Gallium nitride and related materials II: symposium held April 1 - 4, 1997, San Francisco, California, U.S.A.
Saved in:
| Other Authors: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Pittsburgh, Pa.
MRS
1997
|
| Series: | Materials Research Society: Materials Research Society symposia proceedings
468 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XV, 506 S. zahlr. Ill. und graph. Darst |
| ISBN: | 155899372X |
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MARC
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| 245 | 1 | 0 | |a Gallium nitride and related materials II |b symposium held April 1 - 4, 1997, San Francisco, California, U.S.A. |c ed.: C. R. Albernathy ... |
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| 650 | 4 | |a Electroluminescent devices |x Materials |v Congresses | |
| 650 | 4 | |a Epitaxy |v Congresses | |
| 650 | 4 | |a Gallium nitride |v Congresses | |
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Record in the Search Index
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 468 GALLIUM
NITRIDE AND RELATED MATERIALS II SYMPOSIUM HELD APRIL 1-4,1997, SAN
FRANCISCO, CALIFORNIA, U.S.A. EDITORS: CK. ABERNATHY UNIVERSITY OF
FLORIDA GAINESVILLE, FLORIDA, U.S.A. H. AMANO MEIJO UNIVERSITY NAGOYA,
JAPAN J.C. ZOLPER SANDIA NATIONAL LABORATORIES ALBUQUERQUE, NEW MEXICO,
U.S.A. [*** MATERIALS RESEARCH SOCIETY PITTSBURGH, PENNSYLVANIA CONTENTS
PREFACE XIII ACKNOWLEDGMENTS XV MATERIALS RESEARCH SOCIETY SYMPOSIUM
PROCEEDINGS XVI PARTI: GROWTH AND DOPING IMPURITY CONTAMINATION OF GAN
EPITAXIAL FILMS FROM THE SAPPHIRE, SIC, AND ZNO SUBSTRATES 3 QALLNA
FOPOVLCI, WOOK KIM, ANDREI BOTCHKAREV, HAIPENG TANG, JAMES SOLOMON, AND
HADIS MORKOC RELIABLE, REPRODUCIBLE, AND EFFICIENT MOCVD OF ILL-NITRIDES
IN PRODUCTION SCALE REACTORS 7 B. WACHTENDORF, R. BECCARD, D. SCHMITZ,
H. JUERGENSEN, *. SCHOEN, M. HEUKEN, AND E. WOELK *GROWTH AND
CHARACTERIZATION OF IN-BASED NITRIDE COMPOUNDS AND THEIR DOUBLE
HETEROSTRUCTURES 13 V.A. JOSHKIN, J.C. ROBERTS, E.L. FINER, M.K.
BEHBEHANI, F.O. MCINTOSH, L. WANG, S. LIN, I. SHMAGIN, S. KRISHNANKUTTY,
R.M. KOLBAS, *.*. EL-MASRY, AND S.M. BEDAIR MOVPE GROWTH AND
CHARACTERIZATION OF AL X GAI- X N LAYERS ON SAPPHIRE 23 S. CLUR, O.
BRIOT, J.L. ROUVIERE, A. ANDENET, Y-M. LE VAILLANT, B. QU, R.L.
AULOMBARD, J.F. DEMANGEOT, J. FRANDON, AND M. RENUCCI GROWTH OF TERNARY
SILICON CARBON NITRIDE AS A NEW WIDE BANDGAP MATERIAL 31 L.C. CHEN, CK.
CHEN, D.M. BHUSARI, K.M. CHEN, S.L. WEI, Y.F. CHEN, Y.C. JONG, D.Y. LIN,
C.F. LI, AND Y.S. HUANG NEW PRECURSOR ROUTES TO NANOCRYSTALLINE
CUBIC/HEXAGONAL GALLIUM NITRIDE, GAN 39 R.L. WELLS, J.F. JANIK, W.L.
QLADFEITER, J.L. COFFER, M.A. JOHNSON, AND B.D. STEFFEY TOWARD GROWING
LLL-V CLUSTERS WITH METALORGANIC PRECURSORS 45 A. DEMCHUK, J. PORTER,
AND B. KOPLITZ OPTIMIZATION OF LLL-N BASED DEVICES GROWN BY RF ATOMIC
NITROGEN PLASMA USING IN SITU CATHODOLUMINESCENCE 51 J.M. VAN HOVE, F.F.
CHOW, J.J. KLAASSEN, R. HICKMAN, II, A.M. WOWCHAK, D.R. CROSWELL, AND *
FOIIEY INVITED PAPER V LN X GA ( I- X )N ALLOYS AS ELECTRONIC MATERIALS
57 O.K. SEMCHINOVA, S.E. ALEXANDROV, H. RIEFF, AND D. UFFMANN SURFACE
PREPARATION AND GROWTH CONDITION DEPENDENCE OF CUBIC GAN LAYER ON (001)
GAAS BY HYDRIDE VAPOR- PHASE EPITAXY 63 TI. TSUCHIYA, K. SUNABA, S.
YONEMURA, T. SUEMASU, AND F. TIASEGAWA GROWTH OF GAN THIN FILMS ON
SAPPHIRE SUBSTRATE BY LOW- PRESSURE MOCVD 69 N. ISHIDA, T. HASHIMOTO, T.
TAKAYAMA, O. IMAFUJI, M. YURI, A. YOSHIKAWA, K. ITOH, Y. TERAKOSHI, T.
SUGINO, AND J. SHIRAFUJI MBE GROWTH OF STRAIN ENGINEERED GAN THIN FILMS
UTILIZING A SURFACTANT 75 R. KLOCKENBRINK, Y. KIM, M.S.TI. LEUNG, *
KISIELOWSKI, J. KRUEGER, G.S. SUDHIR, M. RUBIN, AND E.R. WEBER
QUASI-THERMODYNAMIC ANALYSIS OF METALORGANIC VAPOR- PHASE EPITAXY OF GAN
81 SHUKUN DUAN AND DACHENG LU ALUMINUM NITRIDE THIN FILMS GROWN BY
PLASMA-ASSISTED PULSED LASER DEPOSITION ON SI SUBSTRATES 87 M. OKAMOTO,
T. OGAWA, Y. MORI, AND T. SASAKI PYROLYTIC PREPARATION OF GALLIUM
NITRIDE FROM [GA(NET 2 3]2 AND ITS AMMONOLYSIS COMPOUND 93 SEIICHI
KOYAMA, YOSHIYUKI SUGAHARA, AND KAZUYUKI KURODA PULSED LASER DEPOSITION
OF GALLIUM NITRIDE ON SAPPHIRE 99 V. TALYANSKY, R.D. VISPUTE, R.P.
SHARMA, S. CHOOPUN, M.J. DOWNES, T. VENKATESAN, Y.X. LI, L.O.
SAIAMANCA-RIBA, M.C. WOOD, R.T. LAREAU, ANDK.A. JONES CONTROL OF VALENCE
STATES BY A CODOPING METHOD IN P-TYPE GAN MATERIALS 105 T. YAMAMOTO AND
H. KATAYAMA-YOSHIDA STRUCTURE, ELECTRONIC PROPERTIES, DEFECTS, AND
DOPING OF AIN USING A SELF-CONSISTENT MOLECULAR-DYNAMICS METHOD ILL
PETRA STUMM AND D.A. DRABOLD SPECTROSCOPIC IDENTIFICATION OF THE
ACCEPTOR-HYDROGEN COMPLEX IN MG-DOPED GAN GROWN BY MOCVD 117 W. GOETZ,
M.D. MCCIUSKEY, *.*. JOHNSON, D.P. SOUR, AND E.E. NAILER INCORPORATION
AND OPTICAL ACTIVATION OF ER IN GROUP LLL-N MATERIALS GROWN BY
METALORGANIC MOLECULAR-BEAM EPITAXY 123 J.D. MACKENZIE, CR. ABERNATHY,
S.J. PEARTON, S.M. DONOVAN, U. HOEMMERICH, M. THAIK, X. WU, F. REN, R.Q,
WILSON, AND J.M. ZAVADA VI SITE-SELECTIVE PHOTOLUMINESCENCE EXCITATION
AND PHOTOLUMINESCENCE SPECTROSCOPY OF ER-LMPLANTED WURTZITE GAN 131 S.
KIM, S.J. RHEE, D.A. TURNBULL, X. LI, J.J. COLEMAN, AND S.D. BISHOP
GALLIUM NITRIDE DOPED WITH ZINC AND OXYGEN - THE CRYSTAL FOR THE BLUE
POLARIZED LIGHT-EMITTING DIODES 137 V.O. SIDOROV, *.*. DREZHUK M.V.
ZAITSEV, AND D.V. SIDOROV PARTIM SUBSTRATES AND SUBSTRATE EFFECTS GAN
CRYSTALS GROWN FROM A LIQUID PHASE AT REDUCED PRESSURE 143 V.A.
IVANTSOV, V.A. SUKHOVEEV, AND V.A. DMITRIEV GROWTH OF BULK,
POLYCRYSTALLINE GALLIUM AND INDIUM NITRIDE AT SUBATMOSPHERIC PRESSURES
149 JOHN * ANGUS, ALBERTO ARGOITIA, CLIFF C. LIAYMAN. LONG WANG, JEFFREY
S. DYCK, AND KATHLEEN KASH POLAR-TWINNED DEFECTS IN LIGA0 2 SUBSTRATES
LATTICE MATCHED WITH GAN 155 TAKAO ISHII, YASUO TAZOH, AND SHINTARO
MIYAZAWA SUBSTRATE EFFECTS ON THE GROWTH OF INN 161 S.M. DONOVAN, J.D.
MACKENZIE, CR. ABERNATHY, S.J. PEARTON, P.H. HOLLOWAY, F. REN, J.M.
ZAVADA, AND B. CHAI MICROSTRUCTURES OF GAN FILMS GROWN ON A LIGA0 2 NEW
SUBSTRATE BY METALORGANIC CHEMICAL VAPOR DEPOSITION 167 JING-HONG LI,
OLGA M. KRYLIOUK, PAUL H. HOLLOWAY, TIMOTHY J. ANDERSON, AND KEVIN S.
JONES DEPENDENCE OF THE RESIDUAL STRAIN IN GAN ON THE AIN BUFFER LAYER
ANNEALING PARAMETERS 173 Y-M. LE VAILLANT, S. CLUR, A. ANDENET, O.
BRIOT, B. OIL, R.L. AULOMBARD, R. BISARO, J. OLIVIER, O. DURAND, AND
J-Y. DUBOZ EXCITONS BOUND TO STACKING FAULTS IN WURTZITE GAN 179 Y.T.
REBANE, Y.Q. SHRETER, AND M. ALBRECHT CHARACTERIZATION OF THE
SUBSTRATE/FILM INTERFACE IN GAN FILMS BY IMAGE DEPTH PROFILING SECONDARY
ION MASS SPECTROMETRY (SIMS) 183 SALMAN MITHA, ROBERT CLARK-PHELPS, JON
W. ERICKSON, Y. QAO, WOOK KIM, AND TIADIS MORKOC INITIAL STAGES OF MOCVD
GROWTH OF GALLIUM NITRIDE USING A MULTISTEP GROWTH APPROACH 187 J.T.
KOBAYASHI, *.*. KOBAYASHI, P.D. DAPKUS, X. ZHANG, AND D.H. RICH VII
PLASMA CLEANING AND NITRIDATION OF SAPPHIRE SUBSTRATES FOR ALXGAI-XN
EPITAXY AS STUDIED BY ARXPS AND XPD 193 M. SEELMANN-EGGEBERT, H.
ZIMMERMANN, H. OBION, R. HIEBUHR, AND B. WACHTENDORF PART III:
CHARACTERIZATION MECHANICAL PROPERTIES OF GALLIUM NITRIDE AND RELATED
MATERIALS 201 M.D. DRORY MOSAIC STRUCTURE AND CATHODOLUMINESCENCE OF GAN
EPILAYER GROWN BY LP-MOVPE 207 SHUKUN DUAN, XUEGONG TENG, YENRAN LI,
YUTIAN WANG, PEIDE HAN, AND DACHENG LU RESONANT RAMAN SCATTERING IN
GAN/AI 0 .ISGA 0 .85N AND LN Y GAI.YN/GAN/AL X GAI- X N HETEROSTRUCFURES
213 D. BEHR, R. NIEBUHR, H. OBLOH, J. WAGNER, K.H. BACHERN, AND U.
KAUFMANN RAMAN SCATTERING AND PHOTOLUMINESCENCE OF MG-DOPED GAN FILMS
GROWN BY MOLECULAR-BEAM EPITAXY 219 G. POPOVICI, Q.Y. XU, A. BOTCHKAREV,
W. KIM, FT. TANG, A. SALVADOR, R. STRANGE, J.O. WHITE, AND H. MORKOC
HIGH-PRESSURE RAMAN SCATTERING OF BIAXIALLY STRAINED GAN ON GAAS 225 H.
SIEGLE, A.R. QONI, C. THOMSEN, * ULRICH, *. SYASSEN, *. SCHOETTKER, D.J.
AS, AND D. SCHIKORA ELECTRON-PHONON SCATTERING IN VERY HIGH ELECTRIC
FIELDS 231 B.K. RIDLEY OPTICAL-GAIN MEASUREMENTS ON GAN AND AL X GAI_ X
N HETEROSTRUCFURES 237 L. ECKEY, J. HOIST, V. KUTZER, A. HOFFMANN, I.
BROSER, O. AMBACHER, M. STUTZMANN, H. AMANO, AND I. AKASAKI OPTICAL
ANISOTROPY OF THE OPTICAL RESPONSE FOR STRAINED GAN EPILAYERS GROWN
ALONG THE 10-10 DIRECTION 243 A. ANDENET, B. OIL, Y-M. HE VAILLANT, S.
CLUR, O. BRIOT, AND R.L. AULOMBARD ELECTRONIC AND OPTICAL PROPERTIES OF
BULK GAN AND GAN/AIGAN QUANTUM-WELL STRUCTURES 251 M. SUZUKI AND T.
UENOYAMA X-RAY PHOFOELECTRON DIFFRACTION MEASUREMENTS OF HEXAGONAL
GAN(OOOL) THIN FILMS 263 R. DENECKE, J. MORAIS, * WETZEL, J. LIESEGANG,
E.E. HALLER, AND CS. FADLEY VIII A CHEMICAL AND STRUCTURAL STUDY OF THE
AIN-SI INTERFACE 269 R. BEYE AND T. QEORGE MEASUREMENT OF LN X GAI_ X N
AND AL X GAI. X N COMPOSITIONS BY RBS AND SIMS 275 Y. OAO, J. KIRCHHOFF,
S. MITHA, J. W. ERICKSON, * HUANG, AND R. CLARK-PHELPS COMPLETE
CHARACTERIZATION OF AL X GAI. X N/LN X GAI.XN/GAN DEVICES BY SIMS 281 C.
HUANG, S. MITHA, J. W. ERICKSON, R. CLARK-PHELPS, JACK SHENG, AND Y. OAO
TEM/HREM ANALYSIS OF DEFECTS IN GAN EPITAXIAL LAYERS GROWN BY MOVPE ON
SIC AND SAPPHIRE 287 S. RUVIMOV, Z. LLLTENTAL-WEBER, C. DIEKER, J.
WASHBURN, M. KOIKE, H. AMANO, AND I. AKASAKI LUMINESCENCE RELATED TO
STACKING FAULTS IN HETEROEPITAXIALLY GROWN WURTZITE GAN 293 M. ALBRECHT,
S. CHRISTIANSEN, O. SALVIATI, C. ZANOTTI-FREGONARA, Y.T. REBANE, Y.Q.
SHRETER, M. MAYER, A. PELZMANN, M. KAMP, K.J. EBELING, M.D. BREMSER,
R.F. DAVIS, AND H.P. STRUNK PHOTOLUMINESCENCE OF STRAIN-ENGINEERED
MBE-GROWN GAN AND INGAN QUANTUM-WELL STRUCTURES 299 JOACHIM KRUEGER,
CHRISTIAN KISIELOWSKI, RALF KLOCKENBNNK, O.S. SUDHIR, YIHWAN KIM,
MICHAEL RUBIN, AND EICKE R. WEBER CHARACTERIZATION OF AL X GAI- X N
FILMS PREPARED BY PLASMA- INDUCED MOLECULAR-BEAM EPITAXY ON C-PLANE
SAPPHIRE 305 H. ANGERER, O. AMBACHER, M. STUTZMANN, *. METZGER, R.
HOEPLER, E. BORN, A. BERGMALER, AND O. DOLLINGER INFLUENCE OF FREE CHARGE
ON THE LATTICE PARAMETERS OF GAN AND OTHER SEMICONDUCTORS 311 M.
LESZCZYHSKT, J. BAK-MLSIUK, J. DOMAGALA, AND T. SUSKI HREM AND CBED
STUDIES OF POLARITY OF NITRIDE LAYERS WITH PRISMATIC DEFECTS GROWN OVER
SIC 317 P. VERMAUT, P. RUTERANA, G. RIOUET, A. SALVADOR, AND H. MORKOC
THE ATOMIC STRUCTURE OF THE {10T0} INVERSION DOMAINS IN GAN/SAPPHIRE
LAYERS 323 V. POTIN, P. RUTERANA, O. RIOUET, A. SALVADOR, AND FL. MORKOC
PART IV: PROCESSING *PROCESSING CHALLENGES FOR GAN-BASED PHOTONIC AND
ELECTRONIC DEVICES 331 S.J. PEARTON, F. REN, R.J. SHUT, J.C. ZOLPER, AND
A. KATZ *LNVITED PAPER IX PHOTOELECTROCHEMICAL ETCHING OF GAN 349 C.
YOUTSEY, O. BULMAN, AND I. ADESIDA PATTERNING OF GAN IN HIGH-DENSITY CL
2 - AND BCI 3 -BASED PLASMAS 355 R.J. SHUL, R.D. BRIGGS, J. HAN, S.J.
PEARTON, J. W. LEE, C.B. VARTULI, K.P. KIILEEN, AND M.J. LUDOWISE ETCH
CHARACTERISTICS OF GAN USING INDUCTIVELY-COUPLED CI 2 /HBR AND CL 2 /AR
PLASMAS 367 H.S. KIM, Y.J. LEE, Y.H. LEE, J.W. LEE, M.C. YOO, T.I. KIM,
ANDO.Y. YEOM DRY ETCHING OF GAN USING REACTIVE ION-BEAM ETCHING AND
CHEMICALLY ASSISTED REACTIVE ION-BEAM ETCHING 373 JAE-WON LEE, HYONG-SOO
PARK, YONG-JO PARK, MYONG-CHEOL YOO, TAE-IL KIM, HYEON-SOO KIM, AND
QEUN-YONG YEOM DEVELOPMENT OF GAN AND INGAN GRATINGS BY DRY ETCHING 379
J.W. LEE, J. HONG, J.D. MACKENZIE, CR. ABERNATHY, S.J. PEARTON, F. REN,
AND P.F. SCIORTINO, JR. PLASMA DAMAGE EFFECTS IN INAIN FIELD-EFFECT
TRANSISTORS 385 F. REN, J.R. LOTHIAN, Y.K. CHEN, J.D. MACKENZIE, S.M.
DONOVAN, C.R. ABERNATHY, C.B. VARTULI, J.W. LEE, S.J. PEARTON, AND R.Q.
WILSON ICP DRY ETCHING OF LLL-V NITRIDES 393 C.B. VARTULI, J.W. LEE,
J.D. MACKENZIE, S.M. DONOVAN, C.R. ABERNATHY, S.J. PEARTON, R.J. SHUL, *
CONSTANTINE, * BARRATT, A. KATZ, A. Y. POYAKOV, M. SHIN, AND M.
SKOWRONSKI IMPLANTATION ACTIVATION ANNEALING OF SI-IMPLANTED GALLIUM
NITRIDE AT TEMPERATURES 1 ** * 401 J.C. ZOLPER, J. HAN, R.M. BIEFELD,
S.B. VAN DEUSEN, W.R. WAMPLER, S.J. PEARTON, J.S. WILLIAMS, H.H. TAN,
R.J. KARLICEK, JR., AND R.A. STALL RECOVERY OF STRUCTURAL DEFECTS IN GAN
AFTER HEAVY ION IMPLANTATION 407 C. RONNING, M. DALMER, M. DEICHER, M.
RESTLE, M.D. BREMSER, R.F. DAVIS, AND H. HOFSAESS CURRENT TRANSPORT IN W
AND WSI X OHMIC CONTACTS TO INGAN AND INN 413 C.B. VARTULI, S.J.
PEARTON, C.R. ABERNATHY, J.D. MACKENZIE, M.L. LOVEJOY, R.J. SHUL, J.C.
ZOLPER, A.Q. BACA, M. HAGEROTT-CRAWFORD, K.A. JONES, AND F. REN
TEMPERATURE BEHAVIOR OF PT/AU OHMIC CONTACTS TO P-GAN 421 D.J, KING, L.
ZHANG, J.C. RAMER, S.D. HERSEE, AND L.F. LESTER LOW RESISTANCE CONTACTS
TO P-TYPE GAN 427 TAEK KIM, JINSEOK KHIM, SUHEE CHAE, AND TAE-IL KIM
INVITED PAPER PHASE FORMATION AND MORPHOLOGY IN NICKEL AND NICKEL/GOLD
CONTACTS TO GALLIUM NITRIDE 431 H.S. VENUGOPALAN, S.E. MOHNEY, B.P.
LUTHER, J.M. DELUCCA, S.D. WOLTER, J.M. REDWING, AND O.E. BULMAN
ELECTRON FIELD EMISSION FROM ALUMINUM NITRIDE 437 D.P. MALTA, G.G.
FOUNTAIN, J.B. POSTHILL, T.P. HUMPHREYS, C. PETTENKOFER, AND R.J.
MARKUNAS PARTV: DEVICE PERFORMANCE AND DESIGN *VALENCE BAND PHYSICS IN
WURTZITE GAN 445 T. AZUHATA, T. SOTA, S. CHICHIBU, A. KURAMATA, K.
TIORINO, M. YAMAGUCHI, T. YAGI, AND S. ******** COMPARISON OF ELECTRON
AND HOLE INITIATED IMPACT IONIZATION IN ZINC BLENDE AND WURTZITE PHASE
GALLIUM NITRIDE 457 E. BELLOTTI, I.TI. OGUZMAN, J. KOLNIK, K.F. BRENNAN,
R. WANG AND P.P. RUDEN MOLECULAR-DYNAMICS SIMULATION OF TRANSPORT IN
DIAMOND AND GAN: ROLE OF COLLECTIVE EXCITATIONS 463 *1.*. MISKOVSKY,
P.B. LERNER, AND P.H. CUTLER ELECTRICAL AND OPTICAL PROPERTIES OF
INGAN/AIGAN DOUBLE HETEROSTRUCTURE BLUE LIGHT-EMITTING DIODES 469 K.
YANG, TI.T. SHI, B. SHEN, R. ZHANG, Z.Z. CHEN, P. CHEN, AND Y.D. ZHENG
EFFECT OF HYDROGEN CHLORIDE ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS
OF MOCVD-GROWN AIN/6H-SIC MIS STRUCTURES 475 C.C. TIN, A. GICHUHI, M.J.
BOZACK, CO. SHANNON, AND CK. TEH MOCVD GROWTH OF HIGH OUTPUT POWER INGAN
MULTIPLE- QUANTUM-WELL LIGHT-EMITTING DIODE 481 P. KOZODOY, A. ABARE,
R.K. SINK, M. MACK, S. KELLER, S.P. DENBAARS, U.K. MISHRA, AND D.
STEIGERWALD THEORY OF GAIN IN GROUP-ILL NITRIDE LASERS 487 W. W. CHOW,
A.F. WRIGHT, A. GIRNDT, F. JAHNKE, AND S. W. KOCH GROWTH AND
CHARACTERIZATION OF THERMAL OXIDES ON GALLIUM NITRIDE 495 SCOTT D.
WOLTER, SUZANNE E. MOHNEY, TLARI VENUGOPALAN, DEBRA L. WALTEMYER, AND
BRIAN P. LUTHER AUTHOR INDEX 501 SUBJECT INDEX 505 *LNVITED PAPER XI
|
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| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1997 San Francisco Calif. gnd-content |
| genre_facet | Konferenzschrift 1997 San Francisco Calif. |
| id | DE-604.BV011692820 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:14:09Z |
| institution | BVB |
| isbn | 155899372X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007884576 |
| oclc_num | 37024119 |
| open_access_boolean | |
| owner | DE-29T DE-703 DE-83 |
| owner_facet | DE-29T DE-703 DE-83 |
| physical | XV, 506 S. zahlr. Ill. und graph. Darst |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | MRS |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Gallium nitride and related materials II symposium held April 1 - 4, 1997, San Francisco, California, U.S.A. ed.: C. R. Albernathy ... Pittsburgh, Pa. MRS 1997 XV, 506 S. zahlr. Ill. und graph. Darst txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 468 Electroluminescent devices Materials Congresses Epitaxy Congresses Gallium nitride Congresses Laser materials Congresses Semiconductors Materials Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1997 San Francisco Calif. gnd-content Galliumnitrid (DE-588)4375592-6 s Halbleiter (DE-588)4022993-2 s DE-604 Abernathy, Cammy R. edt Materials Research Society: Materials Research Society symposia proceedings 468 (DE-604)BV001899105 468 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007884576&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Gallium nitride and related materials II symposium held April 1 - 4, 1997, San Francisco, California, U.S.A. Materials Research Society: Materials Research Society symposia proceedings Electroluminescent devices Materials Congresses Epitaxy Congresses Gallium nitride Congresses Laser materials Congresses Semiconductors Materials Congresses Halbleiter (DE-588)4022993-2 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4375592-6 (DE-588)1071861417 |
| title | Gallium nitride and related materials II symposium held April 1 - 4, 1997, San Francisco, California, U.S.A. |
| title_auth | Gallium nitride and related materials II symposium held April 1 - 4, 1997, San Francisco, California, U.S.A. |
| title_exact_search | Gallium nitride and related materials II symposium held April 1 - 4, 1997, San Francisco, California, U.S.A. |
| title_full | Gallium nitride and related materials II symposium held April 1 - 4, 1997, San Francisco, California, U.S.A. ed.: C. R. Albernathy ... |
| title_fullStr | Gallium nitride and related materials II symposium held April 1 - 4, 1997, San Francisco, California, U.S.A. ed.: C. R. Albernathy ... |
| title_full_unstemmed | Gallium nitride and related materials II symposium held April 1 - 4, 1997, San Francisco, California, U.S.A. ed.: C. R. Albernathy ... |
| title_short | Gallium nitride and related materials II |
| title_sort | gallium nitride and related materials ii symposium held april 1 4 1997 san francisco california u s a |
| title_sub | symposium held April 1 - 4, 1997, San Francisco, California, U.S.A. |
| topic | Electroluminescent devices Materials Congresses Epitaxy Congresses Gallium nitride Congresses Laser materials Congresses Semiconductors Materials Congresses Halbleiter (DE-588)4022993-2 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | Electroluminescent devices Materials Congresses Epitaxy Congresses Gallium nitride Congresses Laser materials Congresses Semiconductors Materials Congresses Halbleiter Galliumnitrid Konferenzschrift 1997 San Francisco Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007884576&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT abernathycammyr galliumnitrideandrelatedmaterialsiisymposiumheldapril141997sanfranciscocaliforniausa |