Proceedings of the 27th European Solid-State Device Research Conference: Stuttgart, Germany, 22 - 24 September 1997 ; ESSDERC' 97
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
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Paris
Ed. Frontieres
1997
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVI, 767 S. Ill., graph. Darst. |
| ISBN: | 2863322214 |
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| 245 | 1 | 0 | |a Proceedings of the 27th European Solid-State Device Research Conference |b Stuttgart, Germany, 22 - 24 September 1997 ; ESSDERC' 97 |c Ed. by H. Grünbacher |
| 246 | 1 | 3 | |a ESSDERC' 97 |
| 264 | 1 | |a Paris |b Ed. Frontieres |c 1997 | |
| 300 | |a XVI, 767 S. |b Ill., graph. Darst. | ||
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| 650 | 7 | |a Circuits intégrés - Congrès |2 ram | |
| 650 | 7 | |a Semiconducteurs - Congrès |2 ram | |
| 650 | 7 | |a Électronique de l'état solide - Congrès |2 ram | |
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 4 | |a Solid state electronics |v Congresses | |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 700 | 1 | |a Grünbacher, Herbert |e Sonstige |4 oth | |
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| adam_text | IMAGE 1
ESSDERC97
PROCEEDINGS OF THE
27TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE
STUTTGART, GERMANY
22-24 SEPTEMBER 1997
EDITED BY H. GRUNBACHER
IMAGE 2
VII
PLENARYAND INVITED PAPERS
BENCHMARKING SEMICONDUCTOR MANUFACTURING 2
R.C. LEACHMAN, D.A. HODGES UNIVERSITY OFCALIFORNIA, BERKELEY, UNITED
STATES
HUMAN CAPITAL FOR GROWTH IN MICROELECTRONICS (THE BRAIN INTENSIVE ERA)
10 P. MARTINOTTI
SGS THOMSON MICROELECTRONICS, SAINT GENIS PAIELLY, FRANCE
STATE OF THE ART IN COMPACT MODELLING WITH EMPHASIS ON BIPOLARRF CIRCUIT
DESIGN 14 H.C. DE GRAAFF
DELFT UNIVERSITY OF TECHNOLOGY, NETHERLANDS RF MOBLILE COMMUNICATION
CIRCUITS COMPARISON OFTECHNOLOGIES 24
Y. NEUVO
NOKIA MOBILE PONES, ESPOO, FINLAND PROSPECTS IN SILICON NANOELECTRONICS
28 M. VAN ROSSUM IMEC, LEUVEN, BELGIUM RECENT PROGRESS WITH VERTICAL
TRANSISTORS 34
L RISCH, TH. AEUGLE, W RFLSNER SIEMENS AG, MUNICH, GERMANY MULTI LAYER
METALLIZATION 42
M. LERME LET!CEA GRENOBLE, GRENOBLE, FRANCE DRAM TECHNOLOGIES FOR
TODAY S MARKETAND FUTURE DRAM GENERATIONS 49
W. NEUMUELLER ,J. ALSMEIER1, G. BRONNER3, S. LSHIBASHI1, H. KLOSE
SIEMENS AG
IBM TOSHIBA
MULTIFUNCTIONAL INTEGRATION USING HEMT
TECHNOLOGY 57
M. SCHLECHTWEG ET. AL. FRAUNHOFER INSTITUTE, FREIBURG I. BR., GERMANY
METAMORPHICS: EXTENDING THE LIMITS OFGAAS 75
G. SALMER, Y. CORDIER
IEMN, VILLENEUVE D ASCQ, FRANCE AM-LCDS BRING SOLID-STATE DEVICES TO
THE DISPLAY 88
K.J. NIEUWESTEEG, A.H. VAN OMMEN PHILIPS FLAT PANEL DISPLAY CO.,
EINDHOVEN,
NETHERLANDS
SILICON MICROSYSTEMS FOR AUTOMOTIVE
APPLICATIONS 101
J. MAREK
ROBERT BOSCH GMBH, REUTLINGEN, GERMANY SIGE/SI-HETEROSTRUCTURE DEVICES -
STATUS,
PROBLEMS AND PROSPECTS 116
U. KOMG DAIMLER BENZ RESEARCH, ULM, GERMANY
NOISE ANALYSIS IN DEVICES UNDER NON-LINEAR OPERATION 117
A. CAPPY, F. DANNEVILLE, G. DAMBRINE IEMN,VILLENEUVE D ASCQ, FRANCE THE
TRANSISTOR S DISCOVERY AND WHAT S AHEAD 125
M.R. PINTO, W.F. BRINKMAN, W. TROUTMAN LUCENTTECHNOLOGIES, MURRAY HILL,
UNITED STATES
TUNNELING GATE OXIDE MOSFET TECHNOLOGY 133 H.S. MOMOSE, S.-I. NAKAMURA,
Y. KATSUMATA, H. IWAI TOSHIBA CORP., KAWASAKI, JAPAN
SILICON RF TECHNOLOGY -THETWO GENERIC
APPROACHES 143
J. BURGHARTZ
IBM, YOTKTOWN HEIGHTS, UNITED STATES SEMICONDUCTOR PACKAGING ANDNEW
PACKAGING CONCEPTS 154
W.M. BECKENBAUGH ADV. INTERCONNECT SYSTEMS LABS, TEMPE, _ UNITED STATES
STATEGIC ALLIANCES FOR HIGHLY EFFICIENT 300 MM WAFERFABS 155
J. GIEBMANN
MEISSNER & WURST GMBH+CO, STUTTGART, GERMANY STATISITCALANALYSIS FOR
IC-MANAGEMENT 162 J.K. KIBARIAN
PDF SOLUTIONS, SAN JOSE, UNITED STATES OPTICAL UROGRAPHY, HOW FAR WILL
IT GET US? 163 L. VANDEN HOVE
IMEC,LEUVEN, BELGIUM GAN-BASED DEVICES FOR ELECTRONIC APPLICATIONS 170
M.A. KHAN1, M. SHUR APA OPTICS INC., BLAINE, UNITED STATES RENSSELAER
POLYTECHNIC INST., TROY, UNITED STATES
CONTRRLBLTREDFAPERS
OPTIMIZATION OFA LATERAL DMOS TRANSISTOR FOR LOW VOLTAGE, RF POWER
OPERATION 176
N.G.H. VAN MELICK , F. VAN RIJS! EINDHOVEN UNIVERSITY OFTECHNOLOGY,
NETHERLANDS
PHILIPS RESEARCH LABORATORIES, EINDHOVEN,
NETHERLANDS
MAIDS: A MICROWAVE ACTIVE INTEGRAL DEVICE SIMULATOR 180
L.C.N. DE VREEDE, W. V. NOORT,
H.C. DE GRAAFF, J.L. TAURITZ, J. SLOTBOOM DELFT UNIVERSITY OFTECHNOLOGY,
NETHERLANDS
IMAGE 3
VII!
THERMAL RESISTANCE MODELLING OFRF HIGH POWER BIPOLAR TRANSISTORS K.
MOUTHAAN, R. TINTI, A. ARNO, H.C. DE GRAAFF, J.L. TAUNTZ, J. SLOTBOOM
DELFT UNIVERSITY OF TECHNOLOGY, NETHERLANDS
EXAMINATION OFTRANSIENT DRIFT-DIFFUSIONAND HYDRODYNAMIC MODELING
ACCURACY FOR SIGE HBTS BY 2D MONTE-CARLO DEVICE SIMULATION B. NEINHUS,
P. GRAF, S. DECKER,
B. MEINERZHAGEN UNIVERSITY OF BREMEN, GERMANY RF PERFORMANCE OFSTRAINED
SI MODFETS AND MOSFETS ON VIRTUAL SIGE SUBSTRATES: A MONTE CARLO STUDY
S. ROY, A. ASENOV, S. BABIKER, J.R. BARKER, S.P. BEAUMONT
UNIVERSITY OF GLASGOW, UNITED KINGDOM
184
188
192
VKWN
A PHYSICALLY BASED SUBSTRATE CURRENT SIMULATION 196
M. KNAIPP, T. GRASSER, S. SELBERHERR TU VIENNA, AUSTRIA FULL BAND
MONTE-CARLO DEVICE SIMULATION OF
AN 0.1 URN N-CHANNEL MOSFET IN STRAINED SILICON MATERIAL 200
S. KEITH, F.M. BUFLER, B. MEINERZHAGEN UNIVERSITAT BREMEN, GERMANY
IMPACT OFNON-EQUILIBRIUM TRANSPORT AND SERIES RESISTANCES IN O.LUM BULK
AND
SOI MOSFETS 204
P.H. BRICOUT , E. AUGENDRE1, E. DUBOIS INST, SUPERIEUR D ELECTRONIQUE
NORD, LILLE,
FRANCE
LETI/CEA, GRENOBLE, FRANCE MONTE CARLO STUDY ON ELECTRON TRANSPORT
PROPERTIES IN DOUBLE-GATE FULLY DEPLETED SOI-MOSFETS 208
F. GAMIZ, J.B. ROLDAN,
J.A. LOPEZ-VILLANUEVA, J.E. CARCELLER UNIVERSIDAD DE GRANADA, SPAIN
INFLUENCE OFEXCITONIC SCATTERING ON CHARGE CARRIER AMBLPOLAR DIFFUSION
IN SILICON 212 E. VELMRE, A. UDAL TALLINN TECHNICAL UNIVERSITY, ESTONIA
SIGE GATE FOR HIGHLY PERFORMANT 0.15/0,18UM CMOS TECHNOLOGY T.
SKOTNICKI , P. BOUILLON , R. GWOZIECKI , A. HALIMAOUI , C. MOURRAIN , I.
SAGNES1,
J.-L. REGOLINI , O. JOUBERT , M. PAOLI , P. SCHIAVONE1
FRANCE TELECOM - CNET, MEYLAN, FRANCE ]CNRS LPCM UMRI NANTES, FRANCE
216
REALIZATION AND EVALUATION OF AN ULTRA LOWVOLTAGE/LOW-POWER 0.25UM
(N+/P+) DUAL-WORKFUNCTION CMOS TECHNOLOGY 220 U. SCHWALKE , J.
BERTHOLD1, A. BOURENKOV2,
M. EISELE , R. KRIEG1, A. NARR1, D. SCHUHMANN , R. SEIBERT1, R. THANNER1
SIEMENS AG, MUNICH, GERMANY FRAUNHOFER-INSTITUT, ERLANGEN, GERMANY
SIEMENS SEMICONDUCTOR DIVISION, MUNICH, GERMANY STUDY OF POCKET IMPLANT
PARAMETERS FOR 0,18 UMCMOS 224
J. SCHMITZ, Y.V. PONOMAREV,
A.H. MONTREE, P.H WOERLEE
PHILIPS RESEARCH LABORATORIES, EINDHOVEN,
NETHERLANDS
REALISATION OF A 0.1 UM VERTICAL MOSFET WITH A SIGE SOURCE 228
S. HALL, Z.Y. WU
THE UNIVERSITY OFLIVERPOOL, UNITED KINGDOM NEW ANTI-PUNCHTHROUGH DESIGN
FOR BURIED CHANNEL PMOSFET 232
J. SON, S. LEE, K. HUH, W. YANG, Y. LEE,
J. HWANG,
LG SEMICON CO. LTD., CHEONGJU, KOREA (SOUTH) LATERAL CHANNEL DOPING
ENGINEERING IN O.LUM RECESSED CHANNEL NMOSFETS 236
J. LYU, Y. CHOI, B.-G. PARK, K, CHUN,
J.D. LEE
SEOUL NATIONAL UNIVERSITY, KOREA (SOUTH) DETAILED MATCHING ANALYSIS OF
SUB-50 NMMOS-TRANSISTORS 240
J.T. HORSTMANN, U. HILLENNGMANN, K. GOSER
UNIVERSITY OFDORTMUND, GERMANY A COMPARATIVE STUDY OF THREE DESIGNS OF
0.10 UM NMOSFETS PROCESSED WITH HEAVY ION IMPLANTED POCKET 244
G. GUEGAN, S. DELCONIBUS, S. TEDESCO, B. DAL ZOTTO, M. HEITZMANN, J.C.
ROUSSIN,
F. MARTIN, C. CAILLAT
LETI/CEA, GRENOBLE, FRANCE
SELF-ALIGNED METALLIZATION OFHIGH-FREQUENCY BJT WITH LOW-STRESS
SILICON-NITRIDE SPACERS 248 H.W. VAN ZEIJL, L.K. NANVER DELFT UNIVERSITY
OFTECHNOLOGY,
NETHERLANDS
NANOMETER SCALE LITHOGRAPHY OFSILICON AND TITANIUM USING SCANNING PROBE
MICROSCOPY 252 E. DUBOIS, P.A. FONTAINE
IEMN/ISEN, VILLENEUVE D ASCQ, FRANCE
IMAGE 4
IX
AN IMPROVED TECHNOLOGY FOR ELEVATED SOURCE/DRAIN MOSFETS
A.M. WAITE, D.J. HOWARD, S. KUBICEK, M. CAYMAX, K. DEMEYER, A.G.R. EVANS
IMEC, LEUVEN, BELGIUM UNIVERSITY OFSOUTHAMPTON, UK
A 0.5 UM FLASH TECHNOLOGY SUITABLE FOR LOW VOLTAGE EMBEDDED APPLICATIONS
J.K. YEN , H.D. SU1, Y.F. LIN , CD. SHIEH D.S. KUO , M.S. LIANG , G.Q.
TAO ,
F.J. LIST2, L. SHI!, R. COLCLASER1, N. TANDAN K. CHEN2, M. CHEN2, A. VAN
GORKUM1 TAIWAN SEMICONDUCTOR MANUFACTURING, HSIN-CHU CITY, TAIWAN
PHILIPS SEMICONDUCTORS, EINDHOVEN,
NETHERLANDS
THINNING OXIDE-NITRIDE-OXIDE INTERPOLY DIELECTRIC (LL-13NM) FOR 0.25 UM
FLASH CELL MEMORIES P. CANDELIER , B, DE SALVO1, F. MARTIN ,
B. GUILLAUMOT1, F. MONDON*, G. REIMBOLD LETI/CEA, GRENOBLE, FRANCE
2LPCS, ENSERG, GRENOBLE, FRANCE SGS-THOMSON MICROELECTRONICS
UNIVERSITE JOSEPH FOURIER, GRENOBLE, FRANCE
OPTIMISATION OF ULTRA HIGH DENSITY MOS ARRAYS IN 3D T. HANEDER , E.
BERTAGNOLLI2, H. VON PHILIPSBORN , W. KRAUTSCHNEIDER ,
F. HOFMANN2, J. WILIER , T. BOEHM
UNIVERSITY OFREGENSBURG, GERMANY SIEMENS AG, MUNICH, GERMANY
TECHNOLOGY OFTHEDIODE PROGRAMMABLE READ
ONLY MEMORY H. LIFKA, P.H. WOERLEE, C. DE GRAAF, CM. HART, P.J.M
JANSSEN, G.M. PAULZEN, M.J.J. THEUNISSEN, P.W.H. DE VREEDE,
PHILIPS RESEARCH LABORATORIES, EINDHOVEN,
NETHERLANDS
256
HHH.
260
264
268
272
POLYIMIDE OPTICAL WAVEGUIDE WITH MULTI-FANOUT FOR MULTICHIP MODULE
APPLICATION 276 T. MATSUMOTO, T. FUKUOKA, H. KURINO,
M. KOYANAGI TOHOKU UNIVERSITY, SENDAI, JAPAN NOVEL FABRICATION
TECHNOLOGY FOR ULTRACOMPACTTHREE-DFMENSIONALMMICS 280 SUEHIRO SUGITANI,
K. ONODERA, S. AOYAMA, M. HIRANO, K. YAMASAKI NTT SYSTEMS ELECTRONICS
LABS., KANAGAWA, JAPAN A FULLY GAAS-BASED 100MHZ, 2W DC-TO-DC POWER
CONVERTER 284
S. AJRAM, R. KOZLOWSKI, H. FAWAZ, D. VANDERMOERE, G. SALMER
IEMN-DHS, VILLENEUVE D ASCQ, FRANCE
AN INP-HBT TECHNOLOGY FOR MONOLITHIC OPTOELECTRONIC RECEIVERS WITH 24
GHZ BANDWIDTH 288
B. WILLEN, D. HAGA, 0. WESTERGREEN ROYAL INSTITUTE OF TECHNOLOGY, KISTA,
SWEDEN 18 GHZ HIGH GAIN MONOLITHICALLY INTEGRATED INP/INGAAS
PINYHBT-RECEIVER 292
D. HUBER, M. BITTER, R. BAUKNECHT, T. MORF, C. BERGAMASCHI, H. JSCKEL
SWISS FEDERAL INST, OFTECHNOLOGY, ZURICH, SWITZERLAND
TRANSFERRED ELECTRON EFFECT IN AIGAAS/GAAS
MULTI-QUANTUM-WELL STRUCTURES 296
A.L. SPRINGER, C.G. DISKUS, K. LQBKE, A. STELZER, H.W. THIM UNIVERSITY
OFLINZ, AUSTRIA
HIGH FREQUENCY SMALL-SIGNAL AND LARGESIGNAL CHARACTERISTICS OFRESONANT
TUNNELING
HIGH ELECTRON MOBILITY TRANSISTORS 300 K.J. CHEN , K. MAEZAWA , M.
YAMAMOTO
CITY UNIVERSITY OF HONG KONG, KOWLOON,
HONG KONG NTT SYSTEMS ELECTRONICS LABS., KANAGAWA, JAPAN REEXAMINATION
OFELECTRON MOBILITY DEPENDENCE ON DOPANTS IN GAAS 304
CH. K&PF, G. KAIBLINGER-GRUJIN, H. KOSINA, S. SELBERHERR
TU VIENNA, AUSTRIA
SELECTIVELY-IMPLANTED COLLECTOR PROFILE
OPTIMISATION FOR HIGH-SPEED VERTICAL BIPOLAR TRANSISTORS 308
M.S. PETER, G.A.M. HURKX, C.E. TIMMERING PHILIPS RESEARCH LABORATORIES,
EINDHOVEN,
NETHERLANDS
A UNIFIED APPROACH FOR MODELING MULRITERMINAL BIPOLAR AND MOS DEVICESIN
SMART-POWER TECHNOLOGIES 312
N. SPECIALE, A. LEONE, S. GRAFFI, C. MASETTI UNIVERSITY OF BOLOGNA,
ITALY SIMULATION OFAVALANCHE INJECTION FILAMENTATION IN MOSFET S AND
IGBT S 316
V.A. VASHCHENKO, Y.B. MARTYNOV, V.F. SINKEVITCH
STATE RESEARCH INSTITUTE PULSAR , MOSCOW, RUSSIAN FEDERATION
THEORETICAL ANALYSIS OFA PSEUDO-FLOATING GATE FLASH EEPROM DEVICE 320
A. CONCANNON , A. MATHEWSON , C. PAPADAS2, B. GUILLAUMOT2, C. KELAIDIS1
NAT MICROELECTRON. RES. CENT CORK, IRELAND 2SGS-THOMSON
MICROELECTRONICS, CROLLES, FRANCE NCSR DEMOKRITOS , GREECE
IMAGE 5
X
A NEW METHOD FOR VERIFICATION OF MOSFET MODELS BASED ON DEVICE PARAMETER
VARIATIONS 324 C. KFLHN , W. WEBER2 UNIVERSITAT DER BUNDESWEHR,
NEUBIBERG,
GERMANY SIEMENS CORPORATE RESEARCH, MUNICH, GERMANY
EXCESS NOISE POWER SPECTRUM IN MOSFETS 328 E. GATTI, A. LONGONI, G. DE
GERONIMO, A. GERACI
POLITECNICO DI MILANO, ITALY DETERMINATION OFINTERFACE STATEDENSITY OF
ULSI N-MOSFET BY 1/F NOISE MEASUREMENTS 332
S. VILLA, G. DE GERONIMO, A. PACELLI, A. LACAITA, A. LONGONI,
POLITECNICO DI MILANO, ITALY INVESTIGATION OFTHE INFLUENCE OF IMPACT
IONIZATION FEEDBACK ON THE SPATIAL DISTRIBUTION OFHOT CARRIERS IN AN
NMOSFET 336
C. JUNGEMANN, S. YAMAGUCHI, H. GOTO FUJITSU LIMITED, KAWASAKI, JAPAN
UNIVERSITY OFBREMEN, GERMANY MONTE CARLO COMPARATIVE STUDY OF
CURRENTMODE NOISE IN SI/SI 1-X GE X STRAINED HETEROJUNCTIONS 340
M.J. MARTIN, D. PARDO, J.E VELASQUEZ UNIVERSIDAD DE SALAMANCA, SPAIN HOT
CARRIER EFFECT IN SUB-O.LUM SOIMOSFETS 344
E. RAULY, F. BALESTRA
LPCS, ENSERG, GRENOBLE, FRANCE
THE DESIGN AND CHARACTERISATION OFA SIGE I2L TECHNOLOGY 348
N.E. MOISEIWITSCH , G.P. KENNEDY , S. WAINWRIGHT , P. ASHBUM , S. HALL
UNIVERSITY OF SOUTHAMPTON, UK UNIVERSIDAD DEL PAIS VASCO, BILBAO,
SPAIN UNIVERSITY OF LIVERPOOL, UNITED KINGDOM LOW-NOISE AMPLIFIER FOR
MOBILE COMMUNICATIONS USING A PRODUCTION READY SIGE-HBT TECHNOLOGY 352
U. ERBEN , A. SCHILPPEN , H. DIETRICH , H. SCHUMACHER
UNIVERSITY OF ULM, GERMANY TEMIC TCLEFUNKEN MICROELECTRONIC,
HEILBRONN, GERMANY A 9GHZ BANDWITH PREAMPLIFIER IN 10 GBPS OPTICAL
RECEIVER USING SIGE BASE HBT 356
B.R. RYURN, D.-H. CHO, S.-M. LEE, T.-H. HAN ELECTRONICS AND TELECOM.
RESEARCH
INSTITUTE, TAEJON, KOREA (SOUTH)
EFFECTS OFPROCESSING TEMPERATURES ON DEVICE DESIGN RULES FOR
SILICON/SILICON GERMANIUM
HETEROJUNCTION BIPOLAR TRANSISTORS 360
R. BASHIR, A.E. KABIR, E.R. MYERS, J. DESANTIS, C. BRACKEN, P, WESTROM,
F.WANG NATIONAL SEMICONDUCTOR COR., SANTA CLARA, UNITED STATES
SUPPRESSION OF THE REVERSE SHORT CHANNEL EFFECT IN (SUB-)0.25UM NMOSFETS
USING ELEVATED S/D STRUCTURES 364
D. SCHUMANN, R. KNEG, H. SCHATER, U. SCHWALKE
SIEMENS AG, MUNICH, GERMANY
RTS DIAGNOSTICS OF SOURCE-DRAIN (EDGE?) RELATED DEFECTS IN SUBMICRON
N-MOSFETS 368 N. LUKYANCHIKOVA , M.V. PETRICHUK , N. GARBAR , E.
SIMOEN , C. CLAEYS
INSTITUTE OF SEMICONDUCTOR PHYSICS, KIEV, UKRAINE
IMEC, LEUVEN, BELGIUM OPTICAL TESTING OF SUBMICRON-TECHNOLOGY MOSFETS
AND BIPOLAR TRANSISTORS 372
D. POGANY , C. FURBSCK , N. SELIGER , P. HABAS , E. GORNIK , S.
KUBICEK , S. DECOUTERE
TU VIENNA, AUSTRIA IMEC, LEUVEN, BELGIUM FABRICATION OF 0.1 UM MOSFET
WITH SUPER SELF-ALIGNED ULTRASHALLOW JUNCTION ELECTRODES
USING SELECTIVE SIL-X GEX CVD 376
J. MUROTA, M. ISHII, K. GOTO, M. SAKURABA, T. MATSUURA, Y. KUDOH, M.
KOYANAGI TOHOKU UNIVERSITY, SENDAI, JAPAN PERIODIC TRANSCONDUCTANCE
OSCILLATIONS IN SUB-LOONM MOSFETS 380
G. WIRTH , U. HILLERINGMANN , J. HORSTMANN , K. GOSCR
FED. UNIVERSITY OF RIO GRANDE DO SUL, PORTO ALCGRE, BRAZIL UNIVERSITY
OFDORTMUND, GERMANY ON THE TRANSCONDUCTANCEENHANCEMENT AT LOW
TEMPERATURE IN DEEP SUBMICRON MOSFETS 384
B. SZELAG, F. BALESTRA ENSERG GRENOBLE, FRANCE
JUNCTIONS DESIGN GUIDELINES FOR O.LSUM CMOS 388 R. GWOZICCKI, T.
SKOTMCKI, P. BOUILLON, A. PONCET
FRANCE TELECOM - CNET, MEYLAN, FRANCE INVESTIGATION OF THE EFFECT OFTHE
EXTENSION
IMPLANT ENERGY ON DEEP SUBMICRON CMOS DEVICE PERFORMANCE 392
S. KUBICEK, S, BIESEMANS, K. DE MEYER IMEC, LEUVEN, BELGIUM
IMAGE 6
XI
0.25 UMNMOS TRANSISTOR WITH NITRIDE SPACER: REDUCTION OFTHE SHORT
CHANNEL EFFECT BY OPTIMISATION OF THE GATE REOXIDATION PROCESS AND
RELIABLITY 396
M. ADA-HANIFI, M BONIS, CH. VEROVE, M.T. BASSO, N. REVIL, M. HAOND, M.
LECONTELLEC SGS-THOMSON MICROELECTRONICS, CROLLES, FRANCE
LOW-COST CMOS PROCESS WITH COMPLETE POST-GATE IMPLANTATION SCHEME 400
M. KERBER, U. SEHWALKE, R. HEINNCH SIEMENS AG, MUNICH, GERMANY A HIGH
PERFORMANCE 0.18 UM CMOS TECHNOLOGY DESIGNED FOR MANUFACTURABILITY 404
G. BADENES , M. HENDRIKS , C. PERELL6 , L. DEFERM
IMEC, LEUVEN, BELGIUM PHILIPS SEMICONDUCTORS, NIJMEGEN,
NETHERLANDS
A 34 GHZ FT BIPOLAR PROCESS WITH HIGH-ENERGY-IMPLANTED COLLECTOR 408
Y.V. PONOMAREV , C.H.H. EMONS1, W. VAN DER WEI , M.A. VAN DEN BERG ,
C.E. TIMMERING , A.C.L. JANSSEN , J. POLITICK PHILIPS RESEARCH
LABORATORIES, EINDHOVEN,
NETHERLANDS
PHILIPS SEMICONDUCTORS, NIJMEGEN,
NETHERLANDS
A PERFORMANCE COMPARISON BETWEEN 0.35UM SELF-ALIGNED AND
QUASI-SELF-ALIGNED DOUBLEPOLYSILICON BIPOLAR TRANSISTORS 412
L. AILLOUD , J. DE PONTCHARRA ,
G. BARTOLETTI , J. KIRTSCH , G. AUVERT , A. CHANTRE
SGS THOMSON MICROELECTRONICS, GRENOBIE, FRANCE
CEA-LET1, GRENOBLE, FRANCE FRANCE TELECOM - CNET
AN INVESTIGATION OF POLYSILICON EMITTER BIPOLAR TRANSISTORS WITH AN
OZONIZED
POLYSILICON/MONOSILICON INTERFACE 416
S. NIEL , C. HERNANDEZ , R. PANTEL ,
I. SAGNES , M. BERENGUER , J. KIRTSCH ,
A. MONROY , A, CHANTRE1, G. VINCENT FRANCE TELECOM - CNET, MEYLAN,
FRANCE SGS-THOMSON MICROELECTRONICS, CROLLES, FRANCE
UNIVERSITY JOSEPH FOURIER, FRANCE A MANUFACTURABLE 0.35 URNBICMOS USING
SELF-ALIGNED COBALT SLLLCIDETECHNOLOGY 420
T. LGARASHI1, S. KUBO , K. SUDA , T. N&KASHIMA , Y. OHTSU , M.
YAMAWAKI , S. ASAI
MITSUBISHI ELECTRIC CORPORATION, HYOGO, JAPAN RYODEN SEMICONDUCTOR
SYSTEM ENG, CORP.,
HYOGO, JAPAN
CMOS PRODUCTION COMPATIBLE SIGE HETEROEPITAXY FOR HIGH FREQUENCY
CIRCUITS 424 G. RITTER, D. BOLZE, G. FISCHER, D. KNOLL, P. SCHLEY, B
TILLACK, D. WOLANSKY
INSTITUTE FOR SEMICONDUCTOR PHYSICS, FRANKFURT (ODER), GERMANY
NEW DESIGNS, READOUT CONCEPTAND SIMULATION APPROACH OF MICROMACHINCD
RATE GYROSCOPES 428
W. GEIGER, B. FOLKMER, H. SANDMAIER, W.LANG HSG-IMIT,
VILLINGEN-SCHWENNINGEN, GERMANY SLOT-ANTENNA-COUPLED MICROBOLOMETERS FOR
FARINFRARED DETECTION 432
Y. YASUOKA, T. UCHIDA, H. KOBAYASHI NATIONAL DEFENSE ACADEMY, YOKOSUKA,
JAPAN
AN ALTERNATIVE METHOD TO MONITOR AND CONTROL THE IC TEMPERATURE IN THE
4.2-77 K RANGE 436 E. A. GUTIERREZ-D. , J. DE LA HIDALGA-W. , M.J.
DEAN2, S.V. KOSHEVAYA
INAOE, PUEBLA, MEXICO SIMON FRASER UNIVERSITY, BURNABY, CANADA
VIBRATION SENSOR WITH OPTOELECTRONIC INTERFACE 440
E- PEINER, K, FRICKE, S. MO, D. FEHLY, A. SCHLACHETZKI
TECHNISCHEUNIVERSITAT BRAUNSCHWEIG, GERMANY FLEXIBLE
MICRO-PHOTODIODEARRAY AS A SUBRETINAI IMPLANT 444
M.B. SCHUBERT , A. HIERZENBERGER , H.N. WANKA , M. GRAF , H.G. GRAF , W.
NISCH UNIVERSITY OF STUTTGART, GERMANY INST. F. MIKROELEKTRONIK
STUTTGART, GERMANY
UNIVERSITY OFTUBINGEN, GERMANY
CORRELATION BETWEEN ELECTROMIGRATION DAMAGE KINETICS AND MICROSTRUCTURE
IN
CU INTERCONNECTS 448
A. GLADKIKH, M. KARPOVSKI, A. PALEVSKI TEL AVIV UNIVERSITY, RAMAT AVIV,
ISRAEL FINITE ELEMENT ANALYSIS OFSTRESS DISTRIBUTIONS IN INTERCONNECT
STRUCTURES 452
J. COUGHLAN, S. FOLEY, A. MATHEWSON
NAT. MICROELECTRONICS RESEARCH CENTRE, CORK, IRELAND
INFLUENCE OF THERMAL HEATING EFFECT ON PULSED DC ELECTROMIGRATION RESULT
ANALYSIS 456 P. WALTZ , L. ARNAUD , G. TARTAVEL ,
G. LORMAND
LETI/CEA, GRENOBLE, FRANCE GEMPPM - INSA - UMRCNRS, VILLEURBANNE,
FRANCE
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ELECTRO-THERMAL INTERACTION ON CIRCUIT LEVEL UNDER THE INFLUENCE
OFPACKAGING 460
G. DIGELE1, S. LINDENKREUZ , E. KASPER ROBERT BOSCH GMBH, REUTLINGEN,
GERMANY UNIVERSITY OF STUTTGART, GERMANY
BUILDING IN RELIABILITY WITH LATCH-UP,ESD AND HOT CARRIER EFFECTS ON A
0.25 UM CMOS
TECHNOLOGY 464
C. LEROUX , P. SALOME1, G. REIMBOLD , D. BLACHIER , G. GUEGAN , M
BONIS , LETI/CEA, GRENOBLE, FRANCE
CNET - CNS, MEYLAN, FRANCE
COST EFFECTIVE SIMULATION OF THREE-DIMENSIONAL EFFECTS IN THE SHALLOW
TRENCH ISOLATION PROCESS P. SALLAGOITY , M. ADA-HANIFI , A. PONCET
CNET - SGS THOMSON, CROLLES, FRANCE
FRANCE TELECOM - CNET, MEYLAN, FRANCE A NOVEL DIFFUSION COUPLED
OXIDATION MODEL M. RADI, E. LEITNER, E. HOLLENSTEINER,
S. SELBERHERR
TU VIENNA, AUSTRIA THREE-DIMENSIONAL SIMULATION OF CONTACT HOLE
METALLIZATION USING ALUMINUM SPUTTER DEPOSITION AT ELEVATED TEMPERATURES
E. BAR1, J. LORENZ , H. RYSSEL UNIVERSITAT ERLANGCN-NURNBERG, GERMANY
FRAUNHOFER-INSTITUT, ERLANGEN, GERMANY A NEW CELLULAR ETCHING-SIMULATOR
FOR INP AND SI
H.-H. WEHMANN,M. CHAHOUD, A. SCHLACHETZKI
TECHNISCHE UNIVERSITAT BRAUNSCHWEIG, GERMANY
468
472
476
480
WMMM *THERMAL ANALYTICAL MODEL FOR ANALYSIS OFPULSED DC
ELECTROMIGRATION RESULTS 484P. WALTZ, G. LORMAND, L. AMAUD GEMPPM - INSA
- UMRCNRS,VILLCURBANNE, FRANCELETI/CEA, GRENOBLE, FRANCEINFLUENCE OF
SUBSTRATETYPE ON INTERCONNECTPEFORMANCE 488N. DELORME , M. BELLEVILLE ,
J. CHILO LETI/CEA, GRENOBLE, FRANCE2PFT - CEM, SAINT MARTIN D HERES,
FRANCEELECTRICAL MODELLING OF KELVIN STRUCTURES FORTHE DERIVATION OF LOW
SPECIFIC CONTACT RESISTIVITY 492G.K. REEVES , A.S. HOLLAND , B.
HARRISON ,P.W. LEECH ROYAL MELBOURNE INST,
OFTECHNOLOGY,AUSTRALIA CSIRO, CLAYTON, AUSTRALIA GRIFFITH UNIVERSITY,
BRISBANE, AUSTRALIA
STUDIES ON THE HEAT REMOVAL FEATURES OFSTACKED SOI STRUCTURES WITH A
DEDICATED FIELD SOLVER PROGRAM (SUNRED) 496
ZS. KOHARI , V. SZ6KELY , M. RENCZ , V. DUDEK B. HOFFLINGER2 TECHNICAL
UNIVERSITY OF BUDAPEST, HUNGARY INSTITUTE FOR MICROELECTRONICS,
STUTTGART,
GERMANY
PREDICTIVE EXPRESSION OF PROPAGATION DELAY IN SHORT CHANNEL CMOS/SOI
INVERTER USING MONTE CARLO SIMULATION 500
M.E. ARBEY, S. GALDIN, P. DOLLFUS, P. HESTO UNIVERSITE PANS XI, ORSAY,
FRANCE
10.1: #1 AND HIGH VOLTAGE DEVICES ; DEVELOPMENT OF THE NEXT GENERATION
OF INSULATED GATE BIPOLAR TRANISTORS BASED ON TRENCH TECHNOLOGY 504
F. UDREA , S.S.M. CHAN , J. THOMSON ,
S. KELLER , G.A.J. AMARATUNGA1,
A.D. MILLINGTON , P.R. WAIND , D.E. CREES UNIVERSITY OF CAMBRIDGE,
UNITED KINGDOM
GEC PLESSEY SEMICONDUCTORS, LINCOLN, UK LIVERPOOL UNIVERSITY, UK A
HIGH VOLTAGE NDMOS STRUCTURE IN A STANDARD SUB-MICRON CMOS PROCESS 508
M. VERMANDEL, C. DE BACKCRC, A. VAN CALSTER
UNIVERSITEIT GENT, BELGIUM A STUDY OFTEMPERATURE DISTRIBUTION IN
SOI-SMARTPOWER DEVICES IN TRANSIENT CONDITIONS BY OPTICAL INTERFEROMETRY
512
N. SELIGER , D. POGANY , C. FURBOCK , P. HABAS , E. GOMIK , M. STOISIEK
TU VIENNA, AUSTRIA SIEMENS AG, MUNICH, GERMANY SOURCE/DRAIN
ENGINEERING WITH GE LARGE ANGLE TILT IMPLANTATION AND PREAMORPHTZATLON
TO IMPROVE CURRRENT DRIVE AND ALLEVIATE FLOATING BODY EFFECTS OF THIN
FILM SOIMOSFETS 516
T. C. HSIAO , P. LIU , W.T. LYNCH , J.C.S. WOO
ADVANCED MICRO DEVICES INC., SUNNYVALE, USA UNIVERSITY OF CALIFORNIA,
LOS ANGELES, USA SEMICONDUCTOR RESEARCH CORP., TRIANGLE RESEARCH PARK,
UNITED STATES TEMPERATURE DEPENDENCE (300-600K) OF PARASITIC BIPOLAR
EFFECTS IN SOL-MOSFETS 520
G. REICHCRT , C. RAYNAUD , O. FAYNOT . F. BALESTRA , S. CRISTILOVEANU
ENSERG GRENOBLE, FRANCE LETI/CEA, GRENOBLE, FRANCE DYNAMIC FLOATING
BODY EFFECTS IN PD SOI MOSFETS BIASED IN THE KINK REGION 524
L. PERRON , C. HAMAGUCHI , A. LACAITA , S. MAEGAWA , Y. YAMAGUCHI
POLITECNICO DI MILANO, ITALY OSAKA UNIVERSITY, JAPAN MITSUBISHI
ELECTRIC CORPORATION, HYOGO, JAPAN
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F
528
532
536
540
LIMITATIONS OF DOUBLE POLYSILICON SELF-ALIGNED BIPOLAR
TRANSISTORSTRUCTURE K. INOH, H. NII, S. YOSHITOMI, C. YOSHINO, H.
FURUYA, H. NAKAJIMA,
H. SUGAYA, H. NARUSE, Y. KATSUMATA, TOSHIBA CORPORATION, KAWASAKI, JAPAN
LOW FREQUENCY 1/F NOISE CHARACTERIZATION OF ADVANCED CMOS-COMPATIBLE
BIPOLAR JUNCTION TRANSISTORS FOR TECHNOLOGY EVALUATION
P. LLINARES , S. NIEL , M. LAURENS ,
G. GHIBAUDO , J.A. CHROBOCZEK FRANCE TELECOM - CNET, MEYLAN, FRANCE
SGS-THOMSON MICROELECTRONICS, CROLLES, FRANCE
LCPS, ENSERG/TNPG, GRENOBLE, FRANCE LOW-FREQUENCY NOISE CHARACTERISTICS
OF ADVANCED SI AND SIGE BIPOLAR TRANSISTORS
R. GABL, K. AUFINGER, J. BOCK, T.F. MEISTER SIEMENS AG, MUNICH, GERMANY
INVERSE SIGE HETEROJUNCTION BIPOLAR TRANSISTOR
L.C.M. VAN DEN OEVER , L.K. NANVER , C.C.G. VISSER , T.L.M. SCHOLTES ,
R.J.E. HUETING , J. SLOTBOOM DELFT UNIVERSITY OFTECHNOLOGY,
NETHERLANDS
PHILIPS RESEARCH LABORATORIES, EINDHOVEN,
NETHERLANDS
CONTROL OFSTEEP BORON PROFILES IN SI/SIGE HETEROJUNCTION BIPOLAR
TRANSISTORS B. HEINEMANN, D. KNOLL, G. FISCHER, D. KRILGER, G. LIPPERT,
H.J. OSTEN,
H. RFLCKER, W. RFTPKE, P. SCHLEY, B. TILLACK INSTITUTE FOR SEMICONDUCTOR
PHYSICS, FRANKFURT (ODER), GERMANY
MMMSSMMM GAAS SCHOTTKY GATE BIPOLAR TRANSISTORS FORHIGH VOLTAGE POWER
SWITCHING APPLICATIONSC. M. JOHNSON, M. HOSSIN, A.G. O NEILLUNIVERSITY
OF NEWCASTLE, NEWCASTLE UPONTYNE, UNITED KINGDOMMICROPLASMA AND UNIFORM
GATE BREAKDOWN IN MESFETS 552V.A. VASHCHENKO, Y.B. MARTYNOV,V.F.
SINKEVITCHSTATERESEARCH INSTITUTE PULSAR , MOSCOW,RUSSIAN FEDERATION
544
548
SURFACE RECOMBINATION VELOCITY MEASUREMENT IN SPEG SOS MOSFETS BY
BIPOLAR GAIN CHARACTERISATION 556
P. B. STEVENS, C.J. PATEL,J.A. KERR, C. SHAW
GEC PLESSEY SEMICONDUCTORS, LINCOLN, UK MIDDLESEX UNIVERSITY, LONDON,
UNITED KINGDOM
MECHANISMS OFLOCALIZED CHARGE INJECTION: A TECHNIQUE TO CHARACTERIZE
GATE EDGE DAMAGE IN MOS TRANSISTORS 560
A. SRIDHARAN , V, RAMGOPAL RAO , T. BROZEK , J. WERKING2, C.R. VISWANATW
UNIVERSITY OFCALIFORNIA, LOS ANGELES, UNITED STATES
SEMATECH, AUSTIN, UNITED STATES MOTOROLA, AUSTIN, UNITED STATES THE
IMPACT OFTHE S/D EXTENSIONS ON THE DRAIN CURRENT CHARACTERISTICS OF DEEP
SUBMICRON SI NMOSFETS AT 77 K 564
S. BIESEMANS, E. SIMOEN, S. KUBICEK, K. DE MEYER, C. CLAEYS IMEC,
LEUVEN, BELGIUM ENHANCED BREAKDOWN VOLTAGE AND CHARGE TO BREAKDOWN
OFCOLLECTOR IMPLANT-GATE OXIDEPOLY CAPACITORS BY SELECTIVE EPITAXIAL
GROWTH 568
D. LEIPOLD, CH. HECHTL, M SCHIEKHOFER, T. PUCHERT, J. KRICK, D. PROETEL
TEXAS INSTRUMENTS GMBH GERMANY, FREISING, GERMANY
HOT CARRIER EFFECTS AND TIME-DEPENDENT DEGRADATION LAWS IN 0.1PM BULK SI
N-MOSFETS 572
B. MARCHAND, B. SZELAG, G. GHIBAUDO, F. BALESTRA
LPCS, ENSERG, GRENOBLE, FRANCE ENHANCED HOT-CARRIER INDUCED DEGRADATION
IN STI ISOLATED NMOS TRANSISTORS 576
P. SALLAGOITY , A. LABIADH2, J. ALIEU , M. HAOND SGS-THOMSON
MICROELECTRONICS, AGRATE BRIANZA, ITALY FRANCE TELECOM - CNET, MEYLAN,
FRANCE COMPARATIVE HOT CARRIER INDUCED DEGRADATION IN 0,25 PROMOSFETS
WITH H OR D PASSIVATED INTERFACES 580
J.L. AUTRAN1, R.A.B. DEVINE2, W.L. WARREN ,
K. VANHEUSDEN
INSA DE LYON, VILLEURBANNE, FRANCE FRANCE TELECOM -CNET
SANDIA NATIONAL LAB., ALBUQUERQUE, UNITED STATES
EFFECTS OF HIGH TEMPERATURE ON PERFORMANCES AND HOT-CARRIER RELIABILITY
IN DC/AC STRESSED 0.35 UM N-MOSFETS 584
A. BRAVAIX , D, GOGUENHEIM , N. REVIL , M. VARROT , P. MORTINI ISEM
TOULON, FRANCE SGS-THOMSON MICROELECTRONICS, CROLLES, FRANCE
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A STRESS TECHNIQUE SUITABLE FOR THE IN-LINE RELIABILITY MONITORING OFTHE
HOT CARRIER
ENDURANCE OF SUB-0,5UMMOSFETS 588 C. DIMITRIADIS , C. PAPADAS , A.
CONNCANON , N. VILLANI E. VINCENT A. MATHEWSON
NCSR DEMOCRITOS , AGHIA PARASKEVI, GREECE
NMRC, CORK, IRELAND SGS-THOMSON MICROELECTRONICS, CROLLES, FRANCE
SGS-THOMSON MICROELECTRONICS, GRENOBLE, FRANCE STRESS INDUCED LEAKAGE
CURRENT DEPENDENCE ON OXIDE THICKNESS, TECHNOLOGY AND STRESS LEVEL 592
A. SCARPA , P. RIES , G. GHIBAUDO , A. PACCAGNELLA , G. PANANAKAKIS , J.
BRINI , G. GHIDINI , C. PAPADAS* UNIVERSITA DI PADOVA, ITALY
LPCS/ENSERG, GRENOBLE, FRANCE SGS-THOMSON MICROELECTRONICS, AGRATE
BRIANZA, ITALY 4SGS-THOMSON MICROELECTRONICS, CROLLES, FRANCE
A REFLECTIVE-MODE PDLC LIGHTVALVE DISPLAY TECHNOLOGY 596
PH. CACHARELIS, J. FRAZEE, P. MOORE, R. LUTTRELL, R. FLACK NATIONAL
SEMICONDUCTOR COR., SANTA CLARA, UNITED STATES
INTEGRATED ARRAY OF AVALANCHE PHOTODIODES FOR SINGLE-PHOTON COUNTING 600
F. ZAPPA , M. GHIONI , S. COVA , L. VARISCO , B. SINNIS , A.
MORRISON2 A. MATHEWSON POLITECNICO DI MILANO, ITALY NATIONAL
MICROELECTRONIC RESEARCH CENTRE, CORK, IRELAND AL-N-SI DOUBLE-SCHOTTKY
PHOTODIODES FOR OPTICAL STORAGE SYSTEMS 604
M. SETO, J.-V. LEDUC, A.M.F. LAMMERS PHILIPS RESEARCH LABORATORIES,
EINDHOVEN,
NETHERLANDS
GATE BIAS AGING OF UNHYDROGENATED NONCRYSTALLINE SILICON TFTS 608
B. TALA-LGHIL , A. TOUTAH , T. MOHAMMEDBRAHIM , K. MOURGUES2, H.
LHERMITE , F. RAOULT , 0. BONNAUD SITE UNIVERSITAIRE, OCTEVILLE,
FRANCE UNIVERSITE DE RENNES I, FRANCE A NEW STRUCTURE FOR REDUCTION
OFTHE LEAKAGE CURRRENT IN THE LOW TEMPERATURE POLY-SI TFTS FABRICATED BY
THE MILC PROCESS 612
T.-H. IHN, B.-I. LEE, S.-K. JOO SEOUL NATIONAL UNIVERSITY, KOREA (SOUTH)
||IM$|PITAFA{. FTOFT I 3 $&$ FT ILLV, 4 INVESTIGATIONS ON THE INTERNAL
PHYSICAL BEHAVIOUR OF 600V PUNCH-THROUGH IGBT UNDER LATCH-UP AT HIGH
TEMPERATURE 616
S. AZZOPARDI, C. ZARDINI, J.M. VINASSA UNIVERSITE DE BORDEAUX I,
TALCNCE, FRANCE NOISE PERFORMANCES AND HOT CARRIER EFFECTS IN
POLYSILICON THIN FILM TRANSISTORS 620
A. PECORA, S. GIOVANMNI, R. CARLUCCIO, L. MARIUCCI, G. FORTUNATO
IESS-CNR, ROME, ITALY THE PLANAR-DOPED-BARRIER-FET: MOSFET OVERCOMES
CONVENTIONAL LIMITATIONS 624
W. HANSEN , V. RAMGOPAL RAO , 1. EISELE UNIVERSITAT DER BUNDESWEHR
MONCHEN,
NEUBIBERG, GERMANY
UNIVERSITY OFCALIFORNIA, LOS ANGELES, USA
ADVANCED SELF ALIGNED SOI CONCEPTS FOR VERTICAL MOS TRANSISTORS WITH
ULTRASHORT
CHANNEL LENGTHS 628
TH. AEUGLE , L. RISCH1, W. ROSNER , TH. SCHULZ , D. BCHAMMER DAIMLER
BENZ AG, ULM, GERMANY SIEMENS AG, MUNICH, GERMANY CIRCUIT SIMULATION
THROUGH COORDINATED EM AND SOLID-STATE DEVICE NUMERICAL ANALYSES 632
G. STOPPONI, L. ROSELLI, S. BUOMNCONTRI, P. CIAMPOLINI UNIVERSITA DI
PERUGIA, ITALY THEORY AND MODELLING OF ORGANIC FIELD EFFECT TRANSISTORS
636
G. PAASCH , S. SCHEINERT , R. TCCKLCNBURG TECHNISCHE UNIVERSIULT
ILMENAU, GERMANY INST, OF SOLID STATE AND MAT. RES.,
DRESDEN, GERMANY NEW PARAMETER EXTRACTION METHOD FOR THE SIMULATION
OFTHE SPACE CHARGE CREATEDBY FOWLER-NORDHELM ELECTRON INJECTIONS IN THE
GATE OXIDE OF MOS DEVICES 640
G. AURIEL , J.P. DUBUC , B. SAGNCS , J. OUALID , G, GHIBAUDO , P.
BOIVIN
ENSPM, MARSEILLE, FRANCE ENSERG, GRENOBLE, FRANCE SGS-THOMSON
MICROELECTRONICS, ROUSSET, FRANCE
PERFORMANCE LIMITS OF DEEP SUBMICRON BURIED CHANNEL DELTA DOPED MOSFETS
644
K, DIAWUO, A.G. O NEILL UNIVERSITY OFNEWCASTLE, NEWCASTLE UPON TYNE,
UNITED KINGDOM RAPID IC PERFORMANCE YIELD AND DISTRIBUTION PREDICTION
USING A ROTATION OF THE CIRCUIT
PARAMETER PRINCIPALS COMPONENTS 648
J. HORAN , C. LYDETV
CORK REGIONAL TECHNICAL COLLEGE, IRELAND NATIONAL MICROELECTRONICS
RESEARCH CENTRE MEASUREMENT OFCHANNEL LENGTH AND OFF-SET REGION LENGTH
FOR OFF-SET GATEMOSFETS 652
K. TERADA , K. TSUJI . Y. ITOH , M. TAKAHASHF HIROSHIMA CITY
UNIVERSITY, JAPAN NEC CORPORATION, KAWASAKI, JAPAN
IMAGE 10
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EFFICIENT PARAMETER EXTRACTION AND STATISTICAL
ANALYSIS FOR A 0.25PM LOW-POWER CMOS PROCESS 656
E.V. SAAVEDRA DIAZ , K.G. MCCARTHY , D.B.M. KLAASSEN , A. MATHEWSON
NATIONAL MICROELECTRONICS RESEARCH
CENTRE, CORK, IRELAND
PHILIPSRESEARCH LABORATORIES, EINDHOVEN,
NETHERLANDS
COMPARISON OFAN L-ARRAY AND A SINGLE TRANSISTOR METHOD TO EXTRACT LEFT
AND RS IN
DEEP SUBMICRON MOSFEETS 660
S. BIESEMANS, K. DE MEYER IMEC, LEUVEN, BELGIUM A CONSISTENTPARAMETER
EXTRACTION METHOD FOR DEEP SUBMICRONMOSFETS 664
P. KLEIN
SIEMENS AG, MUNICH, GERMANY CLOSED-FORM MODEL OFTHE SUBHALFMICROMETER
LDD MOSFET OVERLAP CAPACITANCE 668
V.I. KOL DYAEV, L, DEFERM
IMEC, LEUVEN, BELGIUM ANALYSIS OF CAPACITANCE BEHAVIOR FOR SHORTCHANNEL
ACCUMULATION-MODE SOIPMOS DEVICES 672
J.B. KUO, K.W. SU
NATIONAL TAIWAN UNIVERSITY, TAIPEI, TAIWAN TWO-DIMENSIONAL ANALYTICAL
MODEL OF SUBTHRESHOLD CURRENT IN FULLY-DEPLETED SOI MOSFETS 676
S. PIDIN, H. KURINO, M. KOYANAGI
TOHOKU UNIVERSITY, SENDAI, JAPAN
PIEZORESISTIVC BRIDGE CONFIGURATION FOR ATOMIC FORCE MICROSCOPY 680
R. JURNPERTZ , A. VAN DER HART , J. SCHELTEN , O. OHLSSON , TH.
SULZBACH , F. SAURENBACH2
FORSEHUNGSZENTRUM JULICH, GERMANY SURFACE IMAGING SYSTEMS GMBH,
HERZOGENRATH, GERMANY NANOSCNSORS GMBH, WETZLAR, GERMANY
A NOVEL GAS SENSOR FOR HYDROCARBONS DETECTION BASED ON POROUS SILICON
PERMEATED WITH SN-V MIXED OXIDES 684
R. ANGELUCCI , A. POGGI , C, CRITELLI , L. DORI1, F. CAVANI , A.
PARISINI ,
A. GARULLI , G.C. CARDINALI1, M. FIORINI1 CNRLAMEL - INSTITUTE,
BOLOGNA, ITALY DIP. DI CHIMICA INDUST E DEI MATERIALI,
BOLOGNA, ITALY ENHANCEMENT OFTFT PERFORMANCE BY LOW
TEMPERATURE OXYGEN ANNEALING 688
P.T. BAINE, L.J. QUINN, B. LEE, S.J.N. MITCHELL, B.M. ARMSTRONG,
H.S. GAMBLE
NORTHERN IRELAND SEMICON. RES. CEN.,
BELFAST, UNITED KINGDOM
VOLTAGE CONTROLLED COLOUR SEPARATION IN TWOTERMINAL A-SI:H BASED SENSOR
STRUCTURES 692 TH. NEIDLINGER, R. BRIIGGEMANN, H. BRUMMACK, M.B.
SCHUBERT
UNIVERSITY OF STUTTGART, GERMANY ON THE DETERMINATION OFTHE
TIME-DEPENDENT DEGRADATION LAWS IN DEEP SUBMICRON SOI MOSFETS 696
S.H. RENN , J.L. PELLOIE , F. BALESTRA
LPCS, ENSERG, GRENOBLE, FRANCE LETI/CEA, GRENOBLE, FRANCE
TWO-STAGE DEGRADATION OFSUBMICRON LDD N-MOSFETS BY 1/FNOISE, CHARGE
PUMPING, AND DRAIN CURRENT MEASUREMENTS 700
S. OKHONIN, L. REN, M. ILEGEMS SWISS FEDERAL INSTITUTE OFTECHNOLOGY,
LAUSANNE, SWITZERLAND
HBM AND CDM ESD STRESS TEST RESULTS IN 0.6 UMCMOS STRUCTURES 704
G. MENEGHESSO , N. GRAPPUTO , P. COLOMBO , M. BRAMBILLA , P. PAVAN , E.
ZANONI
UNIVERSITA DI PADOVA, ITALY
SGS-THOMSON MICROELECTRONICS, AGRATE BRIANZA, ITALY
UNIVERSITA DI MODENA, ITALY HIGH FREQUENCY ANALYSIS OFINP TRANSISTORS
VERSUS TEMPERATURE 708
F. ANIEL , N. ZEROUNIAN , A. ALMEYDA , V. DANELON1, G. VEMET , P.
CROZAT , R. ADDE , J.-C. HARMAND , C. LADNER
UNIVERSITY PARIS-SOUTH, ORSAY, FRANCE
FRANCE TELECOM - CNET-DTD, BAGNEUX, FRANCE
ANALYTICAL MODELING OFINP/INGAAS HBTS 712 H. SHENG , A. REZAZADEH1, D.
WAKE2
KING S COLLEGE LONDON, UNITED KINGDOM 2BT LABORATORY, IPSWICH, UNITED
KINGDOM A NOVEL FUNCTIONAL HETEROSTRUCTURE-ERAITTER AND
HETEROSTRUCTURE-BASE TRANSISTOR (HEHBT) 716
W.-C. LIU,J.-H. TSAI, S.-Y. CHENG, P.-H. LIN, W.-C. WANG, J.-Y. CHEN
NATIONAL CHENG-KUNG UNIVERSITY, TAINAN, TAIWAN
ANALYSIS OFELECTRON SPREADING EFFECTS IN
PIXELLESS QUANTUM WELL IMAGING DEVICES 720
V. RYZHII , H.C. LIU , 1. KHMYROVA , M, RYZHII THE UNIVERSITY OF AIZU,
AIZU-WAKAMATSU
CITY, JAPAN
NATIONAL RESEARCH COUNCIL, OTTAWA, CANADA
PARASITIC BIPOLAR EFFECTS LEADING TO ON-STATE BREAKDOWN IN 2D-MESFETS
724
G. MENEGHESSO , A. NEVIANI , M. PAVESI ,
M. HURT , W.C.B. PEATMAN , M. SHUR C. CANALI , E. ZANONI
UNIVERSITA DI PADOVA, ITALY UNIVERSITY DI PARMA, ITALY
UNIVERSITY OFVIRGINIA, CHARLOTTESVILLE, USA
RENSSELAER POLYTECHNIC INST, TROY,USA UNIVERSITA DI MODENA, ITALY
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A 73 GHZ SIGE SFMMWIC MODULE 728
K.M. STROHM , F. BEISSWANGER2, J.-F. LUY DAIMLER BENZ AG, ULM, GERMANY
TEMIC TEIEFUNKEN MICROELECTRONIC,
HEILBRONN, GERMANY INFLUENCE OF CMOS-CIRCUIT AREAS ON
RF-DAMPING OFGOLD AND ALUMINIUM MICROSTRIPLINE IN COMBINED SIMMWIC-CMOS
TECHNOLOGY 732
D. BECK, E. KASPER UNIVERSITY OFSTUTTGART, GERMANY THE OXIDIZED
AMORPHOUS SILICON IMPROVED LOCAL ISOLATION (OASI-LOCI) CONCEPT 736 S.
DELEONIBUS, M. HEIRZMANN, F, MARTIN, J.-C. GUIBERT
LETI/CEA, GRENOBLE, FRANCE A COST EFFECTIVE SMART POWER TECHNOLOGY FOR
45V APPLICATIONS 740
A. MARTY-BLAVIER, D. FARENC, T. SICARD, G. BLANC, I. PAGES MOTOROLA,
TOULOUSE, FRANCE AS AND B DIFFUSION IN TISI2/POLYSILICON GATES WITH DUAL
WORKFUNCTION GATE TECHNOLOGY 744 A. BERTHOLD , E. HAMMER!1, H. VON
PHILIPSBORN SIEMENS AG, MUNICH, GERMANY 2UNIVERSITY OFREGENSBURG
PATTERNING OFPT/RU02 ELECTRODES FOR PB(ZR,TI)03 IN AN INDUCTIVELY
COUPLED CI2/02 PLASMA 748
S.-G. PARK , J.G. LEE , H.S. JUNG , M.-S. JEON2, D.-K. CHOI2
INHA UNIVERSITY, INCHON, KOREA (SOUTH) 2HANYANG UNIVERSITY, SEOUL,
KOREA (SOUTH) TWO-STEP DEPOSITION METHOD FOR IMPROVEMENT OF THE
ELECTRICAL CHARACTERISTICS OFBSTTHIN
FILMS 752
D.-S.KIL, B.-I. LEE, S.-K.J00
SEOUL NATIONAL UNIVERSITY, KOREA (SOUTH) C-V CHARACTERISTICS
OFPT/SRBI2TA209/CE02/SI STRUCTURE FOR NON-VOLATILEMEMORY DEVICES 756
H.N. LEE , D.S. SHIN , Y.T. KIM , S.H-CHOH2 KOREA INST, OFSCIENCE AND
TECHNOL., SEOUL, KOREA (SOUTH) KOREA UNIVERSITY LASER INDUCED
REVERSIBLE CHANGE OF ELECTRICAL RESISTIVITY OFCOSL2 THIN FILM 760
M. KNITE, A. MEDVID , Y. BARLOTI, M. SILARAYS RIGA TECHNICAL UNIVERSITY,
LATVIA
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| indexdate | 2024-07-09T18:29:34Z |
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| spelling | ESSDERC 27 1997 Stuttgart Verfasser (DE-588)5278067-3 aut Proceedings of the 27th European Solid-State Device Research Conference Stuttgart, Germany, 22 - 24 September 1997 ; ESSDERC' 97 Ed. by H. Grünbacher ESSDERC' 97 Paris Ed. Frontieres 1997 XVI, 767 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Circuits intégrés - Congrès ram Semiconducteurs - Congrès ram Électronique de l'état solide - Congrès ram Semiconductors Congresses Solid state electronics Congresses (DE-588)1071861417 Konferenzschrift gnd-content Grünbacher, Herbert Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008523873&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the 27th European Solid-State Device Research Conference Stuttgart, Germany, 22 - 24 September 1997 ; ESSDERC' 97 Circuits intégrés - Congrès ram Semiconducteurs - Congrès ram Électronique de l'état solide - Congrès ram Semiconductors Congresses Solid state electronics Congresses |
| subject_GND | (DE-588)1071861417 |
| title | Proceedings of the 27th European Solid-State Device Research Conference Stuttgart, Germany, 22 - 24 September 1997 ; ESSDERC' 97 |
| title_alt | ESSDERC' 97 |
| title_auth | Proceedings of the 27th European Solid-State Device Research Conference Stuttgart, Germany, 22 - 24 September 1997 ; ESSDERC' 97 |
| title_exact_search | Proceedings of the 27th European Solid-State Device Research Conference Stuttgart, Germany, 22 - 24 September 1997 ; ESSDERC' 97 |
| title_full | Proceedings of the 27th European Solid-State Device Research Conference Stuttgart, Germany, 22 - 24 September 1997 ; ESSDERC' 97 Ed. by H. Grünbacher |
| title_fullStr | Proceedings of the 27th European Solid-State Device Research Conference Stuttgart, Germany, 22 - 24 September 1997 ; ESSDERC' 97 Ed. by H. Grünbacher |
| title_full_unstemmed | Proceedings of the 27th European Solid-State Device Research Conference Stuttgart, Germany, 22 - 24 September 1997 ; ESSDERC' 97 Ed. by H. Grünbacher |
| title_short | Proceedings of the 27th European Solid-State Device Research Conference |
| title_sort | proceedings of the 27th european solid state device research conference stuttgart germany 22 24 september 1997 essderc 97 |
| title_sub | Stuttgart, Germany, 22 - 24 September 1997 ; ESSDERC' 97 |
| topic | Circuits intégrés - Congrès ram Semiconducteurs - Congrès ram Électronique de l'état solide - Congrès ram Semiconductors Congresses Solid state electronics Congresses |
| topic_facet | Circuits intégrés - Congrès Semiconducteurs - Congrès Électronique de l'état solide - Congrès Semiconductors Congresses Solid state electronics Congresses Konferenzschrift |
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