GaAs and related materials: bulk semiconducting and superlattice properties
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| Format: | Buch |
| Sprache: | English |
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Singapore [u.a.]
World Scientific
1999
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| Ausgabe: | 1. publ. 1994, reprint. |
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| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | XIX, 675 S. zahlr. graph. Darst. |
| ISBN: | 9810219253 |
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| 245 | 1 | 0 | |a GaAs and related materials |b bulk semiconducting and superlattice properties |c Sadao Adachi |
| 250 | |a 1. publ. 1994, reprint. | ||
| 264 | 1 | |a Singapore [u.a.] |b World Scientific |c 1999 | |
| 300 | |a XIX, 675 S. |b zahlr. graph. Darst. | ||
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Datensatz im Suchindex
| _version_ | 1804127763151454208 |
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| adam_text | IMAGE 1
GQAS AND
RELATED MATERIALS BULK SEMICONDUCTING AND SUPERLATTICE PROPERTIES
SADAO ADACHI DEPARTMENT OF ELECTRONIC ENGINEERING GUNMA UNIVERSITY
KIRYU-SHI, GUNMA 376, JAPAN
WORLD SCIENTIFIC SINGAPORE * NEW JERSEY * LONDON * HONG KONG
IMAGE 2
CONTENTS
PREFACE VII
ACKNOWLEDGMENTS IX
1 INTRODUCTION 1
REFERENCES, 5
2 BONDING AND STRUCTURAL PROPERTIES 7
2.1 CRYSTAL STRUCTURE AND POLARITY, 7 2.1.1 CRYSTAL STRUCTURE, 7 (A)
NORMAL PHASE, 7 (B) PRESSURE-INDUCED PHASE TRANSITIONS IN BULK GAAS
AND ALAS, 7 (C) PRESSURE-INDUCED PHASE TRANSITIONS IN ALASLGAAS
SUPERLATTICES, 10 2.1.2 CRYSTALLOGRAPHIC POLARITY, 11 2.2 LATTICE
PARAMETER, 12
2.2.1 UNDOPED GAAS, ALAS, AND ALGAAS, 12 (A) GAAS AND ALAS, 12 (B)
ALGAAS ALLOY, 13 2.2.2 DOPED GAAS AND ALGAAS, 15
(A) GAAS, 15 (B) ALGAAS ALLOY, 16
2.3 MOLECULAR AND CRYSTAL DENSITIES, 17 2.3.1 MOLECULAR DENSITY, 17
2.3.2 CRYSTAL DENSITY, 18 2.4 BONDING AND CLEAVAGE PROPERTIES, 18
2.4.1 HYBRIDIZED ORBITALS, 18 2.4.2 CLEAVAGE PROPERTIES, 19 2.5 ORDERED
ALGAAS ALLOY, 22 REFERENCES, 24
XI
IMAGE 3
XII CONTENTS
3 THERMAL PROPERTIES 26
3.1 PHASE DIAGRAM, 26 3.1.1 GA-AS AND AL-AS BINARIES, 26 3.1.2 GAAS-ALAS
PSEUDOBINARY SYSTEM, 28 3.2 SPECIFIC HEAT, 29
3.2.1 GAAS AND ALAS, 30 3.2.2 ALGAAS ALLOY, 33 3.3 DEBYE TEMPERATURE, 34
3.3.1 GAAS AND ALAS, 34
3.3.2 ALGAAS ALLOY, 36 3.4 THERMAL EXPANSION COEFFICIENT, 37 3.4.1 GAAS
AND ALAS, 37 3.4.2 ALGAAS ALLOY, 39
3.4.3 ALGAAS/GAAS MULTILAYERS, 40 3.5 THERMAL CONDUCTIVITY, 41 3.5.1
GAAS AND ALAS, 41 (A) TEMPERATURE EFFECTS, 41
(B) IMPURITY DOPING EFFECTS, 42 3.5.2 INGAAS AND ALGAAS ALLOYS, 43 3.5.3
ALAS/GAAS SUPERLATTICES, 46 3.5.4 DEVICE STRUCTURES, 46 REFERENCES, 46
4 ELASTICITY AND ELASTIC WAVES 49
4.1 SECOND-ORDER ELASTIC CONSTANTS, 49 4.1.1 GAAS AND ALAS:
ROOM-TEMPERATURE VALUES, 50 4.1.2 ALGAAS ALLOY: ROOM-TEMPERATURE VALUES,
52 4.1.3 ALAS/GAAS SUPERLATTICES, 55
4.1.4 TEMPERATURE AND PRESSURE EFFECTS, 55 : 4.2 THIRD-ORDER ELASTIC
CONSTANTS, 56
4.3 YOUNG S MODULUS, POISSON S RATIO, AND OTHER MODULI, 57 4.4 SOUND
VELOCITIES, 60 4.4.1 BULK MATERIALS, 60 4.4.2 ALGAAS/GAAS SUPERLATTICES,
63
4.5 SURFACE ACOUSTIC WAVES, 63 4.5.1 BULK MATERIALS, 63 4.5.2
ALGAAS/GAAS HETEROSTRUCTURES, 66
REFERENCES, 67
5 PHONONS AND LATTICE VIBRONIC PROPERTIES 70
5.1 PHONON DISPERSION RELATIONS, 70 5.1.1 BULK MATERIALS, 70 (A) GAAS,
70 (B) ALAS, 73
(C) ALGAAS ALLOY, 74
IMAGE 4
CONTENTS XIII
5.1.2 AL(GA)AS/GAAS(ALAS) SUPERLATTICES, 75 (A) GENERAL FEATURES, 75 (B)
FOLDED ACOUSTIC MODES, 80 (C) OPTICAL PHONONS, 84
(D) ALASLGOAS[011], [012], AND [111] SUPERLATTICES, 89 5.2 PHONON
FREQUENCIES, 91 5.2.1 GAAS AND ALAS, 91 5.2.2 ALGAAS ALLOY: TWO-MODE
BEHAVIOR, 93
5.2.3 TEMPERATURE AND PRESSURE EFFECTS, 95 (A) TEMPERATURE, 95 (B)
PRESSURE, 97 5.3 GRUNEISEN PARAMETERS, 99
5.3.1 MODE GRUNEISEN PARAMETER, 99 (A) GAAS AND ALAS, 99 (B) ALAS/GAAS
SUPERLATTICES, 99 5.3.2 AVERAGED GRUNEISEN PARAMETER, 101 5.4 PHONON
DEFORMATION POTENTIALS, 103
5.4.1 FORMULATION, 103 5.4.2 EXPERIMENTAL RESULTS, 105 REFERENCES, 107
6 COLLECTIVE EFFECTS AND SOME RESPONSE CHARACTERISTICS 112
6.1 STATIC AND HIGH-FREQUENCY DIELECTRIC CONSTANTS, 112 6.1.1 BULK
MATERIALS: ROOM-TEMPERATURE VALUES, 112 (A) GAAS AND ALAS, 114 (B)
ALGAAS ALLOY, 116 6.1.2 TEMPERATURE AND PRESSURE EFFECTS, 116
(A) TEMPERATURE, 116 (B) PRESSURE, 117 6.1.3 AL(GA)AS/GAAS
SUPERLATTICES, 118 V
6.2 PIEZOELECTRICITY, 122 6.2.1 PIEZOELECTRIC CONSTANT, 122 (A)
PIEZOELECTRIC STRESS CONSTANT, 122 (B) PIEZOELECTRIC STRAIN CONSTANT,
123 6.2.2 ELECTROMECHANICAL COUPLING CONSTANT, 124
6.2.3 AL(GA)AS/GAAS SUPERLATTICES, 124 (A) ELASTIC STRAINS AND
PIEZOELECTRIC TENSOR ELEMENTS, 124 (B) STRAIN-INDUCED POLARIZATION
FIELDS, 126 6.3 FROHLICH COUPLING CONSTANT, 129
6.3.1 BULK MATERIALS, 129 6.3.2 AL(GA)AS/GAAS MULTILAYERS, 132
REFERENCES, 132
7 ENERGY-BAND STRUCTURE: ENERGY-BAND GAPS OF BULK MATERIALS 135 7.1
GENERAL REMARKS, 135 7.1.1 ENERGY-BAND STRUCTURE AND DENSITY OF STATES,
135
IMAGE 5
XIV CONTENTS
7.1.2 BOWING PARAMETER, 142 7.2 ENERGY-BAND GAPS, 144 7.2.1 E,, AND
EO+A,, GAPS, 144 7.2.2 INDIRECT GAPS, 148
7.2.3 E[ AND E,+A, GAPS, 154 7.2.4 EO AND E 2 REGIONS, 154 7.3
TEMPERATURE, PRESSURE, AND DOPING EFFECTS, 157 7.3.1 TEMPERATURE, 157
7.3.2 PRESSURE, 164 7.3.3 DOPING, 170 REFERENCES, 174
8 ENERGY-BAND STRUCTURE: BAND LINEUPS AND HETEROJ UNCTION ENERGY-BAND
DIAGRAMS 179
8.1 BAND LINEUPS, 179 8.2 CONDUCTION- AND VALENCE-BAND OFFSETS, 180
8.2.1 AN OVERVIEW, 180 (A) ELECTRON AFFINITY RULE, 181
(B) TRANSITION-METAL LEVEL APPROACH, 183 8.2.2 MEASUREMENT TECHNIQUES
AND GAAS-ALGAAS VALUES, 184 (A) OPTICAL TECHNIQUES, 184
(B) ELECTRICAL TECHNIQUES, 186 8.2.3 CONCLUDING REMARKS, 188 8.3 SUBBAND
ENERGY LEVELS AND DENSITY OF STATES, 191 8.3.1 QUANTUM WELLS AND
SUPERLATTICES, 191
8.3.2 TRIANGULAR WELLS, 196 8.4 OPTICAL TRANSITION ENERGIES IN
AL(GA)AS/GAAS QUANTUM STRUCTURES, 200 8.4.1 LOWEST-GAP REGION, 200
(A) WIDER-WELL SAMPLES, 200 (B) NARROW QUANTUM WELLS AND SHORT-PERIOD
SUPERLATTICES, 203 8.4.2 HIGHER-LYING-GAP REGIONS, 208 (A) E O +A,,
REGION, 208
(B) E, AND E,+L, REGIONS, 211 (C) E 2 REGION, 215 8.4.3 ORIENTATION
EFFECTS, 216 8.5 EXTERNAL PERTURBATION EFFECTS, 217 8.5.1 TEMPERATURE,
217 8.5.2 HYDROSTATIC PRESSURE, 219 8.5.3 UNIAXIAL STRESS, 222 8.5.4
ELECTRIC FIELD, 222 8.5.5 DOPING, 225 REFERENCES, 225
9 ENERGY-BAND STRUCTURE: ELECTRON AND HOLE EFFECTIVE MASSES 231
9.1 ELECTRON EFFECTIVE MASS, 231
IMAGE 6
CONTENTS XV
9.1.1 T-BAND MINIMUM, 232 (A) GAAS AND ALAS, 232 (B) ALGAAS ALLOY, 235
(C) POLARON EFFECT, 238 9.1.2 X- AND L-BAND MINIMA, 238 9.1.3
TEMPERATURE, PRESSURE, AND CARRIER-CONCENTRATION EFFECTS, 240
(A) TEMPERATURE, 240 (B) PRESSURE, 241 (C) CARRIER-CONCENTRATION EFFECT:
NONPARABOLICITY AND ANISOTROPY, 243 9.1.4 ALGAAS/GAAS HETEROSTRUCTURES,
246
(A) LOW-DIMENSIONAL EFFECTS, 246 (B) TEMPERATURE AND PRESSURE EFFECTS,
250 9.2 HOLE EFFECTIVE MASS, 251 9.2.1 HEAVY- AND LIGHT-HOLE EFFECTIVE
MASS, 251
(A) GAAS AND ALAS, 251 (B) ALGAAS ALLOY, 255 (C) POLARON EFFECT, 257
9.2.2 SPIN-ORBID-SPLITOFF HOLE EFFECTIVE MASS, 257 9.2.3 TEMPERATURE,
PRESSURE, AND CARRIER-CONCENTRATION EFFECTS, 257
(A) TEMPERATURE, 257 (B) PRESSURE, 259 (C) CARRIER-CONCENTRATION EFFECT:
NONPARABOLICITY, 260 9.2.4 ALGAAS/GAAS HETEROSTRUCTURES, 261
(A) IN-PLANE AND PERPENDICULAR MASSES, 261 (B) HOLE DISPERSION CURVES,
263 REFERENCES, 265
10 OTHER MAJOR PROPERTIES RELATED TO THE ENERGY-BAND STRUCTURE 271 10.1
INTRAVALLEY DEFORMATION POTENTIALS: T POINT, 271 10.1.1 ELECTRONS, 271
10.1.2 HOLES, 274
(A) A, B, AND D, 274 (B) OPTICAL-PHONON DEFORMATION POTENTIAL D, 283 (C)
ACOUSTIC-MODE DEFORMATION POTENTIALS, 287 10.2 INTRAVALLEY DEFORMATION
POTENTIALS: L AND X POINTS, 288 10.2.1 L POINT, 288 (A) ELECTRONS, 288
(B) HOLES, 291 (C) E, AND E,+A, TRANSITIONS, 293 10.2.2 X POINT, 294 (A)
ELECTRONS, 294
(B) E 2 TRANSITIONS, 297
10.3 INTERVALLEY DEFORMATION POTENTIALS FOR ELECTRONS, 298 10.3.1
THEORETICAL RESULTS, 298
IMAGE 7
XVI CONTENTS
10.3.2 EXPERIMENTAL RESULTS, 300 (A) GAAS, 300 (B) ALGAAS ALLOY, 303
10.4 SCHOTTKY-BARRIER HEIGHT, 305
10.4.1 GAAS, 305 10.4.2 ALAS AND ALGAAS ALLOY, 312 10.5
IMPACT-IONIZATION COEFFICIENT, 314 10.5.1 BULK MATERIALS, 314
(A) GAAS, 314 (B) ALGAAS ALLOY, 322 10.5.2 ALGAAS/GAAS HETEROSTRUCTURES,
325 REFERENCES, 328
11 OPTICAL PROPERTIES: BULK GAAS AND RELATED MATERIALS 336
11.1 OPTICAL DISPERSION RELATIONS, 336 11.2 THE RESTSTRAHLEN REGION, 337
11.2.1 GAAS AND ALAS, 337 11.2.2 ALGAAS ALLOY, 345
11.3 THE INTERBAND TRANSITION REGION, 351 11.3.1 THEORETICAL MODEL, 351
(A) HARMONIC OSCILLATOR APPROXIMATION, 351 (B) STANDARD CRITICAL-POINT
MODEL, 353
(C) MODEL DIELECTRIC FUNCTION, 356 1. E O AND E 0 +AG TRANSITIONS, 357
2. E, AND E,+A, TRANSITIONS, 361 3. EG AND E 2 TRANSITIONS, 364 4.
INDIRECT-BAND-GAP TRANSITIONS, 364 11.3.2 EXPERIMENTAL RESULTS:
ROOM-TEMPERATURE VALUES, 366
(A) GAAS AND ALAS, 366 1. T, AND 3, 366 2. N, K, A, AND R, 370
(B) ALGAAS ALLOY, 372 1. , AND EJ, 372 2. N, K, A, AND R, 382
11.3.3 TEMPERATURE, PRESSURE, AND RADIATION-DAMAGE EFFECTS, 388 (A)
TEMPERATURE AND PRESSURE, 388 (B) RADIATION DAMAGE: PARTIALLY AMORPHIZED
GAAS, 400 11.4 NEAR OR BELOW THE FUNDAMENTAL ABSORPTION EDGE, 407
11.4.1 OPTICAL ABSORPTION, 407 (A) THEORETICAL CONSIDERATION, 407 1.
OPTICAL TRANSITIONS AND THEIR SELECTION RULES, 407 2. EXCITON
INTERACTIONS, 409 (B) EXPERIMENTAL RESULTS, 411
1. OPTICAL ABSORPTION SPECTRA, 411 2. EXCITON PARAMETER, 419
IMAGE 8
CONTENTS XVU
11.4.2 REFRACTIVE INDEX, 423 (A) THEORETICAL MODEL, 423 1. SELLMEIER
EQUATION, 423 2. SINGLE-OSCILLATOR MODEL, 423
3. MODIFIED SINGLE-OSCILLATOR MODEL, 424 4. EXPONENTIAL BAND-EDGE MODEL,
424 5. SIMPLIFIED INTERBAND-TRANSITION MODEL, 425 6.
QUANTUM-DENSITY-MATRIX FORMULATION, 426 (B) EXPERIMENTAL RESULTS, 426
1. GAAS AND ALAS: ROOM-TEMPERATURE VALUES, 426 2. GAAS AND ALAS:
TEMPERATURE, PRESSURE, AND DOPING EFFECTS, 429 3. ALGAAS ALLOY, 434
11.4.3 INDIRECT STIMULATED EMISSION IN ALGAAS ALLOY, 437 11.5
FREE-CARRIER INFRARED ABSORPTION AND RELATED PHENOMENA, 439
11.5.1 FREE-CARRIER AND INTERBAND ABSORPTION, 439 (A) N-GAAS, 439 (B)
P-GAAS, 441
11.5.2 CARRIER-INDUCED CHANGE IN REFRACTIVE INDEX, 445 REFERENCES, 448
12 OPTICAL PROPERTIES: QUANTUM WELLS AND SUPERLATTICES 453
12.1 THE RESTSTRAHLEN REGION, 453 12.2 THE INTERBAND TRANSITION REGION,
458 12.2.1 (OOL)-ORIENTED SUPERLATTICES AND QUANTUM WELLS, 458 12.2.2
(LLO)-ORIENTED SUPERLATTICES AND QUANTUM WELLS, 461
12.3 NEAR OR BELOW THE FUNDAMENTAL ABSORPTION EDGE, 463 12.3.1 SYMMETRY
AND OPTICAL-TRANSITION SELECTION RULES, 463 12.3.2 EXCITONS AND OPTICAL
ABSORPTION, 466 (A) INTERBAND ABSORPTION, 466
(B) EXCITON PARAMETERS, 472 (C) INTERSUBBAND ABSORPTION, 476 12.3.3
REFRACTIVE INDEX, 482 (A) THEORETICAL RESULTS, 482
(B) EXPERIMENTAL RESULTS, 486 REFERENCES, 489
13 ELASTOOPTIC AND ELECTROOPTIC EFFECTS 495
13.1 ELASTOOPTIC EFFECT, 495 13.1.1 THEORETICAL MODEL, 495 13.1.2
EXPERIMENTAL RESULTS, 498 (A) BULK MATERIALS, 498
1. GAAS AND ALAS, 498 2. ALGAAS ALLOY, 504 (B) ALASLGAAS SUPERLATTICES,
507 13.2 LINEAR AND QUADRATIC ELECTROOPTIC EFFECTS, 507
IMAGE 9
XVIII CONTENTS
13.2.1 THEORETICAL MODEL, 507 13.2.2 EXPERIMENTAL RESULTS, 513 (A) BULK
MATERIALS, 513 1. LINEAR ELECTROOPTIC CONSTANT, 513
2. QUADRATIC ELECTROOPTIC CONSTANT, 517 (B) MULTIPLE QUANTUM WELLS AND
SUPERLATTICES, 518 1. LINEAR ELECTROOPTIC CONSTANT, 518
2. QUADRATIC ELECTROOPTIC CONSTANT, 520 13.3 FRANZ-KELDYSH AND STARK
EFFECTS, 521 13.3.1 BULK MATERIALS, 521 (A) FRANZ-KELDYSH EFFECT, 521
(B) STARK EFFECT, 526 13.3.2 ALGAAS/GAAS QUANTUM-WELL STRUCTURES, 529
(A) QUANTUM-CONFINED STARK EFFECT, 529 (B) WANNIER-STARK LOCALIZATION
AND LADDER, 533 REFERENCES, 540
14 CARRIER TRANSPORT PROPERTIES: BULK GAAS AND RELATED MATERIALS 546
14.1 LOW-FIELD MOBILITY, 546 14.1.1 ELECTRONS, 546 (A) GAAS AND ALAS,
546
(B) ALGAAS ALLOY, 556 1. ALLOY SCATTERING POTENTIAL, 556 2. THREE-VALLEY
MODEL, 558 3. EXPERIMENTAL AND THEORETICAL RESULTS, 560 14.1.2 HOLES,
566
(A) GAAS AND ALAS, 566 (B) ALGAAS ALLOY, 575
14.2 HIGH-FIELD TRANSPORT, 579 14.2.1 VELOCITY-FIELD CHARACTERISTICS,
579 (A) ELECTRONS, 579 (B) HOLES, 595
14.2.2 GUNN EFFECT, 599 14.3 MINORITY-CARRIER TRANSPORT, 600 14.3.1
ELECTRONS IN P-TYPE MATERIALS, 600 (A) MOBILITY, 600
(B) DRIFT VELOCITY, 603 14.3.2 HOLES IN N-TYPE MATERIALS, 605 14.4
SUPERCONDUCTIVITY, 607 14.4.1 METALLIC PROPERTIES AT HIGH PRESSURES, 607
14.4.2 AS-RICH AND IN-DIFFUSED GAAS SAMPLES, 608 REFERENCES, 608
15 CARRIER TRANSPORT PROPERTIES: ALGAAS/GAAS HETEROSTRUCTURES 616 15.1
LOW-FIELD MOBILITY, 616
IMAGE 10
CONTENTS XIX
15.1.1 ELECTRONS, 616 (A) QUASI-TRIANGULAR WELLS, 616 (B) SQUARE WELLS,
626 15.1.2 HOLES, 631
(A) QUASI-TRIANGULAR WELLS, 631 (B) SQUARE WELLS, 637 15.2 HOT-CARRIER
TRANSPORT, 638 15.2.1 PARALLEL TRANSPORT, 638
(A) QUASI-TRIANGULAR WELLS, 638 (B) SQUARE WELLS, 646 (C) MINORITY
CARRIERS, 648 15.2.2 PERPENDICULAR TRANSPORT, 651
(A) HOT ELECTRONS AND TUNNELING, 651 (B) MINIBAND BLOCK CONDUCTION, 654
15.3 REAL-SPACE TRANSFER, 656 REFERENCES, 658
INDEX TO TABLES OF PHYSICAL CONSTANTS AND PROPERTIES 663
SUBJECT INDEX 667
|
| any_adam_object | 1 |
| author | Adachi, Sadao |
| author_facet | Adachi, Sadao |
| author_role | aut |
| author_sort | Adachi, Sadao |
| author_variant | s a sa |
| building | Verbundindex |
| bvnumber | BV013066518 |
| classification_rvk | UP 3150 |
| ctrlnum | (OCoLC)247508934 (DE-599)BVBBV013066518 |
| discipline | Physik |
| edition | 1. publ. 1994, reprint. |
| format | Book |
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| id | DE-604.BV013066518 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:38:31Z |
| institution | BVB |
| isbn | 9810219253 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008901565 |
| oclc_num | 247508934 |
| open_access_boolean | |
| owner | DE-703 DE-355 DE-BY-UBR DE-20 |
| owner_facet | DE-703 DE-355 DE-BY-UBR DE-20 |
| physical | XIX, 675 S. zahlr. graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | World Scientific |
| record_format | marc |
| spelling | Adachi, Sadao Verfasser aut GaAs and related materials bulk semiconducting and superlattice properties Sadao Adachi 1. publ. 1994, reprint. Singapore [u.a.] World Scientific 1999 XIX, 675 S. zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Galliumarsenid - Halbleiteroberfläche - Schichtgitter - Bandstruktur Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Bandstruktur (DE-588)4143994-6 gnd rswk-swf Schichtgitter (DE-588)4124130-7 gnd rswk-swf Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 s Heterostruktur (DE-588)4123378-5 s DE-604 Halbleiteroberfläche (DE-588)4137418-6 s Schichtgitter (DE-588)4124130-7 s Bandstruktur (DE-588)4143994-6 s 1\p DE-604 http://www.gbv.de/dms/bs/toc/305092146.pdf Inhaltsverzeichnis GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008901565&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Adachi, Sadao GaAs and related materials bulk semiconducting and superlattice properties Galliumarsenid - Halbleiteroberfläche - Schichtgitter - Bandstruktur Galliumarsenid (DE-588)4019155-2 gnd Heterostruktur (DE-588)4123378-5 gnd Bandstruktur (DE-588)4143994-6 gnd Schichtgitter (DE-588)4124130-7 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd |
| subject_GND | (DE-588)4019155-2 (DE-588)4123378-5 (DE-588)4143994-6 (DE-588)4124130-7 (DE-588)4137418-6 |
| title | GaAs and related materials bulk semiconducting and superlattice properties |
| title_auth | GaAs and related materials bulk semiconducting and superlattice properties |
| title_exact_search | GaAs and related materials bulk semiconducting and superlattice properties |
| title_full | GaAs and related materials bulk semiconducting and superlattice properties Sadao Adachi |
| title_fullStr | GaAs and related materials bulk semiconducting and superlattice properties Sadao Adachi |
| title_full_unstemmed | GaAs and related materials bulk semiconducting and superlattice properties Sadao Adachi |
| title_short | GaAs and related materials |
| title_sort | gaas and related materials bulk semiconducting and superlattice properties |
| title_sub | bulk semiconducting and superlattice properties |
| topic | Galliumarsenid - Halbleiteroberfläche - Schichtgitter - Bandstruktur Galliumarsenid (DE-588)4019155-2 gnd Heterostruktur (DE-588)4123378-5 gnd Bandstruktur (DE-588)4143994-6 gnd Schichtgitter (DE-588)4124130-7 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd |
| topic_facet | Galliumarsenid - Halbleiteroberfläche - Schichtgitter - Bandstruktur Galliumarsenid Heterostruktur Bandstruktur Schichtgitter Halbleiteroberfläche |
| url | http://www.gbv.de/dms/bs/toc/305092146.pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008901565&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT adachisadao gaasandrelatedmaterialsbulksemiconductingandsuperlatticeproperties |
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Inhaltsverzeichnis