Nitride semiconductors and devices: with 23 tables
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
Berlin [u.a.]
Springer
1999
|
| Schriftenreihe: | Springer series in materials science
32 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXIV, 488 S. Ill., graph. Darst. |
| ISBN: | 354064038X |
Internformat
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| 245 | 1 | 0 | |a Nitride semiconductors and devices |b with 23 tables |c Hadis Morkoç |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 1999 | |
| 300 | |a XXIV, 488 S. |b Ill., graph. Darst. | ||
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| 650 | 7 | |a Lasers à semiconducteurs |2 ram | |
| 650 | 7 | |a Semiconducteurs |2 ram | |
| 650 | 4 | |a Gallium nitride | |
| 650 | 4 | |a Light emitting diodes | |
| 650 | 4 | |a Nitrides | |
| 650 | 4 | |a Semiconductor lasers | |
| 650 | 4 | |a Semiconductors |x Materials | |
| 650 | 0 | 7 | |a Verbindungshalbleiter |0 (DE-588)4062623-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nitride |0 (DE-588)4171929-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Lumineszenzdiode |0 (DE-588)4125154-4 |2 gnd |9 rswk-swf |
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| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
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Datensatz im Suchindex
| _version_ | 1804127144445476864 |
|---|---|
| adam_text | HADIS MORKO^ NITRIDE SEMICONDUCTORS AND DEVICES WITH 271 FIGURES AND 23
TABLES SPRINGER CONTENTS FOREWORD. A VIEW OF THE PAST, AND A LOOK INTO
THE FUTURE BY A PIONEER BY JACQUES I. PANKOVE XV 1. INTRODUCTION 1 2.
GENERAL PROPERTIES OF NITRIDES 8 2.1 CRYSTAL STRUCTURE OF NITRIDES 8 2.2
GALLIUM NITRIDE 11 2.2.1 CHEMICAL PROPERTIES OF GAN 13 2.2.2 THERMAL AND
MECHANICAL PROPERTIES OF GAN 14 2.3 ALUMINUM NITRIDE 17 2.3.1 THERMAL
AND CHEMICAL PROPERTIES OF A1N 17 2.3.2 MECHANICAL PROPERTIES OF A1N 19
2.3.3 ELECTRICAL PROPERTIES OF A1N 20 2.3.4 OPTICAL PROPERTIES OF A1N 21
2.4 INDIUM NITRIDE 23 2.4.1 CRYSTAL STRUCTURE OF INN 24 2.4.2 MECHANICAL
AND THERMAL PROPERTIES OF INN 25 2.4.3 ELECTRICAL PROPERTIES OF INN 25
2.4.4 OPTICAL PROPERTIES OF INN 26 2.5 TERNARY AND QUATERNARY ALLOYS 26
2.5.1 ALGAN ALLOY 27 2.5.2 INGAN ALLOY 29 2.5.3 INALN ALLOY 31 2.6
SUBSTRATES FOR NITRIDE EPITAXY 31 2A APPENDIX: FUNDAMENTAL DATA FOR
NITRIDE SYSTEMS 39 3 . ELECTRONIC BAND STRUCTURE OF BULK AND QW NITRIDES
45 3.1 BAND-STRUCTURE CALCULATIONS 45 3.2 EFFECT OF STRAIN ON THE BAND
STRUCTURE OF GAN 51 3.3 KP THEORY AND THE QUASI-CUBIC MODEL 52 3.4
QUASI-CUBIC APPROXIMATION 54 3.5 CONFINED STATES 57 3.6 CONDUCTION BAND
61 IX 3.7 VALENCE BAND 63 3.8 EXEITON BINDING ENERGY IN QUANTUM WELLS 66
3.9 POLARIZATION EFFECTS 68 3A APPENDIX 80 GROWTH OF NITRIDE
SEMICONDUCTORS 83 4.1 BULK GROWTH 84 4.2 SUBSTRATES USED 87 4.2.1
CONVENTIONAL SUBSTRATES 88 4.2.2 COMPLIANT SUBSTRATES 88 4.2.3 VAN DER
WAALS SUBSTRATES 89 4.3 SUBSTRATE PREPARATION 89 4.4 SUBSTRATE
TEMPERATURE 94 4.5 EPITAXIAL RELATIONSHIP TO SAPPHIRE 95 4.6 GROWTH BY
HYDRIDE VAPOR PHASE EPITAXY (HVPE) 98 4.7 GROWTH BY OMVPE (MOCVD) 99
4.7.1 SOURCES 100 4.7.2 BUFFER LAYERS 102 4.7.3 LATERAL GROWTH 109 4.7.4
GROWTH ON SPINEL (MGAL 2 0 4 ) 112 4.8 MOLECULAR BEAM EPITAXY 112 4.8.1
MBE GROWTH SYSTEMS 113 4.8.2 PLASMA-ENHANCED MBE 114 4.8.3 REACTIVE-ION
MBE 117 4.8.4 REACTIVE MBE 118 4.8.5 MODELING OF THE MBE-LIKE GROWTH 125
4.9 GROWTH ON 6H-SIC (0001) 127 4.10 GROWTH ON ZNO 129 4.11 GROWTH ONGAN
136 4.12 GROWTH OF P-TYPE GAN 137 4.13 GROWTH OF N-TYPE INN 139 4.14
GROWTH OF N-TYPE TERNARY AND QUATERNARY ALLOYS 139 4.15 GROWTH OF P-TYPE
TERNARY AND QUATERNARY ALLOYS 140 4.16 CRITICAL THICKNESS 141 DEFECTS
AND DOPING 149 5.1 DISLOCATIONS 150 5.2 STACKING-FAULT DEFECTS 151 5.3
POINT DEFECTS AND AUTODOPING 153 5.3.1 VACANCIES, ANTISITES AND
INTERSTITIALS 154 5.3.2 ROLE OF IMPURITIES AND HYDROGEN 160 5.3.3
OPTICAL SIGNATURE OF DEFECTS IN GAN 163 5.4 INTENTIONAL DOPING 165 5.4.1
N-TYPE DOPING WITH SILICON, GERMANIUM AND SELENIUM 165 5.4.2 P-TYPE
DOPING 167 A) DOPING WITH MG 168 5.4.3 OPTICAL MANIFESTATION OF GROUP-II
DOPANT-INDUCED DEFECTS IN GAN 179 A) DOPING WITH BERYLLIUM 182 B) DOPING
WITH MERCURY 182 C) DOPING WITH CARBON 183 D) DOPING WITH ZINC 184 E)
DOPING WITH CALCIUM 184 F) DOPING WITH RARE EARTHS 184 5.4.4 ION
IMPLANTATION AND DIFFUSION 185 5.5 DEFECT ANALYSIS BY DEEP-LEVEL
TRANSIENT SPECTROSCOPY .. 186 5.6 SUMMARY 190 6. METAL CONTACTS TO GAN
191 6.1 A PRIMER FOR SEMICONDUCTOR-METAL CONTACTS 192 6.2 CURRENT FLOW
IN METAL-SEMICONDUCTOR JUNCTIONS 196 6.2.1 THE REGIME DOMINATED BY
THERMIONIC EMISSION .. 197 6.2.2 THERMIONIC FIELD-EMISSION REGIME 198
6.2.3 DIRECT TUNNELING REGIME 199 6.2.4 LEAKAGE CURRENT 200 6.2.5 THE
CASE OF A FORWARD-BIASED P-N JUNCTION 200 6.3 RESISTANCE OF AN OHMIC
CONTACT 202 6.3.1 SPECIFIC CONTACT RESISTIVITY 203 6.3.2 SEMICONDUCTOR
RESISTANCE 204 6.4 DETERMINATION OF THE CONTACT RESISTIVITY 206 6.5
OHMIC CONTACTS TO GAN 207 6.5.1 NON-ALLOYED OHMIC CONTACTS 208 6.5.2
ALLOYED OHMIC CONTACTS 209 6.5.3 MULTI-LAYER OHMIC CONTACTS 209 6.6
STRUCTURAL ANALYSIS 213 6.7 OBSERVATIONS 215 7. DETERMINATION OF
IMPURITY AND CARRIER CONCENTRATIONS ... 216 7.1 IMPURITY BINDING ENERGY
216 7.2 CONDUCTIVITY TYPE: HOT PROBE AND HALL MEASUREMENTS . . . 217 7.3
DENSITY OF STATES AND CARRIER CONCENTRATION 219 7.4 ELECTRON AND HOLE
CONCENTRATIONS 223 7.5 TEMPERATURE DEPENDENCE OF THE HOLE CONCENTRATION
.... 224 XI 7.6 TEMPERATURE DEPENDENCE OF THE ELECTRON CONCENTRATION .
227 7.7 MULTIPLE OCCUPANCY OF THE VALENCE BANDS 229 7A APPENDIX: FERMI
INTEGRAL 232 8. CARRIER TRANSPORT 233 8.1 IONIZED IMPURITY SCATTERING
235 8.2 POLAR-OPTICAL PHONON SCATTERING 236 8.3 PIEZOELECTRIC SCATTERING
239 8.4 ACOUSTIC PHONON SCATTERING 239 8.5 ALLOY SCATTERING 242 8.6 THE
HALL FACTOR 248 8.7 OTHER METHODS USED FOR CALCULATING THE MOBILITY IN
N-GAN 249 8.8 MEASURED VIS. A VIS. CALCULATED MOBILITIES IN GAN 251 8.9
TRANSPORT IN 2D N-TYPE GAN 257 8.10 TRANSPORT IN P-TYPE GAN AND ALGAN
258 8.11 CARRIER TRANSPORT IN INN 260 8.12 CARRIER TRANSPORT IN A1N 262
8.12.1 TRANSPORT IN UNINTENSIONALLY-DOPED AND HIGH-RESISTIVITY GAN 263
8.13 OBSERVATION 266 9. THE P-N JUNCTION 267 9.1 HETEROJUNCTIONS 267 9.2
BAND DISCONTINUITIES 268 9.2.1 GAN/ALN HETEROSTRUCTURES 270 9.2.2
GAN/INN AND ALN/INN 271 9.3 ELECTROSTATIC CHARACTERISTICS OF P-N
HETEROJUNCTIONS .... 275 9.4 CURRENT-VOLTAGE CHARACTERISTICS ON P-N
JUNCTIONS 278 9.4.1 GENERATION-RECOMBINATION CURRENT 279 9.4.2 SURFACE
EFFECTS 282 9.4.3 DIODE CURRENT UNDER REVERSE BIAS 284 9.4.4 EFFECT OF
THE ELECTRIC FIELD ON THE GENERATION CURRENT 284 9.4.5 DIFFUSION CURRENT
285 9.4.6 DIODE CURRENT UNDER FORWARD BIAS 287 9.5 CALCULATION AND
EXPERIMENTAL I-V CHARACTERISTICS OF GAN BASED P-N JUCTIONS 288 9.6
CONCLUDING REMARKS 294 10. OPTICAL PROCESSES IN NITRIDE SEMICONDUCTORS
295 10.1 ABSORPTION AND EMISSION 296 XII 10.2 BAND-TO-BAND TRANSITIONS
300 10.2.1 EXCITONUC TRANSITIONS 302 10.3 OPTICAL TRANSITIONS IN GAN 303
10.3.1 EXCITONIC TRANSITIONS IN GAN 303 A) FREE EXCITONS 303 B) BOUND
EXCITONS 317 C) EXCITON RECOMBINATION DYNAMICS 318 D) HIGH INJECTION
LEVELS 322 10.3.2 FREE-TO-BOUND TRANSITIONS 322 10.3.3 DONOR-ACCEPTOR
TRANSITIONS 323 10.3.4 DEFECT-RELATED TRANSITIONS 326 A) YELLOW
LUMINESCENCE 326 B) GROUP-II ELEMENT RELATED TRANSITIONS 329 10.4
OPTICAL PROPERTIES OF NITRIDE HETEROSTRUCTURES 331 10.4.1 GAN/ALGAN
HETEROSTRUCTURES 332 10.4.2 INGAN/GAN AND INGAN/INGAN HETEROSTRUCTURES .
336 11 . LIGHT-EMITTING DIODES 340 11.1 CURRENT-CONDUCTION MECHANISM IN
LED-LIKE STRUCTURES . 341 11.2 OPTICAL OUTPUT POWER 344 11.3 LOSSES AND
EFFICIENCY 345 11.4 VISIBLE-LIGHT EMITTING DIODES 350 11.5 NITRIDE LED
PERFORMANCE 352 11.6 ON THE NATURE OF LIGHT EMISSION IN NITRIDE-BASED
LEDS . 360 11.6.1 PRESSURE DEPENDENCE OF SPECTRA 360 11.6.2 CURRENT AND
TEMPERATURE DEPENDENCE OF SPECTRA . 363 11.6.3 I-V CHARACTERISTICS OF
NITRIDE LEDS 366 11.7 LED DEGRADATION 370 11.8 LUMINESCENCE CONVERSION
AND WHITE- LIGHT GENERATION WITH NITRIDE LEDS 373 11.9 ORGANIC LEDS 376
12. SEMICONDUCTOR LASERS 379 12.1 A PRIMER TO THE PRINCIPLES OF LASERS
381 12.2 FUNDAMENTALS OF SEMICONDUCTOR LASERS 382 12.3 WAVEGUIDING 389
12.3.1 ANALYTICAL SOLUTION TO THE WAVEGUIDE PROBLEM . . . 390 12.3.2
NUMERICAL SOLUTION OF THE WAVEGUIDE PROBLEM . . . 394 12.3.3 FAR-FIELD
PATTERN 402 12.4 LOSS AND THRESHOLD 405 12.5 OPTICAL GAIN 406 12.5.1
GAIN IN BULK LAYERS 407 12.5.2 GAIN IN QUANTUM WELLS 410 XIII 12.6
COULOMBIC EFFECTS 413 12.7 GAIN CALCULATIONS FOR GAN 417 12.7.1 OPTICAL
GAIN IN BULK GAN 418 12.7.2 GAIN IN GAN QUANTUM WELLS 419 12.7.3 GAIN
CALCULATIONS IN WZ GAN QW WITHOUT STRAIN . 419 12.7.4 GAIN CALCULATIONS
IN WZ QW WITH STRAIN 420 12.7.5 GAIN IN ZB QW STRUCTURES WITHOUT STRAIN
423 12.7.6 GAIN IN ZB QW STRUCTURES WITH STRAIN 424 A) PATHWAYS THROUGH
EXCITONS AND LOCALIZED STATES 425 12.7.7 MEASUREMENT OF GAIN IN NITRIDES
431 A) GAIN MEASUREMENT VIA OPTICAL PUMPING 431 B) GAIN MEASUREMENT VIA
ELECTRICAL INJECTION (PUMP) AND AN OPTICAL PROBE 437 12.8 THRESHOLD
CURRENT 439 12.9 ANALYSIS OF INJECTION LASERS WITH SIMPLIFYING
ASSUMPTIONS 440 12.10 RECOMBINATION LIFETIME 442 12.11 QUANTUM
EFFICIENCY 448 12.12 GAIN SPECTRA OFLNGAN INJECTION LASERS 450 12.13
OBSERVATIONS 456 12.14 A SUCCINCT REVIEW OF THE LASER EVOLUTION IN
NITRIDES ... 457 REFERENCES 461 SUBJECT INDEX 485 XIV
|
| any_adam_object | 1 |
| author | Morkoç, Hadis 1947- |
| author_GND | (DE-588)120855003 |
| author_facet | Morkoç, Hadis 1947- |
| author_role | aut |
| author_sort | Morkoç, Hadis 1947- |
| author_variant | h m hm |
| building | Verbundindex |
| bvnumber | BV012498190 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 3100 UQ 1100 ZN 4100 |
| ctrlnum | (OCoLC)40939963 (DE-599)BVBBV012498190 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV012498190 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:28:41Z |
| institution | BVB |
| isbn | 354064038X |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008485386 |
| oclc_num | 40939963 |
| open_access_boolean | |
| owner | DE-703 DE-355 DE-BY-UBR DE-634 DE-1050 DE-83 DE-11 |
| owner_facet | DE-703 DE-355 DE-BY-UBR DE-634 DE-1050 DE-83 DE-11 |
| physical | XXIV, 488 S. Ill., graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in materials science |
| series2 | Springer series in materials science |
| spelling | Morkoç, Hadis 1947- Verfasser (DE-588)120855003 aut Nitride semiconductors and devices with 23 tables Hadis Morkoç Berlin [u.a.] Springer 1999 XXIV, 488 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 32 Diodes électroluminescentes ram Gallium - Composés ram Lasers à semiconducteurs ram Semiconducteurs ram Gallium nitride Light emitting diodes Nitrides Semiconductor lasers Semiconductors Materials Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Lumineszenzdiode (DE-588)4125154-4 gnd rswk-swf Halbleiterlaser (DE-588)4139556-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Nitride (DE-588)4171929-3 s Verbindungshalbleiter (DE-588)4062623-4 s DE-604 Galliumnitrid (DE-588)4375592-6 s Lumineszenzdiode (DE-588)4125154-4 s Halbleiterlaser (DE-588)4139556-6 s Springer series in materials science 32 (DE-604)BV000683335 32 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008485386&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Morkoç, Hadis 1947- Nitride semiconductors and devices with 23 tables Springer series in materials science Diodes électroluminescentes ram Gallium - Composés ram Lasers à semiconducteurs ram Semiconducteurs ram Gallium nitride Light emitting diodes Nitrides Semiconductor lasers Semiconductors Materials Verbindungshalbleiter (DE-588)4062623-4 gnd Nitride (DE-588)4171929-3 gnd Lumineszenzdiode (DE-588)4125154-4 gnd Halbleiterlaser (DE-588)4139556-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)4062623-4 (DE-588)4171929-3 (DE-588)4125154-4 (DE-588)4139556-6 (DE-588)4375592-6 |
| title | Nitride semiconductors and devices with 23 tables |
| title_auth | Nitride semiconductors and devices with 23 tables |
| title_exact_search | Nitride semiconductors and devices with 23 tables |
| title_full | Nitride semiconductors and devices with 23 tables Hadis Morkoç |
| title_fullStr | Nitride semiconductors and devices with 23 tables Hadis Morkoç |
| title_full_unstemmed | Nitride semiconductors and devices with 23 tables Hadis Morkoç |
| title_short | Nitride semiconductors and devices |
| title_sort | nitride semiconductors and devices with 23 tables |
| title_sub | with 23 tables |
| topic | Diodes électroluminescentes ram Gallium - Composés ram Lasers à semiconducteurs ram Semiconducteurs ram Gallium nitride Light emitting diodes Nitrides Semiconductor lasers Semiconductors Materials Verbindungshalbleiter (DE-588)4062623-4 gnd Nitride (DE-588)4171929-3 gnd Lumineszenzdiode (DE-588)4125154-4 gnd Halbleiterlaser (DE-588)4139556-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | Diodes électroluminescentes Gallium - Composés Lasers à semiconducteurs Semiconducteurs Gallium nitride Light emitting diodes Nitrides Semiconductor lasers Semiconductors Materials Verbindungshalbleiter Nitride Lumineszenzdiode Halbleiterlaser Galliumnitrid |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008485386&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000683335 |
| work_keys_str_mv | AT morkochadis nitridesemiconductorsanddeviceswith23tables |