Physics of amorphous semiconductors:
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Singapore [u.a.]
World Scientific [u.a.]
1999
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Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | XIV, 418 S. graph. Darst. |
ISBN: | 9810213816 |
Internformat
MARC
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300 | |a XIV, 418 S. |b graph. Darst. | ||
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Datensatz im Suchindex
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adam_text | PHYSICS OF AMORPHOUS SEMICONDUCTORS KAZUO MORIGAKI HIROSHIMA INSTITUTE
OF TECHNOLOGY JAPAN S WORLD SCIENTIFIC FFIFO IMPERIAL COLLEGE PRESS
CONTENTS PREFACE V ACKNOWLEDGEMENT IX 1 INTRODUCTION 1 2 DISORDER AND
GLASS TRANSITION 7 2.1 DEFINITION OF DISORDER 7 2.2 GLASS TRANSITION 9
2.3 GLASS FORMATION 14 3 PREPARATION 23 3.1 RAPID QUENCHING FROM THE
LIQUID PHASE 23 3.2 RAPID CONDENSATION FROM THE GAS PHASE 24 3.2.1
PHYSICAL VAPOUR DEPOSITION 24 3.2.2 CHEMICAL VAPOUR DEPOSITION 25 4
STRUCTURE 29 4.1 DIFFRACTION PATTERN 30 4.2 MODELS FOR THE AMORPHOUS
STRUCTURE 33 4.2.1 TETRAHEDRALLY BONDED SEMICONDUCTORS: A-SI AND A-GE 33
4.2.2 CHALCOGENIDE GLASSES 37 4.3 MEDIUM-RANGE ORDER OF SMALL-ANGLE
X-RAY SCATTERING 39 4.4 COMPUTER SIMULATION 42 4.4.1 MONTE CARLO METHOD
43 XI XLL CONTENTS 4.4.2 MOLECULAR-DYNAMICS METHOD 45 5 ELECTRONIC
STATES 51 5.1 NATURE OF CONDUCTION AND VALENCE BANDS AND TAIL STATES 51
5.2 ANDERSON LOCALIZATION 60 6 GAP STATES AND DEFECTS 67 6.1 GAP STATES
67 6.2 MEASUREMENTS OF DEFECTS 68 6.3 DANGLING BONDS IN A-SI AND A-SI:H
84 6.4 DEFECTS IN CHALCOGENIDE GLASSES 92 7 TRANSPORT 99 7.1 ELECTRICAL
CONDUCTION NEAR THE MOBILITY EDGE . . . . 99 7.2 THE SCALING THEORY OF
ANDERSON LOCALIZATION . . . . 102 7.3 CONDUCTIVITY TAKING INTO ACCOUNT
MULTIPLE SCATTER- ING - DEVIATION OF CONDUCTIVITY FROM THE BOLTZMANN
CONDUCTIVITY 105 7.4 TRANSITION FROM LOCALIZATION TO DEREALIZATION AND
CONDUCTIVITY 108 7.5 BAND CONDUCTION 109 7.6 HOPPING CONDUCTION 114
7.6.1 NEAREST-NEIGHBOR HOPPING 114 7.6.2 VARIABLE-RANGE HOPPING 115 7.7
AC CONDUCTION 119 7.8 HALL EFFECT 123 7.9 THERMOELECTRIC POWER 125 7.10
RELATIONSHIP BETWEEN THE ELECTRICAL CONDUCTIVITY AND THE THERMOELECTRIC
POWER 126 7.11 ELECTRON-PHONON INTERACTION AND ELECTRICAL CONDUCTION 129
7.12 DISPERSIVE TRANSPORT 130 8 OPTICAL PROPERTIES 137 8.1 OPTICAL
ABSORPTION 137 8.1.1 BAND TO BAND TRANSITION AND ABSORPTION EDGE 138
8.1.2 HIGH ENERGY ABSORPTION 141 8.1.3 TAIL ABSORPTION 142 CONTENTS XIII
8.1.4 THEORETICAL APPROACH TO THE EXPONENTIAL TAIL 149 8.2
PHOTOLUMINESCENCE 153 8.2.1 INTRATRANSITION WITHIN THE LOCALIZED CENTRE
. 153 8.2.2 PHOTOLUMINESCENCE DUE TO RADIATIVE RECOMBI- NATION BETWEEN
ELECTRONS AND HOLES 158 8.2.3 PHOTOLUMINESCENCE DUE TO RADIATIVE
RECOMBI- NATION OF EXCITONS 170 9 RECOMBINATION 173 9.1 GEMINATE PAIR
RECOMBINATION 173 9.2 NONGEMINATE PAIR RECOMBINATION 174 9.3
NONRADIATIVE RECOMBINATION 175 9.4 EXCITON RECOMBINATION 178 9.5
OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR) . 179 9.6 PHOTOCONDUCTIVITY
191 9.6.1 PHOTOCONDUCTION . 191 9.6.2 BASIC PROCESSES IN
PHOTOCONDUCTION 193 9.6.3 TEMPERATURE DEPENDENCE OF PHOTOCONDUCTIVITY203
9.6.4 SPIN-DEPENDENT PHOTOCONDUCTIVITY 210 10 ELECTRON-PHONON
INTERACTION AND SELF-TRAPPING OF CARRIERS 217 10.1 SELF-TRAPPING OF
CARRIERS 217 10.2 SELF-TRAPPING OF HOLES IN A-SI0 2 AND A-SI:H 220 10.3
SMALL POLARONS 227 11 LIGHT-INDUCED PHENOMENA 231 11.1 A-SI:H 231 11.1.1
GENERAL ASPECTS OF LIGHT-INDUCED PHENOMENA IN A-SI:H 231 11.1.2
MECHANISMS FOR THE LIGHT-INDUCED DEFECT CRE- ATION IN A-SI:H 235 11.1.3
ANNEALING PROCESSES OF THE LIGHT-INDUCED DE- FECTS 247 11.1.4
LIGHT-INDUCED STRUCTURAL CHANGE 254 11.2 CHALCOGENIDE GLASSES 255 XIV
CONTENTS 11.2.1 GENERAL ASPECTS 255 11.2.2 PHOTODARKENING AND
PHOTOSTRUCTURAL CHANGE 256 11.2.3 LIGHT-INDUCED METASTABLE DEFECTS 259
11.2.4 LIGHT-INDUCED PHENOMENA AND AMORPHOUS STRUCTURES 266 12 THERMAL
EQUILIBRIUM PROCESSES AND DEFECT FORMATION MECHANISMS 269 12.1 THERMAL
EQUILIBRIUM PROCESSES 269 12.2 DEFECT FORMATION MECHANISMS 278 12.3
RELAXATION PROCESSES FOR ANNEALING OF DANGLING BONDS 288 13 ARTIFICIAL
MATERIALS 295 13.1 INTRODUCTION 295 13.2 ENERGY LEVELS IN THE
SUPERLATTICES AND BAND-EDGE MODULATED MULTILAYERS 298 13.2.1
SUPERLATTICES 298 13.2.2 BAND-EDGE MODULATED MULTILAYERS 300 13.3 BASIC
PROPERTIES OF THE SUPERLATTICES AND THE BAND- EDGE MODULATED MULTILAYERS
301 13.3.1 SUPERLATTICES 301 13.3.2 BAND-EDGE MODULATED MULTILAYERS 310
14 SUMMARY OF SPECIFIC MATERIALS 317 14.1 A-SI:H AND RELATED MATERIALS
317 14.1.1 HYDROGEN-RELATED PROPERTIES 317 14.1.2 GENERAL ASPECTS OF
RECOMBINATION PROCESSES AND GAP STATES IN A-SI:H 326 14.1.3 DOPING 354
14.1.4 ALLOYS 361 14.2 CHALCOGENIDE GLASSES 367 14.2.1 GENERAL FEATURES
367 14.2.2 ELECTRONIC PROPERTIES 368 REFERENCES 383 INDEX 411
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any_adam_object | 1 |
author | Morigaki, Kazuo |
author_facet | Morigaki, Kazuo |
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author_sort | Morigaki, Kazuo |
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building | Verbundindex |
bvnumber | BV013240154 |
classification_rvk | UP 3160 |
ctrlnum | (OCoLC)257642419 (DE-599)BVBBV013240154 |
discipline | Physik |
format | Book |
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id | DE-604.BV013240154 |
illustrated | Illustrated |
indexdate | 2024-07-09T18:42:17Z |
institution | BVB |
isbn | 9810213816 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009022801 |
oclc_num | 257642419 |
open_access_boolean | |
owner | DE-355 DE-BY-UBR DE-20 DE-11 |
owner_facet | DE-355 DE-BY-UBR DE-20 DE-11 |
physical | XIV, 418 S. graph. Darst. |
publishDate | 1999 |
publishDateSearch | 1999 |
publishDateSort | 1999 |
publisher | World Scientific [u.a.] |
record_format | marc |
spelling | Morigaki, Kazuo Verfasser aut Physics of amorphous semiconductors Kazuo Morigaki Singapore [u.a.] World Scientific [u.a.] 1999 XIV, 418 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Amorpher Halbleiter (DE-588)4001756-4 gnd rswk-swf Amorpher Halbleiter (DE-588)4001756-4 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009022801&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Morigaki, Kazuo Physics of amorphous semiconductors Amorpher Halbleiter (DE-588)4001756-4 gnd |
subject_GND | (DE-588)4001756-4 |
title | Physics of amorphous semiconductors |
title_auth | Physics of amorphous semiconductors |
title_exact_search | Physics of amorphous semiconductors |
title_full | Physics of amorphous semiconductors Kazuo Morigaki |
title_fullStr | Physics of amorphous semiconductors Kazuo Morigaki |
title_full_unstemmed | Physics of amorphous semiconductors Kazuo Morigaki |
title_short | Physics of amorphous semiconductors |
title_sort | physics of amorphous semiconductors |
topic | Amorpher Halbleiter (DE-588)4001756-4 gnd |
topic_facet | Amorpher Halbleiter |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009022801&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
work_keys_str_mv | AT morigakikazuo physicsofamorphoussemiconductors |