Untersuchung der tiefen Störstelle Vanadium in semi-isolierendem 4H- und 6H-SiC mittels des spektralen Lochbrennens:
Saved in:
Bibliographic Details
Main Author: Hecht, Christian (Author)
Format: Book
Language:German
Published: 1998
Subjects:
Online Access:Inhaltsverzeichnis
Item Description:Erlangen-Nürnberg, Univ., Diss., 1998
Physical Description:97 S. Ill., graph. Darst.

There is no print copy available.

Interlibrary loan Place Request Caution: Not in THWS collection! Indexes