Semiconductor characterization: present status and future needs
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Woodbury, NY
AIP Press
1996
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIX, 729 S. zahlr. Ill., graph. Darst. |
| ISBN: | 1563965038 |
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| adam_text | SEMICONDUCTOR CHARACTERIZATION PRESENT STATUS AND FUTURE NEEDS EDITORS
W. M. BULLIS MATERIALS & METROLOGY, SUNNYVALE, CA 94087 D. G. SEILER
NIST, GAITHERSBURG, MD 20899 A. C. DIEBOLD SEMATECH, AUSTIN, TX 78741
AIP PRESS AMERICAN INSTITUTE OF PHYSICS WOODBURY, NEW YORK CONTENTS
FOREWORD V PREFACE XVII ACKNOWLEDGEMENTS XIX BUSINESS AND MANUFACTURING
MOTIVATIONS FOR THE DEVELOPMENT OF ANALYTICAL TECHNOLOGY AND METROLOGY
FOR SEMICONDUCTORS 1 T. J. SHAFFNER, *. * DIEBOLD, R. * MCDONALD, D. G.
SEILER, AND W. M. BULLIS DRIVERS FOR SILICON PROCESS DEVELOPMENT AND
MANUFACTURING PHYSICAL LIMITS ON GIGASCALE INTEGRATION (GSI) 13 JAMES D.
MEINDL CIRCUITS, TRANSISTORS, PROCESSING, AND MATERIALS FOR 0.1 -MICRON
CMOS TECHNOLOGY 19 Y.G. WEY, J. WEIS, *. F. LEE, D. MONROE, F. H.
BAUMANN, E. H. WESTERWICK, AND R. H. YAN METROLOGY REQUIREMENTS FOR
BEYOND 0.35-** GEOMETRIES CRITICAL METROLOGY AND ANALYTICAL TECHNOLOGY
BASED ON THE PROCESS AND MATERIALS REQUIREMENTS OF THE 1994 NATIONAL
TECHNOLOGY ROADMAP FOR SEMICONDUCTORS 25 ALAIN * DIEBOLD COST BENEFIT OF
PROCESS METROLOGY 42 DON ROSE FLEXIBLE MANUFACTURING/CLUSTER TOOLS FOR
SEMICONDUCTOR MANUFACTURING 46 ZACHARY J. LEMNIOS IN-SITU SENSORS FOR
MONITORING & CONTROL OF PROCESSES & PRODUCT PARAMETERS 52 JIMMY W. HOSCH
COST OF OWNERSHIP ANALYSIS FOR METROLOGY TOOLS 61 DAREN L. DANCE VII
SILICON WAFERS, GATE DIELECTRICS, AND PROCESS SIMULATION SILICON
MATERIALS AND METROLOGY: CRITICAL CONCEPTS FOR OPTIMAL 1* PERFORMANCE IN
THE GIGABIT ERA 67 HOWARD R. HUFF AND RANDAL K. GOODALL MICRODEFECT
ANALYSIS OF SILICON: TOOLS AND STRATEGIES 97 LIONEL * KIMERLING, JUERGEN
MICHEL, H. M SAAD, AND GERD J. NORGA DEFECT ENGINEERING DIAGNOSTIC
OPTIONS FOR SOI, MEV IMPLANTS, AND 300 MM WAFERS 103 GEORGE A. ROZGONYI
SILICON SURFACE PREPARATION AND WAFER CLEANING: ROLE, STATUS, AND NEEDS
FOR ADVANCED CHARACTERIZATION 110 * R. HELMS SPECIFICATION OF LIQUID
CHEMICAL PURITY REQUIREMENTS: THE BCNOWNS, UNKNOWNS, AND NEED FOR
TECHNOLOGY DEVELOPMENT 118 H. G PARKS GATE DIELECTRICS FOR HIGH
PERFORMANCE ULSI: PRACTICAL AND FUNDAMENTAL LIMITS 123 L. MANCHANDA TCAD
STATUS AND FUTURE PROSPECTS 131 DONALD L. SCHARFETTER COMPUTATIONAL
PHYSICS FOR MICROELECTRONICS * THE OLD AND THE NEW CHALLENGES 141
SOKRATES T. PANTELIDES INTERCONNECTS AND FAILURE ANALYSIS INTERCONNECTS
AND CONTACTS: ISSUES AND STRATEGIES 153 ROBERT S. BLEWER INTERCONNECT
RELIABILITY AND STRESS 164 WALTER L. BROWN BACK-END SIMULATION: ETCHING
AND DEPOSITION 173 F. H. BAUMANN METROLOGY AND PROCESS CONTROL ISSUES IN
CHEMICAL MECHANICAL POLISHING 181 RAHUL JAIRATH AND LUCIA MARKERT
FAILURE ANALYSIS: STATUS AND FUTURE TRENDS 187 RICHARD E. ANDERSON,
JERRY M. SODEN, AND CHRISTOPHER L. HENDERSON VIII CMOS 1* LAYERS:
COMPLETE SET OF THERMAL CONDUCTIVITIES 197 0. PAUL, M. VON ARX, AND H.
BALTES THE IMPACT OF ACOUSTIC MICROSCOPY ON THE DEVELOPMENT OF ADVANCED
1* PACKAGES 202 *. *. MOORE CRITICAL ANALYTICAL METHODS ELECTRICAL
METHODS ELECTRICAL CHARACTERIZATION OF MATERIALS AND DEVICES 215 DIETER
K. SCHRODER LIFETIME MEASUREMENTS FOR ROUTINE QC/QA OF SOI WAFERS 227 J.
L. FREEOUF AND N. BRASLAU APPLICATION OF THE SURFACE PHOTO VOLTAGE AND
CONTACT POTENTIAL DIFFERENCE FOR IN-LINE MONITORING OF 1* PROCESSES 231
K. NAUKA IMPROVEMENT OF ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY
FOR DEEP LEVEL MEASUREMENT INCLUDING INTERFACE TRAP 237 H. YOSHIDA, H.
NIU, T. MATSUDA, AND S. KISHINO CONTAMINATION FREE MANUFACTURING
OPTIMIZATION OF WAFER SURFACE PARTICLE POSITION MAP PRIOR TO VIEWING
WITH AN ELECTRON MICROSCOPE 243 MAN PING CAI, YURI URITSKY, AND PATRICK
D. KINNEY EVALUATING AUTOMATED WAFER MEASUREMENT INSTRUMENTS 248 STEVEN
A. EASTMAN GAS CONTAMINATION MONITORING FOR SEMICONDUCTOR PROCESSING 252
CHARLES R. TILFORD LIQUID-BOME SUB-MICRON PARTICLE DETECTION THROUGH
ACOUSTIC COAXING 256 SAMEER I. MADANSHETTY X-RAY METHODS X-RAY
SCATTERING FOR SEMICONDUCTOR CHARACTERIZATION B. K. TANNER 263 SILICON
WAFER SURFACE TRACE IMPURITY ANALYSIS USING SYNCHROTRON RADIATION 273 S.
S. LADERMAN, A. FISCHER-COLBRIE, A. SHIMAZAKI, K. MIYAZAKI, S. BRENNAN,
N. TAKAURA, P. PIANETTA, AND J. KORTRIGHT IX CHARACTERIZATION OF DEFECTS
IN SILICON CARBIDE SINGLE CRYSTALS BY SYNCHROTRON X-RAY TOPOGRAPHY 278
SHAOPING WANG, MICHAEL DUDLEY, WEI HUANG, CALVIN H. CARTER, JR., VALERI
F. TSVETKOV, AND * FAZI DEPTH-DEPENDENT NON-DESTRUCTIVE ANALYSIS OF THE
OXIDE SURFACE OF INP(LOO) USING GRAZING INCIDENCE X-RAY PHOTOEMISSION
283 TERRENCE JACH, STEPHEN THURGATE, AND TERENCEO LACUESTA CALIBRATION
OF BINDING-ENERGY SCALES OF X-RAY PHOTOELECTRON SPECTROMETERS 287 * J.
POWELL SCANNING PROBE MICROSCOPIES SEMICONDUCTOR CHARACTERIZATION WITH
SCANNING PROBE MICROSCOPIES 295 R. M. FEENSTRA AND J. E. GRIFFITH
SCANNING CAPACITANCE MICROSCOPY MEASUREMENTS AND MODELING FOR DOPANT
PROFILING OF SILICON 308 JOSEPH J. KOPANSKI, JAY F. MARCHIANDO, AND
JEREMIAH R. LOWNEY PROGRESS TOWARD ACCURATE METROLOGY USING ATOMIC FORCE
MICROSCOPY 313 T. MCWAID, J. SCHNEIR, J. S. VILLARRUBIA, R. DIXSON, AND
V. W. TSAI 2D-SCANNING CAPACITANCE MICROSCOPY MEASUREMENTS OF
CROSS-SECTIONED VLSI TESTSTRUCTURES 318 GABI NEUBAUER, ANDREW ERICKSON,
CLAYTON * WILLIAMS, JOSEPH J. KOPANSKI, MARK RODGERS, AND DENNIS
ADDERTON CARRIER PROFILE DETERMINATION IN DEVICE STRUCTURES USING
AFM-BASED METHODS 322 W. VANDERVORST, P. DE WOLF, T. CLARYSSE, T.
TRENKLER, L. HELLEMANS, J. SNAUWAERT, AND V. RAINERI NUCLEAR METHODS
NEUTRON ACTIVATION FOR SEMICONDUCTOR MATERIALS CHARACTERIZATION 329 S. *
MCGUIRE, T. Z. HOSSAIN, ALBERT J. FILO, CRAIG * SWANSON, AND JAMES P.
LAVINE INTERNATIONAL INTERCOMPARISON FOR TRACE ELEMENTS IN SILICON
SEMICONDUCTOR WAFERS BY NEUTRON ACTIVATION ANALYSIS 335 D. A. BECKER, R.
M. LINDSTROM, AND T. Z. HOSSAIN APPLICATIONS OF COLD NEUTRON PROMPT
GAMMA ACTIVATION ANALYSIS TO CHARACTERIZATION OF SEMICONDUCTORS 342 RICK
L. PAUL AND RICHARD M. LINDSTROM NONDESTRUCTIVE CHARACTERIZATION OF
SEMICONDUCTOR MATERIALS USING NEUTRON DEPTH PROFILING 346 R. G. DOWNING
AND G. P. LAMAZE X BORON ANALYSIS IN SYNTHETIC DIAMOND FILMS USING COLD
NEUTRON DEPTH PROFILING 351 G. P. LAMAZE AND R. G. DOWNING ELECTRON AND
ION BEAM TECHNIQUES (INCLUDING SIMS) TRANSMISSION ELECTRON MICROSCOPY IN
VLSI: STRENGTHS AND LIMITATIONS 359 YOUNG O. KIM ION BEAM
CHARACTERIZATION OF SEMICONDUCTORS 366 J. MARK ANTHONY TRACE
NANOANALYSIS BY ANALYTICAL ELECTRON MICROSCOPY/ELECTRON ENERGY LOSS
SPECTROMETRY: ACHIEVING HIGH SPATIAL RESOLUTION AND HIGH SENSITIVITY
ANALYSIS 377 DALE E. NEWBURY THE DEVELOPMENT OF STANDARD REFERENCE
MATERIAL 2137 - A BORON IMPLANT IN SILICON STANDARD FOR SECONDARY ION
MASS SPECTROMETRY 382 D. S. SIMONS, P. H. CHI, R. G. DOWNING, AND G. F.
LAMAZE QUANTITATIVE 3-DIMENSIONAL IMAGE DEPTH PROFILING BY SECONDARY ION
MASS SPECTROMETRY 383 GREG GILLEN NEW APPLICATIONS OF QUADRUPOLE-BASED
SECONDARY ION MASS SPECTROMETRY (SIMS) IN MICROELECTRONICS 387 STEPHEN
W. NOVAK, MICHAEL R. FROST, AND CHARLES W. MAGEE THE DEPTH MEASUREMENT
OF CRATERS PRODUCED BY SECONDARY ION MASS SPECTROMETRY - RESULTS OF A
STYLUS PROFILOMETRY ROUND-ROBIN STUDY 392 DAVID S. SIMONS OPTICAL AND
INFRARED TECHNIQUES APPLICATIONS OF NEAR-FIELD SCANNING OPTICAL
MICROSCOPY 395 HARALD F. HESS AND ERIC BETZIG SCATTEROMETRY: PRINCIPLES,
APPLICATIONS, LIMITATIONS, AND FUTURE PROSPECTS 399 JOHN * STOVER
SPECTRORADIOMETERS FOR DEEP ULTRAVIOLET LITHOGRAPHY 413 J. M. BRIDGES,
J. E. HARDIS, * L. CROMER, AND J. R. ROBERTS INFRARED MICROSPECTROSCOPY
OF SEMICONDUCTORS AT THE DIFFRACTION-LIMIT 418 G. L. CARR, D. DIMARZIO,
M. B. LEE, AND D. J. LARSON, JR. OPTICAL CHARACTERIZATION OF MATERIALS
AND DEVICES FOR THE SEMICONDUCTOR INDUSTRY: TRENDS AND NEEDS 422 S.
PERKOWITZ, D. G. SEILER, AND W. M. BULLIS XI CHARACTERIZATION OF SIGE/GE
HETEROSTRUCTURES AND GRADED LAYERS USING VARIABLE ANGLE SPECTROSCOPIC
ELLIPSOMETRY 428 A. R. HEYD, S. A. ALTEROVITZ, E. T. CROKE, K. L. WANG,
AND *. *. LEE ELLIPSOMETRIC CHARACTERIZATION OF THIN OXIDES ON SILICON
433 WILLIAM A. MCGAHAN AND JOHN A. WOOLLAM HIGH-ACCURACY PRINCIPAL-ANGLE
SCANNING SPECTROSCOPIC ELLIPSOMETRY OF SEMICONDUCTOR INTERFACES 438 N.
V. NGUYEN, D. CHANDLER-HOROWITZ, J. G. PELLEGRINO, AND P. M. AMIRTHARAJ
CHEMICAL METHODS APPLICATION OF ICP-MS FOR RELATING METAL CONTAMINATION
ON WAFERS TO METAL SOURCES AND LEVELS 445 MARJORIE K. BALAZS AND JAENOS
FUCSKO ULTRA-SENSITIVE METHODS FOR MICROCONTAMINATION ANALYSIS IN
SEMICONDUCTOR PROCESS LIQUIDS AND ON SURFACES 450 P. GUPTA, Z.
POURMOTAMED, S. H. TAN, AND R. MCDONALD IN SITU, REAL TIME DIAGNOSIS,
ANALYSIS, AND CONTROL IN-SITU PROCESS CONTROL FOR SEMICONDUCTOR
TECHNOLOGY: A CONTRAST BETWEEN RESEARCH AND FACTORY PERSPECTIVES, OR
OBSERVATIONS OF RESEARCHER WHO HAS SEEN THE LIGHT... AT DAWN ... DRIVING
THE INTERSTATE TO AN OUT-OF-STATE FACTORY (PLENARY LECTURE) 459 JOHN *
BEAN REAL-TIME SPECTRAL ELLIPSOMETRY APPLIED TO SEMICONDUCTOR THIN FILM
DIAGNOSTICS 467 W. M. DUNCAN, M. J. BEVAN, AND S. A. HENCK REAL TIME
ANALYSIS AND CONTROL OF EPITAXIAL GROWTH 476 GEORGE N. MARACAS AND *. *.
KUO COST EFFECTIVENESS IN REAL-TIME, IN-SITU ANALYSIS FOR DEPOSITION
EQUIPMENT 485 NORMAN E. SCHUMAKER METROLOGY, SENSORS, AND PROCESS
CONTROL: APPLICATION TO REACTIVE ION ETCH 491 ANION MAX HURWITZ AND
JAMES R. MOYNE (EDS) IMPROVED GAS FLOW MEASUREMENTS FOR NEXT-GENERATION
PROCESSES 497 STUART A. TISON APPLICATION OF THE RAMAN MICROPROBE TO
IDENTIFICATION OF ORGANIC CONTAMINANTS AND TO IN-SITU MEASURE OF
STRESSES 502 FRAN ADAR AND HOWARD SCHAFFER REAL-TIME MONITORING AND
CONTROL OF RESONANT-TUNNELING DIODE GROWTH USING SPECTROSCOPIC
ELLIPSOMETRY 507 F. G. CELII, Y.-C. KAO, T. S. MOISE, A. J. KATZ, T. B.
HARTON, M. WOOLSEY, AND B. JOHS XII ENERGY DISPERSIVE X-RAY REFLECTIVITY
CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES AND INTERFACES 512 E.
CHASON, T. M. MAYER, Z. MATUTINOVIC KRSTELJ, AND J. * STURM REAL TIME
SPECTROELLIPSOMETRY CHARACTERIZATION OF THE FABRICATION OF AMORPHOUS
SILICON SOLAR CELLS 517 R. W. COLLINS, YIWEI LU, SANGBO KIM, AND * R.
WRONSKI PERFORMANCE CAPABILITIES OF REFLECTOMETERS AND ELLIPSOMETERS FOR
COMPOSITIONAL ANALYSIS DURING ALGA,_ X AS EPITAXY 522 W. GILMORE III, D.
E. ASPNES, AND *. *. LEE IN SITU PYROMETRIC INTERFEROMETRY MONITORING
AND CONTROL OF III-V LAYERED STRUCTURES DURING MBE GROWTH: MODELING AND
IMPLEMENTATION 527 D. L. SATO, X. LIU, Y. LI, A. R. STUBBERUD, H. P.
LEE, AND J. M. KUO IN-SITU MONITORING OF HETEROEPITAXIAL GROWTH
PROCESSES USING REAL-TIME SPECTROSCOPIC ELLIPSOMETRY AND LASER LIGHT
SCATTERING 532 * PICKERING, R. T. CARLINE, D. A. O. HOPE, AND D. J.
ROBBINS REAL TIME DIAGNOSTICS OF SEMICONDUCTOR SURFACE MODIFICATIONS BY
REFLECTANCE ANISOTROPY SPECTROSCOPY 537 J.-T. ZETTLER, W. RICHTER, *.
PLOSKA, M. ZORN, J. RUMSBURG, *. MEYNE, AND M. PRISTOVSEK REAL-TIME
MEASUREMENT OF FILM THICKNESS, COMPOSITION, AND TEMPERATURE BY FT-IR
EMISSION AND REFLECTION SPECTROSCOPY 544 P. R. SOLOMON, SHAOHUA LIU,
PETER A. ROSENTHAL, AND STUART FARQUHARSON IN-SITU NEUTRON REFLECTIVITY
OF MBE GROWN AND CHEMICALLY PROCESSED SURFACES AND INTERFACES 549 J. A.
DURA AND * F. MAJKRZAK FRONTIERS IN COMPOUND SEMICONDUCTORS FRONTIERS IN
COMPOUND SEMICONDUCTORS: BANDGAP ENGINEERING AND NOVEL STRUCTURES 557 *.
* MCGILL, D. A. COLLINS, M. W. WANG, J. F. SWENBERG, AND R. W. GRANT
MEASUREMENT NEEDS AND CRITICAL DRIVERS FOR FUTURE HIGH-SPEED DEVICES 566
HERB GORONKIN AND J. R. TUCKER ROLE OF DIAGNOSTICS, CHARACTERIZATION,
AND MODELING IN IR DETECTOR TECHNOLOGY DEVELOPMENT: HGCDTE - A PARADIGM
572 W. E. TENNANT CRITICAL MATERIALS ISSUES FOR PERFORMANCE IMPROVEMENT
OF GAAS-BASED ANALOG DEVICES 578 JAMES M. BALLINGALL MAGNETOLUMINESCENCE
CHARACTERIZATION OF QUANTUM WELL STRUCTURES 591 E. D. JONES AND S. R.
KURTZ XIII GAAS/SI OPTOELECTRONIC DESIGN AND DEVELOPMENT AT HIROSHIMA
UNIVERSITY 599 S. YOKOYAMA, K. MIYAKE, T. NAGATA, H. SAKAUE, S.
MIYAZAKI, Y. HORIIKE, A. IWATA, T. AE, M. KOYANAGI, AND M. HIROSE RAPID
NON-DESTRUCTIVE SCANNING OF COMPOUND SEMICONDUCTOR WAFERS AND EPITAXIAL
LAYERS 605 CARLA J. MINER MINORITY AND MAJORITY CARRIER TRANSPORT
CHARACTERIZATION IN COMPOUND SEMICONDUCTORS 615 MICHAEL L. LOVEJOY ROOM
TEMPERATURE PHOTOLUMINESCENCE CHARACTERIZATION OF HEMT QUANTUM WELL
STRUCTURES 629 STEVEN K. BRIERLEY, AND HENRY T. HENDRIKS USE OF PRESSURE
FOR QUANTUM-WELL BAND-STRUCTURE CHARACTERIZATION 634 J. H. BURNETT, P.
M. AMIRTHARAJ, H. M. CHEONG, W. PAUL, E. S. KOTELES, AND B. ELMAN
DOUBLE-MODULATION AND SELECTIVE EXCITATION PHOTOREFLECTANCE FOR
WAFER-LEVEL CHARACTERIZATION OF QUANTUM-WELL LASER STRUCTURES 639 D.
CHANDLER-HOROWITZ, D. W. BERNING, J. G. PELLEGRINO, J. H. BURNETT, P. M.
AMIRTHARAJ, D. P. BOUR, AND D. W. TREAT OPTICAL CHARACTERIZATION OF
MBE-GROWN GAAS-ALGAAS SUPERLATTICES FOR INFRARED DETECTORS 644 Z. *
FENG, S. PERKOWITZ, J. CEN, K. K. BAJAJ, D. K. KINELL, AND R. L. WHITNEY
IDENTIFICATION OF SHALLOW ACCEPTORS IN GAAS USING TIME-DELAYED
PHOTOLUMINESCENCE SPECTROSCOPY 649 A. M. GILINSKY AND K. S. ZHURAVLEV
ATOMIC FORCE MICROSCOPY AS A PROCESS CHARACTERIZATION TOOL FOR
GAAS-BASED INTEGRATED CIRCUIT FABRICATION 654 A. J. HOWARD, A. G. BACA,
R. J. SHUL, J. * ZOLPER, M. E. SHERWIN, AND D. J. RIEGER INFRARED
TRANSMISSION TOPOGRAPHY: APPLICATION TO NONDESTRUCTIVE MEASUREMENT OF
DISLOCATION DENSITY AND CARRIER CONCENTRATION IN SILICON-DOPED GALLIUM
ARSENIDE WAFERS 659 M. G. MIER, D. * LOOK, J. R. SIZELOVE, D. * WALTERS,
AND D. L. BEASLEY NEW DIRECT RF PARAMETER EXTRACTION TECHNIQUE FOR
HETEROJUNCTION BIPOLAR TRANSISTORS USING AN EXTENDED EQUIVALENT CIRCUIT
664 D. PETERS, W. DAUMANN, W. BROCKERHOFF, R. REUTER, E. KOENIG, AND F.
J. TEGUDE CONTACTLESS ROOM TEMPERATURE ANALYSIS OF HETEROJ UNCTION
BIPOLAR TRANSISTOR WAFER STRUCTURES USING PHOTOREFLECTANCE 669 FRED H.
POLLAK, WOJCIECH KRYSTEK, M. LEIBOVITCH, H. QIANG, DWIGHT * STREIT, AND
MICHAEL WOJTOWICZ XIV NOVEL MAGNETIC FIELD CHARACTERIZATION TECHNIQUES
FOR COMPOUND SEMICONDUCTOR MATERIALS AND DEVICES 673 * A. RICHTER, D. G.
SEILER, J. G. PELLEGRINO, W. F. TSENG, AND W. R. THURBER NONDESTRUCTIVE
CHARACTERIZATION OF GAAS-BASED MULTILAYER EPITAXIAL STRUCTURES 678
PATRICIA B. SMITH, ANDREW A. ALLERMAN, AND WALTER M. DUNCAN
ELECTROCHEMICAL CAPACITANCE-VOLTAGE, MAGNETO-HALL AND THEORETICAL
ANALYSIS OF HETEROSTRUCTURE TRANSISTOR MATERIAL 683 * E. STUTZ, *.
JOGAI, AND D. * LOOK ATOMIC SCALE CHARACTERIZATION OF INGAAS/GAAS/SI
HETEROSTRUCTURE BY HRTEM, ATOMISTIC MODELING AND MULTISLICE IMAGE
SIMULATION 688 T. ZHELEVA, M. ICHIMURA, S. OKTYABRSKY, AND J. NARAYAN
EXTRACTION OF DYNAMICAL CHARACTERISTICS OF 2-D ELECTRON GAS IN
HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS 693 ROBERTO SUNG, JAU-WEN CHEN,
AND MUKUNDA B. DAS APPENDICES APPENDIX 1 PANEL DISCUSSIONS MEETING THE
METROLOGY REQUIREMENTS OF THE NATIONAL TECHNOLOGY ROADMAP FOR
SEMICONDUCTORS 701 CHOOSING THE PROPER INSTRUMENTS - BENCHMARKING, COST
OF OWNERSHIP, STANDARDIZATION 703 IN-SITU MEASUREMENTS - PROMISE AND
BARRIERS 705 APPENDIX 2: RUMP SESSION- ROADMAPPING SYNCHROTRON X-RAY
METROLOGY 707 APPENDIX 3: AFTER DINNER REMARKS - HISTORICAL PERSPECTIVE
ON SEMICONDUCTOR CHARACTERIZATION 709 AUTHOR INDEX 719 SUBJECT INDEX 72
3 XV
|
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| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| genre | (DE-588)4143413-4 Aufsatzsammlung gnd-content (DE-588)1071861417 Konferenzschrift 1995 gnd-content |
| genre_facet | Aufsatzsammlung Konferenzschrift 1995 |
| id | DE-604.BV011056041 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:03:15Z |
| institution | BVB |
| isbn | 1563965038 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007403904 |
| oclc_num | 33209304 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR DE-703 DE-11 |
| owner_facet | DE-355 DE-BY-UBR DE-703 DE-11 |
| physical | XIX, 729 S. zahlr. Ill., graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | AIP Press |
| record_format | marc |
| spelling | Semiconductor characterization present status and future needs eds. W. M. Bullis ... Woodbury, NY AIP Press 1996 XIX, 729 S. zahlr. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Semiconductors Characterization Congresses Semiconductors Design and construction Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Charakterisierung (DE-588)4069926-2 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content (DE-588)1071861417 Konferenzschrift 1995 gnd-content Halbleiter (DE-588)4022993-2 s Charakterisierung (DE-588)4069926-2 s DE-604 Bullis, W. M. Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007403904&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Semiconductor characterization present status and future needs Semiconductors Characterization Congresses Semiconductors Design and construction Congresses Halbleiter (DE-588)4022993-2 gnd Charakterisierung (DE-588)4069926-2 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4069926-2 (DE-588)4143413-4 (DE-588)1071861417 |
| title | Semiconductor characterization present status and future needs |
| title_auth | Semiconductor characterization present status and future needs |
| title_exact_search | Semiconductor characterization present status and future needs |
| title_full | Semiconductor characterization present status and future needs eds. W. M. Bullis ... |
| title_fullStr | Semiconductor characterization present status and future needs eds. W. M. Bullis ... |
| title_full_unstemmed | Semiconductor characterization present status and future needs eds. W. M. Bullis ... |
| title_short | Semiconductor characterization |
| title_sort | semiconductor characterization present status and future needs |
| title_sub | present status and future needs |
| topic | Semiconductors Characterization Congresses Semiconductors Design and construction Congresses Halbleiter (DE-588)4022993-2 gnd Charakterisierung (DE-588)4069926-2 gnd |
| topic_facet | Semiconductors Characterization Congresses Semiconductors Design and construction Congresses Halbleiter Charakterisierung Aufsatzsammlung Konferenzschrift 1995 |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007403904&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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