Extended abstracts of the 1992 International Conference on Solid State Devices and Materials: August 26 - 28, 1992, Tsukuba, Tsukuba Center Building
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Tokyo
Japan Society of Applied Physics
1992
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXVIII, 772 S. Ill., graph. Darst. |
| ISBN: | 4930813506 |
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| 245 | 1 | 0 | |a Extended abstracts of the 1992 International Conference on Solid State Devices and Materials |b August 26 - 28, 1992, Tsukuba, Tsukuba Center Building |
| 246 | 1 | 3 | |a Solid state devices and materials |
| 264 | 1 | |a Tokyo |b Japan Society of Applied Physics |c 1992 | |
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| adam_text | IMAGE 1
EXTENDED ABSTRACTS OF
THE 1992 INTERNATIONAL CONFERENCE ON
SOLID STATE DEVICES AND MATERIALS
AUGUST 26-28, 1992
TSUKUBA
TSUKUBA CENTER BUILDING
SPONSORED BY
THE JAPAN SOCIETY OF APPLIED PHYSICS
IN COOPERATION WITH
THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS OF
JAPAN IEEE ELECTRON DEVICES SOCIETY IEEE TOKYO SECTION THE INSTITUTE OF
ELECTRICAL ENGINEERS OF JAPAN
THE ELECTROCHEMICAL SOCIETY OF JAPAN THE INSTITUTE OF TELEVISION
ENGINEERS OF JAPAN
IMAGE 2
CONTENTS
AUGUST 26, WEDNESDAY
ROOM A
A-0: OPENING SESSION (9:40-12:15)
9:40 (0) WELCOME ADDRESS Y. NANNICHI, ORGANIZING COMMITTEE CHAIRMAN 9:50
(1) ONE HUNDRED YEARS OF SEMICONDUCTOR-DEVICE DEVELOPMENTS (1874-1974)
(INVITED) S.M. SZE, NAT L CHIAO TUNG UNIV., TAIWAN, CHINA 1
10:40 (2) A PERSPECTIVE ON NEXT GENERATION SILICON DEVICES (INVITED) T.
SUGANO, TOYO UNIV. AND RIKEN, JAPAN 7
11:20 (3) OPTOELECTRONIC DEVICE AND MATERIAL TECHNOLOGIES FOR
PHOTOELECTRONIC VLSI SYSTEMS (INVITED)
I. HAYASHI, OPTOELECTRONICS TECH. RES., JAPAN 10
12:00 (4) SSDM AWARDS PRESENTATION
A-L: SI PROCESSES I (14:00-15:50)
14:00 (1) A NEW HORIZON OF PLASMA ENHANCED CVD FOR FUTURE ELECTRON
DEVICES (INVITED) M. HIROSE, H. SHIN AND S. MIYAZAKI, HIROSHIMA UNIV.,
JAPAN 13
14:30 (2) LOW-TEMPERATURE (625C) SILICON EPITAXIAL GROWTH ON SILICON
SUBSTRATES HEATED-UP IN SIH4 ATMOSPHERE K. KOBAYASHI, K. FUKUMOTO, T.
KATAYAMA, T. HIGAKI AND H. ABE, MITSUBISHI, JAPAN.... 17
14:50 (3) SILICON EPITAXIAL GROWTH BY A FAST WAFER ROTATING REACTOR
USING SILANE GAS Y. SATO, T. TAMURA AND T. OHMINE, TOSHIBA, JAPAN 20
15:10 (4) LATERAL SOLID PHASE EPITAXY OF AMORPHOUS SI FILMS UNDER
ULTRAHIGH PRESSURE H. ISHIWARA, H. WAKABAYASHI, K. MIYAZAKI*, K. FUKAO**
AND A. SAWAOKA, TOKYO INST. TECH., *CANON AND HITACHI, JAPAN 23
15:30 (5) CONTROL OF INTERSTITIAL DENSITY IN THE PREAMORPHIZED SI BY
CARBON IMPLANTATION S. NISHIKAWA AND T. YAMAJI, OKI, JAPAN 26
A-2: SI PROCESSES II (16:10-18:10)
16:10 (1) CONTROL OF SI SOLID-PHASE NUCLEATION BY SURFACE STEPS FOR HIGH
PERFORMANCE THIN FILM TRANSISTORS
T. ASANO AND K. MAKIHIRA, KYUSHU INST. TECH., JAPAN 29
16:30 (2) SOLID-PHASE NUCLEATION CONTROL OF AMORPHOUS SI BY
STEP-STRUCTURE OF SUBSTRATE SURFACE AND LOCAL P-DOPING M. MONIWA, K.
KUSUKAWA, M. OHKURA AND E. TAKEDA, HITACHI, JAPAN 32
16:50 (3) OXYGEN PRECIPITATION CONTROL BY HYDROGEN AND PREANNEALING AT
425C IN CZOCHRALSKI SILICON CRYSTALS
A. HARA, M. AOKI, T. FUKUDA AND A. OHSAWA, FUJITSU LABS., JAPAN 35
17:10 (4) DISLOCATION ENGINEERING FOR SILICON DEVICES J.S. CUSTER, J.R.
LIEFTING, R.J. SCHREUTELKAMP, R.C.M. WIJBURG*, H. WALLINGA* AND
F.W. SARIS, FOM AND *UNIV. TWENTE, THE NETHERLANDS 38
17:30 (5) MOLECULAR SCALE RESIST SIMULATION AND MEASUREMENT FOR PATTERN
FLUCTUATION ANALYSIS E.W. SCHECKLER, S. SHUKURI AND E. TAKEDA, HITACHI,
JAPAN 40
17:50 (6) PROCESSING UNIFORMITY IMPROVEMENT BY MAGNETIC FIELD
DISTRIBUTION CONTROL IN ELECTRON CYCLOTRON RESONANCE PLASMA CHAMBER H.
NISHIMURA, M. KIUCHI AND S. MATSUO, NTT, JAPAN 43
XLLL
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ROOM B
B-L: SI DEVICES I (14:00-15:30)
14:00 (1) LOW-TEMPERATURE CVD OF AMORPHOUS-SILICON AND SILICON-NITRIDE-A
NEW TREND OF TFT TECHNOLOGY- (INVITED) M. MATSUMURA AND O. SUGIURA,
TOKYO INST. TECH., JAPAN 46
14:30 (2) HIGH-PERFORMANCE POLY-SI THIN-FILM TRANSISTORS WITH
EXCIMER-LASCR ANNEALED SILICONNITRIDE GATE
K. SHIMIZU, M. HIGASHIMOTO, K. NAKAMURA, O. SUGIURA AND M. MATSUMURA,
TOKYO INST. TECH., JAPAN 49
14:50 (3) A SIMPLE POLYSILICON THIN FILM TRANSISTOR STRUCTURE FOR
ACHIEVING HIGH ON/OFT CURRENT RATIO INDEPENDENT OF GATE BIAS J. KANICKI
AND M.K. HATALIS*, IBM AND *LEHIGH UNIV., U.S.A 52
15:10 (4) A FABRICATION OF HOMOGENIOUS POLY-SI TFT S USING EXCIMER LASER
ANNEALING I. ASAI, N. KATO, M. FUSE AND T. HAMANO, FUJI XEROX, JAPAN 55
B-2: SI DEVICES II (15:50-17:50)
15:50 (1) TWO-DIMENSIONAL CONTACT-TYPE IMAGE SENSOR USING AMORPHOUS
SILICON PHOTO-TRANSISTOR M. YAMAGUCHI, Y. KANEKO AND K. TSUTSUI,
HITACHI, JAPAN 58
16:10 (2) NEW DRAIN CONDUCTANCE METHOD TO EVALUATE IMPACT IONIZATION
PHENOMENON IN SOI MOSFET H. KURINO, T. HASHIMOTO, K. HATA, H. KIBA, Y.
YAMAGUCHI*, T. NISHIMURA* AND M. KOYANAGI, HIROSHIMA UNIV. AND
*MITSUBISHI, JAPAN 61
16:30 (3) ENERGY TRANSPORT SIMULATION WITH QUASI THREE-DIMENSIONAL
TEMPERATURE ANALYSIS FOR SOI MOSFET H. KIBA, H. KURINO, T. HASHIMOTO, H.
MORI, K. YAMAGUCHI* AND M. KOYANAGI, HIROSHIMA UNIV. AND *HITACHI, JAPAN
64
16:50 (4) ULTRA-THIN OXIDE/NITRIDE/OXIDE/NITRIDE MULTILAYER FILMS FOR
MEGABIT DRAM CAPACITORS S. OHNISHI, H. WATANABE, S. ADACHI, N. AOLO AND
T. KIKKAWA, NEC, JAPAN 67 17:10 (5) PHOSPHORUS-IMPLANTED POLYSILICON
EMITTERS WITH HIGH EMITTER EFFICIENCY A. PRUIJMBOOM, W.T.A. VAN DEN
EINDEN, D.B.M. KLAASSCN, J.W. SLOTBOOM, G.
STREUTKER, A.E.M. DE VEIRMAN AND P.C. ZALM, PHILIPS, THE NETHERLANDS 70
17:30 (6) LOCAL ZENER PHENOMENON-A MECHANISM OF P-N JUNCTION LEAKAGE
CURRENT- K. OHYU AND A. HIRAIWA, HITACHI, JAPAN 73
ROOM C
C-L: CRYSTAL GROWTH AND DEVICES (14:00-16:00)
14:00 (1) SURFACE PROCESS IN MIGRATION-ENHANCED EPITAXY (INVITED) Y.
HORIKOSHI, NTT, JAPAN 76
14:30 (2) ELECTRICAL CHARACTERIZATION AND ANALYSIS OF LATERAL P-N
INTERFACES GROWN ON (111)A GAAS NONPLANAR SUBSTRATES BY MOLECULAR BEAM
EPITAXY M. INAI, T. YAMAMOTO, M. FUJII, D. LOVELL, A. SHINODA, K.
FUJITA, T. TAKEBC AND K. KOBAYASHI, ATR, JAPAN 79
14:50 (3) STEP ORDERING DURING FRACTIONAL-LAYER SUPERTALTICE GROWTH ON
GAAS(OOL) VICINAL SURFACES BY METALORGANIC CHEMICAL VAPOR DEPOSITION H.
SAITO, K. UWAI AND Y. TOKURA, NTT, JAPAN 82
15:10 (4) IN SITU INTERFACE CONTROL OF PSEUDOMORPHIC INAS/LNP SQWS
GROWTH BY SURFACE PHOTOABSORPTION Y. KOBAYASHI AND N. KOBAYASHI, NTT,
JAPAN 85
15:30 (5) SUPER-HIGH EFFICIENCY SOLAR CELLS: PRESENT AND FUTURE
(INVITED) J.C.C. FAN, KOPIN, U.S.A 88
XIV
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ROOM D
D-L: INTERCONNECTION (14:00-16:10) 14:00 (1) QUARTER-MICRON
INTERCONNECTION TECHNOLOGIES FOR 256M DRAMS (INVITED) T. KIKKAWA, NEC,
JAPAN 90
14:30 (2) STUDY OF A VEIL STRUCTURE AND A TWO-STEP CORROSION SUPPRESSION
PROCESS IN AL-SI-CU ETCHING K. SAKUMA, S. YAGI AND K. IMAI, NTT, JAPAN
93
14:50 (3) SUBMICRON SI02 HOLE FILLING CHARACTERISTICS EMPLOYING ECR AL
SPUTTERING WITH HIGH MAGNETIC FIELD N. MORIMOTO, S. TAKEHIRO, Y. MATSUI,
I. UENOMIYA, H. SHINDO*, S. SHINGUBARA AND Y. HORIIKE, HIROSHIMA UNIV.
AND *FUKUYAMA UNIV., JAPAN 96
15:10 (4) THE IMPROVEMENT OF CVD-WSIS PROCESS BY PREHEATING METHOD T.
SAITO, Y. YUYAMA*, Y. EGASHIRA, Y. SHIMOGAKI, K. SUGAWARA* AND H.
KOMIYAMA, UNIV. TOKYO AND *HITACHI VLSI ENG., JAPAN 99
15:30 (5) LOW RESISTANCE AND THERMALLY STABLE TI-SILICIDED SHALLOW
JUNCTION FORMED BY ADVANCED 2-STEP RAPID THERMAL PROCESSING AND ITS
APPLICATION TO DEEP SUBMICRON CONTACT H. KOTAKI, K. MITSUHASHI, J.
TAKAGI, Y. AKAGI AND M. KOBA, SHARP, JAPAN 102
15:50 (6) THE SUPPRESSION OF PRECIPITATION IN
BORO-PHOSPHO-SILICATE-GLASS FILMS BY SURFACE CONTROL BY SILYLATION (SCS)
PROCESS K. YANO, Y. TERAI, S. IMAI, T. UEDA, S. UEDA, M. ENDOH AND N.
NOMURA, MATSUSHITA, JAPAN 105
ROOM A
POSTER PREVIEW (9:15-10:45)
PA1 SYMPOSIUM V: SURFACE SCIENCE AND ENGINEERING OF SI
(1) THE INITIAL STAGES OF THE THERMAL OXIDATION OF SI(001) 2X L SURFACE
STUDIED BY SCANNING
TUNNELING MICROSCOPY M. UDAGAWA, M. NIWA AND I. SUMITA, MATSUSHITA,
JAPAN 108
(2) INITIAL STAGE OF SI02/SI INTERFACE FORMATION ON SI(LLL) SURFACE
Y. TAMURA, K. OHISHI, H. NOHIRA AND T. HATTORI, MUSASHI INST. TECH.,
JAPAN ILL (3) IN-SITU CHARACTERIZATION OF SI SURFACE OXIDATION BY
HIGH-SENSITIVITY INFRARED REFLECTION
SPECTROSCOPIC METHOD IN VACUUM CHAMBER M. NISHIDA, Y. MATSUI, M. OKUYAMA
AND Y. HAMAKAWA, OSAKA UNIV., JAPAN 114 (4) NANOMETER RESOLUTION
MEASUREMENT OF DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS WITH
AFM/STM Y. FUKANO, Y. SUGAWARA, S. MORITA, Y. YAMANISHI* AND T. OASA*,
HIROSHIMA UNIV. AND SUMITOMO METAL, JAPAN 117
(5) PREOXIDE-CONTROLLED OXIDATION FOR VERY THIN GATE OXIDE
K. MAKIHARA, A. TERAMOTO, K. NAKAMURA, M. MORITA AND T. OHMI, TOHOKU
UNIV., JAPAN 120
(6) CRITICAL PARAMETERS FOR OBTAINING LOW PARTICLE DENSITIES IN AN
HF-LAST PROCESS
J.L. ALAY, S. VERHAVERBEKE, W. VANDERVORST AND M. HEYNS, IMEC, BELGIUM
123 (7) MEASUREMENT OF PHYSICAL THICKNESS OF NATIVE OXIDE USING
ACCURATELY-CALIBRATED ATOMIC
FORCE MICROSCOPE S. AOYAMA, Y. NAKAGAWA AND T. OHMI, TOHOKU UNIV., JAPAN
126
(8) CHARACTERIZATION OF HF-TREATED SI SURFACES BY PHOTOLUMINESCENCE
SPECTROSCOPY AND SCANN
ING TUNNELING MICROSCOPY
T. KONISHI, K. UESUGI, S. KAWANO, T. YAO, H. OHSHIMA*, H. ITO* AND T.
HATTORI*, HIROSHIMA UNIV. AND *NIPPONDENSO, JAPAN 129
XV
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(9) SILANE THERMAL DECOMPOSITION CHARACTERISTICS ON VARIOUS SI SURFACE
T. WATANABE, M. NAKAMURA, A. OHKI, K. KAWADA, S. MIYO.SHI, S. TAKAHASHI,
M.S.K. CHEN AND T. OHMI, TOHOKU UNIV., JAPAN 132
(L10) AFM/STM INVESTIGATION OF PN JUNCTIONS FORMED BY ION IMPLANTATION
Y. SUGAWARA, Y. FUKANO, S. MORITA, A. NAKANO* AND T. IDA*, HIROSHIMA
UNIV. AND *SHARP, JAPAN 135
PA2 SI DEVICES
(1) DYNAMIC SHIELDING OF SUBSTRATE BIAS EFFECTS ON ELECTRICAL
CHARACTERISTICS OF HIGH VOLTAGE
IGBTS ON SOI A. NAKAGAWA, T. MATSUDAI AND I. OMURA, TOSHIBA, JAPAN 137
(2) A HIGH SPEED, LOW POWER P-CHANNCL FLASH EEPROM USING SILICON RICH
OXIDE AS TUNNEL
ING DIELECTRIC C.C.-H. HSU, A. ACOVIC*, L. DORI*, B. WU*, T. LII*, D.
QUINLAN*. D. DIMARIA*, Y. TAUR*, M. WORDEMAN* AND T. NING*, NAT L
TSING-HUA UNIV., TAIWAN, CHINA AND *IBM, U.S.A 140
(3) A SIMPLE MODEL TOR THE SWITCHING BEHAVIOR OF A SONOS EEPROM DEVICE
J.K. LIN, C.Y. CHANG, T.S. HO* AND H.S. HUANG*, NAT L CHIAOTUNG UNIV.
AND *UNITCD MICROELECTRONICS, TAIWAN, CHINA 143
(4) NITROGEN DANGLING BONDS IN HYDROGENATED AMORPHOUS SILICON NITRIDE
THIN FILMS
J. KANICKI, W.L. WARREN* AND E.H. POINDEXTER**, IBM, *SANDIA NAT L LABS,
AND **U.S.
ARMY TECH., U.S.A 146
(5) WITHDRAWN
(6) INTERFACE STATE GENERATION AND ANNIHILATION IN THIN FILM P-CHANNCL
MOSFETS
Q.D.M. KHOSRU, N. YASUDA, K. TANIGUEHI AND C. HAMAGUCHI, OSAKA UNIV.,
JAPAN 149 (7) THE EFFECT OF ION SHOWER DOPING CONDITIONS ON ELECTRICAL
PROPERTIES OF AMORPHOUS SILICON
AND THIN FILM TRANSISTORS R. KAKKAD, T. SHIMANO AND N. IBARAKI, TOSHIBA,
JAPAN 152
(8) BIAS-STRESS-INDUCCCL STRETCHCD-EXPONENTIAL TIME DEPENDENCE OF CHARGE
INJECTION AND TRAP
PING IN AMORPHOUS SILICON THIN-FILM TRANSISTORS F.R. LIBSCH AND J.
KANICKI, IBM, U.S.A 155
(L9) SUBTHRESHOLD SLOPE IN ULTRA THIN-FILM SOI MOSFET S AND ITS
TWO-DIMENSIONAL ANALYTICAL
MODELING DOWN TO 0.1//M GATE LENGTH H.O. JOACHIM, Y. YAMAGUCHI, K.
ISHIKAWA, T. NISHIMURA AND K. TSUKAMOTO, MI TSUBISHI, JAPAN 158
(L10) IMPACT OF LOW-ENERGY ION-IMPLANTATION ON DEEP-SUBMICRON
PHOSPHORUS-LDD N MOSFETS
T. IZAWA, K. WATANABE AND S. KAWAMURA, FUJITSU, JAPAN 160
(LI 1) SILICON NITRIDEFILM FOR HIGH-MOBILITYTHIN-FILM TRANSISTOR BY
HYBRID-EXCITATION CHEMICAL VAPOR DEPOSITION S. YAMAMOTO AND M. MIGITAKA,
TOYOTA TECH. INST., JAPAN 162
PA3 HOT CARRIER/DIELECTRICS
(1) AN ANALYTICAL MODEL FOR SUBSTRATE AND GATE CURRENT OF STRESSED
SC-PMOSFET IN THE SATURATION REGION K.S. YANG, J.T. PARK* AND B.R. KIM,
YONSEI UNIV. AND *INCHEON UNIV., KOREA 164 (2) DETERMINATION OF THE
INTERFACE TRAP DENSITY IN MOSFETS FROM THE SUBTHRESHOLD SLOPE
MEASUREMENT J.-S. LYU, K.-S. NAM AND C. LEE*, ELEC. TELECOMM. AND
*KAIST, KOREA 167
(3) A CLOSED-LOOP EXTRACTION OF THE SPATIAL DISTRIBUTION OF INTERFACE
TRAPS BASED ON NUMERICAL MODEL OF THE CHARGE-PUMPING EXPERIMENT P. HABAS
AND S. SELBERHERR, TECH. UNIV. VIENNA, AUSTRIA 170
(4) CHANNEL HOT-CARRIER PROGRAMMING IN EEPROM DEVICES C.-Y. WU, Y.-F.
LIN, L.-C. PERNG AND S.-H. HWANG*, NAT L CHIAO TUNG UNIV. AND *FIUALON
MICROELEC, TAIWAN, CHINA 173
XVI
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PA4 INTERCONNECTION
(1) LATERAL EPITAXIAL GROWTH OF SPUTTERED AL(LLO) OVER SI02 AND ITS
ELECTROMIGRATION CHARACTERISTICS
S. YOKOYAMA, H. ICHIKAWA, S. SHINGUBARA AND M. KOYANAGI, HIROSHIMA
UNIV., JAPAN... 176 (2) NOVEL MICRODOPED AL ALLOYS FOR HIGHLY RELIABLE
THIN FILM INTERCONNECTS A.N. PRIYMAK, INST. MICROELEC. TECH. PROBLEMS &
HIGH PURIRY MATERIALS, RUSSIA 179 (3) INFLUENCE OF INTERFACE STRUCTURE
BETWEEN OVERLAYER TIN AND AL ON MULTILAYERED INTERCON
NECTS
M. KAGEYAMA, Y. TATARA AND H. ONODA, OKI, JAPAN 181
(4) 0.4 /IM CONTACT WITH LOWER RESISTIVITY METALLIZATION TECHNOLOGY FOR
ULSI APPLICATIONS M. SEKINE, N. ITOH, T. AKIMOTO, T. SHINMURA, D.T.C.
HUO*, Y. KAKUHARA, K. KAJIYANA, Y. YAMADA, K. YAMAZAKI AND Y. MURAO,
NEC, JAPAN AND *AT&T, U.S.A 184
SYMPOSIUM V: SURFACE SCIENCE AND ENGINEERING OF SI (14:00-18:00)
14:00 (1) ADVANCED SI-SURFACE PREPARATION TECHNIQUES FOR IMPROVED GATE
OXIDE INTEGRITY (INVITED) M. HEYNS, M. MEURIS, S. VERHAVERBEKE, P.W.
MERTENS, A. PHILIPOSSIAN*, D. GRAF** AND A. SCHMEGG**, IMEC, BELGIUM,
*DIGITAL EQUIP., U.S.A. AND **WACKER-CHEMITRO., F.R.G 187
14:30 (2) XPS CHARACTERIZATION OF SI02/SI INTERFACES (INVITED) T.
HATTORI, MUSASHI INST. TECH., JAPAN 190
15:00 (3) ULTRA CLEAN SURFACE PREPARATION USING OZONIZED ULTRAPURE WATER
T. ISAGAWA, M. KOGURE, T. IMAOKA AND T. OHMI, TOHOKU UNIV., JAPAN 193
15:20 (4) STM STUDY OF THERMAL OXIDATION PROCESS ON SI(L 11)7X7 SURFACES
Y. ONO AND M. TABE, NTT, JAPAN 196
15:40 (5) A NOVEL CONTACTLESS AND NONDESTRUCTIVE MEASUREMENT METHOD OF
SURFACE RECOMBINATION VELOCITY ON SILICON SURFACES BY PHOTOLUMINESCENCE
T. SAITOH, Y. NISHIMOTO, T. SAWADA AND H. HASEGAWA, HOKKAIDO UNIV.,
JAPAN 199
16:20 (6) ADVANCED LOW-TEMPERATURE PROCESSING OF GATE OXIDE FOR ULSI
FABRICATION (INVITED) R.J. MARKUNAS, CENTER SEMICOND. RES., U.S.A 202
16:50 (7) THE SELECTIVE GROWTH OF LPCVD-SI3N4 ON CLEANED SI SURFACE N.
INOUE, M. ITOH, H. TAMURA, N. HIRASHITA AND M. YOSHIMARU, OKI, JAPAN 205
17:10 (8) AREA SELECTIVE ALUMINUM PATTERNING BY ATOMIC HYDROGEN RESIST
K. TSUBOUCHI, K. MASU AND K. SASAKI, TOHOKU UNIV., JAPAN 208
17:30 (9) SCHOTTKY BARRIER HEIGHTS OF ATOMICALLY-CONTROLLED
SILICIDE/SILICON INTERFACES (INVITED) R.T. TUNG, J.P. SULLIVAN* AND F.
SCHREY, AT&T AND *UNIV. PENNSYLVANIA, U.S.A 211
ROOM C
POSTER PREVIEW (9:00-11:00)
PC1 OPTICAL DEVICES
(1) HIGH BANDWIDTH METAL-SEMICONDUCTOR-METAL PHOTODIODES WITH INTEGRATED
FABRY-PEROT
RESONATOR FOR WDM RECEIVERS W. KOWALSKY AND U. PRANK, UNIV. ULM, F.R.G
214
(2) NANOSCALE SUB-PICOSECOND METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
S.Y. CHOU, M.Y. LIU, W. KHALIL, P.B. FISCHER, T.Y. HSIANG*, S.
ALEXANDROU* AND R.
SOBOLEWSKI*, UNIV. MINNESOTA AND *UNIV. ROCHESTER, U.S.A 217
(3) A SUBPICOSECOND HETEROBARRIER MSM-PHOTODETECTOR
E.S. VON KAMIENSKI, H.G. ROSKOS, S.V. AVERIN, H.-J. GEELEN, A. KOHL, B.
SPANGENBERG, H. KURZ AND O. HOLLRICHER*, TECH. UNIV. AACHEN AND *INST.
SCHICHT- IONENTECH., F.R.G- 220
(4) A PANEL-TYPE SEMICONDUCTOR OPTICAL MODULATOR BY USING ELECTRON
DEPLETING ABSORPTION
CONTROL Y. KUWAMURA, M. YAMADA AND M. SUZUMI, KANAZAWA UNIV., JAPAN 223
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(5) MICROWAVE-LIGHT-MICROWAVE TRANSFORMATION IN OPTICAL LINE BASED ON
MAGNETOOPTICAL
MODULATOR Y.K. FETISOV, A.A. KLIMOV AND V.L. PREOBRAZHENSKY, MOSCOW
INST. RADIO ENG., RUSSIA... 226 (6) PICOSECOND EXCITONIC OPTICAL
BISTABILITY IN ZNSE-ZNTC/GAAS MQWS ON REFLECTION AT
ROOM TEMPERATURE D.Z. SHEN, X.W. FAN, Z.S. PIAO AND B.J. YANG, ACADEMIA
SINICA, CHINA 229 (7) STUDY OF NONLINEAR OPTICAL PROPERTIES OF C6*
BENZENE SOLUTION
H. FEI, L. HAN, Z. HU, Z. WEI, H. YANG, D. XIAO AND M. LI, JILIN UNIV.,
CHINA 232 (8) FABRICATION OF AN ABSORPTIVE-GRATING GAIN-COUPLED DFB
LASER WITH AN OPTIMIZED DUTY
FACTOR
H.L. CAO, Y. LUO*, Y. NAKANO, K. TADA, M. DOBASHI* AND H. HOSOMALSU*,
UNIV.
TOKYO AND *OPTICAL MEASUR. TECH. DEV., JAPAN 234
(9) HIGH TEMPERATURE (80C) 100 MW OPERATION OF INGAALP VISIBLE LASER
DIODES
M. OKAJIMA, K. NITTA, Y. NISHIKAWA, K. ITAYA AND G. HATAKOSHI, TOSHIBA,
JAPAN 237 (10) STRAINED SINGLE QUANTUM WELL ALGALNP LASER DIODES WITH AN
ASYMMETRIC WAVEGUIDING
LAYER S. KAWANAKA, T. TANAKA, H. YANAGISAWA, S. YANO AND S. MINAGAWA,
HITACHI, JAPAN .. .240
(11) HIGH EFFICIENCY INGAAS/INGAASP COMPRCSSIVCLY STRAINED
MULLI-QUANTUM-WELL LASER
DIODE S. OGITA, H. KOBAYASHI, T. HIGASHI, O. AOKI, N. OKAZAKI AND H.
SODA, FUJITSU LABS.,
JAPAN 243
(12) TIME-RESOLVED STUDY ON THE IMPACT-EXCITED 1.54/ M EMISSION OF ER1
IONS IN INP AND ITS
EXCITATION AND QUENCHING MECHANISMS T. KIMURA, H. ISSHIKI*, H. ISHIDA,
S. YUGO, R. SAITO AND T. IKOMA**, UNIV. ELEETRO COMM., *RIKEN AND
**UNIV. TOKYO, JAPAN 246
(13) FELES: A NEW 2D SOFTWARE DESIGN TOOL FOR OPTOELECTRONIC DEVICES
G.L. TAN, K. LEE AND J.M. XU, UNIV. TORONTO, CANADA 249
(14) HYDROGENATCD AMORPHOUS SILICON CARBIDE PHOTORECEPTOR FOR
PHOTOADDRCSSED SPATIAL LIGHT MODULATOR K. AKIYAMA, A. TAKIMOTO AND H.
OGAWA, MATSUSHITA, JAPAN 252
(L15) ELECTRIC-FIELD DEPENDENT OPTICAL ABSORPTION IN AN INALAS/LNP TYPE
II SUPCRLATTICC H. KOBAYASHI, Y. KAWAMURA AND H. IWAMURA, NTT, JAPAN 255
PC2 GROWTH AND PROCESS TECHNOLOGIES
(1) DEEP LEVEL CHARACTERIZATION OF SUBMILLIMELER-WAVE GAAS SCHOTTKY
DIODES PRODUCED BY A NOVEL IN-SITU ELECTROCHEMICAL PROCESS T. HASHIZUME,
H. HASEGAWA*, T. SAWADA*. A. GRUB** AND H.L. HARTNAGCL**, HOKKAIDO
POLYTECH. COLLEGE, *HOKKAIDO UNIV., JAPAN AND **TECH. HOCHSCHULE
DARMSTADT,
F.R.G 257
(2) BROAD AREA ELECTRON BEAM ENHANCED PASSIVATION TREATMENT OF SULFUR
SURFACE OF GAAS
Y.C. DU, H. WANG, D.C. SUN AND F.M. LI, FUDAN UNIV., CHINA 260
(3) REDUCTION OF SURFACE STATE DENSITY IN INP BY LASER IRRADIATION H.
NAKANISHI AND K. WADA, NTT, JAPAN 263
(4) SURFACE PASSIVATION OF IN*.52ALO.48AS USING (NH4)2SX AND
P2S5/(NH,,)2S N. YOSHIDA, J. INO AND S. MALSUMOTO, KCIO UNIV., JAPAN 267
(5) ETCH MASK PASSIVATION AND ETCHING OF 1II/V COMPOUNDS BY CO ION
BEAMS B. KEMPF, TELEKOM, F.R.G 271
(6) EFFECTIVE SURFACE PASSIVATION OR GAAS BY USING ELECTROCHEMICAL
SULFURI/.ED TRCATMENL X.Y. HOU, Z.S. LI, W.Z. CAI, X.M. DING AND X.
WANG, FUDAN UNIV., CHINA 272 (7) ATOMIC LAYER EPITAXY OF ALAS USING
TRIMCTHYLAMINE-ALANE AND TRIS-DIMETHYLAMINOARSCNIC
K. FUJII, I. SUEMUNE AND M. YAMANISHI, HIROSHIMA UNIV., JAPAN 275
(8) NON-PSEUDOMORPHIC STRAINED-LAYER MULTIPLE QUANTUM WELLS TOR DEVICE
APPLICATIONS S. NIKI, Y. MAKITA, A. YAMADA AND A. OBARA, ETL, JAPAN 278
(9) GROWTH OF NANOSCALE INP ISLANDS BY VPE FOR QUANTUM BOX STRUCTURES J.
AHOPELTO, A.A. YAMAGUCHI, K. NISHI, A. USUI AND H. SAKAKI, JRDC, JAPAN
281
XVIII
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(10) SB/GASB MULTILAYER STRUCTURES FOR POTENTIAL APPLICATION AS AN
INDIRECT NARROW BANDGAP MATERIAL
T.D. GOLDING, J.A. DURA, W.C. WANG, J.T. ZBOROWSKI, D.C. CHEN, Z. ZOU,
J.H. MILLER, JR. AND J.R. MEYER*, UNIV. HOUSTON AND *NRL, U.S.A 284
(11) IMPURITY BREAKDOWN AND CURRENT FILAMENTATION IN MBE GROWN GAAS WITH
PARALLEL
MONOLAYER DOPING H. KOSTIAL, T. IHN, M. ASCHE, R. HEY, K. PLOOG AND F.
KOCH*, PAUL-DRUDE-INST. FESTKORPERELEKTRONIK AND *TECH. UNIV. MIINCHEN,
F.R.G 287
(12) MINORITY-CARRIER LIFETIME IN HEAVILY DOPED GAAS:C A.P. HEBERLE, U.
STRAUFL, W.W. RUHLE, K.H. BACHEM*, T. LAUTERBACH* AND N. HAEGEL**,
MAX-PLANCK-INST. FESTKORPERFORSCHUNG, *FRAUNHOFER-INST. ANGEWANDTE
FESTKORPERPHYSIK, F.R.G. AND **UNIV. CALIFORNIA, U.S.A 290
(13) EFFECTS OF GROWTH PARAMETERS ON OXYGEN INCORPORATION INTO INGAALP
GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION Y. NISHIKAWA, M. SUZUKI
AND M. OKAJIMA, TOSHIBA, JAPAN 293
(LI4) DIRECT MEASUREMENT OF SURFACE RECOMBINATION LIFETIMES IN GAAS
QUANTUM WIRES BY TIME RESOLVED SPECTROSCOPY A.K. VISWANATH, K. HIRUMA,
K. OGAWA AND T. KATSUYAMA, HITACHI, JAPAN 296
(LI5) AN EFFECT OF FABRICATION DAMAGE ON CARRIER-DYNAMICS IN MQW NARROW
WIRES A. ENDOH, H. ARIMOTO AND S. MUTO, FUJITSU LABS., JAPAN 298
(L16) ORIGIN OF NONRADIATIVE RECOMBINATION CENTERS IN ALGALNP GROWN BY
MOVPE M. KONDO, N. OKADA, K. DOMEN, K. SUGIURA, C. ANAYAMA AND T.
TANAHASHI, FUJITSU LABS., JAPAN 300
(L17) LAYERED STRUCTURE GASE AS A THERMAL LATTICE MISMATCH BUFFER LAYER
IN THE GAAS/SI
HETEROEPITAXIAL SYSTEM J.E. PALMER, T. SAITOH AND M. TAMURA, OTL, JAPAN
302
PC3 ELECTRON DEVICES (III-V)
(1) HIGH FREQUENCY CHARACTERISTICS OF GAAS VERTICAL JFET DEVICES
OPERATED IN THE BIPOLAR
MODE G. SCHWEEGER AND H.L. HARTNAGEL, TECH. HOCHSCHULE DARMSTADT, F.R.G
304 (2) QUANTUM WELL GEOMETRICAL EFFECTS ON TWO-DIMENSIONAL ELECTRON
MOBILITY IN ALGAAS/ GAAS HETERO-STRUCTURES
T. WANG, T.-H. HSIEH AND T.W. CHEN, NAT L CHIAO TUNG UNIV., TAIWAN,
CHINA 307 (3) A GAAS JUNCTION-GATE FECFET FOR THE DIGITAL INTEGRATED
CIRCUITS
C.-T. KIM, Y.-J. LEE AND Y.-S. KWON, KAIST, KOREA 310
(4) NONLINEAR CONDUCTION IN PERIODICALLY S-DOPED SEMICONDUCTORS
T. IHN, H. KOSTIAL, R. HEY, M. ASCHE, J.J. MARES*, X.-M. FENG* AND F.
KOCH*, PAULDRUDE-INST. FESTKORPERELEKTRONIK AND *TECH. UNIV. MIINCHEN,
F.R.G 313
(5) HIGH-PERFORMANCE IN0.49GAO.5IP/GAAS TUNNELING EMITTER BIPOLAR
TRANSISTOR GROWN BY GAS
SOURCE MOLECULAR BEAM EPITAXY C.C. WU, S.S. LU, S.C. LEE, F. WILLIAMSON*
AND M.I. NATHAN*, NAT L TAIWAN UNIV., TAIWAN, CHINA AND *UNIV.
MINNESOTA, U.S.A 316
(6) NONVOLATILE MEMORY BASED ON PHASE TRANSITION IN CHALCOGENIDE THIN
FILM
T. KITAGAWA, K. NAKAYAMA, S. OKANO*, M. OHMURA AND M. SUZUKI, KANAZAWA
UNIV. AND *ISHIKAWA COLLEGE. TECH., JAPAN 319
(7) THE SIMULATION OF COMPOSITE RESONANT TUNNELING DIODES FOR
MULTIPLE-VALUED LOGIC
APPLICATIONS S.J. WANG AND K.M. UANG, NAT L CHENG KUNG UNIV., TAIWAN,
CHINA 322
(L8) HIGH CURRENT GAIN CARBON-DOPED-BASE ALGAAS/GAAS HBTS GROWN BY
GAS-SOURCE MBE
USING TMAA1 AS THE AL SOURCE T. TAKAHASHI, Y. YAMAGUCHI, H. ANDO, N.
OKAMOTO, S. YAMAURA, A. SANDHU, T. FUJII AND N. YOKOYAMA, FUJITSU LABS.,
JAPAN 325
XIX
IMAGE 9
SYMPOSIUM I: BLUE LEDS, LDS AND MATERIALS (11:20-18:20)
11:20 (1)
11:50 (2)
12:20 (3)
12:40 (4)
14:00 (5)
14:30 (6)
15:00 (7)
15:20 (8)
15:40 (9)
16:20 (10)
16:40 (11)
17:00 (12)
17:20 (13)
17:40 (14)
18:00 (15)
ROOM TEMPERATURE ULTRAVIOLET/BLUE LIGHT EMITTING DEVICES BASED ON
AIGAN/GAN MULTILAYERED STRUCTURE (INVITED) I. AKASAKI AND H. AMANO,
MEIJO UNIV., JAPAN 327
DOPING AND MBE GROWTH OF ZNSE FOR BLUE LEDS AND LDS (INVITED) K. OHKAWA,
A. TSUJIMURA, S. HAYASHI, S. YOSHII AND T. MITSUYU, MATSUSHITA, JAPAN ..
.330 EXTREMELY LOW RESISTIVITY, HIGH ELECTRON CONCENTRATION ZNSE GROWN
BY PLANAR DOPING METHOD
Z. ZHU, H. YOSHIHARA, K. TAKEBAYASHI AND T. YAO, HIROSHIMA UNIV., JAPAN
333 ADSORPTION AND DISSOCIATION MECHANISM OF EXCITED N2 ON ZNSE SURFACE
T. NAKAO AND T. UENOYAMA, MATSUSHITA, JAPAN 336
LIGHT EMISSION FROM QUANTUM WELL STRUCTURES CONTAINING ZNS, ZNSE, AND
RELATED ALLOYS (INVITED)
J.F. SCHETZINA, J. REN, R.P. VAUDO, D.B. EASON, K. GOSSETT, J. YU AND
J.W. COOK, NORTH CAROLINA STATE UNIV., U.S.A 339
BLUE AND GREEN DIODE LASERS AND LEDS IN ZNSE-BASCD QUANTUM STRUCTURES
(INVITED) A.V. NURMIKKO, R.L. GUNSHOR* AND M. KOBAYASHI**, BROWN UNIV.,
*PURDUE UNIV., U.S.A., AND **CHIBA UNIV., JAPAN 342
BLUE-GREEN ZNCCLSE/ZNSE MQW LASER DIODE WITHOUT GAAS BUFFER LAYER Y.
KAWAGUCHI, T. OHNO AND T. MATSUOKA, NTT, JAPAN 345
FORMATION OF LOCALIZED STATES BY WELL-BARRIER FLUCTUATION IN A II-VI
SUPCRLATTICC AND EXCITONIC STIMULATED EMISSION
I. SUEMUNE, Y. KURODA, Y. FUJII AND M. FUJIMOTO, HIROSHIMA UNIV., JAPAN
348
EFFECT OF EXTERNAL UNIAXIAL STRESS ON BLUE-GREEN EXCITON EMISSION OF
CDZNSE STRAINEDLAYER QUANTUM WELLS T. TAGUCHI AND C. ONODERA*, OSAKA
UNIV. AND *HIROSAKI TECH., JAPAN 351
CDZNSE-ZNSE MULTILAYERS BY MOVPE USING DIMCTHYLSELENIDE P.J. PARBROOK,
A. KAMATA AND T. UCMOTO, TOSHIBA, JAPAN 354
GROWTH OF EPITAXIAL ZNS, ZNSE AND ZNS-ZNSE MULTILAYERS ON GAAS BY
PULSECL-LASER ABLA TION
J.W. MCCAMY, D.H. LOWNDES* AND J.D. BUDAI*, UNIV. TENNESSEE AND *OAK
RIDGE NAT L LAB., U.S.A 357
PLASMA-ASSISTED EPITAXIAL GROWTH OF P-TYPE ZNSE IN NITROGEN-BASED PLASMA
T. HAMADA, T. HARIU AND S. ONO, TOHOKU UNIV., JAPAN 360
SECOND-HARMONIC GENERATION IN STRAINED LAYER INGAAS/GAAS
MULTI-QUANTUM-WELL LASERS J.W. XIAO, J.Y. XU, J.M. ZHANG, G.W. YANG,
Z.T. XU AND L.H. CHEN, CHINESE ACADEMY SCIENCES, CHINA 363
GREEN COLOR PCEL DEVICE STACKED WITH N-I-N A-SIC PHOTOCONDUCTOR ON
ZNS:TBOF TFEL K. DEGUCHI, S. HOSOMI AND Y. HAMAKAWA, OSAKA UNIV., JAPAN
366
GENERATION OF INTENSE GREEN AND BLUE EMISSION IN ENERGY UPCONVERSION
DEVICES HAVING OPTICAL CONFINEMENT STRUCTURE Y. MITA, N. ANDO AND S.
SHIONOYA, TOKYO ENG. UNIV., JAPAN 369
ROOM D
POSTER PREVIEW (9:00-10:50)
PD1 POROUS SI
(1) OXIDE-STABILIZED POROUS SILICON FOR LUMINESCENCE APPLICATIONS V.
PETROVA-KOCH, T. MUSCHIK, A. KUX, F. KOCH AND V. LEHMANN*, TECH. UNIV.
MIINCHEN AND *SICMENS, F.R.G 372
(2) PREPARATION AND VISIBLE ELECTROLUMINESCENCE OF //C-SIC/POROUS
SI/C-SI PN JUNCTIONS T. FUTAGI, T. MATSUMOTO, M. KATSUNO, Y. OHTA, H.
MIMURA AND K. KITAMURA, NIPPON STEEL, JAPAN 375
(3) CHANGED TO PC1 OPTICAL DEVICES (14) PP. 252-254
XX
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(4) MECHANISM OF VISIBLE PHOTOLUMINESCENCE FROM ^C-GE EMBEDDED IN SI02
GLASSY MATRICES Y. MAEDA, H. UTO*, Y. KANEMITSU* AND Y. MASUMOTO*,
HITACHI AND *UNIV. TSUKUBA, JAPAN 379
(5) AMORPHOUS-SIC THIN FILM LIGHT EMITTING DIODE USING
QUANTUM-WELL-INJECTION STRUCTURES J.-W. HONG, T.-S. JEN, N.-F. SHIN,
J.-Y. CHEN, S.-L. NING AND C.-Y. CHANG*, NAT L CEN TRAL UNIV. AND
*NAT L CHIAO-TUNG UNIV., TAIWAN, CHINA 382
(L6) OPTICAL PROPERTIES OF POROUS SILICON AND SMALL SILICON CLUSTERS K.
SUZUKI, H. UTO, Y. KANEMITSU AND Y. MASUMOTO, UNIV. TSUKUBA, JAPAN 385
(L7) IMPROVEMENT OF ELECTROLUMINESCENT EFFICIENCY OF LIGHT-EMITTING
POROUS SILICON X. WANG, X.Y. HOU, P.H. HAO, F.L. ZHANG, G. SHI AND D.M.
HUANG, FUDAN UNIV.,
CHINA 387
PD2 SI PROCESSES
(1) RECRYSTAILIZATION OF PATTERNED SILICON-THIN-FILMS BY AC-MAGNETIC
FIELDS H. HAYAMA, M. MUKAINARI AND T. SAITO, NEC, JAPAN 389
(2) AMORPHIZATION AND STRUCTURAL RELAXATION PROCESSES IN ION IMPLANTED
SI T. MOTOOKA, F. KOBAYASHI, Y. HIROYAMA AND T. TOKUYAMA, UNIV. TSUKUBA,
JAPAN 392 (3) CRYSTALLIZATION MECHANISM OF NANOCRYSTALLINE SILICON
FABRICATED BY HYDROGEN RADICAL ANNEALING
M. OTOBE AND S. ODA, TOKYO INST. TECH., JAPAN 395
(4) WITHDRAWN
(5) PROXIMITY GETTERING OF HEAVY METALS BY HIGH ENERGY ION IMPLANTATION
T. KUROI, Y. KAWASAKI, S. KOMORI, K. FUKUMOTO, M. INUISHI, K. TSUKAMOTO,
H.
SHINYASHIKI* AND T. SHINGYOJI*, MITSUBISHI AND *MITSUBISHI MATERIALS,
JAPAN 398 (6) IMPURITY GETTERING TOWARD RESIDUAL DAMAGES IN SHALLOW
JUNCTIONS R.-D. CHANG, T.-F. CHEN AND J.S. FU, ELEC. RES. & SERVICE
ORGANIZATION, TAIWAN, CHINA. .. 401 (7) PASSIVATION OF RADIATION DAMAGE
IN MOS STRUCTURES BY HYDROGEN ION IMPLANTATION
S. KAR AND S. ASHOK*, INDIAN INST. TECH., INDIA AND *PENN. STATE UNIV.,
U.S.A 404 (8) RADIATION-INDUCED ORDERING IN MOS STRUCTURES WITH
ZINC-DOPED OXIDES
T. BROZEK, V.Y. KIBLIK* AND V.G. LITOVCHENKO*, WARSAW UNIV. TECH.,
POLAND AND
*ACADEMY SCIENCES, UKRAINE 407
(9) DOPING CONTROL IN LPCVD IN-SITU BORON DOPED POLYSILICON
J. SHIOZAWA, Y. KASAI, Y. MIKATA AND K. YAMABE, TOSHIBA, JAPAN 410
(10) THE IMPACT OF TITANIUM SILICIDE ON THE CONTACT RESISTANCE FOR
SHALLOW JUNCTION FORMED BY
OUT-DIFFUSION OF ARSENIC FROM POLYSILICON W.L. YANG, T.F. LEI, J.T.
HWANG AND C.L. LEE, NAT L CHIAO TUNG UNIV., TAIWAN, CHINA 413
(LI 1) ANGLE RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY STUDY OF
ULTRATHIN N20 OXIDES J. ANN, M. ARENDT, J.M. WHITE AND D.L. KWONG, UNIV.
TEXAS, U.S.A 416
(L12) SIDE ETCH CONTROL OF N+-POLYSILICON WITH NITROGEN ADDED CHLORINE
PLASMA T. MATSUURA, J. MUROTA, T. OHMI AND S. ONO, TOHOKU UNIV., JAPAN
418
(LI3) RAMAN STUDY OF STRESSES CAUSED BY INTRINSIC GETTERS DISTRIBUTION
IN DEVICE STRUCTURES V.V. BOLOTOV, M.D. EFREMOV, I. BABANSKAYA* AND K.
SCHMALZ*, ACADEMY OF SCIENCES, RUSSIA AND *INST. SEMICONDUCTOR PHYSICS,
F.R.G 420
PD3 ADVANCED MATERIALS
(1) HEMISPHERICAL GRAINED SILICON (HSG-SI) FORMATION ON IN-SITU
PHOSPHOROUS DOPED AMOR
PHOUS-SI USING THE SEEDING METHOD H. WATANABE, T. TATSUMI, A. SAKAI, S.
SHISHIGUCHI, T. NIINO, I. HONMA, T. MIZUTANI AND T. KIKKAWA, NEC, JAPAN
422
(2) NOVEL SINGLE-STEP OXYNITRIDATION (SS-RTON) TECHNOLOGY FOR FORMING
HIGHLY RELIABLE
EEPROM TUNNEL OXIDE FILMS H. FUKUDA, M. YASUDA AND T. IWABUCHI, OKI,
JAPAN 425
(3) A NEW CRACKING PHENOMENA OF THIN SI3N4 FILM DUE TO STRESS FROM
POLY-SI GRAIN GROWTH
M. ITOH, N. INOUE, N. HIRASHITA AND M. YOSHIMARU, OKI, JAPAN 428
XXI
IMAGE 11
(4) LOW-TEMPERATURE FURNACE-ANNEALED ALUMINUM-GATE MOSFET LOR
ULTRA-HIGH-SPEED
INTEGRATED CIRCUITS K. KOTANI, T. OHMI, S. SHIMONISHI, T. MIGITA, H.
KOMORI, T. SHIBATA AND T. NITTA*, TOHOKU UNIV. AND *HITACHI, JAPAN 431
(5) DEGRADATION OF SI02/SI INTERFACE CHARACTERISTICS BY ALUMINUM
CONTAMINATION
T. ITOGA, H. KOJIMA AND A. HIRAIWA, HITACHI, JAPAN 434
(6) FABRICATIONS AND BONDING STRENGTHS OF BONDED SILICON-QUARTZ WAFERS
T. ABE, A. UCHIYAMA*. K. YOSHIZAWA* AND Y. NAKAZATO*, SHIN-ETSU HANDOTAI
AND
*NAGANO DENSHI, JAPAN 437
(7) HIGH-SENSITIVITY AND HIGH-RESOLUTION CONTACT HOLE PATTERNING
ENHANCED BY AN OPTIMIZED
DEVELOPER H. SHIMADA, S. SHIMOMURA, K. HIROSE, M. ONODERA AND T. OHMI,
TOHOKU UNIV., JAPAN 440
(8) SUB-50 NM HIGH ASPECT-RATIO SILICON PILLARS, RIDGES AND TRENCHES
FABRICATED USING ULTRA-
HIGH E-BEAM LITHOGRAPHY AND RIE P.B. FISCHER AND S.Y. CHOU, UNIV.
MINNESOTA, U.S.A 443
(9) SENSITIVITIES OF LASER/MICROWAVE- AND CONVENTIONAL-DLTS FOR DEFECTS
IN CZ SILICON
K. KATAYAMA, A. AGARWAL, Z.J. RADZIMSKI AND F. SHIMURA, NORTH CAROLINA
STATE UNIV., U.S.A 446
(10) FABRICATION OF A SIGE-CHANNEL MOSFET CONTAINING HIGH GE FRACTION
LAYER BY LOW-
PRESSURE CHEMICAL VAPOR DEPOSITION K. GOTO, J. MUROTA, T. MAEDA*, R.
SCHULZ**, K. AI/.AWA***, R. KIRCHER****, K. YOKOO AND S. ONO, TOHOKU
UNIV., JAPAN, *KOKUSAI ELCC..JAPAN, **TCCH. UNIV. DARMSTADT, F.R.G.,
***SUMITOMO METAL MINING, JAPAN AND ****SIEMENS, F.R.G 449
(LLL) CHARACTERIZATION OF GESI/SI LAYER STRUCTURE BY CBED G. SHAO, Z.
YANG AND B.L. WEISS, UNIV. SURREY, U.K 452
PD4 SUPERCONDUCTORS
(1) LOWER-SUBMICRON PATTERNING PROCESS FOR BISRCACUO L-LIGH-TE
SUPERCONDUCTING THIN FILMS
S. FUJIWARA, R. YUASA, H. FURUKAWA, M. NAKAO AND S. SUZUKI, SANYO, JAPAN
454
(2) FABRICATION OF HIGH QUALITY PEROVSKITC OXIDE FILMS BY LATERAL
EPITAXY VERIFIED WITH
RHEED OSCILLATION H. OHKUBO, N. KANDA, M. YOSHIMOTO AND H. KOINUMA,
TOKYO INST. TECH., JAPAN 457 (3) IN-SITU OPTICAL MONITORING OF OXIDE
SUPERCONDUCTOR GROWTH FOR LAYCR-BY-LAYCR CHEMICAL
VAPOR DEPOSITION H. ZAMA, K. SAKAI AND S. ODA, TOKYO INST. TECH., JAPAN
460
(4) SUPERCONDUCTIVITY AND MAGNETISM OF Y, XPRXBA2CU408 PREPARED BY
NITRIDE PYROLYSIS
METHOD T.H. MEEN, Y.C. CHEN AND H.D. YANG, NAT L SUN YAT-SEN UNIV.,
TAIWAN, CHINA 463 (5) ELECTRON EMISSION INTO VACUUM FROM PZT
FERROELECTRIC CERAMICS INDUCED BY POLARIZATION
REVERSAL
J. ASANO, M. OKUYAMA AND Y. HAMAKAWA, OSAKA UNIV., JAPAN 466
D-2: POROUS SI (11:20-12:50)
11:20 (1) POROUS SILICON: A QUANTUM SPONGE STRUCTURE? (INVITED) U.
GOESELE AND V. LEHMANN, DUKE UNIV., U.S.A 469
11:50 (2) THE EVIDENCE OF QUANTUM SIZE EFFECT FROM PHOTOLUMINESCENCE OF
LOW TEMPERATURE OXIDIZ ED POROUS SI A. NAKAJIMA, T. ITAKURA, S.
WATANABE, Y. SUGITA, Y. NARA AND N. NAKAYAMA, FUJITSU LABS., JAPAN 472
12:10 (3) PHOTOSYNTHESIS OF LUMINESCENT POROUS SILICON N. NOGUCHI AND I.
SUEMUNE, HIROSHIMA UNIV., JAPAN 475
12:30 (4) ULTRAFAST LUMINESCENCE DECAY IN POROUS SILICON T. MATSUMOTO,
T. FUTAGI, H. MIMURA AND Y. KANEMITSU*, NIPPON STEEL AND *UNIV. TSUKUBA,
JAPAN 478
XXN
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SYMPOSIUM IV: NEW DEVICE CONCEPTS TOWARD SUB-0.1 FIM INTEGRATION
(14:20-17:50) 14:20 (1) FABRICATION AND MEASUREMENTS OF ULTRA-SHORT
SILICON MOSFETS (INVITED) A. HARTSTEIN, IBM, U.S.A 481
14:50 (2) MESOSCOPIC DEVICES: WILL THEY SUPERSEDE TRANSISTOR-BASED ULSI?
(INVITED) H.I. SMITH AND D.A. ANTONIADIS, MIT, U.S.A 485
15:20 (3) HIGH SPEED 0.1 / M CMOS DEVICES OPERATING AT ROOM TEMPERATURE
A. TORIUMI, T. MIZUNO, M. IWASE, M. TAKAHASHI, H. NIIYAMA, M. FUKUMOTO,
S. INABA, I. MORI AND M. YOSHIMI, TOSHIBA, JAPAN 487
15:40 (4) 3 V OPERATION OF 70 NM GATE LENGTH MOSFET WITH NEW DOUBLE
PUNCHTHROUGH STOPPER STRUCTURE
T. HASHIMOTO, Y. SUDOH, H. KURINO, A. NARAI, S. YOKOYAMA, Y. HORIIKE AND
M. KOYANAGI, HIROSHIMA UNIV., JAPAN 490
16:20 (5) SOI: NEW OPPORTUNITIES FOR SUB-0.25 /;M VLSI (INVITED) G.G.
SHAHIDI, IBM, U.S.A 493
16:50 (6) HOT-CARRIER IMMUNITY OF A 0.1-^M-GATE ULTRATHIN-FILM
MOSFET/SIMOX Y. OMURA AND K. IZUMI, NTT, JAPAN 496
17:10 (7) LOW TEMPERATURE MOSFET OPERATION BY THE TEMPERATURE SCALING
THEORY M. YOKOYAMA, T. HIDAKA, Y.W. YI*, K. MASU AND K. TSUBOUCHI,
TOHOKU UNIV. AND HEWLETT-PACKARD LABS. JAPAN, JAPAN 499
17:30 (8) SUB-20 PSEC SWITCHING CMOS AT LIQUID N2 TEMPERATURE J. KOGA,
M. TAKAHASHI, H. NIIYAMA AND A. TORIUMI, TOSHIBA, JAPAN 502
AUGUST 28, FRIDAY
ROOM A
A-3: HOT CARRIER/DIELECTRICS I (9:00-10:40)
9:00 (1) EVALUATION OF LOCALISED TRAPPED CHARGE AND INTERFACE STATES IN
MOSFET S THROUGH GATE CAPACITANCES MEASUREMENT R. GHODSI, Y.T. YEOW,
C.H. LING* AND M.K. ALAM**, UNIV. QUEENSLAND, AUSTRALIA, *NAT L UNIV.
SINGAPORE, SINGAPORE AND **GRIFFITH UNIV., AUSTRALIA 505
9:20 (2) A NEW PREDICTION METHOD FOR HOT CARRIER DEGRADATION OF
SUBMICRON PMOSFET WITH CHARGE PUMPING TECHNIQUE T. HAYASHI, H. FUKUDA,
A. UCHIYAMA AND T. IWABUCHI, OKI, JAPAN 509
9:40 (3) UNDERSTANDING OF ENHANCED SENSITIVITY TO HOT CARRIER
DEGRADATION IN DRAIN ENGINEERED N-FETS
C.C.-H. HSU, B.S. WU,* G.G. SHAHIDI,* B. DAVARI,* W.H. CHANG* AND A.
ACOVIC*,
NAT L TSING-HUA UNIV., TAIWAN, CHINA AND *IBM, U.S.A 512
10:00 (4) EFFECT OF GATE MATERIALS ON GENERATION OF INTERFACE STATE BY
HOT-CARRIER INJECTION H. MATSUHASHI AND S. NISHIKAWA, OKI, JAPAN 515
10:20 (5) AC HOT-CARRIER-DEGRADATION MECHANISM IN LDDMOSFET S N.
SHIMOYAMA AND T. TSUCHIYA, NTT, JAPAN 518
A-4: HOT CARRIER/DIELECTRICS II (11:00-12:40)
11:00 (1)
11:20 (2)
CHARACTERIZATION OF ULTRA-THIN CAPACITORS FABRICATED USING RTN TREATMENT
PRIOR TO CVD TA205 FILM FORMATION S. KAMIYAMA, P.-Y. LESAICHERRE, A.
ISHITANI, A. SAKAI, A. TANIKAWA AND I. NISHIYAMA,
NEC, JAPAN 521
EFFECTS OF POST-DEPOSITION ANNEALING AND ELECTRODE MATERIALS ON THE
CHARACTERISTICS OF TAN
TALUM OXIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
H.S. PARK, Y.K. BAEK, J.C. KIM AND K.H. OH, HYUNDAI ELEC, KOREA 524
XXNI
IMAGE 13
11:40 (3) PLASMA ENHANCED LIQUID SOURCE-CVD AND RAPID THERMAL ANNEALING
OF TANTALUM PENTA OXIDE DIELECTRIC MATERIAL P.A. MURAWALA, M. SAWAI, T.
TATSUTA, O. TSUJI, SZ. FUJITA* AND SG. FUJITA*, SAMCO AND KYOTO UNIV.,
JAPAN 527
12:00 (4) ELECTRICAL PROPERTIES OF MOSFETS WITH N20-NITRIDED LPCVD SI02
GATE DIELECTRICS J. AHN, G.Q. LO AND D.L. KWONG, UNIV. TEXAS, U.S.A 530
12:20 (5) NITRIDE MASKED POLISHING (NMP) TECHNIQUE FOR SURFACE
PLANARIZATION OF INTERLAYERDIELECTRIC FILMS
Y. HAYASHI, T. WATANABE AND S. TAKAHASHI, NEC, JAPAN 533
A-5: SURFACE AND INTERFACE CHARACTERIZATION (14:00-15:40)
14:00 (1) SULFUR STRUCTURAL AND CHEMICAL BONDING CHANGES FOR
METAL/S-PASSIVATED GAAS(LLL) STUDIED BY THE X-RAY STANDING WAVE
TECHNIQUE AND SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY M.
SUGIYAMA, S. MAEYAMA, T. SCIMECA, M. OSHIMA, H. OIGAWA*. Y. NANNICHI*
AND H.
HASHIZUME**, NTT, *UNIV. TSUKUBA AND **TOKYO INST. TECH., JAPAN 536
14:20 (2) IN-SITU CHARACTERIZATION OF COMPOUND SEMICONDUCTOR SURFACES BY
NOVEL
PHOTOLUMINESCCNCC SURFACE STATE SPECTROSCOPY T. SAWADA, K. NUMATA, S.
TOHDOH, T. SAITOH AND H. HASCGAWA, HOKKAIDO UNIV., JAPAN 539
14:40 (3) SURFACE CHEMICAL BONDING OF SELENIUM TREATED GAAS(100) T.
SCIMECA, Y. WATANABE, R. BERRIGAN AND M. OSHIMA, NTT, JAPAN 542
15:00 (4) OXIDATION OF SULFUR-TREATED GAAS SURFACES STUDIED BY
PHOTOLUMINESCCNCC AND PHOTOCLCCTRON SPECTROSCOPY M. OSHIMA, T. SCIMECA,
Y. WATANABE, H. OIGAWA* AND Y. NANNICHI*, NTT AND *UNIV. TSUKUBA, JAPAN
545
15:20 (5) CONTROL OF GAAS SCHOTTKY BARRIER HEIGHT BY ULTRATHIN MBE SI
INTERFACE CONTROL LAYER K. KOYANAGI, S. KASAI AND H, HASCGAWA, HOKKAIDO
UNIV., JAPAN 548
A-6: ADVANCED SI MATERIALS (16:00-17:50)
16:00 (1) INTEGRATED FERROELECTRICS-MATERIALS, PROCESSES AND
APPLICATIONS (INVITED) C.A. PAS DE ARAUJO, UNIV. COLORADO, U.S.A 551
16:30 (2) SUBMICRON SRTI03 PATTERNING BY REACTIVE ION ETCHING WITH CL2
AND SFFL H. AOKI, T. HASHIMOTO, E. IKAWA, T. KIKKAWA, S. YAMAMICHI, T.
SAKUMA AND Y. MIYASAKA, NEC, JAPAN 554
POLYCRYSTALLINE CARBON: A NOVEL MATERIAL FOR GATE ELECTRODES IN MOS
TECHNOLOGY G. RAGHAVAN, J.L. HOYT AND J.F. GIBBONS, STANFORD UNIV.,
U.S.A 557
ELECTRONIC STRUCTURES OF SI-BASED MAN-MADE CRYSTALS S. SUGAHARA, O.
SUGIURA AND M. MATSUMURA, TOKYO INST. TECH., JAPAN 560
AMORPHOUS VISIBLE-LIGHT THIN FILM LED HAVING A-SIN:H AS A LUMINESCENT
LAYER D. KRUANGAM, V. BOONKOSUM, P. SIAMCHAI AND S. PANYAKEOW,
CHULALONGKORN UNIV., THAILAND 563
16:50 (3)
17:10 (4)
17:30 (5)
ROOM B
B-3: 1
9:30
(1)
(2)
B-3: ELECTRON DEVICES (III-V) (9:30-10:50)
WITHDRAWN EFFECTS OF IMPURITY SCATTERING ON RESONANT TRANSMISSION
COEFFICIENTS IN GAAS/AIAS DOUBLE BARRIER STRUCTURES H. FUKUYAMA, T. WAHO
AND T. MIZUTANI, NTT, JAPAN 567
9:50 (3) TEMPERATURE DEPENDENCE OF THE DC AND HIGH FREQUENCY PROPERTIES
OF HEMTS WITH SUB 0.1 //M GATELENGTH A. MARTEN, H. SCHWEIZER, H.
NICKEL*, W. SCHLAPP* AND R. LOESCH*. UNIV. STUTTGART AND *FTZ-TELEKOM,
F.R.G 570
XXIV
IMAGE 14
10:10 (4) HIGH-PERFORMANCE INALAS/INGAAS HEMTS AND THEIR APPLICATION TO
A 40-GHZ MONOLITHIC AMPLIFIER Y. UMEDA, T. ENOKI, K. ARAI AND Y. ISHII,
NTT, JAPAN 573
10:30 (5) ALGAAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTOR ICS FOR OPTICAL
TRANSMISSION SYSTEMS N. NAGANO, T. SUZAKI, M. SODA, K. KASAHARA AND K.
HONJO, NEC, JAPAN 576
B-4: QUANTUM STRUCTURES (11:10-12:30)
11:10 (1) UNIQUE POLARIZATION DEPENDENT ELECTROABSORPTION EFFECT IN
COUPLED QUANTUM WELLS Y.-C. CHAN AND K. TADA, UNIV. TOKYO, JAPAN 579
11:30 (2) A SELECTIVE GROWTH OF GAAS MICRO CRYSTALS ON A SE-TERMINATED
GAALAS SURFACE FROM GA DROPLETS FOR THE QUANTUM WELL BOX STRUCTURE T.
CHIKYOW AND N. KOGUCHI, NAT L RES. INST. METALS, JAPAN 582
11:50 (3) PHOTOLUMINESCENCE STUDY OF ELECTRON BEAM-INDUCED DAMAGE IN
GAAS/ALGAAS QUANTUM WELL STRUCTURES
N. TANAKA, H. KAWANISHI AND T. ISHIKAWA, OTL, JAPAN 585
(4) WITHDRAWN
12:10 (5) PHOTOREFLECTANCE STUDY OF GAAS/GAASP STRAINED-BARRIER QUANTUM
WELL STRUCTURES H. YAGUCHI, X. ZHANG, K. ONABE, Y. SHIRAKI AND R. ITO,
UNIV. TOKYO, JAPAN 589
B-5: OPTOELECTRONIC DEVICES (14:00-15:20)
14:00 (1) PARALLEL DATA INSPECTION OPERATION IN THREE-DIMENSIONAL
CONTENT ADDRESSABLE MEMORY WITH OPTICAL INTERCONNECTION H. OKANO, H.
TAKATA, T. NAKANO, T. TANAKA, S. MIYAZAKI, M. HIROSE, H. TSUKAMOTO*, S.
YOKOYAMA, R. AIBARA AND M. KOYANAGI, HIROSHIMA UNIV. AND *MITSUBISHI
HEAVY,
JAPAN 592
14:20 (2) PIXELS CONSISTING OF DOUBLE VERTICAL-CAVITY DETECTOR AND
SINGLE VERTICAL-CAVITY LASER SEC TIONS FOR 2-D BIDIRECTIONAL OPTICAL
INTERCONNECTIONS H. KOSAKA, I. OGURA, M. SUGIMOTO, H. SAITO, T. NUMAI
AND K. KASAHARA, NEC, JAPAN... 595
14:40 (3) HIGH ELECTRONIC-OPTICAL CONVERSION EFFICIENCY IN A VERTICAL TO
SURFACE TRANSMISSION ELECTRO-PHOTONIC DEVICE WITH A VERTICAL CAVITY K.
KURIHARA, T. NUMAI, I. OGURA, H. KOSAKA, M. SUGIMOTO AND K. KASAHARA,
NEC, JAPAN 598
15:00 (4) A NOVEL OPTOELECTRONIC RS FLIP-FLOP BASED ON OPTICALLY COUPLED
INVERTERS T. CHINO, K. MATSUDA, H. ADACHI AND J. SHIBATA, MATSUSHITA,
JAPAN 601
B-6: SEMICONDUCTOR LASERS (15:40-18:00)
15:40 (1) LOW THRESHOLD 1.3 AND 1.55 PM STRAINED QUANTUM WELL LASERS
(INVITED) R. BHAT, C.E. ZAH, C. CANEAU, M.A. KOZA, D.M. HWANG, F.J.
FAVIRE, B. PATHAK, P.S.D.
LIN, A.S. GOZDZ AND A. KASUKAWA*, BELLCORE, U.S.A. AND *FURUKAWA ELEC,
JAPAN 604
16:10 (2) LOW THRESHOLD OPERATION OF TENSILE STRAINED INGAAS/INGAASP
QUANTUM WELL LASERS WITH SIMPLE SEPARATE-CONFINEMENT HETEROSTRUCTURES T.
YAMAMOTO, H. NOBUHARA, M. SUGAWARA, T. FUJII AND K. WAKAO, FUJITSU
LABS.,
JAPAN 607
16:30 (3) THREADING DISLOCATION REDUCTION IN INP/GAAS BY THIN STRAINED
INTERLAYER AND ITS APPLICA TIONTO THE FABRICATION OF 1.3 JUM WAVELENGTH
LASER ON GAAS Y. OKUNO, T. KAWANO, T. TSUCHIYA AND T. TANIWATARI,
HITACHI, JAPAN 610
16:50 (4) GALNASP/INP SURFACE EMITTING LASER GROWN BY CBE AND WAVELENGTH
TUNING EMPLOYING EXTERNAL REFLECTOR N. YOKOUCHI, T. MIYAMOTO, T. UCHIDA,
Y. INABA, F. KOYAMA AND K. IGA, TOKYO INST.
TECH., JAPAN 613
17:10 (5) HIGH POWER SEMICONDUCTOR LASERS (INVITED) R.R. CRAIG AND D.R.
SCIFRES, SDL, U.S.A 616
17:40 (6) ONE-STEP-MOVPE-GROWN INDEX-GUIDE GALNP/ALGALNP VISIBLE LASER
USING SIMULTANEOUS IMPURITY DOPING C. ANAYAMA, M. KONDO, H. SEKIGUCHI,
K. DOMEN, H. SUDO, A. FURUYA AND T.
TANAHASHI, FUJITSU LABS., JAPAN
619
XXV
IMAGE 15
ROOM C
SYMPOSIUM II: HETEROEPITAXY ON SI (9:00-17:50)
9:00 (0) INTRODUCTORY TALK BY SYMPOSIUM ORGANIZERS 9:05 (1) FRONTIERS OF
MONOLITHIC INTEGRATION OF SEMICONDUCTOR III-V OPTOELECTRONIC DEVICES
WITH SILICON TECHNOLOGY (INVITED)
M. RAZEGHI, R. SUDHARSANAN AND J.C.C. FAN*, NORTHWESTERN UNIV. AND
*KOPIN, U.S.A... .622 9:35 (2) TEM AND PL CHARACTERIZATION OF GAAS AND
ZNSE/ZNCDSE GROWN ON SI (INVITED)
M.M. AL-JASSIM, K.M. JONES, S.P. AHRENKIEL, S.M. VERNON AND J. FURDYNA,
NREL, U.S.A 626
10:05 (3) CRITICAL THICKNESS OF HETEROEPITAXIAL SI, ,GEN/SI LAYERS AS
STUDIED BY ATOMIC FORCE
MICROSCOPY T. NAKAMURA, M. OHNO, K. ASHIKAGA AND S. OHNO, OKI, JAPAN 629
10:20 (4) X-RAY STANDING WAVE ANALYSIS OF GAAS/SI INTERFACE T. KAWAMURA,
H. TAKENAKA, M. UNETA, M. OSHIMA, Y. FUKUDA, Y. OHMAEHI, K. I/.UMI*, T.
ISHIKAWA*, S. KIKUTA* AND X.W. ZHANG**, NTT, *UNIV. TOKYO AND **NAT L
LAB. HIGH ENERGY PHYSICS, JAPAN 632
10:35 (5) EFFECT OF DISLOCATION NETWORKS AT SLS INTERFACES ON THE
REDUCTION OL THREADING DISLOCA TIONS IN GAAS/SI
A. TACHIKAWA, A. JONO, T. AIGO AND A. MORITANI, NIPPON STEEL, JAPAN 635
11:10 (6) INITIAL GROWTH STAGES AND DEFECT CONTROL IN GAAS ON SI
(INVITED) M. TAMURA, A. HASHIMOTO, T. SAITO AND J. PALMER, OTL, JAPAN
638
11:40 (7) MISORIENTATION IN GAAS ON SI GROWN BY MIGRATION-ENHANCED
EPITAXY K. NOZAWA AND Y. HORIKOSHI, NTT, JAPAN 641
11:55 (8) REDUCTION OF DISLOCATION DENSITY OF GAAS ON SI(100) BY LOW
TEMPERATURE GROWTH AND ATOMIC HYDROGEN IRRADIATION FI. SHIMOMURA, Y.
OKADA AND M. KAWABC, UNIV. TSUKUBA, JAPAN 644
12:10 (9) BEHAVIOR OF MISFIT DISLOCATIONS IN GAAS LAYERS GROWN ON SI AT
LOW TEMPERATURE BY MOLECULAR BEAM EPITAXY H. KATAHAMA, K. ASAI AND Y.
SHIBA, SUMITOMO METAL, JAPAN 647
12:25 (10) LOW DEFECT DENSITY LOW STRESS GAAS GROWN ON UNDERCUT GAAS ON
SI N. WADA, S. YOSHIMI, M. SHIGEKANE, S. SAKAI, Y. SHINTANI AND M.
FUKTII, TOKUSHIMA UNIV., JAPAN 650
12:40 (11) CHARGE BALANCED HETEROEPITAXIAL GROWTH OF GAAS ON SI K.
MAEHASHI, S. HASCGAWA AND H. NAKASHIMA, OSAKA UNIV., JAPAN 653
14:15 (12) INP-BASED OPTICAL DEVICES ON SI SUBSTRATES (INVITED) M. SUGO,
H. MORI, Y. ITOH AND Y. SAKAI, NTT, JAPAN 656
14:45 (13) A STUDY OF GAAS DIGITAL ICS ON SI SUBSTRATES S. ONOZAWA, T.
KIMURA, K. INOKUCHI, Y. SANO AND M. AKIYAMA, OKI, JAPAN 659 15:00 (14)
INGAP/INGAAS/GAAS PSEUDOMORPHIC HEMT DCFL CIRCUITS ON SI SUBSTRATES H.
SUEHIRO, S. KURODA, T. MIYATA, T. OHORI AND M. TAKIKAWA, FUJITSU LABS.,
JAPAN .. .662
15:15 (15) MONOLITHIC INTEGRATION OF STRAIN-RELIEVED ALGAAS/LNGAAS LASER
AND GAAS MESFET GROWN ON SI USING SELECTIVE REGROWTH BY MOCVD T. EGAWA,
K. YAMAMOLO, T. JIMBO AND M. UMCNO, NAGOYA INST. TECH., JAPAN 665 15:50
(16) SIGE/SI HETEROSTRUCTURES (INVITED)
T. TATSUMI, K. AKETAGAWA, M. HIROI AND T. NIINO, NEC, JAPAN 668
16:20 (17) SOLID PHASE RCCRYSLALLIZATION OF AMORPHOUS AND MBE-GROWN GE
FILMS ON SI SUBSTRATES BY ANNEALING UNDER ULTRAHIGH PRESSURE H.
ISHIWARA, T. SATOH*, P.H. YEE AND A. SAWAOKA, TOKYO INST. TECH. AND
*NTT, JAPAN... 671
16:35 (18) EXCITONIC BAND EDGE LUMINESCENCE IN STRAINED SI, XGCX/SI
QUANTUM WELL STRUCTURES GROWN BY GAS-SOURCE SI MOLECULAR BEAM EPITAXY S.
FUKATSU, N. USAMI, H. YOSHIDA, A. FUJIWARA, Y. TAKAHASHI, Y. SHIRAKI AND
R. HO, UNIV. TOKYO, JAPAN 674
16:50 (19) SOLID SOURCE MOLECULAR BEAM EPITAXIAL GROWTH OF HIGHLY
LUMINESCENT SI, *GEX/SI QUANTUM WELL STRUCTURES N. USAMI, S. FUKATSU AND
Y. SHIRAKI, UNIV. TOKYO, JAPAN 677
XXVI
IMAGE 16
17:05 (20) HETEROEPITAXY OF LAYERED III-VI SEMICONDUCTOR GASE ON
HYDROGEN-TERMINATED SI(L 11) SUR FACES
K. UENO, K.Y. LIU, Y. FUJIKAWA, K. SAIKI AND A. KOMA, UNIV. TOKYO, JAPAN
680 17:20 (21) NITRIDATION OF SI SUBSTRATE SURFACE DURING MOCVD GROWTH
OF INN A, YAMAMOTO, H. KITAJIMA AND M. TSUJINO, FUKUI UNIV., JAPAN 683
17:35 (22) GROWTH OF YBACUO FILMS ON SI(100) SUBSTRATES WITH ULTRATHIN
METAL OVERLAYERS T. YAMADA, F. TODA, R. KAWASAKI AND H. ABE, OKI, JAPAN
686
ROOM D
LD: LATE NEWS (9:00-11:00) 9:00 (1) A PROPOSAL OF SELF-LEARNING NEURON
CIRCUITS WITH HIGH-DENSITY SYNAPSE CONNECTIONS OF FERROELECTRIC THIN
FILMS H. ISHIWARA, TOKYO INST. TECH., JAPAN 689
9:10 (2) A MONOLITHICALLY INTEGRATED PHOTODETECTOR-AMPLIFIER USING
A-SI:H P-I-N PHOTODIODES AND POLY-SI THIN-FILM TRANSISTORS
N. YAMAUCHI, Y. INABA AND M. OKAMURA, NTT, JAPAN 691
9:20 (3) A NOVEL FABRICATION METHOD FOR POLY-SI TFTS WITH A SELF-ALIGNED
LDD STRUCTURE K. KOBAYASHI, H. MURAI, T. SAKAMOTO, H. TOKIOKA, T.
SUGAWARA, Y. MASUTANI, H. NAMIZAKI AND M. NUNOSHITA, MITSUBISHI, JAPAN
693
9:30 (4) LOW VOLTAGE, HIGH GAIN, 0.2/JM NMOSFETS BY CHANNEL COUNTER
DOPING WITH AS R. NAGAI, K. UMEDA AND E. TAKEDA, HITACHI, JAPAN 695
9:40 (5) ULTRATHIN TA205 FILMS ON RAPID THERMAL NITRIDED RUGGED
POLYSILICON FOR HIGH DENSITY DRAMS P.C. FAZAN, V.K. MATHEWS, R.L.
MADDOX, A. DITALI, N. SANDLER* AND D.L. KWONG**, MICRON SEMICONDUCTOR,
*LAM RES. AND **UNJV. TEXAS, U.S.A 697
9:50 (6) INTENSE LUMINESCENCE FROM THERMALLY-OXIDIZED POROUS SILICON K.
SHIBATA, K. SAKAMOTO, S. MIYAZAKI AND M. HIROSE, HIROSHIMA UNIV., JAPAN
699 10:00 (7) 38-NM PARTICLE INSPECTION ON BARE WAFER BY SIDE-SCATTERING
LIGHT DETECTION M. NOGUCHI AND Y. KEMBO, HITACHI, JAPAN 701
10:10 (8) THE EFFECTS OF POLISHING DAMAGES AND OXYGEN CONCENTRATIONS ON
THIN GATE OXIDE INTEGRITY (TOI) T. ABE AND Y. KATO*, SHIN-ETSU HANDOTAI
AND *SEIKO INSTRUMENTS, JAPAN 703
10:20 (9) ENHANCED CARBON INCORPORATION IN INGAAS GROWN AT LOW
TEMPERATURE BY METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE) J.
SHIRAKASHI, E. TOKUMITSU, M. KONAGAI, A. MIYANO, R.T. YOSHIOKA, S.
NOZAKI AND K.
TAKAHASHI, TOKYO INST. TECH., JAPAN 705
10:30 (10) PHOTOPUMPED BLUE LASERS IN ZNSSE-ZNMGSSE DOUBLE
HETEROSTRUCTURES OPERATING UP TO 500K Y. MORINAGA, H. OKUYAMA AND K.
AKIMOTO, SONY, JAPAN 707
10:40 (11) EXPERIMENTS ON FUNCTIONAL SUPERCONDUCTING ELECTRON-WAVE
DEVICE M. HATANO, K. SAITO, T. NISHINO AND K. TAKAGI, HITACHI, JAPAN 709
10:50 (12) DEMONSTRATION OF A DQW RESONANT INTERBAND TUNNELING DIODE
WITH A 300K PEAK-TO-VALLEY RATIO OVER 100 D.J. DAY, J. LU*, R.Q. YANG*,
M. SWEENY** AND J.M. XU*, VARIAN, U.S.A., *UNIV.
TORONTO, CANADA AND **ZYTRON, U.S.A 711
SYMPOSIUM III: QUANTUM EFFECTS IN SEMICONDUCTORS AND SUPERCONDUCTORS:
PHYSICS AND DEVICES (11:20-17:50)
11:20 (0) INTRODUCTORY TALK BY SYMPOSIUM ORGANIZERS 11:25 (1) NEW
FRONTIER IN SUPERCONDUCTING DEVICES (INVITED) M. SUGAHARA AND N,
YOSHIKAWA, YOKOHAMA NAT L UNIV., JAPAN 713
11:55 (2) SEMICONDUCTING YBA2CU306 FILMS: A NEW MATERIAL B. ULLRICH, I.
KULAC, H. PINT, G. LEISING AND H. KAHLERT, TECH. UNIV. GRAZ, AUSTRIA 716
12:10 (3) ANISOTROPIC TRANSPORT PROPERTIES OBSERVED IN BI2SR2CACU2OX
SINGLE CRYSTAL FILMS J. FUJITA, T. SATOH, T. YOSHITAKE, J.S. TSAI AND H.
TSUGE, NEC, JAPAN 718
XXVU
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12:25 (4) PREPARATION AND CHARACTERISTICS OF A SUPERCONDUCTING BASE
TRANSISTOR WITH AN AU/ BA, XKXBI03/NIOBIUM-DOPED SRTI03 STRUCTURE H.
SUZUKI, S. SUZUKI, M. IYORI, T. YAMAMOTO, K. TAKAHASHI, T. USUKI, Y.
YOSHISATO AND S. NAKANO, SANYO, JAPAN 720
12:40 (5) FABRICATION AND INVESTIGATION OF ELECTRICAL PROPERTY OF
SCHOTTKY JUNCTION USING (BA, RB)BI03 THIN FILM M. OGIHARA, F. TODA, R.
KAWASAKI, K. HASHIMOTO, T. YAMADA AND H. ABE, OKI, JAPAN.. .723 14:00
(6) SINGLE ELECTRON TUNNELING UP TO 300K (INVITED)
C. SCHONENBERGER AND H. VAN HOUTEN, PHILIPS, THE NETHERLANDS 726
14:30 (7) EFFECTIVE INTERFERENCE AREA OF UNIVERSAL CONDUCTANCE
FLUCTUATIONS IN NARROW GAAS/ ALGAAS WIRES Y. OCHIAI, T. ONISHI*. M.
KAWABE*, K. ISHIBASHI**, JP. BIRD**, Y. AOYAGI** AND T. SUGANO**, CHIBA
UNIV., *UNIV. TSUKUBA AND **RIKEN, JAPAN 729
14:45 (8) WIGNER FUNCTION MODEL OF NONLINEAR QUANTUM TRANSPORT IN A
SPLIT-GATE ELECTRON WAVEGUIDE H. TSUCHIYA, M. OGAWA AND T. MIYOSHI, KOBE
UNIV., JAPAN 732
15:00 (9) SINGLE ELECTRON TUNNELING OBSERVED IN A ID TUNNEL JUNCTION
ARRAY AT ROOM TEMPERATURE H. NEJOH AND M. AONO, JRDC, JAPAN 735
15:15 (10) A NEW SINGLE ELECTRON TRANSISTOR S.Y. CHOU AND Y. WANG, UNIV.
MINNESOTA, U.S.A 738
15:30 (11) A SINGLE TRANSISTOR STATIC MEMORY CELL: CIRCUIT APPLICATION
OF A NEW QUANTUM TRANSISTOR C.H. YANG, J. CHEN, R.A. WILSON AND C.E.C.
WOOD, UNIV. MARYLAND, U.S.A 741 16:05 (12) FABRICATION OF GAAS
ARROWHEAD-LIKE QUANTUM WIRES BY MOCVD SELECTIVE GROWTH AND THEIR OPTICAL
PROPERTIES
S. TSUKAMOTO, Y. NAGAMUNC, M. NISHIOKA AND Y. ARAKAWA, UNIV. TOKYO,
JAPAN 744 16:20 (13) CAN WE REDUCE ELECTRON-ELECTRON SCATTERING TO
INCREASE ELECTRON COHERENCE LENGTH AND REDUCE NOISE IN QUANTUM WAVE
DEVICES?
G. FASOL, UNIV. TOKYO, JAPAN 747
16:35 (14) NUMERICAL STUDY OF THE INTERFERENCE EFFECTS OF THE ELECTRON
WAVES SCATTERED BY IMPURITIES IN THE QUASI ONE-DIMENSIONAL SYSTEM S.
NONOYAMA, A. NAKAMURA*, Y. AOYAGI, T. SUGANO AND A. OKIJI*, RIKEN AND
*OSAKA UNIV., JAPAN 750
16:50 (15) TRANSPORT PROPERTIES OF BALLISTIC QUANTUM WIRE T. ITOH, N.
SANO AND A. YOSHII, NTT, JAPAN 753
17:05 (16) ONE-DIMENSIONAL ELECTRON GAS SYSTEMS BY PERIODIC BENDING OF
N-ALGAAS/U-GAAS HETEROINTERFACES A. SAWADA AND T. USAGAWA, HITACHI,
JAPAN 756
17:20 (17) THE IN-PLANE-GATE TRANSISTOR: DEVICE SIMULATION AND DESIGN OF
THE 1PG E. STEFANOV, A. ASENOV*. F. KOCH, U. MCINERS**, B.E. MAILC**, C.
WOLK** AND H. BRUGGER**, TECH. UNIV. MUNICH, *UNIV. GLASGOW AND
**DAIMLER-BCNZ RES. LAB., F.R.G 759
17:35 (18) BALLISTIC TRANSPORT IN 0.05 //M-GATE ALGAAS/GAAS MODFET T.
UEDA, K. ITAKURA, K. MIYATSUJI, T. TANAKA, D. UEDA AND C. HAMAGUCHI*,
MATSUSHITA ELEC. AND *OSAKA UNIV., JAPAN 762
XXVLLL
|
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| bvnumber | BV012532967 |
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| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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| illustrated | Illustrated |
| indexdate | 2024-07-09T18:29:14Z |
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| language | English |
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| spelling | Conference on Solid State Devices and Materials 24 1992 Tsukuba Verfasser (DE-588)5117430-3 aut Extended abstracts of the 1992 International Conference on Solid State Devices and Materials August 26 - 28, 1992, Tsukuba, Tsukuba Center Building Solid state devices and materials Tokyo Japan Society of Applied Physics 1992 XXVIII, 772 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Elektronisches Bauelement (DE-588)4014360-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 Tsukuba gnd-content Elektronisches Bauelement (DE-588)4014360-0 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008509460&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Extended abstracts of the 1992 International Conference on Solid State Devices and Materials August 26 - 28, 1992, Tsukuba, Tsukuba Center Building Elektronisches Bauelement (DE-588)4014360-0 gnd |
| subject_GND | (DE-588)4014360-0 (DE-588)1071861417 |
| title | Extended abstracts of the 1992 International Conference on Solid State Devices and Materials August 26 - 28, 1992, Tsukuba, Tsukuba Center Building |
| title_alt | Solid state devices and materials |
| title_auth | Extended abstracts of the 1992 International Conference on Solid State Devices and Materials August 26 - 28, 1992, Tsukuba, Tsukuba Center Building |
| title_exact_search | Extended abstracts of the 1992 International Conference on Solid State Devices and Materials August 26 - 28, 1992, Tsukuba, Tsukuba Center Building |
| title_full | Extended abstracts of the 1992 International Conference on Solid State Devices and Materials August 26 - 28, 1992, Tsukuba, Tsukuba Center Building |
| title_fullStr | Extended abstracts of the 1992 International Conference on Solid State Devices and Materials August 26 - 28, 1992, Tsukuba, Tsukuba Center Building |
| title_full_unstemmed | Extended abstracts of the 1992 International Conference on Solid State Devices and Materials August 26 - 28, 1992, Tsukuba, Tsukuba Center Building |
| title_short | Extended abstracts of the 1992 International Conference on Solid State Devices and Materials |
| title_sort | extended abstracts of the 1992 international conference on solid state devices and materials august 26 28 1992 tsukuba tsukuba center building |
| title_sub | August 26 - 28, 1992, Tsukuba, Tsukuba Center Building |
| topic | Elektronisches Bauelement (DE-588)4014360-0 gnd |
| topic_facet | Elektronisches Bauelement Konferenzschrift 1992 Tsukuba |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008509460&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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