Growth, processing and characterization of semiconductor heterostructures: symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A.
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Pittsburgh, Pa.
Materials Research Soc.
1994
|
| Schriftenreihe: | Materials Research Society symposia proceedings
326 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIII, 602 S. zahlr. Ill. und graph. Darst. |
| ISBN: | 1558992251 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV012719673 | ||
| 003 | DE-604 | ||
| 005 | 20140825 | ||
| 007 | t | ||
| 008 | 990817s1994 ad|| |||| 10||| eng d | ||
| 020 | |a 1558992251 |9 1-55899-225-1 | ||
| 035 | |a (OCoLC)246781856 | ||
| 035 | |a (DE-599)BVBBV012719673 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-703 |a DE-83 |a DE-11 |a DE-355 | ||
| 082 | 0 | |a 621.3815/2 |2 20 | |
| 084 | |a UD 8400 |0 (DE-625)145545: |2 rvk | ||
| 084 | |a UP 3150 |0 (DE-625)146377: |2 rvk | ||
| 084 | |a UQ 1100 |0 (DE-625)146473: |2 rvk | ||
| 245 | 1 | 0 | |a Growth, processing and characterization of semiconductor heterostructures |b symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A. |c ed.: Godfrey Gumbs ... |
| 264 | 1 | |a Pittsburgh, Pa. |b Materials Research Soc. |c 1994 | |
| 300 | |a XIII, 602 S. |b zahlr. Ill. und graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Materials Research Society symposia proceedings |v 326 | |
| 650 | 0 | 7 | |a Heterostruktur |0 (DE-588)4123378-5 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1993 |z Boston Mass. |2 gnd-content | |
| 689 | 0 | 0 | |a Heterostruktur |0 (DE-588)4123378-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Gumbs, Godfrey |d 1948- |e Sonstige |0 (DE-588)152201912 |4 oth | |
| 810 | 2 | |a Materials Research Society |t Materials Research Society symposium proceedings |v 326 |w (DE-604)BV001899105 |9 326 | |
| 856 | 4 | 2 | |m GBV Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008647077&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-008647077 | ||
Datensatz im Suchindex
| _version_ | 1804127383880466432 |
|---|---|
| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 326 GROWTH,
PROCESSING, AND CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES
SYMPOSIUM HELD NOVEMBER 29-DECEMBER 2, 1993, BOSTON, MASSACHUSETTS,
U.S.A. EDITORS: GODFREY GUMBS HUNTER COLLEGE OF CITY UNIVERSITY OF NEW
YORK NEW YORK, NEW YORK, U.S.A. SERGE LURYI AT&T BELL LABORATORIES
MURRAY HILL, NEW JERSEY, U.S.A. BERNARD WEISS UNIVERSITY OF SURREY
GUILFORD, SURREY, UNITED KINGDOM GARY W. WICKS UNIVERSITY OF ROCHESTER
ROCHESTER, NEW YORK, U.S.A. IMIRISI MATERIALS RESEARCH SOCIETY
PITTSBURGH, PENNSYLVANIA CONTENTS PREFACE AND ACKNOWLEDGMENTS XIII
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS XIV PART I: EPITAXIAL
GROWTH AND CHARACTERIZATION LOCAL INTERFACE COMPOSITION AND BAND OFFSET
TUNING IN ZNSE-GAAS(OOL) HETEROSTRUCTURES 3 R. NICOLINI, L. VANZETTI,
GUIDO MULA, G. BRATINA, L. SORBA, A. MURA, J.E. ANGELO, W.W. GERBERICH,
AND A. FRANCIOSI DEGRADATION AND MICROSTRUCTURE IN II-VI BLUE-GREEN
EMITTERS 9 S. GUHA, H. CHENG, J.M. DEPUYDT, M.A. HAASE, AND J. QIU MBE
GROWTH AND CHARACTERIZATION OF EPITAXIAL MNS AND ZNSE HETEROSTRUCTURES
ON GAAS 15 B.J. SKROMME, Y. ZHANG, W. LIU, B. PARAMESHWARAN, DAVID J.
SMITH, AND S. SIVANANTHAN GROWING PSEUDOMORPHIC LAYERS BEYOND THE
CRITICAL THICKNESS USING FREE-STANDING COMPLIANT SUBSTRATES 21 C.L.
CHUA, W.Y. HSU, F. EJECKAM, A. TRAN, AND Y.H. LO SURFACE DIFFUSION OF A
CATION ADATOM ON A GAAS(001)-(2X4) SURFACE 27 TAKAHISA OHNO, KENJI
SHIRAISHI, AND TOMONORI ITO GROWTH AND CHARACTERIZATION OF GASE AND
GAAS/GASE HETERO- STRUCTURES ON AS-PASSIVATED SI SUBSTRATES 33 J.E.
PALMER, T. SAITOH, T. YODO, AND M. TAMURA CHARACTERIZATION OF INGAAS/INP
EPITAXIAL LAYERS GROWN OVER V-GROOVE PATTERNED INP SUBSTRATES USING GAS
SOURCE MOLECULAR BEAM EPITAXY 39 N.J. BULITKA, A. GUPTA, B.J. ROBINSON,
D.A. THOMPSON, G.C. WEATHERLY, AND J.G. SIMMONS *OMVPE GROWTH OF
MATERIALS FOR RED LASER DIODES 45 D.P. BOUR, D.W. TREAT, R.D. BRINGANS,
R.S. GEELS, AND D.F. WELCH SELECTIVE AREA OMVPE GROWTH OF GALNP ON
PATTERNED GAAS SUBSTRATES USING SEMIMETALLIC AMORPHOUS CARBON MASK 55
KEITH L. WHITTINGHAM, BOBBY L. PITTS, GREGORY F. REDINBO, AND JAMES R.
SHEALY ORDERING AND PHASE SEPARATION IN MOVPE INGAP ALLOYS AND
UNICOMPOSITIONAL QUANTUM WELLS 61 DAVID M. FOLLSTAEDT, RICHARD P.
SCHNEIDER, JR., AND ERIC D. JONES ROOM-TEMPERATURE OPERATION OF
VERTICAL-CAVITY SURFACE- EMITTING LASER ON SI SUBSTRATE 67 TAKASHI
EGAWA, YOSHIAKI HASEGAWA, TAKASHI JIMBO, AND MASAYOSHI UMENO FORMATION
OF GERMANIUM DIOXIDE DURING WET OXIDATION OF SI* N , ALLOY 73 ZHANG,
P.L.F. HEMMENT, R.A. KUBIAK, AND E.H.C. PARKER 5 LP *INVITED PAPER V
ACCURATELY DETERMINING THE COMPOSITION AND THICKNESS OF LAYERS IN A
GAAS/INGAAS SUPERLATTICE 79 K.A. JONES, M.W. COLE, J.R. FLEMISH, R.L.
PFEFFER, P. COOKE, AND H. SHEN EFFECTS OF DRY ETCHING AND HYDROGEN
PASSIVATION ON TRANSPORT PROPERTIES AND PHOTOLUMINESCENCE OF GAAS/ALGAAS
HETEROSTRUCTURES 85 I. MAXIMOV, H. LINKE, P. EMANUELSSON, D. HESSMAN,
WANG QIN, B.K. MEYER, L. SAMUELSON, AND P. OMLING HETEROEPITAXIAL GROWTH
OF CUBIC GAN ON GAAS(LOO) BY REACTIVE NITROGEN SOURCE 91 Z.Q. HE, X.M.
DING, X.Y. HOU, AND XUN WANG *** CHARACTERIZATION OF GAAS PIN DIODES AT
LOW TEMPERATURES ON SI SUBSTRATES 97 G. ARAGON, S.I. MOLINA, L.
GONZALEZ, Y. GONZALEZ, J.V. ANGUITA, F. BRIONES, AND R. GARCIA
INTERFACIAL STRUCTURE OF METAL LAYER FILMS (AL/CR) USING TRANSMISSION
ELECTRON MICROSCOPE 103 GI-HO KIM, CHANGMO SUNG, AND A.S. KARAKASHIAN
PHASE SEPARATED MICROSTRUCTURE AND ITS STABILITY IN INGAAS EPITAXIAL
LAYERS GROWN BY LPE 109 K. LEE, S. MAHAJAN, AND W.C. JOHNSON THE EFFECT
OF GROWTH INTERRUPTION ON STRUCTURAL AND OPTICAL PROPERTIES OF INASP/INP
MULTIPLE QUANTUM WELLS 115 CA. TRAN, J.*. GRAHAM, R.A. MASUT, AND J.L.
BREBNER DAMAGE AND STRAIN IN EPITAXIAL GE 0 10 SI 0 90 AFTER SI
IMPLANTATION FROM 40 TO 150C 121 A. VANTOMME, J.H. SONG, D.Y.C. LIE,
F.H. EISEN, M.-A. NICOLET, *.*. CAMS, AND K. L. WANG OBSERVATION OF
INGAAS/INALAS SURFACE QUANTUM WELLS BY PHOTOREFLECTANCE AND
PHOTOLUMINESCENCE EXCITATION SPECTROSCOPIES 127 S. MONEGER, * BRU, T.
BENYATTOU, G. GUILLOT, E. TOURNIE, AND K. PLOOG STABILITY OF GAAS/SI
SUPERLATTICES DURING MBE GROWTH AND POST-GROWTH ANNEALING 133 J.K. WADE,
P.D. MORAN, H.J. GILLESPIE, G.E. CROOK, AND R.J. MATYI ELECTRONIC
BAND-STRUCTURE OF MG. JZNSSE, SEMICONDUCTOR ALLOY .... 139 K.L. TEO, Y.P
FENG, M.F. LI, AND T.C. CHONG INTERFACE ROUGHNESS-INDUCED CHANGES IN THE
NEAR-E,, SPECTROSCOPIC BEHAVIOR OF SHORT-PERIOD ALAS/GAAS SUPERLATTICES
145 D. CHANDLER-HOROWITZ, J.G. PELLEGRINO, N.V. NGUYEN, P.M. AMIRTHARAJ,
AND S.B. QADRI ELECTRICAL CHARACTERIZATION OF HIGHLY STRAINED ULTRATHIN
INAS/GAAS QUANTUM WELLS 151 F. YU, R. DROOPAD, G.N. MARACAS, J. LIU, R.
RAJESH, AND R.W. CARPENTER CHARACTERIZATION OF PSEUDOMORPHIC SI/SI, X GE
X MULTI-QUANTUM WELL STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY 157 ROGER
T. CARLINE, CHRISTOPHER PICKERING, WENG Y. LEONG, AND DAVID J. ROBBINS
VI GROWTH OF AN INGAAS/ALINGAAS MQW NON-LINEAR ETALON WITH INTEGRATED
1.5** GALNASP/INP EPITAXIAL BRAGG REFLECTOR 163 A.J. DANN, M.A. SALTER,
M.A. FISHER, I. REID, D.T. NEILSON, J.E. EHRLICH, AND A.C. WALKER
ACCURATE MODELING OF THE SUBBAND AND OPTICAL PROPERTIES OF COMPRESSIVE
STRAINED QUANTUM WELLS 169 E. HERBERT LI, K.S. CHAN, AND BERNARD L.
WEISS PHOTOLUMINESCENCE STUDIES OF SI, X GE X /SI HETEROSTRUCTURES GROWN
BY LPCVD 175 M.H. NAZARE, A.J. LEAL DUARTE, G. SCHMIDT, AND K. HEIME
ENHANCEMENT OF THE QUANTUM-CONFINED STARK SHIFT IN DISORDERED, STRAINED
INGAAS/GAAS SINGLE QUANTUM WELLS 181 JOSEPH MICALLEF, E. HERBERT LI, AND
BERNARD L. WEISS GROWTH OF MULTI-LAYER SI/SI. X GE X STRUCTURES USING
RAPID THERMAL CHEMICAL VAPOUR DEPOSITION 187 DAVID W. MCNEILL, B. MERVYN
ARMSTRONG, AND HAROLD S. GAMBLE ANOMOLOUS BEHAVIOR OF DX CENTERS IN
COMPOSITIONALLY GRADED GAAS/AL/JA.^SISI HETEROJUNCTIONS 193 S.R. SMITH
AND A.O. EVWARAYE INFLUENCE OF INTERFACE DISORDER ON THE RAMAN RESPONSE
OF {113}-ORIENTED SUPERLATTICES 199 PEDRO CASTRILLO, LUCIANO COLOMBO,
AND GASPAR ARMELLES EFFECTS OF CRYSTAL ORIENTATIONS ON THE LOWEST
ELECTRONIC ENERGY STATES ORDERING IN (GAAS) N /AL X GA 1 _ X AS) N
SUPERLATTICES 205 D.N. TALWAR, JOHN P. LOEHR, AND B. JOGAI GROWTH AND
CHARACTERIZATION OF EXTREMELY ABRUPT INGAAS QUANTUM WELLS 209 C.J.
PINZONE, E.K. BYRNE, S.K. SPUTZ, R. PEOPLE, J. VANDENBERG, AND S.N.G.
CHU INHOMOGENEOUS SEMICONDUCTOR DEVICE MODELING USING HYDRO- DYNAMIC
BALANCE EQUATIONS 215 J. CAI, H.L. CUI, N.J.M. HORING, AND X.L. LEI
X-RAY SCATTERING STUDIES OF SIO X /SI/GE(001) 221 S.D. KOSOWSKY, C.-H.
HSU, P.S. PERSHAN, J. BEVK, AND B.S. FREER OXIDATION OF EPITAXIAL- AND
POLYCRYSTALLINE-SIGE ALLOYS 227 HIROSHI TSUTSU, WILLIAM J. EDWARDS,
DIETER G. AST, AND THEODORE I. KAMINS REFRACTORY METAL CONTACTS TO
N-TYPE INP AND INGAAS 233 K.C. SONG, D.V. STEVANOVIC, D.A. THOMPSON, AND
J.G. SIMMONS PART II: QUANTUM WELLS, WIRES AND DOTS OPTICAL
CHARACTERIZATION OF FOCUSED ION BEAM IMPLANTED ALGAAS/GAAS MULTIPLE
QUANTUM WELL STRUCTURES 241 HOWARD E. JACKSON *INVITED PAPER VII
PHOTOELASTIC WAVEGUIDES FORMED BY INTERFACIAL REACTIONS ON SEMICONDUCTOR
HETEROSTRUCTURES 251 L.S. YU, Z.F. GUAN, F. DENG, Q.Z. LIU, S.A.
PAPPERT, P.K.L. YU, S.S. LAU, J. REDWING, J. GEISZ, T.F. KUECH, H.
KATTELUS, AND I. SUNI OPTICAL CHARACTERIZATION OF A ONE-DIMENSIONAL
ARRAY OF NARROW ANTIWIRES 257 D. HUANG, G. GUMBS, V. FESSATIDIS, AND
N.J.M. HORING SYNTHESIS AND PROCESSING OF NANOCRYSTALLINE GE:SI
MATERIALS 263 SHIN-TUNG NGIAM, KLAVS F. JENSEN, AND K.D. KOLENBRANDER
DIRECT FORMATION OF GAAS-GAALAS QUANTUM DOTS STRUCTURE BY DROPLET
EPITAXY 269 NOBUYUKI KOGUCHI, KEIKO ISHIGE, AND SHIRO TSUKAMOTO
PREPARATION OF II-VI QUANTUM DOT COMPOSITES BY ELECTROSPRAY OMCVD 275 M.
DANEK, K.F. JENSEN, C.B. MURRAY, AND M.G. BAWENDI PHOTOLUMINESCENCE
STUDIES OF SI QUANTUM DOT THIN FILM MATERIALS 281 L.A. CHIU, A.A.
SERAPHIN, AND K.D. KOLENBRANDER INFLUENCE OF GROWTH TEMPERATURE ON
ORDERING IN INGAAS GROWN ON (001) INP USING TERTIARYBUTYLARSINE SOURCE
MOCVD 287 R.S. MCFADDEN, M. SKOWRONSKI, AND S. MAHAJAN DEVICE RELATED
TRANSPORT PROPERTIES OF QUANTUM WELL SYSTEMS 293 X.L. LEI, N.J.M.
HORING, AND H.L. CUI STRUCTURAL CHARACTERIZATION OF SEMICONDUCTOR
HETERO STRUCTURES BY ATOMIC RESOLUTION Z-CONTRAST IMAGING AT 300KV 299
A.J. MCGIBBON, S.J. PENNYCOOK, AND Z. WASILEWSKI GROWTH OF MNSE, CD. *MN
X SE, AND MNS, SE X FILMS BY MOLECULAR BEAM EPITAXY (MBE) AND ELEMENTAL
VAPOR TRANSPORT EPITAXY (EVTE) TECHNIQUES 305 A.I. GURARY, R.A. STALL,
G.S. TOMPA, Y. LU, W.E. MAYO, AND C.Y. HWANG A STRUCTURAL STUDY OF
INP/IRIO 6 ,GA* 3 *AS/INP QUANTUM WELL USING *** . ... 311 SAHN NAHM,
DAE-KON OH, HEE-TAE LEE, AND KYOUNG-IK CHO A STUDY OF
MAGNETIC-FIELD-INDUCED SEMIMETAL TO SEMI CONDUCTOR TRANSITION IN AL X
GA 1=X SB/INAS QUANTUM WELLS 317 IKAI LO, W.C. MITCHEL, AND J.-P. CHENG
PREPARATION AND STRUCTURAL STUDY OF METASTABLE MN PHASE GROWN ON
GAAS(OOL) SUBSTRATE 323 X. JIN, M. ZHANG, G.S. DONG, X.G. ZHU, M. XU, Y.
CHEN, X.L. SHEN, AND XUN WANG ALGALNP/GALNAS/GAAS MODFET DEVICES WITH
SELF-ALIGNED P + -GAAS GATE STRUCTURE 329 W. PLETSCHEN, K.H. BACHERN,
P.J. TASKER, AND K. WINKLER EPITAXIAL GROWTH OF ZNSE ON S-PASSIVATED
GAAS(LOO) SUBSTRATE 335 W.Z. CAI, Z.S. LI, J. WANG, AZIZ UL-HAQ QURESHI,
AND XUN WANG HOT WALL EPITAXIAL GROWTH OF DILUTED MAGNETIC SEMICONDUCTOR
ZN^I^SEOLL) ON GAAS(LOO) SUBSTRATE 341 J. WANG, CS. ZHU, AZIZ-UI-HAQ
QURESHI, AND XUN WANG VIII CHARACTERIZATION OF GALLIUM NITRIDE GROWN ON
(0001) SAPPHIRE BY PLASMA-ENHANCED ATOMIC LAYER EPITAXY 347 C.-Y. HWANG,
P. LU, W.E. MAYO, Y. LU, AND H. LIU MICROSTRUCTURAL STUDY OF GAN GROWN
ON SAPPHIRE BY MOCVD 353 SAKET CHADDA, MIKE PELCYNSKI, KEVIN MALLOY, AND
STEVE HERSEE COMBINED OPTICAL, STRUCTURAL AND THEORETICAL ASSESSMENT OF
MOCVD GROWN MULTIPLE GAAS QUANTUM WELLS 359 Z.C. FENG, J. CEN, K.K.
BAJAJ, R.L. MESSHAM, L.L. CLEMEN, M. YOGANATHAN, AND W.J. CHOYKE MOVPE
GROWTH OF GALNP/ALGALNP HETEROSTRUCTURE FOR VISIBLE LASER 365 MYEONG S.
OH, NAM H. KIM, JONG W. LEE, JUN Y. KIM, AND TAE I. KIM OPTICAL
CHARACTERIZATION OF ULTRA-THIN INAS STRAIN-LAYER QUANTUM WELLS GROWN ON
(511) GAAS SUBSTRATE 371 WEIMIN ZHOU, H. SHEN, M.W. COLE, D. MILLER, AND
M. DUTTA EFFECTS OF REACTIVE ION ETCHING ON PHONON-ELECTRON INTER-
ACTIONS IN INALAS-INGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR
STRUCTURES STUDIED BY RAMAN SCATTERING 377 J.E. MASLAR, J.F. DORSTEN,
P.W. BOHN, S. AGARWALA, I. ADESIDA, C. CANEAU, AND R. BHAT OPTICAL
STUDIES OF FREE AND ACCEPTOR-BOUND EXCITONS IN GAAS/ALGAAS SYMMETRIC
COUPLED DOUBLE QUANTUM WELL STRUCTURES 383 Q.X. ZHAO, P.O. HOLTZ, B.
MONEMAR, B.O. FIMLAND, AND K. JOHANNESSEN CHARACTERIZATION OF VALENCE
BAND OFFSETS IN P-SI/SIGE/SI BY SPACE CHARGE SPECTROSCOPY 389 K.
SCHMALZ, H. RUECKER, I.N. YASSIEVICH, H.G. GRIMMEISS, W. MEHR, H.
FRANKENFELD, H.J. OSTEN, P. SCHLEY, AND I. BABANSKAYA STRAIN RELAXATION
AND SURFACE ROUGHNESS AS A FUNCTION OF GROWTH TEMPERATURE IN LINEARLY
GRADED IN^AL, ^S (X=0.05 TO 0.25) BUFFERS 395 J.A. OLSEN, E.L. HU, S.R.
LEE, I.J. FRITZ, A.J. HOWARD, B.E. HAMMONS, AND J.Y. TSAO SIMULATED
EMISSION FROM EXCITONS IN A QUANTUM WIRE LASER FABRICATED BY CLEAVED
EDGE OVERGROWTH 401 WERNER WEGSCHEIDER, LOREN PFEIFFER, MARC DIGRAM,
ARON PINCZUK, AND KENNETH WEST ATOMIC RELAXATION OF A JUNCTION PROFILE
407 RYOICHI KIKUCHI, LONG-QING CHEN, AND AREZKI BELDJENNA USE OF
QUANTUM-WELL SUPERLATTICES TO OBTAIN A HIGH FIGURE OF MERIT FROM
NONCONVENTION AL THERMOELECTRIC MATERIALS 413 L.D. HICKS AND M.S.
DRESSELHAUS LUMINESCENCE POLARIZATION OF CARRIERS CONFINED IN QUANTUM
WIRES 419 VLADIMIR I. PEREL AND IRINA N. YASSIEVICH RAMAN SCATTERING
FROM [(CDSEWZNSE)J-ZNSE QUANTUM WELLS 425 Z.P. WANG, H.X. HAN, Z.X. LIU,
W.T. QIN, Z.L. PENG, AND S.X. YUAN EMITTER-BASE SEPARATION TECHNIQUES
FOR RESONANT TUNNELING LIGHT EMITTING TRANSISTORS 431 JAN GENOE, C. VAN
HOOF, AND G. BORGHS MAGNETO-OPTICAL STUDY OF NEGATIVE PERSISTENT
PHOTO-EFFECT IN INAS/AL 0 ,GA 0 5 SB QUANTUM WELLS 437 J.-P. CHENG, IKAI
LO, AND W.C. MITCHEL PART III: OPTICAL CHARACTERIZATION OPTICAL
CHARACTERIZATION OF QUANTUM WELL STRUCTURES 445 EMIL S. KOTELES
MODULATED MAGNETIC PHASE TRANSITIONS IN SHORT PERIOD EUTE/PBTE
SUPERLATTICES 457 J.J. CHEN, G. DRESSELHAUS, M.S. DRESSELHAUS, G.
SPRINGHOLZ, AND G. BAUER OPTIMIZATION OF OHMIC CONTACTS ON
LATTICE-MATCHED AND PSEUDOMORPHIC ALINAS/INGAAS/INP 463 M. VAN HOVE, T.
SKRABKA, H. BENDER, W. DE RAEDT, M. VAN ROSSUM, AND Y. BAEYENS SCHOTTKY
CHARACTERISTICS OF CONTACTS TO COMPLEX HETERO- STRUCTURES 469 S. FUJITA,
T. NODA, C. NOZAKI, A. WAGAI, AND Y. ASHIZAWA DC CHARACTERISTICS (I-V)
OF PSEUDOMORPHIC GAAS/INGAAS/ALGAAS QUANTUM-WIRE FETS 475 J. BLANCHET,
P. DEBRAY, S. BOLLAERT, AND A. CAPPY COMPARATIVE PHOTOLUMINESCENCE
MEASUREMENT AND SIMULATION OF VERTICAL-CAVITY SEMICONDUCTOR LASER
STRUCTURES 483 D.T. SCHAAFSMA, D.H. CHRISTENSEN, R.K. HICKERNELL, AND
J.G. PELLEGRINO THERMAL EMISSION AND VERTICAL-TRANSPORT STUDIES IN III/V
SEMICONDUCTOR MULTI-QUANTUM-WELL STRUCTURES 489 S. WEBER, W. LIMMER, K.
THONKE, R. SAUER, *. BAIER, D. GEIGER, H. MEYER, AND *. PANZLAFF
LUMINESCENCE STUDY FOR BAND DISCONTINUITY IN FREE-STANDING CDZNS/ZNS
STRAINED LAYER MULTI-QUANTUM WELLS 495 T. YOKOGAWA, T. ISHIKAWA, J.L.
MERZ, AND T. TAGUCHI OBSERVATION OF THE STARK EFFECT IN GAAS/AIGAAS
COUPLED QUANTUM WELLS BY ELECTROLUMINESCENCE AND CIRCULARLY POLARIZED
PHOTOLUMINESCENCE EXCITATION 501 Y. ***, Y. TAKAHASHI, S. FUKATSU, Y.
SHIRAKI, AND R. ITO INVESTIGATION OF BI-EXCITON FORMATION IN DOPED
GAASAL X GA (1 AS QUANTUM WELLS 507 C.I. HARRIS, B. MONEMAR, P.O. HOLTZ,
M. SUNDARAM, J.L. MERZ, AND A.C. GOSSARD »MODULATION SPECTROSCOPY
CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES 513 H. QIANG, D. YAN,
YICHUN YIN, AND FRED H. POLLAK ELECTRIC-FIELD DEPENDENCE OF
ELECTROREFLECTANCE AND PHOTO- CURRENT SPECTRA AT VISIBLE WAVELENGTHS IN
MOVPE-GROWN INALGAP MULTIPLE STRAINED QUANTUM-WELL STRUCTURES 525 I.J.
FRITZ, O. BLUM, R.P. SCHNEIDER, JR., A.J. HOWARD, AND D.M. FOLLSTAEDT
INVITED PAPER X TIME RESOLVED PHOTOLUMINESCENCE FROM PATTERNED
GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES 531 XUELONG CAO, AHN GOO
CHOO, L.M. SMITH, HOWARD E. JACKSON, P. CHEN, AND A.J. STECKL
PHOTOLUMINESCENCE FROM 2D ELECTRON GAS AND MANY BODY EFFECTS AS A PROBE
OF THE CRYSTALLINE QUALITY OF PSEUDOMORPHIC GAAS/INGAAS/ALGAAS AND
GAAS/N(GAAS)I 0 (N+L) (INAS) M /ALGAAS MODFET STRUCTURES 537 A. TABATA,
T. BENYATTOU, G. GUILLOT, M.V. BAETA MOREIRA, AND M.A. PY OPTICAL AND
CYCLOTRON RESONANCE INVESTIGATIONS ON GALNP/GAAS EPITAXIAL LAYERS 543 P.
EMANUELSSON, M. DRECHSLER, D.M. HOFMANN, *.*. MEYER, M. MOSER, AND F.
SCHOLZ ABSORPTION COEFFICIENT MEASUREMENTS OF ALGAAS/GAAS HETERO-
JUNCTION STRUCTURES USING TRANSIENT PHOTOLUMINESCENCE SPECTROSCOPY 549
K.H. SIEK, D.L. DOERING, R.N. SACKS, AND L.L. TONGSON MANY-BODY EFFECTS
ON TEMPERATURE-DEPENDENCE OF THE INTERBAND ABSORPTION IN QUANTUM WELLS
555 G. GUMBS, D. HUANG, AND V. FESSATIDIS SIMULTANEOUS PLANARIZED
SELECTIVE-AREA EPITAXY OF GA X IN, X AS IN NORMAL AND DOVE-TAIL ETCHED
GROOVES 561 H.M. COX, D.M. HWANG, M.R. FREI, *. CANEAU, M. GRUNDMANN,
AND D. BIMBERG HETEROSTRUCTURE DOPING BY COMPACT ELECTRON BEAM SOURCES
567 P.P. CHOW, J. VAN HOVE, M.F. ROSAMOND, G.L. CARPENTER, AND L.A. CHOW
NONLINEAR OPTICAL PROPERTIES OF ULTRANARROW P-TYPE GAAS QUANTUM WELLS :
573 Z. XU, J.V. VANDYSHEV, P.M. FAUCHET, G.W. WICKS, M.J. SHAW, M.
JAROS, B. RICHMAN, AND C. RELLA COMPARISON OF THE SUBBAND TRANSITIONS IN
ASYMMETRIC AND SYMMETRIC GAAS/IN X GA, AS/ALGA^AS QUANTUM WELLS 579 K.
PIEGER, J. STRAKA, A. FORCHEL, V. KULAKOVSKII, AND T.L. REINECKE A
TIGHT-BINDING THEORY OF THE ELECTRONIC STRUCTURES FOR RHOMBOHEDRAL
SEMIMETALS AND SB/GASB, SB/ALSB SUPERLATTICES 585 J.H. XU, E.G. WANG,
CS. TING, AND W.P. SU IR, VISIBLE, AND UV PHOTOLUMINESCENCE DEPENDENCE
ON THE COMPOSITION OF QUANTUM NANOCRYSTALS 591 S.I. KIM, T. HART, B.K.
KHAN, G.S. TOMPA, Y. LU, G. SUN, AND J. KHURGIN AUTHOR INDEX 597 SUBJECT
INDEX 601 XI
|
| any_adam_object | 1 |
| author_GND | (DE-588)152201912 |
| building | Verbundindex |
| bvnumber | BV012719673 |
| classification_rvk | UD 8400 UP 3150 UQ 1100 |
| ctrlnum | (OCoLC)246781856 (DE-599)BVBBV012719673 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01744nam a2200385 cb4500</leader><controlfield tag="001">BV012719673</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20140825 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">990817s1994 ad|| |||| 10||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1558992251</subfield><subfield code="9">1-55899-225-1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)246781856</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV012719673</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-355</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UD 8400</subfield><subfield code="0">(DE-625)145545:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3150</subfield><subfield code="0">(DE-625)146377:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 1100</subfield><subfield code="0">(DE-625)146473:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Growth, processing and characterization of semiconductor heterostructures</subfield><subfield code="b">symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A.</subfield><subfield code="c">ed.: Godfrey Gumbs ...</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Pittsburgh, Pa.</subfield><subfield code="b">Materials Research Soc.</subfield><subfield code="c">1994</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XIII, 602 S.</subfield><subfield code="b">zahlr. Ill. und graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Materials Research Society symposia proceedings</subfield><subfield code="v">326</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heterostruktur</subfield><subfield code="0">(DE-588)4123378-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1993</subfield><subfield code="z">Boston Mass.</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Heterostruktur</subfield><subfield code="0">(DE-588)4123378-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gumbs, Godfrey</subfield><subfield code="d">1948-</subfield><subfield code="e">Sonstige</subfield><subfield code="0">(DE-588)152201912</subfield><subfield code="4">oth</subfield></datafield><datafield tag="810" ind1="2" ind2=" "><subfield code="a">Materials Research Society</subfield><subfield code="t">Materials Research Society symposium proceedings</subfield><subfield code="v">326</subfield><subfield code="w">(DE-604)BV001899105</subfield><subfield code="9">326</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">GBV Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008647077&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008647077</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1993 Boston Mass. gnd-content |
| genre_facet | Konferenzschrift 1993 Boston Mass. |
| id | DE-604.BV012719673 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:32:29Z |
| institution | BVB |
| isbn | 1558992251 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008647077 |
| oclc_num | 246781856 |
| open_access_boolean | |
| owner | DE-703 DE-83 DE-11 DE-355 DE-BY-UBR |
| owner_facet | DE-703 DE-83 DE-11 DE-355 DE-BY-UBR |
| physical | XIII, 602 S. zahlr. Ill. und graph. Darst. |
| publishDate | 1994 |
| publishDateSearch | 1994 |
| publishDateSort | 1994 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series2 | Materials Research Society symposia proceedings |
| spelling | Growth, processing and characterization of semiconductor heterostructures symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A. ed.: Godfrey Gumbs ... Pittsburgh, Pa. Materials Research Soc. 1994 XIII, 602 S. zahlr. Ill. und graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society symposia proceedings 326 Heterostruktur (DE-588)4123378-5 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1993 Boston Mass. gnd-content Heterostruktur (DE-588)4123378-5 s DE-604 Gumbs, Godfrey 1948- Sonstige (DE-588)152201912 oth Materials Research Society Materials Research Society symposium proceedings 326 (DE-604)BV001899105 326 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008647077&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Growth, processing and characterization of semiconductor heterostructures symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A. Heterostruktur (DE-588)4123378-5 gnd |
| subject_GND | (DE-588)4123378-5 (DE-588)1071861417 |
| title | Growth, processing and characterization of semiconductor heterostructures symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A. |
| title_auth | Growth, processing and characterization of semiconductor heterostructures symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A. |
| title_exact_search | Growth, processing and characterization of semiconductor heterostructures symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A. |
| title_full | Growth, processing and characterization of semiconductor heterostructures symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A. ed.: Godfrey Gumbs ... |
| title_fullStr | Growth, processing and characterization of semiconductor heterostructures symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A. ed.: Godfrey Gumbs ... |
| title_full_unstemmed | Growth, processing and characterization of semiconductor heterostructures symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A. ed.: Godfrey Gumbs ... |
| title_short | Growth, processing and characterization of semiconductor heterostructures |
| title_sort | growth processing and characterization of semiconductor heterostructures symposium held november 29 december 2 1993 boston massachusetts u s a |
| title_sub | symposium held November 29 - December 2, 1993, Boston, Massachusetts, U.S.A. |
| topic | Heterostruktur (DE-588)4123378-5 gnd |
| topic_facet | Heterostruktur Konferenzschrift 1993 Boston Mass. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008647077&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT gumbsgodfrey growthprocessingandcharacterizationofsemiconductorheterostructuressymposiumheldnovember29december21993bostonmassachusettsusa |