Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Mikrofilm Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
1996
|
| Ausgabe: | [Mikrofiche-Ausg.] |
| Schlagworte: | |
| Beschreibung: | Zürich, ETH, Diss., 1996. - Mikrofiche-Ausg.: 3 Mikrofiches : 24x |
| Beschreibung: | 271 S.: graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV011544741 | ||
| 003 | DE-604 | ||
| 005 | 19980727 | ||
| 007 | he|uuuuuuuuuu | ||
| 008 | 970923s1996 bm||| 00||| undod | ||
| 035 | |a (OCoLC)634272996 | ||
| 035 | |a (DE-599)BVBBV011544741 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | |a und | ||
| 049 | |a DE-91 |a DE-29T | ||
| 084 | |a ELT 334d |2 stub | ||
| 100 | 1 | |a Blaser, Markus |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication |c presented by Markus Blaser |
| 246 | 1 | 3 | |a Monolithically integrated InGaAs-InP photodiode-junction field-effect transistor receivers for fiber-optic telecommunication |
| 250 | |a [Mikrofiche-Ausg.] | ||
| 264 | 1 | |c 1996 | |
| 300 | |a 271 S.: graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b h |2 rdamedia | ||
| 338 | |b he |2 rdacarrier | ||
| 500 | |a Zürich, ETH, Diss., 1996. - Mikrofiche-Ausg.: 3 Mikrofiches : 24x | ||
| 650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a PIN-Diode |0 (DE-588)4174704-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Sperrschicht-FET |0 (DE-588)4213138-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Photodetektor |0 (DE-588)4136941-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Indiumphosphid |0 (DE-588)4161535-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Vertikalposition |0 (DE-588)4368641-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Indiumarsenid |0 (DE-588)4249718-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Integrierte Optoelektronik |0 (DE-588)4223876-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Photodiode |0 (DE-588)4136942-7 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Photodetektor |0 (DE-588)4136941-5 |D s |
| 689 | 0 | 1 | |a Integrierte Optoelektronik |0 (DE-588)4223876-6 |D s |
| 689 | 0 | 2 | |a PIN-Diode |0 (DE-588)4174704-5 |D s |
| 689 | 0 | 3 | |a Photodiode |0 (DE-588)4136942-7 |D s |
| 689 | 0 | 4 | |a Sperrschicht-FET |0 (DE-588)4213138-8 |D s |
| 689 | 0 | 5 | |a Vertikalposition |0 (DE-588)4368641-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Integrierte Optoelektronik |0 (DE-588)4223876-6 |D s |
| 689 | 1 | 1 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
| 689 | 1 | 2 | |a Indiumarsenid |0 (DE-588)4249718-8 |D s |
| 689 | 1 | 3 | |a Galliumarsenid |0 (DE-588)4019155-2 |D s |
| 689 | 1 | 4 | |a Indiumphosphid |0 (DE-588)4161535-9 |D s |
| 689 | 1 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-007772143 | ||
Datensatz im Suchindex
| _version_ | 1804126068403077120 |
|---|---|
| any_adam_object | |
| author | Blaser, Markus |
| author_facet | Blaser, Markus |
| author_role | aut |
| author_sort | Blaser, Markus |
| author_variant | m b mb |
| building | Verbundindex |
| bvnumber | BV011544741 |
| classification_tum | ELT 334d |
| ctrlnum | (OCoLC)634272996 (DE-599)BVBBV011544741 |
| discipline | Elektrotechnik |
| edition | [Mikrofiche-Ausg.] |
| format | Microfilm Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02424nam a2200577 c 4500</leader><controlfield tag="001">BV011544741</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19980727 </controlfield><controlfield tag="007">he|uuuuuuuuuu</controlfield><controlfield tag="008">970923s1996 bm||| 00||| undod</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)634272996</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV011544741</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">und</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-29T</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 334d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Blaser, Markus</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication</subfield><subfield code="c">presented by Markus Blaser</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Monolithically integrated InGaAs-InP photodiode-junction field-effect transistor receivers for fiber-optic telecommunication</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">[Mikrofiche-Ausg.]</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">271 S.: graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">h</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">he</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Zürich, ETH, Diss., 1996. - Mikrofiche-Ausg.: 3 Mikrofiches : 24x</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">PIN-Diode</subfield><subfield code="0">(DE-588)4174704-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Sperrschicht-FET</subfield><subfield code="0">(DE-588)4213138-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Photodetektor</subfield><subfield code="0">(DE-588)4136941-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Indiumphosphid</subfield><subfield code="0">(DE-588)4161535-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Vertikalposition</subfield><subfield code="0">(DE-588)4368641-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Indiumarsenid</subfield><subfield code="0">(DE-588)4249718-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Integrierte Optoelektronik</subfield><subfield code="0">(DE-588)4223876-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Photodiode</subfield><subfield code="0">(DE-588)4136942-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Photodetektor</subfield><subfield code="0">(DE-588)4136941-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Integrierte Optoelektronik</subfield><subfield code="0">(DE-588)4223876-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">PIN-Diode</subfield><subfield code="0">(DE-588)4174704-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Photodiode</subfield><subfield code="0">(DE-588)4136942-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Sperrschicht-FET</subfield><subfield code="0">(DE-588)4213138-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="5"><subfield code="a">Vertikalposition</subfield><subfield code="0">(DE-588)4368641-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Integrierte Optoelektronik</subfield><subfield code="0">(DE-588)4223876-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">Indiumarsenid</subfield><subfield code="0">(DE-588)4249718-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="3"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="4"><subfield code="a">Indiumphosphid</subfield><subfield code="0">(DE-588)4161535-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-007772143</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV011544741 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T18:11:34Z |
| institution | BVB |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007772143 |
| oclc_num | 634272996 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T |
| owner_facet | DE-91 DE-BY-TUM DE-29T |
| physical | 271 S.: graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| record_format | marc |
| spelling | Blaser, Markus Verfasser aut Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication presented by Markus Blaser Monolithically integrated InGaAs-InP photodiode-junction field-effect transistor receivers for fiber-optic telecommunication [Mikrofiche-Ausg.] 1996 271 S.: graph. Darst. txt rdacontent h rdamedia he rdacarrier Zürich, ETH, Diss., 1996. - Mikrofiche-Ausg.: 3 Mikrofiches : 24x Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf PIN-Diode (DE-588)4174704-5 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Sperrschicht-FET (DE-588)4213138-8 gnd rswk-swf Photodetektor (DE-588)4136941-5 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf Vertikalposition (DE-588)4368641-2 gnd rswk-swf Indiumarsenid (DE-588)4249718-8 gnd rswk-swf Integrierte Optoelektronik (DE-588)4223876-6 gnd rswk-swf Photodiode (DE-588)4136942-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Photodetektor (DE-588)4136941-5 s Integrierte Optoelektronik (DE-588)4223876-6 s PIN-Diode (DE-588)4174704-5 s Photodiode (DE-588)4136942-7 s Sperrschicht-FET (DE-588)4213138-8 s Vertikalposition (DE-588)4368641-2 s DE-604 Drei-Fünf-Halbleiter (DE-588)4150649-2 s Indiumarsenid (DE-588)4249718-8 s Galliumarsenid (DE-588)4019155-2 s Indiumphosphid (DE-588)4161535-9 s |
| spellingShingle | Blaser, Markus Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd PIN-Diode (DE-588)4174704-5 gnd Galliumarsenid (DE-588)4019155-2 gnd Sperrschicht-FET (DE-588)4213138-8 gnd Photodetektor (DE-588)4136941-5 gnd Indiumphosphid (DE-588)4161535-9 gnd Vertikalposition (DE-588)4368641-2 gnd Indiumarsenid (DE-588)4249718-8 gnd Integrierte Optoelektronik (DE-588)4223876-6 gnd Photodiode (DE-588)4136942-7 gnd |
| subject_GND | (DE-588)4150649-2 (DE-588)4174704-5 (DE-588)4019155-2 (DE-588)4213138-8 (DE-588)4136941-5 (DE-588)4161535-9 (DE-588)4368641-2 (DE-588)4249718-8 (DE-588)4223876-6 (DE-588)4136942-7 (DE-588)4113937-9 |
| title | Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication |
| title_alt | Monolithically integrated InGaAs-InP photodiode-junction field-effect transistor receivers for fiber-optic telecommunication |
| title_auth | Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication |
| title_exact_search | Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication |
| title_full | Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication presented by Markus Blaser |
| title_fullStr | Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication presented by Markus Blaser |
| title_full_unstemmed | Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication presented by Markus Blaser |
| title_short | Monolithically integrated InGaAs-InP photodiode junction field effect transistor receivers for fiber optic telecommunication |
| title_sort | monolithically integrated ingaas inp photodiode junction field effect transistor receivers for fiber optic telecommunication |
| topic | Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd PIN-Diode (DE-588)4174704-5 gnd Galliumarsenid (DE-588)4019155-2 gnd Sperrschicht-FET (DE-588)4213138-8 gnd Photodetektor (DE-588)4136941-5 gnd Indiumphosphid (DE-588)4161535-9 gnd Vertikalposition (DE-588)4368641-2 gnd Indiumarsenid (DE-588)4249718-8 gnd Integrierte Optoelektronik (DE-588)4223876-6 gnd Photodiode (DE-588)4136942-7 gnd |
| topic_facet | Drei-Fünf-Halbleiter PIN-Diode Galliumarsenid Sperrschicht-FET Photodetektor Indiumphosphid Vertikalposition Indiumarsenid Integrierte Optoelektronik Photodiode Hochschulschrift |
| work_keys_str_mv | AT blasermarkus monolithicallyintegratedingaasinpphotodiodejunctionfieldeffecttransistorreceiversforfiberoptictelecommunication |