III-Nitride, SiC and diamond materials for electronic devices: symposium held April 8 - 12, 1996, San Francisco, California, U.S.A.
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| Format: | Book |
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| Language: | English |
| Published: |
Pittsburgh, Pa.
Materials Research Soc.
1996
|
| Series: | Materials Research Society: Materials Research Society symposia proceedings
423 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XVII, 792 S. Ill., graph. Darst. |
| ISBN: | 1558993266 |
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| 245 | 1 | 0 | |a III-Nitride, SiC and diamond materials for electronic devices |b symposium held April 8 - 12, 1996, San Francisco, California, U.S.A. |c ed.: D. Kurt Gaskill ... |
| 246 | 1 | 3 | |a Three-nitride, SiC and diamond materials for electronic devices |
| 264 | 1 | |a Pittsburgh, Pa. |b Materials Research Soc. |c 1996 | |
| 300 | |a XVII, 792 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Materials Research Society: Materials Research Society symposia proceedings |v 423 | |
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| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1996 |z San Francisco Calif. |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiterwerkstoff |0 (DE-588)4158817-4 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Gaskill, D. Kurt |e Sonstige |4 oth | |
| 830 | 0 | |a Materials Research Society: Materials Research Society symposia proceedings |v 423 |w (DE-604)BV001899105 |9 423 | |
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| adam_text | CONTENTS
Preface
................................................................xvii
Materials Research Society Symposium
Proceedings
................... xviii
PARTI:
DEVICE TECHNOLOGIES
Devices
SiC
Semiconductor
Applications - An Air Force
Perspective
..............3
Laura S.
Rea
SiC Power Devices.......................................................9
Ύ.Ρ.
Chow and M. Qhezzo
Growth of High Quality (ln,Ga,AI)N/GaN Heferostructure
Materials and Devices by Atmospheric Pressure MOCVD
.................23
S.P. DenBaars. S. Keller, B.P. Keller, Y.F. Wu,
D. Kapolnek, and U.K. Mishra
Investigation of an
NEA
Diamond Vacuum
Microtriode
Array
.......................................................33
C.
W.
flatfìeld,
Q.L.
Bilbro,
A.S. Morris, P.K.
Baumann,
B.L. Ward, and R.J. iiemanich
Tetrahedral Amorphous Carbon Thin Film Transistors
.....................39
F.J. Clough, B.
Kleinsorge,
W.I. Milne,
and J. Robertson
Theoretical Prediction of Zinc Blende Phase GaN
Avalanche
Photodiode
Performance Based on Numerically
Calculated Electron and Hole Impact lonization
Rate Ratio
..............................................................45
J.
Kolnik,
1.П.
Oguzman, K.F.
Brennan,
R.
Wang,
and P.P.
Rüden
OBIC Measurements on
бН
-SiC
Schottky Diodes
.........................51
K.
Rottner.
Α.
Schöner,
M.
Frischholz,
and
R. Helbig
Defect Dominant Junction Characteristics of
4H-SÍC
p+ /n Diodes
......................................................57
J.
Scofìeld,
M.
Dunn,
К.
Reinhardt,
Y.K. Yeo,
and R. tfengehold
Fabrication of Highly Oriented, Smooth Diamond
Films on Silicon for Electronic Devices
...................................63
S.D. Wolter, Т.Н. Borst,
P. Qiuche, W. Ebert,
A. Vescan, and E. Kohn
Invited Paper
Radiative Recombination Rates in GaN, InN,
AIN
and Their Solid Solutions
.................................................69
A. V. Dmitriev and A.L. Oruzhelnikov
Pyroelectric Effect in Wurtzite Gallium Nitride
............................75
A.D.
Bykhovski, V.V.
Kaminski,
M.S. Shur, Q.C. Chen,
and M.A. Khan
CVD Diamond Wires as X-ray Detectors
..................................81
C. Manfredotti, F. Fizzotti, M.
Gaietto, A. Lo Giudice,
D.
Margherita,
С.
Ongaro, P. Polesello, and E. Vittone
Critical Materials, Device Design, Performance and
Reliability Issues in
4H-SÌC
Power UMOSFET Structures
.....................87
AM. Agarwal, R.R. Siergiej, S. Seshadri, M.ti. White,
P.O. McMuIlin,
A.A.
Burk,
L.B.
Rowland, CD. Brandt,
and R.ti. Hopkins
High-Temperature Switching Characteristics of
6H-SÍC
Thyristor.........................................................93
К.
Xie, J.R. Flemish, T. Burke, W.R.
Buchwald,
and
J.
ti.
Zhao
Characterization of
4Н-ЅГС
MOS
Capacitors by
a Fast-Ramp Response Technique
.......................................99
T.S. Sudarshan, V.P. Madangarli, Q. Oradinaru,
C.C. Tin, R.
Пи,
and T. Isaacs-Smith
Characterization of
4H-SÍC
JFETs for Use in
Analog Amplifiers Capable of 723K Operation
..........................105
J.B. Casady, D.C. Sheridan, W.C. Dillard, and R.W. Johnson
High Electric Field Breakdown of
4H-SÍC
p-n
Junction Diodes
........................................................
Ill
C.C. Tin, V. Madangarli,
R. Hu. E.
Luckowski,
J.
Casady,
T.
Isaacs-Smith,
О.
Oradinaru, T.S. Sudarshan, and
R. W.
Johnson
Metallizations
Improved Nickel Suicide Ohmic Contacts to n-Type
4H and 6H-SIC Using Nichrome
..........................................119
E.D. Luckowski, J.R. Williams, M.J. Bozack,
T. Isaacs-Smith, and J. Crofton
Chemical and Structural Characterization of the
Ni-Ti Alloy/
6H-SÍC
Contacts
............................................125
M.
Levit,
I.
Grimberg,
B.-Z. Weiss, and M. Eizenberg
Low Resistance Ohmic Contact on p-type GaN Grown
by Plasma-Assisted Molecular Beam Epitaxy
............................131
Myung
С
Yoo, J.W. Lee, J.M. Myoung, K.H. Shim,
andK. Kim
VI
Approaches to High Temperature Contacts to
Silicon Carbide
.........................................................137
J.M. Del
ucea
and S.E. Mohney
Characterization of Zirconium
-
Diamond Interfaces
.....................143
P.K
Baumann,
S.P. Bozeman, B.L. Ward, and R.J. tiemanich
Ohmic Contacts to
п
-Type óH-SiC
Without
Post-Annealing
.........................................................149
Tokuyuki Teraji, Shiro tiara, tiideyo Okushi,
and
Koji Kajimura
Etching
Photothermally Assisted Dry Etching of GaN
.............................157
R.T. Leonard and S.M. Bedair
Dry Etch Damage in InN, InGaN and InAIN
................................163
S.J. Pearton, J. W. Lee, J.D. MacKenzie,
C.B. Vart
uli,
S.M. Donovan,
CR.
Abemathy, R.J.
Snuł,
F. Ren,
and J. R.
Lothian
Optical Spectroscopy of Dry-Etched GaN-Nanostructures
...............169
H.
Zuli,
J.
Müller,
J.
Koeth, F. Kleseling, and
Λ.
Forche!
Photocurrent
Sensitivities, Surface Color, and Auger
Spectroscopy of Silicon Carbide (SiC) by Photoelectro-
Chemical (PEC) Etching
................................................175
D.M.
Collins, O.L. Ham s, and Naiqun Chen
Implantation
Si Implantation and Annealing of GaN for n-Type
Layer Formation
........................................................183
B.
Moinar,
A.E. Wickenden,
and M.V. Rao
p- and
η
-Type
Implantation Doping of GaN
with Ca and
О
..........................................................189
J.C.
Zolper, R.O. Wilson, S.J. Pearton, and R.A. Stall
Ion Beam Synthesis of Tungsten Implantation into
6H-Silicon Carbide at Elevated Temperatures
...........................195
Hannes Weishart, W. Matz, and
W. Skorupa
ТЕМ
Structure Characterization of
Ti/Al
and
Ti/Al/Ni/Au
Ohmic Contacts for n-GaN
.................................201
S. Ruvimov, Z. Liliental-Weber, J. Washburn,
K.J.
Duxstad,
E.E.
Haller.
Z.-F. Fan,
Ѕ.П.
Mohammad, W. Kim. A.E. Botchkarev,
and H. Morkoc
BETA Silicon Carbide pn Junction Diodes
................................207
J.C. Coleman, O.L. Harris, and D.B. Poker
VII
PARTII:
CRYSTAL AND FILM GROWTH
Bulk and Bulk-Like Crystal Growth
Analysis of the Sublimation Growth Process
of Silicon Carbide Bulk Crystals
......................................... 215
R. Eckstein, D.
Hofmann,
Y.
Makarov, St.
G. Muller,
О.
Pensi E.
Schmitt,
and A. Winnacker
Gallium Nitride Thick Films Grown by Hydride
Vapor Phase Epitaxy
................................................... 221
R.J.
Moinar,
P.
Maki,
R.
Aggarwal, Z.L.
Lian, E.R.
Brown,
I. Melngailis, W.
Qõtz,
L.T. Romano, and
n.M.
Johnson
Optimization of Reactor Geometry and Growth Conditions
for GaN Halide Vapor Phase Epitaxy
.....................................227
S.A.
Safvi, H.R. Perkins,
М.П.
Horton,
A. Thon,
D.
Zhi, and T.F. Kuech
Thermodynamic Analysis and Growth Characterization of
Thick GaN Films Grown by Chloride VPE Using
GC1CI3/N2 and HN3/N2
................................................... 233
Neon Lee, Masaaki Yuri, Tetsuzo Ueda, and James S. Harris, Jr.
High Resolution X-ray Diffraction Analysis of Gallium
Nitride Grown on Sapphire by Halide Vapor
Phase Epitaxy
.......................................................... 239
R.J.
Matyi,
D.
Zhi, n.R. Perkins,
М.П.
Horton,
and
T.F. Kuech
Structural Characterization of Thick GaN Films
Grown by Hydride Vapor Phase Epitaxy
................................. 245
L.T. Romano, R.J.
Moinar, B.S.
Krusor,
O.A.
Anderson,
D.P.
Bour,
and P.
Maki
Film Growth
Silicon Carbide CVD Approaches Industrial Needs
...................... 253
R. Rupp, P. Lanig, J.
Võlkl
and D. Stephani
Kinetics Approach to the Growth of Cubic
Boron Nitride
........................................................... 265
C.A. Taylor, II and Roy Clarke
The Impact of Pregrowth Conditions and Substrate
Polytype on SiC Epitaxial Layer Morphology
..............................275
A.A.
Burk,
Jr., L.B. Rowland, O. Augustine,
H.M. Hobgood, and R.H. Hopkins
Invited Paper
VIII
Nucleation
and Growth of Oriented Diamond
Films on Nickel Substrates
..............................................281
P.C.
Yang, W. Liu, D.A. Tucker,
С.Л.
Wolden, R.F.
Davis,
J.T.
Glass,
J.T.
Prater, and Z.
Sitar
Nucleation
and Growth of Gallium Nitride Films on Si
and Sapphire Substrates Using Buffer Layers
............................287
ri.R. Perkins,
М.П.
Horton,
D.
Zhi, R.J.
Matyi,
Z.Z. Bandic, T.C. McOill, and
Т.Г.
Kuech
Seeding with a Diamond Suspension for Growth of Smooth
Polycrystalline Diamond Surfaces
.......................................293
I. St. Omer, T. Stacy, E.M. Charlson, and
E.J. Charlson
Properties of Tetrahedral Amorphous Carbon
Deposited by a Filtered Cathodic Vacuum Arc
..........................299
M. Chhowalla,
С
W.
Chen,
В.
Шетѕогде,
J.
Robertson,
O.A.
J.
Arnaratunga,
and W.I. Milne
X-ray Diffraction Analysis of Strain and Mosaic
Structure in
(001)
Oriented Homoepitaxial Diamond Films
................305
W. Brock Alexander,
Pehr
E. Pehrsson,
David Black,
and James E. Butler
ТЕМ
and PL Characterisation of MBE-Grown
Epitaxial GaN/GaAs
....................................................311
Yan Xin,
P.D.
Brown,
C.B.
Boothroyd, A.R. Preston,
C.J. Humphreys, T.S. Cheng, C.T. Foxon, A.V. Andrianov,
andJ.W. Orton
Chemical Beam Epitaxy of GaNxPl -x Using a
N
Radical Beam Source
...................................................317
Π.Υ.
Li,
D.H. Tomich,
W.S. Wong, J.S. Solomon,
andCW.
Tu
Improved Aluminum Nitride Thin Films Grown by MOCVD
From Tritertiarybutylaluminum and Ammonia
............................323
Г.
Metzger,
E. Bom, R.
Stommer,
W.
Rieger, R.
Dimitrov,
D.
Lente,
H.
Angerer,
O. Ambacher, and M.
Stutzmann
Properties of Homoepitaxially MBE-Grown GaN
..........................329
T.
Suski,
J.
Krueger,
С.
Kisielowski, P. Phatak.
M.S.H. Leung, Z. Liliental-Weber. A.
Oassmann,
П.
ľiewman,
M.D. Rubin, E.R. Weber, I. Qrzegory, J.
Jun.
M.
Bockowski,
S.
Porowski, and tl.l.
Helava
Lattice-Matched lnAsN(X=0.38) on GaAs Grown by
Molecular Beam Epitaxy
................................................335
КС.
Kao,
T.P.E.
Brœkaert, H.Y.
Liu,
S.
Tang,
I.
H.
Ho, and O.B. Stringfellow
Growth and Characterization of AllnGaN/lnGaN
Heterostructures
.......................................................341
J.C. Roberts, F.O. Mclntosh, M. Aumer, V. Joshkin,
K.S.
Boutros,
E.L. Finer, Y. W. He,
П.Л.
El-Masry,
and S.M. Bedair
Growth and Characterization of AIGaN/GaN Heterostructures
with Multiple Quantum Wells by PAMBE
..................................347
K.H. Shim, J.M. Myoung, O.V. Qluschenkov,
С
Kim,
K. Kim, M.C. Yoo, S. Kim, D.A. Turnbull, and
S.O.
Bishop
Origin of High-Conductivity Layer Near the Surface
in As-Grown Diamond Films
.............................................353
Sadanori Yamanaka, Kazushi Hayashi, tiideyo Okushi,
and
Koji Kajimura
GaN Film Growth by a Supersonic Arcjet Plasma
.........................359
M.A.
Cappelli,
A.E.
Kuli,
К.
Schwendner,
H. Lee, S.J.
Harris,
Jr., and
J.
Mroczkowski
Particle-Assisted Oriented Deposition of Diamond Thin Films
............365
Dong-Qu Lee and Rajiv K. Singh
Deposition of Adherent Diamond Films on
Sapphire Substrates
....................................................371
Donald R.
Gilbert
and Rajiv K. Singh
GaN Growth by Nitrogen ECR-CVD Method
..............................377
K.H. Chen, C.H.
Chao,
T.J. Chuang, Y.J. Yang,
L.C. Chen,
CK.
Chen,
Υ.Γ.
Huang, C.H. Yang,
H.Y.
Lin, I.M.
Chang, and Y.F. Chen
High Quality
p
-Туре
GaN Films Grown by
Plasma-Assisted Molecular Beam Epitaxy
...............................385
J.M. Myoung,
С
Kim, K.H. Shim, O. Qluschenkov,
K. Kim, and M.C. Yoo
Influence of the Growth Atmosphere on the Properties of
AIN
Grown by Plasma-Assisted Pulsed Laser Deposition
......................391
T. Ogawa, M. Okamoto, Y. Mori, and T. Sasaki
Laser Wavelength Dependent Properties of BN Thin
Films Deposited by Laser Ablation
......................................397
Y. Suda, T. Tiakazono, K
Ebihara, and
K. Baba
Preparation and Characterization of Wurtzitic GaN Single
Crystals in
Nano
and Micro Scale
.......................................403
San Yu,
Hongdong
Li, Haibin Yang, Dongmei Li,
Haiping Sun, and Quangtian
Zou
Growth of Crystalline Quality SiC on Thin and
Thick Silicon-on-lnsulator Structures
....................................409
F. namavar, P. Colter, A. Cremins-Costa,
C
-Н.
Wu,
E. Oagnon, D. Ferry, and P. Pirouz
Growth and Characterization of Polycrystalline
Diamond Thin Films on Porous Silicon by Hot
Filament Chemical Vapor Deposition
...................................415
S. Mirzakuchaki, E.J. Charlson, E.M. Charlson,
T. Stacy, F. Shahedipour, and H.W. White
Reconstruction of
Nonpolar GaN
Surfaces
..............................421
J. Eisner, M. Haugk, and Th.
Frauenheim
Stability and Reconstruction of
ß-SiC (100)
Surfaces
....................427
R. Gutierrez and Th.
Frauenheim
A New, Nearly Single-Domain Surface Structure of
Homoepitaxial Diamond
(001)
Films
.....................................433
Yalei Huang,
ľiaesung
Lee,
Andrzej Badzian,
Teresa Badzian, and Tien T. Tsong
Computer Simulation of Surface Diffusion of Silicon and
Carbon
Adatoms
on
SiC(OOl)
...........................................439
Q.A. Bhatti, Q.J.
Moran,
and C.C. Matthai
High Temperature Gas Phases Reactions of
Trimethylgallium with Ammonia and Trimethylamine
.....................445
A. Thon,
S.A.
Safvi, and T.F. Kuech
Atomic Force Microscopy Study of GaN-Buffer
Layers on
SiC(OOOl)
by MOCVD
.........................................451
Dongsup
Lim,
Dongjin Byun, Qyeungho Kim, Ok-ffyun Ham,
¡п
-Hoon
Choi, Dalkeun Park, and Dong-Wha
Kum
ТЕМ
Analysis of the Observed Phases
During the Growth of Oriented Diamond
on Nickel Substrates
...................................................457
W. Liu,
P.C.
Yang, D.A. Tucker,
CA. Wolden,
R.F.
Davis, J.T. Qlass, J.T. Prater, and Z.
Sitar
Partili:
DEFECTS. DOPANTS AND CHARACTERIZATION
Defects and Structural Properties
Theory of Defects, Doping, Surfaces and
Interfaces in Wide Gap Nitrides
.........................................465
J. Bernholc. P.
Bogusławski, E.L.
Briggs,
M.
Buongiorno
nardelli,
В.
Chen,
К.
Rapcewicz,
and
Z.
Zhang
Structural Defects and Their Relationship to
Nuclearion of GaN Thin Films
............................................475
Weida Qian,
Marek
Skowronski, and Qreg S. Rohrer
Invited Paper
xi
Effect of Si Doping on the Structure of GaN
.............................487
Zuzanna
Liliental-Weber, S. Ruvimov, T.
Suski,
J.W.
Ager,
¡И,
W. Świder,
Y.
Chen,
Ch. ľíisielowski,
J. Washburn,
1.
Akasaki, H.
Amano,
C.
Huo,
and W. Imler
ESR
and LESR Studies in
CVD Diamond
...................................495
C. F. O. Qraeff, E. Rohrer, C. E. ľiebel, M.
Stutzmann,
H. Quttler, and R. Zachai
Electron Paramagnetic Resonance Studies of
HF-CVD Diamond Films
.................................................501
B. Ramakrishnan, D.J. Keeble,
H. Rodrigo,
and
A. Kulkami
Electrical and Optical Investigation of the
Position of Vanadium Related Defects in the 4H
and 6H SiC
Bandgaps
...................................................507
J.R. Jenny, M. Skowronski, W.C. Mitchel, S.R. Smith,
A.O. Evwaraye, H.M. tiobgood, Q. Augustine,
and R.H. Hopkins
Electron Scattering by Native Defects in
Ill-V Nitrides and Their Alloys
............................................513
L. Hsu and W. Walukiewicz
Characterization of Deep Level Defects in 4H and 6H
SiC Via DLTS, SIMS and MeV
Е
-Beam Irradiation
..........................519
J.P. Doyle, M.O. Aboeifotoh, M.K. Linnarsson,
B.Q.
Svensson,
Α.
Schöner,
П.
riordeil,
С.
Harris,
J.L. Lindström,
E. Janzén,
and C. Hemmingsson
Deep Level Defects in Mg-Doped GaN
..................................525
Qyu-Chul Yi and Bruce W. Wessels
DLTS and
CV
Analysis of Doped and N-lmplanted GaN
...................531
D. Haase, M.
Schmid,
Α.
Domen,
V.
Harte,
Η.
Bolay,
F. Scholz,
M.
Burkard, and
H.
Schweizer
The Relationship Between
Micropipes
and Screw
Dislocations in PVT Grown
бН
-SiC
.......................................
539
Jennifer Oiocondi, Gregory S. Rohrer,
Marek
Skowronski,
V. Balakrishna, O. Augustine, H.M. Hobgood, and
R.H. Hopkins
Characterization of Defect Structures in
ЗС
-SiC
Single Crystals Using Synchrotron White Beam
X-ray Topography
......................................................545
W. Huang, M. Dudley, and
С
Fazi
Structure of the
2H-AIN/6H-SÌC
Interface
...............................551
P. Vermaut, P.
Ruterana, Q.
üouet,
and
H. Morkoc
xii
Extrapolation of Critical Thickness of GaN Thin
Films from Lattice Constant Data Using
Synchrotron X-ray
......................................................557
Chinkyo Kim, I.K. Robinson, Jaemin Myoung, Kyuhwan Shim,
Kyekyoon Kim, and Myung-Cheol Yoo
Ex Situ and In Situ Methods for Complete Oxygen
and Non-Carbidic Carbon Removal from
(OOOl)si
6H-SÍC
Surfaces
................................................563
Sean W. King, Mark C. Benjamin, Richard S.
Kem,
Robert J. rtemanich, and Robert F. Davis
High Temperature Surface Degradation of
Ill-V Nitrides
............................................................569
C.B.
Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie,
J.C. Zolper, and E.S. Lambers
Morphology of Optically Transparent Cubic Silicon
Carbide Prepared by Chemical Vapor Deposition
.......................575
Michael W. Russell, Jaime
A. Freitas,
Jr., and James E. Butler
Doping and Electrical Properties
Dopant Incorporation Efficiencies of SiC Crystals
Grown on
{1
100}-Face
..................................................583
Tiaohiro Sugiyama, Atsuto Okamoto, Toshihiko
Tani,
and tiobuo Kamiya
Low Volume Resistivity Chemical Vapor Deposited
Boron Doped Polycrystalline Thin Diamond Film Growth
on Sapphire
............................................................589
Hassan Golestanian, S. Mirzakuchaki, E.J. Char/son,
T. Stacy, and E.M. Charlson
Activation of Acceptors in Mg-Doped,
p
-Туре
GaN
.....................595
W.
Götz,
П.М.
Johnson, J. Walker, and D.P.
Bour
Electrical Characterization of Magnesium-Doped
Gallium Nitride Grown by Metalorganic Vapor
Phase Epitaxy
..........................................................601
J.W. Huang,
ti.
Lu,
J.Q. Cederberg,
1.
Bhat,
and T.F. Kuech
The Influence of Hydrogen Plasma Passivation on
Electrical and Optical Properties of AIGaN Samples
Grown on Sapphire
.....................................................607
A.Y. Polyakov, M. Shin, S.J. Pearton, M. Skowronski,
D.W.
Greve,
and J.A.
Freitas
Theoretical Study of Hydrogen in Cubic GaN
............................613
Stefan K.
Estreicher
and Djordje M. Marie
XIII
Role of Hydrogen and Hydrogen Complexes in Doping
ofGaN
................................................................. 619
Jörg
fíeugebauer
and Chris O. Van
de Walle
Diffusion of Hydrogen in 6H Silicon Carbide
............................. 625
M.K. Linnarsson, J.P. Doyle, and B.Q.
Svensson
Electronic Structure of Beryllium, Magnesium and
Silicon Impurity in Cubic Gallium Nitride
................................. 631
V.A. Oubanov, E. Pentaleri, C.Y. Fong, and B.M. Klein
Impurity Conduction in
η
-Type
4H-SÌC
...................................637
A.O. Evwaraye, S.R. Smith, W.C. Mitchel,
and M.D. Roth
Factors Influencing the Electrical and Optical
Properties of AIGaN Layers on Sapphire
................................. 643
Λί.
Shin,
Λ.Υ.
Polyakov, M. Skowronski,
D.W.
Greve,
R.Q. Wilson, andJ.A.
Freitas
Influence of Forced Diffusion of Boron on Electrical
Conductivity of Diamond Films
......................................... 649
T. Sung, Q. Popovici, M.A. Prelas, R.Q. Wilson, Kim Bigeiow,
J. Chacon, and S.K. Loyalka
Measurement of the Activation Energy in Phosphorous Doped
Polycrystalline Diamond Thin Films Grown on Silicon
Substrates by Hot Filament Chemical Vapor Deposition
................. 655
S. Mirzakuchaki,
ti.
Qolestanian, E.J. Charlson, and
and T. Stacy
Theory and Realization of Two-Layer Hall Effect
Measurement Concept for Characterization of Epitaxial
and Implanted Layers of SiC
............................................ 661
Adolf Schöner, Kurt Rottner,
and nils ¡iordell
Formation and High Frequency CV-Measurements of
Aluminum/Aluminum Nitride/6H Silicon Carbide Structures
...............667
С.-ІЧ.
Zetterling, K.
Wongchotigul, M.Q. Spencer,
C.I. Harris,
S.S.
Wong, and M. Ostling
Optical and Field Emission Properties
Electronic Structure and Temperature Dependence of
Excitons
in GaN
.........................................................675
I.A.
Buyanova. J.P. Bergman, W. Li, B. Monemar,
H.
Amano,
and I. Akasaki
Optical Properties and Morphology of GaN Grown by
MBE on Sapphire Substrates
............................................ 681
E. Tuncel,
D.B. Oberman,
H. Lee, T. Veda, and
J.S. Harris, Jr.
XIV
A Study of Electroluminescent Emission from
CVD Diamond
..........................................................687
C. Manfredotti,
F. fízzotti,
E. Vittorie,
P. Polesello,
F. Wang, R.
Schwarz, and
S. Qrebner
Cathodoluminescence
Studies of Bound
Excitons
and
Near Band Gap Emission Unes in Boron-and
Phosphorus-Doped CVD-Diamonds
.....................................693
fi.
Stemschulte, T.
Albrecht,
К.
Thonke,
R.
Sauer,
M.
Orießer,
and M. Orasserbauer
Characterisation of Diamond-Like Carbon by Raman
Spectroscopy and Optical Constants
..................................699
C.
Moßner,
P. Grant, H.
Tran,
O. Čiarke, D.J.
Lockwood,
H.J.
Labbé. B.
Mason, and R.
Berrìche
Thermal and Optical Admittance Spectroscopy Studies
of Defects in
15R-SÌC
...................................................705
S.R. Smith, A.O. Evwaraye, and W.C. Mitchel
Local-Field and Exchange-Correlation Effects in
Optical Spectra of Wide-Band-Gap Semiconductors
....................711
V.l.
Gavrilenko and F. Bechstedt
Photoluminescence
Properties of CVD Diamond Excited
by Ultraviolet Synchrotron Radiation
....................................717
Jaihyung Won, Akimitsu
flatta, Toshimichi
Ito,
Takatomo Sasaki, and Akio Hiraki
Surface Chemical Effects on the Optical Properties of
Thin Nanocrystalline Diamond Films
.....................................723
A.V. Khomich,
V.l.
Polyakov, P.I. Perov, V.P. Varnin.
I.Q. Teremetskaya,
V.O.
Baiakirev, and E.D. Obraztsova
Raman Spectroscopy Investigation of (SiC),.x(AIN)x
Layers Formed by Ion Implantation in
бН
-SiC
............................
729
D.R.T.
Zahn,
T.
Werninghaus,
M. Thûmer,
J. Pezoldt,
and V. Heera
Photoreflectance
Study of GaN Film Grown by
Metalorganic Chemical
Vapor Deposition ..............................
735
K.
Yang, R.
Zhang, Y.D. Zheng, L.ti. Qin, B. Shen,
H.T. Shi, Z.C. Huang, andJ.C. Chen
Thermomodulated Reflectivity Spectra of
GaN/Sapphire Epilayer
.................................................741
Y. Li,
Y. Lu,
tl.
Shen,
M. Wraback. M. Schuman, L.
Koszi,
and R.A. Stall
Optical Characterization of GaN Films Grown on
(0001)
Sapphire Substrate
.....................................................747
K. Yang, R. Zhang, Y.D. Zheng, L.H. Qin, B. Shen,
tl.T. Shi, Z.C. Huang, and J.C. Chen
XV
Optical and Structural Properties of a-Si .xCx Films
......................753
Zhizhong Chen,
Kai Yang,
Kong Zhang, Hongtao Shi,
and Youdou Zheng
Surface
Photovoltage
Effects in
Photoemission
from
Diamond Surfaces
......................................................759
C. Bandis
and B.B. Pate
Investigation of the Field Emission Current from
Polycrystalline Diamond Films
...........................................765
J.W. Qlesener and
A.A.
Morrish
Field Emission and Band Bending Considerations from
High-Quality
NEA
Diamond
..............................................771
C. Bandis,
B.B. Pate, W.
Phillips, M.A.
nano,
M.D. Moyer, and M.A. Moreno
Electron Field Emission from Diamond-Like Carbon
......................777
J. Robertson, S.R.P.
Silva, O.A.J.
Amaratunga, and
W.I. Milne
Author Index
...........................................................783
Subject Index
..........................................................789
xvi
|
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| discipline | Physik Elektrotechnik |
| format | Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1996 San Francisco Calif. gnd-content |
| genre_facet | Konferenzschrift 1996 San Francisco Calif. |
| id | DE-604.BV011180767 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:05:20Z |
| institution | BVB |
| isbn | 1558993266 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007497813 |
| oclc_num | 246780770 |
| open_access_boolean | |
| owner | DE-91G DE-BY-TUM DE-29T DE-384 DE-703 DE-83 |
| owner_facet | DE-91G DE-BY-TUM DE-29T DE-384 DE-703 DE-83 |
| physical | XVII, 792 S. Ill., graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | III-Nitride, SiC and diamond materials for electronic devices symposium held April 8 - 12, 1996, San Francisco, California, U.S.A. ed.: D. Kurt Gaskill ... Three-nitride, SiC and diamond materials for electronic devices Pittsburgh, Pa. Materials Research Soc. 1996 XVII, 792 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 423 Halbleiterwerkstoff (DE-588)4158817-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1996 San Francisco Calif. gnd-content Halbleiterwerkstoff (DE-588)4158817-4 s DE-604 Gaskill, D. Kurt Sonstige oth Materials Research Society: Materials Research Society symposia proceedings 423 (DE-604)BV001899105 423 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007497813&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | III-Nitride, SiC and diamond materials for electronic devices symposium held April 8 - 12, 1996, San Francisco, California, U.S.A. Materials Research Society: Materials Research Society symposia proceedings Halbleiterwerkstoff (DE-588)4158817-4 gnd |
| subject_GND | (DE-588)4158817-4 (DE-588)1071861417 |
| title | III-Nitride, SiC and diamond materials for electronic devices symposium held April 8 - 12, 1996, San Francisco, California, U.S.A. |
| title_alt | Three-nitride, SiC and diamond materials for electronic devices |
| title_auth | III-Nitride, SiC and diamond materials for electronic devices symposium held April 8 - 12, 1996, San Francisco, California, U.S.A. |
| title_exact_search | III-Nitride, SiC and diamond materials for electronic devices symposium held April 8 - 12, 1996, San Francisco, California, U.S.A. |
| title_full | III-Nitride, SiC and diamond materials for electronic devices symposium held April 8 - 12, 1996, San Francisco, California, U.S.A. ed.: D. Kurt Gaskill ... |
| title_fullStr | III-Nitride, SiC and diamond materials for electronic devices symposium held April 8 - 12, 1996, San Francisco, California, U.S.A. ed.: D. Kurt Gaskill ... |
| title_full_unstemmed | III-Nitride, SiC and diamond materials for electronic devices symposium held April 8 - 12, 1996, San Francisco, California, U.S.A. ed.: D. Kurt Gaskill ... |
| title_short | III-Nitride, SiC and diamond materials for electronic devices |
| title_sort | iii nitride sic and diamond materials for electronic devices symposium held april 8 12 1996 san francisco california u s a |
| title_sub | symposium held April 8 - 12, 1996, San Francisco, California, U.S.A. |
| topic | Halbleiterwerkstoff (DE-588)4158817-4 gnd |
| topic_facet | Halbleiterwerkstoff Konferenzschrift 1996 San Francisco Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007497813&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
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