Mechanisms of heteroepitaxial growth: symposium held April 27 - 30, 1992, San Francisco, California, U.S.A.
Saved in:
| Other Authors: | |
|---|---|
| Format: | Conference Proceeding Book |
| Language: | English |
| Published: |
Pittsburgh, Pa.
Materials Research Soc.
1992
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| Series: | Materials Research Society: Materials Research Society symposia proceedings
263 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XI, 514 S. Ill., graph. Darst. |
| ISBN: | 1558991581 |
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| 245 | 1 | 0 | |a Mechanisms of heteroepitaxial growth |b symposium held April 27 - 30, 1992, San Francisco, California, U.S.A. |c ed.: Matthew F. Chisholm ... |
| 264 | 1 | |a Pittsburgh, Pa. |b Materials Research Soc. |c 1992 | |
| 300 | |a XI, 514 S. |b Ill., graph. Darst. | ||
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| 490 | 1 | |a Materials Research Society: Materials Research Society symposia proceedings |v 263 | |
| 650 | 4 | |a Crystal growth |v Congresses | |
| 650 | 4 | |a Molecular beam epitaxy |v Congresses | |
| 650 | 4 | |a Surfaces (Physics) |v Congresses | |
| 650 | 4 | |a Surfaces (Technology) |v Congresses | |
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Record in the Search Index
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 263 MECHANISMS
OF HETEROEPITAXIAL GROWTH SYMPOSIUM HELD APRIL 27-30, 1992, SAN
FRANCISCO, CALIFORNIA, U.S.A. EDITORS: MATTHEW F. CHISHOLM OAK RIDGE
NATIONAL LABORATORY OAK RIDGE, TENNESSEE, U.S.A. ROBERT HULL AT&T BELL
LABORATORIES MURRAY HILL, NEW JERSEY, U.S.A. LEO J. SCHOWALTER
RENSSELAER POLYTECHNIC INSTITUTE TROY, NEW YORK, U.S.A. BARBARA J.
GARRISON PENNSYLVANIA STATE UNIVERSITY UNIVERSITY PARK, PENNSYLVANIA,
U.S.A. MATERIALS RESEARCH SOCIETY PITTSBURGH, PENNSYLVANIA CONTENTS
PREFACE XI MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS XUE PART I:
SURFACE STRUCTURE AND THIN FILM EVOLUTION »ATOMIC PROCESSES IN SILICON
HETERO-EPITAXY 3 J.A. VENABLES, J.S. DRUCKER, AND G. RAYNERD
»STEP-DRIVEN SURFACE SEGREGATION AND ORDERING DURING SI-GE MBE GROWTH 9
D.E. JESSON, S.J. PENNYCOOK, J.-M. BARIBEAU, AND D.C. HOUGHTON THE
INFLUENCE OF SURFACTANTS ON THE GROWTH OF GERMANIUM LAYERS ON SILICON
SURFACES BY MBE 17 H.J. OSTEN, J. KLATT, G. LIPPERT, E. BUGIEL, AND B.
DIETRICH FORMATION OF HETEROGENEOUS THICKNESS MODULATIONS DURING
EPITAXIAL GROWTH OF LPCVD-SI,. X GE /SI QUANTUM 23 L. VESCAN, W. JAEGER,
*. DIEKER, *. SCHMIDT, A. HARTMANN, AND H. LUETH HETEROEPITAXIAL GROWTH
OF TRANSITION-METAL NITRIDE FILMS 29 M. SHINN, P.B. MIRKARIMI, AND S.A.
BARNETT MOLECULAR BEAM EPITAXY STUDY OF INAS/GASB HETEROEPITAXY ON THE
(111)A AND (111)B ORIENTATIONS 35 J.A. DURA, J.T. ZBOROWSKI, AND T.D.
GOLDING SCANNING TUNNELING MICROSCOPE STUDIES OF INITIAL EPITAXIAL
GROWTH OF YBA,CU 3 0 7 , THIN FILMS 41 XIANG-YANG ZHENG, D.H. LOWNDES,
SHEN ZHU, AND R.J. WARMACK A MODEL OF SURFACE MISORIENTATION OCCURRING
DURING MBE OF GAAS:BE 47 V.N. BESSOLOV AND M.V. LEBEDEV THE CHEMICAL
INTERACTION OF DISILANE ON GE(100) 53 D.A. LAPIANO-SMITH AND F.R.
MCFEELY AFM STUDY OF FILM GROWTH KINETICS IN HETEROEPITAXY 59 WILLIAM M.
TONG, ERIC J. SNYDER, R. STANLEY WILLIAMS, AKIHISA YANASE, YUSABURO
SEGAWA, AND MARK S. ANDERSON MOLECULAR BEAM EPITAXY GROWTH AND
STRUCTURAL CHARACTERIZATION OF SI/GAAS SUPERLATTICES 65 R.J. MATYI, H.J.
GILLESPIE, G.E. CROOK, AND J.K. WADE STICKING AND DESORPTION
COEFFICIENTS OF AS 4 AND AS 2 DURING GROUP V AND GROUP III CONTROLLED
MBE GROWTH 71 ROUEL FERNANDEZ INITIAL STAGES OF GROWTH OF EPITAXIAL INAS
FILMS ON INP SUBSTRATE 79 K.S. CHANDRA SEKHAR, A.K. BALLAL, L.
SALAMANCA-RIBA, AND D.L. PARTIN »INVITED PAPER V VLPCVD HETEROEPITAXIAL
GROWTH OF VERY THIN GE-LAYERS ON SI-SUBSTRATES 85 MATTY R. CAYMAX, J.
POORTMANS, A. VAN AMMEL, J. NIJS, W. VANDERVORST, J. VANHELLEMONT, AND
B. BRIJS MBE GROWTH AND CHARACTERIZATION OF CDTE, ZNTE EPILAYERS AND
CDTE/ZNCDTE SUPERLATTICES ON GAAS SUBSTRATES 91 A.E. MILOKHIN, E.I.
TROFIMOV, M.V. PETROV, F.F. BALAKIREV, V.D. KUZMIN, V.V. KALININ, AND
U.G. SIDOROV INITIAL STUDIES ON THE HETEROEPITAXIAL GROWTH OF THIN FILMS
OF (AL/IN)N ON A1N-SEEDED (00.1) SAPPHIRE BY SINGLE-TARGET REACTIVE
MAGNETRON SPUTTERING 95 T.J. KISTENMACHER, S.A. ECELBERGER, AND W.A.
BRYDEN INFLUENCE OF THE GROWTH TEMPERATURE ON THE PRESENCE OF
COMPOSITION INHOMOGENEITIES IN IN 052 AL 048 AS LAYERS GROWN BY MBE ON
INP SUBSTRATES 101 F. PEIRO, A. COMET, A. HERMS, J.R. MORANTE, A.
GEORGAKILAS, AND G. HALKIAS INGAAS/GAAS QUANTUM WELL STRUCTURES GROWN BY
MIGRATION- ENHANCED EPITAXY 107 J.E. WU, H.M. YOO, AND T.G. STOEBE
GROWTH OF Y-CUT LINB0 3 LAYERS ON (1102) A1 2 0 3 113 H. ROBINSON, H.J.
MILLEDGE, AND C.W. PITT TRANSMISSION ELECTRON MICROSCOPY STUDY OF
EPITAXIAL CO/AU AND CO/PD (111) MULTILAYERS 119 A.E.M. DE VEIRMAN, F.
HAKKENS, W. COENE, AND F.J.A. DEN BROEDER LOW-TEMPERATURE EPITAXIAL
GROWTH OF GAAS ON SI SUBSTRATES BY MBE 125 TING-YEN CHIANG, EN-HUERY
LIU, DER-HWA YIIN, AND TRI-RUNG YEW INITIAL STAGE OF SOLID PHASE
EPITAXIAL GROWTH OF GAAS FILMS ON VICINAL SI (001) SUBSTRATE 131 W.K.
CHOO, I. KIM, J.Y. LEE, K.I. CHO, J.-L. LEE, AND Y.J. KIM PART II: NOVEL
SYNTHESIS, CHARACTERIZATION AND GEOMETRIES *COLUMNAR AND SUBSURFACE
SILICIDE GROWTH WITH NOVEL MOLECULAR BEAM EPITAXY TECHNIQUES 139 ROBERT
W. FATHAUER, THOMAS GEORGE, AND W. THOMAS PIKE FILMS GROWN ON VICINAL
GAAS(LLL) SUBSTRATES BY MOLECULAR BEAM EPITAXY 151 K. YANG AND L.J.
SCHOWALTER RELAXED SI, X GE X LAYERS ON SIMOX AVOIDING A LATTICE
MISMATCHED HETEROINTERFACE 157 *. HOLLAENDER, S. MANTL, R. BUTZ, W.
MICHELSEN, AND CH. DIEKER IN-SITU GROWTH OF THREE-DIMENSIONALLY CONFINED
STRUCTURES ON PATTERNED GAAS (LLL)B SUBSTRATES 163 K.C. RAJKUMAR, K.
KAVIANI, J. CHEN, P. CHEN, A. MADHUKAR, AND D.H. RICH *INVITED PAPER VI
EFFECT OF BIAXIAL STRESS ON SOLID PHASE EPITAXY OF SILICON 169 GUO-QUAN
LU AND TAPAN K. GUPTA V CONTROLLED GROWTH OF GAAS/ALAS SUPERLATTICES 175
J.E. ANGELO, J.W. HOEHN, A.M. DABIRAN, P.I. COHEN, AND W.W. GERBERICH
LASER-ASSISTED GROWTH OF ZNSE BY METALORGANIC MOLECULAR BEAM EPITAXY 181
C.A. CORONADO, E. HO, L.A. KOLODZIEJSKI, AND CA. HUBER RELATIONSHIP
BETWEEN SELF-TEXTURE AND INTERFACIAL RESTRICTION ON THE EPITAXY OF ZNO
THIN FILMS I 187 NORIFUMI FUJIMURA, SEIKI GOTO, AND TAICHIRO ITO IN-SITU
CHARACTERIZATION OF ALGAAS LAYERS GROWN BY CHEMICAL BEAM EPITAXY USING
DYNAMIC OPTICAL REFLECTIVITY 193 JOHN V. ARMSTRONG AND TREVOR FARRELL
METHOD OF GAAS GROWTH ON SINGLE CRYSTAL SI SUBSTRATE 199 VALERY V.
DOROGAN, V.A. KOSYAK, AND V.G. TROFIM MODELING OF SILICON DEPOSITION
YIELD AT LOW TEMPERATURE BY ARF EXCIMER LASER PHOTOLYSIS OF DISILANE 203
B. FOWLER, S. LIAN, S. KRISHNAN, * LI, L. JUNG, D. SAMARA, I. MANNA, AND
S. BANERJEE MOVPE GROWTH OF GAAS ON SI USING TERTIARYBUTYLARSINE 209 S.
MIYAGAKI, S. OHKUBO, K. TAKAI, N. TAKAGI, M. KIMURA, Y. KIKUCHI, T.
ESHITA, AND K. TAKASAKI AXIAL LATERAL OVERGR INVESTIGATED BY X-RAY
TOPOGRAPHY 215 B. JENICHEN, R. KOEHLER, N. NAGEL, R. BERGMANN, AND E.
BAUSER ALLOTAXY: A NEW METHOD FOR EPITAXIAL GROWTH OF COMPOUND THIN
FILMS 221 S. MANTL, H.L. BAY, AND CH. DIEKER IROEPITAXIAL GROWTH OF GE X
SI, RRH/VLP-CVD 227 ZHENG YOUDOU, ZHANG RONG, HU LIQUN, GU SHULIN,
WANG RONGHUA, HAN PING, AND JIANG RUOLIAN ON MICROFACETING INSTABILITY
OF PT(110) UNDER CATALYTIC OXIDATION OF ADSORBED CO 233 M. PAPOULAR PART
III: INTERNAL SURFACES OBSERVATION OF THE ORDERED COPT, ALLOY IN CO-PT
MULTILAYERS 237 M.F. TONEY, R.F.C FARROW, R.F. MARKS, G. HARP, AND T.A.
RABEDEAU A NEW METHOD OF IDENTIFYING THE INTERFACIAL STRUCTURE IN THE
TYPE-B COSI 2 //SI(LLL) BICRYSTAL 243 A.C. DAYKIN AND C.J. KIELY
EPITAXIAL YSI, AND ERSI, THIN FILMS ON (111) SILICON 249 T.L. LEE, W.D.
SU, AND L.J. CHEN VII INTERDIFFUSION IN MBE-GROWN SYMMETRICALLY AND
ASYMMETRICALLY STRAINED SI/SI, X GE X SUPERLATTICES INVESTIGATED BY ION
SCATTERING 255 *. HOLLAENDER, R. BUTZ, AND S. MANTL IN SITU MONITORING OF
THE SMEAR-OUT OF THE GE PROFILE IN GAS SOURCE SIGE MBE USING RHEED
INTENSITY OSCILLATIONS 261 *. WERNER, S. BUTZKE, J.W. MAES, O.F.Z.
SCHANNEN, J. TROMMEL, S. RADELAAR, AND P. BALK FORMATION OF THE
INTERFACE BETWEEN INP AND ARSENIC BASED ALLOYS BY CHEMICAL BEAM EPITAXY
267 M.C. TAMARGO, M.J.S.P. BRASIL, R.E. NAHORY, D.E. ASPNES, B. PHILIPS,
D.M. HWANG, S.A. SCHWARZ, AND W.E. QUINN ATOMIC STRUCTURE OF INTERFACES
IN EPITAXIAL NISI, ON (001) SILICON 273 W.J. CHEN, F.R. CHEN, AND L.J.
CHEN A STUDY OF INTERDIFFUSION, CRYSTALLINITY, STRAIN AND THERMAL
STABILITY OF SI, X GE X /SI CREATED USING PULSED LASER INDUCED EPITAXY
(PLIE) 279 K.-JOSEF KRAMER, S. TALWAR, K.H. WEINER, AND T.W. SIGMON
RELATIONSHIP BETWEEN SELF-TEXTURE AND INTERFACIAL RESTRICTION ON THE
EPITAXY OF (CA,SR)CU0 2 THIN FILMS 285 SATOSHI NAGAI, HIDEAKI TANAKA,
NORIFUMI FUJIMURA, AND TAICHIRO ITO VAN DER WAALS EPITAXY OF GASE ON
WSE, 291 O. LANG, R. SCHLAF, Y. TOMM, C. PETTENKOFER, AND W. JAEGERMANN
FORMATION OF (1120) ZNO FILMS BY CONTROLLING THE SELF- TEXTURE AND THE
RELAXATION OF FILM STRESS 297 TAKAO YAMAGUCHI, NORIFUMI FUJIMURA, SEIKI
GOTO, AND TAICHIRO ITO PART IV: ELECTRICAL, OPTICAL AND MAGNETIC
PROPERTIES »CHARACTERISATION OF EXTENDED DEFECTS IN SI AND SI, GE X
ALLOYS: THE INFLUENCE OF TRANSITION METAL CONTAMINATION 305 V. HIGGS AND
E.C. LIGHTOWLERS H.R. CHOO, M.C. DOWNER, AND V.P. KESAN 317 »DIFFERENCES
IN THE GROWTH MECHANISM OF IN X GA, X AS ON GAAS STUDIED BY THE
ELECTRICAL PROPERTIES OF AL 3 GA* ,AS/IN X GA, AS HETEROSTRUCTURES (0.2
X 0.4) 323 T. SCHWEIZER, *. KOEHLER, P. GANSER, P. HIESINGER, AND W.
ROTHEMUND MORPHOLOGY AND LOW TEMPERATURE ELECTRICAL TRANSPORT IN
HETEROEPITAXIAL INDIUM NITRIDE FILMS 335 W.A. BRYDEN, S.A. ECELBERGER,
AND T.J. KISTENMACHER CRYSTAL STRUCTURES OF EPITAXIALLY GROWN FE 16 N 2
SINGLE CRYSTAL FILMS WITH GIANT MAGNETIC MOMENTS 341 MATAHIRO KOMURO,
HIROYUKI HOSHIYA, HIROAKI TAKAHASHI, KATSUYA MITSUOKA, AND YUTAKA SUGITA
»INVITED PAPER VIII *** STRUCTURE INVESTIGATIONS OF LOW-TEMPERATURE MBE
GROWN INALAS LAYERS ON INP 001 SUBSTRATE 347 P. WERNER, Z.
LILIENTAL-WEBER, K.M. YU, E.R. WEBER, Z. REK, AND R. METZGER NEAR
BANDGAP OPTICAL ABSORPTION MEASUREMENTS ON INGAAS/INP STRAINED LAYERS
WITH COARSE STRUCTURE 353 P. ROURA, J. BOSCH, A. CORNET, F. PEIRO, J.R.
MORANTE, S.A. CLARK, AND R.H. WILLIAMS SELECTED-AREA EPITAXY OF CDTE ON
GAAS WITH A CANTILEVER SHADOW MASK 359 N.K. DHAR, P. BOYD, M. MARTINKA,
I.D. BENSON, J.H. DINAN, AND A.A. ILIADIS GROWTH AND CHARACTERIZATION OF
GE X SI. X /SI MULTIPLE QUANTUM WELL STRUCTURES 365 D.W. GREVE, R.
MISRA, M.A. CAPANO, AND *.*. SCHLESINGER DEPENDENCE ON MOCVD GROWTH
TEMPERATURE OF THE PHOTOLUMINESCENCE PROPERTIES OF ZNSE, ZNTE, AND
ZNSE,, ,** * ALLOYS AND ZNSE/ZNTE SUPERLATTICES 371 B.E. PONGA, J.
CALAS, M. AVEROUS, T. CLOITRE, O. BRIOT, B. GIL, AND R.L. AULOMBARD
ANISOTROPIC ELECTRON MOBILITY OF TWO-DIMENSIONAL- ELECTRON-GAS IN
MODULATION DOPED INGA, AS/INAL, V AS HETEROSTRUCTURES 377 JIANHUI CHEN,
J.M. FERNANDEZ, AND H.H. WIEDER DOPANT DISTRIBUTION AND ELECTRICAL
CHARACTERISTICS OF BORON-DOPED SI, X GE X /SI P+/N HETEROJUNCTION DIODES
PRODUCED BY GAS IMMERSION LASER DOPING (GILD)/PULSED LASER-INDUCED
EPITAXY (PLIE) 383 K.-JOSEF KRAMER, E. ISHIDA, S. TALWAR, K.H. WEINER,
P.G. CAREY, A.M. MCCARTHY, AND T.W. SIGMON PART V: STRAIN RELIEF
* BARRIERLESS MISFIT DISLOCATION NUCLEATION IN SIGE/SI STRAINED LAYER
EPITAXY 391 D.D. PEROVIC AND D.C. HOUGHTON STRAIN RELIEF MECHANISMS IN
THE GROWTH OF GE X SI, X /SI(110) HETEROSTRUCTURES 403 R. HULL, J.*
BEAN, B. WEIR, L.J. PETICOLAS, D. BAHNCK, AND L.C. FELDMAN INITIAL STAGE
OF INGAAS GROWTH ON GAAS(LOO) 409 D. GERTHSEN, M. LENTZEN, AND A.
FOERSTER PROPERTIES AND STRAIN RELAXATION BELOW ROOM TEMPERATURE OF
EPITAXIAL PBSE AND PB(SE,TE) ON FLUORIDE-COVERED SILICON SUBSTRATES 415
* MAISSEN, H. ZOGG, S. BLUNIER, A. SULTAN, S. TEODOROPOL, T. RICHMOND,
J.W. TOMM, AND G. KOSTORZ PARTIAL DISLOCATIONS AND CRITICAL THICKNESSES
FOR STRAINED LAYER RELAXATION 421 D.M. HWANG, R. BHAT, S.A. SCHWARZ, AND
C.Y. CHEN *INVITED PAPER IX DETECTION OF MISFIT STRAIN RELAXATION IN MBE
GROWN SI, GE^ FILMS BY DYNAMIC MONITORING OF RHEED DIFFRACTION FEATURES
427 J.W. MAES, O.F.Z. SCHANNEN, J. TROMMEL, K. WERNER, S. RADELAAR, AND
P. BALK STRAIN RELIEF IN SRF 2 EPITAXIAL FILMS ON SI(LLL) SUBSTRATES 433
WEIDAN LI, ANTHONY P. TAYLOR, AND LEO J. SCHOWALTER STRAIN RELIEF IN IN
X GA, X AS/GAAS MULTIPLE LAYER SYSTEMS 439 V. KRISHNAMOORTHY, Y.W. LIN,
AND R.M. PARK THE DEPENDENCE OF DEFECT DENSITY IN GE^ X /SI
HETEROSTRUCTURES GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR
DEPOSITION ON DEPOSITION PARAMETERS 445 D. KINOSKY, R. QIAN, T. HSU, J.
IRBY, A. MAHAJAN, S. THOMAS, S. BANERJEE, A. TASCH, C. MAGEE, AND C.L.
GROVE QUATERNARY ALLOYS IN,AL V GA. _ AS GROWN ON GAAS WITH A
COMPOSITIONALLY-STEP-GRADED BUFFER 451 * FAN, D.W. SHIH, M.W. HANSEN, J.
CHEN, P.Z. LEE, AND S.C. ESENER THE EFFECT OF SUBSTRATE SURFACE
ORIENTATION AND EPILAYER THICKNESS ON INGAAS/GAAS EPILAYER TILT AND TILT
DIRECTION 457 J.C.P. CHANG AND K.L. KAVANAGH THE EFFECT OF THE INITIAL
NUCLEATION TEMPERATURE ON THE MISFIT DISLOCATION STRUCTURE OF
INP-ON-GAAS HETEROSTRUCTURES 461 FERENC RIESZ, G. RADNOCZI, B. PECZ, K.
RAKENNUS, T. HAKKARAINEN, A. PESEK, AND K. LISCHKA *** ASSESSMENT OF
DIFFERENT MECHANISMS CONTRIBUTING TO STRESS RELAXATION IN STRAINED
INGAAS/INALAS SYSTEMS 467 F. PEIRO, A. CORNET, J.R. MORANTE, S.A. CLARK,
AND R.H. WILLIAMS X-RAY DIFFRACTION DETERMINATION OF CRITICAL THICKNESS
OF INAS AND INP ON GAAS GROWN BY ATOMIC LAYER MOLECULAR BEAM EPITAXY 473
A. MAZUELAS, L. GONZALEZ, L. TAPFER, AND F. BRIONES STRAIN RELAXATION
VIA INTERFACE NUCLEATION OF MISFIT DISLOCATIONS IN INTERMIXING LAYERS
479 HYO-HOON PARK, JUNG KEE LEE, EL-HANG LEE, JEONG YONG LEE, AND
SOON-KU HONG CONTROL OF THREADING DISLOCATIONS IN LATTICE-MISMATCHED
HETEROEPITAXY 485 L.J. SCHOWALTER, A.P. TAYLOR, J. PETRUZZELLO, J.
GAINES, AND D. OLEGO LOW-DEFECT-DENSITY GE ON SI FOR
LARGE-LATTICE-MISMATCHED SEMICONDUCTOR INTEGRATION AND STRAIN-ENGINEERED
DEVICES 491 D.P. MALTA, J.B. POSTHILL, P.M. ENQUIST, R.J. MARKUNAS, T.P.
HUMPHREYS, AND N.R. PARIKH A MULTIPLICATION MECHANISM FOR MISFIT
DISLOCATIONS 497 MICHAEL A. CAPANO *** STUDY OF TEMPERATURE INFLUENCE ON
THE CRYSTALLINE QUALITY OF INGAAS/SI EPILAYERS 503 A. VILA, A. CORNET,
J.R. MORANTE, AND D.I. WESTWOOD AUTHOR INDEX 509 SUBJECT INDEX 513 X
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| discipline | Physik Fertigungstechnik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1992 San Francisco Calif. gnd-content |
| genre_facet | Konferenzschrift 1992 San Francisco Calif. |
| id | DE-604.BV012713497 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:32:22Z |
| institution | BVB |
| institution_GND | (DE-588)5094255-4 |
| isbn | 1558991581 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008642429 |
| oclc_num | 26724110 |
| open_access_boolean | |
| owner | DE-703 DE-29T DE-83 DE-11 DE-91G DE-BY-TUM |
| owner_facet | DE-703 DE-29T DE-83 DE-11 DE-91G DE-BY-TUM |
| physical | XI, 514 S. Ill., graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Mechanisms of heteroepitaxial growth symposium held April 27 - 30, 1992, San Francisco, California, U.S.A. ed.: Matthew F. Chisholm ... Pittsburgh, Pa. Materials Research Soc. 1992 XI, 514 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 263 Crystal growth Congresses Molecular beam epitaxy Congresses Surfaces (Physics) Congresses Surfaces (Technology) Congresses Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 San Francisco Calif. gnd-content Molekularstrahlepitaxie (DE-588)4170399-6 s Kristallwachstum (DE-588)4123579-4 s DE-604 Chisholm, Matthew F. edt Symposium on Mechanisms of Heteroepitaxial Growth 1992 San Francisco, Calif. Sonstige (DE-588)5094255-4 oth Materials Research Society: Materials Research Society symposia proceedings 263 (DE-604)BV001899105 263 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008642429&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Mechanisms of heteroepitaxial growth symposium held April 27 - 30, 1992, San Francisco, California, U.S.A. Materials Research Society: Materials Research Society symposia proceedings Crystal growth Congresses Molecular beam epitaxy Congresses Surfaces (Physics) Congresses Surfaces (Technology) Congresses Kristallwachstum (DE-588)4123579-4 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| subject_GND | (DE-588)4123579-4 (DE-588)4170399-6 (DE-588)1071861417 |
| title | Mechanisms of heteroepitaxial growth symposium held April 27 - 30, 1992, San Francisco, California, U.S.A. |
| title_auth | Mechanisms of heteroepitaxial growth symposium held April 27 - 30, 1992, San Francisco, California, U.S.A. |
| title_exact_search | Mechanisms of heteroepitaxial growth symposium held April 27 - 30, 1992, San Francisco, California, U.S.A. |
| title_full | Mechanisms of heteroepitaxial growth symposium held April 27 - 30, 1992, San Francisco, California, U.S.A. ed.: Matthew F. Chisholm ... |
| title_fullStr | Mechanisms of heteroepitaxial growth symposium held April 27 - 30, 1992, San Francisco, California, U.S.A. ed.: Matthew F. Chisholm ... |
| title_full_unstemmed | Mechanisms of heteroepitaxial growth symposium held April 27 - 30, 1992, San Francisco, California, U.S.A. ed.: Matthew F. Chisholm ... |
| title_short | Mechanisms of heteroepitaxial growth |
| title_sort | mechanisms of heteroepitaxial growth symposium held april 27 30 1992 san francisco california u s a |
| title_sub | symposium held April 27 - 30, 1992, San Francisco, California, U.S.A. |
| topic | Crystal growth Congresses Molecular beam epitaxy Congresses Surfaces (Physics) Congresses Surfaces (Technology) Congresses Kristallwachstum (DE-588)4123579-4 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| topic_facet | Crystal growth Congresses Molecular beam epitaxy Congresses Surfaces (Physics) Congresses Surfaces (Technology) Congresses Kristallwachstum Molekularstrahlepitaxie Konferenzschrift 1992 San Francisco Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008642429&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
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