Proceedings of the Topical Workshop on Heterostructure of Microelectronics: Sapporo Therme International Hotel, Sapporo, Japan, August 18 - 21
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| Format: | Conference Proceeding Book |
| Language: | Undetermined |
| Published: |
Oxford
Pergamon
1997
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| Series: | Solid-state electronics
41,10 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Einzelaufnahme eines Zeitschr.-H. |
| Physical Description: | VIII S., S.1389 - 1686 Ill., graph. Darst. |
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| adam_text | SPECIAL
ISSUE
PROCEEDINGS
OF THE TOPICAL WORKSHOP ON
HETEROSTRUCTURE OF MICROLECTRONICS
CONTENTS
Foreword
.....................................................................................................................................
vii
Committee
................................................................................................................................... viii
APPLICATIONS OF HETEROSTRUCTURE DEVICES I
A. Scavennec and R.
Lefèvre:
Пі
-V
heterostructure microelectronics for electronic
and optoelectronic systems in Europe
..................................................................................... 1389
J. Sitch: HBTs in telecommunications
................................................................................... 1397
APPLICATIONS OF HETEROSTRUCTURE DEVICES II
M. Berroth, V.
Hurm,
M. Lang, Z. Lao, A. Thiede, Z.-G. Wang, A.
Bangert,
W.
Bronner,
Α.
Hülsmann,
G.
Kaufel,
К.
Köhler,
В.
Raynor and T.
Jakobus:
HEMT circuits
for signal-data
processing
.............................................................................. 1407
S.
Chandrasekhar:
Optoelectronic system integration using InP-based HBTs for
lightwave communications
........................................................................................................ 1413
R. Yu, S. Beccue, M. F.
Chang,
K. Nary, R.
Nubling,
K.
Pedrotti,
R
Pierson,
K.
Runge, N.
H. Sheng, P.
Thomas, P. Zampardi and
К. С
Wang: HBT devices and
circuits for signal and data processing
.................................................................................... 1419
J. K. Abrokwah, B.
Bernhardt
and M. Lamacchia: Complementary GaAs
(CGaAs™): new enhancements
.............................................................................................. 1433
MANUFACTURABILITY AND RELIABILITY I
H. Hasegawa: Interface-controlled Schottky barriers on InP and related materials
...... 1441
M. Hirano, K. Nishikawa, I. ToYODA, S. AoYAMA, S. SuGiTANi and K. Yamasaki:
Three-dimensional interconnect technology for ultra-compact MMICs
............................ 1451
T. Kimura, R. Shigemasa and T. Ohshima: Electron irradiation during Schottky gate
metal evaporation and its effect on the stability of InGaAs/AlGaAs HEMTs
................. 1457
[continued
IN
Res. Alen.
Cam.
Sci. Abstr..
Chem. Abstr. Serv..
Curr.
Cont.
Phys.
Chem.
&
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Sci..
Curr.
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Eng. Tech. 4
Appi. Sci.. Curr.
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Indx.
Eng.
X.
INSPEC
Dala,
PASCAL-CNRS
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Curr.
Cont.
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Cil.
Indx.
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Coni.
SCISEARCH
Data. SSSA CJSA
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PERGAMON issN
оозв-иоі
SSELAS 41(10) 1389-1686(1997)
CO
N
TEN TS
continued]
К.
lizuKA,
T.
Hashizume and
H.
Hasegawa: Small-signal response of interface states at
passivated InGaAs surfaces from low frequencies up to microwave frequencies
............. 1463
T. MizuTANi, K. Maezawa, J.-I. Nozaki, M. Arakawa and
S. Kishimoto: A
highly
mismatched
InvGa,„.vAs/AlGaAs
(0
^
χ
ѓ
0.5)
pseudomorphic
HEMT
on GaAs
substrate using an Inv 2Ga,_A 2 As buffer layer
......................................................................
1469
D. Inoue, S. Matsushita, K. Matsumura, M. Sawada, K. Yodoshi and Y. Harada:
Influence of rapid thermal annealing on modulation doped structures
............................. 1475
M.
Komáru,
K. Yajima. H. Sasaki, T. Katoh, T. Kashiwa, T.
Asano,
T.
Takagi,
Y.
Мггѕи,
K. Matsuzaki,
N.
Němoto,
E.
Nakamura,
T.
Akutsu and S. Matsuda:
Gamma dose effect on low noise AlGaAs/InGaAs PHEMT at millimeter-wave frequency
1481
Si/SiGe TECHNOLOGY
H. Schumacher, U.
Erben
and W.
Dürr: SiGe
heterojunction bipolar transistors
—
the
noise perspective
.........................................................................................................................
14°5
D.
Terpstra,
W.
B.
De
Boer and J. W.
Slotboom:
High-performance Si-SiGe HBTs
SiGe-technology development in Esprit Project
8001
TIBIA: An overview
...................... 1493
D.
A. Sunderland,
D.
С
Ahlgren, M. M. Gilbert, S.-J. Jeng, J. C. Malinowski,
D. Nguyen-Ngoc, K. T.
Schonenberg,
К.
J. Stein,
В.
S. Meyerson
and D. L.
Harame: Manufacturability
and applications of
SiGe HBT
technology
.......................... 1503
D. J. Paul. J. M.
Ryan, P.
V. Kelly, G. M.
Crean,
J. M.
Fernández,
M.
Pepper,
A. N.
Broers
and B.
A. Joyce: Investigations of electron-beam and optical induced
damage in high mobility SiGe heterostmctures
..................................................................... 1509
NOVEL DEVICES AND TECHNOLOGIES
G. I. Haddad and P. Mazumder: Tunneling devices and applications in high
functionality /speed digital circuits
........................................................................................... 1515
R. Koizumi, T. Saitoh and K. Yoh: Fabrication of
/Л
-gate InAs-channel
HEMT
based
onlnP
.......................................................................................................................................... 1525
F. Schuermeyer: Characterization of fully fabricated PHEMTs using photoelectric
techniques
.................................................................................................................................... 1529
J.
Herfort
and Y. Hirayama: High density and high mobility transport characteristics
in gated undoped
GaAs/A^Ga^As
heterostructures
......................................................... 1535
[continued
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PERGAMON ISSN 0038-noi
SSELAS 41(10) 1389-1686 (1997)
CONTENTS— continued]
U.
König,
M.
Glück,
A.
Gruhle,
G.
Hock,
E.
Kohn,
В.
Bozon,
D.
Neurnbergk,
T.
Ostermann
and R.
Hagelauer: Design
rules for
η
-type
SiGe
hetero FETs
............. 1541
WIDE BAND-GAP DEVICES
S.
С
Binari,
W.
Kruppa,
H.
В.
Dietrich,
G.
Kelner,
Α. Ε.
Wickenden and
J.
Α.
Freitas Jr:
Fabrication and characterization of GaN FETs
............................................. 1549
M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm,
W. J.
Schaff
and L. F. Eastman: GaN based heterostructure for high power devices.
1555
R. J. Trew, M. W. Shin and V.
Gatto:
High power applications for GaN-based devices
1561
Y.-F. Wu, B. P. Keller, S. Keller, D. Kapolnek, P. Kozodoy, S. P. Denbaars and
U. K. Mishra: High power AlGaN/GaN HEMTs for microwave applications
.............. 1569
POWER DEVICE TECHNOLOGIES I
S.
Arai
and H. Tokuda: Millimeter-wave power HEMTs
................................................. 1575
K. Y.
Hur,
R. A. McTaggart, P. J.
Lemonias
and W. E. Hoke: Development of
double recessed AlInAs/GalnAs/InP HEMTs for millimeter wave power applications..
1581
N.
Iwata, K. Yamaguchi and M. Kuzuhara: Double-doped power heterojunction
FET
for
1.5
V digital cellular applications
............................................................................. 1587
H. Furukawa, T. Tanaka, H. Takenaka, T. Ueda, T. Fukui and D. Ueda: High
power-added efficiency and low distortion GaAs power
FET
employing spike-gate
structure
....................................................................................................................................... 1599
MANUFACTURABILITY AND RELIABILITY II
M. Hafizi: HBT
1С
manufacturability and reliability
......................................................... 1591
O. Ueda, A. Kawano, T. Takahashi, T. Tomioka, T.
Fujii
and S.
Sasa:
Current status
of reliability of InGaP/GaAs HBTs
........................................................................................ 1605
T. Oka, K. Ouchi, K. Mochizuki and T. Nakamura: High speed InGaP/GaAs HBTs
of
159
GHz
................................................................................................................ 1611
M. Yanagihara, H. Sakai, Y. Ota and A. Tamura: High /max AlGaAs/GaAs HBT
with L-shaped base electrode and its application to 50GHz amplifier
.............................. 1615
[continued
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PERGAMON issN
оюв-нві
SSELAS 41(10) 1389-1686 (1997)
COSTENTS-
continued/
MANUFACTURABILITY
AND RELIABILITY
III
T. SoNODA, Y. Yamamoto,
N.
Hayafuji, H. Yoshida, H.
Sasaki,
T. Kitano,
S. Takamiya and M.
Оѕтиво:
Manufacturability and reliability of InP HEMTs
........... 1621
D. P. Docter, J. J.
Brown,
M.
Ни,
M. Matloubian, J.
Speck X.
Wu and D. E.
Grider: In:Ali_;As/Inv.Gai_,.As
lattice
constant
engineered
HEMTs on GaAs
............ 1629
D. Pavlidis, E. Alekseev, K. Hong and D.
Cur. InP-Based millimeter-wave
PIN diodes
for switching and phase-shifting
applications
........................................................................ 1635
S. Suzuki, Y. Dohmae and H. Hasegawa: Fabrication
and electrical characterization of
InP-based insulated gate power HEMTs using ultrathin Si interface control layer
......... 1641
M. Nihei,
N.
Hara.
H.
Suehiro and S. Kuroda:
0.065
μΐη
Gate InGaP/InGaAs
pseudomorphic HEMTs with highly-doped 11.5nm thick InGaP electron supply layers
1647
T. Enoki, H.
Ito
and Y. Ishii: Reliability study on InAlAs/InGaAs HEMTs with an InP
recess-etch stopper and refractory gate metal
........................................................................ 1651
POWER DEVICE TECHNOLOGIES II
B. Bayraktaroglu: HBT power devices and circuits
......................................................... 1657
С
Bozada,
С
Cerny,
G. De
Salvo, R. Dettmer, J. Ebel, J. Gillespie,
C. Ha v
asy,
T.
Jenkins.
С.
Ito.
К.
Nakano.
С.
Pettiford,
T. Quach, J. Sewell,
G. D.
Via
and R.
Anholt:
Thermal management of microwave power heterojunction bipolar
transistors
.................................................................................................................................... 1667
Y. Ota. S. Yamamoto. T. Yokoyama, H. Masato, M. Nishitsuji, M. Yanagihara
and K. Inoue: Self-aligned emitted power HBT and self-aligned gate power HFET for
low/unity supply voltage operation in PHS handsets
........................................................... 1675
T. Liu, M. Chen,
С
Nguyen and R. Virk: InP-Based DHBT with
90%
power-added
efficiency and
1
W
output power at 2GHz
............................................................................. 1681
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PERGAMON
ISSN 0038-1101
SSELAS
41(10) 1389-1686 (1997)
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| physical | VIII S., S.1389 - 1686 Ill., graph. Darst. |
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| spelling | Topical Workshop on Heterostructure of Microelectronics 2 1996 Sapporo Verfasser (DE-588)5275902-7 aut Proceedings of the Topical Workshop on Heterostructure of Microelectronics Sapporo Therme International Hotel, Sapporo, Japan, August 18 - 21 Oxford Pergamon 1997 VIII S., S.1389 - 1686 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Solid-state electronics 41,10 Einzelaufnahme eines Zeitschr.-H. Heterostruktur-Bauelement (DE-588)4236378-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Heterostruktur-Bauelement (DE-588)4236378-0 s DE-604 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008313680&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the Topical Workshop on Heterostructure of Microelectronics Sapporo Therme International Hotel, Sapporo, Japan, August 18 - 21 Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| subject_GND | (DE-588)4236378-0 (DE-588)1071861417 |
| title | Proceedings of the Topical Workshop on Heterostructure of Microelectronics Sapporo Therme International Hotel, Sapporo, Japan, August 18 - 21 |
| title_auth | Proceedings of the Topical Workshop on Heterostructure of Microelectronics Sapporo Therme International Hotel, Sapporo, Japan, August 18 - 21 |
| title_exact_search | Proceedings of the Topical Workshop on Heterostructure of Microelectronics Sapporo Therme International Hotel, Sapporo, Japan, August 18 - 21 |
| title_full | Proceedings of the Topical Workshop on Heterostructure of Microelectronics Sapporo Therme International Hotel, Sapporo, Japan, August 18 - 21 |
| title_fullStr | Proceedings of the Topical Workshop on Heterostructure of Microelectronics Sapporo Therme International Hotel, Sapporo, Japan, August 18 - 21 |
| title_full_unstemmed | Proceedings of the Topical Workshop on Heterostructure of Microelectronics Sapporo Therme International Hotel, Sapporo, Japan, August 18 - 21 |
| title_short | Proceedings of the Topical Workshop on Heterostructure of Microelectronics |
| title_sort | proceedings of the topical workshop on heterostructure of microelectronics sapporo therme international hotel sapporo japan august 18 21 |
| title_sub | Sapporo Therme International Hotel, Sapporo, Japan, August 18 - 21 |
| topic | Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| topic_facet | Heterostruktur-Bauelement Konferenzschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008313680&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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