APA (7th ed.) Citation

Xu, D. (1997). Sub-0.2 mym double sided modulation doped InAlAs InGaAs heterojunction field effect transistor with InAs layer in the channel.

Chicago Style (17th ed.) Citation

Xu, Dong. Sub-0.2 Mym Double Sided Modulation Doped InAlAs InGaAs Heterojunction Field Effect Transistor with InAs Layer in the Channel. 1997.

MLA (9th ed.) Citation

Xu, Dong. Sub-0.2 Mym Double Sided Modulation Doped InAlAs InGaAs Heterojunction Field Effect Transistor with InAs Layer in the Channel. 1997.