Silicon carbide and related materials: ECSCRM2000 ; proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
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| Format: | Conference Proceeding Book |
|---|---|
| Language: | English |
| Published: |
Uetikon-Zürich
Trans Tech Publ.
2001
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| Series: | Materials science forum
353/356 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XXII, 833 S. graph. Darst. |
| ISBN: | 0878498737 |
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| 245 | 1 | 0 | |a Silicon carbide and related materials |b ECSCRM2000 ; proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 |c eds.: G. Pensl ... |
| 264 | 1 | |a Uetikon-Zürich |b Trans Tech Publ. |c 2001 | |
| 300 | |a XXII, 833 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Materials science forum |v 353/356 | |
| 650 | 4 | |a Silicon carbide |v Congresses | |
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| adam_text | Overview
Chapter
1:
SiC Bulk Growth
..........................................................................................1
Chapter
2:
SiC Epitaxy and Thin Film Growth
............................................................89
2.1
Homoepitaxial Growth
......................................................................91
2.2
Heteroepitaxial Growth
...................................................................151
2.3
Thin Film Growth
............................................................................191
Chapter
3:
Physical Properties of SiC
.........................................................................203
3.1
Surfaces and Interfaces
....................................................................205
3.2
Structure and Diffusion
...................................................................259
3.3
Optical Properties
............................................................................335
3.4
Electrical Properties
........................................................................421
3.5
Magnetic Resonance Properties
......................................................499
3.6
Positron Annihilation
......................................................................533
Chapter
4:
Processing of SiC
.....................................................................................541
4.1
Surveys
...........................................................................................543
4.2
Doping and Implantation
................................................................555
4.3
Contacts and Etching
......................................................................603
4.4
Dielectrics
.......................................................................................627
Chapter
5:
SiC Devices
.............................................................................................667
5.1
Unipolar Devices
...........................................................................669
5.2
Bipolar Devices
.............................................................................727
5.3
Sensors
..........................................................................................747
Chapter
6:
ΠΙ
-Nitrides
and Related Materials
...........................................................767
6.1
Growth and Physical Properties
....................................................769
6.2
Devices
..........................................................................................807
Authorlndex
....................................................................................819
Keyword Index
.................................................................................827
Table
of
Contents
Chapter
1:
SiC
Bulk Growth
Large Diameter, Low Defect Silicon Carbide
Boule
Growth
C.H. Carter Jr., R. Glass, M. Brady, D. Malta, D.
Henshall,
S.
Müller,
V.
Tsvetkov,
D.
Hobgood and A. Powell
.............................................................................................................
З
SiC
Single
Crystal Growth by Sublimation: Experimental and Numerical Results
С
Moulin, M.
Pons,
A. Pisch, P.
Grosse,
С.
Faure,
Α.
Basset,
G. Basset, A.
Passero,
T.
Billon,
В.
Pelissier, M. Anikin, E. Pemot, P.
Pemot-Rejmánková
and R. Madar
.....................7
Impact
of SiC
Source
Material on Temperature Field and Vapor Transport During
SiC PVT Crystal Growth Process
P.J.
Wellmann,
D.
Hofmann,
L. Kadinski, M.
Selder, T.L.
Straubinger and
A. Winnacker
................................................................................................................................11
Defect
Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of
Thermal Boundary Conditions
E.
Schmitt,
M.
Rasp, A.-D. Weber, M.
Kölbl,
R.
Eckstein,
L.
Kadinski and M.
Selder
.............15
Progress in
4H-SÍC
Bulk Growth
M. Anikin, E. Pernot, B. Pelissier, M.
Pons,
A. Pisch,
С
Bernard, T. Billon,
С
Faure,
С.
Moulin and
R.
Madar
...............................................................................................................21
Stability Criteria for
4H-SÍC
Bulk Growth
T.L. Straubinger, M. Bickermann, D.
Hofmann,
R.
Weingärtner, P.J. Wellmann
and
A. Winnacker
................................................................................................................................25
Growth Related Distribution of Secondary Phase Inclusions in
бН
-SiC
Single
Crystals
H.-J.
Rost,
J.
Dolle,
J. Doerschel, D.
Siehe,
D.
Schulz
and J.
Wollweber ...................................29
Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow
T.L. Straubinger, P.J.
Wellmann
and A. Winnacker
....................................................................33
Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk
Crystals
D.S.
Karpov, O.V.
Bord,
S.Yu. Karpov, A.I. Zhmakin, M.S.
Ramm
and
Yu.N. Makarov
.............................................................................................................................37
Some Aspects of Sublimation Growth of SiC Ingots
S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh and V.A. Yukhimchuk
.......................................41
Growth of Highly Aluminum-Doped p-type
бН
-SiC
Single Crystals by the Modified
Lely Method
N. Schulze,
J.
Gajowski,
К.
Semmelroth,
M.
Laube
and G.
Pensi
..............................................45
Study of Boron Incorporation During PVT Growth of p-type SiC Cry
stals
M.
Bickermann,
D.
Hofmann,
M.
Rasp,
T.L. Straubinger,
R.
Weingärtner,
P.J.
Wellmann
and A. Winnacker
.................................................................................................49
X
Silicon Carbide
and Related Materials
Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor
Transport
S.A.
Reshanov, V.P. Rastegaev and Yu.M. Tairov
......................................................................53
Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization
M.V. Bogdanov, O.V.
Bord,
А.О.
Galyukov, S.Yu. Karpov, A.V.
Kulik,
S.K. Kochuguev, A.E. Komissarov, D.K. Ofengeim, A.M. Serkov, A.V. Tsiryulnikov,
I.A.
Zhmakin, M.S.
Ramm,
A.I. Zhmakin and Yu.N. Makarov
..................................................57
Coupled Thermodynamic
-
Mass Transfer Modeling of the SiC
Boule
Growth by the
PVT Method
A. Pisch, E. Blanquet, M.
Pons,
С.
Bemard,
J.M. Dedulle and R. Madar
...................................61
Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC
Bulk Crystals
M.
Selder,
L.
Kadinski,
F.
Durst, T.L. Straubinger, P.J.
Wellmann
and D.
Hofmann
.................65
Crystal Growth of
15R-SÍC
and Various Polytype Substrates
T. Nishiguchi, T. Shimizu, M. Sasaki, S. Ohshima and S. Nishino
.............................................69
Micropipe
Filling by the Sublimation Close Space Technique
T. Furusho, S. Ohshima and S. Nishino
.......................................................................................73
Mechanism for Damage Healing of Cracked
бН
-SiC
Substrates by the Sublimation
Method
T. Shimizu, T. Nishiguchi, M. Sasaki, S. Ohshima and S. Nishino
.............................................77
Chemical Vapor Deposition of SiC by the Temperature Oscillation Method
YutakaAbe
...................................................................................................................................81
Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
D. Chaussende, C.
Jacquier, G.
Ferro, J.C. Viala,
F.
Cauwet and
Y. Monteil
.............................85
Chapter
2:
SiC Epitaxy and Thin Film Growth
2.1
Homoepitaxial Growth
Epitaxial Growth of
4H-SÌC
in a Vertical Hot-Wall CVD Reactor: Comparison
between Up- and Down-Flow Orientations
J. Zhang, A. Ellison,
Ö.
Danielsson,
A. Henry and
E. Janzén
......................................................91
Influence of the Growth Conditions on the Layer Parameters of
4H-SÌC
Epilayers
Grown in a Hot-Wall Reactor
G. Wagner and K. Irmscher
..........................................................................................................95
Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by
Using Simulation
Ö. Danielsson,
U.
Forsberg,
A. Henry and E. Janzén
..................................................................99
Modeling Analysis of SiC CVD in a Planetary Reactor
A.N.
Vorob ev, A.K.
Semenníkov,
A.I. Zhmakin, Yu.N. Makarov, M. Dauelsberg,
F. Wischmeyer,
M. Heuken and H. Jiirgensen
...........................................................................103
Materials Science Forum
Vols.
353-356
XI
Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall
Rotating-Disc Reactor
A.N.
Vorob ev, M.V. Bogdanov, A.E. Komissarov, S.Yu. Karpov, O.V.
Bord,
A.A.
Lovtsus and Yu.N. Makarov
..............................................................................................107
Ab Initio
Study of Silicon Carbide: Bulk and Surface Structures
С
Raffy, L. Magaud, E. Blanquet, M.
Pons
and A. Pasturel
.....................................................111
SiC Defect Density Reduction by Epitaxy on Porous Surfaces
S.E. Saddow, M. Mynbaeva, W.J. Choyke, R.P. Devaty,
S. Bai, G.
Melnychuck,
Y. Koshka,
V. Dmitriev and
C.E.C.
Wood
................................................................................115
Effect of Sublimation Growth on the Structure of Porous Silicon Carbide:
SEM
and
Х
-Ray Diffraction Investigations
N.S. Savkina, V.V. Ratnikov, V.B. Shuman and
A.A.
Lebedev
................................................119
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical
Substrates Using CVD
S. Nishino, Y. Masuda, S. Ohshima and
С
Jacob
......................................................................123
Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on
Patterned Silicon Substrates
С
Jacob, P. Pirouz and S. Nishino
.............................................................................................127
Characterization of
4H-SÌC
Epilayers Grown at a High Deposition Rate
H. Tsuchida, T. Tsuji, I.
Kamata,
T. Jikimoto, H. Fujisawa, S.
Ogino and K.
Izumi
................131
Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle
4H-SÍC
(0001)
Substrates
K. Masahara, M. Kushibe, H. Ohno, K.
Kojima,
T.
Takahashi, Yu. Ishida, T. Suzuki,
T. Tanaka, S. Yoshida and K.
Arai
.............................................................................................135
Surface Morphology of
4H-SÌC
Inclined towards <1
Ï
00> and <1
12
0> Grown by
APCVD Using the Si2Cl6+C3H8 System
Y. Masuda, S. Ohshima,
С
Jacob and S. Nishino
......................................................................139
Growth of
ЗС-ЅКГ
Using Off-Oriented
бН
-SiC
Substrates
M. Syväjärvi, R.
Yakimova,
H.
Jacobsson
and
E. Janzén
..........................................................143
SiC Polytype Transformation
on the Growth Surface
E.N.
Mokhov, S.K. Obyden,
A.D.
Roenkov, G.V. Saparin and Yu.A.
Vodákov
......................147
2.2
Heteroepitaxial Growth
Improvement of the
ЗС-ЅЈС/ЅЈ
Interface by Flash Lamp Annealing
D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera,
N.
Vouroutzis,
G. Krötz
and
W.
Skorupa
.................................................................................................................................151
How to Grow Unstrained
ЗС
-SiC
Heteroepitaxial Layers on Si
(100)
Substrates
T. Chassagne, G.
Ferro,
С.
Gourbeyre,
M. Le
Berre, D.
Barbier and Y. Monteil
.....................155
Growth of JC-SiC on Si by Low Temperature CVD
T. Cloitre,
N.
Moreaud, P. Vicente, M.L. Sadowski and R.L. Aulombard
................................159
Growth of SiC on Si(100) by Low-Pressure MOVPE
A.S.
Bakin,
A.A.
Ivanov,
D.
Piester,
T.
Riedl,
F.
Hitzel, H.-H.
Wehmann
and
A. Schlachetzki
...........................................................................................................................163
XII Silicon Carbide
and Related
Materials
The Microstructure
and Surface Morphology of Thin
ЗС
-SiC
Films Grown on
(100)
Si Substrates Using an APCVD-Based Carbonization Process
C.H. Wu, J. Chung, M.H. Hong, C.A. Zorman, P. Pirouz and M. Mehregany
.......................... 167
A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of
ЗС
-SiC
Films on Si
C.H. Wu, J. Chung, M.H. Hong, C.A. Zorman, P. Pirouz and M. Mehregany
..........................171
Selective Deposition of
ЗС
-SiC
Epitaxially Grown on SOI Subtrates
M. Eickhoff, S.
Zappe,
A. Nielsen, G.
Krötz, E. Obermeier,
N.
Vouroutzis and
J. Stoemenos
...............................................................................................................................175
Carbonization Induced Change of Polarity for MBE Grown
ЗС-ЅМГ/ЅНШ)
J. Pezoldt, B.
Schröter,
V. Cimalla, T.
Stauden,
R.
Goldhahn,
H.
Romanus
and
L.
Spieß.......................................................................................................................................179
The Influence of
Ge
on the SiC Nucleation on (lll)Si Surfaces
J. Pezoldt, T.
Wöhner,
T.
Stauden,
J.A. Schaefer and P. Masri
.................................................183
In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(lll)
and
(100)
Surfaces
V. Cimalla, K. Zekentes, K. Tsagaraki, T.
Stauden, F. Scharmarm
and J. Pezoldt
....................187
2.3
Thin Film Growth
Structural and Optical Properties of SiC Films Deposited on Si by DC Magnetron
Sputtering
Y.M. Lei, Y.H. Yu, L.L. Cheng, L. Lin, B. Sundaraval, E.Z. Luo,
S. Lin, C.X.
Ren,
W.Y. Cheung, S.P. Wong, J.B. Xu,
S.C. Zou
and I.H. Wilson
..................................................191
Laser Crystallization of Amorphous SiC Thin Films on Glass
S. Urban and F.
Falk
...................................................................................................................195
ТЕМ
Investigation of Si Implanted Natural Diamond
B. Pécz,
Á.
Barna,
V.
Heera, F. Fontaine and
W. Skorupa
........................................................199
Chapter
3:
Physical Properties of SiC
3.1
Surfaces and Interfaces
Surface Reconstruction on SiCiOOOl) and
SiCCOOOÏ):
Atomic Structure and
Potential Application for Oxidation, Stacking and Growth
U.
Starke .....................................................................................................................................205
Interplay of Surface Structure, Bond Stacking and Heteropolytypic Growth of SiC
U. Grossner, A. Fissel, J.
Furthmüller,
W.
Richter
and
F. Bechstedt.........................................211
Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001)
3x3
F. Amy, Y.-K. Hwu,
С
Brylinski and P. Soukiassian
...............................................................215
Comparison of HF and Ozone Treated SiC Surfaces
R.P. Mikalo, P. Hoffmann, D.R. Batchelor, A. Lloyd-Spetz, I.
Lundström
and
D.
Schmeißer ........................................................................................ .............219
Materials Science Forum
Vols.
353-356 XIII
Preparation and Characterization of Hydrogen Terminated
бН
-SiC
N.
Sieber, T. Seyller, B.F. Mantel, J. Ristein and L. Ley
...........................................................223
Polytype and Polarity of Silicon Carbide and Aluminium Nitride Films Growing by
M
BE: A Nondestructive Identification
B.
Schröter,
Α.
Winkelmann,
A. Fissel, V. Lebedev and W.
Richter ........................................227
Surface Abstraction Reactions at Experimental Temperatures; A Theoretical Study
of4H-SiC(0001)
J. Olander and
K. Larsson
..........................................................................................................231
Combined Scanning Tunneling Microscopy and
Photoemission
Studies of the
ß-SiCilOO) c(4x2)
Surface Reconstruction
V. Derycke, P. Fonteneau, V.Yu. Aristov, H.
Enriquez
and P. Soukiassian
..............................235
Investigation of the SiC Surface after Nitrogen Plasma Treatment
L.A. Bereznjakova, A.V. Shchukarev and
V.l.
Ivanov-Omskii
.................................................239
Morphology of Sublimation Grown
óH-SiQOOOÏ)
Surfaces
D.
Schulz,
J.
Dolle, H.-J. Rost, D.
Siehe
and J.
Wollweber.......................................................243
Germanium on SiQOOOl): Surface Structure and Nanocrystals
B.
Schröter,
К.
Komlev,
U.
Kaiser,
G.
Heß,
G. Kipshidze
and W.
Richter...............................247
Origin of the Excellent Thermal Stability of Al/S ¡-Based Oh
mic
Contacts to p-Type
LPE
4H-SÌC
L. Kassamakova, R. Kakanakov, I. Kassamakov, K. Zekentes, K. Tsagaraki and
G. Atanasova
..............................................................................................................................251
Ion-Irradiation Effect on the Ni/SiC Interface Reaction
F. Roccaforte, L.
Calcagno,
P. Musumeci and
F. La
Via
...........................................................255
3.2
Structure and Diffusion
Analysis of Strain and Defect Formation in Low-Dimensional Structures in SiC
U. Kaiser, K. Saitoh and A. Chuvilin
.........................................................................................259
Source Material Related Distribution of Defects in
бН
-SiC
Single Crystals
H.-J.
Rost,
D.
Siehe,
J.
Dolle,
D.
Schulz
and J.
Wollweber.......................................................263
Characterization of
2
Inch SiC Wafers Made by the Sublimation Method
M. Sasaki, H. Shiomi and S. Nishino
.........................................................................................267
Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam
Analytical Methods
E.
Szilágyi,
N.Q.
Khánh,
Z.E.
Horváth,
T.
Lohner,
G.
Battistig,
Z. Zolnai, E. Kótai
and J.
Gyulai
...............................................................................................................................271
Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of
6H-SÍC
H.W.
Kunért,
T.P. Maurice, T.
Hauser, J.B.
Malherbe,
L.C. Prinsloo,
DJ.
Brink,
L.A. Falkovsky and J. Camassel
.................................................................................................275
4H- and
бН
-SiC
Rutherford Back Scattering-Channeling
Spectrometry: Polytype
Finger
Printing
R.
Nipoti and A. Camera
............................................................................................................279
XIV Silicon Carbide
and Related
Materials
Х
-ray
Diffraction,
Micro-Raman and Birefringence Imaging of Silicon Carbide
E. Pemot, M. Mermoux, J.
Kreisel,
О.
Chaix-Pluchery, P.
Pernot-Rejmánková,
M.
Anikin,
В.
Pelissier, A.M. Glazer and R. Madar
..................................................................283
Х
-Ray Diffraction Line Profile Analysis of Neutron Irradiated
óH-SiC
С.
Seitz, A. Magerl, H. Heissenstein and R. Helbig
...................................................................287
High-Resolution XRD Evaluation of Thick
4H-SÌC
Epitaxial Layers
H.
Jacobsson,
R.
Yakimova,
M. Syväjärvi, J.
Birch,
T. Tuomi
and E. Janzén
..........................291
Defect Analysis of SiC Sublimation Growth by the in-situ
Х
-Ray Topography
T.
Kato,
N.
Oyanagi, H. Yamaguchi, S.i. Nishizawa and K.
Arai
.............................................295
Crystal Defects as Source of Anomalous Forward Voltage Increase of
4H-SÌC
Diodes
J.P. Bergman, H.
Lendenmann, P.A.
Nilsson,
U.
Lindefelt and P.
Skytt
...................................299
A Simple Non-Destructive Technique to Detect
Micropipes
in Silicon Carbide
D.J. Morrison, A. Keir, I.H. Preston,
K.P.
Hilton, M.J.
Uren
and CM. Johnson
......................303
Micropipe
and Macrodefect Healing in SiC Crystals during Liquid Phase
Processing
B.M. Epelbaum, D.
Hofmann,
U.
Hecht
and A. Winnacker
......................................................307
Micropipe
Closing via Thick
4H-SÌC
Epitaxial Growth Involving Structural
Transformation of Screw Dislocations
I.
Kamata,
H. Tsuchida, T. Jikimoto and K.
Izumi
....................................................................311
Growth Evolution of Dislocation Loops in Ion Implanted
4H-SÍC
P.O.Å. Persson
and L. Hultman
..................................................................................................315
Lattice Parameter Measurements of
ЗС
-SiC
Thin Films Grown on
óH-SiCtOOOl)
Substrate Crystals
J.
Kräußlich,
A. Bauer, B.
Wunderlich
and K. Goetz
................................................................319
Self Diffusion in SiC: the Role of Intrinsic Point Defects
A. Mattausch, M. Bockstedte and O. Pankratov
........................................................................323
Modeling of Boron Diffusion in Silicon Carbide
H.
Bracht,
N.A. Stolwijk, M.
Laube
and G.
Pensi
.....................................................................327
Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated
Al-
Acceptors in SiC
С
Hülsen, N. Achtziger, J. Herold and
W.
Witthuhn ................................................................331
3.3
Optical Properties
Optical Characterization of SiC Materials: Bulk and Implanted Layers
J. Camassel, P. Vicente and L. Falkovski
...................................................................................335
Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC
S. Rohmfeld, M.
Hundhausen,
L.
Ley,
N. Schulze
and
G.
Pensi
...............................................341
Micro-Raman and
Photoluminescence
Study on n-type
бН
-SiC
Z.C. Feng, S.J. Chua, G.A. Evans, J.W. Steeds, K.P.J. Williams and G.D. Pitt
........................345
Low-Frequency Vibrational Spectroscopy in SiC Polytypes
B. Pajot, C.J. Fall, J.L. Cantin, H.J.
von Bardeleben,
R.
Jones, P.R. Briddon and
F. Gendron
..................................................................................................................................349
Materials Science Forum
Vols.
353-356
XV
Free Carrier Diffusion in
4H-SÍC
P. Grivickas, A. Martinez, I. Mikulskas, V. Grivickas,
R. Tomašiunas, J.
Lirmros
and
U.
Lindefeit..........................................................................................................................
353
Valence Band Splittings of ISR-SiC Measured using Wavelength Modulated
Absorption Spectroscopy
R.P. Devaty, S.
Bai,
W.J. Choyke, D. Hobgood and
DJ. Larkin...............................................357
Zeeman
Effect of Dt Bound Exciton in
4H-SÌC
C.Q. Chen, R. Helbig, R.
Winkler,
A. Wysmolek and M. Potemski
.........................................361
As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in
4H-SÌC
B. Magnusson,
A. Ellison,
F.H.C.
Carlsson,
N.T.
Son and
E. Janzén
.......................................365
Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons
H. Heissenstein and R. Helbig
....................................................................................................369
Presence of Hydrogen in SiC
A. Henry,
B. Magnusson,
M.K. Linnarsson, A. Ellison,
M. Syväjärvi, R.
Yakimova
and
E. Janzén
..............................................................................................................................373
Investigation of an Ion-Implantation Induced High Temperature Persistent
Intrinsic Defect in SiC
S.G. Sridhara,
F.H.C.
Carlsson,
J.P. Bergman, A. Henry and E.
Janzén
...................................377
Differentiation between
С
and Si Related Damage Centres in 4H- and
бН
-SiC
by the
Use of
90-300
kV
Electron Irradiation Followed by Low Temperature
Photoluminescence
Microscopy
J.W. Steeds, F. Carosella, G.A. Evans, M.M. Ismail, L.R.
Danks
and W. Voegeli
...................381
Infrared Investigation of Implantation Damage and Implantation Damage
Annealing in
4H-SÌC
J. Pemot, J.M. Bluet, J. Camassel and L.
Di Cioccio.................................................................
385
Investigation of Electroluminescence across
4H-SÌC
p+/n7n+ Structures Using
Optical Emission Microscopy
A. Galeckas, J. Linnros, B. Breitholtz and H. Bleichner
............................................................389
Defects Characterization in SiC by Scanning
Photoluminescence
Spectroscopy
L. Masarotto, J.M. Bluet,
M. Berenguer, P. Girard
and G. Guillot
............................................393
Absorption Measurements and Doping Level Evaluation in
η
-Type
and
p
-Туре
4H-
SiC and
6H-SÌC
R.
Weingärtner,
M. Bickermarm, D.
Hofmann,
M.
Rasp, T.L. Straubinger,
P.J.
Wellmann
and A. Wirmacker
...............................................................................................397
Low Temperature
Photoluminescence
Processes of 13C Enriched 6H- and
15R-SÌC
Crystals Grown by the Modified Lely Method
H. Sadowski,
N. Schulze,
T.
Frank,
M.
Laube,
G.
Pensi
and R. Helbig
....................................401
Intrinsic Photoconductivity of
бН
-SiC
and the Free-Exciton Binding Energy
I.G.
Ivanov,
T.
Egilsson, J. Zhang, A. Ellison and
E. Janzén
.....................................................405
Epitaxial Growth and Properties of SiC Layers Grown on
a-SiC(OOOl)
by Solid-
Source MBE:
A Photoluminescence
Study
A. Fissel and W.
Richter.............................................................................................................409
Prediction of Optical Properties of Si and Ge Dots in SiC
H.-C. Weissker, J. Furthmiiller and F. Bechstedt
.......................................................................413
XVI Silicon Carbide
and Related
Materials
Investigation of Variable Incidence Angle
Spectroscopie Ellipsometry for
Determination of Below Band Gap
Uniaxial
Dielectric Function
M.
Kildemo and
O. Hunden
.......................................................................................................417
3.4
Electrical Properties
Theory of Hydrogen in Silicon Carbide
P.
Deák,
A. Gali
and B.
Aradi
....................................................................................................421
Dissociation Energy of the
Passivating
Hydrogen-Aluminum Complex in
4H-SÍC
M.S.
Janson, A. Hallen,
M.K. Linnarsson,
N.
Nordell, S.
Karlsson
and B.G.
Svensson
...........427
Proton Irradiation Induced Defects in
4H-SÍC
L. Storasta,
F.H.C.
Carlsson,
S.G. Sridhara, D.
Åberg,
J.
P. Bergman,
A. Hallen
and
E. Janzén
..............................................................................................................................431
Intrinsic Defect Complexes in a-SiC: the Formation of
Antisite
Pairs
E.
Rauls,
Z.
Hajnal,
A. Gali,
Ρ.
Deák
and
T.
Frauenheim..........................................................435
Generation and Annihilation
of Intrinsic-Related Defect
Centers in
4H/6H-SÍC
T.
Frank,
M.
Weidner,
H.
Itoh and G.
Pensi
..............................................................................439
Implantation
Temperature
Dependent
Deep Level
Defects
in
4H-SÌC
D.
Åberg, L. Storasta, A. Hallen and B.G. Svensson
.................................................................443
Boron
in SiC: Structure and Kinetics
M.
Bockstedte, A. Mattausch and O. Pankratov
........................................................................447
Deep Level Investigation of pn-Junctions
formed
by MeV Aluminum and
Boron
Implantation into
4H-SÍC
A.
Schöner, N.
Miyamoto,
T.
Kimoto and
H. Matsunami
.........................................................451
Boron Centers in
4H-SÍC
B.
Aradi, A. Gali,
P.
Deák,
E.
Rauls,
T.
Frauenheim
and
N.T.
Son
...........................................455
Oxygen-Related Defect Centers Observed in
4H/6H-SÌC
Epitaxial Layers Grown
under CO2 Ambient
O. Klettke, G.
Pensi,
T.
Kimoto and H. Matsunami
...................................................................459
Electrical Activity of Isolated Oxygen Defects in SiC
A. Gali, D.
Heringer,
P.
Deák,
Z.
Hajnal,
T.
Frauenheim
and W.J. Choyke
.............................463
Beryllium-Related Defect Centers in
4H-SÍC
M.
Krieger,
M.
Laube,
M.
Weidner
and G.
Pensi
......................................................................467
Band
Gap States
of
Cr
in
the Lower Part of the SiC Band Gap
G. Pasold,
N. Achtziger,
J.
Grillenberger and W.
Witthuhn ......................................................471
Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence
of Deep Levels
J. Grillenberger,
N. Achtziger,
G.
Pasold,
R.
Sielemann
and
W.
Witthuhn...............................475
Shallow Dopant and Surface Levels in
бН
-SiC
MOS
Structures Studied by
Thermally Stimulated Current Technique
V.S. Lysenko, I.P. Osiyuk,
Т.Е.
Rudenko, I.P. Tyagulski,
E.Ö.
Sveinbj
örnsson
and
H.Ö.
Ólafsson
......................................................................................................................479
Intrinsic Mobility of Conduction Electrons in
4H-SÍC
J. Pemot,
S. Contreras,
E.
Neyret,
L.
Di Cioccio,
W. Zawadzki and
J.L.
Robert ......................
483
Materials Science Forum
Vols.
353-356 XVII
A Study of Band to Band Tunneling with Application to High-Field Transport in
Hexagonal SiC Polytypes
A. Martinez, H.-E.
Nilsson
and U.
Lindefeit
..............................................................................487
Thermopower Measurements in
4H-SÍC
and Theoretical Calculations Considering
the Phonon Drag Effect
V. Grivickas, M.
Stölzer, E.
Veimre,
A. Udal,
P. Grivickas,
M. Syväjärvi,
R.
Yakimova and V. Bikbajevas
................................................................................................491
Donor Densities and Donor Energy Levels in
ЗС
-SiC
Determined by a New Method
Based on Hall-Effect Measurements
H. Matsuura, Y. Masuda, Y. Chen and S. Nishino
.....................................................................495
3.5
Magnetic Resonance Properties
Intrinsic Defects in Silicon Carbide Polytypes
N.T.
Son, P.N.
Hai
and
E. Janzén
...............................................................................................499
Radiation-Induced Pair Defects in
бН
-SiC
Studied by Optically Detected Magnetic
Resonance
T. Lingner, S. Greulich-Weber and J.-M. Spaeth
.......................................................................505
Intrinsic Defects in
бН
-SiC
Generated by Electron Irradiation at the Silicon
Displacement Threshold
HJ. von Bardeleben,
J.L. Cantin, P.G.
Baranov
and E.N. Mokhov
...........................................509
EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and
4H-SÍC
HJ. von Bardeleben
and J.L. Cantin
..........................................................................................513
EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated
бН
-SiC
V.Ya. Bratus , I.N. Makeeva, S.M. Okulov, T.L. Petrenko, T.T. Petrenko and
HJ. von Bardeleben....................................................................................................................517
EPR of Deep
Al
and Deep
В
in Heavily Al-doped as Grown
4H-SÌC
I.V.
Ilyin, E.N. Mokhov and P.G.
Baranov
................................................................................521
The Electronic Structure of the
N
Donor Center in
4H-SÍC
and
бН
-SiC
A. van Duijn-Arnold, R.
Zondervan,
P.G.
Baranov,
E.N. Mokhov and J. Schmidt
...................525
Identification of Iron and Nickel in
бН
-SiC
by Electron Paramagnetic Resonance
P.G.
Baranov,
I.V.
Ilyin, E.N. Mokhov and V.A. Khramtsov
....................................................529
3.6
Positron Annihilation
Calculated Positron Annihilation Parameters for Defects in SiC
T.E.M. Staab, L.M. Torpo, M.J.
Puska
and R.M.
Nieminen......................................................533
Annealing Process of Defects in Epitaxial SiC Induced by He and Electron
Irradiation: Positron Annihilation Study
A. Kawasuso,
F. Redmann,
R.
Krause-Rehberg,
P.
Sperr,
T. Frank, M. Weidner,
G.
Pensi
and H. Itoh
....................................................................................................................537
XVIII Silicon Carbide
and Related
Materials
Chapter
4:
Processing of SiC
4.1
Surveys
Recent
Progress in
SiC
Epitaxial Growth and Device Processing Technology
T. Kimoto, H. Yano, S. Tamura,
N.
Miyamoto, K. Fujihira, Y. Negoro and
H. Matsunami
.............................................................................................................................543
Doping of Silicon Carbide by Ion Implantation
B.G.
Svensson, A. Hallen, M.K.
Linnarsson, A.Yu. Kuznetsov, M.S.
Janson, D. Åberg,
J.
Österman, P.O.Å. Persson,
L. Hultman, L.
Storasta,
F.H.C.
Carlsson,
J.P.
Bergman,
C. Jagadish and
E.
Morvan
.........................................................................................................549
4.2
Doping and
Implantation
Neutron Irradiation
of 4H
SiC
F.H.C.
Carlsson, L. Storasta, B. Magnusson, J.P. Bergman, K. Sköld and E. Janzén
...............555
Techniques
for Depth Profiling of Dopants in
4H-SÍC
J.
Österman, A. Hallen,
S. Anand, M.K. Linnarsson, H.
Andersson,
D.
Åberg,
D. Panknin and
W. Skorupa
.......................................................................................................559
Growth of
б
-Doped
SiC
Epitaxial Layers
S.
Karlsson, C. Adås,
A. Konštantínov and M.K. Linnarsson
...................................................563
Effect of Residual Damage on Carrier Transport Properties in
a 4H-SÌC
Double
Implanted Bipolar Junction Transistor
S. Ortolland, N.G. Wright, CM. Johnson, A.P. Knights, P.G. Coleman, C.P. Burrows
and AJ. Pidduck
.........................................................................................................................567
High Electrical Activation of Aluminium and Nitrogen Implanted in
бН
-SiC
at
Room Temperature by RF Annealing
M.
Lazar,
L.
Ottaviani, M.L. Locatelli,
С
Raynaud, D. Planson, E.
Morvan,
P. Godignon,
W. Skorupa
and J.P.
Chante
.................................................................................571
Enhancement of Electrical Activation of Aluminum Acceptors in
óH-SiC
by Co-
Implantation of Carbon Ions
T. Ohshima, H. Itoh and M. Yoshikawa
.....................................................................................575
High Dose Implantation in
ÓH-SiC
V. Heera,
W. Skorupa,
J.
Stoemenos and B.
Pécz
......................................................................579
Precipitate Formation in Heavily
ΑΙ
-Doped
4H-SÍC
Layers
M.K. Linnarsson, P.
O.A.
Persson,
H.
Bleichner, M.S.
Janson,
U.
Zimmermann,
H.
Andersson,
S.
Karlsson,
R.
Yakimova,
L. Hultman and B.G.
Svensson
...............................583
Flash Lamp Annealing of Implantation Doped
p-
and
η
-Type
ÓH-SiC
D. Panknin, T.
Gebel and
W. Skorupa
.......................................................................................587
Structural and Electrical Characterization of Ion Beam Synthesized and n-Doped
SiC Layers
С
Serre, D.
Panknin,
A. Pérez-Rodríguez, A. Romano-Rodríguez,
J.R.
Morante,
R.
Kögler,
W. Skorupa,
J.
Esteve
and
M.C. Acero
....................................................................591
Materials Science Forum
Vols.
353-356 XIX
Channeling Measurements of Ion Implantation Damage in
4H-SÍC
A.Yu. Kuznetsov, M.S.
Janson, A. Hallen, B.G. Svensson, C. Jagadish,
H.
Griinleitner and G.
Pensi
........................................................................................................595
The Monte Carlo Binary Collision Approximation Applied to the Simulation of the
Ion Implantation Process in Single Crystal SiC: High Dose Effects
G. Lulli, E. Albertazzi, R.
Nipoti,
M.
Bianconi
and A. Camera
................................................599
4.3
Contacts and Etching
Formation of Large Area
Al
Contacts on 6H- and
4H-SÌC
Substrates
O. Korolkov and T. Rang
...........................................................................................................603
Ru Schottky Barrier Contacts to n- and p-type
бН
-SiC
M.E.
Šamiji,
E.
van
Wyk,
L.
Wu, A. Venter and A.W.R. Leitch
..............................................607
Stability of Molybdenum Schottky Contact to Silicon Carbide
K. Nishikawa, M. Shimizu, B. Foster and H. Iwakuro
...............................................................611
Effects of Thermal Annealing on
Cu/óH-SiC
Schottky Properties
T. Hatayama, T. Suezaki, K. Kawahito, Yu. Uraoka and T. Fuyuki
..........................................615
Electrochemical Characterization of
p
-Туре
Hexagonal SiC
M. Kayambaki, K. Zekentes, K. Tsagaraki, E. PernotandR. Yakimova
..................................619
A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface
Breakdown in Power Devices
J.N. Merrett, D.C. Sheridan, J.R. Williams, C.C. Tin and John D. Cressler
..............................623
4.4
Dielectrics
Interface States of SiCb/SiC on
(112 0)
and
(0001)
Si Faces
H. Yano, T. Kimoto and H. Matsunami
.....................................................................................627
Interface Properties of
MOS
Structures Formed on
4H-SÍC
CCOOOÏ)
Face
K. Fukuda, S. Suzuki, J. Senzaki, W.J. Cho, T. Tanaka and K.
Arai
.........................................631
Steam Annealing Effects on
CV
Characteristics of
MOS
Structures on
(1120)
Face
of4H-SiC
M. Yoshikawa, T. Ohshima, H. Itoh, K. Takahashi and M. Kitabatake
....................................635
Role of H2 in Low Temperature Post-Oxidation Anneal for Gate Oxide on
бН
-SiC
V. Raineri, S.
Lombardo,
P. Musumeci, A.M. Maktari and L.
Calcagno
..................................639
Influence of the Post-Oxidation Process on the
MOS
Interface and MOSFETs
Properties
S. Suzuki, W.J. Cho, R. Kosugi, J. Senzaki, S. Harada and K. Fukuda
.....................................643
Observation of
SÌO2/S1C
Interface with Different Off-Angle from Si(0001) Face
Using Transmission Electron Microscopy
K. Fukuda, S. Suzuki, J. Senzaki, R. Kosugi, T. Tanaka and K.
Arai
........................................647
Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on
SiC
S. Scharnholz, O.
Hellmund,
J. Stein, B.
Spangenberg
and H.
Kurz .........................................651
XX
Silicon Carbide
and Related
Materials
Indications for Nitrogen-Assisted Removal of Carbon from SiCh-SiC Interface
P. Jamet, S. Dimitrijev and P. Tanner
........................................................................................655
Dissolution Mechanism of the Carbon Islands at the
SiO2/SiC
Interface
O.H. Krafcsik, K.V. Josepovits and P.
Deák
..............................................................................659
Dependence of Wet Oxidation on the Defect Density in
ЗС
-SiC
M. Eickhoff,
N.
Vouroutzis, A. Nielsen,
G. Krötz
and J. Stoemenos
........................................663
Chapter
5:
SiC Devices
5.1
Unipolar Devices
SiC Microwave Power Devices
E.
Morvan, O. Noblanc, C.
Dua
and
C. Brylinski
......................................................................669
1700
V SiC
Schottky Diodes
Scaled to
25
A
D.
Peters, K.O. Dohnke,
С
Hecht
and
D.
Stephani
...................................................................675
Temperature Dependence of Forward and Reverse Characteristics of
Ti,
W,
Та
and
Ni
Schottky Diodes on
4H-SÌC
M.
Treu,
R.
Rupp,
H.
Kapels and
W.
Bartsch ............................................................................679
A High Performance JBS Rectifier
-
Design Considerations
F. Dahlquist, H.
Lendenmann
and M.
Östling............................................................................683
Design and Characterization of 2.5kV
4H-SÍC
JBS Rectifiers with Self-Aligned
Guard Ring Termination
D.C. Sheridan, J.N. Merrett, J.D. Cressler, S.E. Saddow, J.R. Williams,
С
Ellis
andG.Niu
...................................................................................................................................687
Improvements in the Electrical Performance of High Voltage
4H-SÍC
Schottky
Diodes by Hydrogen Annealing
Q.u. Wahab, E.B.
Macák,
J.
Zhang, L.D. Madsen and
E. Janzén
..............................................691
Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in
4H-SÍC
P.
Friedrichs,
H. Mitlehner, R.
Schörner, R. Kaltschmidt,
К.О.
Dohnke
and
D.
Stephani
.................................................................................................................................695
A Comparison between Physical Simulations and Experimental Results in
4H-SÍC
MESFETs with Non-Constant Doping in the Channel and Buffer Layers
J. Eriksson,
N.
Rorsman,
H.
Zirath,
R.
Jonsson,
Q.u. Wahab and S. Rudner
............................699
Noise Behavior of
4H-SÍC
MESFETs at Low Drain Voltage
С
Banc, A.S. Royet, T. Ouisse, E.
Bano, O.
Noblanc and
С
Brylinski
....................................703
Double Implanted Power MESFET Technology in
4H-SÍC
A.B.
Horsfall,
S.
Ortolland, N.G. Wright, CM. Johnson and A.P. Knights
..............................707
Source Resistance Analysis of SiC-MESFET
M.
Arai,
M.
Ogata,
H.
Honda,
H.
Sawazaki, A. Nakagawa and M. Kitamura
...........................711
Design and Implementation of
RESURF
MOSFETs in
4H-SÌC
S. Banerjee, K. Chatty, T.P. Chow and R.J.
Gutmann...............................................................715
Materials Science Forum
Vols.
353-356 XXI
Comparison of Super-Junction Structures in
4H-SÍC
and Si for High Voltage
Applications
K. Adachi, CM. Johnson, H. Ohashi, T. Shinohe, K. Kinoshita and K.
Arai
...........................719
SiC Junction Control, an Alternative to
MOS
Control High Voltage Switching
Devices
A. Mihaila, F. Udrea, G. Brezeanu, R.
Azar
and G. Amaratunga
..............................................723
5.2
Bipolar Devices
Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
H.
Lendenmann, F. Dahlquist, N.
Johansson, R.
Söderholm, P.Å. Nilsson,
J.P. Bergman and P.
Skytt
..........................................................................................................727
Planar
p
-η
Diodes Fabricated by MeV-Energy and High-Temperature Selective
Implantation of Aluminum to
4H-SÍC
H. Sugimoto, S. Kinouchi, Y. Tarui, M. Imaizumi, K. Ohtsuka, T.
Takarni
and
T. Ozeki
......................................................................................................................................731
Silicon Carbide Zener Diodes
K. Vassilevski, K. Zekentes,
E.V.
Bogdanova, M.
Lagadas
and A. Zorenko
............................735
Characteristics of Epitaxial and Implanted N-Base
4H-SÍC
GTO
Thyristors
J.B.
Fedison and T.P. Chow
.......................................................................................................739
Turn-off Performance of a
2.6
kV 4H-SÍC
Asymmetrical GTO
Thyristor
A.K. Agarwal,
P.A.
Ivanov,
M.E.
Levinshtein,
J.W.
Palmour, S.L. Rumyantsev,
S.H. Ryu and M.S. Shur
.............................................................................................................743
5.3
Sensors
SiC Based Gas Sensors and their Applications
S.M. Savage, H.
Svenningstorp,
L. Unéus,
A. Kroutchinine, P. Tobias, L.G. Ekedahl,
I. Lundström,
C.I. Harris and A. Lloyd Spetz
............................................................................747
High Temperature
10
Bar Pressure Sensor Based on SC-SiC/SOI for Turbine
Control Applications
S.
Zappe,
J.
Franklin,
E. Obermeier,
M.
Eickhoff,
H.
Möller,
G.
Krötz,
С.
Rougeot,
О.
Lefort
and J.
Stoemenos
........................................................................................................753
Charged Particle Detection Properties of Epitaxial
4H-SÍC
Schottky Diodes
F.
Nava,
P.
Vanni,
G.
Verzellesi, A. Castaldini,
A. Cavallini,
L.
Polenta,
R.
Nipoti
and
C. Donolato
..........................................................................................................................757
Thin Heavily Compensated
бН
-SiC
Epilayers as Nuclear Particle Detectors
A.A.
Lebedev,
N.B.
Strokan, A.M.
Ivanov,
D.V. Davydov and V.V. Kozlovskii
.....................763
Chapter
6:
Ill-Nitrides and Related Materials
6.1
Growth and Physical Properties
The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys
J.S.Speck....................................................... .............................................................................769
XXII Silicon Carbide
and Related
Materials
A1N
Crystal Growth by Sublimation Technique
S.Yu. Karpov, A.V.
Kulik,
M.S.
Ramm,
E.N.
Mokhov,
A.D.
Roenkov, Yu.A.
Vodákov
and Y11.N. Makarov
....................................................................................................................779
Investigation of the Structure of 2H-A1N Films on Si(001) Substrates
J. Jinschek, U. Kaiser, V. Lebedev and W.
Richter
....................................................................783
Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN
Heterostructures
A. Link, O. Ambacher, I.P. Smorchkova, U.K. Mishra, J.S. Speck and M.
Stutzmann ............787
Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
G. Pozina, J.P. Bergman, B. Monemar, M. Iwaya, S. Nitta, H.
Amano
and I. Akasaki
............791
From Relaxed to Highly Tensily Strained GaN Grown on
бН
-SiC
and Si(lll):
Optical Characterization
M. Leroux, H. Lahrèche, F. Semond, M.
Laugt,
E. Feltin,
N. Schnell, B.
Beaumont,
P.
Gibart and J. Massies..............................................................................................................795
Electron Traps in Undoped GaN
Layers Subjected to Gamma-Irradiation and
Annealing
D.V. Davydov, V.V. Emtsev,
A.A.
Lebedev, W.V.
Lundin,
D.S.
Poloskin,
N.M.
Shmidt, A.S. Usikov and E.E. Zavarin
.............................................................................799
Characterization of
GaAlN/GaN Superlattice
Heterostructures
Z. Makkai, B.
Pécz, M.A. di
Forte-Poisson
and
F. Huet............................................................803
6.2
Devices
Ill-Nitride Power Devices
-
Good Results and Great Expectations
M.S. Shur, R. Gaska and A. Khan
..............................................................................................807
High-Performance Surface-Channel Diamond Field-Effect Transistors
H. Umezawa, H. Taniuchi, T.
Arima,
M.
Tachiki,
H.
Okushi and
H. Kawarada
......................815
Author Index
.................................................................................................................................819
Keyword Index
..............................................................................................................................827
|
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| genre_facet | Konferenzschrift 2000 Banz |
| id | DE-604.BV013615548 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:49:01Z |
| institution | BVB |
| institution_GND | (DE-588)1902161-6 |
| isbn | 0878498737 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009302409 |
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| physical | XXII, 833 S. graph. Darst. |
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| series | Materials science forum |
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| spelling | Silicon carbide and related materials ECSCRM2000 ; proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 eds.: G. Pensl ... Uetikon-Zürich Trans Tech Publ. 2001 XXII, 833 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials science forum 353/356 Silicon carbide Congresses Nichtoxidkeramik (DE-588)4297838-5 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 2000 Banz gnd-content Nichtoxidkeramik (DE-588)4297838-5 s DE-604 Siliciumcarbid (DE-588)4055009-6 s Pensl, Gerhard Sonstige oth European Conference on Silicon Carbide and Related Materials 3 2000 Bad Staffelstein Sonstige (DE-588)1902161-6 oth Materials science forum 353/356 (DE-604)BV001902147 353/356 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009302409&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Silicon carbide and related materials ECSCRM2000 ; proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 Materials science forum Silicon carbide Congresses Nichtoxidkeramik (DE-588)4297838-5 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4297838-5 (DE-588)4055009-6 (DE-588)1071861417 |
| title | Silicon carbide and related materials ECSCRM2000 ; proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 |
| title_auth | Silicon carbide and related materials ECSCRM2000 ; proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 |
| title_exact_search | Silicon carbide and related materials ECSCRM2000 ; proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 |
| title_full | Silicon carbide and related materials ECSCRM2000 ; proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 eds.: G. Pensl ... |
| title_fullStr | Silicon carbide and related materials ECSCRM2000 ; proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 eds.: G. Pensl ... |
| title_full_unstemmed | Silicon carbide and related materials ECSCRM2000 ; proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 eds.: G. Pensl ... |
| title_short | Silicon carbide and related materials |
| title_sort | silicon carbide and related materials ecscrm2000 proceedings of the 3rd european conference on silicon carbide and related materials kloster banz germany september 2000 |
| title_sub | ECSCRM2000 ; proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 |
| topic | Silicon carbide Congresses Nichtoxidkeramik (DE-588)4297838-5 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Silicon carbide Congresses Nichtoxidkeramik Siliciumcarbid Konferenzschrift 2000 Banz |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009302409&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001902147 |
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