Materials modification and synthesis by ion beam processing: symposium held December 2 - 5, 1996, Boston, Massachusetts, USA
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Pittsburgh, PA
Materials Research Soc.
1997
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| Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
438 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIX, 727 S. Ill., graph. Darst. |
| ISBN: | 1558993428 |
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| 245 | 1 | 0 | |a Materials modification and synthesis by ion beam processing |b symposium held December 2 - 5, 1996, Boston, Massachusetts, USA |c ed.: Dale E. Alexander ... |
| 264 | 1 | |a Pittsburgh, PA |b Materials Research Soc. |c 1997 | |
| 300 | |a XIX, 727 S. |b Ill., graph. Darst. | ||
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| 490 | 1 | |a Materials Research Society: Materials Research Society symposia proceedings |v 438 | |
| 650 | 4 | |a Ion implantation |v Congresses | |
| 650 | 4 | |a Materials |x Effect of radiation on |v Congresses | |
| 650 | 4 | |a Semiconductor doping |v Congresses | |
| 650 | 4 | |a Silicon |x Effect of radiation on |v Congresses | |
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| adam_text | IMAGE 1
MATERIALS RESEARCH SOCIETY
SYMPOSIUM PROCEEDINGS VOLUME 4 38
MATERIALS MODIFICATION
AND SYNTHESIS BY ION BEAM PROCESSING SYMPOSIUM HELD DECEMBER 2-5,1996,
BOSTON, MASSACHUSETTS, U.S.A. EDITORS:
DALE E. ALEXANDER ARGONNE NATIONAL LABORATORY ARGONNE, ILLINOIS, U.S.A.
NATHAN W. CHEUNG UNIVERSITY OF CALIFORNIA, BERKELEY BERKELEY,
CALIFORNIA, U.S.A.
BYIMGWOO PARK GEORGIA INSTITUTE OF TECHNOLOGY ATLANTA, GEORGIA, U.S.A.
WOLFGANG SKORUPA RESEARCH CENTER ROSSENDORF, INC. DRESDEN, GERMANY
IMTRISI MATERIALS RESEARCH SOCIETY
P L T T S B U R G H, PENNSYLVANIA
IMAGE 2
CONTENTS
PREFACE XVII
ACKNOWLEDGMENTS XIX
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS XX
PARTI: ELECTRONIC MATERIALS
SECTION I: SILICON
TRANSIENT-ENHANCED DIFFUSION OF DOPANTS IN PREAMORPHIZED SI LAYERS 3
A. CLAVERIE, C. BONAFOS, M. OMRI, B. DE MAUDUIT, 0. BEN ASSAYAG, A.
HARTMEZ, D. ALQUIER, AND D. MATHIOT
TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON: THE INTERSTITIAL FLUX
15
T.W. SIMPSON, R.D. QOLDBERG, I.V. MITCHELL, AND J-M. BARIBEAU
EFFECT OF ENERGY AND DOSE ON TRANSIENT-ENHANCED DIFFUSION AND DEFECT
MICROSTRUCTURE IN LOW-ENERGY HIGH-DOSE AS + IMPLANTED SI 21
V. KRISHNAMOORTHY, D. VENABLES, K. MOELLER, U.S. JONES, AND B. FREER
MODELING OF DISLOCATION LOOP GROWTH AND TRANSIENT ENHANCED DIFFUSION IN
SILICON FOR AMORPHIZING IMPLANTS 27
ALP FI. QENCER AND SCOTT T. DUNHAM
AB INITIO PSEUDOPOTENTIAL CALCULATIONS OF CARBON IMPURITIES IN SI 33
JING ZHU, T. DIAZ DE LA RUBIA, AND CHRISTIAN MAIIHIOT
CHARGE STATE DEFECT ENGINEERING OF SILICON DURING ION IMPLANTATION 39
R.A. BROWN, J. RAVI, Y. EROKHIN, O.A. ROZGONYI, AND C. W. WHITE
MODELING OF EXTENDED DEFECTS IN SILICON 45
M.E. LAW, K.S. JONES, S.K EARLES, A.D. LILAK, ANDJ-W. XU
*LON-BEAM INJECTED POINT DEFECTS IN CRYSTALLINE SILICON: MIGRATION,
INTERACTION AND TRAPPING PHENOMENA 53
F. PRIOLO, V. PRIVITERA, S. COFFA, AND S. LIBERTINO
THE EFFECT OF IMPURITY CONTENT AND ION MASS ON THE DEPTH PROFILES OF
VACANCY-TYPE DEFECTS IN MEV-LMPLANTED SI 65
S. LIBERTINO, S. COFFA, V. PRIVITERA, AND F. PRIOLO
*LNVITED PAPER
V
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COMPETITION BETWEEN GETTERING BY IMPLANTATION-INDUCED
CAVITIES IN SILICON AND INTERNAL GETTERING ASSOCIATED WITH SI0 2
PRECIPITATION 71
S.A. MCTLUGO, E.R. WEBER, S.M. MYERS, AND O.A. PETERSEN
DIFFUSE X-RAY SCATTERING STUDY OF DEFECTS CREATED BY KEV ION IMPLANTS IN
SI 77
P.J. PARTYKA, R.S. AVERBACK, K. RIORDLUND, I.K. ROBINSON, D. WALKO, P.
EHRHART, T. DIAZ DE LA RUBIA, AND M. TANG
MODELING OF DAMAGE EVOLUTION DURING ION IMPLANTATION INTO SILICON: A
MONTE CARLO APPROACH 83
S. TIAN, M. MORRIS, S.J. MORRIS, B. OBRADOVIC, AND A.F. TASCH
DOSE RATE EFFECTS DURING DAMAGE ACCUMULATION IN SILICON 89
M-J. CATURIA AND T. DIAZ DE LA RUBIA EFFECTS OF INTERSTITIAL CLUSTERING
ON TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON 95
S. SOIMI AND S. VALMORRI
BORON TRANSIENT-ENHANCED DIFFUSION IN HEAVILY PHOSPHORUSDOPED SILICON
101
M.B. HUANG, U. MYIER, T.W. SIMPSON, P.J. SIMPSON, AND I.V. MITCHELL
ELECTRONIC STRUCTURE AND GATE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MBE
SILICON S-FETS 107
J.E. MANZOII AND O. HIPOEIITO
AN ELECTRONIC STOPPING POWER MODEL IN SINGLE-CRYSTAL SILICON FROM A FEW
KEV TO SEVERAL MEV 113
S.J. MORRIS, B. OBRADOVIC, S-TL. YANG, A.F. TASCH, AND L. RUBIN
KINETICS OF INTRINSIC AND DOPANT-ENHANCED SOLID-PHASE EPITAXY IN BURIED
AMORPHOUS SI LAYERS 119
J.C. MCCALLUM HEAT AND MASS TRANSPORT INDUCED BY COLLISION CASCADES 125
A. CARO, M. ALURRALDE, R. SALIBA, AND M. CARO
EFFECTS OF VACANCY-TYPE DEFECTS ON ELECTRICAI ACTIVATION OF P +
IMPLANTED INTO SILICON 131
M. WATANABE, T. KITANO, S. ASADA, A. UEDONO, T. MORIYA, T. KAWANO, S.
TANIGAWA, R. SUZUKI, T. OHDAIRA, AND T. MIKADO
ANNEALING PROPERTIES OF DEFECTS IN BF2 + IMPLANTED SI 137
T. KITANO, M. WATANABE, A. YAOITA, S. OGURO, A. UEDONO, T. MORIYA, S.
TANIGAWA, T. KAWANO, R. SUZUKI, T. OHDAIRA, AND T. MIKADO
RAMAN SPECTROSCOPY OF LON-LMPLANTED SILICON 143
DAVID D. TUSCHE! AND JAMES P. LAVINE
VI
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MASK-EDGE DISTRIBUTIONS PRODUCED BY 80 KEV AS +
ION IMPLANTATION INTO SI 149
D. DANAILOV, D. KARPUZOV, A. ALMAZOUZI, P. DE ALMEIDA, AND M. VICTORIA
SECONDARY DEFECT FORMATION AND GETTERING IN MEV SELF-IMPLANTED SILICON
155
R.A. BROWN, O. KONONCHUK, Z. RADZIMSKI, Q.A. ROZGONYI, AND F. GONZALEZ
X-RAY PHOTOELECTRON SPECTROSCOPY INVESTIGATION OF THE INTERACTION OF NF3
WITH SILICON 161
T.W. LITTLE AND F.S. OHUCHI
LON-BEAM MODIFICATION OF CLUSTER-COVERED SILICON SURFACES 167
O.V. QULKO AND M.T. ZINKE-AUMANG
PARTI: ELECTRONIC MATERIALS
SECTION II: COMPOUND SEMICONDUCTORS. WIDE BANDGAP MATERIALS. SILICIDES
*LON-BEAM-LNDUCED EPITAXIAL REGROWTH AND INTERFACIAI AMORPHIZATION OF
COMPOUND SEMICONDUCTORS 175
E. GLASER, T. FEHLHABER, R. SCHULZ, T. BACHMANN AND F. GAIDUK
CHARACTERIZATION OF LATERALLY SELECTED SI-DOPED LAYER FORMED IN GAAS
USING A LOW-ENERGY FIB-MBE COMBINED SYSTEM 187
TI. NAKAYAMA, J. YANAGISAWA, F. WAKAYA, Y. YUBA, S. TAKAOKA, K. MURASE,
AND K. QAMO
ELEVATED TEMPERATURE IMPLANTATION OF GAAS WITH SI IONS 193
R.A. BROWN AND J.S. WILLIAMS
AMORPHIZATION MECHANISMS IN AL X GAI. X AS 199
B.W. LAGOW, B.A. TURKOT, I.M. ROBERTSON, L.E. REHN, P.M. BALDO, S.D.
ROH, D.V. FORBES, ANDJ.J. COLEMAN
ELECTRON-BEAM ENHANCED PRECIPITATION IN HIGHLY CARBON-DOPED GAAS LAYERS
205
P. WERNER, U. GOESELE, AND TI. KOHDA
FABRICATION OF MULTILEVEL BURIED OXIDE LAYERS BY OXYGEN-ION-IMPLANTATION
INTO SI/GE MULTILAYERS 211
TOSHIO OGINO, YOSHIHIRO KOBAYASHI, KUNIYIL PRABHAKARAN, AND KQJI
SUMITOMO
THE FABRICATION OF HIGH-SPEED ELECTRONIC DEVICES BY LON-BEAM SYNTHESIS
OF GE X SI]. X STRAINED LAYERS 217
R.O. ELIIMAN, TI. JIANG, W.C. WONG, AND P. KRINGHOJ
INVITED PAPER
VII
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GERMANIUM REDISTRIBUTION PHENOMENA IN THE SYNTHESIS
OF SIGE LAYERS 223
C.J. PATEL AND J.B. BUTCHER
INTERACTION OF CAVITIES AND DISLOCATIONS IN SEMICONDUCTORS 229
D.M. FOLLSTAEDT, S.M. MYERS, S.R. LEE, J.L. RENO, R.L. DAWSON, AND J.
HAN
VACANCY-TYPE DEFECTS IN ELECTRON AND PROTON IRRADIATED LL-VI COMPOUNDS
235
S. BRUNNER, W. PUFF, P. MASCHER, AG. BALOGH, AND H. BAUMANN
*LON IMPLANTATION AND ANNEALING EFFECTS IN SILICON CARBIDE 241
V. TIEERA AND W. SKORUPA
EFFECTS OF ION BOMBARDMENT ON CHEMICAL INTERACTIONS AT SIC SURFACE AND
AL/SIC INTERFACES 253
HEATHER L. BECK, MOON-TL. LEE, AND FUMIO S. OHUCHI
GROWTH OF PATTERNED SIC BY ION MODIFICATION AND ANNEALING OF COEO FILMS
ON SILICON 259
L. MORO, A. PAUL, D.C. LORENTS, R. MALHOTRA, K.J. WU, AND S. SUBRAMONEY
FORMATION OF A BURIED SOFT LAYER IN SIC FOR COMPLIANT SUBSTRATE BY ION
IMPLANTATION 265
M. LIOUBTCHENKO, J. FLUNN, A. SUVKHANOV, N. PARIKH, AND D. BRAY
FORMATION OF BURIED LAYERS OF (SIC)I. X (AIN) X IN OEH-SIC USING LON-BEAM
SYNTHESIS 271
R.A. YANKOV, N. FLATZOPOULOS, W. FUKAREK, M. VOELSKOW, V. TIEERA, J.
PEZOLDT, AND W. SKORUPA
LON-BEAM SYNTHESIS OF SIC/SI HETEROSTRUCTURES BY MEVVA IMPLANTATION 277
S.P. WONG, L.C. HO, DIHU CHEN, W.S. QUO, FL. YAN, AND R. W.M. KWOK
CONDUCTIVE TUNGSTEN-BASED LAYERS SYNTHESIZED BY ION IMPLANTATION INTO
6H-SILICON CARBIDE 283
H. WEISHART, J. SCHOENEICH, M. VOELSKOW, AND W. SKORUPA
SIC PRECIPITATE FORMATION DURING HIGH-DOSE CARBON IMPLANTATION INTO
SILICON 289
J.K.N. LINDNER, K. VOLZ, AND B. STRITZKER
QUANTUM TRANSPORT IN LON-BEAM-SYNTHESIZED COBALT DISILICIDE WIRES 295
D. LENSSEN, S. MESTERS, AND S. MANU
*LNVITED PAPER
VIII
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EFFECT OF ARGON ION BOMBARDMENT ON THE STABILITY OF
NARROW COBALT SILICIDE/POLYSILICON STRUCTURE 301
JER-SHEN MAA AND CHIEN-HSIUNG PENG
FORMATION AND CHARACTERISTICS OF COSI 2 LAYERS SYNTHESIZED BY MEWA
IMPLANTATION 307
S.P. WONG, QICAI PENG, W.Y. CHEUNG, W.S. QUO, J.B. XU, I.H. WILSON, S.K.
MARK, R. MORTON, AND S.S. LAU
MICROSTRUCTURAL OBSERVATION OF FOCUSED LON-BEAM MODIFICATION OF NI
SILICIDE/SI THIN FILMS 313
MIYOKO TANAKA, KAZUO FURUYA, AND TETSUYA SAITO
PARTI: ELECTRONIC MATERIALS
SECTIONIII: PLASMA ION IMPLANTATION. LOW-ENERGY DEPOSITION TECHNIQUES
PLASMA ION IMPLANTATION FOR FIAT PANEL DISPLAYS 321
CHUNG CHAN, SHU QIN, YUANZHONG ZHOU, WEI LIU, SHUICHI WU, MANKUAN
MICHAEL VAI, LONEL BURSUC, JIQUN SHAO, AND STUART DENHOLM
*SYNTHESIS OF SOI MATERIALS USING PLASMA IMMERSION ION IMPLANTATION 333
PAUL K. CHU
PLASMA DOPING AND PLASMA-LESS DOPING OF SEMICONDUCTOR 345
BUNJI MIZUNO, MICHIHIKO TAKASE, ICHIRO RIAKAYAMA, AND MOTOTSUGU OGURA
N-TYPE DOPING BY PLASMA ION IMPLANTATION USING A PH 3 SDS SYSTEM 351
SHU QIN, YUANZHONG ZHOU, KEITH WARNER, CHUNG CHAN, JIQUN SHAO, AND
STUART DENHOLM
INVESTIGATIONS OF PLASMA IMMERSION ION IMPLANTATION HYDROGENATION FOR
POLY-SI TFTS USING AN INDUCTIVELY COUPLED PLASMA SOURCE 357
YUANZHONG ZHOU, SHU QIN, AND CHUNG CHAN
*RANGE AND DAMAGE DISTRIBUTION IN CLUSTER ION IMPLANTATION 363
/. YAMADA, J. MATSUO, E.C. JONES, D. TAKEUCHI, T. AOKI, K. OOTO, AND T.
SUGII
GROWTH OF LOW-TEMPERATURE POLYCRYSTALLINE SI FILM BY DIRECT NEGATIVE SI
ION BEAMS 375
M.TL. SOHN, D. KIM, Y.O. AHN, AND S.I. KIM
EIECTRICAI RESISTIVITY OF COPPER FILMS BY PARTIALLY LONIZED BEAM
DEPOSITION 381
S. TIAN, KM. YOON, KU. KIM, H.Q. JANG, S.C. CHOL, TL-J. JUNG, AND S-K
KOH
*LNVITED PAPER
IX
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THERMAL STABILIFY OF CU FILMS ON TIN/TI/SI(100) BY
PARTIALLY LONIZED BEAM DEPOSITION 387
H.O. JANG, K.H. KIM, DJ. CHOL S. HAN, S.C. CHOL W-K. CHOL H-J. JUNG, AND
S-K. KOH
GROWTH OF GEI- X C X ALLOYS ON SI BY COMBINED LOWENERGY LON-BEAM AND
MOLECULAR-BEAM-EPITAXY METHOD 393
H. SHIBATA, S. KIMURA, P. FOENS, A. YAMADA, Y. MAKITA, A. OBARA, N.
KOBAYASHI, H. TAKAHASHI, H. KATSUMATA, J. TANABE, AND S. UEKUSA
PART II: NANOCRYSTALLINE AND OTHER OPTICAL MATERIALS
COMBINED LON-BEAM AND LASER-BEAM SYNTHESIS OF SILVER OXIDE NANOCLUSTERS
IN SODA-URNE GLASS 401
R.F. HAGLUND, JR., D.H. OSBORNE, JR., F. QONELLA, P. MAZZOIDI, AND Q.
BATTAGLIN
OPTICAL PROPERTIES OF MULTICOMPONENT CADMIUM-SILVER NANOCLUSTER
COMPOSITES FORMED IN SILICA BY SEQUENTIAL ION IMPLANTATION 411
R.A. ZUHR, R.H MAGRUDER, III, AND T.S. ANDERSON
FORMATION OF SILVER METAL NANOCLUSTERS IN MGO BY MEV AG IMPLANTATION 417
D. IIA, Z. WU, R.L. ZLMMERMAN, S. SARKISOV, Y. QIAN, D.B. POKER, AND
D.K. HENSLEY
NONLINEAR OPTICAL RESPONSE OF METALLIC AND SEMICONDUCTING NANOCRYSTALS
IN FUSED SILICA 423
R.Q. ELLIMAN, B. LUTHER-DAVIES, N. SAMOC, AND A. DOWD
LINEAR AND NONLINEAR OPTICAL PROPERTIES OF METAL NANOCLUSTER-SILICA
COMPOSITES FORMED BY IMPLANTATION OF SB IN HIGH-PURITY SILICA 429
R.H. MAGRUDER, III, R.A. WEEKS, T.S. ANDERSON, AND R.A. ZUHR
HIGH-CURRENT IMPLANTATION OF NEGATIVE COPPER IONS INTO SILICA GLASSES
435
N. KISHIMOTO, V.T. ORITSYNA, K. KONO, H. AMEKURA, AND T. SAITO
OPTICAL AND STRUCTURAL CHARACFERIZATION OF ZINC-IMPLANTED SILICA UNDER
VARIOUS THERMAL TREATMENTS 441
R. MU, JINLI CHEN, Z.Y. QU, A. UEDA, Y-S. TUNG, D.O. HENDERSON, C.W.
WHITE, JANE O. ZHU, JOHN D. BUDAI, AND R.A. ZUHR
CARBON IMPLANTED IN OPTICAL GRADE FUSED SILICA: ANNEALING EFFECTS IN
REDUCING AND OXIDIZING ATMOSPHERES 447
Y-S. TUNG, R. MU, A. UEDA, D.O. HENDERSON, P.W. WANG, C. W. WHITE, JANE
Q. ZHU, AND R.A. ZUHR
INVITED PAPER
X
IMAGE 8
QUANTUM-SIZED SILICON PRECIPITATES IN SILICON-IMPLANTED
AND PULSE-ANNEALED SILICON DIOXIDE FILMS: PHOTOLUMINESCENCE AND
STRUCTURAL TRANSFORMATIONS 453
I.E. TYSCHENKO, O.A. KACHURIN, K.S. ZHURAVLEV, H.A. PAZDNIKOV, V.A.
VOLODIN, A.K. QUTAKOVSKY, A.F. LEIER, H. FROEB, K. LEO, T. BOEHME, L.
REBOHLE, R.A. YANKOV, AND W. SKORUPA
EXCITATION AND DE-EXCITATION PROCESSES IN ER IMPLANTED LIGHT-EMITTING SI
DEVICES 459
Q. FRANZO, S. COFFA, AND F. PRIOLO
ER-DOPED AMORPHOUS AND CRYSTALLINE AI2O3 AND 1.0203 FILMS GROWN WITH
LOW-ENERGY IONS FROM AN ECR PLASMA 465
J.C. BARBOUR, B.Q. POTTER, D.M. FOLLSTAEDT, J.A. KNAPP, AND M.B.
SINCLAIR
OPTICAL PROPERRIES AND SURFACE ROUGHNESS OF ION IMPLANTED SINGLE-CRYSTAL
SAPPHIRE 471
J.D. DEMAREE, S.R. KIRKPATRICK, A.R. KIRKPATRICK, AND J.K. HIRVONEN
VIOLET LUMINESCENCE FROM GE + -IMPLANTED SI02 FILM ON SI SUBSTRATE 477
XI-MAO BAO, TING OAO, FENG YAN, AND SONG TONG
HE-IMPLANTED CHANNEL WAVEGUIDES OF NEW DESIGN FOR EFFICIENT BLUE LASER
LIGHT GENERATION 483
L. BECKERS, ST. BAUER, CH. BUCHAI, D. FLUCK, T. PLISKA, AND P. GUENTER
PARTIM: POLYMERS
*LON-BEAM DAMAGE OF POLYMER SURFACES: INSIGHTS FROM MOLECULAR-DYNAMICS
SIMULATION 491
D.W. BRENNER, O. SHENDEROVA, AND C.B. PARKER
EFFECTS OF MEV ION BEAM ON POLYMERS 499
A.L. EVELYN, D. IIA, R.L. ZIMMERMAN, K. BHAT, D.B. POKER, AND D.K.
HENSLEY
SURFACE MODIFICATION OF POLYMER BY LON-ASSISTED REACTION IN REACTIVE
GASES ENVIRONMENT 505
S-K. KOH, S.C. CHOL W-K. CHOL H-J. JUNG, AND H.H. HUR
PLASMA IMMERSION ION IMPLANTATION MODIFICATION OF SURFACE PROPERTIES OF
POLYMER MATERIAL 511
IMAD F. HUSEIN, YUANZHONG ZHOU, SHU QIN, CHUNG CHAN, JACOB I. KLEIMAN,
AND KRASSIMIR MARCHEV
*LNVITED PAPER
XI
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IDENTIFICATION OF HYDROPHILIC GROUP FORMATION ON
POLYMER SURFACE DURING AR + ION IRRADIATION IN O2 ENVIRONMENT 517
JUN-SIK CHO, WON-KOOK CHOL, SUNG-RYONG KIM, HYUNG-JIN JUNG, AND
SEOK-KEUN KON
SURFACE MODIFICATION OF POLYTETRAFLUOROETHYLENE BY AR + IRRADIATION FOR
IMPROVING ADHESION TO OTHER MATERIALS 523
S-K. KOH, S.C. PARK, J.W. SEOK, S.C. CHOL, W-K. CHOL AND TL-J. JUNG
PART IV: NOVEL APPLICATIONS AND TECHNIQUES
STRUCTURAL AND MAGNETIC PROPERTIES OF LON-BEAMDEPOSITED NANOCRYSTALLINE
AL-CO AND AL-CO-O FILMS 531
U.R. KHAN AND F. BROUERS
ALPHA PARTICLE BEAM INTERACTIONS WITH FE-BASED AND FECO-BASED AMORPHOUS
MAGNETS 537
MONICA SORESCU AND D. BARB
*PLASMA AND ION BEAM TOOLS FOR ENHANCED BATTERY ELECTRODE PERFORMANCE
543
A. ANDERS, F. KONG, Y. CHEN, O.R. MONTEIRO, F.R. MCLARNON, AND I.Q.
BROWN
STUDY OF THE LON-ACOUSTIC EFFECT USING FOCUSED ION BEAMS 555
J. REICHERT, L. BISCHOFF, AND B. KOEHLER
TUNNELING CURRENT CHANGE OF GRAPHITE SURFACE BY SINGLE-ION IRRADIATION
561
H. OGISO, W. MIZUTANI, S. NAKANO, FI. TOKUMOTO, AND K. YAMANAKA
PARTV: NITRIDE FILMS AND HARD COATINGS
CARBON NITRIDE FILMS FORMED USING SPUTTERING AND NEGATIVE CARBON ION
SOURCES 569
I.FI. MURZIN, Q.S. TOMPA, J. WEI, V. MURATOV, T.E. FISCHER, AND V.
YAKOVLEV
QUANTITATIVE ANALYSIS OF CHEMICALLY-ENHANCED SPUTTERING DURING LON-BEAM
DEPOSITION OF CARBON NITRIDE THIN FILMS 575
FI. FLOFSAESS, C. RONNING, FI. FELDERMANN, AND M. SEBASTIAN
GROWTH AND MECHANICAL AND TRIBOLOGICAL CHARACTERIZATION OF MULTILAYER
HARD CARBON FILMS 581
J. W. AGER, III, I.G. BROWN, O.R. MONTEIRO, J.A. KNAPP, D.M. FOLISTAEDT,
M. RIASTASI, K.C. WALTER, AND C.J. MAGGIORE
*LNVITED PAPER
XII
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THERMAL ANNEALING BEHAVIOR OF SI-DLC IBAD COATINGS 587
CG. FOUNTZOUIAS, J.D. DEMAREE, L.C. SENGUPTA, AND J.K. HIRVONEN
PULSED LASER DEPOSITION OF DIAMONDLIKE CARBON THIN FILMS: ABLATION
DYNAMICS AND GROWTH 593
PEIDONG YANG, Z. JOHN ZHANG, JIANGTAO HU, AND CHARLES M. LIEBER
DEPOSITION AND PROPERTIES OF DOPED DIAMONDLIKE CARBON FILMS PRODUCED BY
DUAL-SOURCE VACUUM ARE PLASMA IMMERSION 599
O.R. MONTEIRO, M.P. DELPLANCKE-OGLETREE, I.O. BROWN, AND J. W. AGER, III
CARBON NITRIDE FILM FORMATION BY LOW-ENERGY POSITIVE AND NEGATIVE
LON-BEAM DEPOSITION 605
N. TSUBOUCHI, Y. HORINO, B. ENDERS, A. CHAYAHARA, A. KINOMURA, AND T .
FUJII
LARGE AREA SURFACE TREATMENT BY LON-BEAM TECHNOLOGY 611
R.L.C. WU AND W. HANTER
EVALUATING MECHANICAL PROPERTIES OF THIN LAYERS USING NANOINDENTATION
AND FINITE-ELEMENT MODELING: IMPLANTED METALS AND DEPOSITED LAYERS 617
J.A. KNAPP, D.M. FOLLSTAEDT, J.C. BARBOUR, S.M. MYERS, J.W. AGER, III,
O.R. MONTEIRO, AND I.O. BROWN
PROPERTIES OF LON-LMPLANTED TI-6AI-4V PROCESSED USING BEAMLINE AND PSII
TECHNIQUES 627
FT.C. WALTER, J.M. WILLIAMS, J.S. WOODRING, M. RIASTASI, D.B. POKER, AND
CM. MUNSON
THERMOMECHANICALLY MODULATED NANOSCALE MULTILAYERED MATERIALS FOR
APPLICATION IN ELECTROMAGNETIC GUN SYSTEMS 633
M.A. OTOONI, I.O. BROWN, AND O.R. MONTEIRO
PREPARATION OF TIC AND TIC/DLC MULTILAYERS BY METAL PLASMA IMMERSION ION
IMPLANTATION AND DEPOSITION: RELATIONSHIP BETWEEN COMPOSITION,
MICROSTRUCTURE AND WEAR PROPERTIES 639
M.P. DELPLANCKE-OGLETREE, O.R. MONTEIRO, AND I.O. BROWN
AI/AI-N/AIN COMPOSITIONAL GRADIENT FILM SYNTHESIZED BY
LON-BEAM-ASSISTED-DEPOSITION METHOD 645
YOSHIKI AMAMOTO, SHINGO UCHIYAMA, YOSHIHISA WATANABE, AND YOSHIKAZU
RIAKAMURA
INVITED PAPER
XIII
IMAGE 11
A STUDY OF THE TRIBOLOGICAL CHARACTERISTICS OF TITANIUM
NITRIDE FILM PREPARED BY THE DYNAMIC LON-BEAM MIXING METHOD FOR
APPLICATION ON SLIDING BEARINGS 651
H. HAGASAKA AND T. KOIZUMI
MECHANICAL AND TRIBOLOGICAL PROPERTIES OF CHROMIUM-NITROGEN FILMS
DEPOSITED BY LONBEAM-ASSISTED DEPOSITION 657
E.J. TOBIN, F. NAMAVAR, H.F. KARIMY, C. COLERICO-STENSTROM, R.J.
BHCAULT, JUSTUS HAUPT, J-P. HIRVONEN, AND R. AYER
PART VI: OXIDATION AND CORROSION BEHAVIOR
EFFECTS OF ALUMINUM IMPLANTATION ON THE OXIDATION BEHAVIOR OF SILICON
NITRIDE IN A SODIUM NITRATEOXYGEN GAS MIXTURE 665
Y. CHEONG, TI. DU, AND S.F. WITHROW
SURFACE MICROCHEMISTRY ASSOCIATED WITH PARTICLE BOMBARDMENT OF NI(L 11)
671
JIUN-CHAN YANG, HSIN-YEN HWANG, AND CHE-CHEN CHANG
THE INFLUENCE OF CERIUM ION IMPLANTATION ON EARLYSTAGE OXIDATION
KINETICS OF NICKEL 677
F. CZERWINSKI AND J.A. SZPUNAR PREPARATION AND CHARACTERIZATION OF TIN
OXIDE FILMS BY LON-ASSISTED DEPOSITION 683
W-K. CHOL, J-S. CHO, S.K. SONG, Y.T. KIM, K.H. YOON, TI-J. JUNG, AND
S-K. KOH
STRESS-INDUCED EXTENDED RANGES FOR HYDRATION AND OTHER PHENOMENA IN
LON-LMPLANTED SILICA GLASSES 689
O. W. ARNOLD AND Q. BATTAGLIN
PART VII: LATE PAPERS ACCEPTED
*ENGINEERED NANOCRYSTALLITES FOR ENHANCED PERFORMANCE OF CERAMIC
COATINGS BY LON-BEAM ASSISTED DEPOSITION 697
F. HAMAVAR, J. HAUPT, E. TOBIN, H. KARIMY, J. TROGOIO, F. COLTER, M.
YOGANATHAN, C. JOLIIMORE, R. BRICAULT, J.F. HIRVONEN, AND R. AYER
GRAIN-SIZE AND IMPURITY EFFECTS IN LOW-TEMPERATURE DEPOSITION OF TIN 709
H. KARIMY, F. NAMAVAR, E. TOBIN, J. HAUPT, R. BRICAULT, J.F. HIRVONEN,
AND R. AYER
*LNVITED PAPER
XIV
IMAGE 12
DEFECT DIFFUSION DURING ANNEALING OF LOW-ENERGY
LON-LMPLANTED SILICON 715
P.J. BEDROSSIAN, M-J. CATURLA, AND T. DIAZ DE LA RUBIA
AUTHOR INDEX 721
SUBJECT INDEX 725
XV
|
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| genre | (DE-588)1071861417 Konferenzschrift 1996 Boston Mass. gnd-content |
| genre_facet | Konferenzschrift 1996 Boston Mass. |
| id | DE-604.BV011341148 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:08:06Z |
| institution | BVB |
| isbn | 1558993428 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007620310 |
| oclc_num | 36407646 |
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| owner | DE-384 DE-703 DE-29T DE-83 |
| owner_facet | DE-384 DE-703 DE-29T DE-83 |
| physical | XIX, 727 S. Ill., graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Materials modification and synthesis by ion beam processing symposium held December 2 - 5, 1996, Boston, Massachusetts, USA ed.: Dale E. Alexander ... Pittsburgh, PA Materials Research Soc. 1997 XIX, 727 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 438 Ion implantation Congresses Materials Effect of radiation on Congresses Semiconductor doping Congresses Silicon Effect of radiation on Congresses Ionenstrahlbearbeitung (DE-588)4277034-8 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1996 Boston Mass. gnd-content Ionenstrahlbearbeitung (DE-588)4277034-8 s DE-604 Alexander, Dale E. Sonstige oth Materials Research Society: Materials Research Society symposia proceedings 438 (DE-604)BV001899105 438 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007620310&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Materials modification and synthesis by ion beam processing symposium held December 2 - 5, 1996, Boston, Massachusetts, USA Materials Research Society: Materials Research Society symposia proceedings Ion implantation Congresses Materials Effect of radiation on Congresses Semiconductor doping Congresses Silicon Effect of radiation on Congresses Ionenstrahlbearbeitung (DE-588)4277034-8 gnd |
| subject_GND | (DE-588)4277034-8 (DE-588)1071861417 |
| title | Materials modification and synthesis by ion beam processing symposium held December 2 - 5, 1996, Boston, Massachusetts, USA |
| title_auth | Materials modification and synthesis by ion beam processing symposium held December 2 - 5, 1996, Boston, Massachusetts, USA |
| title_exact_search | Materials modification and synthesis by ion beam processing symposium held December 2 - 5, 1996, Boston, Massachusetts, USA |
| title_full | Materials modification and synthesis by ion beam processing symposium held December 2 - 5, 1996, Boston, Massachusetts, USA ed.: Dale E. Alexander ... |
| title_fullStr | Materials modification and synthesis by ion beam processing symposium held December 2 - 5, 1996, Boston, Massachusetts, USA ed.: Dale E. Alexander ... |
| title_full_unstemmed | Materials modification and synthesis by ion beam processing symposium held December 2 - 5, 1996, Boston, Massachusetts, USA ed.: Dale E. Alexander ... |
| title_short | Materials modification and synthesis by ion beam processing |
| title_sort | materials modification and synthesis by ion beam processing symposium held december 2 5 1996 boston massachusetts usa |
| title_sub | symposium held December 2 - 5, 1996, Boston, Massachusetts, USA |
| topic | Ion implantation Congresses Materials Effect of radiation on Congresses Semiconductor doping Congresses Silicon Effect of radiation on Congresses Ionenstrahlbearbeitung (DE-588)4277034-8 gnd |
| topic_facet | Ion implantation Congresses Materials Effect of radiation on Congresses Semiconductor doping Congresses Silicon Effect of radiation on Congresses Ionenstrahlbearbeitung Konferenzschrift 1996 Boston Mass. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007620310&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT alexanderdalee materialsmodificationandsynthesisbyionbeamprocessingsymposiumhelddecember251996bostonmassachusettsusa |