI,
FUJITSU LABS., JAPAN 292
ROOM B
B-6: SYMPOSIUM ON SOI TECHNOLOGIES-SCIENCE TO MANUFACTURING- (I)
(9:30-11:40)
9:30 (1) SILICON-ON-INSULATOR MATERIAL FOR DEEP SUBMISSION TECHNOLOGIES
(INVITED) W.P. MASZARA, SEMATECH, U.S.A 294
10:00 (2) ANALYSIS OF BURIED-OXIDE DIELECTRIC BREAKDOWN MECHANISM IN
LOW-DOSE SIMOX STRUC TURES
K. KAWAMURA, T. YANO, I. HAMAGUCHI, S. TAKAYAMA, Y. NAGATAKE ANDA.
MATSUMURA, NIPPON STEEL, JAPAN 296
10:20 (3) EXTREMELY LOW SI ETCHING ( LNM) DURING HYDROGEN ANNEALING OF
SILICON-ON-INSULATOR N. SATO, M. ITO, J. NAKAYAMA AND T. YONEHARA,
CANON, JAPAN 298
10:40 (4) OXYGEN PRECIPITATES AND RELATED DEFECTS IN SOI SUBSTRATE
FABRICATED BY WAFER BONDING AND H+ SPLITTING A. OGURA AND M. TAJIMA*,
NEC AND *INST. SPACE & ASTRONAUTICAL SCI., JAPAN 300
XXVI
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11:0{J (5) DEFECT ENGINEERING IN EPITAXIAL LAYERS OVER POROUS SILICON
FOR ELTRAN SOI WAFERS N. SATO, S. ISHII, S. MATSUMURA, M. ITO, J.
NAKAYAMA AND T. YONEHARA, CANON, JAPAN 302
11:20 (6) STUDY OF HF DEFECTS IN THIN BONDED SOI DEPENDENT ON ORIGINAL
WAFERS H. AGA, M. NAKANO AND K. MITANI, SHIN-ETSU HANDOTAI, JAPAN 304
B-7: SYMPOSIUM ON SOI TECHNOLOGIES - SCIENCE TO MANUFACTURING- (II)
(13:30-15:20)
13:30 (1) BC(BODY-CONTACTED) SOI-CMOS TECHNOLOGY AND ITS APPLICATION TO
HIGH DENSITY MEMO RY (INVITED) Y.-H. KOH, J.-W. LEE, M.-R. OH AND J.-H.
OH, HYUNDAI ELEC. IND., KOREA 306
14:00 (2) SUB 1-V MTCMOS/SIMOX CIRCUIT TECHNOLOGY (INVITED) T. DOUSEKI
AND J. YAMADA, NTT, JAPAN 308
14:30 (3) DTMOS: ITS DERIVATIVES AND VARIATIONS, AND THEIR POTENTIAL
APPLICATIONS (INVITED) F. ASSADERAGHI, IBM, U.S.A 310
15:00 (4) HIGH PERFORMANCE ACCUMULATED BACK-INTERFACE DYNAMIC THRESHOLD
SOI MOS-FET S (AB-DTMOS) WITH LARGE BODY EFFECT AT LOW SUPPLY VOLTAGE M.
TAKAMIYA, T. SARAYA, T.N. DUYET, Y. YASUDA AND T. HIRAMOTO, UNIV. TOKYO,
JAPAN 312
B-8: SYMPOSIUM ON SOI TECHNOLOGIES-SCIENCE TO MANUFACTURING- (III)
(15:40-17:20)
15:40 (1) ANALYSIES OF THE RADIATION CAUSED CHARACTERISTICS CHANGE IN
SOI MOSFETS USING FIELD SHIELD ISOLATION
Y. HIRANO, S. MAEDA, W. FERNANDEZ, T. IWAMATSU, Y. YAMAGUCHI, S. MAEGAWA
AND T. NISHIMURA, MITSUBISHI, JAPAN 314
16:00 (2) DISTORTION ANALYSIS OF SOI MOSFETS FOR ANALOG APPLICATIONS
Y.-C. TSENG, W.M. HUANG*, D.C. DIAZ* AND J.C.S. WOO, UNIV. CALIFORNIA
AND MOTO ROLA U.S.A 316
16:20 (3) THE OFF-STATE LEAKAGE CURRENT IN ULTRA-THIN SOI MOSFET S A.O.
ADAN, Y. FUKUSHIMA, K. HIGASHI, SHARP, JAPAN 318
16:40 (4) FABRICATION OF 40-150NM GATE LENGTH ULTRATHIN N-MOSFETS USING
ELTRAN SOI WAFERS E. SUZUKI, K. ISHII, S. KANEMARU, T. MAEDA, T.
TSUTSUMI, K. NAGAI, T. SEKIGAWA AND H. HIROSHIMA, ETL, JAPAN 320
17:00 (5) MEASUREMENT OF ENERGETIC AND LATERAL DISTRIBUTION OF INTERFACE
STATE DENSITY IN FD SOI MOSFETS T.N. DUYET, H. ISHIKURO, Y. SHI, T.
SARAYA, M. TAKAMIYA AND T. HIRAMOTO, UNIV. TOKYO, JAPAN 322
LB: LATE NEWS (17:30-18:30)
17:30 (1) QUANTUM DOTS INFRARED PHOTODETECTOR USING MODULATION DOPED
INAS SELF-ASSEMBLED QUANTUM DOTS N. HORIGUCHI, T. FUTATSUGI, Y. NAKATA,
N. YOKOYAMA, T. MANKADO* AND P.M. PETROFF*, FUJITSU LABS., JAPAN AND
*UNIV. CALIFORNIA, SANTA BARBARA, U.S.A. .. .324
17:40 (2) APPLICATION OF NOVEL DOUBLE-SCHOTTKY-JUNCTION ALGAAS/INAS/GAAS
HETEROSTRUCTURES FOR THERMIONIC-EMITTER HOT-ELECTRON TRANSISTORS
H. YAMAGUCHI AND Y. HIRAYAMA, NTT, JAPAN 326
17:50 (3) DOPED CHANNEL HFET WITH EFFECTIVE LATERAL ENERGY MODULATION
FORHIGH POWER ENHAN CEMENT OPERATION M. INAI, H. SASAKI, T. KATAMATA,
H. SETO, F. OKUI AND S. FUKUDA, MURATA MFG., JAPAN 328
18:00 (4) CHARACTERIZATION OF POTENTIAL MODULATION IN NOVEL LATERAL
SURFACE SUPERLATTICES FORMED ON GAAS MULTIATOMIC STEPS K. YAMATANI, M.
AKABORI, J. MOTOHISA AND T. FUKUI, HOKKAIDO UNIV., JAPAN 330
18:10 (5) EPITAXIAL GROWTH OF AGGASE2 FOR MID-INFRARED FREQUENCY
DOUBLING APPLICATIONS Y. LACROIX, P. FONS, S. NIKI AND A. YAMADA, ETL,
JAPAN 332
XXVU
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ROOM C
C-6: OPTOELECTRONICS DEVICES AND MATERIALS (9:30-11:45)
9:30 (1) WIDELY TUNABLE VCSEL USING MICROMECHANICAL STRUCTURES (INVITED)
C.J. CHANG-HASNAIN, UNIV. CALIFORNIA, BERKELEY, U.S.A 334
10:00 (2) RELAXATION OSCILLATION DYNAMICS IN ALGALNP DIODE LASERS A.P.
HEBERLE AND S. NAKATSUKA, HITACHI, JAPAN 336
10:15 (3) A PROPOSAL OF LINEAR ANALOG MODULATOR USING TWIN MQW
ELECTROABSORPTION MODULATOR M. SHIN AND S. HONG, KAIST, KOREA 338
10:30 (4) QUANTUM EFFICIENCY OF INP/INGAAS UNI-TRAVELING-CARRIER
PHOTODIODES AT 1.55-1.7 URN MEASURED USING SUPERCONTINUUM GENERATION IN
OPTICAL FIBER N. SHIMIZU, K. MORI, T. ISHIBASHI AND Y. YAMABAYASHI, NTT,
JAPAN 340
10:45 (5) ELECTROLUMINESCENCE IN UNDOPED GAAS/ALAS SUPERLATTICES DUE TO
AVALANCHE BREAKDOWN C. DOMOTO, N. OHTANI, K. KUROYANAGI, P.O. VACCARO
AND N. EGAMI, ATR, JAPAN 342 11:00 (6) GATE LENGTH DEPENDENCE OF OPTICAL
CHARACTERISTICS IN OPTICALLY CONTROLLED MOSFET T. YAMAGATA, Y. NITTA AND
K. SHIMOMURA, SOPHIA UNIV., JAPAN 344
11:15 (7) FREQUENCY TUNING OF PHOTO-INDUCED OSCILLATIONS IN
MULTIPLE-QUANTUM-WELLS PIN DIODES O.-K. KWON, K.-S. LEE, H.Y. CHU, E.-H.
LEE AND B.-T. ANN*, ETRI AND *KAIST, KOREA 346
11:30 (8) OPTOELECTRONIC FLEXIBLE-FUNCTION LOGIC GATE USING
MONOSTABLE-BISTABLE TRANSITION OF SERIALLY CONNECTED RESONANT TUNNELING
TRANSISTORS
Y. OHNO, S. KISHIMOTO, T. MIZUTANI AND T. AKEYOSHI*, NAGOYA UNIV. AND
*NTT, JAPAN 348
C-7: SYMPOSIUM ON WIDEGAP ELECTRONICS AND OPTOELECTRONICS (I)
(13:30-15:45)
13:30 (1) GROWTH OF WIDE GAP II-VI MATERIALS, ITS CHARACTERIZATION AND
DEVICE APPLICATION (INVITED)
D. HOMMEL, H. WENISCH, M. BEHRINGER, M. FAHRER, M. KLUDE, A. ISEMANN AND
K. OHKAWA*, UNIV. BREMEN, GERMANY AND *TOKYO UNIV. SCI. & TECHNOL.,
JAPAN 350 14:00 (2) STIMULATION OF POLARITON IN WIDEBANDGAP
SEMICONDUCTOR MICROCAVITIES (INVITED) F. BOEUF, R. ANDRE, D. HEGER, R.
ROMESTAIN AND L.S. DANG, UNIV. JOSEPH-FOURIER
GRENOBLE, FRANCE 352
14:30 (3) CRYSTAL GROWTHAND CHARACTERIZATION OF II-VI COMPOUND LIGHT
EMITTING DIODES WITH NOV EL SUPERLATTICE QUASI-QUATERNARY CLADDING
LAYERS ON INP SUBSTRATES W. SHINOZAKI, I. NOMURA, H. SHIMBO, H. HATTORI,
T. SANO, S.-B. CHE, A. KIKUCHI, K. SHIMOMURA AND K. KISHINO, SOPHIA
UNIV., JAPAN 354
14:45 (4) ZNO QUANTUM STRUCTURES TOWARDS UV DIODE LASERS (INVITED) M.
KAWASAKI, A. OHTOMO, R. SHIROKI, I. OHKUBO, H. KIMURA, G. ISOYA*, T.
YASUDA*, Y. SEGAWA** AND H. KOINUMA, TOKYO INST. TECHNOL., *ISHINOMAKI
SENSHU UNIV. AND **RIKEN, JAPAN 356
15:15 (5) PERIODIC BOUNDARY QUANTUM CHEMICAL STUDY ON ZNO ULTRA-VIOLET
LASER EMITTING MATERI ALS
Y. OUMI, H. TAKABA, S.S.C. AMMAL, M. KUBO, K. TERAISHI, A. MIYAMOTO, M.
KAWASAKI*, M. YOSHIMOTO* AND H. KOINUMA*, TOHOKU UNIV. AND *TOKYO INST.
TECHNOL., JAPAN 358
15:30 (6) MBE GROWTH OF ZNO USING N02 AS OXYGEN SOURCE K. SAKURAI, D.
IWATA, SHIZUO FUJITA AND SHIGEO FUJITA, KYOTO UNIV., JAPAN 360
C-8: SYMPOSIUM ON WIDEGAP ELECTRONICS AND OPTOELECTRONICS (II)
(16:05-17:50)
16:05 (1) PHYSICS OF GAN-BASED LED S AND LASERS (INVITED) A. HANGLEITER,
STUTTGART UNIV., GERMANY 362
16:35 (2) CHARACTERISATION OF GANP LAYERS GROWN ON (0001) GAN/SAPPHIRE
BY GAS SOURCE MOLECU LAR BEAM EPITAXY I-.T. BAE, T.-Y. SEONG, Y. ZHAO*
AND C.W. TU*, KWANGJU INST. SCI. & TECHNOL., KOREA AND *UNIV.
CALIFORNIA, U.S.A 364
XXVLLL
IMAGE 14
16:50 (3) POLYSILANE LEDS EMITTING ULTRAVIOLET LIGHT AT ROOM TEMPERATURE
Y. XU, T. FUJINO, H. NAITO, K. OKA AND T. DOHMARU, OSAKA PREF. UNIV.,
JAPAN 366 17:05 (4) LONG LIFETIME INGAN/GAN/ALGAN-BASED LASER DIODES
GROWN ON GAN SUBSTRATES
(INVITED)
S. NAKAMURA, NICHIA CHEMICAL, JAPAN 368
17:35 (5) GROWTH CONDITION DEPENDENCE OF THE PHOTOLUMINESCENCE
PROPERTIES OF INXGAI.XN/ INYGAJ.YN MULTIPLE QUANTUM WELLS GROWN BY MOCVD
J.C. HARRIS, H. BRISSET, T. SOMEYA AND Y. ARAKAWA, UNIV. TOKYO, JAPAN
370
ROOM D
D-6: NOVEL DEVICES AND MATERIALS (I) (9:30-12:00)
9:30 (1) DIGITAL CIRCUITS BASED ON SINGLE FLUX QUANTA (INVITED) K.
NAKAJIMA AND T. ONOMI, TOHOKU UNIV., JAPAN 372
10:00 (2) MICROWAVE PROPERTIES OF
SUPERCONDUCTOR-CONSTRICTIONS-SUPERCONDUCTOR DEVICES A. SAITO, Y. UZAWA*,
A. KAWAKAMI*, Z. WANG* AND K. HAMASAKI, NAGAOKA UNIV. TECHNOL. AND
*M.P.T., JAPAN 374
10:15 (3) STRESS-INDUCED LEAKAGE CURRENT AND LATERAL NON-UNIFORM CHARGE
GENERATION IN THERMAL OXIDES SUBJECTED TO NEGATIVE-GATE-VOLTAGE IMPULSE
STRESSING W.-K. CHIM AND P.-S. LIM, NATL. UNIV. SINGAPORE, SINGAPORE 376
10:30 (4) SUBSTRATE RESISTANCE EFFECT ON CHARGE PUMPING CURRENT IN
POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS
G.W. LEE, J.W. LEE AND C.H. HAN, KAIST, KOREA 378
10:45 (5) AVALANCHE-MODE A-SE THIN FILMS FOR SOLID STATE IMAGE SENSORS
W.D. PARK, M. KOSUGI*, Y. TAKIGUCHI*, S. SUZUKI*, M. KUBOTA*, T. KATOH*,
K. SHIDARA*, K. TANIOKA*, A. KOBAYASHI** AND T. HIRAI**, DONGYANG UNIV.,
KOREA, *NHK AND **HAMAMATSU PHOTONICS, JAPAN 380
11:00 (6) A NEW APPROACH OF PHOTONIC BANDGAP FORMATION -WAFER BONDING
AND DELAMINATION TECHNIQUEK. WADA, H. AGA*, K. MITANI*, T. ABE*, M.
SUEZAWA** AND L.C. KIMLING, MAS SACHUSETTS INST. TECHNOL., U.S.A.,
*SHIN-ETSU HANDOTAI AND **TOHOKU UNIV., JAPAN... 382
11:15 (7) A 1.3-UM OPERATION SI-BASED PLANAR P-I-N PHOTODIODE WITH GE
ABSORPTION LAYER USING
STRAIN-RELAXING SELECTIVE EPITAXIAL GROWTH TECHNOLOGY M. SUGIYAMA, T.
MORIKAWA, T. TATSUMI, T. AOYAMA AND F. SATO, NEC, JAPAN 384 11:30 (8)
SIGNAL PROPAGATION CHARACTERISTICS IN POLYMIDE OPTICAL WAVEGUIDE WITH
MICRO-MIRRORS FOR OPTICAL MULTICHIP MODULE
Y. KUWANA, A. HIROSE*, H. KURINO* AND M. KOYANAGI*, HITACHI CHEMICAL AND
*TOHOKU UNIV., JAPAN 386
11:45 (9) AN OPTOMECHANICAL PRESSURE SENSOR USING MULTI-MODE
INTERFERENCE COUPLERS D. HAH, E. YOON AND S. HONG, KAIST, KOREA 388
D-7: COMPOUND SEMICONDUCTOR AND THEIR ICS (13:30-15:30)
13:30 (1) MILLIMETER-WAVE MMIC TECHNOLOGY (INVITED) Y. ITOH, MITSUBISHI,
JAPAN 390
14:00 (2) 20V OPERATION POWER GAAS MESFET WITH A FIELD-MODULATING PLATE
K. ASANO, Y. MIYOSHI, K. ISHIKURA, Y. NASHIMOTO, M. KUZUHARA AND M.
MIZUTA, NEC, JAPAN 392
14:15 (3) ANALYSIS OF ELECTRIC FIELD DISTRIBUTION IN NOVEL GAAS MESFET
WITH A FIELD-MODULATING
PLATE
Y. HORI, M. KUZUHARA AND M. MIZUTA, NEC, JAPAN 394
14:30 (4) HIGH CURRENT/GIN SELF-ALIGNED PJ-HFET OF COMPLETELY
ENHANCEMENT-MODE OPERATION K. NISHII, M. NISHITSUJI, T. YOKOYAMA, S.
YAMAMOTO, A. TAMURA AND K. INOUE, MAT SUSHITA ELECTRONICS, JAPAN 396
14:45 (5) ANNEALING BEHAVIOR OF LOW-TEMPERATURE-DEPOSITED SRTI03
CAPACITOR M. NISHITSUJI, K. INOUE, A. TAMURA, T. TANAKA AND D. UEDA,
MATSUSHITA ELECTRONICS, JAPAN 398
XXIX
IMAGE 15
15:00 (6) FROM STRAIN-COMPENSATED IN0.8OGA020AS/INALAS TO INAS/INALAS
HEMT S I.J. HSIEH, C.C. LIAO*, C. TSAI* AND A. CHIN*, CHUNG HUA UNIV.
AND *NATL. CHIAO
TUNG UNIV., TAIWAN 400
15:15 (7) SIMULATION OF THE INFLUENCE OF THE PIEZOELECTRIC EFFECT ON THE
DEVICE CHARACTERISTICS OF ALGAN/GAN INSULATED GATE HETEROSTRUCTURE FETS
S. IMANAGA AND H. KAWAI, SONY, JAPAN 402
D-8: NOVEL DEVICES AND MATERIALS (II) (15:50-17:35)
15:50 (1) SPIN DEPENDENT PHENOMENA IN MAGNETIC AND NON-MAGNETIC III-V S
(INVITED) H. OHNO, TOHOKU UNIV., JAPAN 404
16:20 (2) GAAS MISFET BASED MEMORY WITH A NANOCOMPOSITE GATE F. SABRI
AND D.G. HASKO, UNIV. CAMBRIDGE, U.K 406
16:35 (3) MULTIPLE GATED INAS DOT ENSEMBLES G. AUSTING, S. TARUCHA, M.
HENINI*, S. STODDART*, P. MAIN* AND L. EAVES*, NTT, JAPAN AND *UNIV.
NOTTINGHAM, U.K 408
16:50 (4) A NEW APPROACH FOR THE RELIABLE SIMULATION OF RESONANT
TUNNELLING DIODES J. GARCIA-GARCIA, F. MARTIN, X. ORIOLS AND J. SUNE,
UNIV. AUTONOMA BARCELONA, SPAIN.. .410
17:05 (5) DOUBLE-QUANTUM-WELL SII.XGEX/SI ELECTRON RESONANT TUNNELING
DIODE WITH A HIGH PEAKTO-VALLEY RATIO AT RT H. KOYAMA AND Y. SUDA, TOKYO
UNIV. A&T, JAPAN 412
17:20 (6) FIRST DEMONSTRATION OF RECTIFYING PROPERTY OF P-L-N
HETEROJUNCTIONS FABRICATED BY TRILAYERED SEMICONDUCTING OXIDES M.
SUGIURA, K. URAGO, M. NODA, M. TACHIKI AND T. KOBAYASHI, OSAKA UNIV.,
JAPAN.. .414
SEPTEMBER 10, THURSDAY
ROOM A
A-9: SI AND SI-GE EPITAXY (9:30-11:40)
9:30 (1) 0400MM LARGE DIAMETER WAFER -VERY HIGH FLATNESS POLISHING IN
THE NANO-TECHNOLOGY DOMAIN (INVITED) K. TAKADA, SUPER SILICON CRYSTAL
RES. INST., JAPAN 416
10:00 (2) MECHANISM OF DEFECT FORMATION DURING LOW TEMPERATURE SI
EPITAXY ON CLEAN SI SUB STRATE
I. MIZUSHIMA, M. KOIKE, T. SATO, K. MIYANO AND Y. TSUNASHIMA, TOSHIBA,
JAPAN 418
10:20 (3) FACET-FREE SI SELECTIVE EPITAXIAL GROWTH ADAPTABLE TO ELEVATED
SOURCE/DRAIN MOSFETS WITH NARROW STI
K. MIYANO, I. MIZUSHIMA, K. OHUCHI, A. HOKAZONO AND Y. TSUNASHIMA,
TOSHIBA, JAPAN 420
10:40 (4) SI ATOMIC-LAYER-EPITAXY USING THERMALLY-CRACKED-SI2H6 Y. SUDA,
Y. MISATO AND D. SHIRATORI, TOKYO UNIV. A&T, JAPAN 422
11:00 (5) INTRINSIC STRESS AND MISFIT RELAXATION GE/SI(001) G. WEDLER,
J. WALZ, T. HESJEDAL*, E. CHILLA* AND R. KOCH, FREIE UNIV. BERLIN AND
*PAUL-DRUDE-INST. FESTKORPERELEKTRONIK, GERMANY 424
11:20 (6) ATOMIC-LAYER DOPING IN SI^GEX/SI/SII^GEX HETEROSTRUCTURES BY
TWO-STEP SOLID-PHASE EPITAXY N. SUGII, K. NAKAGAWA, S. YAMAGUCHI AND M.
MIYAO, HITACHI, JAPAN 426
A-10: SURFACE AND WAFER PROCESS (13:30-15:20)
13:30 (1) SPHERICAL SILICON CRYSTAL AND USE FOR INTEGRATED CIRCUITS
(INVITED) A. ISHIKAWA, BALL SEMICONDUCTOR, U.S.A 428
14:00 (2) COP-FREE SILICON SURFACES BY RAPID THERMAL ANNEALING (RTA) IN
A H2/AR MIXTURE AM BIENT USING HIGH GROWTH RATE CRYSTALS N. KOBAYASHI,
S. AKIYAMA, M. KATO AND T. ABE, SHIN-ETSU HANDOTAI, JAPAN 430
IMAGE 16
14:20 (3) INFLUENCE OF MICROSCOPIC CHEMICAL REACTION ON THE PREPARATION
OF OXIDE FREE SILICON SUR FACE IN FLUORINE-BASED SOLUTION Y. SUGITA AND
S. WATANABE, FUJITSU LABS., JAPAN 432
14:40 (4) WAFER-SCALE SELF-ORGANIZATION OF PERIODIC STEP/TERRACE
STRUCTURE ON HYDROGEN-TERMINAT ED SI SURFACE H. SAKAUE, T. TANAKA, S.
FUJIWARA, S. SHINGUBARA AND T. TAKAHAGI, HIROSHIMA UNIV., JAPAN 434
15:00 (5) HIGHLY EFFICIENT GETTERING OF HEAVY METALS USING CARBON
IMPLANTED EPTAXIAL SI WAFERS T. ITOGA, K. HOUZAWA, K. TAKEDA, S. ISOMAE
AND M. OHKURA, HITACHI, JAPAN 436
ROOM B
B-9: TFT AND NOVEL SI DEVICES (9:30-11:30)
9:30 (1) EXCIMER-LASER-INDUCED FLUORINE PASSIVATION EFFECTS ON
ELECTRICAL CHARACTERISTICS AND
STABILITY OF POLY-SI TFTS
C.-H. KIM, J.-H. JEON, J.-S. YOO, K.-C. PARK AND M.-K. HAN, SEOUL NATL.
UNIV., KOREA . 438
9:50 (2) PERFORMANCE AND RELIABILITY IMPROVEMENT OF POLYCRYSTALLINE
SILICON THIN FILM TRANSIS TORS BY DEUTERIUM PLASMA PASSIVATION D.C.
CHEN, C.Y. LU, S.S. CHUNG AND C.F. YEH, NATL. CHIAO TUNG UNIV., TAIWAN
... .440 10:10 (3) TWO-DIMENSIONAL NUMERICAL SIMULATION OF
SOLID-PHASE-CRYSTALLIZED POLYSILICON TFT
CHARACTERISTICS
T.-K. CHOU AND J. KANICKI, UNIV. MICHIGAN, U.S.A 442
10:30 (4) FUNCTION OF POROUS SILICON DIODE AS A LIGHT-EMITTING BISTABLE
MEMORY K. UENO AND N. KOSHIDA, TOKYO UNIV. A&T, JAPAN 444
10:50 (5) POROUS SILICON OPTICAL WAVEGUIDES WITH AN EXTREMELY HIGH
CONTRAST OF REFRACTIVE INDEX M. TAKAHASHI AND N. KOSHIDA, TOKYO UNIV.
A&T, JAPAN 446
11:10 (6) HIGHLY SENSITIVE MOSFET GAS SENSORS WITH POROUS PT-SNOX GATE
ELECTRODE FOR CO SENS ING APPLICATIONS K. KASAMA, D. SATO, H. FUKUDA
AND S. NOMURA, MURORAN INST. TECHNOL., JAPAN 448
B-10: SOI NEW DEVICES AND CHARACTERIZATION (13:30-14:50)
13:30 (1) A NEW MERGED BIMOS TRANSISTOR IN AN SOI STRUCTURE
Y.-S. ZHENG AND T. ASANO, KYUSHU INST. TECHNOL., JAPAN
450
13:50 (2) A NOVEL SOI CARRIER-INDUCING BARRIER-CONTROLLED LIGBT WITH
HIGH SWITCHING SPEED B.-H. LEE, J.-H. CHUN, D.-S. BYEON, D.-Y. KIM,
M.-K. HAN AND Y.-I. CHOI*, SEOUL NATL. UNIV. AND *AJOU UNIV., KOREA 452
14:10 (3) DETECTION OF PARTICLES ON QUARTER URN THICK OR THINNER SOI
WAFERS S. KUWABARA, K. MITANI, Y. YATSUGAKE* AND Y. KATO*, SHIN-ETSU
HANDOTAI AND
HITACHI ELEC. ENG., JAPAN 454
14:30 (4) A PRECISE SOI FILM THICKNESS MEASUREMENT INCLUDING GATE
DEPLETION AND QUANTUM EF FECTS
K. YAMAGUCHI, H. ONISHI, K. IMAI, S. KUMASHIRO AND T. HORIUCHI, NEC,
JAPAN 456
ROOM C
C-9: SYMPOSIUM ON WIDEGAP ELECTRONICS AND OPTOELECTRONICS (III)
(9:30-11:45)
9:30 (1) THEORETICAL RESULTS ON DOPABILITY IN LARGE BAND GAP II-VI
SEMICONDUCTORS (INVITED) J. CHADI, NEC, U.S.A 458
10:00 (2) COMPARISON AND INVESTIGATION OF OHMIC CHARACTERISTICS IN
NI/AUZN AND CR/AUZN TO P GAN D.-H. YOUN, M. HAO, Y. NAOI, S. MAHANTY, K.
YAMASHITA, T. SUGAHARA AND S. SAKAI, UNIV. TOKUSHIMA, JAPAN 460
10:15 (3) HIGH-TEMPERATURE BEHAVIORS OF GAN SCHOTTKY BARRIER DIODE K.
NAKAMURA, H. ISHIKAWA, T. EGAWA, T. JIMBO AND M. UMENO, NAGOYA INST.
TECH NOL., JAPAN 462
XXXI
IMAGE 17
10:30 (4) ANOMALOUS ELECTROCHEMICAL BEHAVIOR OF N-TYPE GAN FILMS ON
A-AL203 SUBSTRATES A. YAMAMOTO, Y. TSUJI, T. SUGIURA AND A. HASHIMOTO,
FUKUI UNIV., JAPAN 464
10:45 (5) HIGH TEMPERATURE REACTIVE ION ETCHING OF GAN AND ALGAN USING
CL2 AND CH4 PLASMA D. BASAK, K. YAMASHITA, T. SUGAHARA, D. NAKAGAWA, T.
WANG, K. NISHINO AND S. SAKAI, UNIV. TOKUSHIMA, JAPAN
466
11:00 (6) THEORETICAL MODELS FOR THE ELECTRON DRIFT AND HALL MOBILITY IN
N-TYPE 4H- AND 6H-SIC
K.M. ITOH, T. KINOSHITA, J. MUTO, M. SCHADT* AND G. PENSL*, KEIO UNIV.,
JAPAN AND
*UNIV. ERLANGEN-NURNBERG, GERMANY
468
11:15 (7) EFFECT OF SURFACE TREATMENT ON FIELD EMISSION PROPERTIES OF
CVD DIAMOND
H. KAWAMURA, T. MAKI AND T. KOBAYASHI, OSAKA UNIV., JAPAN 470
11:30 (8) ELECTRICAL STABILIZATION OF DIAMOND MIS INTERFACE BY EMPLOYING
BAF2 INSULATOR FILM AND APPLICATION TO DIAMOND MISFETS H. TANAKA, A.
ITO, Y. YUN, T. MAKI AND T. KOBAYASHI, OSAKA
UNIV., JAPAN 472
C-10: SYMPOSIUM ON WIDEGAP ELECTRONICS AND OPTOELECTRONICS (IV)
(13:30-15:00)
13:30 (1) ELECTRONIC APPLICATIONS OF GAN DEVICES (INVITED)
U.K. MISHRA, UNIV. CALIFORNIA, SANTA BARBARA, U.S.A
474
14:00 (2) CHARACTERISTICS OF GAN MESFET GROWN ON SAPPHIRE SUBSTRATE BY
MOCVD
T. EGAWA, K. NAKAMURA, H. ISHIKAWA, T, JIMBO AND M. UMENO, NAGOYA INST.
TECH
NOL., JAPAN
478
14:15 (3) INTERFACE PROPERTIES OF METAL/N-GAN SCHOTTKY CONTACTS
Y. KOYAMA, T. HASHIZUME AND H. HASEGAWA, HOKKAIDO UNIV., JAPAN 480
14:30 (4) EFFECT OF PROCESS TEMPERATURE ON SIC MOS PROPERTIES
X.W. WANG, X. GUO, T.P. MA, G.J. CUI*, T. TAMAGAWA*, B. HALPERN* AND Y.
TAKAHASHI**, YALE UNIV., *JET PROCESS, U.S.A. AND **NIHON UNIV., JAPAN
482
14:45 (5) HIGHLY IMPROVED ELECTRICAL PROPERTIES OF DIAMOND MISFET
PREPARED BY ULTRAHIGH-VACU
UM PROCESS Y. YUN, T. MAKI, H. TANAKA AND T. KOBAYASHI, OSAKA UNIV.,
JAPAN 484
ROOM D
D-9: PROCESS SIMULATION (I) (10:40-12:00)
10:40 (1) FIRST-PRINCIPLES STUDY OF THE OXIDE GROWTH PROCESS ON SILICON
SURFACES AND AT SILICON-
OXIDE/SILICON INTERFACES
H. KAGESHIMA AND K. SHIRAISHI, NTT, JAPAN
486
11:00 (2) INCORPORATION OF N INTO SI/SI02 INTERFACES: MOLECULAR ORBITAL
CALCULATIONS FOR EVALUATING
INTERFACE STRAIN AND HEAT OF REACTION
J. USHIO, T. MARUIZUMI AND M. MIYAO, HITACHI, JAPAN
488
11:20 (3) DEPENDENCE OF HOPPING-CONDUCTION ENERGY OF HOLES ON DISTANCE
BETWEEN TRAP SITES IN
SI02: A MOLECULAR ORBITAL CALCULATION Y. TAKEMURA, J. USHIO, T.
MARUIZUMI AND M. MIYAO, HITACHI, JAPAN 490
11:40 (4) PEROXY LINKAGE DEFECTS IN SI02 EXAMINED THROUGH
FIRST-PRINCIPLES CALCULATIONS: DEFECT
FORMATION, BORON BINDING, AND CHARGED STATES OF THE B ADDUCT.
T. MARUIZUMI, J. USHIO AND M. MIYAO, HITACHI, JAPAN
492
D-10: PROCESS SIMULATION (II) (13:30-14:50)
13:30 (1) TIGHT-BINDING MOLECULARDYNAMICS SIMULATION OFDESORBED SIO
MOLECULE DURING THE OXI
DATION OF SI(LLL) SURFACE A. YAMADA, A. ENDOU, H. TAKABA, K. TERAISHI,
S.S.C. AMMAL, M. KUBO, A. MIYAMOTO, K.G. NAKAMURA* AND M. KITAJIMA*,
TOHOKU UNIV. AND *NATL. RES. INST.
METALS, JAPAN
494
13:50 (2) STRUCTURAL ANALYSIS OF SIGEC ALLOYS BY AB INITIO TOTAL-ENERGY
CALCULATIONS
A. YAMADA, N. MIYAZONO AND M. KONAGAI, TOKYO INST. TECHNOL., JAPAN 496
14:10 (3) QUANTUM CHEMICAL STUDY ON THE INTERACTION OF NF3 WITH SI A.
ENDOU, A. YAMADA, M. KUBO, K, TERAISHI, S.S.C. AMMAL, A. MIYAMOTO, M.
KITAJI MA*, T.W. LITTLE** AND F.S. OHUCHI**, TOHOKU UNIV., *NATL. RES.
INST. METALS, JAPAN AND **UNIV. WASHINGTON, U.S.A 498
14:30 (4) FIRST-PRINCIPLES INVESTIGATION OF IMPERFECT STRUCTURES IN
SI02: ORIGINS OFCHARGE TRAPS IN DUCING LEAKAGE CURRENTS A. YOKOZAWA AND
Y. MIYAMOTO, NEC, JAPAN 500
XXXN
|
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| spelling | International Conference on Solid State Devices and Materials 1998 Hiroshima Verfasser (DE-588)5326294-3 aut Extended abstracts of the 1998 International Conference on Solid State Devices and Materials September 7 - 10, 1998, Hiroshima, International Conference Center Hiroshima Solid state devices and materials Tokyo Japan Soc. of Applied Physics 1998 XXXII, 21, 510 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Werkstoff (DE-588)4065579-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1998 Hiroshima gnd-content Halbleiterbauelement (DE-588)4113826-0 s Werkstoff (DE-588)4065579-9 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009319554&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Extended abstracts of the 1998 International Conference on Solid State Devices and Materials September 7 - 10, 1998, Hiroshima, International Conference Center Hiroshima Halbleiterbauelement (DE-588)4113826-0 gnd Werkstoff (DE-588)4065579-9 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4065579-9 (DE-588)1071861417 |
| title | Extended abstracts of the 1998 International Conference on Solid State Devices and Materials September 7 - 10, 1998, Hiroshima, International Conference Center Hiroshima |
| title_alt | Solid state devices and materials |
| title_auth | Extended abstracts of the 1998 International Conference on Solid State Devices and Materials September 7 - 10, 1998, Hiroshima, International Conference Center Hiroshima |
| title_exact_search | Extended abstracts of the 1998 International Conference on Solid State Devices and Materials September 7 - 10, 1998, Hiroshima, International Conference Center Hiroshima |
| title_full | Extended abstracts of the 1998 International Conference on Solid State Devices and Materials September 7 - 10, 1998, Hiroshima, International Conference Center Hiroshima |
| title_fullStr | Extended abstracts of the 1998 International Conference on Solid State Devices and Materials September 7 - 10, 1998, Hiroshima, International Conference Center Hiroshima |
| title_full_unstemmed | Extended abstracts of the 1998 International Conference on Solid State Devices and Materials September 7 - 10, 1998, Hiroshima, International Conference Center Hiroshima |
| title_short | Extended abstracts of the 1998 International Conference on Solid State Devices and Materials |
| title_sort | extended abstracts of the 1998 international conference on solid state devices and materials september 7 10 1998 hiroshima international conference center hiroshima |
| title_sub | September 7 - 10, 1998, Hiroshima, International Conference Center Hiroshima |
| topic | Halbleiterbauelement (DE-588)4113826-0 gnd Werkstoff (DE-588)4065579-9 gnd |
| topic_facet | Halbleiterbauelement Werkstoff Konferenzschrift 1998 Hiroshima |
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