1997 International Conference on Simulation of Semiconductor Processes and Devices: Cambridge, MA, USA, september 8 - 10, 1997
Saved in:
| Corporate Author: | |
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| Format: | Conference Proceeding Book |
| Language: | English |
| Published: |
Piscataway, NJ
Inst. of Electrical and Electronics Engineers
1997
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| Subjects: | |
| Physical Description: | XII, 353 S. Ill., zahlr. graph. Darst. |
| ISBN: | 0780337751 078033776X |
Staff View
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV012800128 | ||
| 003 | DE-604 | ||
| 005 | 19991006 | ||
| 007 | t | ||
| 008 | 991006s1997 ad|| |||| 10||| eng d | ||
| 020 | |a 0780337751 |9 0-7803-3775-1 | ||
| 020 | |a 078033776X |9 0-7803-3776-X | ||
| 035 | |a (OCoLC)37738890 | ||
| 035 | |a (DE-599)BVBBV012800128 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-703 |a DE-83 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.3815/2/015118 |2 21 | |
| 084 | |a UP 2800 |0 (DE-625)146366: |2 rvk | ||
| 084 | |a UP 3100 |0 (DE-625)146372: |2 rvk | ||
| 111 | 2 | |a International Conference on Simulation of Semiconductor Processes and Devices |n 2 |d 1997 |c Cambridge, Mass. |j Verfasser |0 (DE-588)5275052-8 |4 aut | |
| 245 | 1 | 0 | |a 1997 International Conference on Simulation of Semiconductor Processes and Devices |b Cambridge, MA, USA, september 8 - 10, 1997 |c SISPAD '97 |
| 246 | 1 | 3 | |a Nineteen hundred and ninety-seven International Conference on Simulation of Semiconductor Processes and Devices |
| 246 | 1 | 3 | |a Nineteen ninety-seven International Conference on Simulation of Semiconductor Processes and Devices |
| 264 | 1 | |a Piscataway, NJ |b Inst. of Electrical and Electronics Engineers |c 1997 | |
| 300 | |a XII, 353 S. |b Ill., zahlr. graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 7 | |a Semiconducteurs - Simulation, Méthodes de - Congrès |2 ram | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Semiconductors |x Mathematical models |v Congresses | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Mathematisches Modell |0 (DE-588)4114528-8 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1997 |z Cambridge Mass. |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Mathematisches Modell |0 (DE-588)4114528-8 |D s |
| 689 | 0 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-008705053 | ||
Record in the Search Index
| _version_ | 1804127470994063360 |
|---|---|
| any_adam_object | |
| author_corporate | International Conference on Simulation of Semiconductor Processes and Devices Cambridge, Mass |
| author_corporate_role | aut |
| author_facet | International Conference on Simulation of Semiconductor Processes and Devices Cambridge, Mass |
| author_sort | International Conference on Simulation of Semiconductor Processes and Devices Cambridge, Mass |
| building | Verbundindex |
| bvnumber | BV012800128 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 2800 UP 3100 |
| ctrlnum | (OCoLC)37738890 (DE-599)BVBBV012800128 |
| dewey-full | 621.3815/2/015118 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2/015118 |
| dewey-search | 621.3815/2/015118 |
| dewey-sort | 3621.3815 12 515118 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01932nam a2200445 c 4500</leader><controlfield tag="001">BV012800128</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19991006 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">991006s1997 ad|| |||| 10||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0780337751</subfield><subfield code="9">0-7803-3775-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">078033776X</subfield><subfield code="9">0-7803-3776-X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)37738890</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV012800128</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2/015118</subfield><subfield code="2">21</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 2800</subfield><subfield code="0">(DE-625)146366:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3100</subfield><subfield code="0">(DE-625)146372:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">International Conference on Simulation of Semiconductor Processes and Devices</subfield><subfield code="n">2</subfield><subfield code="d">1997</subfield><subfield code="c">Cambridge, Mass.</subfield><subfield code="j">Verfasser</subfield><subfield code="0">(DE-588)5275052-8</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">1997 International Conference on Simulation of Semiconductor Processes and Devices</subfield><subfield code="b">Cambridge, MA, USA, september 8 - 10, 1997</subfield><subfield code="c">SISPAD '97</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Nineteen hundred and ninety-seven International Conference on Simulation of Semiconductor Processes and Devices</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Nineteen ninety-seven International Conference on Simulation of Semiconductor Processes and Devices</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Piscataway, NJ</subfield><subfield code="b">Inst. of Electrical and Electronics Engineers</subfield><subfield code="c">1997</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XII, 353 S.</subfield><subfield code="b">Ill., zahlr. graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs - Simulation, Méthodes de - Congrès</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematisches Modell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Mathematical models</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Mathematisches Modell</subfield><subfield code="0">(DE-588)4114528-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1997</subfield><subfield code="z">Cambridge Mass.</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Mathematisches Modell</subfield><subfield code="0">(DE-588)4114528-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008705053</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1997 Cambridge Mass. gnd-content |
| genre_facet | Konferenzschrift 1997 Cambridge Mass. |
| id | DE-604.BV012800128 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:33:52Z |
| institution | BVB |
| institution_GND | (DE-588)5275052-8 |
| isbn | 0780337751 078033776X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008705053 |
| oclc_num | 37738890 |
| open_access_boolean | |
| owner | DE-703 DE-83 |
| owner_facet | DE-703 DE-83 |
| physical | XII, 353 S. Ill., zahlr. graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | Inst. of Electrical and Electronics Engineers |
| record_format | marc |
| spelling | International Conference on Simulation of Semiconductor Processes and Devices 2 1997 Cambridge, Mass. Verfasser (DE-588)5275052-8 aut 1997 International Conference on Simulation of Semiconductor Processes and Devices Cambridge, MA, USA, september 8 - 10, 1997 SISPAD '97 Nineteen hundred and ninety-seven International Conference on Simulation of Semiconductor Processes and Devices Nineteen ninety-seven International Conference on Simulation of Semiconductor Processes and Devices Piscataway, NJ Inst. of Electrical and Electronics Engineers 1997 XII, 353 S. Ill., zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Semiconducteurs - Simulation, Méthodes de - Congrès ram Mathematisches Modell Semiconductors Mathematical models Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Mathematisches Modell (DE-588)4114528-8 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1997 Cambridge Mass. gnd-content Halbleiter (DE-588)4022993-2 s Mathematisches Modell (DE-588)4114528-8 s DE-604 |
| spellingShingle | 1997 International Conference on Simulation of Semiconductor Processes and Devices Cambridge, MA, USA, september 8 - 10, 1997 Semiconducteurs - Simulation, Méthodes de - Congrès ram Mathematisches Modell Semiconductors Mathematical models Congresses Halbleiter (DE-588)4022993-2 gnd Mathematisches Modell (DE-588)4114528-8 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4114528-8 (DE-588)1071861417 |
| title | 1997 International Conference on Simulation of Semiconductor Processes and Devices Cambridge, MA, USA, september 8 - 10, 1997 |
| title_alt | Nineteen hundred and ninety-seven International Conference on Simulation of Semiconductor Processes and Devices Nineteen ninety-seven International Conference on Simulation of Semiconductor Processes and Devices |
| title_auth | 1997 International Conference on Simulation of Semiconductor Processes and Devices Cambridge, MA, USA, september 8 - 10, 1997 |
| title_exact_search | 1997 International Conference on Simulation of Semiconductor Processes and Devices Cambridge, MA, USA, september 8 - 10, 1997 |
| title_full | 1997 International Conference on Simulation of Semiconductor Processes and Devices Cambridge, MA, USA, september 8 - 10, 1997 SISPAD '97 |
| title_fullStr | 1997 International Conference on Simulation of Semiconductor Processes and Devices Cambridge, MA, USA, september 8 - 10, 1997 SISPAD '97 |
| title_full_unstemmed | 1997 International Conference on Simulation of Semiconductor Processes and Devices Cambridge, MA, USA, september 8 - 10, 1997 SISPAD '97 |
| title_short | 1997 International Conference on Simulation of Semiconductor Processes and Devices |
| title_sort | 1997 international conference on simulation of semiconductor processes and devices cambridge ma usa september 8 10 1997 |
| title_sub | Cambridge, MA, USA, september 8 - 10, 1997 |
| topic | Semiconducteurs - Simulation, Méthodes de - Congrès ram Mathematisches Modell Semiconductors Mathematical models Congresses Halbleiter (DE-588)4022993-2 gnd Mathematisches Modell (DE-588)4114528-8 gnd |
| topic_facet | Semiconducteurs - Simulation, Méthodes de - Congrès Mathematisches Modell Semiconductors Mathematical models Congresses Halbleiter Konferenzschrift 1997 Cambridge Mass. |
| work_keys_str_mv | AT internationalconferenceonsimulationofsemiconductorprocessesanddevicescambridgemass 1997internationalconferenceonsimulationofsemiconductorprocessesanddevicescambridgemausaseptember8101997 AT internationalconferenceonsimulationofsemiconductorprocessesanddevicescambridgemass nineteenhundredandninetyseveninternationalconferenceonsimulationofsemiconductorprocessesanddevices AT internationalconferenceonsimulationofsemiconductorprocessesanddevicescambridgemass nineteenninetyseveninternationalconferenceonsimulationofsemiconductorprocessesanddevices |