Semiconductor silicon 1994: proceedings of the Seventh International Symposium on Silicon Materials Science and Technology
Saved in:
| Format: | Conference Proceeding Book |
|---|---|
| Language: | English |
| Published: |
Pennington, NJ
Electrochemical Soc.
1994
|
| Series: | Electrochemical Society: Proceedings
1994,10 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XXIII, 1218 S. Ill., graph. Darst. |
| ISBN: | 1566770424 |
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| 245 | 1 | 0 | |a Semiconductor silicon 1994 |b proceedings of the Seventh International Symposium on Silicon Materials Science and Technology |c ed. H. R. Huff ... |
| 264 | 1 | |a Pennington, NJ |b Electrochemical Soc. |c 1994 | |
| 300 | |a XXIII, 1218 S. |b Ill., graph. Darst. | ||
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| 490 | 1 | |a Electrochemical Society: Proceedings |v 1994,10 | |
| 650 | 7 | |a Circuits intégrés à très grande échelle |2 ram | |
| 650 | 7 | |a Semiconducteurs |2 ram | |
| 650 | 7 | |a Silicium |2 ram | |
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| adam_text | IMAGE 1
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X/
PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON MATERIALS
SCIENCE AND TECHNOLOGY
SEMICONDUCTOR SILICON/1994
EDITORS
H.R. HUFF SEMATECH AUSTIN, TEXAS
W. BERGHOLZ SIEMENS AG COMPONENTS DIVISION REGEMSBURG, GERMANY
K. SUMINO
TOHOKU UNIVERSITY SENDAI, JAPAN
ELECTRONICS DIVISION
PROCEEDINGS VOLUME 94-10
THE ELECTROCHEMICAL SOCIETY, INC., 10 SOUTH MAIN ST., PENNINGTON, NJ
08534-2896
IMAGE 2
CONTENTS
PREFACE III
PART 1 - - ULSI OVERVIEW
CHAPTER 1 - - ULSI OVERVIEW 1
INVITED: OVERVIEW OP ULSI TRENDS P. CHATTERJEE AND G. LARRABEE 3
INVITED: OVERVIEW OF ULSI TRENDS IN JAPAN E. TAKEDA 20
INVITED: DEEP LEVELS IN SILICON AND SILICONGERMANIUM ALLOYS H. G.
GRIMMEISS AND M. KLEVERMAN 37
PART II - - SILICON PROCESS
CHAPTER 2 - - SILICON CRYSTAL GROWTH 53
INTRODUCTORY REMARKS - SILICON CRYSTAL GROWTH S. TAKASU AND W. ZULEHNER
55
INVITED: DOUBLE LAYERED CZ (DLCZ) SILICON CRYSTAL GROWTH S. KOBAYASHI,
H. FUJIWARA, T. FUJIWARA, T. KUBO, S. INAMI, M. OLCUI, S. MIYAHARA,
Y. AKASHI, K. KURAMOCHI, Y. TSUJIMOTO AND S. OKAMOTO 58
DENSITY VARIATION OF MOLTEN SILICON AND INFLUENCE ON CRYSTAL PERFECTION
H. SASAKI, K. TERASHIMA, E. TOKIZAKI
AND S. KIMURA 70
K-E HYDUODYMVMIC INTEGRATED THERMAL-CAPILLARY MODEL FOR PREDICTING
TEMPERATURE FIELD AND DOPANT CONCENTRATION IN CZOCHRALSKI GROWTH OF
SILICON T. K. KINNEY, D. E. BORNSIDE, W. ZHOU,
R. A. BROWN AND K. M. KIM 80
SI
IMAGE 3
INFLUENCE OF THE ROTATION IN THE CZ FURNACE UPON THE OXYGEN
CONCENTRATION IN THE SI CRYSTAL S. TOGAWA, A. YOKOTANI, S. KIMURA, Y.
SHIRAISHI AND M. IMAI 90
INFLUENCE OF POLYSILICON AND CRUCIBLE PURITY ON THE MINORITY CARRIER
RECOMBINATION LIFETIME OF CZOCHRALSKI SILICON CRYSTALS G. BORIONETTI, M.
PORRINI, P. GERANZANI,
R. ORIZIO AND R. FALSTER 104
SILICON FLOATING ZONE PROCESS: NUMERICAL MODELLING OF RF FIELD, HEAT
TRANSFER, THERMAL STRESS AND EXPERIMENTAL PROOF FOR 4 CRYSTALS
H. RIEMANN, A. LTLDGE, K. BOTTCHER, H-J. ROST, B. HALLMANN, W.
SCHRFIDER, W. HENSEL AND B. SCHLEUSENER 111
EVALUATION OF FPDS AND COPS IN SILICON SINGLE-CRYSTALS H. YAMAGISHI, I.
FUSEGAWA, K. TAKANO, E. LINO, N. FUJIMAKI, T. OHTA
AND M. SAKURADA 124
GATE OXIDE RELATED BULK PROPERTIES OF OXYGEN DOPED FLOATING ZONE AND
CZOCHRALSKI SILICON W. V. AMMON, A. EHLERT, U. LAMBERT,
D. GRAF, M. BROHL AND P. WAGNER 136
FORMATION OF INTERSTITIAL OXYGEN STRIAT10NS IN CZ GROWN SILICON SINGLE
CRYSTALS E. LINO, K. TAKANO, I. FUSEGAWA AND H. YAMAGISHI 148
OXYGEN PRECIPITATION BEHAVIOR IN SILICON DURING CZOCHRALSKI CRYSTAL
GROWTH M. HOURAI, T. NAGASHIMA, E. KAJITA, S. MIKI, S. SUMITA, M. SANO
AND T. SHIGEMATSU 156
DISTRIBUTION OF AS-GROWN DEFECTS IN A SILICON SINGLE CRYSTAL K.
NAKAJIMA, J. FURUKAWA, H. FURUYA AND T. SHINGYOUJI 168
THE GROWTH OF SILICON SINGLE CRYSTALS BY THE MAGNECTIC FIELD APPLIED
CONTINUOUS CZ (CMCZ) METHOD
Y. ARAI, M. KIDA, N. ONO, K. ABE, N. MACHIDA, H. FURUYA AND K. SAHIRA
180
INVITED:
INVITED:
XU
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CHAPTER 3 -- WAFER PREPARATION 193
INTRODUCTORY REMARKS - WAFER PREPARATION R. TAKIGUICHI AND P. 0. HAHN
195
INVITED: MANUFACTURING PROCESSES FOR ADVANCED SILICON ULSI WAFERS E.
STEFFEN, J. SCHANDL, H. LUNDT AND J. JUNGE 197
INVITED: THE DUCTILE MODE GRINDING TECHNOLOGY APPLIED TO SILICON
WAFERING PROCESS T. ABE, Y. NAKAZATO, M. DALTO,A. KANAI AND M. MIYASHITA
207 SUBSURFACE DAMAGE OF ABRADED SILICON WAFERS H. LUNDT, M. KERSTAN, A.
HUBER AND P. 0. HAHN 218
PERFECT SILICON SURFACE BY HYDROGEN-ANNEALING H. KUBOTA, M. NUMANO, T.
AMAI, M. MIYASHITA, S. SAMATA AND Y. MATSUSHITA 225
SURFACE CHARACTERIZATION OF HEAT TREATED SILICON WAFERS D. M. LEE, D.
RUPRECHT, D. HYMES AND W. HUBER 237
STUDY OF TRANSITION METAL CONTAMINATION CAUSED BY SC-1 TREATMENT USING
TRXRF Y. MORI, K. UEMURA, K. SHIMANOE AND T. SAKON 248
CHAPTER 4 -- THIN FILMS, INTERFACES AND EPITAXY 261
INTRODUCTORY REMARKS -- THIN FILMS, INTERFACES AND EPITAXY T- 0.
SEDGWICK AND J. 0. BORLAND 2 63
INVITED: CLUSTER TOOLS -HARDWARE AND PROCESS INTEGRATION J. R. HAUSER
265
INVITED: CHEMISTRY OF SIH2CL2 ON SILICON SUR FACES: ADSORPTION SPECIES,
ADSORPTION AND DESORPTION KINETICS AND MODELING
OF
SI CVD GROWTH P. A. COON, M. B. ROBINSON, M. L. WISE, A. C. DILLON AND
S. M. GEORGE 277
XIII
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DECOMPOSITION OF POLY-SI/SI02 UNDER HYDROGEN PREBAKE IN A REDUCED
PRESSURE EPITAXIAL REACTOR M. Y. HONG, N. D. THEODORE, J. STEELE
AND Y-C. SEE 288
LOW TEMPERATURE ATMOSPHERIC PRESSURE CHEMICAL
VAPOR DEPOSITION FOR EPITAXIAL GROWTH OF SIGE BIPOLAR TRANSISTORS T. O.
SEDGWICK, J. N. BURGHARTZ
AND D. A. GRTITZMACHER 298
STRUCTURAL AND ELECTRICAL PROPERTIES OF POLYSILICON FILMS DEPOSITED AT 5
MBAR IN A RTP REACTOR B. SEMMAEHE, S. KADDOUR-KRIEGER, M. LEMITI,
D. BARBIER, S. FAYEULLE AND A. LAUGIER 311
A TWO-STEP POLYSILICON DEPOSITION PROCESS FOR GRADED DOPED GATES E.
IBOK, B. MOORE AND S. GARG 322
INVITED: THE LIMITATION OF EXTRINSIC DEFECT DENSITY ON THIN GATE OXIDE
SCALING IN VLSI DEVICES B. B. TRIPLETT 333
DIELECTRIC DEGRADATION OF SILICON DIOXIDE FILMS CAUSED BY METAL
CONTAMINATIONS M. TAKIYAMA, S. OHTSUKA, S. HAYASHI AND M. TACHIMORI 346
MICROSTRUCTURE, ELECTRICAL PROPETIES AND PASSI VATION OF DEFECTS AT THE
SILICON-SILICON-DIOXIDE INTERFACE A. CORREIA, D. BALLUTAUD AND J.-L.
MAURICE 358
STRUCTURE AND MORPHOLOGY OF D-DEFECTS IN CZ SI J-G. PARK, H. KIRK,
K-C. CHO, H-K. LEE, C-S. LEE AND G. A. ROZGONYI 370
A MODEL FOR ROOM-TEMPERATURE WET OXIDATION OF SILICON G. F. CEROFOLINI,
L. MEDA AND R. FALSTER 379
INVITED: SILICON-ON-INSULATOR TECHNOLOGY: OUTLOOK FOR BONDED WAFERS S.
S. IYER, T. 0. SEDGWICK, P. M. PITNER AND M. J. TEJWANI 391
XLV
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INTERFACIAL STRUCTURE OF BONDED SILICON WAFERS M. REICHE, U. G6SELE AND
Q.-Y. TONG 4 08 VOID FORMATION AND ANNIHILATION IN SILICON DIRECT WAFER
BONDING F. SECOO D ARAGONA AND H-D. CHIOU 420
CHARACTERIZATION OF THIN-FILM BESOI USING A CVD SIL-X-Y GEX BV ETCH STOP
C. A. DESMOND, C. E. HUNT AND T. WETTEROTH 432
EPITAXIAL GROWTH ON POROUS SI FOR A NEW BOND AND ETCH-BACK SOI N. SATO,
K. SAKAGUCHI, K. YAMAGATA, Y. FUJIYAMA AND T. YONEHARA 443
CHAPTER 5 -- SILICON-BASED MATERIALS FOR LIGHT EMISSION 455
INTRODUCTION REMARKS: SILICON-BASED MATERIALS FOR LIGHT EMISSION D. L.
CANHAM AND N. KOSHIDA 457
INVITED: LIGHT EMISSION IN SILICON N. MATSUMOTO 460
INVITED: LUMINESCENCE OF SILICON MATERIALS L. E. BRUS 470
INVITED: LIGHT EMISSION FROM POROUS SILICON UNDER PHOTO-AND
ELECTRO-EXCITATION A. BSIESY, J. C. VIAL, F. GASPARD, R. H^RINO, M.
LIGEON, F. MULLER
AND R. ROMESTAIN 475
INVITED: ERBIUM-DOPED SILICON FOR INTEGRATED
OPTICAL INTERCONNECTS L. C. KIMERLING, D. M. KOKER, B. ZHENG, F. Y. G.
REN AND J. MICHEL 486
INTENSE ROOM TEMPERATURE LIGHT EMISSION IN POROUS
SILICON: FROM LESS THAN 450 NM TO BEYOND 1.5 (IM P. M. FAUCHET, C. PENG,
L. TSYBESKOV, J. VANDYSHEV, A. DUBOIS, A. RAISANEN, T. E. ORLOWSKI,
L. J. BRILLSON, J. E. FOUQUET, S. L. DEXHEIMER, J. M. REHM, G. L.
MCLENDON, E. ETTEDGUI, Y. GAO, F. SEIFERTH AND S. K. KURINEC 499
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ELECTRONIC AND OPTOELECTRONIC ANALYSES OF VISIBLE LUMINESCENCE MECHANISM
OF POROUS SILICON H. KOYAMA, T. OGURO, T. OZAKI, Y. SUDA
AND N. KOSHIDA 511
WHAT S NEW WITH THERMALLY OXIDIZED POROUS SILICON? V. PETROVA-KOCH, T.
MUSCHIK, D. KOVALEV AND F. KOCH 523
IN-SITU X-RAY STUDY OF THE WETTING OF POROUS SILICON D. BELLET, G.
DOLINO, M. A. HORY, I. MIHALCESCU AND R. ROMESTAIN 533
OPTICALLY INDUCED ABSORPTION IN POROUS SILICON AND ITS APPLICATION TO
LOGIC GATES T. MATSUMOTO, T. FUTAGI, N. HASEGAWA, H. MIMURA, AND Y.
KANEMITSU 545
THEORY OF SPIN AND PHONON STRUCTURES IN OPTICAL
SPECTRA OF SI NANOCRYSTALS
T. TAKAGAHARA 552
LIGHT EMISSION AND RELATED MATERIALS PROPERTIES OF SILOXENE AND SI-BASED
ZEOLITES H. C. MOGUL, J. XU, A. J. STECKL, S. J. CLARSON,
AND C. L. HOFFMANN 563
PHYSICAL CHARACTERIZATION OF SILICON AND POROUS SILICON BASED
ELECTROLUMINESCENT DIODES P. A. BADOZ, L. GARCHERY AND A. HALIMAOUI 569
CHAPTER 6 -- POINT AND EXTENDED DEFECTS 57 5
INTRODUCTORY REMARKS - POINT AND EXTEND DEFECTS U. GOSELE AND W.
SCHR6LER 577
INVITED: SIMULATION OF DIFFUSION PROCESSES IN SILICON FOR ULSI
APPLICATIONS M. ORLOWSKI 579
EQUILIBRIUM CONCENTRATIONS OF INTRINSIC POINT DEFECTS IN SILICON
DETERMINED BY ZINC DIFFUSION H. BRACHT, N. A. STOLWIJK AND H. MEHRER 593
DIRECT MEASUREMENT OF SELF-INTERSTITIAL CONCEN TRATIONS IN GOLD
DIFFUSED SILICON A. DSLLER, M. SEIBT AND W. SOHRSTER 603
XVI
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SIMULATION OF BURIED LAYER EXPERIMENTS CONTAIN ING ALL FOUR DOPANT
SPECIES K. GHADERI, G. HOBLER, M. BUDIL, H. PSTZL, P. PICHLER, H.
RYSSEL, W. HANSCH, I. EISELE,
C. TIAN AND G. STINGEDER 613
POINT DEFECT DYNAMICS IN SILICON AND THE CON NECTION BETWEEN
MICRODEFECT FORMATION AND OPERATING CONDITIONS IN THE BULK GROWTH OF
SILICON
T. SINNO AND R. A. BROWN 625
DISTRIBUTION OF GROWN-IN CRYSTAL DEFECTS FORMED BY POINT DEFECT
DIFFUSION R. HABU, A. TOMIURA AND H. HARADA 635
INVITED: EBIC INVESTIGATIONS OF EXTENDED DEFECTS AND THEIR INTERACTIONS
WITH IMPURITIES P. R. WILSHAW AND T. S. FELL 647
CATHODOLUMINESCENCE AND EBIC STUDY ON DISLOCATIONS IN SI CRYSTALS T.
SEKIGUCHI, S. KUSANAGI, B. SHEN AND K. SUMINO 659
ON THE ELECTRICAL ACTIVITY OF OXYGEN-RELATED
EXTENDED DEFECTS IN SILICON J. VANHELLEMONT, E. SIMOEN, G. BOSNIAN, C.
CLAEYS, A. KANIAVA, E. GAUBAS, A. BLONDEEL
AND P. CLAUWS 670
OBSERVATION OF RING-OSF NUCLEI IN CZ-SI USING SHORT TIME ANNEALING AND
IR LIGHT SCATTERING TOMOGRAPHY K. MARSDEN, S. SADAMITSU, M. HOURAI, S.
SUMITA AND T. SHIGEMATSU 684
CHARACTERIZATION OF TRANSITION METAL-DOPED SILICON CRYSTALS PREPARED BY
FLOAT ZONE TECHNIQUE H. LEMKE 695
KINETICS OF DOPANT PRECIPITATION IN SILICON S. T. DUNHAM 711
SELF-INTERSTITIAL AGGLOMERATION IN ION-IMPLANTED SILICON M. SEIBT, J.
IMSCHWEILER AND H.-A. HEFNER 720
MORPHOLOGY CHANGE OF OXIDE PRECIPITATES IN CZ SILICON DURING TWO-STEP
ANNEALING K. SUEOKA, N. IKEDA, T. YAMAMOTO AND S. KOBAYASHI 732
XVIL
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INFLUENCE OF COOLING CONDITION DURING CRYSTAL GROWTH OF CZ-SI ON OXIDE
BREAKDOWN PROPERTY T. IWASAKI, Y. TSUMORI, K. NAKAI, H. HAGA, K. KOJIMA
AND T. NAKASHIZU 744
INTERACTION OF POINT AND EXTENDED DEFECTS IN SILICON: THEIR INFLUENCE ON
THE POLYCRYSTALLINE SILICON SUBSTRATE QUALITY FOR HIGH EFFICIENCY SOLAR
CELLS
S. PIZZINI, M. ACCIARRI, S. BINETTI, S. ACERBONI AND C. SAVIGNI 756
CHAPTER 7 -- GETTERING PHENOMENA 7 69
INTRODUCTORY REMARKS -- GETTERING PHENOMENA E. R. WEBER AND H. TSUYA 771
INVITED: GETTERING PHENOMENA IN SILICON D. GILLES AND H. EWE 77 2
INVITED: GETTERING TECHNIQUES OF HEAVY METAL IMPURITIES IN SILICON M.
SANO, S. SUMITA, T. SHIGEMATSU AND N. FUJINO 784
BASIC MECHANISM OF INTERNAL GETTERING: HETEROGENEOUS
PRECIPITATION OF COBALT AND NICKEL IN CZ-SILICON H. EWE, D. GILLES, S.
K. HAHN, M. SEIBT
AND W. SCHRATER 7 96
GETTERING OF METAL IMPURITIES BY CAVITIES IN SILICON S. M. MYERS, D. M.
FOLLSTAEDT, D. M. BISHOP AND J. W. MEDERNACH 808
IRON GETTERING EFFICIENCY BY A POLYSILICON LAYER IN P-TYPE CZ SILICON D.
M. LEE, K. MISHRA, W. HUBER, S. CHEVACHAROENKUL, S. P. CHOI AND I. H.
DOH 820
INVITED: GETTERING PHENOMENA IN EPITAXIAL SILICON STRUCTURES F. G.
KIRSCHT 831
ON
THE ORIGIN OF INTERNAL GETTERING SUPPRESSION IN LOW CARBON CZ SILICON BY
RAPID THERMAL ANNEALING C. MADDALON-VINANTE, J. P. VALLARD AND D.
BARBIER 844
ULTRASOUND TREATMENT OF CZ-SI WITH RING DEFECTS S. OSTAPENKO, N. IKEDA
AND F. SHIMURA 856
XVIJI
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INVITED: LOW TEMPERATURE IMPURITY GETTERING FOR GIGA-SCALE INTEGRATED
CIRCUIT TECHNOLOGY G. A. ROZGONYI, S. KOVESHNIKOV AND A. AGARWAL 868
EFFECTS OF INTRINSIC GETTERING ON RAM CORRUPTION AND DEVICE YIELD OF A
CMOS PROCESS L. A. CERRA AND H-D. CHIOU 884
COMPUTER SIMULATION OF THE INFLUENCE OF POINT AND EXTENDED DEFECTS ON
THE PRECIPITATION OF OXYGEN DURING RAPID THERMAL PROCESSING J.
ESFANDYARI, S. SENKADER, G. HOBLER,
H. POTZL AND B. MURPHY 896
CONTROLLING THE OXYGEN PRECIPITATION IN NON-EPI WAFERS TO PREVENT CHARGE
LEAKAGE FROM DRAM TRENCH CAPACITORS A. E. STEPHENS 908
DIFFUSION-SEGREGATION EQUATION AND SIMULATION
OF
THE DIFFUSION-SEGREGATION PHENOMENA T. Y. TAN, R. GAFITEANU AND U. M.
GOSELE 920
CHAPTER 8 -- INTEGRATED CIRCUIT PROCESS INTEGRATION 931
INTRODUCTORY REMARKS -- INTEGRATED CIRCUIT PROCESS INTEGRATION R. SIVAN
AND K. YAMABE 933
INVITED: MICRODEFECTS AND IMPACT ON IC PROCESS INTEGRATION A. OHSAWA, A.
HARA, M. AOKI, M. KOIZUKA AND T. FUKUDA 93 6
INVITED: MATERIALS REQUIREMENTS FOR FUTURE SEMICONDUCTOR TECHNOLOGY T.
E. SEIDEL, P. K. VASUDEV AND T. STANLEY 947
INVITED: REVIEW OF X-RAY LITHOGRAPHY G. K. CELLER 962
GATE OXIDE QUALITY RELATED TO BULK PROPERTIES AND ITS INFLUENCE ON DRAM
DEVICE PERFORMANCE R. WINKLER AND G. BEHNKE 973
XLK
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N+-P JUNCTION LEAKAGE CURRENT GENERATED BY MICRODEFECTS IN DENUDED ZONE
OF 64MB DRAM SILICON SUBSTRATES M. HORIKAWA, T. MIZUTANI, T. SUZUKI AND
K. ARAI 987
EVALUATION OF PN JUNCTION LEAKAGE CURRENT IN VARIOUS IG PROCESSED SI
WAFERS H. ABE, Y. MURAKAMI, H. KOYA, I. SUZUKI
AND H. SUGA 997
A DISLOCATION FORMATION MODEL OF TRENCH-INDUCED DISLOCATIONS (TIDS) IN
DYNAMIC RANDOM ACCESS MEMORIES (DRAMS) M. DELLITH, G. R. BOOKER, B. 0.
KOLBESEN,
W. BERGHOLZ AND F. GELSDORF 1008
DEGRADATION OF SILICON NITRIDE INTEGRITY DURING
COBALT SILICIDE PROCESSING G. R. HUECKEL, T. NGUYEN AND II, L. HO 1020
EFFECT OF OXYGEN ON POINT DEFECT INJECTION DURING SILICIDATION OF
TITANIUM J, CHEN, H. G. ROBINSON, S. B. HERNER AND K. S. JONES 1029
EFFECTS OF LOW-DOSE SILICON, CARBON AND OXYGEN IMPLANTATION DAMAGE ON
DIFFUSION OF PHOSPHORUS IN SILICON S. CHAUDHRY AND M. E. LAW 1041
SIMULATION OF TEMPERATURE DISTRIBUTIONS DURING FAST THERMAL PROCESSING
M. SCHREMS, A. YAMAMOTO, Y. MIKATA, K. USUDA AND K. NAKAO 1050
CHAPTER 9 -- DIAGNOSTIC ANALYSIS 10 65
INTRODUCTORY REMARKS - - DIAGNOSTIC ANALYSIS T. J. SHAFFNER AND S.
KAWADO 1067
INVITED: CONTACTLESS SEMICONDUCTOR MEASUREMENTS D. K. SCHRODER 1071
NON-CONTACTING AND NON-DESTRUCTIVE MEASUREMENTS OF PHOTOCONDUCTIVITY
TRANSIENT USING UV HIM-WAVE TECHNIQUE---EVALUATION OF DZ WIDTH,
EPITAXIAL LAYER CONTAMINATION AND SURFACE PROPERTY OF SI WAFER
Y.-I. OGITA, K. YAKUSHIJI AND N. TATE 1083
XX
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PHOTOLUMINESCENCE MEASUREMENTS OF TRACE AMOUNTS OF TRANSITION METAL
IMPURITIES IN SILICON CRYSTAL M. NAKAITMRA AND T. SUZUKI 1093
MAPPING OF DEFECT RELATED SILICON BULK AND
SURFACE PROPERTIES WITH THE ELYMAT TECHNIQUE J. CARSTENSEN, W- LIPPIK
AND H. FFILL 1105
DETECTION OF PROCESS INDUCED DISLOCATIONS IN SILICON J. L. BENTON, G. S.
HIGASHI AND T. BOONE 1117
INVITED: DETECTION OF DEFECTS IN SILICON USING SYNCHROTRON RADIATION Y.
SUGITA, S. IIDA AND H. KAWATA 1123
IMAGING-PLATE PLANE-WAVE X-RAY TOPOGRAPHY AND ITS APPLICATION TO
CHARACTERIZATION OF LATTICE
DISTORTION IN AS-GROWN SILICON Y. KUDO, K. Y. LIU, S. KOJIMA, S. KAWADO,
AND T. ISHIKAWA 1135
DISTRIBUTION OF MICROCRYSTALS IN AMORPHOUS SI02 ON SI(001) SURFACE I.
TAKAHASHI AND J. HARADA 1147
INVITED: MICROROUGHNESS OF SILICON WAFERS W. M. BULLIS 1156
THE EFFECT OF H2 ANNEALING ON THE SI SURFACE AND ITS USE IN THE STUDY OF
ROUGHENING DURING WET
CHEMICAL CLEANING S. VERHAVERBEKE, T. FUTATSUKI, R. MESSOUSSI AND T.
OHMI 1170
SURFACE ROUGHNESS OF SI WAFERS: CORRELATING AFM
AND HAZE MEASUREMENTS I. J. MALIK, K. VEPA, S. PIROOZ, A. C. MARTIN AND
L. W. SHIVE 1182
APPENDICES
APPENDIX
1 - AUTHOR INDEX
APPENDIX 2 - SUBJECT INDEX
X:CI
|
| any_adam_object | 1 |
| author_GND | (DE-588)129513075 |
| building | Verbundindex |
| bvnumber | BV013588355 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 3100 |
| ctrlnum | (OCoLC)31497289 (DE-599)BVBBV013588355 |
| dewey-full | 621.3 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3 |
| dewey-search | 621.3 |
| dewey-sort | 3621.3 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Electrochemical Society: Proceedings</subfield><subfield code="v">1994,10</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Circuits intégrés à très grande échelle</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicium</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumhalbleiter</subfield><subfield code="0">(DE-588)4274465-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1994</subfield><subfield code="z">San Francisco Calif.</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Siliciumhalbleiter</subfield><subfield code="0">(DE-588)4274465-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Huff, Howard R.</subfield><subfield code="e">Sonstige</subfield><subfield code="0">(DE-588)129513075</subfield><subfield code="4">oth</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">International Symposium on Silicon Materials Science and Technology</subfield><subfield code="n">7</subfield><subfield code="d">1994</subfield><subfield code="c">San Francisco, Calif.</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)5175519-1</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Electrochemical Society: Proceedings</subfield><subfield code="v">1994,10</subfield><subfield code="w">(DE-604)BV001900941</subfield><subfield code="9">1994,10</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">GBV Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009280323&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-009280323</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1994 San Francisco Calif. gnd-content |
| genre_facet | Konferenzschrift 1994 San Francisco Calif. |
| id | DE-604.BV013588355 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:48:29Z |
| institution | BVB |
| institution_GND | (DE-588)5175519-1 |
| isbn | 1566770424 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009280323 |
| oclc_num | 31497289 |
| open_access_boolean | |
| owner | DE-703 |
| owner_facet | DE-703 |
| physical | XXIII, 1218 S. Ill., graph. Darst. |
| publishDate | 1994 |
| publishDateSearch | 1994 |
| publishDateSort | 1994 |
| publisher | Electrochemical Soc. |
| record_format | marc |
| series | Electrochemical Society: Proceedings |
| series2 | Electrochemical Society: Proceedings |
| spelling | Semiconductor silicon 1994 proceedings of the Seventh International Symposium on Silicon Materials Science and Technology ed. H. R. Huff ... Pennington, NJ Electrochemical Soc. 1994 XXIII, 1218 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electrochemical Society: Proceedings 1994,10 Circuits intégrés à très grande échelle ram Semiconducteurs ram Silicium ram Semiconductors Congresses Silicon Congresses Siliciumhalbleiter (DE-588)4274465-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1994 San Francisco Calif. gnd-content Siliciumhalbleiter (DE-588)4274465-9 s DE-604 Huff, Howard R. Sonstige (DE-588)129513075 oth International Symposium on Silicon Materials Science and Technology 7 1994 San Francisco, Calif. Sonstige (DE-588)5175519-1 oth Electrochemical Society: Proceedings 1994,10 (DE-604)BV001900941 1994,10 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009280323&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Semiconductor silicon 1994 proceedings of the Seventh International Symposium on Silicon Materials Science and Technology Electrochemical Society: Proceedings Circuits intégrés à très grande échelle ram Semiconducteurs ram Silicium ram Semiconductors Congresses Silicon Congresses Siliciumhalbleiter (DE-588)4274465-9 gnd |
| subject_GND | (DE-588)4274465-9 (DE-588)1071861417 |
| title | Semiconductor silicon 1994 proceedings of the Seventh International Symposium on Silicon Materials Science and Technology |
| title_auth | Semiconductor silicon 1994 proceedings of the Seventh International Symposium on Silicon Materials Science and Technology |
| title_exact_search | Semiconductor silicon 1994 proceedings of the Seventh International Symposium on Silicon Materials Science and Technology |
| title_full | Semiconductor silicon 1994 proceedings of the Seventh International Symposium on Silicon Materials Science and Technology ed. H. R. Huff ... |
| title_fullStr | Semiconductor silicon 1994 proceedings of the Seventh International Symposium on Silicon Materials Science and Technology ed. H. R. Huff ... |
| title_full_unstemmed | Semiconductor silicon 1994 proceedings of the Seventh International Symposium on Silicon Materials Science and Technology ed. H. R. Huff ... |
| title_short | Semiconductor silicon 1994 |
| title_sort | semiconductor silicon 1994 proceedings of the seventh international symposium on silicon materials science and technology |
| title_sub | proceedings of the Seventh International Symposium on Silicon Materials Science and Technology |
| topic | Circuits intégrés à très grande échelle ram Semiconducteurs ram Silicium ram Semiconductors Congresses Silicon Congresses Siliciumhalbleiter (DE-588)4274465-9 gnd |
| topic_facet | Circuits intégrés à très grande échelle Semiconducteurs Silicium Semiconductors Congresses Silicon Congresses Siliciumhalbleiter Konferenzschrift 1994 San Francisco Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009280323&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001900941 |
| work_keys_str_mv | AT huffhowardr semiconductorsilicon1994proceedingsoftheseventhinternationalsymposiumonsiliconmaterialsscienceandtechnology AT internationalsymposiumonsiliconmaterialsscienceandtechnologysanfranciscocalif semiconductorsilicon1994proceedingsoftheseventhinternationalsymposiumonsiliconmaterialsscienceandtechnology |