Wide bandgap semiconductors for high power, high frequency and high temperature applications - 1999: symposium held April 5 - 8, 1999, San Francisco, California, U.S.A.
Saved in:
| Other Authors: | |
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| Format: | Book |
| Language: | English |
| Published: |
Warrendale, Pa.
Materials Research Soc.
1999
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| Series: | Materials Research Society: Materials Research Society symposia proceedings
572 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XIII, 559 S. Ill., graph. Darst. |
| ISBN: | 1558994793 |
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| 245 | 1 | 0 | |a Wide bandgap semiconductors for high power, high frequency and high temperature applications - 1999 |b symposium held April 5 - 8, 1999, San Francisco, California, U.S.A. |c ed.: Steven C. Binari ... |
| 246 | 1 | 3 | |a Wide-bandgap semiconductors for high-power, high-frequency and high-temperature applications - 1999 |
| 264 | 1 | |a Warrendale, Pa. |b Materials Research Soc. |c 1999 | |
| 300 | |a XIII, 559 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 650 | 4 | |a Gallium nitride |v Congresses | |
| 650 | 4 | |a Silicon carbide |v Congresses | |
| 650 | 4 | |a Wide gap semiconductors |v Congresses | |
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| _version_ | 1804127587624026112 |
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| adam_text | MATERIALS RESEARCH SOCKTY SYMPOSKJM PROCEEDITCGS VOLUME 572 WIDE-BANDGAP
SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE
APPLICATIONS*1999 SYMPOSIUM HELD APRIL 5-8,1999,SAN FRANCISCO,
CALIFORNIA, U.S.A. EDITORS: STEVEN C. BINARI NAVAL RESEARCH LABORATORY
WASHINGTON, D.C., U.S.A. ALBERT A. BURK CREE RESEARCH INC. DURHAM, NORTH
CAROLINA, U.S.A. MICHAEL R. MELLOCH PURDUE UNIVERSITY WEST LAFAYETTE,
INDIANA, U.S.A. CHANH NGUYEN HRL LABORATORIES MALIBU, CALIFORNIA, U.S.A.
IMLRLSL MATERIALS RESEARCH SOCIETY WARRENDALE, PENNSYLVANIA CONTENTS
PREFACE XIII MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS XIV PART
I: SIC DEVICES AND PROCESSING *SIC POWER ELECTRONIC DEVICES, MOSFETS AND
RECTIFIERS 3 JA. COOPER, S-H. RYU, Y. LI, M. MATIN, J. SPITZ, D.T.
MORISETTE, N.M. MCOLOTHLIN, M.K. DAS, M.R. MELLOCH, NA. CAPANO, ANDJ.M.
WOODALL *RECENT PROGRESS IN SIC MICROWAVE MESFETS 15 S.T. ALLEN, S.T.
SHEPPARD, W.L. PRIBBLE, RA. SADLER, T.S. ALCORN, Z. RING, AND J.W.
PALMOUR CURRENT STATUS OF SIC POWER SWIFCHING DEVICES: DIODES AND GTOS
23 S. SESHADRI, A.K. AGARWAL W.B. HALL, S.S. MANI, N.F. MACMILLAN, R.
RODRIGUES, T. MANSON, S. KHATRI, AND PA. SANGER THE EFFECTS OF DAMAGE ON
HYDROGEN-IMPLANT-INDUCED THIN-FILM SEPARATION FROM BULK SILICON CARBIDE
33 R.B. GREGORY, O.W. HOLLAND, D.K. THOMAS, TA. WETTEROTH, AND S.R.
WILSON CHARACTERIZATION OF SI0 2 /SIC SAMPLES USING PHOTOELECTRON
SPECTROSCOPY 39 LI. JOHANSSON, P-A. QLANS, Q. WAHAB, T.M. OREHK, TH.
EICKHOFF, AND W. DRUBE ANNEALING OF ION IMPLANTATION DAMAGE IN SIC USING
A GRAPHITE MASK 45 C. THOMAS, C. TAYLOR, J. ORIFFIN, W.L. ROSE, M.G.
SPENCER, M. CAPANO, S. RENDAKOVA, AND K. KORNEGAY EFFECT OF VARYING
OXIDATION PARAMETERS ON THE GENERATION OF C-DANGLING BOND CENTERS IN
OXIDIZED SIC 51 PJ. MACFARLANE AND M.E. ZVANUT THICK OXIDE LAYERS ON N
AND P SIC WAFERS BY A DEPO-CONVERSION TECHNIQUE 57 Q. ZHANG, V.
MADANGARLI, I. KHLEBNIKOV, S. SOLOUIEV, AND T.S. SUDARSHAN
BIAS-TEMPERATURE-STRESS INDUCED MOBILITY IMPROVEMENT IN 4H-SIC MOSFETS
63 K. CHATTY, T.P. CHOW, RJ. OUTMANN, E. ARNOLD, AND D. ALOK *LNVITED
PAPER V FUELL BAND MONTE CARLO SIMULATION OF SHORT CHANNEL MOSFETS IN 4H
AND 6H-SIC 69 M. MJELM, TI-E. RIILSSON, E. DUBARIC, C. PERSSON, P.
KAECKELL, AND CS. PETERSSON HIGH VOLTAGE SCHOTTKY BARRIER DIODES ON
P-TYPE SIC USING METAL-OVERLAP ON A THICK OXIDE LAYER AS EDGE
TERMINATION 75 Q. ZHANG, V. MADANGARLI, S. SOLOVIEU, AND T.S. SUDARSHAN
HIGH VOLTAGE P-N JUNCTION DIODES IN SILICON CARBIDE USING FIELD PLATE
EDGE TERMINATION 81 R.K. CHILUKWI, P. ANANTHANARAYANAN, V. NAGAPUDI, AND
B.J. BALIGA CARBON AND SILICON RELATED SURFACE COMPOUNDS OF PALLADIUM
ULTRATHIN FILMS ON SIC AFTER DIFFERENT ANNEALING TEMPERATURES 87 WJ. HU,
D.T. SHI, T. CRENSHAW, A. BURGER, AND W.E. COLLINS A MATERIALS
INVESTIGATION OF NICKEL BASED CONTACTS TO N-SIC SUBJECTED TO OPERATIONAL
THERMAL STRESSES CHARACTERISTIC OF HIGH POWER SWITCHING 93 M.W. COLE,
C.W. HUBBARD, CG. FOUNTZOULAS, DJ. DEMAREE, AND E. REN PREPARATION OF
CONDUCTIVE TUNGSTEN CARBIDE LAYERS FOR SIC HIGH-TEMPERATURE APPLICATIONS
99 H. ROMANUS, V. CIMALLA, S.I. AHMED, JA. SCHAEFER, G. ECKE, R. AVCI,
AND L. SPIESS A FORMATION OF SI02/4H-SIC INTERFACE BY OXIDIZING
DEPOSITED POLY-SI AND HIGH-TEMPERATURE HYDROGEN ANNEALING 105 H. FUKUDA,
K. SAKAMOTO, K. HAGAL, T. SEKIGAWA, S. YOSHIDA, AND K. ARAI
HIGH-TEMPERATURE STABLE WSI2-CONTACFS ON P-6H-SILICON CARBIDE 111 F.
ERLER, H. ROMANUS, J.K.N. LINDNER, AND L. SPIESS STRUCTURAL AND
ELECTRICAL PROPERTIES OF BERYLLIUM IMPLANTED SILICON CARBIDE 117 T.
HENKEL, Y. TANAKA, N. KOBAYASHI, TT. TANOUE, M. GONG, X.D. CHEN, S.
FUNG, AND CD. BELING ELEVATED TEMPERATURE SILICON CARBIDE CHEMICAL
SENSORS 123 MA. GEORGE, MA. AYOUB, D. IIA, AND DJ. LARKIN THE EFFECT OF
ANNEALING ON ARGON IMPLANTED EDGE TERMINATIONS FOR 4H-SIC SCHOTTKY
DIODES 129 A.P. KNIGHTS, DJ. MORRISON, N.G. WRIGHT, CM. JOHNSON, A.G.
O NEILL, S. ORTOLLAND, K.P. HOMEWOOD, MA. LOURENCO, R.M. GWILLIAM, AND
P.Q. COLEMAN OXIDATION MODELING FOR SIC 135 N.G. WRIGHT, CM. JOHNSON,
AND A.G. O RIEILL VI ANNEALING EFFECTS OF SCHOTTKY CONTACTS ON THE
CHARACTERISTICS OF 4H-SIC SCHOTTKY BARRIER DIODES 141 S.C. HANG, B.TI.
KUM, SJ. DO, J.TL. JE, AND M.W. SHIN PART II: SIC EPITAXY AND
CHARACTERIZATION *EPITAXIAL GROWTH OF SIC IN A VERTICAL MULTI-WAFER CVD
SYSTEM: ALREADY SUITED AS PRODUCTION PROCESS? 149 R. KUPP, C. HECHT, A.
WIEDENHOFER, AND D. STEPHANI MULTI-WAFER VPE GROWTH OF HIGHLY UNIFORM
SIC EPITAXIAL LAYERS 161 NJ. O LOUGHLIN, TL.D. NORDBY, JR., AND AA.
BURK, JR. CHARACTERIZATION OF THICK 4H-SIC HOT-WALL CVD LAYERS 167 M.J.
PAISLEY, K.G. IRVINE, O. KORDINA, R. SINGH, J.W. PALMOUR, AND C.TI.
CARTER, JR. HOMO-EPITAXIAL AND SELECTIVE AREA GROWTH OF 4H AND 6H
SILICON CARBIDE USING A RESISTIVELY HEATED VERTICAL REACTOR 173 E.
ESHUN, C. TAYLOR, M.O. SPENCER, K. KORNEGAY, I. FERGUSON, A. QURRAY, AND
R. STALL PROPERTIES OF 4H-SIC BY SUBLIMATION CLOSE SPACE TECHNIQUE 179
S. MISHINO, K. MATSUMOTO, Y. CHEN, AND Y. LIISHIO EFFECT OF GE ON SIC
FILM MORPHOLOGY IN SIC/SI FILMS GROWN BY MOCVD 185 W.L. SARNEY, L.
SALAMANCA-RIBA, P. ZHOU, M.O. SPENCER, C. TAYLOR, R.P. SHARMA, AND KA.
JONES PROPERTIES OF HETEROEPITAXIAL 3C-SIC LAYER ON SI USING SI 2 (CH 3
) 6 BY CVD 191 Y. CHEN, Y. MASUDA, Y. TIISHIO, K. MATSUMOTO, AND S.
TIISHINO CHARACTERIZATION OF P-TYPE BUFFER LAYERS FOR SIC MICROWAVE
DEVICE APPLICATIONS 197 A.O. LIONSTANTINOV, S. KARLSSON, P-AE. NILSSON,
A-M. SAROUKHAN, J-O. SVEDBERG, TI. NORDELL, C.I. HARRIS, J. ERIKSSON,
AND N. RORSMAN OPTICAL CHARACTERIZATION OF SIC WAFERS 201 J.C. BURTON,
M. POPHRISTIC, F.H. LONG, AND I. FERGUSON GROWTH OF SIC THIN FILMS ON
(100) AND (111) SILICON BY PULSED LASER DEPOSITION COMBINED WITH A
VACUUM ANNEALING PROCESS 207 J. HUANG, L. WANG, J. WEN, Y. WANG, C. HIN,
C-M. ZETTERLING, AND M. OESTLING ON THE ROLE OF FOREIGN ATOMS IN THE
OPTIMIZATION OF 3C-SIC/SI HEFEROINTERFACES 213 P. MASRI, N. MOREAUD, M.
AVEROUS, TH. STAUDEN, T. WOEHNER, AND J. PEZOLDT INVITED PAPER VII 3C-SIC
BUFFER LAYERS CONVERTED FROM SI AT A LOW TEMPERATURE 219 U.M. LIAW, S.Q.
TIONG, P. FEJES, D. WERHO, H. TOMPKINS, S. ZOELLNER, S.R. WILSON, K.J.
LINTHICUM, AND R.F. DAVIS TIME RESOIVED PHOTOIUMINESCENCE OF CUBIC MG
DOPED GAN 225 R. SEITE, C. OASPAR, T. MONTEIRO, E. PEREIRA, B.
SCHOETTKER, T. FREY, DJ. AS, D. SCHIKORA, AND K. LISCHKA DIELECTRIC
FUNCTION OF AIN GROWN ON SI (111) BY MBE 231 S. ZOLLNER, A. KONKAR, R.B.
GREGORY, S.R. WILSON, SA. NIKISHIN, AND FI. TEMKIN THE COMPARATIVE
STUDIES OF CHEMICAL VAPOR DEPOSITION GROWN EPITAXIAL LAYERS AND OF
SUBLIMATION SANDWICH METHOD GROWN 4H-SIC SAMPLES 237 A.O. EVWARAYE, S.R.
SMITH, AND W.C. MITCHEL PART III: SIC BULK GROWTH AND CHARACTERIZATION
*LMPURITY EFFECTS IN THE GROWTH OF 4H-SIC CRYSTALS BY PHYSICAL VAPOR
TRANSPORT 245 V. BALAKRISHNA, G. AUGUSTINE, AND R.H. HOPKINS
CHARACTERIZATION OF VANADIUM-DOPED 4H-SIC USING OPTICAL ADMITTANCE
SPECTROSCOPY 253 S.R. SMITH, A.O. EVWARAYE, W.C. MITCHEL, J.S. SOLOMON,
ANDJ. GOLDSTEIN ON-LINE MONITORING OF PVT SIC BULK CRYSTAL GROWTH USING
DIGITAL X-RAY IMAGING 259 P.J. WELLMANN, M. BICKERMANN, M. GRAU, D.
TLOFMANN, T.L. STRAUBINGER, AND A. WINNACKER POLYTYPE STABILITY AND
DEFECT REDUCTION IN 4H-SIC CRYSTALS GROWN VIA SUBLIMATION TECHNIQUE 265
R. YAKIMOVA, T. IAKIMOV, M. SYVAEJAERVI, TL. JACOBSSON, P. RAEBACK, A.
VEHANEN, AND E. JANZEN GROWTH AND CHARACTERIZATION OF 2 6H-SILICON
CARBIDE 271 E. SCHMITT, R. ECKSTEIN, AND M. KOELBL EXPERIMENTAL AND
THEORETICAL ANAIYSIS OF THE HALL-MOBILITY IN N-TYPE BUIK 6H- AND 4H-SIC
275 ST.G. MUELLER, D. TLOFMANN, AND A. WINNACKER MID-INFRARED
PHOTOCONDUCTIVITY SPECTRA OF DONOR IMPURITIES IN HEXAGONAL SILICON
CARBIDE 281 R.J. LINVILLE, GJ. BROWN, W.C. MITCHEL, A. SAXLER, AND R.
PERRIN *LNVITED PAPER VIII PART IV: GAN GROWTH AND CHARACTERIZATION THE
INFLUENCE OF THE SAPPHIRE SUBSTRATE ON THE TEMPERATURE DEPENDENCE OF THE
GAN BANDGAP 289 J. KRUEGER, N. SHAPIRO, S. SUBRAMANYA, Y. KIM, H. SIEGLE,
P. PERLIN, E.R. WEBER, W.S. WONG, T. SANDS, N.W. CHEUNG, AND R.J. MOLNAR
EFFECT OF N/GA FLUX RATIO IN GAN BUFFER LAYER GROWTH BY MBE ON (0001)
SAPPHIRE ON DEFECT FORMATION IN THE GAN MAIN LAYER 295 S. RUVIMOV, Z.
LILIENTAL-WEBER, J. WASHBUM, Y. KIM, O.S. SUDHIR, J. KNIEGER, AND E.R.
WEBER ENHANCED OPTICAL EMISSION FROM GAN FILM GROWN ON COMPOSITE
INTERMEDIATE LAYERS 301 X. ZHANG, S-J. CHUA, P. LI, AND K-B. CHONG
PENDEO-EPITAXIAL GROWTH OF GAN ON SIC AND SILICON SUBSTRATES VIA
METALORGANIC CHEMICAL VAPOR DEPOSITION 307 K.J. LINTHICUM, T. QEHRKE, D.
THOMSON, C. RONNING, E.P. CARLSON, CA. ZORMAN, M. MEHREGANY, AND R.F.
DAVIS MASKLESS LATERAL EPITAXIAL OVERGROWTH OF GAN ON SAPPHIRE 315 P.
FINI, H. MARCHAND, J.P. IBBETSON, B. MORAN, L. ZHAO, S.P. DENBAARS, J.S.
SPECK, AND U.K. NISHRA REPRODUCIBILITY AND UNIFORMITY OF MOVPE PLANETARY
REACTORS FOR THE GROWTH OF GAN BASED MATERIALS 321 M. HEUKEN, TI.
PROTZMANN, O. SCHOEN, M. LUENENBUERGER, H. JUERGENSEN, M. BREMSER, AND
E. WOELK SYNCHROTRON X-RAY TOPOGRAPHY STUDIES OF EPITAXIAL LATERAL
OVERGROWTH OF GAN ON SAPPHIRE 327 PJ. MCNALLY, T. TUOMI, R. RANTAMAEKI,
K. JACOBS, L. CONSIDINE, M. O HARE, D. LOWNEY, AND A.N. DANILEWSKY
CONDUCTING (SI-DOPED) ALUMINUM NITRIDE EPITAXIAL FILMS GROWN BY
MOLECULAR BEAM EPITAXY 333 J.Q. KIM, M. MOORTHY, AND R.M. PARK
INVESTIGATION OF THE MORPHOLOGY OF AIN FILMS GROWN ON SAPPHIRE BY MOCVD
USING TRANSMISSION ELECTRON MICROSCOPY 339 W.L. SARNEY, L.
SALAMANCA-RIBA, P. ZHOU, S. WILSON, M.O. SPENCER, AND KA. JONES
TEMPERATURE DEPENDENT MORPHOLOGY TRANSITION OF GAN FILMS 345 A.RA.
ZAUNER, F.K. DE THEIJE, P.R. HAGEMAN, WJ.P. VAN ENCKEVORT, JJ SCHERMER,
AND P.K. LARSEN COMPARATIVE STUDY OF EMISSION FROM HIGHLY EXCITED (IN,
AI) GAN THIN FILMS AND HETEROSTRUCTURES 351 B.D. LITTLE, S. BIDNYK, TJ.
SCHMIDT, J.B. LAM, Y.H. KWON, JJ. SONG, S. KELLER, U.K. MISHRA, S.P.
DENBAARS, AND W. YANG IX ATOMIC SCALE ANALYSIS OF INGAN MULTI-QUANTUM
WELLS 357 M. BENAMARA, Z. LILIENTAL-WEBER, W. SWIDER, J. WASHBUM, R.D.
DUPUIS, PA. QRUDOWSKI, CJ. EITING, J.W. YANG, AND MA. KHAN TEM STUDY OF
MG-DOPED BULK GAN CRYSTALS 363 Z. LILIENTAL-WEBER, M. BENAMARA, S.
RUVIMOV, J.H. MAZUR, J. WASHBURN, I. ORZEGORY, AND S. POROWSKI
DEFORMATION-INDUCED DISLOCATIONS IN 4H-SIC AND GAN 369 M.H. HONG, A.V.
SAMANT, V. ORLOV, B. FARBER, C KISIELOWSKI, AND P. PIROUZ CA DOPANT SITE
WITHIN ION IMPLANTED GAN LATTICE 377 H. KOBAYASHI AND W.M. QIBSON GROWTH
AND CHARACTERIZATION OF INGAN/GAN HETEROSTRUCTURES USING PLASMA-ASSISTED
MOLECULAR BEAM EPITAXY 383 K.H. SHIM, S.E. HONG, K.H. KIM, M.C PAEK, AND
K.I. CHO PIEZOELECTRIC COEFFICIENTS OF ALUMINUM NITRIDE AND GALLIUM
NITRIDE 389 CM. LUENG, H.L.W. CHAN, W.K. FONG, C. SURYA, AND CL. CHOY
FAST AND SLOW UV-PHOTORESPONSE IN N-TYPE GAN 395 R. ROCHA, S. KOYNOV, P.
BROGUEIRA, R. SCHWARZ, V. CHU, M. TOPF, D. MEISTER, AND B.LI. MEYER
EPITAXIAL GROWTH OF GAN THIN FILMS USING A HYBRID PULSED LASER
DEPOSITION SYSTEM 401 P. MEREL, M. CHAKER, H. PEPIN, AND M. TABBAL
EPITAXIAL GROWTH OF AIN ON SI SUBSTRATES WITH INTERMEDIATE 3C-SIC AS
BUFFER LAYERS 407 S.Q. HONG, H.M. LIAW, K. LINTHICUM, R.F. DAVIS, P.
FEJES, S. ZOLLNER, M. KOTTKE, AND S.R. WILSON SIMS AND CL
CHARACTERIZATION OF MANGANESE-DOPED ALUMINUM NITRIDE FILMS 413 R.C.
TUCCERI, CD. BLAND, M.L. CALDWELL, M.H. ERVIN, M.P. MAGTOTO, CM.
SPALDING, MA. WOOD, AND H.H. RICHARDSON PHOTOLUMINESCENCE BETWEEN 3.36
EV AND 3.41 EV FROM GAN EPITAXIAL LAYERS 419 R. SEITZ, C QASPAR, T.
MONTEIRO, E. PEREIRA, MA. POISSON, AND B. BEAUMONT DISORDER INDUCED IR
ANOMALY IN HEXAGONAL ALGAN SHORT-PERIOD SUPERLATTICES AND ALLOYS 427
A.M. MINTAIROV, A.S. VLASOV, J.L. MERZ, D. KORAKAKIS, T.D. MOUSTAKAS,
A.O. OSINSKY, R. GASKA, AND M.B. SMIRNOV NONDEGENERATE OPTICAL
PUMP-PROBE SPECTROSCOPY OF HIGHLY EXCITED GROUP IM NITRIDES 433 TJ.
SCHMIDT, J.J. SONG, S. KELLER, U.K. MISHRA, S.P. DENBAARS, AND W. YANG X
STUDY OF NEAR-THRESHOLD GAIN MECHANISMS IN MOCVD-GROWN GAN EPILAYERS AND
INGAN/GAN HETEROSTRUCTURES 439 S. BIDNYK, T.J. SCHMIDT, B.D. LITUEE, AND
JJ. SONG ELECTRON TRANSPORT IN THE LLL-V NITRIDE ALLOYS 445 B.E. FOUTZ,
S.K. O LEARY, M.S. SHUR, AND L.F. EASTMAN HIGH-QUALITY GAN GROWN BY
MOLECULAR BEAM EPITAXY ON GE(OOL) 451 H. SIEGLE, Y. KIM, G.S. SUDHIR, J.
KRUEGER, P. PERLIN, J.W. AGER III, C. KISIELOWSKI, AND E.R. WEBER CARRIER
RECOMBINATION DYNAMICS OF AL X GAI. X N EPILAYERS GROWN BY MOCVD 457
Y-H. CHO, Q.H. QAINER, J.B. HAM, JJ. SONG, W. YANG, AND SA. MCPHERSON
COMPARATIVE STUDY OF GAN GROWTH PROCESS BY MOVPE 463 J. SUN, J.M.
REDWING, AND T.F. KUECH PART V: GAN DEVICES AND PROCESSING *AIGAN
MICROWAVE POWER HFETS ON INSULATING SIC SUBSTRATES 471 O. SULLIVAN, E.
OERTNER, R. PITTMAN, M. CHEN, R. PIERSON, A. TLIGGINS, Q. CHEN, J-W.
YANG, K.P. SMITH, R. PEREZ, A. KHAN, J. REDWING, B. MCDERMOTT, AND K.
BOUTROS RECESSED GATE GAN MESFETS FABRICATED BY THE PHOTOELECTROCHEMICAL
ETCHING PROCESS 481 W.S. LEE, Y.H. CHOL, K.W. CHUNG, M.W. SHIN, AND D.C.
MOON CURRENT-VOLTAGE CHARACTERISTICS OF UNGATED ALGAN/GAN
HETEROSTRUCTURES 489 J.D. ALBRECHT, P.P. RUEDEN, S.C. BINARI, K.
IKOSSI-ANASTASIOU, M.Q. ANCONA, R.L. HENRY, D.D. KOLESKE, AND A.E.
WICKENDEN HYDROSTATIC AND UNIAXIAL STRESS DEPENDENCE AND PHOTO-INDUCED
EFFECTS ON THE CHANNEL CONDUCTANCE OF N-AIGAN/GAN HETEROSTRUCTURES GROWN
ON SAPPHIRE SUBSTRATES 495 A.K. FUNG, C. CAI, P.P. RUEDEN, M.I. NATHAN,
M.Y. CHEN, B.T. MCDERMOTT, OJ. SULLIVAN, J.M. VAN TLOVE, K. BOUTROS, J.
REDWING, J.W. YANG, Q. CHEN, MA. KHAN, W. SCHAFF, AND M. MURPHY THE
INFLUENCE OF SPONTANEOUS AND PIEZOELECTRIC POLARIZATION ON NOVEL
ALGAN/GAN/INGAN DEVICE STRUCTURES 501 B.E. FOUTZ, MJ. MURPHY, O.
AMBACHER, V. TILAK, JA. SMART, J.R. SHEALY, W.J. SCHAFF, AND L.F.
EASTMAN PIEZOELECTRIC SCATTERING IN LARGE-BANDGAP SEMICONDUCTORS AND
LOW-DIMENSIONAL HETEROSTRUCTURES 507 B.K. RIDLEY, NA. ZAKHLENIUK, CR.
BENNETT, M. BABIKER, AND D.R. ANDERSON *LNVITED PAPER XI ACTIVATION
CHARACTERISTICS OF DONOR AND ACCEPTOR IMPLANTS IN GAN 513 XA. CAO, SJ.
PEARTON, R.K. SINGH, R.Q. WILSON, JA. SEKHAR, J.C. ZOLPER, J. HART, DJ.
RIEGER, RJ. SHUL, HJ. QUO, SJ. PENNYCOOK, AND J.M. ZAVADA TRANSMUTATION
DOPING OF HI-NITRIDES 519 O. POPOVICI HIGH BARRIER HEIGHT N-GAN SCHOTTKY
DIODES WITH A BARRIER HEIGHT OF 1.3 EV BY USING SPUTTERED COPPER METAL
523 W.C. HAI, M. YOKOYAMA, C.Y. CHANG, J.D. QUO, J.S. TSANG, S.H. CHAN,
AND S.M. SZE IIIB-NITRIDE SEMICONDUCTORS FOR HIGH-TEMPERATURE ELECTRONIC
APPLICATIONS 529 X. BAI, D.M. HILL, AND M.E. KORDESCH PHOTO-ASSISTED RIE
OF GAN IN BCI 3 /CI 2 /N 2 535 N. MEDELCI, A. TEMPEZ, I. BERISHEU, D.
STARIKOV, AND A. BENSAOULA CORRELATION OF DRAIN CURRENT PULSED RESPONSE
WITH MICROWAVE POWER OUTPUT IN ALGAN/GAN HEMTS 541 S.C. BTNARI, K.
IKOSSI-ANASTASIOU, W. KRUPPA, H.B. DIETRICH, O. KEINER, R.L. HENRY, D.D.
KOLESKE, AND A.E. WICKENDEN PHOTOIONIZATION SPECTRA OF TRAPS RESPONSIBLE
FOR CURRENT COLLAPSE IN GAN MESFETS 547 P.B. KLEIN, JA. FREITAS, JR.,
AND S.C. BINARI AUTHOR INDEX 553 SUBJECT INDEX 557 XII
|
| any_adam_object | 1 |
| author2 | Binari, Steven C. |
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| building | Verbundindex |
| bvnumber | BV012902255 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UD 8400 |
| ctrlnum | (OCoLC)42009362 (DE-599)BVBBV012902255 |
| dewey-full | 621.3815 |
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| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| genre_facet | Konferenzschrift 1999 San Francisco Calif. |
| id | DE-604.BV012902255 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:35:43Z |
| institution | BVB |
| isbn | 1558994793 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008781335 |
| oclc_num | 42009362 |
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| owner | DE-29T DE-703 DE-83 |
| owner_facet | DE-29T DE-703 DE-83 |
| physical | XIII, 559 S. Ill., graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Wide bandgap semiconductors for high power, high frequency and high temperature applications - 1999 symposium held April 5 - 8, 1999, San Francisco, California, U.S.A. ed.: Steven C. Binari ... Wide-bandgap semiconductors for high-power, high-frequency and high-temperature applications - 1999 Warrendale, Pa. Materials Research Soc. 1999 XIII, 559 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 572 Gallium nitride Congresses Silicon carbide Congresses Wide gap semiconductors Congresses Wide-bandgap Halbleiter (DE-588)4273153-7 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1999 San Francisco Calif. gnd-content Wide-bandgap Halbleiter (DE-588)4273153-7 s DE-604 Binari, Steven C. edt Materials Research Society: Materials Research Society symposia proceedings 572 (DE-604)BV001899105 572 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008781335&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Wide bandgap semiconductors for high power, high frequency and high temperature applications - 1999 symposium held April 5 - 8, 1999, San Francisco, California, U.S.A. Materials Research Society: Materials Research Society symposia proceedings Gallium nitride Congresses Silicon carbide Congresses Wide gap semiconductors Congresses Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| subject_GND | (DE-588)4273153-7 (DE-588)1071861417 |
| title | Wide bandgap semiconductors for high power, high frequency and high temperature applications - 1999 symposium held April 5 - 8, 1999, San Francisco, California, U.S.A. |
| title_alt | Wide-bandgap semiconductors for high-power, high-frequency and high-temperature applications - 1999 |
| title_auth | Wide bandgap semiconductors for high power, high frequency and high temperature applications - 1999 symposium held April 5 - 8, 1999, San Francisco, California, U.S.A. |
| title_exact_search | Wide bandgap semiconductors for high power, high frequency and high temperature applications - 1999 symposium held April 5 - 8, 1999, San Francisco, California, U.S.A. |
| title_full | Wide bandgap semiconductors for high power, high frequency and high temperature applications - 1999 symposium held April 5 - 8, 1999, San Francisco, California, U.S.A. ed.: Steven C. Binari ... |
| title_fullStr | Wide bandgap semiconductors for high power, high frequency and high temperature applications - 1999 symposium held April 5 - 8, 1999, San Francisco, California, U.S.A. ed.: Steven C. Binari ... |
| title_full_unstemmed | Wide bandgap semiconductors for high power, high frequency and high temperature applications - 1999 symposium held April 5 - 8, 1999, San Francisco, California, U.S.A. ed.: Steven C. Binari ... |
| title_short | Wide bandgap semiconductors for high power, high frequency and high temperature applications - 1999 |
| title_sort | wide bandgap semiconductors for high power high frequency and high temperature applications 1999 symposium held april 5 8 1999 san francisco california u s a |
| title_sub | symposium held April 5 - 8, 1999, San Francisco, California, U.S.A. |
| topic | Gallium nitride Congresses Silicon carbide Congresses Wide gap semiconductors Congresses Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| topic_facet | Gallium nitride Congresses Silicon carbide Congresses Wide gap semiconductors Congresses Wide-bandgap Halbleiter Konferenzschrift 1999 San Francisco Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008781335&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
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