Universal relaxation law: a sequel to Dielectric relaxation in solids
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
London
Chelsea Dielectrics Press
1996
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVI, 415 S. Ill., graph. Darst. |
| ISBN: | 0950871125 |
Internformat
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| 245 | 1 | 0 | |a Universal relaxation law |b a sequel to Dielectric relaxation in solids |c A. K. Jonscher |
| 264 | 1 | |a London |b Chelsea Dielectrics Press |c 1996 | |
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Datensatz im Suchindex
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| adam_text | IMAGE 1
A K JONSCHER
FOUNDER OF CHELSEA DIELECTRICS GROUP 1990 WHITEHEAD MEMORIAL LECTURER
UNIVERSAL
RELAXATION LAW A SEQUEL TO DIELECTRIC RELAXATION IN SOIIDS
CHELSEA DIELECTRICS PRESS
LONDON 1996
IMAGE 2
CONTENTS
PREFACE ACKNOWLEDGEMENTS USEFUL PHYSICAL CONSTANTS
XI XV
XVII
CHAPTER 1 THE MEANING OF UNI VERS ALITY 1.1 THE LAST TWELVE YEARS 1
1.2 BASIC DEFINITIONS 6
1.3 EMPIRICAL RESPONSE FUNCTIONS 10
1.4 CALCULATION OF TOTAL POLARISATION 22
1.5 THE NATURE OF UNIVERSALITY 24
1.6 NEGATIVE CAPACITANCE 27
1.7 RECOVERY OF FIELD ON OPEN-CIRCUIT 30
BASIC EQUATIONS: 32
1.8 ENERGY LOSS IN THE TIME DOMAIN 34
1.9 CONCLUDING COMMENTS 38
APPENDIX 1.1 INTEGRATION IN LOGARITHMIC COORDINATES 40
APPENDIX 1.2 VALUES OF N AND CO (MI/2) AI
REFERENCES TO CHAPTER 1 44
CHAPTER 2 DIELECTRIC RESPONSE OF SEMICONDUCTORS 2.1 DELAYED ELECTRONIC
TRANSITIONS 2.2 A SIMPLE BARRIER MODEL
45 50
IMAGE 3
VI
CONTENTS
2.3 RESPONSE OF SCHOTTKY DIODES 58
ADVENTITIOUS BARRIERS ON SEMI-INSULATING MATERIAL 61
2.5 RESPONSE OF P-N JUNCTIONS 62
HIGH-PURITYP-NJUNCTIONS 64
JUNCTIONS WITH DEEP LEVELS 66
HEAVILY DOPED ZENER DIODES 67
CONCLUSIONS REGARDING SPACE CHARGE REGION RESPONSES 69
2.5 JUNCTION DIFFUSION CAPACITANCE 72
A) LOW-FREQUENCY RESPONSE 74
B) HIGH-FREQUENCY RESPONSE 75
2.6 VOLUME TRAPPING-DETRAPPING 77
2.7 HOPPING CONDUCTION 83
ELECTRONIC PROCESSES 83
SEMI-INSULATING GAAS 86
IONIC TRANSPORT 86
2.8 CONCLUDING COMMENTS 88
REFERENCES TO CHAPTER 2 90
CHAPTER 3 LUMINESCENCE AND PHOTOCONDUCTTVTTY 3.1 THE RELEVANCE OF THE
SUBJECT 91
3.2 IDEALISED LIGHT EMISSION RATES 93
3.3 ANALYTICAL FORMULATION 95
THE LIMIT OF RAPID TRAPPING 97
3.4 REVIEW OF LUMINESCENCE DATA 100
EXPONENTIAL DECAYS 101
SIMPLE POWER LAW DECAYS 103
MORE COMPLEX BEHAVIOURS 109
3.5 CONCLUSIONS FROM LUMINESCENCE 111
3.6 PHOTOCONDUCTIVITY IN THE F-D 112
PRINCIPLES OF PHOTOCONDUCTIVE BEHAVIOUR 113
ANALYTICAL FORMULATION 116
3.7 CONCLUSIONS 119
REFERENCES TO CHAPTER 3 121
IMAGE 4
CONTENTS
V LL
CHAPTER 4
FLAT DIELECTRIC RESPONSE 4.1 LOW-LOSS DIELECTRICS 123
4.2 THE CONCEPT OF FLAT LOSS 125
4.3 EXPERIMENTAL EVIDENCE 127
4.5 TRANS-UNIVERSAL RESPONSE 134
4.6 GENERAL CONCLUSIONS 141
REFERENCES TO CHAPTER 4 142
CHAPTER 5 LOW-FREQUENCY DISPERSION 5.1 INTRODUCTION 143
5.2 TYPES OF L FD CHARACTERISTICS 145
FREQUENCY-DOMAIN RESPONSE 145
TIME DOMAIN RESPONSE 148
5.3 EXPERIMENTAL CONDITIONS 150
5.4 VOLUME LFD 152
TD RESPONSE OF ZEOLITES 160
5.5 INTERFACIAL L FD 161
FAST IONIC CONDUCTORS 165
5.6 SURFACE CONDUCTION 167
5.7 GRANULAER MEDIA 177
5.8 FIBROUS HYDROPHYLLIC MATERIALS 185
5.9 BIOLOGICAL SAMPLES 187
5.10 PROPOSED MECHANISMS OF L FD 190
INTERPRETATIONS OFVOLUME LFD 190
FRACTAL INTERFACES 191
INTERPRETATION OF SURFACE LFD 194
5.11 THE ELECTROCHEMICAL MECHANISM 195
5.12 ALTERNATING CURRENT CONDUCTIVITY 198
5.13 DELTA-FUNCTION RESPONSE OF L FD 200
5.14 L FD WITH HOPPING ELECTRONS 202
5.15 CONCLUDING COMMENTS 205
REFERENCES TO CHAPTER 5 209
IMAGE 5
VIII
CONTENTS
CHAPTER 6 DC AND AC CONDUCTTVITY 6.1 STATEMENT OF THE PROBLEM 211
6.2 DIRECT CURRENT CONDUCTIVITY 214
6.3 AMORPHOUS SEMICONDUCTORS 215
6.4 TRANSITION METAL OXIDE GLASSES 217
6.5 TEMPERATURE DEPENDENCE 218
6.6 CONCLUSIONS 221
REFERENCES TO CHAPTER 6 222
CHAPTER 7 CHEMICAL REACTION KTNETICS 7.1 INTRODUCTION 223
7.2 KINETIC EQUATIONS 223
7.3 LOW-TEMPERATURE DATA 226
REFERENCES TO CHAPTER 7 232
CHAPTER 8 THERMALLY STIMULATED DEPOLARISATION 8.1 INTRODUCTION 233
8.2 ANALYTICAL FORMULATION 235
8.3 EVALUATION OF EXPERIMENTAL DATA 240
8.4 THE PHYSICAL SIGNIFICANCE 242
8.5 A FRESH APPROACH TO TSC 245
8.6 T SD IN THE PRESENCE OF LOSS PEAKS 249
8.7 CONCLUSIONS 249
REFERENCES TO CHAPTER 8 250
CHAPTER 9 MECHANICAL RELAXATION 9.1 PRELIMINARY COMMENTS 251
9.2 OUTLINE OF EXPERIMENTAL METHODS 252
9.3 DEFINITIONS OF RELEVANT PARAMETERS 253
9.4 AN OVERVIEW OD DATA 254
9.5 MECHANICAL FLAT LOSS 259
9.6 ELECTRO-MECHANICAL COUPLING 259
FORCE BETWEEN CAPACITOR PLATES 260
REFERENCES TO CHAPTER 9 262
IMAGE 6
CONTENTS
IX
CHAPTER 10
MEASUREMENT A ND PRESENTATION OF DATA 10.1 INTRODUCTION 263
10.2 TIME-DOMAIN INSTRUMENTATION 267
CHARGE EXCITATION IN BATTERY SYSTEMS 275
10.3 FREQUENCY RESPONSE ANALYSERS 276
BANDWIDTH LIMITATION 277
10.4 OTHER USES OF FRAS 281
10.5 PRESENTATION OF DIELECTRIC DATA 282
10.6 IMPEDANCE AND ADMITTANCE PLOTS 284
A SPECIFIC EXAMPLE 289
VECTORIAL ADDITION IN THE COMPLEX PLANE 290
10.7 OTHER REPRESENTATIONS 293
10.8 DATA PROCESSING SOFTWARE 294
FREQUENCY DEPENDENCE 1QA
10.9 NORMALISATION OF DATA 299
APPENDIX 10.1 MORE IMPEDANCE, ADMITTANCE PLOTS 301 THE EFFECT OF C M AND
OF SERIES RESISTANCE ON
IMPEDANCE 301
APPENDIX 10.2 MODULUS REPRESENTATION 305
MODULUS PLOTS FOR RC CIRCUITS 306
REFERENCES TO CHAPTER 10 307
CHAPTER 11 THEORETICALINTERPRETATIONS 11.1 THE NATURE OF THE PROBLEM 308
THERMAL EXCITATION OFDIPOLES AND MOLECULES 319 HOPPING CHARGE CARRIER
SYSTEMS 321
REVERSIBLE AND IRREVERSIBLE PROCESSES 324
11.2 CARRIER-DOMINATED SYSTEMS 325
FUNDAMENTAL RELATIONS 329
FREQUENCY DEPENDENCE OF HOPPING SYSTEMS 331
CONCLUSIONS REGARDING HOPPING CONDUCTION 337
11.3 DIPOLAR RELAXATION 338
THE DISSADO-HILL THEORY 339
11.4 SELF-SIMILARITY,FRACTALITY, SCALING 343
FRACTAL TIME ANDFRACTAL SPACE SYSTEMS 345
IMAGE 7
X CONTENTS
ELECTRIC CIRCUIT EQUIVALENTS 348
FRACTALITY AND FREQUENCY DEPENDENCE 350
11.5 STOCHASTIC APPROACH 351
11.6 CONCLUDING COMMENTS 361
APPENDIX 11.1 FURTHER STOCHASTIC ANALYSIS 366
A SYSTEM OF INDEPENDENT EXPONENTIALLY
RELAXING DIPOLES 366
A SYSTEM OF INTERACTING CLUSTERS 370
REFERENCES TO CHAPTER 11 373
CHAPTER 12 THE ENERGY CRITERION 12.1 INTRODUCTORY COMMENTS 376
12.2 DIELECTRIC RESPONSE OF P-N JUNCTIONS 382
ENERGY STORED IN THE JUNCTION CAPACITOR 383
DISCUSSION OFTHE PHYSICAL SITUATION 383
RELAXATION BELOW THE LOSS PEAK FREQUENCY 386
CONCLUDING COMMENTS 387
12.3 LOW-FREQUENCY DISPERSION 388
INTRODUCTION 388
EMPIRICAL FEATURES OF TD EVIDENCE 388
ENERGY CRITERION FORMALISM 390
DISCUSSION OFLFD RESPONSE 392
12.4 DIPOLAR SCREENING 393
SCREENING BY CHARGED PARTICLES 393
SCREENING BY PHYSICAL DIPOLES 394
NUMERICAL RELATIONS 400
ENERGY OF DIPOLAR ARRANGEMENTS 403
12.5 RELAXATION IN SCREENED SYSTEMS 404
12.6 CONCLUDING COMMENTS 405
REFERENCES TO CHAPTER 12 406
AUTHOR INDEX 407
SUBJECT INDEX 411
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| id | DE-604.BV011099842 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:03:58Z |
| institution | BVB |
| isbn | 0950871125 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007435785 |
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| physical | XVI, 415 S. Ill., graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Chelsea Dielectrics Press |
| record_format | marc |
| spelling | Jonscher, Andrzej Karol Verfasser aut Universal relaxation law a sequel to Dielectric relaxation in solids A. K. Jonscher London Chelsea Dielectrics Press 1996 XVI, 415 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Relaxation (DE-588)4049365-9 gnd rswk-swf Relaxation (DE-588)4049365-9 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007435785&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Jonscher, Andrzej Karol Universal relaxation law a sequel to Dielectric relaxation in solids Relaxation (DE-588)4049365-9 gnd |
| subject_GND | (DE-588)4049365-9 |
| title | Universal relaxation law a sequel to Dielectric relaxation in solids |
| title_auth | Universal relaxation law a sequel to Dielectric relaxation in solids |
| title_exact_search | Universal relaxation law a sequel to Dielectric relaxation in solids |
| title_full | Universal relaxation law a sequel to Dielectric relaxation in solids A. K. Jonscher |
| title_fullStr | Universal relaxation law a sequel to Dielectric relaxation in solids A. K. Jonscher |
| title_full_unstemmed | Universal relaxation law a sequel to Dielectric relaxation in solids A. K. Jonscher |
| title_short | Universal relaxation law |
| title_sort | universal relaxation law a sequel to dielectric relaxation in solids |
| title_sub | a sequel to Dielectric relaxation in solids |
| topic | Relaxation (DE-588)4049365-9 gnd |
| topic_facet | Relaxation |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007435785&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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