Blue laser and light emitting diodes II:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Amsterdam [u.a.]
IOS Press [u.a.]
1998
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XX, 736 S. Ill., graph. Darst. |
| ISBN: | 9051994559 4274902455 |
Internformat
MARC
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Datensatz im Suchindex
| _version_ | 1804127287579246592 |
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| adam_text | 61 CD UB/TIB HANNOVER BLUE LASER AND LIGHT EMITTING DIODES N EDITED BY
K.ONABE K.HIRAMATSU K.ITAYA Y.NAKANO OHMSHA IOS PRESS TABLE OF CONTENTS
PREFACE COMMITTEE MEMBERS ACKNOWLEDGMENT 1. PLENARY GALLIUM-NITRIDE
VERSUS ZINC-SELENIDE LASERS: A REAL ISSUE? (INVITED) 3 G. LANDWEHR
PROGRESS AND PROSPECTS OF GROUP III NITRIDE SEMICONDUCTORS (INVITED) 9
/. AKASAKI 2. EPITAXIAL GROWTH RECENT PROGRESS IN EPITAXIAL LATERAL
OVERGROWTH TECHNIQUE FOR GROWING BULK GAN BY HVPE (INVITED) 17 A. USUI,
H. SUNAKAWA, N. KURODA, A. KIMURA, A. SAKAI, AND A. A. YAMAGUCHI MBE
GROWTH AND DEVICE CHARACTERIZATION OF BE-BASED MATERIALS FOR APPLICATION
TO BLUE-GREEN LASER DIODES 22 M. W. CHO, J. H. CHANG, H. MAKINO, T. YAO,
A. ISHIBASHI, M. Y. SHEN, AND T. GOTO PREPARATION AND PROPERTIES OF
FREE-STANDING HVPE GROWN GAN SUBSTRATES 26 S. T. KIM, D. C. MOON, AND C.
H. HONG ZNS-BASED ALLOYS AND ZNCDS/ZNMGS DH STRUCTURES ON GAP GROWN BY
MOLECULAR BEAM EPITAXY 30 K. ICHINO, K. UEYAMA, H. KARIYA, T. KAWAKAMI,
M. YAMAMOTO, M. KITAGAWA, AND H. KOBAYASHI 3. GROWTH & CHARACTERIZATION
I MICROSTMCTURE AND ELECTRONIC PROPERTIES OF GAN LATERALLY OVERGROWN BY
METAL ORGANIC CHEMICAL VAPOR DEPOSITION (INVITED) 37 J. S. SPECK, H.
MARCHAND, P. KOZODOY, P. T. FINI, X. H. WU, J. P. IBBETSON, S. KELLER,
S. P. DENBAARS, U. K. MISHRA, AND S. J. ROSNER GAN/ALGAN QUANTUM WELLS
GROWN BY STEP-FLOW MODE MOVPE ON SIC SUBSTRATE 44 T. NISHIDA, M.
KUMAGAI, N. MAEDA, AND N. KOBAYASHI PREPARATION OF ALUMINIUM-DOPED ZNO
FILMS BY HELICON-WAVE EXCITED PLASMA SPUTTERING 48 Y. YAMAKI, K. YAMAYA,
H. ARAYA, H. NAKANISHI, AND S. CHICHIBU THE EFFECTS OF ISOELECTRONIC
IN-DOPING IN GAN FILMS GROWN BY MOCVD 52 C. -K. SHU, J. OU, H. -C. LIN,
Y. -C. PAN, W. -H. LEE, W. -K. CHEN, AND M. -C. LEE ARRAY OF II-VI
SEMICONDUCTOR DOTS SELECTIVELY GROWN ON GAAS SURFACES WITH MOMBE 56 A.
UETA, A. AVRAMESCU, H. KUMANO, K. UESUGI, I. SUEMUNE, H. MACHIDA, AND N.
SHIMOYAMA GROWTH OF III-V NITRIDES ON SAPPHIRE (0001) SUBSTRATE BY RF
MBE USING CHEMICAL BEAM FOR III GROUP ELEMENTS SOURCES 60 S. H. CHO, H.
OKUMURA, AND S. YOSHIDA GROWTH MODES OF HEXAGONAL AND CUBIC
SEMICONDUCTOR III-V NITRIDES IN RF-MOLECULAR BEAM EPITAXY 64 B. DAUDIN,
F. WIDMANN, G. FEUILLET, Y. SAMSON, J. L. ROUVIERE, AND N. PELEKANOS IX
4. GROWTH & CHARACTERIZATION II CHARACTERIZATION OF COMPENSATING CENTERS
IN NITROGEN-DOPED ZNSE (INVITED) 69 Z. ZHU, T. YAO, B. C. CAVENETT, AND
K. A. PRIOR IN-SITU MONITORING OF THE SURFACE KINETICS OF THE CUBIC GAN
FILMS IN MOVPE USING SPECTROSCOPIC ELLIPSOMETRY 74 Y. TANIYASU, E. SATO,
H. SATO, N. SHIMOYAMA, A. JIA, M. SHIMOTOMAI, Y. KATO, M. KOBAYASHI, A.
YOSHIKAWA, AND K. TAKAHASHI EXCIMER LASER DOPING FOR P + -ZNSE LAYER
FORMATION 78 T. AOKI, H. YAMAMOTO, Y. AOKI, Y. NAKANISHI, AND Y.
HATANAKA EFFECTS OF ATOMIC HYDROGEN ON THE GROWTH OF GAN GROWN BY RF-MBE
82 Y. OKAMOTO, S. HASHIGUCHI, Y. OKADA, AND M. KAWABE CHARACTERISTICS OF
ZNSE:GA:P LAYERS GROWN BY MOLECULAR BEAM EPITAXY 86 K. OHKAWA, P.
BAEUME, M. FEHRER, S. STRAUF, J. GUTOWSKI, D. HOMMEL, AND G. LIPPERT 5.
POSTER I THE GROWTH AND CHARACTERIZATION OF GAN GROWN ON A Y-AL 2 O 3
/(001) SI SUBSTRATE BY METALORGANIC VAPOR PHASE EPITAXY 93 L WANG, X.
LIU, Y. ZAN, D. WANG, D. -C. LU, Z. WANG, L. CHENG, ANDZ. ZHANG SAPPHIRE
SURFACE MODIFIED BY REACTIVE ION BEAM 97 D. BYUN, H.-J. KIM, J. KIM,
S.-K. KOH, W.-K. CHOI, D. PARK, AND D.-W. KUM GROWTH OF HIGH QUALITY
ZNSE SINGLE CRYSTAL 101 Q. GU, C. FANG, J. WEI, M. LU, H. ZHUO, AND G.
LANDWEHR PREPARATIONS OF HIGHLY N-DOPED P-TYPE ZNTE AND ZNTE-ZNSE SLS
GROWN BY HWE USING ZN 3 N 2 CODOPING SOURCE 105 S. SAKAKIBARA, M.
YAMASHITA, F. TANOUE, K. ISHINO, A. ISHIDA, AND H. FUJIYASU RF-MBE
GROWTH OF CUBIC GAN ON SI (001) HAVING VERY THIN SIC LAYERS 109 Y.
HIROYAMA AND M. TAMURA INVESTIGATION OF THICKNESS DEPENDENCE OF
HEXAGONAL COMPONENT IN CUBIC GAN FILM GROWN ON GAAS (001) BY MOVPE 113
T. TAKI, A. KOUKITU, AND H. SEKI THE ANNEALING EFFECTS ON ZNCDSE/ZNSE
QUANTUM WELLS AND ZNSE/GAAS INTERFACES 117 R. -C. TU AND Y. -K. SU
TEMPERATURE-DEPENDENT STRAIN IN HIGH QUALITY ZNTE GROWN ON GAAS WITH
ZNSE/ZNTE SUPERLATTICES BUFFER LAYERS 121 R. -C. TU, Y. -K. SU, AND Y.
-S. HUANG INFLUENCE OF AS AUTODOPING AND OXYGEN CONTAMINATION ON THE
GROWTH AND PHOTOLUMINESCENCE PROPERTIES OF HALIDE VPE GROWN THICK CUBIC
GAN 125 K. SUNABA, H. TSUCHIYA, M. MINAMI, T. SUEMASU, AND F. HASEGAWA
THE EFFECT OF TWO STEP GAN GROWTH ON THE PROPERTIES OF THICK GAN BY
HYDRIDE VAPOR PHASE EPITAXY 129 J. -W. LEE, H. -S. PAEK, J. -I. LEE, J.
-B. YOO, AND D. -W. KUM EFFECTS OF BUFFER LAYERS AND GROWTH PARAMETERS
ON THE GROWTH OF THICK GAN ON SI SUBSTRATE USING VERTICAL HYDRIDE VAPOR
PHASE EPITAXY WITH GACL, 133 H. -S. PAEK, J. -W. LEE, W. -5 . YANG,
ANDJ. -B. YOO ANTIMONY DOPING OF ZNSE GROWN BY MOVPE 138 H. KALISCH, H.
HAMADEH, R. RIILAND, A. L GURSKII, I. MARKO, G. P. YABLONSKII, AND M.
HEUKEN SELF-ASSEMBLING QUANTUM DOTS OF CDSE AND ZNCDSE ON ZNSE/GAAS(100)
142 N. MATSUMURA, E. TAI, Y. KIMURA, T. SAITO, AND J. SARNIE GROWTH OF
GAN THIN FILM BY CLOSE-SPACED METHOD AT LOW TEMPERATURES 146 Y.
WATANABE, S. OHKUBO, S. TAKAHASHI, AND M. SANO DIRECT GROWTH OF GAN ON
(0001) 6H-SIC 150 T. HONDA, Y. YAMAMOTO, AND H. KAWANISHI PROPERTIES OF
UNDOPED AND DOPED GAN FILMS GROWN BY HOT WALL EPITAXY SYSTEM WITH TMG
AND GA METAL SOURCES 154 5. CHU, T. MITSUI, S. SAKAKIBARA, F. TANOUE, K.
ISHINO, A. ISHIDA, K. AIKI, AND H. FUJIYASU GROWTH AND CHARACTERIZATION
OF GAN ON LIGAO 2 AND LIALO 2 158 5. DUAN, X. TENG, P. HAN, AND D.-C. LU
MOCVD GROWTH OF GAN ON GROOVED ALGAN/GAN LAYERS FOR INNER STRIPE LASERS
162 5. NAKAMURA, M. ISHIDA, T. HASHIMOTO, M. ORITA, O. IMAFUJI, M. YURI,
T. SUGINO, AND K. ITOH THERMAL CLEANING TREATMENT OF SAPPHIRE SUBSTRATE
SURFACE AND ITS EFFECTS ON THE GROWTH OF GAN 166 G. M. YANG, J. -H. KIM,
K. S. KIM, K. J. LEE, S. C. CHOI, J. Y. CHOI, C. S. OH, C. -H. HONG, K.
Y. LIM, AND H. J. LEE INGAN SELECTIVE MOCVD GROWTH AND POLYCRYSTALLINE
FORMATION ON SIO 2 -PATTERNED SAPPHIRE SUBSTRATES 170 A. INOUE, T.
SAKAGUCHI, Y. MORIGUCHI, M. IWATA, T. MIYAMOTO, F. KOYAMA, AND K. IGA
VERY STRONG PHOTOLUMINESCENCE FROM POLYCRYSTALLINE GAN GROWN ON
C-ORIENTED ZNO/SI SUBSTRATE BY ECR-MBE 174 H. TOCHISHITA, N. MURATA, A.
YABE, Y. SHIMIZU, Y. NANISHI, AND M. KADOTA EFFECTS OF SUBSTRATE
NITRIDATION AND A1N BUFFER LAYER ON THE PROPERTIES OF GAN ON SAPPHIRE
178 T. HO, H. TESHIGAWARA, K. OHTSUKA, K. KUWAHARA, M. SUMIYA, Y.
TAKANO, AND S. FUKE METALORGANIC MOLECULAR BEAM EPITAXY GROWTH OF
WURTZITE GALLIUM NITRIDE THIN FILMS: THE OBSERVATION OF ROOM-TEMPERATURE
PHOTOLUMINESCENCE 182 M. -H. KIM, S. -N. LEE, ANDS. -J. PARK GROWTH OF
CUBIC ALGAN EPILAYERS ON CUBIC A1N BUFFER LAYER BY RF-PLASMA ASSISTED
MBE 186 T. KOIZUMI, H. OKUMURA, K. BALAKRSHINAN, Y. ISHIDA, T. NAGATOMO,
AND S. YOSHIDA GROWTH OF GAN ON NDGAO 3 SUBSTRATE BY HYDRIDE VAPOR PHASE
EPITAXY 190 A. WAKAHARA, T. YAMAMOTO, K. KAWANO, A. YOSHIDA, Y. SEKI,
AND O. ODA ETCHING OF GAN BY INDUCTIVELY COUPLED PLASMA USING CL/H 2 194
J. -M. LEE, H. -G. KIM, ANDS. -J. PARK GROWTH OF GAN ON MOS 2 LAYERED
COMPOUND 198 A. YAMADA, K. P. HO, T. AKAOGI, T. MARUYAMA, AND K. AKIMOTO
TEMPERATURE DEPENDENCE OF THE PHOTOLUMINESCENCE DECAY TIME IN THIN GAN
LAYERS ON 6H-SIC(0001) 202 H. GRAHN, J. RINGLING, O. BRANDT, B. YANG, K.
PLOOG, J. OFF, AND F. SCHOLZ XI EFFECT OF ELECTRON IRRADIATION ON
OPTICAL PROPERTIES OF GALLIUM NITRIDE 206 /. A. BUYANOVA, MT. WAGNER, W.
M. CHEN, J. L LINDSTROM, B. MONEMAR, H. AMANO, AND I. AKASAKI TIME
RESOLVED PHOTOLUMINESCENCE STUDY OF THE RECOMBINATION IN INGAN/GAN MULTI
QUANTUM WELL STRUCTURES 210 B. MONEMAR, J. P. BERGMAN, N. SAKSULV, G.
POZINA, H. AMANO, AND I. AKASAKI MICROSPECTROSCOPY OF EXCITONIC
LUMINESCENCE AND OPTICAL REFLECTION ON MGS/ZNSE SUPERLATTICES 214 H.
KUMANO, H. NASHIKI, H. SUZUKI, K. UESUGI, AND I. SUEMUNE ELECTRICAL
PROPERTIES AND GROWTH OPTIMIZATION OF P-BETE EPILAYERS AS A CONTACT
LAYER OF II-VI BLUE-GREEN LASER 218 5. SAEKI, M. W. CHO, S. WANG, AND T.
YAO OHMIC CONTACTS TOP-GAN USING PT/NI/AU AND NI/PT/AU METALLIZATION
SCHEMES 222 J. -S. JANG, I. -S. CHANG, T. -Y. SEONG, AND S. -J. PARK
INTERFACIAL REACTIONS BETWEEN TI, AL, OR TI/AL METALLIZATION SCHEMES AND
N-GAN 226 H. K. KIM, J. S. JANG, I. S. CHANG, T. -Y. SEONG, S. LEE, AND
S. -J. PARK STUDY OF THIN TI INTERLAYER IN AU CONTACT ON N-GAN USING
SYNCHROTRON-RADIATION PHOTOEMISSION SPECTROSCOPY 230 5. -N. LEE, M. -H.
KIM, C. HUH, S. -Y. PARK, J. Y. HAN, J. M. SEO, ANDS. -J. PARK OPTICAL
PROPERTIES OF ZNSE/ZNMGBESE QWS 234 K. GODO, M. W. CHO, J. H. CHANGE, H.
MAKINO, AND T. YAO OPTICAL PROPERTIES OF CDSE/ZNSE STRAINED LAYER
SUPERLATTICES GROWN ON INP 238 K NABETANI, I. ISHIBE, K. SUGIYAMA, T.
KATO, AND T. MATSUMOTO DISTRIBUTION OF IN ATOMS IN IN^! N STUDIED BY
EXTENDED X-RAY ABSORPTION FINE STRUCTURE ANALYSIS 242 S. MORISHIMA, H.
SASAKI, S. ENDO, T. MARUYAMA, K. AKIMOTO, Y. KITAJIMA, AND M. NOMURA
INGAN PHASE SEPARATION IN INGAN MULTIPLE QUANTUM WELLS: A NECESSITY FOR
HIGH- BRIGHTNESS BLUE AND GREEN LEDS 246 C. A. TRAN, R. F. KARLICEK JR.,
M. SCHURMAN, V. MERAI, A. OSINSKY, Y. LI, I. ELIASHEVICH, M.G. BROWN, J.
NERING, T. DICARLO, I. FERGUSON, AND R. STALL LUMINESCENCE PROPERTIES OF
DENSE EXCITONIC SYSTEMS IN ZNSE-BASED QUANTUM WELLS 250 M. FUJIMOTO, H.
SHIGEMATSU, K. SENDA, Y. YAMADA, T. TAGUCHI, F. SASAKI, AND S. KOBAYASHI
DYNAMICS OF VERTICAL TRANSPORT OF PHOTOEXCITED CARRIERS IN
CD(ZN)SE/ZN(S)SE SHORT-PERIOD SUPERLATTICES 254 A. A. TOROPOV, T. V.
SHUBINA, A. V. LEBEDEV, S. V SOROKIN, S. V. IVANOV, G. R. POZINA, J. P.
BERGMAN, AND B. MONEMAR ~330NM INTENSE EMISSION FROM SI-DOPED AL 011 GA
089 N/AL 024 GA 07( N MULTI-QUANTUM-WELL STRUCTURES 258 H. HIRAYAMA AND
Y. AOYAGI CATHODOLUMINESCENCE INVESTIGATIONS OF SI-AND MG-DOPED GAN
FILMS ON SAPPHIRE 262 C. -H. HONG, M. YANG, Y-H. CHOI, T. -K. YOO, AND
Y. -H. LEE PHOTOLUMINESCENCE PROPERTIES OF SM DOPED ZNSSE/ZNS MQW GROWN
BY MBE 266 H. YAMADA, T. MARUYAMA, AND K. AKIMOTO EFFECTS OF RESIDUAL
STRAIN ON OPTICAL AND STRUCTURAL PROPERTIES OF ZNS EPITAXIAL LAYERS
GROWN ON GAAS SUBSTRATES 270 5. NAKAMURA, C. SASAKI, T. SAKASHITA, Y.
YAMADA, T. TAGUCHI, AND T. YOKOGAWA XU OPTICAL ANISOTROPIC DIELECTRIC
RESPONSE OF GAN STUDIED BY GENERALIZED VARIABLE ANGLE SPECTROSCOPIC
ELLIPSOMETRY 274 H. YAO, C. H. YAN, J. M. VAN HOVE, A. M. WOWCHAK, P. P.
CHOW, S. P. DENBAARS, ANDJ. M. ZAVADA EXCITONIC STRUCTURE AND SPATIALLY
INDIRECT RECOMBINATION IN MOCVD-GROWN GAN/AKJA, JSF HETEROSTRUCTURES 276
M. KUNZER, U. KAUFMANN, M. MAIER, AND H. OBLOH MACRO-DEFECTS IN
ALGAN/GAN HETEROSTRUCTURE 280 G. Y. ZHANG, J. Q. QU, J. LI, X. J. MAO,
ANDZ. J. YANG280 POLE FIGURE STUDY OF CUBIC PHASE IN HEXAGONAL GAN THIN
FILM 284 H. ZHANG AND G. Y. ZHANG RADIATIVE AND NON-RADIATIVE
RECOMBINATION PROCESSES IN ULTRA-VIOLET INGAN LIGHT EMITTING DIODES 288
Y. NARUKAWA, S. SAIJOU, Y. KAWAKAMI, SG. FUJITA, T. MUKAI, AND S.
NAKAMURA ATOMIC STRUCTURE AND STRAIN IN INGAN ALLOY CALCULATED USING A
VALENCE-FORCE-FIELD METHOD 292 T. SAITO AND Y. ARAKAWA
MAGNETOLUMINESCENCE CHARACTERIZATION OF THE LO-PHONON-REPLICATED 2.67EV
BAND IN AN IN 02 GA 08 N EPITAXIAL LAYER OF THE SQW BLUE LED 296 H.
KUDO, T. TAMURA, C. ONODERA, S. KURAI, Y. YAMADA, AND T. TAGUCHI
TIME-RESOLVED BANDGAP RENORMALIZATION AND GAIN IN GAN EPILAYERS 300 5.
HESS, R. A. TAYLOR, J. F. RYAN, B. BEAUMONT, P. GILBERT, N. J. CAIN, V
ROBERTS, ANDJ. S. ROBERTS STRONG INFLUENCE OF SIO 2 THIN LAYER ON
PROPERTIES OF GAN EPILAYERS 304 X. C. WANG, S. J. XU, S. J. CHUA, K. LI,
Z. H. ZHANG, X. ZHANG, AND K. B. CHONG QUANTUM CHEMICAL STUDIES OF
PARASITIC REACTION BETWEEN TMA AND NH 3 (LATE NEWS) 308 A. TACHIBANA, K.
NAKAMURA, O. MAKINO, H. TOKUNAGA, N. AKUTSU, AND K. MATSUMOTO HIGH
QUALITY INGAN FILMS AND IN^GA,^N/IN^GA, JN MULTI-LAYERS GROWN BY HWE
MIXED SOURCE METHOD (LATE NEWS) 310 S. CHU, T. SAISHO, K. FUJIMURA, S.
SAKAKIBRA, F. TANOUE, K. ISHINO, A. ISHIDA, AND H. FUJIYASU RAMAN
STUDIES ON TO AND LO PHONON MODES IN CUBIC ALGAN ALLOY (LATE NEWS) 312
H. HARIMA, T. INOUE, S. NAKASHIMA, H. OKUMURA, Y. ISHIDA, S. YOSHIDA, T.
KOIZUMI, H. GRILLE, AND F. BECHSTEDT A GAP L N X EPILAYER WITH LARGE
CRITICAL THICKNESS AND FEW CRYSTALLINE DEFECTS GROWN ON SI (100)
SUBSTRATE (LATE NEWS) 31 4 K. SAMONJI, H. YONEZU, K. OJIMA, Y. FUJIMOTO,
AND N. OHSHIMA RECOMBINATION MECHANISM AND THE STRUCTURE OF CENTRES OF
ZNSE HIGH-TEMPERATURE BLUE LUMINESCENCE (LATE NEWS) 316 G. N. IVANOVO,
V. A. KASIYAN, D. D. NEDEOGLO, N. D. NEDEOGLO, AND A. V. SIMASHKEVICH 6.
CHARACTERIZATION I COMPOSITION AND STRAIN FLUCTUATIONS IN INN/GAN/AIN
HETEROSTRUCTURES: A MICROSCOPIC GLIMPSE BELOW SURFACES (INVITED) 321 C.
KISIELOWSKI32I NONDESTRUCTIVE DEFECT CHARACTERIZATION OF ZNSE BASED
LASER DIODES AND GAN LAYERS BY HIGH RESOLUTION X-RAY DIFFRACTION 327 H.
HEINKE, V. GROSSMANN, M. BEHRINGER, V. KIRCHNER, AND D. HOMMEL XUI
ESTIMATION OF HEXAGONAL GAN INCLUDED IN NOMINALLY CUBIC GAN BY CO SCAN
XRD METHOD: COMPARISON WITH THE POLE FIGURE METHOD FOR GAN LAYERS GROWN
WITH DIFFERENT GROWTH METHODS AND CONDITIONS 331 5. YONEMURA, M. SAKAI,
H. TSUCHIYA, T. SUEMASU, AND F. HASEGAWA STRUCTURE, LUMINESCENCE AND
LATTICE HARDENING OF BE-RICH ZN^BE^SE BULK CRYSTALS 335 F. FIRSZT, S.
-LEGOWSKI, H. MECZYNSKA, J. SZATKOWSKI, W. PASZKOWICZ, K. GODWOD, J.
DOMAGAIA, M. KOZIELSKI, M. SZYBOWICZ, AND M. MARCZAK CAICISS ANALYSIS OF
GAN FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOCVD METHOD 339 M. SUMIYA, T.
OHNISHI, H. TESHIGAWARA, M. TANAKA, I. OHKUBO, M. KAWASAKI, M.
YOSHIMOTO, K. OHTSUKA, H. KOINUMA, AND S. FUKE 7. CHARACTERIZATION II ON
THE DOMINANT MECHANISM FOR THE RESIDUAL N-TYPE CONDUCTIVITY IN GAN: IS
SUBSTITUTIONAL O N DONOR RESPONSIBLE? 345 W. M. CHEN, I. A. BUYANOVA,
MT. WAGNER, B. MONEMAR, J. L. LINDSTRB M, H. AMANO, AND I. AKASAKI
TERMINATING STRUCTURE OF MBE GROWN GAN{0001} FILM SURFACE IDENTIFIED BY
COAXIAL IMPACT COLLISION ION SCATTERING SPECTROSCOPY 349 5. SHIMIZU, Y.
SUZUKI, T. NISHIHARA, S. HAYASHI, AND M. SHINOHARA MEASUREMENT OF THE
CRITICAL THICKNESS OF ZNCDSE QUANTUM WELLS USING THE PIEZOELECTRIC
EFFECT 353 C. MORHAIN, J. S. MILNES, S. A. TELFER, B. URBASZEK, I.
GALBRAITH, K. A. PRIOR, AND B. C. CAVENETT OPTICAL INVESTIGATION OF THE
HIGH QUALITY INGAN/GAN MQW BY MOCVD WITH THREE LAYER LAMINAR FLOW GAS
INJECTION 357 T. WANG, T. SUGAHARA, S. SAKAI, ANDJ. ORION ANALYSIS OF
CL-DOPED ZNSETE USING EXAFS, RBS AND PIXE 361 T. MARUYAMA, T. HASEGAWA,
N. KOMURO, H. YAMADA, W. OHTSUKA, K. AKIMOTO, Y. KITAJIMA, E. YAGI, AND
K. MAEDA SRPES STUDY OF GAAS INTERLAYERS FOR P-GAN CONTACTS 365 K.
HORIBA, K. ONO, H. FUJIOKA, M. OSHIMA, H. MIKI, A. FUKIZAWA, M. OKUYAMA,
AND Y. WATANABE 8. BLUE LASERS ON A WONDERFUL PARADE I
INGAN/GAN/ALGAN-BASED VIOLET LASER DIODES WITH A LIFETIME OF MORE
THANLO.OOO HOURS (INVITED) 371 5. NAKAMURA, M. SENOH, S. NAGAHAMA, N.
IWASA, T. MATSUSHITA, AND T. MUKAI CW ROOM TEMPERATURE OPERATION OF
HOMOEPITAXIAL ZNSE LASER DIODES 377 H. WENISCH, D. HOMMEL, M. FEHRER, V.
GROSSMANN, H. HEINKE, M. KLUDE, A. ISEMANN, K. OHKAWA, AND H. SELKE
IMPROVED PROPERTIES OF INGAN MULTIPLE QUANTUM WELL PURPLISH-BLUE LASER
DIODES BY SI-DOPING IN THE INGAN BARRIERS 381 5. CHICHIBU, D. COHEN, M.
MACK, A. ABARE, P. KOZODOY, M. MINSKY, S. FLEISCHER, S. KELLER, J.
BOWERS, U. MISHRA, L COLDREN, D. CLARKE, AND S. P. DENBAARS ZNSE-BASED
BLUE/GREEN LASER DIODES GROWN BY MBE ON CONDUCTIVE ZNSE SUBSTRATES 385
H. DOI, T. MATSUOKA, F. NAKANISHI, N. OKUDA, T. YAMADA, K. KATAYAMA, H.
YAO, A. SAEGUSA, H. MATSUBARA, M. IRIKURA, K. KIMURA, T. TAKEBE, S.
NISHINE, AND T. SHIRAKAWA STIMULATED EMISSION AND LASING IN GALNN/GAN
HETEROSTRUCTURES GROWN BY MOVPE 389 G. P. YABLONSKII, E. V. LUTSENKO, I.
P. MARKO, O. SCHON, M. HEUKEN, B. SCHINELLER, A. GUTTZEIT, M.
SCHWAMBERA, L. P. HUEI, AND K. HEIME XIV 9. BLUE LASERS ON A WONDERFUL
PARADE II DEGRADATION MODEL FOR II-VI COMPOUND SEMICONDUCTOR LASERS
(INVITED) 395 K. NAKANO LASER DIODES BASED ON BERYLLIUM CONTAINING II-VI
SEMICONDUCTORS 401 A. WAAG, H. -J. LUGAUER, M. KEIM, G. REUSCHER, P.
GRABS, G. LANDWEHR, S. IVANOV, T. SHUBINA, A. TOROPOV, N. IL INSKAYA, P.
KOP EV, ANDZH. ALFEROV POOR HOLE INJECTION INTO THE ACTIVE LAYER IN AN
INGAN/GAN/ALGAN MULTI-QUANTUM WELL LASER DIODE 405 K. DOMEN, R. SOEJIMA,
A. KURAMATA, K. HORINO, S. KUBOTA, AND T. TANAHASHI BURIED RIDGE
WAVEGUIDE LASER DIODES BASED ON BE-CHALCOGENIDES 409 M. LEGGE, S. BADER,
G. BACHER, H.-J. LUGAUER, A. WAAG, A. FORCHEL, AND G. LANDWEHR GHOST
MODES AND THEIR SIGNATURE IN INGAN DIODE LASER SPECTRA 413 P. G.
ELISEEV, G. A. SMOLYAKOV, AND M. OSINSKI 10. BLUE LASERS ON A WONDERFUL
PARADE III ZNSE-BASED LASERS WITH ACDSE FRACTIONAL-MONOLAYER ACTIVE
REGION (INVITED) 419 5. IVANOV, A. TOROPOV, S. SOROKIN, T. SHUBINA, I.
SEDOVA, P. KOP EV, ZH. ALFEROV, A. WAAG, H. -J. LUGAUER, G. REUSCHER, M.
KEIM, AND G. LANDWEHR LATERAL INDEX GUIDED ZNCDSE-BASED LASERS BY
SELECTIVE IMPLANTATION-INDUCED QUANTUM WELL DISORDERING 425 M.
STRAFIBURG, M. KUTTLER, U. W. POHL, D. BIMBERG, M. BEHRINGER, AND D.
HOMMEL OPTIMIZED CONTACT STRUCTURE FOR II-VI LASER DIODE 429 S. KIJIMA,
H. OKUYAMA, Y. SANAKA, T. KOBAYASHI, S. TOMIYA, AND A. ISHIBASHI ROLE OF
GROWTH INITIATION FOR HIGH-BRIGHTNESS GAN-BASED LIGHT EMITTING DIODES
433 R. S. KERN, W. GOTZ, C. H. CHEN, H. LIU, D. A. STEIGERWALD, P. S.
MARTIN, S. RUDAZ, G. L. CHRISTENSON, C. P. KUO, AND R. M. FLETCHER
MGZNSETE/ZNCDSE/MGZNCDSE DOUBLE HETEROSTRUCTURE LIGHT-EMITTING DIODES
437 H. IWATA, K. NANIWAE, AND K. YASHIKI CONTINUOUS-WAVE OPERATION AT
15C OF INGAN MULTI-QUANTUM-WELL-STRUCTURE LASER DIODES ON SIC SUBSTRATE
WITH VERTICAL CONDUCTING STRUCTURE (LATE NEWS) 441 S. KUBOTA, A.
KURAMATA, R. SOEJIMA, K. DOMEN, K. HORINO, AND T. TANAHASHI DISLOCATION
FREE ALGAN/GAN MQW GROWN ON GAN SUBSTRATES BY MBE (LATE NEWS) 443 5.
POROWSKI, I. GRZEGORY, M. BOCKOWSKI, M. LESZCZYNSKI, D. KORAKAKIS, A.
BELL, I. HARRISON, C. T. FOXON, M. ALBRECHT, H. P. STRUNK, J. A.
DAVIDSON, AND P. DAWSON ENHANCEMENT OF PHOTOLUMINESCENCE INTENSITY BY
IN-DOPING IN GAN GSMBE (LATE NEWS) 445 X. -Q. SHEN AND Y. AOYAGI 11.
POSTER II GROWTH AND CHARACTERIZATION OF GAN/INGAN LEDS USING LARGE
SCALE PRODUCTION REACTORS 449 M. BREMSER, H. PROTZMANN, B. WACHTENDORF,
O. SCHOEN, M. SCHWAMBERA, B. SCHINELLER, M. HEUKEN, E. WOELK, D.
SCHMITZ, AND H. JUERGENSEN AN ELUCIDATION OF SOLID INCORPORATION OF
INGAN GROWN BY METALORGANIC VAPOR PHASE EPITAXY 453 J. OU, H. -C. LIN, Y
-C. PAN, C. -K. SHU, W -K. CHEN, AND M. C LEE XV GAN BASED
LASER-STRUCTURES ON SAPPHIRE SUBSTRATES USING SINGLE CRYSTALLINE AIN
BUFFER LAYERS 457 Y. OHBA AND H. YOSHIDA MOCVD GROWTH OF INGAN QUANTUM
WELLS ON GAN/ALGAN QUARTER-WAVE REFLECTORS 460 T. SOMEYA, Y. ARAKAWA, J.
LEE, AND T. KAMIYA PHOTOLUMINESCENCE PROPERTIES OF ZN, JVLG^SE ON TILTED
GAAS SUBSTRATES BY MOLECULAR BEAM EPITAXY 464 R. -C. TU AND Y. -K. SU
OPTICAL CHARACTERIZATION OF A ZN 0GG MG 012 S 01G SE 0G2 EPILAYER ON
GAAS 468 R. -C. TU, Y. -S. HUANG, AND Y. -K. SU GROWTH OF
POLYCRYSTALLINE GAN THIN FILM ON INDIUM TIN OXIDE/GLASS SUBSTRATE WITH
ELIMINATED ION DAMAGE BY RF PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
472 D.-C. PARK, H.-C. KO, SZ, FUJITA, ANDSG. FUJITA MOCVD GROWTH OF AIN,
GAN/SI USING AN N-ATOM SOURCE BASED ON A DIELECTRIC BARRIER DISCHARGED
METHOD 476 J. -S. KIM, D. -W. KUM, ANDJ. -W. LEE LATERAL POTENTIAL
MODULATION BY STRAIN DISTRIBUTION IN SINGLE QUANTUM WELL GROWN ON
VICINAL SUBSTRATE -AN APPROACH TO LOW DIMENSIONAL QUANTUM STRUCTURE- 480
Y. NABETANI, T. KATO, AND T. MATSUMOTO FABRICATION OF ZNSE-BASED LASER
DIODE STRUCTURES BY MOVPE WITH AN IMPROVED ANNEALING TECHNIQUE 484 IV.
NISHIYAMA, S. TAMURA, Z. G. PENG, SZ. FUJITA, AND SG. FUJITA LARGE-ANGLE
GRADUAL TILTING OF CRYSTALLOGRAPHIC ORIENTATIONS OF HVPE-GAN SELECTIVELY
GROWN ON MOVPE-GAN 488 K. TSUKAMOTO, W. TAKI, N. KUWANO, K. OKI, T.
SHIBATA, N. SAWAKI, AND K. HIRAMATSU A STUDY ON INITIAL NUCLEATION USING
AN ULTRA THIN AMORPHOUS BUFFER LAYER FOR THE GROWTH OF GAN ON ALO 3
(0001) BY MOLECULAR BEAM EPITAXY 492 R. KIMURA, K. TAKAHASHI, A. W. JIA,
M. KOBAYASHI, AND A. YOSHIKAWA MOLECULAR BEAM EPITAXY GROWTH OF
(ZNMG)(SETE) FOR THE APPLICATION OF GREEN LIGHT EMITTERS 496 J. -H.
CHANG, M. -W. CHO, H. MAKINO, T. SEKIGUCHI, AND T. YAO ELECTRON BEAM
EXPOSURE AND EPITAXY OF ZNO FILMS ON(LLL)CAF 2 500 H. J. KO, Y. F. CHEN,
Z. ZHU, J. M. KO, T. FUKUDA, AND T. YAO EFFECT OF V/III SOURCE-SUPPLY
RATIO ON THE CRYSTALLINE-STRUCTURE QUALITY OF THE CUBIC GAN EPILAYER
GROWN ON (001) GAAS BY MBE 504 Z. X. QIN, A. W. JIA, M. KOBAYASHI, M.
SHIMOTOMAI, Y. KATO, A. YOSHIKAWA, AND K. TAKAHASHI STUDY ON THE INITIAL
GROWTH STAGE OF DEVICE-QUALITY CUBIC GAN ON (001) GAAS BY RHEED AND AFM:
THE NITRIDATION AND BUFFER-LAYER DEPOSITION PROCESSES IN MBE 508 H.
HAYASHI, A. HAYASHIDA, Y. SUGURE, Z. X. QIN, A. W. JIA, M. KOBAYASHI, M.
SHIMOTOMAI, Y. KATO, A. YOSHIKAWA, AND K. TAKAHASHI LOW TEMPERATURE
MOVPE GROWTH AND CHARACTERIZATION OF ZNS USING DIETHYLDISULPHIDE AS
SULPHUR PRECURSOR 512 P. PRETE, N. LOVERGINE, M. MAZZER, G. MELE, C.
ZANOTTI-FREGONARA, G. VASAPOLLO, AND A. M. MANCINI ELECTRICAL, OPTICAL
PROPERTIES AND SURFACE MORPHOLOGY OF ZNSE THIN FILM GROWN BY ULTRASONIC
SPRAY PYROLYSIS METHOD 516 M. C. BAYKUL, S. KOSE, AND V. BILGIN XVI
EFFECT OF INITIAL PROCESS IN FORMATION OF GRAIN STRUCTURE IN GAN GROWTH
BY MBE 520 H. SASAMOTO, K. KUSHI, S. NAKAMURA, D. SUGIHARA, A. KIKUCHI,
AND K. KISHINO PLASMA PRETREATMENT OF GAAS SUBSTRATES AND ECR-PAMOCVD OF
CUBIC GAN 524 B. GU, Y. XU, F. QIN, AND S. WANG TEMPERATURE DEPENDENT
GAIN CHARACTERISTICS OF ZNSE BASED SEPARATE-CONFINEMENT- HETEROSTRUCTURE
LASERS WITH BINARY WELLS 528 P. MICHLER, M. F. PEREIRA JR., O. HOMBURG,
L. NERGER, J. GUTOWSKI, H. WENISCH, AND D. HOMMEL OPTICALLY-PUMPED
LASING OF MOVPE GROWN ZNSE/ZNMGSSE HETEROSTRUCTURES AT HIGH TEMPERATURES
532 G. P. YABLONSKII, I. P. MARKO, E. V. LUTSENKO, A. L. GURSKII, M.
HEUKEN, H. KALISCH, H. HAMADEH, M. LUNENBURGER, AND K. HEIME ZNO
EXCITONIC LASERS - THE FUTURE OF SHORT WAVELENGTH EMISSION? 536 D. M.
BAGNALL, Y. CHEN, H. -J. KO, Z. ZHU, M. Y. SHEN, T GOTO, AND T. YAO THE
EFFECT OF DIODE AREA ON THE LUMINESCENCE OF INGAN QUANTUM WELL LIGHT
EMITTING DIODES GROWN BY MOCVD 540 M. HANSEN, P. KOZODOY, S. KELLER, U.
MISHRA, J. SPECK, AND S. P. DENBAARS STIMULATED EMISSION AND OPTICAL
GAIN OF INGAN HETEROSTRUCTURES GROWN BY MOVPE PRODUCTION SCALE REACTORS
544 J. HOIST, A. HOFFMANN, M. HEUKEN, M. SCHWAMBERA, AND O. SCHON
ACCELERATED LIFE TESTING OF GAN/INGAN/ALGAN BLUE LIGHT-EMITTING DIODES
AND HIGH TEMPERATURE FAILURE MECHANISM 548 M. OSINSKI AND D. L. BARTON
GAN PHOSPHORS FOR FIELD EMISSION DISPLAYS 552 H. KANIE, T. KAWANO, AND
H. KOAMI EFFECT OF TWO-STEP RAPID THERMAL ANNEALING PROCESS ON MG-DOPED
P-TYPE GAN FILM GROWN BY THE METALORGANIC CHEMICAL VAPOR DEPOSITION 556
K. -S. AHN, D. -J. KIM, Y. -T. MOON, H. -G. KIM, AND S. -J. PARK YELLOW
LUMINESCENCE MECHANISM AND PERSISTENT PHOTOCONDUCTIVITY IN N-GAN SINGLE
CRISTAL FILMS GROWN ON A-ALO 3 (0001) SUBSTRATES BY LP-MOCVD 560 L.
WANG, G. YUE, X. LIU, X. WANG, C. WANG, D. WANG, D. LU, ANDZ. WANG
CHARACTERIZATION OF CUBIC GAN GROWN ON VERY THIN SIC-COATED (001) SI 564
M. TAMURA AND Y. HIROYAMA BLUE DIODES BASED ON SEMICONDUCTOR-ELECTROLYTE
INTERFACE 568 J. PANOSSIAN, E. HOVHANNISSIAN, AND Y. YENGIBARIAN
INTRINSIC POINT DEFECTS IN GAN LAYERS INDUCED BY ION IMPLANTATION 570 M.
RAMSTEINER, H. KOSTIAL, Z. B. XIAO, K. H. PLOOG, E. NEBAUER, J. WIIRFL,
H. TEWS, AND H. RIECHERT DONOR-ACCEPTOR-PAIR RECOMBINATION FOR IMPURITY
IDENTIFICATION AND ANALYSIS OF CUBIC INCLUSIONS IN MG- AND C-DOPED MBE
GROWN HEXAGONAL GAN 574 S. STRAUF, P. MICHLER, J. GUTOWSKI, U. BIRKLE,
S. EINFELDT, V. KIRCHNER, H. HEINKE, AND D. HOMMEL ANALYSIS OF
ZNSE/CDSE-BASED QD STRUCTURES AS A BASIS FOR THE CREATION OF LONG-LIVING
BLUE-GREEN LASER 578 A. D. ANDREEV, R. P. SEISYAN, R. M. DATSIEV, O.
COSCHUNG-TOATES, AND S. V. IVANOV XVU TEMPERATURE DEPENDENT RESIDUAL
STRAIN IN ZNSE EPILAYERS GROWN ON GAAS 582 T. ABE, M. ASHIYA, H.
ISHIKURA, Y. OKUNO, H. KASADA, AND K. ANDO TIME-RESOLVED SPECTROSCOPY OF
INGA^N/GAN MULTIPLE QUANTUM WELLS AT ROOM TEMPERATURE 586 M. POPHRISTIC,
F. H. LONG, C. TRAN, R. F. KARLICEKJR., Z. -C. FENG, AND I. T. FERGUSON
RECOMBINATION ACTIVITY OF DISLOCATIONS AND STACKING FAULTS IN GAN 588 Y.
T. REBANE AND Y. G. SHRETER NONRADIATIVE ELECTRON-HOLE RECOMBINATION IN
P- AND N-TYPE ZNSE EPITAXIAL LAYERS EXAMINED BY PIEZOELECTRIC
PHOTOACOUSTIC SPECTROSCOPY 592 K. YOSHINO, Y. NAKAGAWA, A. FUKUYAMA, K.
MAEDA, H. ISHIKURA, T. ABE, K. ANDO, M. YONETA, H. SAITO, M. OHISHI, AND
T. IKARI ULTRAVIOLET EXCITONIC PHOTOLUMINESCENCE FROM CUALS 2
HETEROEPITAXIAL FILMS GROWN BY METALORGANIC VAPOR PHASE EPITAXY 596 S.
CHICHIBU, S. SHIRAKATA, M. SUGIYAMA, AND H. NAKANISHI BAND GAP OF GA T
^ N AND GAJ ^AL^N ALLOYS AS A FUNCTION OF COMPOSITION 600 S. K. PUGH, S.
BRAND, R. A. ABRAM, ANDD. J. DUGDALE EXCITON LOCALIZATION IN INGAN
QUANTUM WELLS GROWN ON LATERAL EPITAXIALLY OVERGROWN (LEO) GAN 604 S.
CHICHIBU, H. MARCHAND, S. KELLER, P. FINI, J. IBBETSON, M. MINSKY, S.
FLEISCHER, J. SPECK, J. BOWERS, E. HU, U. MISHRA, S. P. DENBAARS, T.
DEGUCHI, T. SOTA, AND S. NAKAMURA SPIN-FLIP RAMAN SCATTERING STUDIES OF
THE COMPENSATING DONOR CENTRE IN NITROGEN-DOPED ZNS^SE,^ 608 K. OGATA,
D. WOLVERSON, J. J. DAVIES, SZ. FUJITA, AND SG. FUJITA BLUE UPCONVERSION
EMISSION FROM TM 3+ ION DOPED INTO GLASS CERAMICS UNDER INFRARED LIGHT
(1.06NM) EXCITATION 612 W. XU, S. HUANG, X. KONG, W. QIN, B. CHEN, J.
LIU, D. LI, AND S. LU EFFECTIVE BANDGAP SEPARATION IN INGAN EPILAYERS
GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION 616 S. CHICHIBU, L.
SUGIURA, J. NISHIO, A. SETOGUCHI, H. NAKANISHI, AND K. ITAYA POLARITY
DETERMINATION OF GAN THIN FILMS BY X-RAY STANDING WAVE METHOD 620 T.
YASOSHIMA, T. KOYAMA, K. AKIMOTO, A. ICHIMIYA, C. SASAOKA, AND A. USUI
VARIABLE HIGH CONDUCTIVITY IN HOMOGENEOUSLY IODINE DOPED ZNSE BULK
SUBSTRATES WITH SIMULTANEOUS HIGH CRYSTALLOGRAPHIC PERFECTION 624 M.
PROKESCH, U. RINAS, AND H. HARTMANN MICRO-RAMAN SCATTERING STUDY OF
INTERNAL STRAIN RELAXATION IN POST-GROWTH PATTERNED GAN FILM GROWN ON
SAPPHIRE SUBSTRATE 628 Y. HAYASHI, H. ISHIKAWA, T. EGAWA, T. SOGA, T.
JIMBO, AND M. UMENO STRAIN AND MORPHOLOGY OF GALNN/GAN QUANTUM WELLS
GROWN BY MOVPE 632 F. SCHOLZ, J. OFF, A. KNIEST, ANDH. LAKNER STRUCTURAL
PROPERTIES OF MBE GROWN HEXAGONAL GAN AND THEIR INFLUENCE ON ELECTRICAL
CHARACTERISTICS 634 K. BALAKRISHNAN, H. OKUMURA, AND S. YOSHIDA
HIGH-TRANSPARENCY NI/AU OHMIC CONTACT TO P-TYPE GAN 638 / SHEU, Y. SU,
G. CHI, M. JOU, C. CHANG, C. LIU, AND W. HUNG XVLLL PHOTO-CALORIMETRIC
STUDY OF UNDOPED GAN EPILAYERS 642 H. SASAKI, S. MORISHIMA, T. MARUYAMA,
AND K. AKIMOTO PIEZOELECTRIC FIELD INDUCED TRANSITIONS IN GALNN/GAN
MULTIPLE QUANTUM WELLS 646 C. WETZEL, T. TAKEUCHI, S. YAMAGUCHI, H.
KATOH, H. AMANO, AND I. AKASAKI ANALYSIS OF OPTICAL GAIN SPECTRA IN
INGAN/GAN QUANTUM WELLS WITH THE COMPOSITIONAL FLUCTUATIONS 650 T.
UENOYAMA GROWTH OF FREESTANDING GAN BY HVPE USING AN AIN BUFFER LAYER
DEPOSITED SI (LATE NEWS) 654 S. T. KIM, S. H. CHUNG, AND D. C. MOON
CHARASTERISTICS OF 3.42 EV EMISSION BANDS IN GAN GROWN BY HVPE ON SI
(LATE NEWS) 656 S. T. KIM, S. H. CHUNG, AND D. C. MOON SPONTANEOUS
POLARIZATION FIELDS IN III-V NITRIDE NANOSTRUCTURES (LATE NEWS) 658 F.
MELONI, F. BERNARDINI, AND V. FIORENTINI NITRIDE COMPOUNDS AS A PHOTONIC
CRYSTALS IN THE OPTICAL REGION (LATE NEWS) 660 R. MOUSSA, H. AOURAG, J.
P. DUFOUR, AND M. CERTIER 12. OPTICAL PROPERTIES & DEVICES I MECHANISM
FOR RADIATIVE RECOMBINATION IN IN 0 |5 GA (LG5 N/GAN MULTI QUANTUM WELL
STRUCTURES 665 B. MONEMAR, J. P. BERGMAN, J. DALFORS, P. O. HOLTZ, H.
AMANO, AND I. AKASAKI GROWTH AND CHARACTERIZATION OF A P-N JUNCTION
DIODE MADE OF CUBIC GAN 669 H. TANAKA AND A. NAKADAIRA PIEZOELECTRIC
FIELDS AND OPTICAL TRANSITIONS IN GALNN/GAN MULTIPLE QUANTUM WELLS 673
J. S. IM, H. KOLLMER, S. HEPPEL, J. OFF, F. SCHOLZ, AND A. HANGLEITER
BLUE-ULTRAVIOLET PIN STRUCTURE PHOTO-DETECTORS OF II-VI WIDE BANDGAP
SEMICONDUCTORS GROWN BY MBE 677 H. ISHIKURA, N. FUKUDA, Y. OKUNO, K.
GOTOH, S. KAWAMOTO, T. SHIRAI, T. ABE, H. KASADA, AND K. ANDO 13.
OPTICAL PROPERTIES & DEVICES II OPTICAL GAIN IN NITRIDE AND II-VI DIODE
LASERS: A STUDY IN COMPARISON (INVITED) 683 A. NURMIKKO ANALYSIS OF THE
OPTICAL PROPERTIES OF THIN GAN LAYERS ON 6H-SIC (0001) 688 O. BRANDT, B.
YANG, H -J. WIINSCHE, J. RINGLING, U. JAHN, G. PARIS, AND K. PLOOG
VALENCE BAND SPLITTING OF GAN ASSESSED BY PECULIAR STRAIN DISTRIBUTION
IN HVPE-ELO FILMS 692 A. A. YAMAGUCHI, K. KOBAYASHI, A. SAKAI, Y.
MOCHIZUKI, ... ATOM-RESOLVED IMAGING ON RECONSTRUCTIONS OF THE GAN
(0001) FORMED ON 6H-SIC (0001) (LATE NEWS) 696 Q. Z. XUE, Q. K. XUE, Y.
HASEGAWA, I. S. T. TSONG, AND T. SAKURAI OBSERVATION OF LOOP
DISLOCATIONS IN ALGAN/INGAN/GAN SQW (LATE NEWS) 698 Y. HONDA, T. MATSUE,
M. SHIMIZU, Y. ONO, Y. LYECHIKA, AND T. MAEDA XIX 14. NOVEL TVENDS NEW
MATERIALS FOR WIDE BANDGAP II-VI VISIBLE EMITTERS (INVITED) 703 M. C.
TAMARGO, L. ZENG, W. LIN, S. GUO, Y. Y. LUO, Y. GUO, Y. C. CHEN, AND B.
J. FITZPATRICK SELF-ASSEMBLING AKJA, N (X~0.05) QUANTUM-DOT FORMATION ON
AL 03G GA 062 N SURFACES USING ANTI-SURFACTANT 707 H. HIRAYAMA AND Y.
AOYAGI EPITAXIAL GROWTH OF ALLOYS AND SUPERLATTICES BASED ON ZNO 711 A.
OHTOMO, I. OHKUBO, M. KAWASAKI, H. KOINUMA, G. ISOYA, T. YASUDA, AND Y.
SEGAWA METALORGANIC VAPOR PHASE EPITAXY OF HIGH QUALITY CUBIC GAN, ALGAN
AND THEIR APPLICATION TO OPTICAL DEVICES 715 J. WU, H. YAGUCHI, K.
ONABE, AND Y. SHIRAKI REALIZATION OF BLUE-VIOLET WAVELENGTH REGION
GAN-RICH GANP BY THE GROWTH AT LOW TEMPERATURES 719 H. TAMPO, H. ASAHI,
K. IWATA, K. ASAMI, AND S. GONDA WET CHEMICAL ETCHING OF GAN USING HOT
PYROPHOSPHORIC ACID 723 M. SHIMIZU, A. SUZUKI, M. WATANABE, J.
SHIRAKASHI, K. BALAKRISHNAN, AND H. OKUMURA AL 027 GA 073 N/GAN
DISTRIBUTED BRAGG REFLECTOR GROWN BY ATMOSPHERIC PRESSURE MOCVD 727 H.
ISHIKAWA, N. NAKADA, G. Y. ZHAO, T. EGAWA, T. JIMBO, AND M. UMENO AUTHOR
INDEX 731 XX
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV012631094 |
| classification_rvk | UH 5616 |
| ctrlnum | (OCoLC)489154526 (DE-599)BVBBV012631094 |
| discipline | Physik |
| format | Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1998 Chiba gnd-content |
| genre_facet | Konferenzschrift 1998 Chiba |
| id | DE-604.BV012631094 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:30:57Z |
| institution | BVB |
| isbn | 9051994559 4274902455 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008581368 |
| oclc_num | 489154526 |
| open_access_boolean | |
| owner | DE-703 |
| owner_facet | DE-703 |
| physical | XX, 736 S. Ill., graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | IOS Press [u.a.] |
| record_format | marc |
| spelling | Blue laser and light emitting diodes II Ed. by K. Onabe ... Amsterdam [u.a.] IOS Press [u.a.] 1998 XX, 736 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Blaulicht (DE-588)4145867-9 gnd rswk-swf Laserdiode (DE-588)4195920-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1998 Chiba gnd-content Laserdiode (DE-588)4195920-6 s Blaulicht (DE-588)4145867-9 s DE-604 Onabe, Kentaro Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008581368&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Blue laser and light emitting diodes II Blaulicht (DE-588)4145867-9 gnd Laserdiode (DE-588)4195920-6 gnd |
| subject_GND | (DE-588)4145867-9 (DE-588)4195920-6 (DE-588)1071861417 |
| title | Blue laser and light emitting diodes II |
| title_auth | Blue laser and light emitting diodes II |
| title_exact_search | Blue laser and light emitting diodes II |
| title_full | Blue laser and light emitting diodes II Ed. by K. Onabe ... |
| title_fullStr | Blue laser and light emitting diodes II Ed. by K. Onabe ... |
| title_full_unstemmed | Blue laser and light emitting diodes II Ed. by K. Onabe ... |
| title_short | Blue laser and light emitting diodes II |
| title_sort | blue laser and light emitting diodes ii |
| topic | Blaulicht (DE-588)4145867-9 gnd Laserdiode (DE-588)4195920-6 gnd |
| topic_facet | Blaulicht Laserdiode Konferenzschrift 1998 Chiba |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008581368&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT onabekentaro bluelaserandlightemittingdiodesii |