The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
Hamburg
Inst. für Angewandte Mathematik
1999
|
| Schriftenreihe: | [Hamburger Beiträge zur angewandten Mathematik / A]
143 |
| Beschreibung: | 15 S. graph. Darst. |
Internformat
MARC
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| 245 | 1 | 0 | |a The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors |c Ingenuin Gasser. [Institut für Angewandte Mathematik der Universität Hamburg] |
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Datensatz im Suchindex
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| id | DE-604.BV012880853 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:35:24Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008767754 |
| oclc_num | 76053636 |
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| physical | 15 S. graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | Inst. für Angewandte Mathematik |
| record_format | marc |
| series2 | [Hamburger Beiträge zur angewandten Mathematik / A] |
| spelling | Gasser, Ingenuin Verfasser aut The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors Ingenuin Gasser. [Institut für Angewandte Mathematik der Universität Hamburg] Hamburg Inst. für Angewandte Mathematik 1999 15 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier [Hamburger Beiträge zur angewandten Mathematik / A] 143 A] [Hamburger Beiträge zur angewandten Mathematik 143 (DE-604)BV000746369 143 |
| spellingShingle | Gasser, Ingenuin The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors |
| title | The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors |
| title_auth | The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors |
| title_exact_search | The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors |
| title_full | The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors Ingenuin Gasser. [Institut für Angewandte Mathematik der Universität Hamburg] |
| title_fullStr | The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors Ingenuin Gasser. [Institut für Angewandte Mathematik der Universität Hamburg] |
| title_full_unstemmed | The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors Ingenuin Gasser. [Institut für Angewandte Mathematik der Universität Hamburg] |
| title_short | The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors |
| title_sort | the initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors |
| volume_link | (DE-604)BV000746369 |
| work_keys_str_mv | AT gasseringenuin theinitialtimelayerproblemandthequasineutrallimitinanonlineardriftdiffusionmodelforsemiconductors |