Extended abstracts of the 1995 International Conference on Solid State Devices and Materials: August 21 - 24, 1995, Osaka
Gespeichert in:
| Körperschaft: | |
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Tokyo
Japan Soc. of Applied Physics
1995
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXXX, 1104 S. Ill., graph. Darst. |
| ISBN: | 4930813646 |
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| 245 | 1 | 0 | |a Extended abstracts of the 1995 International Conference on Solid State Devices and Materials |b August 21 - 24, 1995, Osaka |
| 264 | 1 | |a Tokyo |b Japan Soc. of Applied Physics |c 1995 | |
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| adam_text | IMAGE 1
EXTENDED ABSTRACTS OF
THE 1995 INTERNATIONAL CONFERENCE ON
SOLID STATE DEVICES AND MATERIALS
AUGUST 21-24, 1995 OSAKA
INTERNATIONAL HOUSE, OSAKA
SPONSORED BY
THE JAPAN SOCIETY OF APPLIED PHYSICS
IN COOPERATION WITH
THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS OF
JAPAN IEEE ELECTRON DEVICES SOCIETY IEEE TOKYO SECTION THE INSTITUTE OF
ELECTRICAL ENGINEERS OF JAPAN
THE ELECTROCHEMICAL SOCIETY OF JAPAN THE INSTITUTE OF TELEVISION
ENGINEERS OF JAPAN
IMAGE 2
CONTENTS
AUGUST 21, MONDAY
MAIN HALL
A-0: OPENING SESSION (9:50-12:25)
9:50 (0) WELCOME ADDRESS C. HAMAGUCHI, ORGANIZING COMMITTEE CHAIRPERSON
10:00 (1) FOUR-TERMINAL DEVICE ELECTRONICS FOR INTELLIGENT SILICON
INTEGRATED SYSTEMS (INVITED) T. OHMI AND T. SHIBATA, TOHOKU UNIV., JAPAN
1
10:40 (2) THE CONTROL OF OPTICAL BEAMS IN IMAGING AND HIGH DATA RATE
FIBER COMMUNICATIONS (INVITED)
A. YARIV, CALIFORNIA INST. TECH., U.S.A 5
11:30 (3) 300MM IMPLEMENTATION (INVITED) F. ROBERTSON, SEMATECH, U.S.A 7
12:10 (4) SSDM AWARDS PRESENTATION
ROOM A
SYMPOSIUM 1-1: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS HI
FORMATION AND CHARACTERIZATION OF INSULATING FILMS I (13:50-15:40)
13:50 (1) THE ROLE OF THERMODYNAMICS IN DETERMINING THE SHORT RANGE
ORDER IN AMORPHOUS INSULATING FILMS (INVITED)
F.W. SMITH, THE CITY UNIV. NEW YORK, U.S.A 10
14:20 (2) IN-SITU OBSERVATION OF OXYGEN EXPOSED HYDROGEN TERMINATED
SILICON SURFACES H. OGAWA, K. ISHIKAWA, M, AOKI*, S. FUJIMURA, N.
UENO**, Y. HORIIKE*** AND Y. HARADA**, FUJITSU, *UNIV. TOKYO, **CHIBA
UNIV. AND ***TOYO UNIV., JAPAN 13 14:40 (3) STUDY ON OXIDATION OF
SI(100)-2XL SURFACES BY SCANNING TUNNELING MICROSCOPY/SCANNING
TUNNELING SPECTROSCOPY H. IKEGAMI, K. OHMORI, H. IKEDA, H. IWANO, S.
ZAIMA AND Y. YASUDA, NAGOYA UNIV., JAPAN 16
15:00 (4) INTERFACE STATES AT ULTRATHIN CHEMICAL OXIDE/SILICON
INTERFACES OBTAINED FROM MEASUREMENTS OF XPS SPECTRA UNDER BIASES H.
KOBAYASHI, Y. YAMASHITA, K. NAMBA, Y. NAKATO AND Y. NISHIOKA*, OSAKA
UNIV., AND *TEXAS INSTRUMENTS JAPAN, JAPAN 19
15:20 (5) OBSERVATION OF OXIDE THICKNESS DEPENDENT INTERFACE ROUGHNESS
IN SI MOS STRUCTURE J. KOGA, S. TAKAGI AND A. TORIUMI, TOSHIBA, JAPAN 22
SYMPOSIUM 1-2: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III
FORMATION AND CHARACTERIZATION OF INSULATING FILMS II (16:00-17:40)
16:00 (1) THEORETICAL ANALYSIS OF OXYGEN-EXCESS DEFECTS IN SI02 THIN
FILM BY MOLECULAR ORBITAL METHOD T. KANASHIMA, M. OKUYAMA AND Y.
HAMAKAWA, OSAKA UNIV., JAPAN 25
16:20 (2) THE VALENCE BAND ALIGNMENT AT ULTRA-THIN SIO2/SI(100)
INTERFACES DETERMINED BY HIGHRESOLUTION X-RAY PHOTOELECTRON SPECTROSCOPY
J.L. ALAY, M. FUKUDA, K. NAKAGAWA, S. YOKOYAMA AND M. HIROSE, HIROSHIMA
UNIV.,
JAPAN 28
16:40 (3) A NEW LOW-TEMPERATURE OXIDATION TECHNIQUE BY GAS CLUSTER ION
BEAMS M. AKIZUKI*, J. MATSUO, S. OGASAWARA*, M. HARADA*, A. DOI* AND I.
YAMADA, KYOTO UNIV. AND *SANYO ELEC, JAPAN 31
XVU
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17:00 (4) LOW-THERMAL-BUDGET, PROCESS-CONTROLLED MONOLAYER LEVEL
INCORPORATION OF NITROGEN INTO ULTRA-THIN GATE DIELECTRIC STRUCTURES:
APPLICATIONS TO MOS DEVICES
G. LUCOVSKY, D.R. LEE, S.V. HATTANGADY, H. NIIMI, C. PARKER AND J.R.
HAUSER, NORTH CAROLINA STATE UNIV., U.S.A 34
17:20 (5) CLARIFICATION OF NITRIDATION EFFECT ON OXIDATION METHODS T.
KUROI, S. SHIRAHATA, Y. OKUMURA, S. SHIMIZU, A. TERAMOTO, M. ANMA, M.
INUISHI AND T. HIRAO, MITSUBISHI ELEC, JAPAN 37
ROOM B
B-L: POWER DEVICES AND ADVANCED STRUCTURES (13:50-16:00)
13:50 (1) SEMICONDUCTOR SILICON CARBIDE FOR POWER ELECTRONIC APPLICATION
(INVITED) H. MATSUNAMI AND A. ITOH, KYOTO UNIV., JAPAN 40
14:20 (2) SUPER-J8 BIPOLAR TRANSISTOR EQUIVALENT IN CMOS TECHNOLOGY G.
KIM, M.-K. KIM, W. KIM AND A. BOUZERDOUM, SEOUL NAT I UNIV., KOREA 43
14:40 (3) CVD-EPI MOS TRANSISTORS WITH A 65 NM VERTICAL CHANNEL F.
HOFMANN, W.H. KRAUTSCHNEIDER, L. RISCH AND H. SCHAEFER, SIEMENS, F.R.G
46 15:00 (4) EFFECTS OF PIXEL ELECTRODE STRUCTURE ON IMAGE LAG OF
STACK-CCD IMAGE SENSOR
E. OBA, R. MIYAGAWA, H. IHARA, M. SASAKI, H. YAMASHITA, H. TANGO, O.
YOSHIDA AND S. MANABE, TOSHIBA, JAPAN 49
15:20 (5) POLYSILICON THIN FILM TRANSISTORS WITH PN JUNCTION GATE B.-H.
MIN, C.-M. PARK AND M.-K. HAN, SEOUL NAT I UNIV., KOREA 52
15:40 (6) IN-SITU DOPED CMOS POLYSILICON THIN FILM TRANSISTORS B.-H.
MIN, C.-M. PARK, B.-S. BAE* AND M.-K. HAN, SEOUL NAT I UNIV. AND
*SAMSUNG, KOREA 55
B-2: FLASH MEMORIES (16:20-17:40)
16:20 (1) A NOVELHIGH DENSITY EEPROM CELLS USING POLY-GATE HOLE (POLE)
STRUCTURE SUITABLE FOR LOW POWER APPLICATIONS M. TAKEBUCHI, J. NODA, D.
TOHYAMA*, S. UENO, K. OSARI AND K. YOSHIKAWA, TOSHIBA AND *TOSHIBA
MICROELECTRONICS, JAPAN 58
16:40 (2) A FLASH MEMORY TECHNOLOGY FOR OPERATING VOLTAGE REDUCTION AND
SELF-CONVERGENCE OF THE OVER ERASED CELLS
S. SATO, T. TANIGAMI, K. HAKOZAKI, N. SHINMURA, K. IGUCHI AND K.
SAKIYAMA, SHARP, JAPAN 61
17:00 (3) COMPARISON OF OVER ERASE SUSCEPTIBILITY AND CYCLING
RELIABILITY BETWEEN CHANNEL ERASE AND BITLINE ERASE IN FLASH EEPROM
J.-T. HSU AND S. SHUMWAY, NAT I SEMICONDUCTOR, U.S.A 64
17:20 (4) HIGH-RELIABILITY PROGRAMMING METHOD SUITABLE FOR FLASH
MEMORIES OF MORE THAN 256 MB N. MIYAMOTO, T. KAWAHARA*, S. SAEKI, Y.
JYOUNO*, M. KATO* AND K. KIMURA*, HITACHI DEVICE ENG., AND *HITACHI,
JAPAN 67
ROOM C
SYMPOSIUM IV: ADVANCED METALLIZATION FOR SEMICONDUCTOR DEVICES
(13:50-18:00)
13:50 (1) THIN FILM CHALLENGES OF THE SIA NATIONAL TECHNOLOGY ROADMAP
(INVITED) D.B. FRASER, INTEL, U.S.A 71
14:20 (2) DISSOCIATIVE ADSORPTION MECHANISM OF PRODUCT GAS IN W-CVD
REVEALED BY MOLECULAR ORBITAL CALCULATION AND ITS DETERMINANT ROLE IN
FILLING FEATURES Y. TAKEMURA, J. USHIO, T. MARUIZUMI, R. IRIE AND N.
KOBAYASHI, HITACHI, JAPAN 73
14:40 (3) SURFACE REACTION CONTROLLED W-CVD TECHNOLOGY FOR 0.1-/UM
LOW-RESISTIVE, ENC ROACHMENT-FREE CMOS-FET APPLICATIONS Y. NAKAMURA, N.
KOBAYASHI, D. HISAMOTO, K. UMEDA AND R. NAGAI, HITACHI, JAPAN 76
15:00 (4) W AS A BIT LINE INTERCONNECTION IN COB STRUCTURED DRAM AND
FEASIBLE DIFFUSION BARRIER LAYER J.S. BYUN, J.K. KIM, J.W. PARK AND J.J.
KIM, LG SEMICON, KOREA 79
XVUJ
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15:40 (5)
16:10 (6)
16:30 (7)
16:50 (8)
17:10 (9)
17:40 (10)
FORMATION OF METAL/SILICON CONTACTS FOR ULSI AND INDUCED DEFECTS BY
SILICIDATION (INVITED)
Y. YASUDA AND S. ZAIMA, NAGOYA UNIV., JAPAN 82
NOVEL LOW LEAKAGE AND LOW RESISTANCE TITANIUM SALICIDE TECHNOLOGY WITH
RECOIL NITROGEN ACHIEVED BY SILICIDATION AFTER ION IMPLANTATION THROUGH
CONTAMINATION-RESTRAIN ED OXYGEN FREE LPCVD-NITRIDE LAYER (SICRON) H.
KOTAKI, M. NAKANO, S. HAYASHIDA, T. MATSUOKA, S. KAKIMOTO, A. NAKANO, K.
UDA
AND Y. SATO, SHARP, JAPAN 85
LOW DAMAGE IN-SITU CONTACT CLEANING METHOD BY A HIGHLY DENSE AND
DIRECTIONAL ECR PLASMA I.S. PARK, M. YOON, H.-D. LEE, C.S. PARK, Y.J.
WEE, G.H. CHOI, K.Y. OH, S.I. LEE AND M.Y. LEE, SAMSUNG, KOREA 88
IN SITU STUDY OF ELECTROMIGRATION IN SUBMICRON-WIDE LAYERED AL-0.5%CU
LINES BY SIDEVIEW TEM OBSERVATION H. OKABAYASHI, M. KOMATSU* AND H.
MORI*, NEC AND *OSAKA UNIV., JAPAN 91
COPPER INTERCONNECTS FABRICATED BY DRY ETCHING PROCESS (INVITED) Y.
IGARASHI, T. YAMANOBE AND T. ITO, OKI ELEC. IND., JAPAN 94
DOUBLE-LEVEL CU INLAID INTERCONNECTS WITH SIMULTANEOUSLY FILLED
VIA-PLUGS G. MINAMIHABA, Y. SHIMOOKA, H. TAMURA, T. IIJIMA, T. KAWANOUE,
H. HIRABAYASHI, N. SAKURAI, H. OOKAWA, T. OBARA, H. EGAWA, T. IDAKA, T.
KUBOTA, T. SHIMIZU, M. KOYAMA, G. OOSHIMA AND K. SUGURO, TOSHIBA, JAPAN
97
ROOM D
D-L: TRANSPORT PROPERTIES (13:50-16:00)
13:50 (1) TERAHERTZ QUANTUM TRANSPORT IN SEMICONDUCTOR SUPERLATTICES AND
QUANTUM WELLS (INVITED) S.J. ALLEN, U. BHATTACHARYA, K.L. CAMPMAN, J.
GALAN*, A.C. GOSSARD, J.P. KAMINSKI, B.J. KEAY, K.D. MARANOWSKI, M.J.M.
RODWELL AND S. ZEUNER, UNIV. CALIFORNIA AND *OHIO STATE UNIV., U.S.A 100
14:20 (2) NANOMETER-SCALE CURRENT-VOLTAGE SPECTRA MEASUREMENT OF
RESONANT TUNNELING DIODES USING SCANNING FORCE MICROSCOPY M. TANIMOTO,
K. KANISAWA AND M. SHINOHARA, NTT, JAPAN 103
14:40 (3) DEEP LEVELS AND CONDUCTION MECHANISM IN LOW-TEMPERATURE GAAS
GROWN BY MOLECULAR BEAM EPITAXY S. SHIOBARA, T. HASHIZUME AND H.
HASEGAWA, HOKKAIDO UNIV., JAPAN 106
15:00 (4) THE ELECTRICAL PROPERTIES OF HIGH QUALITY STACKED
CDTE/PHOTO-ENHANCED-NATIVE-OXIDE FOR HGCDTE PASSIVATION Y.K. SU, C.T.
LIN, H.T. HUANG, S.J. CHANG, T.P. SUN*, G.S. CHEN* AND J.J. LUO*, NAT I
CHENG KUNG UNIV. AND *CHUNG SHAN INST. SCI. & TECH., TAIWAN, CHINA 109
15:20 (5) EFFICIENT MIS ELECTRIC FIELD EFFECT ON DIAMOND THIN FILM
TRANSISTORS Y. OTSUKA, S. SUZUKI, T. MAKI, K. SAKUTA AND T. KOBAYASHI,
OSAKA UNIV., JAPAN 112 15:40 (6) FABRICATION AND CHARACTERIZATION OF A
PHASE CONTROLLED SNS QUANTUM ELECTRON IN TERFEROMETER.
V.T. PETRASHOV, V.N. ANTONOV, P. DELSING* AND T. CLAESON*, RUSSIAN
ACADEMY SCIENCES AND *CHALMERS UNIV. TECH. & UNIV. GOTEBORG, SWEDEN,
RUSSIA 113
D-2: OPTICAL PROPERTIES (16:20-18:00)
16:20 (1) NEARINFRARED INTERSUBBAND TRANSITIONS ININGAAS/AJAS QUANTUM
WELLS ON GAAS SUBSTRATE T. ASANO, S. NODA, T. ABE AND A. SASAKI, KYOTO
UNIV., JAPAN 118
16:40 (2) CARRIER DYNAMICS IN PIEZOELECTRIC QUANTUM WELLS GROWN ON GAAS
(111)A, (211)A AND (311) A STUDIED BY TIME RESOLVED PHOTOLUMINESCENCE
SPECTROSCOPY P.O. VACCARO, M. HOSODA, K. FUJITA AND T. WATANABE, ATR,
JAPAN 121
17:00 (3) SUBPICOSECOND CARRIER LIFETIME INLOW-TEMPERATURE-GROWN GAAS
LAYER ON (31 L)-ORIENTED SUBSTRATE
T.M. CHENG, C.Y. CHANG, G.R. LIN, F. GANIKHANOV, C.L. PAN AND J.H.
HUANG*, NAT I CHIAO TUNG UNIV. AND * NAT I TSING HUA UNIV., TAIWAN,
CHINA 124
XIX
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17:20 (4) EXTREMELY SHARP PHOTOLUMINESCENCE LINES FROM NITROGEN
ATOMIC-LAYER-DOPED ALGAAS/ GAAS SINGLE QUANTUM WELLS T. MAKIMOTO AND N.
KOBAYASHI, NTT, JAPAN 127
17:40 (5) INFLUENCE OF TYPE-I TO TYPE-II TRANSITION BY AN APPLIED
ELECTRIC FIELD ON PHOTOLUMINESCENCE AND CARRIER TRANSPORT IN GAAS/ALAS
TYPE-I SHORT-PERIOD SUPERLATTICES N. OHTANI, H. MIMURA, M. HOSODA, K.
TOMINAGA, T. WATANABE AND K. FUJIWARA*, ATR AND *KYUSHU INST. TECHNOL.,
JAPAN 130
AUGUST 22, TUESDAY
ROOM A
SYMPOSIUM 1-3: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III
SILICON NITRIDE AND ITS APPLICATION (9:20-10:30)
9:20 (1) DEFECTS IN AMORPHOUS SILICON-NITROGEN ALLOY FILMS (INVITED) T.
SHIMIZU, KANAZAWA UNIV., JAPAN 133
9:50 (2) INTERFACE STATES IN TOP GATE METAL-SILICON NITRIDE-SILICON
STRUCTURES J. KANICKI, S. BACKERT* AND N. PICARD*, UNIV. MICHIGAN, AND
*ECOLE POLYTECHNIQUE,
U.S.A 137
10:10 (3) OXYNITRIDE PAD LOCOS (ON-LOCOS) ISOLATION TECHNOLOGY FOR
GIGABIT DRAMS Y. SAMBONSUGI, T. YAMAZAKI, S. KAWASHIMA AND T. SUGII,
FUJITSU LABS., JAPAN 139
SYMPOSIUM 1-4: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III
FORMATION AND SIMULATION OF DIELECTRIC FILMS (10:50-12:20)
10:50 (1) SIMULATIONS OF CRACK PROPAGATION AND FRACTURE IN SILICA AND
SILICON NITRIDE FILMS ON PARALLEL COMPUTERS (INVITED) P. VASHISHTA, A.
NAKANO AND R.K. KALIA, LOUISIANA STATE UNIV., U.S.A 142
11:20 (2) APPLICATION OF CVD SI02 SINGLE LAYER FILMS TO INTER-POLY
DIELECTRICS OF FLASH MEMORIES T. KOBAYASHI, M. USHIYAMA, N. MIYAMOTO*,
J. YUGAMI, H. KUME AND K. KIMURA, HITACHI AND *HITACHI DEVICE ENG.,
JAPAN 145
11:40 (3) INVESTIGATION OF INTERLAYER DIELECTRIC MATERIAL INFLUENCE ON
DRAM RETENTION TIME M. OHISHI, K. MATSUI AND K. KOYAMA, NEC, JAPAN 148
12:00 (4) LOW-TEMPERATURE CVD OF SI02 BY ALKOXY-SILANE-ISO-CYANATE Y.
UCHIDA, S. TAKEI AND M. MATSUMURA*, NISHI-TOKYO UNIV. AND *TOKYO INST.
TECHNOL., JAPAN 151
SYMPOSIUM 1-5: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III LOW &
INTERLAYER DIELECTRIC FILMS (13:50-15:30)
13:50 (1) LOW PERMITTIVITY ORGANIC DIELECTRICS FOR MULTILEVEL
INTERCONNECTION IN HIGH SPEED ULSIS (INVITED)
Y. HOMMA, T. FURUSAWA, K. KUSUKAWA, S. MORIYAMA, H. MORISHIMA* AND H.
SATO*, HITACHI AND *HITACHI CHEMICAL, JAPAN 154
14:20 (2) FLUORINE DOPED SI02 FOR LOW DIELECTRIC CONSTANT FILMS IN
SUB-HALF MICRON ULSI MULTILEVEL INTERCONNECTION (INVITED) N. HAYASAKA,
H. MIYAJIMA, Y. NAKASAKI AND R. KATSUMATA, TOSHIBA, JAPAN 157
14:50 (3) FORMATION OF SIOF FILMS BY PECVD USING (C2H50)3SIF H. KITO, M.
MUROYAMA, M. SASAKI, M. IWASAWA AND H. KIMURA, SONY, JAPAN 160 15:10 (4)
PREPARATION OF LOW DIELECTRIC CONSTANT F-DOPED SI02 FILMS BY PECVD S.W.
LIM, Y. SHIMOGAKI, Y. NAKANO, K. TADA AND H. KOMIYAMA, UNIV. TOKYO,
JAPAN... 163
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SYMPOSIUM 1-6: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS HI
GAP-FILL/PLANARIZATION & ORGANIC FILMS (15:50-17:50)
15:50 (1) DEVELOPMENTS IN CONSUMABLES USED IN THE CHEMICAL MECHANICAL
POLISHING OF DIELECTRICS (INVITED)
S. SIVARAM, R. TOLLES* AND A. SETHURAMAN**, INTEL, *APPLIED MATERIALS
AND ** RODEL, U.S.A 166
16:20 (2) H20-TOP-PECVD : A NEW PLASMA ENHANCED CVD TECHNOLOGY USING
ALTERNATE TEOS OZONE LOW PRESSURE CVD AND H20 ASSISTED 03 PLASMA
TREATMENT. K. KISHIMOTO, K. IMAOKA*, K. KOYANAGI AND T. HOMMA, NEC AND
*APPLIED MATERIALS JAPAN, JAPAN 168
16:40 (3) HIGH RATE BIAS SPUTTERING FILLING OF SI02 FILM EMPLOYING BOTH
CONTINUOUS WAVE AND TIME-MODULATED INDUCTIVELY COUPLED PLASMAS Y.
KOBAYASHI, Y. CHINZEI, H. ASANOME*, R. KUROSAKI**, J. KIKUCHI**, S.
SHINGUBARA*** AND Y. HORIIKE, TOYO UNIV., *TOSHIBA MACHINE, **FUJITSU
AND ***HIROSHIMA UNIV.,
JAPAN 171
17:00 (4) LOW DIELECTRIC CONSTANT FILMS FOR ULSI INTERCONNECT
APPLICATIONS (INVITED) C. CHIANG, C. PAN, A.S. MACK, Y. LING, Q. VU AND
D.B. FRASER, INTEL, U.S.A 174 17:30 (5) NITROGEN DOPED FLUORINATED
AMORPHOUS CARBON THIN FILMS GROWN BY PLASMA ENHANCED CHEMICAL VAPOR
DEPOSITION
K. ENDO AND T. TATSUMI, NEC, JAPAN 177
ROOM B
SYMPOSIUM II: SINGLE ELECTRON DEVICES (9:20-12:35)
9:20 (1) ARTIFICIAL QUANTUM SOLIDS THAT COMPUTE: QUANTUM-MECHANICAL
LOGIC GATES AND NEUROMORPHIC NETWORKS (INVITED) S. BANDYOPADHYAY AND
V.P. ROYCHOWDHURY*, UNIV. NOTRE DAME AND *PURDUE UNIV., U.S.A 180
9:50 (2) SINGLE-ELECTRON TUNNELING IN COUPLED NANOWIRE SYSTEMS A.A.
TAGER, M. LU, J.M. XU AND M. MOSKOVITS, UNIV. TORONTO, CANADA 183 10:10
(3) SINGLE ELECTRON DEVICE WITH ASYMMETRIC TUNNEL BARRIERS Y. MATSUMOTO,
T. HANAJIRI, T. TOYABE AND T. SUGANO*, TOYO UNIV. AND *RIKEN,
JAPAN 186
10:50 (4) NOVEL FABRICATION TECHNIQUE FOR A SI SINGLE-ELECTRON
TRANSISTOR AND ITS HIGH TEMPERATURE OPERATION (INVITED) Y. TAKAHASHI, M.
NAGASE, H. NAMATSU, K. KURIHARA, K. IWADATE, Y. NAKAJIMA, S. HORIGUCHI,
K. MURASE AND M. TABE, NTT, JAPAN 189
11:20 (5) ROOM TEMPERATURE OPERATION OF SINGLE ELECTRON TRANSISTOR MADE
BY STM NANO-OXIDATION PROCESS
K. MATSUMOTO, M. ISHII, K. SEGAWA, Y. OKA, B.J. VARTANIAN* AND J.S.
HARRIS*, ETL AND STANFORD UNIV., U.S.A., JAPAN 192
11:40 (6) NOVEL SCHOTTKY IN-PLANE GATE SINGLE-ELECTRON TRANSISTORS USING
GAAS/ALGAAS SYSTEM OPERATING UP TO 10K K. JINUSHI, H. OKADA, T.
HASHIZUME AND H. HASEGAWA, HOKKAIDO UNIV., JAPAN 195
12:00 (7) RESONANT TUNNELING PROPERTIES OF SINGLE ELECTRON TRANSISTORS
WITH A NOVEL DOUBLE-GATE GEOMETRY T. FUJISAWA AND S. TARUCHA, NTT, JAPAN
198
12:20-12:35 POSTER PREVIEW
PB-1 SYMPOSIUM II: SINGLE ELECTRON DEVICES
(1) CHARACTERIZATION OF ONE-DIMENSIONAL CONDUCTION IN AN ULTRA-THIN
POLY-SI WIRE
T. ISHII, K. YANO, T. SANO*, T. MINE, F. MURAI AND K. SEKI, HITACHI AND
*HITACHI DEVICE
ENG., JAPAN 201
(2) COMPLEMENTARY DIGITAL LOGIC USING RESISTIVELY COUPLED SINGLE
ELECTRON TRANSISTOR
N. YOSHIKAWA, Y. JINGUU, H. ISHIBASHI AND M. SUGAHARA, YOKOHAMA NAT I
UNIV., JAPAN... 204
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(3) COTUNNELING-TOLERANT SINGLE-ELECTRON LOGIC
S. AMAKAWA, H. FUKUI, M. FUJISHIMA AND K. HOH, UNIV. TOKYO, JAPAN 207
(4) BISTABLE LOCKING OF SINGLE-ELECTRON TUNNELING JUNCTIONS FOR DIGITAL
CIRCUITRY R.A. KIEHL AND T. OHSHIMA, FUJITSU LABS., JAPAN 210
B-3: ADVANCED CMOS (13:50-15:40)
13:50 (1) LOW-VOLTAGE AND POWER CMOS TECHNOLOGY (INVITED) M. KAKUMU, M.
KINUGAWA, K. ISHIMARU AND H. OYAMATSU, TOSHIBA, JAPAN 213 14:20 (2) A
NEW TRIPLE-WELL PROCESS TO ACCOMPLISH A LOWER VTH AND A LOW COST FOR LOW
POWER-
SUPPLY VOLTAGE VLSI J. MITANI, K. ITABASHI, M. NAGASE, M. KAWANO AND T.
EMA, FUJITSU, JAPAN 216
14:40 (3) IMPACT OF NITROGEN IMPLANTATION ON HIGHLY RELIABLE SUB-QUARTER
MICRON LDD MOSFETS
S. SHIMIZU, T. KUROI, S. KUSUNOKI, Y. OKUMURA, M. INUISHI AND T. HIRAO,
MITSUBISHI
ELEC, JAPAN
219
15:00 (4) A HIGH PERFORMANCE 0.15 JUM SINGLE GATE CMOS TECHNOLOGY T.
YOSHITOMI, M. SAITO, T. OHGURO, M. ONO, H.S. MOMOSE AND H. IWAI,
TOSHIBA, JAPAN
222
15:20 (5) TUNGSTEN GATE TECHNOLOGY FOR QUARTER-MICRON APPLICATION H.
NODA, H. SAKIYAMA*, Y. GOTO, T. KURE AND S. KIMURA, HITACHI AND *HITACHI
VLSI ENG., JAPAN
225
B-4: MODELING AND PHYSICS OF SI DEVICES (16:00-18:10)
16:00 (1) MONTE CARLO SIMULATIONS OF IMPACT IONIZATION FEEDBACK IN
SUB-MICRON MOSFET TECHNOLOGIES (INVITED) J.D. BUDE, AT&T BELL LABS.,
U.S.A 228
16:30 (2) NOVEL IMPACT IONIZATION MODEL FOR DEVICE SIMULATION USING
GENERALIZED MOMENT CONSERVA TION EQUATIONS K. SONODA, M. YAMAJI, K.
TANIGUCHI AND C. HAMAGUCHI, OSAKA UNIV., JAPAN 231
16:50 (3) CHARACTERISTICS OF CONDUCTIVITY MODULATED POLYSILICON THIN
FILM TRANSISTORS A. KUMAR K.P. AND J.K.O. SIN, HONG KONG UNIV. SCI.
TECH., HONG KONG 234 17:10 (4) ANOMALOUS CAPTURE AND EMISSION BY
INDIVIDUAL SI-SI02 INTERFACE DEFECTS IN ADVANCED SELFALIGNED BIPOLAR
TRANSISTORS
J.-Q. LU, S. SCHOTTL, F. KOCH, R. MAHNKOPF* AND H. KLOSE*. TECH. UNIV.
MUNICH AND
*SIEMENS AG, F.R.G 237
17:30 (5) SIMULATIONOFENHANCED DRAIN CURRENT CHARACTERISTICS IN A MOSFET
WITH A QUANTUM WIRE STRUCTURE INCORPORATING A PERIODICALLY BENT SI-SI02
INTERFACE J. TANAKA AND A. SAWADA, HITACHI, JAPAN 240
17:50 (6) ANALYSIS OF CHAOS IN CAPACITANCE-NPN-TRANSISTOR PAIR AND ITS
APPLICATION TO NEURON ELEMENT T. IRITA, M. FUJISHIMA AND K. HOH, UNIV.
TOKYO, JAPAN 243
18:30-20:45 RUMP SESSION B: HBT: HBTS ARE TAKING OFF. WHERE TO LAND?
ROOM C
C-L: SURFACE CLEANING (9:20-10:40)
9:20 (1) CHARACTERIZATION OF A CLEANING TECHNOLOGY FOR SILICON SURFACE
BY HOT PURE WATER CONTAIN ING A LITTLE DISSOLVED OXYGEN Y. HAYAMI, M.T.
SUZUKI, Y. OKUI, H. OGAWA AND S. FUJIMURA, FUJITSU, JAPAN 246 9:40 (2)
CLEANING OF SILICON SURFACES BY NF3 ADDED HYDROGEN AND WATER VAPOR
PLASMA
DOWNSTREAM TREATMENT J. KIKUCHI, M. NAGASAKA, S. FUJIMURA, H. YANO AND
Y. HORIIKE*. FUJITSU AND *TOYO UNIV., JAPAN 249
10:00 (3) STUDY OF CU CONTAMINATION REMOVAL USING ELECTROLYTIC IONIZED
WATER H. AOKI, S. YAMASAKI, Y. SHIRAMIZU, N. AOTO, T. IMAOKA*, T.
FUTATSUKI*, Y. YAMASITA* AND K. YAMANAKA*, NEC AND *ORGANO, JAPAN 252
10:20 (4) PRECISE CONTROL OF SI02 ETCHING CHARACTERISTICS USING
MONO-LAYER ADSORPTION OF HF/H20 VAPOR N. NAKANISHI AND N. KOBAYASHI,
HITACHI, JAPAN 255
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11:00-12:40 POSTER PREVIEW
PC-1 SYMPOSIUM I: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III
GATE INSULATORS I
(1) FORMATION PROCESS OF HIGHLY RELIABLE ULTRA-THIN GATE OXIDE K. OHMI,
T. IWAMOTO, T. YABUNE, T. MIYAKE AND T. OHMI, TOHOKU UNIV., JAPAN 258
(2) HIGHLY RELIABLE ULTRA THIN GATE DIELECTRICS FOR DUAL-GATE CMOS
DEVICES
L.K. HAN, D. WRISTERS, T.S. CHEN, C. LIN, K. CHEN, J. FULFORD* AND D.L.
KWONG, UNIV. TEXAS AND *ADVANCED MICRO DEVICES, U.S.A 261
(3) RELIABILITY OF STRUCTURALLY MODIFIED ULTRA-THIN GATE OXIDES
H. SATAKE, N. YASUDA AND A. TORIUMI, TOSHIBA, JAPAN 264
(4) ELECTRON TUNNELING THROUGH CHEMICAL OXIDE OF SILICON
M. MATSUDA, K. WATANABE, M. YASUTAKE* AND T. HATTORI, MUSASHI INST.
TECHNOL. AND SEIKO INSTRUMENTS, JAPAN 267
(5) THE OXIDE RELIABILITY IMPROVEMENT WITH ULTRA-DRY UNLOADING IN WET
OXIDATION USINGLOAD
LOCK OXIDATION SYSTEM J. YUGAMI AND M. OHKURA, HITACHI, JAPAN 270
(6) EFFECT OF ORGANIC COMPOUNDS ON GATE OXIDE RELIABILITY
Y. SHIRAMIZU AND H. KITAJIMA, NEC, JAPAN 273
(7) CORRELATING CHARGE-TO-BREAKDOWN WITH CONSTANT-CURRENT INJECTION TO
GATE OXIDE LIFETIME
UNDER CONSTANT-VOLTAGE STRESS K. ERIGUCHI AND Y. URAOKA, MATSUSHITA
ELEC. IND., JAPAN 276
(8) TRAP GENERATION INDUCED BY LOCAL DISTORTION IN AMORPHOUS SILICON
DIOXIDE FILM
C. KANETA, FUJITSU LABS., JAPAN 279
(9) DYNAMICS OF HOT-CARRIER INDUCED INTERFACE STATE GENERATION IN
POLYSILICON THIN-FILM TRAN
SISTORS
A. PECORA, I. POLICICCHIO, G. FORTUNATO, F. PLAIS* AND D. PRIBAT*,
IESS-CNR AND *THOMSON-CSF, FRANCE, ITALY 282
(10) MAGNETIC FIELD INDUCED PROLONGED CHANGES OF ELECTRIC PARAMETERS OF
MOS STRUCTURES V.M. MASLOVSKY, JURY O. LICHMANOV NICKOLAI S. SAMSONOV
AND E.V. SIMANOVICH, ZELENOGRAD RES.INST.PHYS.PROB., RUSSIA 285
PC-2 SYMPOSIUM I: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III
FERROELECTRIC THIN FILMS
(1) ELECTRICAL CHARACTERIZATIONS OF PT/(BA,SR)TI03/PT PLANAR CAPACITORS
FOR ULSI DRAM
APPLICATIONS.
S.O. PARK, C.S. HWANG, H.J. CHO, C.S. KANG, H.-K. KANG, S.I. LEE AND M.
Y. LEE, SAM
SUNG, KOREA
287
(2) QUASI-EPITAXIAL GROWTH OF PZT THIN FILM TO FABRICATE CAPACITOR
SUITABLE FOR 256MB
DRAM AND BEYOND S. YAMAUCHI AND M. YOSHIMARU, OKI ELEC. IND., JAPAN 291
(3) SUBSTRATE ORIENTATION DEPENDENCE OF THE PROPERTIES OF
METAL-FERROELECTRIC BAMGF4-SILICON
CAPACITORS BY POST-DEPOSITION ANNEALING K.-H. KIM, J.-D. KIM AND H.
ISHIWARA*, CHEONG-JU UNIV. AND *TOKYO INST. TECHNOL., JAPAN, KOREA 294
(4) BI4TI3012 FILMS GROWN ON SI02/SI AT LOW TEMPERATURE BY LASER
ABLATION METHOD
W. WU, K. FUMOTO, Y. OISHI, M. OKUYAMA AND Y. HAMAKAWA, OSAKA UNIV.,
JAPAN .. .297 (5) ALL-PEROVSKITE FERROELECTRIC/SEMICONDUCTOR FIELD
EFFECT TRANSISTOR
Y. WATANABE, M. TANAMURA AND Y. MATSUMOTO, MITSUBISHI CHEMICAL, JAPAN
300
PC-3 SYMPOSIUM IV: ADVANCED METALLIZATION FOR SEMICONDUCTOR DEVICES
(1) SUPPRESSION OF RESISTANCE INCREASE IN AL/W INTERCONNECTS BY N2
PLASMA TREATMENT
M. SEKIGUCHI, T. FUJII* AND M. YAMANAKA, MATSUSHITA ELEC. IND. AND
*MATSUSHITAELEC, JAPAN 303
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(2) AN EFFICIENT IMPROVEMENT FOR BARRIER EFFECT OF W-FILLED CONTACT
W.-K. YEH, T.-C. CHANG, M.-H. TSAI, S.-H. CHEN, K.-Y. CHAN, M.-C. CHEN
AND M.-S. LIN*, NAT I CHIAO TUNG UNIV., AND *TAIWAN SEMICONDUCTOR
MANUFACTURING, TAIWAN, CHINA 306
(3) COMPARISON OF CVD AND PVD TAN AS DIFFUSION BARRIERS FOR AL AND CU
METALLIZATION
S.C. SUN, M.H. TSAI, C.E. TSAI AND H.T. CHIU, NAT I CHIAO TUNG UNIV.,
TAIWAN, CHINA... 309 (4) OPTIMIZATION OF CONTACT PROCESS WITH
MONTE-CARLO STUDY FOR ADVANCED CMOS DEVICES
H. SUMI, T. YANAGIDA, H. YAMADA, Y. MIYAMORI, Y. SUGANO, S. KISHIDA* AND
H. TOKUTAKA*, SONY AND *TOTTORI UNIV., JAPAN 312
(5) DIRECT FORMATION OF SELECTIVE CVD-A1 CONTACT PLUG ON TITANIUM
SILICIDE OBTAINED BY
SILICIDATION OF TITANIUM INCLUDING NITROGEN
T. KOMIYA, Y. TAKAI AND H. SHINRIKI, KAWASAKI STEEL, JAPAN 315
(6) EFFECTS OF Y OR GD ADDITION ON THE STRUCTURE OF AL THIN FILMS
S. TAKAYAMA AND N. TSUTSUI*, IBM JAPAN AND *INTERN. TEST AND ENG.
SERVICES, JAPAN.. .318 (7) NEW CHARACTERIZATION OF TISI2 LOCAL WIRING
TECHNOLOGY AND ITS IMPACT ON LOW POWER /
HIGH SPEED QUARTER MICRON CMOS A. OHTOMO, J. IDA, N. OZAWA, M. KAGEYAMA
AND H. ONODA, OKI ELEC. IND., JAPAN 321 (8) HIGH-SPEED AND LOW-POWER
INTERCONNECT TECHNOLOGY FOR SUB-QUARTER-MICRON ASICS
M. MIYAMOTO, T. TAKEDA AND T. FURUSAWA, HITACHI, JAPAN 324
(9) ELECTROCHEMICAL ANALYSES FOR CORROSION MECHANISM OF AL-CU ALLOY
THIN-FILMS
N. AOI, A. KAWAGUCHI, S. MAYUMI AND K. YANO*, MATSUSHITA ELEC. IND. AND
MATSUSHITA, JAPAN 327
PC-4 MODELING AND PHYSICS OF SI DEVICES
(1) INVESTIGATION OF NON-EQUILIBRIUM CARRIER TRANSPORT IN SUB-O.L/IM
MOSFET S BASED ON
MONTE CARLO ANALYSIS T. SHIMATANI AND M. KOYANAGI, TOHOKU UNIV., JAPAN
330
(2) TAIL ELECTRON HYDRODYNAMIC MODEL FOR CONSISTENT MODELING OF IMPACT
IONIZATION AND GATE
INJECTION J.-G. AHN, Y.-J. PARK* AND H.-S. MIN*, LG SEMICON AND *SEOUL
NAT I UNIV., KOREA .. .333 (3) STUDY OF QUASI-TWO DIMENSIONAL HOLE GAS
SI/SI*GEJ.X/SI QUANTUM WELLS S. CHEON, S.C. LEE*, S. HONG AND K.-H.
YOO**, KAIST, *ELEC. AND TELECOM. RES. INST,
AND **KOREA RES. INST. STANDARDS AND SCIENCE, KOREA 336
(4) FABRICATION AND TRANSPORT PROPERTIES OF GATE-AIL-AROUND SILICON
QUANTUM WIRE TRANSISTOR K. MORIMOTO, Y. HIRAI, K. YUKI AND K. MORITA,
MATSUSHITA ELEC. IND., JAPAN 339 (5) EXTREMELY LARGE AMPLITUDE OF RANDOM
TELEGRAPH SIGNALS IN A VERY NARROW SPLIT-GATE MOSFET AT LOW TEMPERATURES
H. ISHIKURO, T. SARAYA, T. HIRAMOTO AND T. IKOMA*, UNIV. TOKYO AND
*TEXAS IN STRUMENTS, JAPAN 342
(6) GUIDED MODES OF ELECTRON WAVE IN A SI-QUANTUM WIRE Y. OKAWA, H.
TSUCHIYA AND T. MIYOSHI, KOBE UNIV., JAPAN 345
(7) THE POSSIBILITY OF QUANTIZED CONDUCTANCE AT TEMPERATURES ABOVE 4.2K
IN BULK SI
MOSFETS K. TAKEUCHI, D. HISAMOTO, H. YAMASHITA* AND M. AOKI, HITACHI AND
*HITACHI VLSI ENG., JAPAN 348
C-2: DOPING (13:50-16:00)
50 (1) PLASMA IMMERSION ION IMPLANTATION FOR ELECTRONIC MATERIALS
APPLICATIONS (INVITED) N.W. CHEUNG, W. EN, J. GAO, S.S. IYER, E.C.
JONES, B.P. LINDER, J.B. LIU, X. LU, J. MIN AND B. SHIEH, UNIV.
CALIFORNIA, U.S.A 351
20 (2) ULTRA SHALLOW P-!-N JUNCTION FORMATION USING THE SOLID PHASE
DIFFUSION(SPD) THROUGH A-SI/THIN BARRIER OXIDE LAYER S.J. KWON, B.G.
PARK* AND J.D. LEE*, KYUNGWON UNIV., AND *SEOUL NAT I UNIV., KOREA...
354
40 (3) ON THE USE OF INDIUM AND GALLIUM AS P-TYPE DOPANTS IN SI 0.1 /AM
MOSFETS S. BIESEMANS, S. KUBICEK, J.V. LAER, F. LOOSEN, L. GEENEN, K.
MAEX AND K.D. MEYER, IMEC, BELGIUM 357
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15:00 (4) STUDY OF PENETRATED BORON CONCENTRATION THROUGH ULTRA-THIN
OXYNITRIDED GATE DIELECTRICS M. KAWATA, M. KITAKATA, E. HASEGAWA, A.
ISHITANI, K.S. KRISCH*, M.L. GREEN*, D. BRASEN*, L. MANCHANDA* AND L.C.
FELDMAN*, NEC, AND *AT&T BELL LABS. U.S.A., JAPAN 360
15:20 (5) CHARACTERISTICS OF BORON DIFFUSION FROM BSG FILM AND THE
FORMATION OF ULTRA-SHALLOW, LOW-RESISTANCE JUNCTIONS H. KUJIRAI, E.
MURAKAMI AND S. KIMURA, HITACHI, JAPAN 363
15:40 (6) EFFECT OF SUBSTRATE BORON CONCENTRATION ON THE INTEGRITY OF
450C-ANNEALED ION-IMPLANTED JUNCTIONS
A. NAKADA, M.M. OKA, Y. TAMAI, T. SHIBATA, H. AHARONI AND T. OHMI,
TOHOKU UNIV., JAPAN 366
C-3: OTHERS (16:20-17:50)
16:20 (1) ASSIGNING CORE-LEVEL SI 2P PHOTOEMISSION SHIFTS AT THE SI/SI02
INTERFACE (INVITED) S. LEE, M.B. HOLL, W.H. HUNG* AND F.R. MCFEELY*,
BROWN UNIV. AND *IBM T.J. WATSON RES. CIR., U.S.A 369
16:50 (2) OPTICAL CAVITY BASED ON POROUS SILICON SUPERLATTICE TECHNOLOGY
M. ARAKI, H. KOYAMA AND N. KOSHIDA, TOKYO UNIV. AGRI. TECH., JAPAN 371
17:10 (3) FABRICATION OF A SI NANOMETER COLUMN PN JUNCTION AND IMPLANTED
DAMAGE EVALUATION BY TEM
H. SUKESAKO, K. INOUE, T. KAWASAKI, H. SAKAUE, S. SHINGUBARA, T.
TAKAHAGI AND Y. HORIIKE*, HIROSHIMA UNIV., AND *TOYO UNIV., JAPAN 374
17:30 (4) EXTREMELY LOW ON-RESISTANCE METAL TO METAL ANTIFUSES WITH
AL/P-SIN/AL STRUCTURE FOR NEXT GENERATION FPGAS Y. KIMURA, Y. TAMURA, C.
TSUTSUI AND H. SHINRIKI, KAWASAKI STEEL, JAPAN 377
18:30-20:45 RUMP SESSION D: PLANARIZATION TECHNOLOGY FOR DIELECTRIC AND
METAL FILMS IN ULSI APPLICATIONS
ROOM D
D-3: HBTS & TUNNELING DEVICES (9:20-11:10)
9:20 (1) HIGH VOLUME PRODUCTION OF HETEROJUNCTION BIPOLAR TRANSISTORS
(INVITED) D.C. STREIT, TRW, U.S.A 380
9:50 (2) ORIENTATION EFFECT ON ALGAAS/GAAS HETEROJUNCTION BIPOLAR
TRANSISTORS H. ISHIDA AND D. UEDA, MATSUSHITA, JAPAN 383
10:10 (3) 1.5V LOW-VOLTAGE MICROWAVE POWER PERFORMANCE OF INALAS/INGAAS
DOUBLE HETEROJUNC TION BIPOLAR TRANSISTORS T. IWAI, H. SHIGEMATSU, H.
YAMADA, T. TOMIOKA, K. JOSHIN AND T. FUJII, FUJITSU LABS., JAPAN 386
10:30 (4) NONEQUILIBRIUM NOISE IN THE CURRENT FLOWING THROUGH
MODULATION-DOPED DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES S. SASAKI,
D.G. AUSTING, T. HONDA AND S. TARUCHA, NTT, JAPAN 389
10:50 (5) LATERAL TUNNELING DEVICES ON GAAS (111)A AND (311)A PATTERNED
SUBSTRATES GROWN BY
MBE USING ONLY SILICON DOPANT H. OHNISHI, M. HIRAI, K. FUJITA AND T.
WATANABE, ATR, JAPAN 392
11:30-12:30 POSTER PREVIEW
PD-1 NOVEL ELECTRON DEVICES
(1) THE LOW-TEMPERATURE CHARACTERISTICS OF GASB/ALSB/INAS/GASB/ALSB/INAS
BROKEN-GAP
INTERBAND TUNNELING STRUCTURE M.H. LIU, Y.H. WANG, M.P. HOUNG, J.F. CHEN
AND A.Y. CHO, NAT I CHENG KUNG UNIV., TAIWAN, CHINA 395
(2) NUMERICAL STUDY OF COLLECTOR-BASE JUNCTION DESIGN FOR
ULTRA-HIGH-SPEED INP/INGAAS
HETEROJUNCTION BIPOLAR TRANSISTORS G. KHRENOV AND E. KULKOVA*, UNIV.
AIZU AND *RES. CTR. MICROEL , RUSSIA, JAPAN... 398
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(3) OPTIMIZATION OF CURRENT-VOLTAGE CHARACTERISTICS OF
ORGANIC-ON-INORGANIC HETEROSTRUCTURE
DIODES.
P. URBACH, C. ROMPF, D. AMMERMANN AND W. KOWALSKY, TECH. UNIV.
BRAUNSCHWEIG, F.R.G .. 4OI
(4) SOLID STATE GMR MEMORY
Z. WANG, TOHOKU UNIV., JAPAN 404
(5) CROSSOVER OF NOISE POWER FROM THERMAL TO SHOT NOISE IN
SUPERCONDUCTING MESOSCOPIC DEVICES
Y. MISAKI, A. SAITO* AND K. HAMASAKI*, TAKUMA NAT I COLLEGE TECHNOL. AND
*NAGAOKA UNIV. TECHNOL., JAPAN 407
(6) ELECTRIC FIELD EFFECT IN LATI03/SRTI03 HETEROSTRUCTURE
C. YOSHIDA, H. TAMURA, A. YOSHIDA*, Y. KATAOKA, N. FUJIMAKI* AND N.
YOKOYAMA*, FUJITSU LABS, AND *FUJITSU, JAPAN 410
PD-2 III-V FET
(1) NEW FABRICATION TECHNOLOGY INTEGRATING FETS AND DIODES
J.-W. JUNG, S.-C. HONG AND Y.-S. KWON, KAIST, KOREA 413
(2) LOW NOISE CHARACTERISTICS OF 0.2 [IM
ALO.24GAO.76AS/INO.15GAO.S5AS/GAAS PSEUDOMORPHIC
HEMTS WITH WIDE HEAD T-SHAPED MULTIFINGER GATE H.-S. YOON, J.-H. LEE,
C.-S. PARK, K.-E. PYUN AND H.-M. PARK, ELEC. TELECOMM. RES. INST., KOREA
416
(3) EXCELLENT THERMALLY-STABLE EPITAXIAL CHANNEL FOR IMPLANTED
PLANAR-TYPE HETERO-JUNCTION
FIELD-EFFECT TRANSISTORS
S. MATSUSHITA, E. FUJII, D. INOUE, S. TERADA, S. BANBA, K. MATSUMURA, M.
SAWADA AND Y. HARADA, SANYO ELEC, JAPAN 419
(4) A SHORT CHANNEL HEMT MODEL FOR CIRCUIT SIMULATION BASED ON PHYSICAL
STRUCTURE
K. NAKASHI, K. TANIGUCHI, Y. OKA AND F. NAKAMURA, KYUSHU UNIV., JAPAN
422
PD-L1 LATE NEWS
(LI) A 4:1 MUX CIRCUIT USING 1/4-MICRON CMOS/SIMOX FOR HIGH-SPEED AND
LOW-POWER
APPLICATIONS S. YASUDA, Y. OHTOMO, M. INO, Y. KADO, H. INOKAWA AND T.
TSUCHIYA, NTT, JAPAN.. 1031
(L2) EFFECTS OF IMPLANTED DOPANTS IN THE LDD REGION ON THE SHORT CHANNEL
EFFECT OF A DEEP SUB-MICRON MOS DEVICE B.J. KOO, D.J. JUNG, J.W. PARK,
N.S. KANG, T.E. SHIM AND M.Y. LEE, SAMSUNG, KOREA.. 1033
(L3) A HIGH PERFORMANCE P-CHANNEL TRANSISTOR: /3-MOS FET K. YOH, R.
KOIZUMI, N. HASHIMOTO* AND S. IKEDA*, HOKKAIDO UNIV. AND *HITACHI, JAPAN
1035
(L4) POLYMIDE WAVEGUIDE AS OPTICAL INTERCONNECTION FOR MULTI-CHIP MODULE
APPLICATION T. MATSUMOTO, Y. KUDOH, T. YONEZAWA AND M. KOYANAGI, TOHOKU
UNIV., JAPAN 1037 (L5) LIGHT-EMITTING POROUS SILICON PREPARED BY PULSED
ANODIC ETCHING X. HOU, H. FAN, F. ZHANG, M. YU AND M. KOYANAGI, TOHOKU
UNIV., JAPAN 1037
(L6) NEW METHODS FOR ULTRA-SHALLOW BORON DOPING BY USING PLASMA,
PLASMA-LESS AND SPUTTER ING B. MIZUNO, H. NAKAOKA, M. TAKASE, A. HORI,
I. NAKAYAMA AND M. OGURA, MATSUSHITA ELEC. IND., JAPAN 1041
(L7) FABRICATION OF SI/AL203/SI SOI STRUCTURES GROWN BY THE UHV-CVD
METHOD T. KIMURA, A. SENGOKU AND M. ISHIDA, TOYOHASHI UNIV. TECHNOL.,
JAPAN 1043 (L8) DETERMINATION OF CHEMICAL SHIFTS IN SI2P CORE-LEVEL
SPECTRA FOR SILICON-HYDROGEN BONDS ON CHEMICALLY-CLEANED SU(100) AND
SI(LLL) SURFACES
C.H. BJORKMAN, J.L. ALAY, H. NISHIMURA, M. FUKUDA, T. YAMAZAKI AND M.
HIROSE, HIROSHIMA UNIV., JAPAN 1045
(L9) ULSI TECHNOLOGY EVALUATION AND PRECAUTIONS: A NOVEL VIEW OF SI02
LAYER PROPERTIES IN THE NANO- AND SUB-NANOSCALE.
O.V. ROMANOV, I.A. KOTOV AND H.-C. LEE*, ST.-PETERSBURG UNIV. AND
*KAIST, KOREA, RUSSIA 1047
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D-4: SEMICONDUCTOR LASERS (13:50-15:40)
13:50 (1) TAPERED THICKNESS WAVEGUIDE INTEGRATED BH MQW LASERS (INVITED)
H. SODA, H. KOBAYASHI, T. YAMAMOTO, M. EKAWA AND S. YAMAZAKI, FUJITSU
LABS, JAPAN 425
14:20 (2) BEAM EXPANDER-INTEGRATED LASERS GROWN BY SINGLE-STEP MOVPE H.
SATO, M. AOKI, M. TAKAHASHI, M. KOMORI, K. UOMI AND S. TSUJI, HITACHI,
JAPAN . ..428 14:40 (3) NOVEL STRUCTURE OF 1.3 /IM STRAINED-LAYER MQW
COMPLEX-COUPLED DFB LASERS M. KITO, S. NAKAMURA, N. OTSUKA, M. ISHINO
AND Y. MATSUI, MATSUSHITA ELEC. IND.,
JAPAN 431
15:00 (4) ANISOTROPIC OSCILLATION PROPERTIES IN FRACTIONAL-SUPERLATTICE
QUANTUM WIRE LASERS H. SAITO, N. KOBAYASHI AND H. ANDO, NTT, JAPAN 434
15:20 (5) SELF-SUSTAINED PULSATION IN 650NM-BAND ALGALNP VISIBLE LASER
DIODES WITH HIGHLY DOPED SATURABLE ABSORBING LAYER H. ADACHI, S.
KAMIYAMA, I. KIDOGUCHI AND T. UENOYAMA, MATSUSHITA ELEC. IND., JAPAN...
437
D-5: NOVEL OPTICAL DEVICES (16:00-18:00)
16:00 (1) FIRST LASING OPERATION OF ALUMINUM-FREE 0.98-//M-RANGE
INGAAS/INGAP/GAAS VERTICALCAVITY SURFACE-EMITTING LASERS K. SHINODA, K.
HIRAMOTO, M. SAGAWA AND K. UOMI, HITACHI, JAPAN 440
16:20 (2) LOW THRESHOLD CURRENT DENSITY SURFACE-EMITTING LASERS BURIED
BY AMORPHOUS GAAS H.-H. PARK, B.-S. YOO, E.-H. LEE, M.S. PARK* AND B.T.
AHN*, ELEC. TELECOMM. RES. INST, AND *KAIST, KOREA 443
16:40 (3) INGAAS/GAAS STRAINED QUANTUM WELL LASERS WITH ETCHED
MICRO-CORNER REFLECTORS J. KATO, F. KOYAMA, A. MATSUTANI, T. MUKAIHARA
AND K. IGA, TOKYO INST. TECHNOL.,
JAPAN 446
17:00 (4) 1100 HOURS STABLE OPERATION IN 0.87-/^M INGAP/GAAS LED S ON SI
SUBSTRATES GROWN BY
MOCVD T. EGAWA, J. DONG*, K. MATSUMOTO*, T. JIMBO AND M. UMENO,
NAGOYALNST. TECHNOL., AND *NIPPON SANSO, JAPAN 449
17:20 (5) HIGH SENSITIVITY PHOTODETECTOR WITH SELF-AMPLIFICATION
CAPABILITY H. YAMAMOTO, K. TANIGUCHI AND C. HAMAGUCHI, OSAKA UNIV.,
JAPAN 452
17:40 (6) GROWTH AND CHARACTERIZATION OF ORGANIC SEMICONDUCTOR DEVICES:
PHOTODETECTORS AND LIGHT
EMITTING DIODES (OLEDS) C. ROMPF, D. AMMERMANN, A. BOHLER AND W.
KOWALSKY, TECH. UNIV. BRAUNSCHWEIG, F.R.G 455
ROOM E
14:00-16:00 POSTER PRESENTATION PB-1 , PC-1 , PC-2 , PC-3 , PC-4 ,
PD-1 , PD-2 , PD-L1
AUGUST 23, WEDNESDAY
ROOM A
SYMPOSIUM 1-7: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III GATE
DIELECTRICS AND MOS RELIABILITY I (9:20-10:50)
9:20 (1) SINGLE, INDIVIDUAL TRAPS AT THE SI02/SI INTERFACE IN SUB-^M
MOSFETS (INVITED)
M. SCHULZ, H.H. MUELLER AND U. SCHIRL, UNIV. ERLANGEN, F.R.G 458
9:50 (2) TIME-DEPENDENT DIELECTRIC DEGRADATION (TDDD) INFLUENCED BY
ULTRATHIN OXIDATION PROCESS
M. KIMURA AND T. OHMI, TOHOKU UNIV., JAPAN
461
10:10 (3) IMPACT OF NEGATIVE-BIAS TEMPERATURE INSTABILITY ON THE
LIFETIME OF SINGLE-GATE CMOS
STRUCTURES WITH ULTRATHIN(4-6 NM)GATE OXIDES
S. OGAWA, M. SHIMAYA AND N. SHIONO*, NTT AND *RCJ, JAPAN 464
10:30 (4) EFFECTOF NITROGEN PROFILE ON TUNNEL OXYNITRIDE DEGRADATION
WITH CHARGE INJECTION POLARITY
T. ARAKAWA, R. MATSUMOTO AND A. KITA, OKI ELEC. IND., JAPAN 467
XXVN
IMAGE 13
SYMPOSIUM 1-8: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III GATE
DIELECTRICS AND MOS RELIABILITY II (11:10-12:10)
11:10 (1) THERMAL BUDGET FOR FABRICATING A DUAL GATE DEEP-SUBMICRON CMOS
WITH THIN PURE GATE OXIDE
K. SUZUKI, A. SATOH, T. AOYAMA, I. NAMURA, F. INOUE, Y. KATAOKA, Y. TADA
AND T. SUGII, FUJITSU LABS., JAPAN 470
11:30 (2) NEW DIELECTRIC BREAKDOWN MODEL OF LOCAL WEAROUT IN ULTRA THIN
SILICON DIOXIDES K. OKADA AND S. KAWASAKI*, MATSUSHITA AND *MATSUSHITA
ELEC. IND., JAPAN 473
11:50 (3) SUPERIOR IMMUNITY TO THE EFFECTS OF PLASMA-INDUCED CHARGING
DAMAGE ON THE HOT-CARRIER RELIABILITY OF MOSFET S WITH NO-NITRIDED SI02
GATE DIELECTRICS
B.W. MIN, L.K. HAN, M. BHAT, T.H. CHO, A.B. JOSHI*, R. MANN*, L. CHUNG*
AND D.L. KWONG, UNIV. TEXAS AND *ROCKWELL TELECOMMUNICATIONS, U.S.A 476
12:10-12:40 POSTER PREVIEW
PA-1 SYMPOSIUM I: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III
GATE INSULATOR PROCESS
(1) N20-ANNEALINDUCED LOCAL THINNING OF REGROWN OXIDE DUE TO NITROGEN
RESIDUE AT LOCOS
ISOLATION EDGES C. HUANG, K.T. SUNG, N.C. PENG, M. CHAO, Y. CHANG AND
F.C. SHONE, MACRONIX INTERNA TIONAL, TAIWAN, CHINA 479
(2) PROPERTIES OF STOICHIOMETRIC SILICON OXYNITRIDE FILMS
L.N. HE, T. INOKUMA AND S. HASEGAWA, KANAZAWA UNIV., JAPAN 482
(3) GROWTH KINETICS OF ULTRATHIN SILICON DIOXIDE FILMS FORMED BY RAPID
THERMAL OXIDATION
H. FUKUDA, K. AKASE, T. ENDOH AND S. NOMURA, MURORAN INST. TECHNOL.,
JAPAN 485 (4) LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF
SILICON-NITRIDE FILM FROM HEXACHLORODISILANE AND HYDRAZINE
W.C. YEH, R. ISHIHARA, S. MORISHITA AND M. MATSUMURA, TOKYO INST.
TECHNOL., JAPAN.. .488 (5) EXCELLENT QUALITY OF SI02 DIELECTRIC FILM
PREPARED BY ROOM-TEMPERATURE ION PLATING AND
ITS APPLICATION TO THIN-FILM TRANSISTORS T.-J. CHEN, C.-F. YEH, C.-L.
FAN AND J.-S. KAO*. NAT I CHIAO TUNG UNIV. AND *PRECISION
INSTRUMENT DEVELOPMENT CTR., NAT I SCIENCE COUNCIL, TAIWAN, CHINA 491
(6) SI02 THIN FILMS FORMATION BY REACTIVE EVAPORATION OF SIO AT A LOW
TEMPERATURE AND ITS
DEVICE APPLICATION T. SAMESHIMA AND G. LANGGUTH*, TOKYO UNIV. AGRI.
TECH. AND *MAX-PLANCK-INST., F.R.G., JAPAN 494
(7) INITIAL STAGE OF SI02/SI INTERFACE FORMATION ON HYDROGEN-TERMINATED
SILICON SURFACES
E. IIJIMA, T. AIBA, K. YAMAUCHI, H. NOHIRA, N. TATE*, M. KATAYAMA* AND
T. HATTORI, MUSASHI INST. TECHNOL. AND *SHIN-ETSU HANDOTAI, JAPAN 497
(8) THICKNESS-DECONVOLVED STRUCTURAL PROPERTIES OF THERMALLY GROWN
SILICON DIOXIDE FILM
K. ISHIKAWA, H. OGAWA, S. OSHIDA, K. SUZUKI AND S. FUJIMURA, FUJITSU,
JAPAN 500
SYMPOSIUM 1-9: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III
FERROELECTRIC THIN FILMS I (13:50-15:50)
13:50 (1) ATOMICALLY CONTROLLED FORMATION OF DIELECTRIC AND HIGH TC
OXIDE THIN FILMS BY LASER ABLATION (INVITED) T. KAWAI, OSAKA UNIV.,
JAPAN 503
14:20 (2) HIGH DIELECTRIC CONSTANT (BA, SR)TI03 THIN FILMS FOR ULSI DRAM
APPLICATION (INVITED) Y. MIYASAKA, NEC, JAPAN 506
14:50 (3) HIGH-FREQUENCY CHARACTERISTICS OF SRTI03 THIN FILMS IN THE
MM-WAVE BAND K. IKUTA, Y. UMEDA AND Y. ISHII, NTT, JAPAN 509
15:10 (4) FABRICATION AND CHARACTERIZATION OF THE SINGLE GRAINED PZT
THIN FILM J.-H. JOO AND S.-K. JOO, SEOUL NAT I UNIV., KOREA 512
15:30 (5) A COMPARISON OF DEFECT STATES IN TANTALUM PENTOXIDE (TA2OS)
FILMS AFTER RAPID THERMAL ANNEALING IN 02 OR N20 BY ZERO-BIAS THERMALLY
STIMULATED CURRENT SPECTROSCOPY W.S. LAU, K.K. KHAW AND N.P. SANDLER*,
NAT I UNIV. SINGAPORE AND *LAM RES., U.S.A., SINGAPORE 515
XXVUI
IMAGE 14
SYMPOSIUM MO: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III
FERROELECTRIC THIN FILMS II (16:10-17:50)
16:10 (1) FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY AND ITS
APPLICATIONS (INVITED) T. SUMI, MATSUSHITA, JAPAN 518
16:40 (2) A COMPARISON OF THE PROPERTIES OF CANDIDATE FERROELECTRIC
FILMS FOR NON VOLATILE MEMORIES (INVITED) A.I. KINGON, NORTH CAROLINA
STATE UNIV., U.S.A 521
17:10 (3) IMPRINT IN PZT CAPACITORS: CAUSES AND SOLUTIONS W.L. WARREN,
D. DIMOS, G.E. PIKE, B.A. TUTTLE, M.V. RAYMOND, R. RAMESH* AND J.T.
EVANS, JR.**, SANDIA NAT I LABS., *UNIV. MARYLAND AND **RADIANT
TECHNOLOGIES INC., U.S.A 524
17:30 (4) FERROELECTRIC PROPERTIES OF BAMGF4 FILMS GROWN ON SI(100),
(111), AND PT(LLL)/SI02/ SI(100) STRUCTURES
K. AIZAWA, T. ICHIKI AND H. ISHIWARA, TOKYO INST. TECHNOL., JAPAN 527
ROOM B
B-5: TFT DEVICES AND PROCESSING (9:20-10:50)
9:20 (1) DOES A LOW THERMAL BUDGET HELP US? -CRYSTALLIZATION, SI02 AND
TFT- (INVITED) T. SAMESHIMA, TOKYO UNIV. AGRI. TECH., JAPAN 530
9:50 (2) IMPACT OF FI A-ON-CURRENT GATE AIL-AROUND TFT (GAT) FOR 16MSRAM
AND BEYOND S. MAEGAWA, T. IPPOSHI, S. MAEDA, H. KURIYAMA, Y. KOHNO, Y.
INOUE AND T. HIRAO, MITSUBISHI ELEC., JAPAN 533
10:10 (3) HYDROGEN PASSIVATION ON THE GRAIN BOUNDARY AND INTRAGRANULAR
DEFECTS IN VARIOUS POLYSILICON THIN FILM TRANSISTORS
K.Y. CHOI, J.S. YOO, H.-S. CHO, M.K. HAN, Y.S. KIM* AND I.G. LIM**,
SEOUL NAT I UNIV., *MYONGJI UNIV. AND **LG ELEC. RES. CTR., KOREA 536
10:30 (4) PMOS THIN-FILM TRANSISTORS FABRICATED IN RTCVD POLYCRYSTALLINE
SILICON GERMANIUM FILMS
S.-K. LEE, H.-G. KIM, W.-J. CHUNG*, B.K. KANG AND O. KIM, POHANG UNIV.
SCI. TECH., AND *RIST, KOREA 539
SYMPOSIUM III: SOI TECHNOLOGY (11:10-17:50)
11:10 (1) SUB-0.2UM SILICON-ON-INSULATOR (SOI) CMOS: OPPORTUNITIES AND
CHALLENGES (INVITED) L.T. SU, IBM, U.S.A 542
11:40 (2) FORMATION OF SIGE SOURCE/DRAIN USING GE IMPLANTATION FOR
FLOATING-BODY EFFECT RESISTANT SOI MOSFETS A. NISHIYAMA, O. ARISUMI, M.
TERAUCHI, M. YOSHIMI, S. TAKENO AND K. SUZUKI, TOSHIBA, JAPAN 545
12:00 (3) VTH ROLLOFF FREE SUB 0.1 /UM SOI MOSFETS USING COUNTER DOPING
INTO A UNIFORMLY AND HEAVILY DOPED CHANNEL REGION A. SATOH, K. SUZUKI
AND T. SUGII, FUJITSU LABS., JAPAN 549
12:20 (4) IMPROVEMENT OF BREAKDOWN VOLTAGE IN SOI MOSFET USING
GATE-RECESS (GR) STRUCTURE J.-H. CHOI, Y.-J. PARK AND H.-S. MIN, SEOUL
NAT I UNIV., KOREA 551
13:50 (5) CHARACTERIZATION OF SOI SUBSTRATES FOR ULSI APPLICATIONS
(INVITED) S. CRISTOLOVEANU, LPCS, FRANCE 554
14:20 (6) THE STATUS AND FUTURE OF LOW-DOSE SIMOX TECHNOLOGY (INVITED)
M. IMAI, T. KATAYAMA AND J. JABLONSKI, KOMATSU ELEC. METALS, JAPAN 557
14:50 (7) A HIGH PERFORMANCE 0.05/UM MOSFET WITH THIN SOI/BURIED OXIDE
STRUCTURE K. OHUCHI, R. OHBA, H. NIIYAMA, K. NAKAJIMA AND T. MIZUNO,
TOSHIBA, JAPAN 560 15:10 (8) TWO-DIMENSIONALLY CONFINED CARRIER
INJECTION PHENOMENA IN SUB-10-NM-THICK SOI INSULATED-GATE PN-JUNCTION
DEVICES
Y. OMURA, NTT, JAPAN 563
15:50 (9) PROCESS TECHNOLOGY OF BONDED SOI WAFERS:RECENT DEVELOPMENT AND
QUALITY (INVITED) K. MITANI, SHIN-ETSU HANDOTAI, JAPAN 566
XXIX
IMAGE 15
16:20 (10) ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS(AMLCD S) AND ACTIVE
MATRIX ELECTROLUMINESCENT (AMEL) DISPLAYS USING
SILICON-ON-INSUIATOR(SOI) TECHNOLOGY (INVITED) A.C. IPRI, G. DOLNY, R.G.
STEWART, R. KHORMAEI*, C. KING*, M. SPITZER**, D.-P. VU**, T. KEYSER***,
G. BECKER***, D. KAGEY***, M. TILTON****, H. FRANKLIN*****,
R. ELLIS*****, M. JEPPSON*****, M. HELGESON***** AND S. NELSON*****,
DAVID SARNOFF RES. CTR., *PLANAR AMERICA, **KOPIN, ***ALLIED SIGNAL
AEROSPACE, ****STANDISH IND. AND *****HONEYWELL, U.S.A 569
16:50 (11) COMPARISON OF 1/4-MICRON-GATE FULLY-DEPLETED CMOS/SIMOX AND
BULK GATE ARRAYS FOR LOW-VOLTAGE, LOW-POWER APPLICATIONS Y. KADO, H.
INOKAWA, K. NISHIMURA, Y. OKAZAKI, M. SATO, T. OHNO, T. TSUCHIYA, M.
INO, K. TAKEYA AND T. SAKAI, NTT, JAPAN 572
17:10 (12) HIGH-SPEED 0.5/IM SOI 1/8 FREQUENCY DIVIDER WITH BODY-FIXED
STRUCTURE FOR WIDE RANGE OF APPLICATIONS T. IWAMATSU, Y. YAMAGUCHI, K.
UEDA, K. MASHIKO, Y. INOUE AND T. HIRAO, MITSUBISHI,
JAPAN 575
17:30 (13) NEW MOS CURRENT MODE LOGIC USING SOI-MOSFET WITH BODY
TERMINAL N. TERAO, T. MATSUMOTO, Y. KUDOH, S. PIDIN AND M. KOYANAGI,
TOHOKU UNIV., JAPAN... 578
18:30-20:45 RUMP SESSION A: ULTRA LARGE DIAMETER BULK, EPI. AND SOI
WAFERS FOR 1 GHZ MPU AND 1 G BIT DRAM
ROOM C
C-4: CMP/ISOLATION (9:20-10:50)
9:20 (1) PLANARIZATION BY POLISHING: CHEMICAL PROCESSES IN DIELECTRIC
AND METAL CMP (INVITED) L.M. COOK, RODEL, U.S.A 581
9:50 (2) ULTRA-UNIFORM CMP USING A HYDRO FILM BUFFERED CHUCK (HYDRO
CHUCK) Y. HAYASHI, T. NAKAJIMA AND T. KUNIO, NEC, JAPAN 584
10:10 (3) A POST GIGABIT GENERATION FLASH MEMORY SHALLOWTRENCH ISOLATION
SCHEME. THE LATI-STI PROCESS (LARGE TILT IMPLANTED SLOPED TRENCH
ISOLATION) USING 100% CMP PLANARIZATION. S. DELEONIBUS, M. HEITZMANN, Y.
GOBIL, F. MARTIN, O. DEMOLLIENS AND J.C. GUIBERT, LETI, FRANCE 587
10:30 (4) HIGHLY MANUFACTURABLE SHALLOW TRENCH ISOLATION FOR GIGA BIT
DRAM B.H. ROH, Y.H. CHO, Y.G. SHIN, C.G. HONG, S.D. GWUN, K.Y. LEE, H.G.
KANG, K.N. KIM AND J.W. PARK, SAMSUNG, KOREA 590
.1:10-12:30 POSTER PREVIEW
PC-5 SYMPOSIUM I: AMORPHOUS AND CRYSTALLINE INSULATING THIN FILMS III
INTERLAYER
(1) CHARACTERIZATION OF CHARGED TRAPS NEAR SI-SI02 INTERFACE IN
PHOTO-CVD SIOZ FILM
H. YAMAMOTO, S. IWASAKI, K. OKUMURA, T. KANASHIMA, M. OKUYAMA AND Y.
HAMAKAWA, OSAKA UNIV., JAPAN 593
(2) LEAKAGE CURRENT CONDUCTION MECHANISM OF LIQUID PHASE DEPOSITED
(LPD)SI02 FILM T.-H. FAN, S.-S. LIN AND C.-F. YEH, NAT I CHIAO TUNG
UNIV., TAIWAN, CHINA 596 (3) THE BEHAVIOR OF ALKOXY-FUNCTIONAL GROUPS ON
ATMOSPHERIC-PRESSURE CHEMICAL VAPOR DEPOSITION USING ALKOXYSILANE AND
OZONE
K. IKEDA AND M. MAEDA, NTT, JAPAN 599
(4) LOW DIELECTRIC CONSTANT FLUORINATED OXIDE FILMS PREPARED BY REMOTE
PLASMA CHEMICAL
VAPOR DEPOSITION S.M. LEE, M. PARK*, K.C. PARK, J.T. BAEK* AND J. JANG,
KYUNG HEE UNIV. AND *ETRI, KOREA 602
(5) DENSIFIED SIOF FILM FORMATION FOR PREVENTING WATER ABSORPTION H.
KUDO, R. SHINOHARA, S. TAKEISHI, N. AWAJI* AND M. YAMADA, FUJITSU AND
*FUJITSU LABS., JAPAN 605
XXX
IMAGE 16
(6) ELIMINATION OF AL LINE AND VIA RESISTANCE DEGRADATION UNDER HTS TEST
IN THE APPLICATION OF F-DOPED OXIDE AS INTERMETAL DIELECTRICS B.K.
HWANG, J.H. CHOI, S.W. LEE, K. FUJIHARA, U.I. CHUNG, S.I. LEE AND M.Y.
LEE, SAM SUNG, KOREA 608
(7) THE ORIGIN OF MICRO-LOADING EFFECT OF TEOS-03 OXIDE II U.I. CHUNG,
M.B. LEE, I.S. PARK, S.I. LEE AND M.Y. LEE, SAMSUNG, KOREA 611 (8)
THERMAL STABILITY OF AMOPHOUS ION BEAM SPUTTERED REFRACTORY OXIDES FOR
AR/HR DFB
COATINGS AND LOW LOSS OPTICAL WAVEGUIDE PURPOSES B. KEMPF AND H.W.
DINGES, DEUTSCHE BUNDESPOST TELEKOM, F.R.G 615
PC-6 DOPING AND CLEANING FOR SI
(1) ENHANCED BORON DIFFUSION IN THE BASE OF SIGE HBTS INDUCED BY
IMPLANTS INTO POLYSILICON EMITTERS
S. ITO AND S. NISHIKAWA, OKI ELEC. IND., JAPAN 617
(2) THE CLEANING OF PARTICLE AND METALLIC IMPURITY ON SI WAFER SURFACE
BY FLUORINE ETCHANT H. IZUMI, M. NOSE, S. OJIMA, K. KUBO AND T. OHMI,
TOHOKU UNIV., JAPAN 620 (3) SURFACE OBSERVATION AND MODIFICATION OF SI
SUBSTRATE IN SOLUTIONS
A. ANDO, K. MIKI, K. MATSUMOTO, T. SHIMIZU*, Y. MORITA* AND H. TOKUMOTO,
ETL AND *NAIR, JAPAN 623
(4) OXIDATION PROCESSES ON H-TERMINATED SI(100) SURFACES STUDIED BY
HIGH-RESOLUTION ELEC
TRON ENERGY LOSS SPECTROSCOPY H. IKEDA, K. HOTTA, S. FURUTA, S. ZAIMA
AND Y. YASUDA, NAGOYA UNIV., JAPAN 626 (5) ATOMIC-SCALE PLANARIZATION OF
6-INCH SI(001) SUBSTRATE BY UHV HEATING
K. IDOTA, M. NIWA AND I. SUMITA*, MATSUSHITA ELEC. IND. AND *MATSUSHITA
RES. INST.
TOKYO, JAPAN 629
PC-7 CHARACTERIZATION OF SI
(1) CHARACTERIZATION OF SURFACE POTENTIAL OF SI-SI02 INTERFACEBY
PHOTOREFLECTANCE SPECTROSCOPY
A. FUJIMOTO, T. IMAI*, M. OKUYAMA* AND Y. HAMAKAWA*, WAKAYAMA NAT I
COLL. TECHNOL. AND *OSAKA UNIV., JAPAN 632
(2) GAS-SURFACE INTERACTION INFLUENCE ON ELECTRICAL PROPERTIES OF NEW
GAS SENSITIVE METAL OXI
DE-METAL SANDWICH STRUCTURE
A. GALDIKAS, A. MIRONAS, D. SENULIENE AND A. SETKUS, SEMICONDUCTOR
PHYSICS INST., LITHUANIA 635
(3) ANGLE POSITION DETECTION USING A NOVEL DOUBLE HOLLOW FOUR QUADRANT
ORIENTATION DETEC
TOR FOR APPLICATION TO PATTERN RECOGNITION K.-C. LIN AND S.-C. LEE,
NAT I TAIWAN UNIV., TAIWAN, CHINA 638
(4) EFFECTS OF DIELECTRICS ON THE CHARACTERISTICS OF LARGE-AREA SILICON
MICROSTRIP SENSORS
W.-C. TSAY, Y.-A. CHEN, J.-W. HONG, A. CHEN, W.T. LIN, Y.H. CHANG, S.R.
HOU, S.L. HSU, C.R. LI, H.-J. TING* AND S.-T. CHIANG*, NAT I CENTRAL
UNIV. AND *ITRI, TAIWAN, CHINA 641
(5) MODELING AND ANALYSIS OF RF PLASMA USING ELECTRICAL EQUIVALENT
CIRCUIT
K. INO AND T. OHMI, TOHOKU UNIV., JAPAN 644
PC-8 TFT DEVICES AND PROCESSING
(1) EFFECTS OF CHANNEL THICKNESS ON POLY-CRYSTALLINE SILICON THIN FILM
TRANSISTORS
M. MIYASAKA, T. KOMATSU, W. ITOH, A. YAMAGUCHI AND H. OHSHIMA, SEIKO
EPSON, JAPAN 647
(2) BACK-GATE EFFECTS OF AMORPHOUS-SI TFTS WITH AN INORGANIC BLACK
MATRIX ON ARRAY
Y. KATO, Y. KAIDA, Y. MIYOSHI, M. ATSUMI, S.L. WRIGHT* AND L.F.
PALMATEER*. IBM JAPAN AND IBM THOMAS J. WATSON RES. CTR., U.S.A., JAPAN
650
(3) APPLICATION OF ELECTRON CYCLOTRON RESONANCE PLASMA THERMAL OXIDATION
TO BOTTOM GATE
POLYSILICON THIN FILM TRANSISTORS J.-I. HAN, J.-Y. LEE, D.-S. CHOI,
C.-K. KIM AND C.-H. HAN, KAIST, KOREA 653
(4) SELF-ALIGNED OFFSET GATED POLY-SI TFTS BY EMPLOYING A PHOTO RESISTOR
REFIOW PROCESS
C.-M. PARK, B.-H. MIN, K.-H. JANG, J.-H. JUN AND M.-K. HAN, SEOUL NAT I
UNIV., KOREA 656
XXXI
IMAGE 17
(5) HYDROGENATION OF POLYSILICON THIN FILM TRANSISTORS USING INDUCTIVELY
COUPLED PLASMA
S.-H. HUR, K.-S. CHOI, C.-K. KIM AND C.-H. HAN, KAIST, KOREA 659
(6) GRAIN BOUNDARY STRUCTURE AND BANDTAIL TRANSPORT IN HIGH MOBILITY
POLY-SI TFTS
T. SERIKAWA, S. SHIRAI, S. TAKAOKA*, K. NAKAGAWA*, K. OTO*, K. MURASE*
AND S.
ISHIDA**, NTT, *OSAKA UNIV. AND **SCIENCE UNIV. TOKYO, JAPAN 662
SYMPOSIUM V: BLUE/GREEN LIGHT EMITTERS AND RELATED MATERIALS SCIENCE
(13:50-17:50)
13:50 (1) BLUE/GREEN LIGHT EMITTERS BASED ON II-VI HETEROSTRUCTURES ON
ZNSE SUBSTRATES (INVITED) C. BONEY, D.B. EASON, Z. YU, W.C. HUGHES, J.W.
COOK, JR., J.F. SCHETZINA, G. CANTWELL* AND W.C. HARSCH*, NORTH CAROLINA
STATE UNIV. AND *EAGLE-PICHER, U.S.A... .665 14:15 (2) OBSERVATION OF
100 DARK LINE DEFECTS IN OPTICALLY DEGRADED ZNSXSE,_X-BASED LEDS BY
TRANSMISSION ELECTRON MICROSCOPY (INVITED) L. SALAMANCA-RIBA AND L.H.
KUO, UNIV. MARYLAND, U.S.A 668
14:40 (3) RT OPERATION OF ZNSE-ACTIVE-LAYER AND ZNCDSE-ACTIVE-LAYER
LASER DIODES H. OKUYAMA, N. NAKAYAMA, S. ITOH, M. IKEDA AND A.
ISHIBASHI, SONY, JAPAN 671 14:55 (4) LOW THRESHOLD AND LOW DIVERGENCE
BLUE VERTICAL-CAVITY SURFACE-EMITTING LASER DIODES T. YOKOGAWA, S.
YOSHII, A. TSUJIMURA, Y. SASAI AND J. MERZ*, MATSUSHITA ELEC. IND. AND
*UNIV. NOTRE DAME, U.S.A., JAPAN 674
15:10 (5) P- TYPE CONDUCTING ZNSE AND ZNSSE BY N2-GAS DOPING DURING
MOLECULAR BEAM EPITAXY Y. HISHIDA, T. YOSHIE, K. YAGI, K. YODOSHI AND T.
NIINA, SANYO ELEC, JAPAN 677 15:25 (6) CHARACTERIZATION AND IMPROVEMENTS
OF METAL-P TYPE ZNSE INTERFACES K. ANDO, T. HIRAKAWA, A. OHKI*, T. OHNO*
AND H. YONEZAWA*, TOTTORI UNIV. AND
*NTT, JAPAN 680
16:00 (7) FABRICATION AND PROPERTIES OF GAN-BASED QUANTUM WELL STRUCTURE
FOR SHORT WAVELENGTH LIGHT EMITTER (INVITED)
H. AMANO AND I. AKASAKI, MEIJO UNIV., JAPAN 683
16:25 (8) INGAN LIGHT-EMITTING DIODES WITH QUANTUM WELL STRUCTURES
(INVITED) S. NAKAMURA, NICHIA CHEM. IND., JAPAN 686
16:50 (9) OPTICAL GAIN OF WURTZITE GAN/ALGAN QUANTUM WELL LASERS T.
UENOYAMA, M. SUZUKI AND S. KAMIYAMA, MATSUSHITA ELEC. IND., JAPAN 689
17:05 (10) MBE GROWTH AND PROPERTIES OF GAN, ALXGA,.XN AND A1N ON
GAN/SIC SUBSTRATES S. FUJITA, M.A.L. JOHNSON, W.H. ROWLAND, JR., W.C.
HUGHES, Y.W. HE, N.A.E. MASRY,
J.W. COOK, JR., J.F. SCHETZINA, J. REN* AND J.A. EDMOND*, NORTH CAROLINA
STATE UNIV. AND *CREE RES., U.S.A 692
17:20-17:50 POSTER PREVIEW
PC-9 SYMPOSIUM V: BLUE/GREEN LIGHT EMITTERS AND RELATED MATERIALS
SCIENCE
(1) EXCITONIC EMISSIONS IN GAN FILMS ON A1N SUBSTRATES USING
MICROWAVE-EXCITED N PLASMA
EPITAXIAL GROWTH K. OKADA, A. KAI, Y. YAMADA, T. TAGUCHI AND H.
TANIGUCHI*, YAMAGUCHI UNIV. AND TOKUYAMA, JAPAN 695
(2) MBE GROWTH AND PROPERTIES OF ZNO ON SAPPHIRE AND SIC SUBSTRATES
M.A.L. JOHNSON, S. FUJITA, W.H. ROWLAND, JR., W.C. HUGHES, J.W. COOK,
JR., J.F. SCHETZINA, J. REN* AND J.A. EDMOND*, NORTH CAROLINA STATE
UNIV., AND *CREE RES., INC., U.S.A 699
(3) WITHDRAWN
(4) ROOM-TEMPERATURE EXCITONIC OPTICAL BISTABILITY IN ZNSE-ZNCDSE/CAF2
MULTIPLE QUANTUM WELLS.
Y.M. LU, L.C. CHEN, Z.P. GUAN, D.Z. SHEN AND X.W. FAN, ACADEMIA SINICA,
CHINA.. .701 (5) EFFECTS OF GAAS SURFACE PRETREATMENT AND POST-GROWTH
ANNEALING ON INTERFACE PROPERTIES OF MBE-ZNSE/GAAS(SUB.) SYSTEM Y.
YAMAGATA, T. SAWADA, K. IMAI, I. TSUBONO AND K. SUZUKI, HOKKAIDO INST.
TECHNOL.,
JAPAN 704
(6) SCHOTTKY BARRIER HEIGHT REDUCTION FOR P-ZNSE CONTACTS BY SULFUR
TREATMENT M. ONOMURA, S. SAITO, J. RENNIE, Y. NISHIKAWA, P.J. PARBROOK,
M. ISHIKAWA AND G. HATAKOSHI, TOSHIBA, JAPAN 707
XXXN
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(7) OPERATING CURRENT DEPENDENCE OF CDZNSE/ZNMGSSE LASER DIODES ON BAND
GAP AND CAR RIER CONCENTRATION OF P-TYPE CLADDING LAYER. S. NAKATSUKA,
J. GOTOH, K. MOCHIZUKI, A. TAIKE, M. KAWATA AND M. MOMOSE, HITACHI,
JAPAN 710
(8) MOMBE GROWTH OF NITROGEN-DOPED P-TYPE ZNSE G. SATO, T. NUMAI, M.
HOSHIYAMA, I. SUEMUNE, H. MACHIDA* AND N. SHIMOYAMA*, HOK KAIDO UNIV.
AND *TRICHEMICAL LAB., JAPAN 713
PC-L1 SYMPOSIUM V: BLUE/GREEN LIGHT EMITTERS AND RELATED MATERIALS
SCIENCE
(LI) RAMAN SCATTERING CHARACTERIZATION OF THE CRYSTALLINE QUALITIES OF
ZNSE FILMS GROWN ON S-PASSIVATED GAAS(LOO) SUBSTRATES J. WANG, X.H. LIU,
Z.S. LI, Z. LING, X.Y. HOU AND X. WANG, FUDAN UNIV., CHINA ... 1049
18:30-20:45 RUMP SESSION C: MEMORY DEVICE APPLICATION OF FERROELECTRIC
THIN FILMS
ROOM D
SYMPOSIUM VI: FABRICATION AND CHARACTERIZATION OF QUANTUM NANOSTRUCTURES
(9:20-10:40)
9:20 (0) INTRODUCTORY TALK Y. ARAKAWA, UNIV. TOKYO, JAPAN 9:30 (1)
INAS-GAAS QUANTUM DOT LASERS: IN SITUGROWTH, RADIATIVE LIFETIMES AND
POLARIZATION PRO PERTIES (INVITED)
D. BIMBERG, N.N. LEDENTSOV, N. KIRSTAEDTER, O. SCHMIDT, M. GRUNDMANN,
V.M. USTINOV*, A.Y. EGOROV*, A.E. ZHUKOV*, M.V. MAXIMOV*, P.S. KOP EV*,
Z.I. ALFEROV*, S.S. RUVIMOV**, U. GOSELE** AND J. HEYDENREICH**, TECH.
UNIV. BERLIN, *A.F. IOFFE
PHYSICAL-TECHNICAL INST., RUSSIA AND **MAX-PLANK-INST., F.R.G 716
10:00 (2) INAS/GAAS MULTI-COUPLED QUANTUM DOTS STRUCTURE ENABLING
HIGH-INTENSITY, NEAR-1.3-/MI EMISSION DUE TO CASCADE CARRIER TUNNELING
A. TACKEUCHI, Y. NAKATA, S. MUTO, T. INATA, T. USUKI, Y. SUGIYAMA, N.
YOKOYAMA AND O. WADA, FUJITSU LABS., JAPAN 719
10:20 (3) FIRST FABRICATION OF A RELIABLE ALGAAS/GAAS LED ON SI WITH
SELF-ASSEMBLED GAAS ISLANDS ACTIVE REGION Y. HASEGAWA, T. EGAWA, T.
JIMBO AND M. UMENO, NAGOYA INST. TECHNOL., JAPAN 722
11:00-12:10 POSTER PREVIEW
PD-3 NON SI MATERIALS
(1) FORMATION OF (411)A FACETED GAAS RIDGES USING CHEMICAL BEAM EPITAXY
J.-R. RO, S.-J. PARK, S.-B. KIM AND E.-H. LEE, ELEC. TELECOMM., KOREA
725
(2) SURFACE STOICHIOMETRY AND RECONSTRUCTION OF GAP(OOL)
M. YOSHIKAWA, A. NAKAMURA, T. NOMURA AND K. ISHIKAWA, SHIZUOKA UNIV.,
JAPAN 728 (3) HIGH CARBON DOPING OF GAAS AND ALAS IN DISTRIBUTED BRAGG
REFLECTORS
H.T. GRAHN, H. NORENBERG*, A. MAZUELAS, B. JENICHEN AND R. HEY,
PAUL-DRUDE-INST., F.R.G 731
(4) VALENCE BAND MODULATION IN INGAAS/INALAS SUPERLATTICES WITH
TENSILELY STRAINED WELLS
GROWN ON INGAAS QUASI-SUBSTRATE ON GAAS K. TOMINAGA, M. HOSODA, T.
WATANABE AND K. FUJIWARA*, ATR AND *KYUSHU INST. TECHNOL., JAPAN 734
(5) WITHDRAWN
(6) THE IN SITU GROWTH OF LATERAL CONFINEMENT ENHANCED
RECTANGULARALGAAS/ALAS QUANTUM
WIRES BY UTILIZING THE SPONTANEOUS VERTICAL QUANTUM WELLS W. PAN, H.
YAGUCHI, K. ONABE, R. ITO, N. USAMI* AND Y. SHIRAKI*. UNIV. TOKYO AND
*RCAST, JAPAN 737
(7) ROBUST QUANTUM LEVELS FOR ELECTRONS AND HOLES IN
N-ALXGAI.XAS/U-GAAS/U-ALXGAI.XAS
MODULATION-DOPED CORRUGATED DOUBLE HETEROJUNCTIONS K. VACEK AND T.
USAGAWA, HITACHI, JAPAN 740
(8) OPTICAL CHARACTERIZATION OF INAS QUANTUM DOTS FABRICATED BY
MOLECULAR BEAM EPITAXY
T. SAITOH, H. TAKEUCHI, J. KONDA AND K. YOH, HOKKAIDO UNIV., JAPAN 743
XXXIU
IMAGE 19
(9) ENHANCEMENT OF AVERAGE VELOCITY OF HOT CARRIERS IN APPROPRIATE
HETEROSTRUCTURES DUE TO
INVERSION OF DISTRIBUTION FUNCTIONS.
V.A. KOZLOV AND A.B. KOZYREV, RUSSIAN ACADEMY SCIENCES, RUSSIA 746
(10) ANOMALOUS EFFECT IN LA2.XSRXCU04 ON DOPING LEVEL X= 1/4
M. SUGAHARA, A. ITO, S. MAEJIMA, S.B. WU, H. GAO, K. UNO, X.Y. HAN, H.F.
LU, H. HANEJI AND N. YOSHIKAWA, YOKOHAMA NAT I UNIV., JAPAN 749
(11) VANISHING OF NEGATIVE DIFFERENTIAL RESISTANCE REGION DUE TO
ELECTRIC FIELD SCREENING IN WAN NIER-STARK LOCALIZATION TYPE
SELF-ELECTRO-OPTIC EFFECT DEVICES M. HOSODA, K. TOMINAGA, T. WATANABE
AND K. FUJIWARA*. ATR AND *KYUSHU INST. TECHNOL., JAPAN 752
(12) STUDY ON SULFUR PASSIVATION FOR CUINSE2 POLYCRYSTALLINE THIN FILM
WITH (NH4)2SX SOLUTION Y.H. CHENG, B.H. TSENG*, J.J. LOFERSKI AND H.L.
HWANG, NAT I TSING-HUA UNIV. AND NAT I SUN YAT SEN UNIV., TAIWAN, CHINA
755
(13) NITROGEN ION IMPLANTATION AND THERMAL ANNEALING IN SIC SINGLE
CRYSTAL
T. MIYAJIMA, N. TOKURA, A. FUKUMOTO*, H. HAYASHI* AND K. HARA,
NIPPONDENSO AND TOYOTA CENTRAL RES. & DEVELOP. LABS., JAPAN 758
(14) ELECTRONIC RAMAN SCATTERING AND DX CENTERS IN GANXALXAS: TE
S. LIAN, B. ZHOU, Z. CHEN, J. XU AND H. ZHOU, UNIV. XIAMEN, CHINA 761
(15) CATHODO-ELECTRO-LUMINESCENCE OF DIAMOND P-I-P LAYERED STRUCTURE T.
MAKI AND T. KOBAYASHI, OSAKA UNIV., JAPAN 764
(16) SIMPLE KINETIC MODEL OF ECR-RIBE REACOR FOR THE OPTIMIZATION OF
GAAS ETCHING PROCESS M. SUGIYAMA, T. YAMAIZUMI, M. NEZUKA*, Y.
SHIMOGAKI, Y. NAKANO, K. TADA AND H. KOMIYAMA, UNIV. TOKYO AND PLASMA
SYSTEM, JAPAN 767
PD-L2 LATE NEWS
(LI) PROPOSAL OF A TECHNIQUE TO DETECT SUB-SURFACE HOT ELECTRONS WITH A
SCANNING PROBE
MICROSCOPE F. VAZQUEZ, K. FURUYA AND D. KOBAYASHI, TOKYO INST, TECHNOL.,
JAPAN 1051 (L2) OBSERVATION OF THE ELECTRON REFLECTION FROM N~/N+
JUNCTION IN GAAS BY RESONANT TUNNEL ING THROUGH PSEUDOQUANTUM WELL IN
SINGLE BARRIER HETEROSTRUCTURE.
Y.V. DUBROVSKII, T.G. ANDERSSON*, Y.N. KHANIN, LA. LARKIN AND E.E.
VDOVIN, RUSSIAN ACADEMY SCIENCES AND *CHAIMERS UNIV. TECHNOL., SWEDEN,
RUSSIA 1053
(L3) RECONSTRUCTION DEPENDENT ELECTRON-HOLE RECOMBINATION ON GAAS(OOL)
SURFACES H. YAMAGUCHI, K. KANISAWA AND Y. HORIKOSHI, K. KANISAWA AND Y.
HORIKOSHI, NTT, JAPAN 1055
(L4) ORDERING PHENOMENON IN HIGHLY DOPED III-V SEMICONDUCTOR MATERIALS
V.A. BOGDANOVA, V.I. DUBOVIC, V.V. PRUDNIKOV AND N.A. SEMIKOLENOVA,
RUSSIAN ACADEMY SCIENCES, FUSSIA 1057
(L5) RUDUCTION OF THREADING DISLOCATION DENSITY IN INP-ON-SI
HETEROEPITAXY WITH STRAINED SHORT-PERIODS SUPERLATTICES K. SAMONJI, Y.
TAKAGI, H. YONEZU, K. IWAKI, N. OHSHIMA, J.K. SHIN AND K. PAK, TOYOHASHI
UNIV. TECHNOL., JAPAN 1059
(L6) THE APPLICATION OF CVD SI02 AND PECVD SI3N4 IN FABRICATION AND
PASSIVATION OF LONGWAVELENGTH HGCDTE PHOTODIODE ARRAYS V.M. EMEKSUZYAN,
L.N. ROMASHKO, G.Y. SALEEVA, T.I. ZAKHARYASH, N.K. TALIPOV, V.V.
VASIL EV AND V.N. OVSYUK, RUSSIAN ACADEMY SCIENCES, FUSSIA 1061
SYMPOSIUM VI: FABRICATION AND CHARACTERIZATION OF QUANTUM NANOSTRUCTURES
(13:50-18:10)
50 (1) ORDERED QUANTUM DOTS: A NEW SELF-ORGANIZING GROWTH MODE ON
HIGH-INDEX SEMICONDUC TOR SURFACES (INVITED) R. NOTZEL, J. TEMMYO*, A.
KOZEN*, T. TAMAMURA*, T. FUKUI AND H. HASEGAWA, HOK KAIDO UNIV. AND
*NTT, JAPAN 770
20 (2) STACKED INAS SELF-ASSEMBLED QUANTUM DOTS ON (001) GAAS GROWN BY
MOLECULAR BEAM EPITAXY Y. SUGIYAMA, Y. NAKATA, K. IMAMURA, S. MUTO AND
N. YOKOYAMA, FUJITSU LABS., JAPAN... 773
40 (3) PREFERENTIAL NUCLEATION OF NANOCRYSTALLINE SILICON ALONG
MICROSTEPS M. OTOBE, J. KAWAHARA AND S. ODA, TOKYO INST. TECHNOL., JAPAN
776
XXXIV
IMAGE 20
15:00 (4)
15:20 (5)
16:00 (6)
16:30 (7)
16:50 (8)
17:10 (9)
17:30 (10)
17:50 (11)
IN SITU DIRECT IMAGING OF SCANNING TUNNELING MICROSCOPE TIP APEX S.
HEIKE, T. HASHIZUME AND Y. WADA, HITACHI, JAPAN 779
CONFINEMENT POTENTIAL IN AN ASYMMETRICALLY BIASED QUANTUM POINT CONTACT
F. WAKAYA, J. TAKAHARA, S. TAKAOKA, K. MURASE AND K. GAMO, OSAKA UNIV.,
JAPAN .. .782 FORMATION AND CHARACTERIZATION OF ALGAAS QUANTUM WIRES ON
VICINAL (110) SURFACES (INVITED)
H. NAKASHIMA, M. TAKEUCHI, K. KIMURA, M. IWANE, H.K. HUANG, K. INOUE, J.
CHRISTEN*, M. GRUNDMANN** AND D. BIMBERG**, OSAKA UNIV.
*OTTO-VON-GUERICKE UNIV. MAGDEBURG AND **TECH. UNIV. BERLIN, F.R.G 785
SUBSTRATE MISORIENTATION EFFECT ON SELF-ORGANIZATION OF QUANTUM-WIRES
IN(GAP)M/(INP)M SHORT PERIOD BINARY SUPERLATTICES J. YOSHIDA, I. NOMURA,
A. KIKUCHI AND K. KISHINO, SOPHIA UNIV., JAPAN 788 PHOTOLUMINESCENCE AND
CATHODOLUMINESCENCE CHARACTERIZATION OF INGAAS RIDGE QUANTUM WIRES
FORMED BY SELECTIVE MOLECULAR BEAM EPITAXY
H. FUJIKURA AND H. HASEGAWA, HOKKAIDO UNIV., JAPAN 791
DESIGN AND FABRICATION OFINGAAS/GAAS QUANTUM WIRES FOR VERTICAL-CAVITY
SURFACE-EMIT TING LASERS
N. HATORI, T. MUKAIHARA, Y. HAYASHI, N. OHNOKI, F. KOYAMA AND K. IGA,
TOKYO INST. TECHNOL., JAPAN 794
A NOVEL LATERAL SURFACE SUPERLATTICE STRUCTURE UTILIZING SCHOTTKY
BARRIER HEIGHT CONTROL BY DOPED SILICON INTERFACE CONTROL LAYERS S.
KASAI AND H. HASEGAWA, HOKKAIDO UNIV., JAPAN 797
POLARIZATION CONTROLLED SPONTANEOUS EMISSION FROM A GALNASP/INP STRAINED
QW 2D PHOTONIC CRYSTAL T. BABA AND T. MATSUZAKI, YOKOHAMA NAT I UNIV.,
JAPAN 800
ROOM E
14:00-16:00 POSTER PRESENTATION PA-1 , PC-5 , PC-6 , PC-7 , PC-8 ,
PD-3 , PD-L2
AUGUST 24, THURSDAY
ROOM B
LB: LATE NEWS (9:20-12:10)
9:20 (LI) REAL-TIME TEM STUDIES OF ELECTROMIGRATION IN SUBMICRON
ALUMINUM RUNNERS S.P. RIEGE, A.W. HUNT AND J.A. PRYBYLA, AT&T BELL
LABS., U.S.A 1063
9:30 (L2) OCTAHEDRAL-STRUCTURED GIGANTIC PRECIPITATES AS THE ORIGIN OF
GATE-OXIDE DEFECTS IN
MOSLSIS M. ITSUMI, H. AKIYA, T. UEKI, M. TOMITA AND M. YAMAWAKI, NTT,
JAPAN 1065 9:40 (L3) DEPOSITION AND CHARACTERIZATION OF FLUORINE DOPED
SI02 FILMS USING ATMOSPHERIC PRESSURE
ORGANOSILANE/03 CHEMISTRY Y. NISHIMOTO, Y. YUYAMA, N. TOKUMASU AND K.
MAEDA, SEMICONDUCTOR PROCESS LAB., JAPAN 1067
9:50 (L4) PREPARATION OF SRBI2TA209 FILMS BY LASER ABLATION METHOD Y.
OISHI, K. FUMOTO, W. WU, M. OKUYAMA AND Y. HAMAKAWA, OSAKA UNIV., JAPAN
.. 1069 10:00 (L5) ULTRA-THIN FATIGUE FREE BI4TI3012 THIN FILMS FOR
NONVOLATILE FERROELECTRIC MEMORIES T. KIJIMA, S. SATOH, H. MATSUNAGA AND
M. KOBA, SHARP, JAPAN 1071
10:10 (L6) THREE-DIENSIONAL INTEGRATIONTECHNOLOGY BASED ONWAFERBONDING
TECHNIQUE USING MICRO BUMPS T. MATSUMOTO, Y. KUDOH, M. TAHARA, K.-H. YU,
N. MIYAKAWA*, H. ITANI**, T. ICHIKIZAKI**, A. FUJIWARA**, H. TSUKAMOTO**
ANDM. KOYANAGI, TOHOKU UNIV., *FUJI
XEROX AND **MITSUBISHI HEAVY IND., JAPAN 1073
10:20 (L7) OPTICALLY INTERCONNECTED KOHONEN NET FOR PATTERN RECOGNITION
T. DOI, T. NAMBA, A. UEHARA, M. NAGATA, S. MIYAZAKI, K. SHIBAHARA, S.
YOKOYAMA, A.
IWATA, T. AE AND M. HIROSE, HIROSHIMA UNIV., JAPAN
1075
XXXV
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10:30 (L8) LIGHT-EMITTING PN HOMO-JUNCTION DIODE WITH DIRECT DOPING INTO
POROUS SI
T. SUZUKI, T. SAKAI AND L. ZHANG, TOSHIBA, JAPAN 1077
10:40 (L9) STABLE OPERATION OF SINGLE ELECTRON LOGIC CIRCUITS WITH
FEED-BACK LOOP
K. MASU AND K. TSUBOUCHI, TOHOKU UNIV., JAPAN 1079
11:10 (L10) INP-BASED HIGH-PERFORMANCE MONOSTABLE-BISTABLE TRANSITION
LOGIC ELEMENTS (MOBILES)
USING RESONANT-TUNNELING DEVICES K.J. CHEN, K. MAEZAWA AND M. YAMAMOTO,
NTT, JAPAN 1081
11:20 (LLL) DIRECT OBSERVATION OF ELECTRON JET FROM A POINT CONTACT Y.
NAGAMUNE, T. NODA, H. WATABE, Y. OHNO, H. SAKAKI AND Y. ARAKAWA, NTT,
JAPAN.. 1081
11:30 (LI2) COHERENT RESONANT TRANSPORT AND COULOMB BLOCKADE
OSCILLATIONS THROUGH QUANTUM DOT
STRUCTURES WITH A NOVEL GATE CONFIGURATION REALIZED FROM A PSEUDOMORPHIC
ALGAAS/
INGAAS/GAAS HETEROSTRUCTURE T.H. WANG, T. HONDA AND S. TARUCHA, NTT,
JAPAN 1085
11:40 (L13) REGULAR ARRAY FORMATION OF SELF-ASSEMBLED INAS DOTS GROWN ON
PATTERNED (LLL)B GAAS SUBSTRATE BY MBE T. SAITOH, A. TANIMURA AND K.
YOH, HOKKAIDO UNIV., JAPAN 1087
11:50 (LI4) OBSERVATION OF OD SUBBAND STRUCTURES IN SINGLE QUANTUM DOTS
BY MICROSCOPIC PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY M. NOTOMI, T.
FURUTA, H. KAMADA, J. TEMMYO AND T. TAMAMURA, NTT, JAPAN 1089
12:00 (L15) FIRST EPITAXIAL GROWTH OF ZINCBLENDE ZNSE/MGS SUPERLATTICES
T. OBINATA, H. KUMANO, K. UESUGI, J. NAKAHARA AND I. SUEMUNE, HOKKAIDO
UNIV., JAPAN 1091
B-6: HOT-CARRIER EFFECTS IN MOSFETS (13:50-15:20)
13:50 (1) EXTREME-SUBMICRON SI-BASED MOSFETS:SCALING CHARACTERISTICS AND
ENGINEERING TRADEOFFS
(INVITED)
D.A. ANTONIADIS, MASSACHUSETTS INST. TECHNOL., U.S.A 803
14:20 (2) HOT-CARRIER RELIABILITY OF 0.1 PM DELTA-DOPED MOSFETS K. NODA,
T. UCHIDA, T. TATSUMI AND C. HU*. NEC AND *UNIV. CALIFORNIA, U.S.A.,
JAPAN 806
14:40 (3) ANALYSIS OF STRUCTURE-DEPENDENT HOT CARRIER EFFECT IN VARIOUS
LDD MOSFET S USING AN EFFICIENT INTERFACE STATE PROFILING METHOD J.-J.
YANG, S.S. CHUNG, P.-C. CHOU, J.-R. SHIH*, C.-H. CHEN* AND M.-S. LIN*,
NAT I CHIAO TUNG UNIV. AND *TAIWAN SEMICONDUCTOR MANUFACTURING, TAIWAN,
CHINA 809 15:00 (4) ANALYSIS OF MECHANISMS FOR HOT-CARRIER-INDUCED VLSI
CIRCUIT DEGRADATION
Y. HUH, D. YANG, S. KIM AND Y. SUNG*, LG SEMICON AND *KOREA UNIV., KOREA
812
B-7: DEVICE CHARACTERIZATION (15:40-17:00)
15:40 (1) LARGE 1/F NOISE IN POLYSILICON TFT LOADS AND ITS EFFECTS ON
THE STABILITY OF SRAM CELLS M. AOKI, T. HASHIMOTO, T. YAMANAKA AND T.
NAGANO, HITACHI, JAPAN 815
16:00 (2) A NOVEL TECHNIQUE FOR INVESTIGATING HOT-ELECTRON-INDUCED OXIDE
DAMAGES AND DEVICE DEGRADATIONS IN SUBMICRON LDD N-MOSFET S G.-H. LEE
AND S.S. CHUNG, NAT I CHIAO TUNG UNIV., TAIWAN, CHINA 818
16:20 (3) LATERAL CARRIER PROFILE MEASUREMENT UNDER QUARTER-MICRON MOS
DEVICES USING CHEMICAL ETCH/AFM METHOD H. HASEGAWA, N. KODAMA, J.
HAYASHI AND S. SAITO, NEC, JAPAN 821
16:40 (4) STATISTICAL PERFORMANCE-INSTABILITY DUE TO THREE-DIMENSIONAL
NONUNIFORMITY OF DOPANT ATOMS IN A SYSTEM OF MANY MOSFETS T. MIZUNO,
TOSHIBA, JAPAN 824
ROOM C
C-5: OTHERS (9:20-10:40)
9:20 (1) DIRECT OBSERVATION OF WORKING VACUUM TUNNEL JUNCTIONS USING A
TRANSMISSION ELECTRON
MICROSCOPE M.I. LUTWYCHE AND Y. WADA, HITACHI, JAPAN 827
XXXVI
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9:40 (2) HIGH-EFFICIENCY MICROMIRRORS AND BRANCHED OPTICAL WAVEGUIDES ON
SI CHIPS T. NAMBA, A. UEHARA, T. DOI, T. NAGATA, Y. KURODA, S. MIYAZAKI,
K. SHIBAHARA, S. YOKOYAMA, A. IWATA AND M. HIROSE, HIROSHIMA UNIV.,
JAPAN 830
10:00 (3) CONTACTLESS AND NONDESTRUCTIVE CHARACTERIZATION OF SILICON
SURFACES BY CAPACITANCEVOLTAGE AND PHOTOLUMINESCENCE METHODS S.
KOYANAGI, M. AKAZAWA AND H. HASEGAWA, HOKKAIDO UNIV., JAPAN 833
10:20 (4) X-RAY REFLECTOMETRY AND INFRARED ANALYSIS OF NATIVE OXIDES ON
SI(100) FORMED IN CHEMICAL TREATMENT Y. SUGITA, N. AWAJI, S. OHKUBO, S.
WATANABE, S. KOMIYA AND T. ITO, FUJITSU LABS., JAPAN 836
11:00-12:30 POSTER PREVIEW
PC-10 SYMPOSIUM III: SOI TECHNOLOGY
(1) THIN-SOI PROCESS USING BONDING AND ETCH-BACK METHOD WITHOUT
EPITAXIAL GROWTH
H. UNNO AND K. IMAI, NTT, JAPAN 839
(2) X-RAY TOPOGRAPHIC INVESTIGATIONS ON BONDED SILICON ON INSULATOR
(BESOI) WAFERS
T. ABE, H. TAKENO, K. SAWAI* AND T. TAKAMA*, SHIN-ETSU HANDOTAI AND
*HOKKAIDO UNIV., JAPAN 842
(3) ADVANCED QUALITY IN EPITAXIAL LAYER TRANSFER BY BOND AND ETCH-BACK
OF POROUS SI
N. SATO, K. SAKAGUCHI, K. YAMAGATA, Y. FUJIYAMA, J. NAKAYAMA AND T.
YONEHARA, CANON, JAPAN 845
(4) PARTIALLY BONDED SOI SUBSTRATES FOR INTELLIGENT POWER ICS
H. KIKUCHI AND K. ARAI, NEC, JAPAN 848
(5) SOI LIGBT STRUCTURE WITH THE COLLECTOR-SHORT REGION FOR IMPROVED
LATCH-UP PERFOR
MANCE H. SUMIDA AND A. HIRABAYASHI, FUJI ELEC, JAPAN 851
(6) COMPARISON OF STANDARD AND LOW-DOSE SIMOX SUBSTRATES FOR 0.15/UM SOI
MOSFET
APPLICATIONS H.-O. JOACHIM, Y. YAMAGUCHI, T. FUJINO, T. KATO, Y. INOUE
AND T. HIRAO, MITSUBISHI, JAPAN 854
(7) ADVANTAGES OF ULTRA-THIN SIMOX/CMOS BASED ON WEIL-ESTABLISHED O.SFIM
MASS-PRODUC
TION TECHNOLOGIES FOR LOW POWER IV PLL CIRCUITS O. TSUBOI, S. WARASHINA,
K. SUKEGAWA, S. KAWAI, S. KAWAMURA, S. SEKINE, K. TAKADA AND Y. SUZUKI,
FUJITSU, JAPAN 857
(8) ANALYSIS OF SI-GE SOURCE STRUCTURE IN 0.15 ^M SOI MOSFETS USING
TWO-DIMENSIONAL
DEVICE SIMULATION O. ARISUMI, K. MATSUZAWA, N. SHIGYO, M. TERAUCHI, A.
NISHIYAMA AND M. YOSHIMI, TOSHIBA, JAPAN 860
(9) MODELING ON THE CHANNEL-TO-S/D CAPACITANCE AND THE SHORT CHANNEL
EFFECT FOR 0.1 //M
FULLY DEPLETED SOI-MOSFET R. KOH, H. KATO AND H. MATSUMOTO, NEC, JAPAN
863
(10) AN ACCURATE IMPACT IONIZATION CURRENT MODEL FOR LDD SOI MOSFETS
S. PIDIN, N. TERAO, T. MATSUMOTO, Y. INOUE* AND M. KOYANAGI, TOHOKU
UNIV. AND MITSUBISHI ELEC, JAPAN 866
PC-11 ADVANCED MOS DEVICES
(1) A 0.25//M CMOSFET USING HALO IMPLANTATION FOR 1GB DRAM
D.J. JUNG, J.K. PARK, K.Y. LEE, N. KANG, K.N. KIM, T.E. SHIM AND J.W.
PARK, SAM SUNG, KOREA 869
(2) SUBSTRATE ENGINEERING FOR REDUCTION OF A-PARTICLE-INDUCED CHARGE
COLLECTION EFFICIENCY
T. YAMASHITA, S. KOMORI, T. KUROI, M. INUISHI AND T. HIRAO, MITSUBISHI
ELEC, JAPAN.. .872
(3) A COMPARATIVE STUDY OF INTERFACE TRAP INDUCED DRAIN LEAKAGE CURRENT
IN VARIOUS
N-MOSFET STRUCTURES T. WANG, T.-E. CHANG, L.P. CHIANG AND C. HUANG+,
NAT I CHIAO TUNG UNIV. AND MACRONIX INTERN., TAIWAN, CHINA 875
XXXVN
IMAGE 23
(4) RELIABILITY OFNON-UNIFORMLY DOPED CHANNEL (NUDC) MOSFETS FOR
SUB-QUARTER-MICRON
REGION M. SHIRAHATA, Y. OKUMURA, Y. ABE, T. KUROI, M. INUISHI AND T.
HIRAO, MITSUBISHI ELEC, JAPAN 878
(5) AN EXPERIMENTAL STUDY OF IMPACT IONIZATION PHENOMENA IN SUB-O.L/IM
SI MOSFETS
A. HORI, A. HIROKI, K.M. AKAMATSU AND S. ODANAKA, MATSUSHITA ELEC. IND.,
JAPAN 881 (6) INFLUENCE OF N20-OXYNITRIDATION ON INTERFACE TRAP
GENERATION IN SURFACE-CHANNEL PMOSFETS
T. MATSUOKA, S. TAGUCHI, K. TANIGUCHI, C. HAMAGUCHI, S. KAKIMOTO* AND K.
UDA*, OSAKA UNIV. AND SHARP, JAPAN 884
(7) STRESS EFFECT ON THE RELIABILITY OF PMOS TFTS FOR 16 MB SRAM: DC
STRESS AT ROOM AND
ELEVATED TEMPERATURES K.S. SON, H.K. YOON, Y.J. LEE, S. AHN AND D.M.
KIM#, HYUNDAI ELEC IND. AND *POHANG UNIV. SCI. & TECH., KOREA 887
(8) DEVELOPMENT OF SUB-QUARTER-/IM MONOS TYPE MEMORY TRANSISTOR
T. BOHM, A. NAKAMURA, H. AOZASA, M. YAMAGISHI AND Y. KOMATSU, SONY,
JAPAN 890
PC-12 ISOLATION
(1) A HIGH PRESSUREHIGH TEMPERATURE POLY BUFFER LOCOS (HP-HTPBL)
ISOLATION PROCESS FOR
1GBIT DENSITY NON VOLATILE MEMORIES. S. DELEONIBUS, F. MARTIN, S.S.
KIM*, A. EMAMI*, B. FLORIN, M. HEITZMANN AND
C. LEROUX, LETI AND *GASONICS INTERN., U.S.A., FRANCE 893
(2) A NOVEL PLANARIZATION OF TRENCH ISOLATION USING A POLYSILICON LAYER
AS A SELF-ALIGNED
MASK J.-Y. CHENG, T.F. LEI, T.S. CHAO AND D.L.W. YEN*, NAT I CHIAO TUNG
UNIV. AND *MACRONIX INTERN., TAIWAN, CHINA 896
(3) DRY 02 HIGH PRESSURE FIELD OXIDATION FOR 0.25 JIM ISOLATION
TECHNOLOGY
V.K. MATHEWS, P.C. FAZAN, N. JENG, S.S. KIM* AND A. EMAMI*, MICRON
TECHNOL. AND *GASONICS INTERN., U.S.A 899
PC-13 SI DEVICE PROCESS
(1) NEW CRYSTALLIZATION PROCESS OF LPCVD A-SI FILMS BELOW 530C USING
METAL ADSORPTION
METHOD D.K. SOHN, J.N. LEE AND B.T. AHN, KAIST, KOREA 902
(2) COMBINATION OF CHEMICAL MECHANICAL POLISHING AND ULTRAHIGH VACUUM
CHEMICAL VAPOR
DEPOSITION TECHNIQUES TO FABRICATE POLYCRYSTALLINE THIN FILM TRANSISTORS
C.-Y. CHANG, H.-Y. LIN, J.C. HWU, J.-Y. CHENG, T.F. LEI, L.-P. CHEN* AND
B.-T. DAI*, NAT I CHIAO TUNG UNIV. AND *NAT L NANO DEVICE LAB., TAIWAN,
CHINA 905
(3) PREAMORPHIZATION OF THE CHANNEL REGION OF MOS DEVICES FOR SHALLOW
COUNTER DOPING
M. MIYAKE, Y. OKAZAKI AND T. KOBAYASHI, NTT, JAPAN 908
(4) DIFFUSION AND SEGREGATION OF NITROGEN IN POLYCRYSTALLINE SILICON AND
AT THE POLY-SI/SI02
INTERFACE
S. NAKAYAMA AND T. SAKAI, NTT, JAPAN 911
(5) IMPACT OF A HIGH CONCENTRATION FLUORINE LAYER ON CARRIERS TRANSPORT
AT THE POLY-SI/SI
INTERFACE
T.P. CHEN, T.F. LEI AND C.Y. CHANG, NAT I CHIAO TUNG UNIV., TAIWAN,
CHINA 914 (6) CYCLOTRON RESONANCE INVESTIGATION OF MULTI-QUANTUM-WELL
HETEROSTRUCTURES GE/GEI.XSIX
V.Y. ALESHKIN, N.A. BEKIN, I.V. EROFEEVA, V.I. GAVRILENKO, Z.F.
KRASIL NIK, O.A. KUZNETSOV, M.D. MOLDAVSKAYA, V.V. NIKONOROV, L.V.
PARAMONOV AND V.M. TSVETKOV, RUSSIAN ACADEMY SCIENCES, RUSSIA 917
(7) IDENTIFICATION OF MOS GATE DIELECTRIC-BREAKDOWN SPOT USING
HIGH-SELECTIVITY ETCHING R. SUGINO, T. NAKANISHI, K. TAKASAKI AND T.
ITO, FUJITSU LABS., JAPAN 920
C-6: DEVICE PROCESS AND AMORPHOUS DEVICES (13:50-16:50)
50 (1) SEQUENTIAL THERMAL CVD PROCESS USING FAST THERMAL PROCESSOR(FTP)
(INVITED) K. OKUMURA AND Y. TSUNASHIMA, TOSHIBA, U.S.A 923
20 (2) AL-SELECTIVE CVD INDUCED BY HYDROGEN DESORPTION ON SI H. SAKAUE,
Y. KATSUTA, S. KONAGATA, S. SHINGUBARA AND T. TAKAHAGI, HIROSHIMA UNIV.,
JAPAN 926
XXXVIII
IMAGE 24
14:40 (3) SPECIALTY GAS INTERACTIONS WITH VARIOUS SILICON SURFACES Y.
SHIRAI, M. NAKAMURA AND T. OHMI, TOHOKU UNIV., JAPAN 929
15:00 (4) LARGE DIAMETER EPITAXIAL WAFERS FOR FUTURE ULSI (INVITED) J.H.
MATLOCK, SHIN-ETSU HANDOTAI-AMERICA, U.S.A 932
15:50 (5) THE CONTROL OF SIDELOBE INTENSITY WITH ARRANGEMENT OF THE
CHROME PATTERN (COSAC) IN HALF-TONE PHASE-SHIFTING MASK S. KOBAYASHI, N.
OKA, K. WATANABE, M. INOUE AND K. SAKIYAMA, SHARP, JAPAN 935
16:10 (6) AN AMORPHOUS AVALANCHE PHOTO-DIODE WITH A LARGE CONDUCTIONBAND
EDGE DISCONTINUITY S. SUGAWA, H. KOZUKA, T. ATOJI, H. TOKUNAGA, H.
SHIMIZU AND K. OHMI, CANON, JAPAN... 938 16:30 (7) DOUBLE GRADED-GAP
A-SIC:H P-I-N THIN-FILM LED WITH COMPOSITION-GRADED N-LAYER AND
CARBON-INCREASING P-LAYER
Y.-A. CHEN, J.-K. CHEN, W.-C. TSAY, J.-W. HONG AND C.-Y. CHANG*, NAT I
CENTRAL UNIV. AND NAT I CHIAO TUNG UNIV., TAIWAN, CHINA 941
ROOM D
D-6: III-V FET S & PROCESSING (9:20-11:30)
9:20 (1) INP HEMT:AN EMERGING TECHNOLOGY FOR MILLIMETERWAVE APPLICATIONS
(INVITED) L.D. NGUYEN, HUGHES RES. LABS., U.S.A 944
9:50 (2) SINGLE VOLTAGE SUPPLY HIGH EFFICIENCY INGAAS PSEUDOMORPHIC
DOUBLE-HETERO HEMTS WITH PLATINUM BURIED GATES T. TANIMOTO, I. OHBU, S.
TANAKA, H. MATSUMOTO, A. TERANO AND T. NAKAMURA, HITACHI, JAPAN 947
10:10 (3) A BURIED-CHANNEL WNX/W SELF-ALIGNED GAAS MESFET WITH HIGH
POWER-EFFICIENCY AND LOW NOISE-FIGURE FOR SINGLE-CHIP FRONT-END MMIC IN
PERSONAL HANDY PHONE SYSTEM K. NISHIHORI, A. KAMEYAMA, Y. KITAURA, Y.
IKEDA, M. NAGAOKA, Y. TANABE, M. MIHARA, M. YOSHIMURA, M. HIROSE AND N.
UCHITOMI, TOSHIBA, JAPAN 950
10:30 (4) OXIDATION USING AFM AND SUBSEQUENT ETCHING IN WATER OF
INVERTED-TYPE 5-DOPED HEMT M. ISHII AND K. MATSUMOTO, ETL, JAPAN 953
10:50 (5) ELECTRICAL PROPERTIES OF FERROELECTRIC GATE HEMT STRUCTURES S.
OHMI, M. YOSHIHARA, T. OKAMOTO, E. TOKUMITSU AND H. ISHIWARA, TOKYO
INST. TECHNOL., JAPAN 956
11:10 (6) 0.86EV PLATINUM SCHOTTKY BARRIER ON INDIUM PHOSPHIDE BY
IN-SITU ELECTROCHEMICAL PROCESS AND ITS APPLICATION TO MESFETS S. UNO,
T. HASHIZUME, S. KASAI, N.-J. WU AND H. HASEGAWA, HOKKAIDO UNIV.,
JAPAN.. .959
11:50-12:35 POSTER PREVIEW
PD-4 SYMPOSIUM VI: FABRICATION AND CHARACTERIZATION OF QUANTUM
NANOSTRUCTURES
(1) FABRICATION OF QUANTUM WIRE AND MINUTE BURIED HETEROSTRUCTURE BY
IN-SITU ETCHING AND SELECTIVE MOCVD GROWTH
M. OGURA, X.L. WANG, H. MATSUHATA, T. TADA, A. HAMOUDI, S. IKAWA, T.
MIYAGAWA AND K. TAKEYAMA, ETL, JAPAN 962
(2) EXPERIMENTAL DETERMINATION OF THE CONDUCTION WIDTH IN QUASI
BALLISTIC WIRES
Y. OCHIAI, K. YAMAMOTO, K. ISHIBASHI*, J.P. BIRD*, Y. AOYAGI*, T.
SUGANO*, K. TANKEI** AND Y. NAGAOKA***, CHIBA UNIV., *RIKEN, **MATSUSAKA
UNIV. AND ***KYOTO UNIV., JAPAN 965
(3) NANOMETER-SIZED SILICON CRYSTALLITES PREPARED BY EXCIMER LASER
ABLATION IN CONSTANT
PRESSURE INERT GAS AMBIENT T. YOSHIDA, Y. YAMADA, T. ORII* AND S.
TAKEYAMA, MATSUSHITA RES. INST. TOKYO AND *UNIV. TSUKUBA, JAPAN 968
(4) MICROSTRUCTURE OF SI SURFACE EPITAXIALLY GROWN IN SIH4-H2 SYSTEM
Y. KUNII AND M. NAGASE, NTT, JAPAN 971
(5) ENHANCEMENT OF THE EXCITONIC EFFECTS IN SEMICONDUCTOR THIN QUANTUM
BOXES WITH LARGE
LATERAL SIZE
H. GOTOH, H. ANDO AND H. KANBE, NTT, JAPAN 974
(6) THE CAPACITANCE OF NANO-STRUCTURES
T. OHBA AND K. NATORI, UNIV. TSUKUBA, JAPAN 977
XXXIX
IMAGE 25
PD-5 OPTICAL DEVICES
(1) 380 FS ELECTRICAL
PULSE GENERATION FROM 100 NM INSULATOR-GAP PHOTOCONDUCTIVE SWITCHES
FABRICATED BY AN ATOMIC FORCE MICROSCOPE T. ITATANI, K. SEGAWA, K.
MATSUMOTO, M. ISHII, T. NAKAGAWA, Y. SUGIYAMA AND K. OHTA, ETL, JAPAN
980
(2) RESONANT-TUNNELING INJECTION HOT ELECTRON LASER: RECIPE FOR
COMPLEMENTARY MODULATION
USING DYNAMIC CARRIER HEATING V.I. TOLSTIKHIN AND M. WILLANDER,
LINKOPING UNIV., SWEDEN 983
(3) INFLUENCE OF BIPOLAR QUANTUM TRANSPORT ON GAIN CHARACTERISTICS OF
STRAINED-MQW LASERS
H. TSUCHIYA, Y. HAYASHI AND T. MIYOSHI, KOBE UNIV., JAPAN 986
(4) A NOVEL SHORT CAVITY LASER WITH DEEP GRATING DBRS
T. BABA, M. HAMASAKI, N. WATANABE, A. MATSUTANI*, T. MUKAIHARA*, F.
KOYAMA* AND
K. IGA*, YOKOHAMA NAT I UNIV. AND *TOKYO INST. TECHNOL., JAPAN 989
(5) DEVICE PHYSICS AND MODELING OF MULTIPLE QUANTUM WELL INFRARED
PHOTODETECTORS
M. ERSHOV, C. HAMAGUCHI* AND V. RYZHII, UNIV. AIZU AND *OSAKA UNIV.,
JAPAN 992 (6) SUPERIOR DETECTIVITY OF (111) GAAS/ALGAAS P-TYPE QW
INFRARED PHOTODETECTOR
T. CHO, H. KIM, S. HONG AND Y. KWON, KAIST, KOREA 995
(7) HIGH EFFICIENCY MONOLITHIC GAAS/SI TANDEM SOLAR CELL GROWN BY
METALORGANIC CHEMICAL VAPOR DEPOSITION T. SOGA, M. YANG, T. JIMBO AND M.
UMENO, NAGOYA INST. TECHNOL., JAPAN
998
(8) DOUBLE-FUNCTION LIGHT-EMITTING-DIODE ARRAY
M. TANINAKA, M. OGIHARA, T. SHIMIZU AND Y. NAKAMURA, OKI ELEC. IND.,
JAPAN 1001
D-7: CHARACTERIZATION (13:50-15:20)
13:50 (1) REAL-TIME OPTICAL DIAGNOSTICS OF EPITAXIALLY GROWN
SEMICONDUCTORS (INVITED)
D.E. ASPNES, NORTH CAROLINA STATE UNIV., U.S.A
1004
14:20 (2) PHOTOELLIPSOMETRY CHARACTERIZATION OF IN0.46GA0.S4P/N+-GAAS
HETEROSTRUCTURES
T. SAITOH, K. WATANABE, Y.-M. XIONG AND F. HYUGA*, TOKYO UNIV. AGRI.
TECH. AND
*NTT, JAPAN
1007
14:40 (3) IN SITU DISTINCTION OF AS-RICH INITIAL SURFACES BY MILLISECOND
TIME-RESOLVED REFLECTANCE
DIFFERENCE
J. CUI, S. ZHANG, A. TANAKA* AND Y. AOYAGI, RIKEN AND *BENTEC, JAPAN
1010
15:00 (4) SCANNING TUNNELING MICROSCOPE STUDY OF (001) INP SURFACE
PREPARED BY GAS SOURCE
MOLECULAR BEAM EPITAXY B.X. YANG, Y. ISHIKAWA, T. OZEKI AND H. HASEGAWA,
HOKKAIDO UNIV., JAPAN 1013
D-8: EPITAXIAL GROWTH (15:40-17:20)
15:40 (1)
16:00 (2)
16:20 (3)
16:40 (4)
17:00 (5)
A NOVEL MATERIAL OF GALNNAS FOR LONG-WAVELENGTH-RANGE LASER DIODES WITH
EXCELLENT HIGH-TEMPERATURE PERFORMANCE M. KONDOW, K. UOMI, A. NIWA, T.
KITATANI, S. WATAHIKI AND Y. YAZAWA, HITACHI, JAPAN. 1016
SIMULATION AND OBSERVATION OF THE STEP BUNCHING PROCESS GROWN ON GAAS
(001) VICINAL SURFACE BY METALORGANIC VAPOR PHASE EPITAXY J. ISHIZAKI,
K. OHKURI AND T. FUKUI, HOKKAIDO UNIV., JAPAN 1019
STRAIN RELAXATION PROCESSES IN GAAS ON SI BY TWO GROUPS OF MISFIT
DISLOCATIONS M. TAMURA, T. SAITOH AND T. YODO, OTL, JAPAN 1022
IMPURITY-FREE DISORDERING OF INGAAS/INGAALAS/INP QUANTUM WELLS BY
DIELECTRIC THIN
CAP FILMS AND ITS IN-PLANE SPATIAL RESOLUTION S. SUDO, H. ONISHI, Y.
NAKANO, Y. SHIMOGAKI, K. TADA, M.J. MONDRY* AND L.A. COLDREN*, UNIV.
TOKYO AND *UNIV. CALIFORNIA, U.S.A., JAPAN 1025
CONTROLLED DISORDERING OF COMPRESSIVELY STRAINED INGAASP MULTIPLE
QUANTUM WELLS UNDER SIO:P ENCAPSULANT AND APPLICATION TO LASER-MODULATOR
INTEGRATION A. HAMOUDI, E.V.K. RAO, P. KRAUZ, A. RAMDANE, A. OUGAZZADEN,
D. ROBEIN AND H. THIBIERGE, FRANCE TELECOM/CNET/PAB, FRANCE 1028
ROOM E
14:00-16:00 POSTER PRESENTATION PC-9 , PC-L1 , PC-10 , PC-11 ,
PC-12 , PC-13 , PD-4 , PD-5
XXXX
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| publishDateSearch | 1995 |
| publishDateSort | 1995 |
| publisher | Japan Soc. of Applied Physics |
| record_format | marc |
| spelling | International Conference on Solid State Devices and Materials 1995 Osaka Verfasser (DE-588)5172325-6 aut Extended abstracts of the 1995 International Conference on Solid State Devices and Materials August 21 - 24, 1995, Osaka Tokyo Japan Soc. of Applied Physics 1995 XXXX, 1104 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electronics Materials Congresses Semiconductors Congresses Solid state electronics Congresses Superconductors Congresses Werkstoff (DE-588)4065579-9 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1995 Osaka gnd-content Halbleiterbauelement (DE-588)4113826-0 s Werkstoff (DE-588)4065579-9 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009015559&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Extended abstracts of the 1995 International Conference on Solid State Devices and Materials August 21 - 24, 1995, Osaka Electronics Materials Congresses Semiconductors Congresses Solid state electronics Congresses Superconductors Congresses Werkstoff (DE-588)4065579-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| subject_GND | (DE-588)4065579-9 (DE-588)4113826-0 (DE-588)1071861417 |
| title | Extended abstracts of the 1995 International Conference on Solid State Devices and Materials August 21 - 24, 1995, Osaka |
| title_auth | Extended abstracts of the 1995 International Conference on Solid State Devices and Materials August 21 - 24, 1995, Osaka |
| title_exact_search | Extended abstracts of the 1995 International Conference on Solid State Devices and Materials August 21 - 24, 1995, Osaka |
| title_full | Extended abstracts of the 1995 International Conference on Solid State Devices and Materials August 21 - 24, 1995, Osaka |
| title_fullStr | Extended abstracts of the 1995 International Conference on Solid State Devices and Materials August 21 - 24, 1995, Osaka |
| title_full_unstemmed | Extended abstracts of the 1995 International Conference on Solid State Devices and Materials August 21 - 24, 1995, Osaka |
| title_short | Extended abstracts of the 1995 International Conference on Solid State Devices and Materials |
| title_sort | extended abstracts of the 1995 international conference on solid state devices and materials august 21 24 1995 osaka |
| title_sub | August 21 - 24, 1995, Osaka |
| topic | Electronics Materials Congresses Semiconductors Congresses Solid state electronics Congresses Superconductors Congresses Werkstoff (DE-588)4065579-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Electronics Materials Congresses Semiconductors Congresses Solid state electronics Congresses Superconductors Congresses Werkstoff Halbleiterbauelement Konferenzschrift 1995 Osaka |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009015559&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT internationalconferenceonsolidstatedevicesandmaterialsosaka extendedabstractsofthe1995internationalconferenceonsolidstatedevicesandmaterialsaugust21241995osaka |