Herstellung und Charakterisierung von sub-mym InGaAs-InP High Electron Mobility Transistoren:
Saved in:
| Main Author: | |
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| Format: | Book |
| Language: | German |
| Published: |
1997
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| Subjects: | |
| Item Description: | Aachen, Techn. Hochsch., Diss., 1997. - Auch als: Berichte des Forschungszentrums Jülich. 3381 |
| Physical Description: | X, 122 S. Ill., graph. Darst. |
Staff View
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| 245 | 1 | 0 | |a Herstellung und Charakterisierung von sub-mym InGaAs-InP High Electron Mobility Transistoren |c vorgelegt von Klaus Schimpf |
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Record in the Search Index
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| author | Schimpf, Klaus |
| author_facet | Schimpf, Klaus |
| author_role | aut |
| author_sort | Schimpf, Klaus |
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| building | Verbundindex |
| bvnumber | BV011705023 |
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| ctrlnum | (OCoLC)245619262 (DE-599)BVBBV011705023 |
| discipline | Elektrotechnik |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV011705023 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:14:20Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007892667 |
| oclc_num | 245619262 |
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| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | X, 122 S. Ill., graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| record_format | marc |
| spelling | Schimpf, Klaus Verfasser aut Herstellung und Charakterisierung von sub-mym InGaAs-InP High Electron Mobility Transistoren vorgelegt von Klaus Schimpf 1997 X, 122 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Aachen, Techn. Hochsch., Diss., 1997. - Auch als: Berichte des Forschungszentrums Jülich. 3381 Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf Indiumarsenid (DE-588)4249718-8 gnd rswk-swf HEMT (DE-588)4211873-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content HEMT (DE-588)4211873-6 s Indiumarsenid (DE-588)4249718-8 s Galliumarsenid (DE-588)4019155-2 s Indiumphosphid (DE-588)4161535-9 s DE-604 |
| spellingShingle | Schimpf, Klaus Herstellung und Charakterisierung von sub-mym InGaAs-InP High Electron Mobility Transistoren Galliumarsenid (DE-588)4019155-2 gnd Indiumphosphid (DE-588)4161535-9 gnd Indiumarsenid (DE-588)4249718-8 gnd HEMT (DE-588)4211873-6 gnd |
| subject_GND | (DE-588)4019155-2 (DE-588)4161535-9 (DE-588)4249718-8 (DE-588)4211873-6 (DE-588)4113937-9 |
| title | Herstellung und Charakterisierung von sub-mym InGaAs-InP High Electron Mobility Transistoren |
| title_auth | Herstellung und Charakterisierung von sub-mym InGaAs-InP High Electron Mobility Transistoren |
| title_exact_search | Herstellung und Charakterisierung von sub-mym InGaAs-InP High Electron Mobility Transistoren |
| title_full | Herstellung und Charakterisierung von sub-mym InGaAs-InP High Electron Mobility Transistoren vorgelegt von Klaus Schimpf |
| title_fullStr | Herstellung und Charakterisierung von sub-mym InGaAs-InP High Electron Mobility Transistoren vorgelegt von Klaus Schimpf |
| title_full_unstemmed | Herstellung und Charakterisierung von sub-mym InGaAs-InP High Electron Mobility Transistoren vorgelegt von Klaus Schimpf |
| title_short | Herstellung und Charakterisierung von sub-mym InGaAs-InP High Electron Mobility Transistoren |
| title_sort | herstellung und charakterisierung von sub mym ingaas inp high electron mobility transistoren |
| topic | Galliumarsenid (DE-588)4019155-2 gnd Indiumphosphid (DE-588)4161535-9 gnd Indiumarsenid (DE-588)4249718-8 gnd HEMT (DE-588)4211873-6 gnd |
| topic_facet | Galliumarsenid Indiumphosphid Indiumarsenid HEMT Hochschulschrift |
| work_keys_str_mv | AT schimpfklaus herstellungundcharakterisierungvonsubmymingaasinphighelectronmobilitytransistoren |