Characterization of diffusion assisted growth of III-V compounds:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
Aachen
Verl. der Augustinus-Buchh.
1995
|
| Ausgabe: | 1. Aufl. |
| Schriftenreihe: | Aachener Beiträge zur Physik der kondensierten Materie
17 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Zugl.: Aachen, Techn. Hochsch., Diss., 1995 |
| Beschreibung: | 114 S. Ill., graph. Darst. |
| ISBN: | 3860732765 |
Internformat
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| 100 | 1 | |a Wagner, Veit |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Characterization of diffusion assisted growth of III-V compounds |c vorgelegt von Veit Wagner |
| 250 | |a 1. Aufl. | ||
| 264 | 1 | |a Aachen |b Verl. der Augustinus-Buchh. |c 1995 | |
| 300 | |a 114 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Aachener Beiträge zur Physik der kondensierten Materie |v 17 | |
| 500 | |a Zugl.: Aachen, Techn. Hochsch., Diss., 1995 | ||
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Datensatz im Suchindex
| _version_ | 1807773856551665664 |
|---|---|
| adam_text |
CONTENTS
1
INTRODUCTION
7
2
DIFFUSION
ASSISTED
GROWTH
9
2.1
PRINCIPLES
.
9
2.2
GROWTH
THEORY
FOR
REACTIVE
INTERFACES
.
10
2.2.1
MICROSCOPIC
MODEL
.
10
2.2.2
MACROSCOPIC
MODEL
.
12
2.2.3
GROWTH
KINETICS
WITHIN
THE
MACROSCOPIC
MODEL
.
13
2.2.4
TEMPERATURE
RAMP
INDUCED
GROWTH
KINETICS
.
14
2.3
GROWTH
WITH
ABRUPT
INTERFACES
.
16
3
MATERIALS
19
3.1
SUBSTRATE
MATERIALS:
ANTIMONY
AND
BISMUTH
.
19
3.2
GROUP
III
MATERIALS:
ALUMINIUM,
GALLIUM
AND
INDIUM
.
23
3.2.1
ALUMINIUM
.
23
3.2.2
GALLIUM
.
25
3.2.3
INDIUM
.
27
3.3
ANTIMONY
COMPOUNDS
.
27
3.4
BISMUTH
COMPOUNDS
.
30
4
EXPERIMENTAL
METHODS
33
4.1
RAMAN
SPECTROSCOPY
(RS)
.
33
4.1.1
ALIGNMENT
MODULATED
RAMAN
SCATTERING
(AMORS)
.
34
4.2
LOW
ENERGY
ELECTRON
DIFFRACTION
(LEED)
.
35
4.3
AUGER
ELECTRON
SPECTROSCOPY
(AES)
.
36
5
EXPERIMENTAL
SET-UPS
39
5.1
ONLINE
IN-SITU
RAMAN
SET-UP
(TU-BERLIN)
.
39
5.2
ELECTRON
ANALYSIS
AND
MBE
SET-UP
(FUNDP-NAMUR)
.
40
5.3
EX-SITU
RAMAN
SET-UP
(RWTH-AACHEN)
.
42
6
GROWTH
ON
ANTIMONY
SUBSTRATES
45
6.1
ROOM
TEMPERATURE
DEPOSITION
OF
AL,
GA
AND
IN
.
46
2
CONTENTS
6.1.1
EXPERIMENT
.
46
6.1.2
III-V
COMPOUND
IDENTIFICATION
.
48
6.1.3
GROWTH
MODE
.
48
6.2
THRESHOLD
TEMPERATURE
FOR
THE
REACTION
.
49
6.2.1
EXPERIMENT
.
49
6.2.2
RESULTS
AND
DISCUSSION
.
51
6.3
APPLICATION
OF
THE
TEMPERATURE
RAMP
MODEL
TO
INSB
.
54
6.4
GROWTH
OPTIMIZATION
FOR
GALLIUM
DEPOSITION
.
55
6.4.1
IN-PLANE
ORIENTATION
OF
THE
GROWN
LAYER
.
56
7
GROWTH
ON
BISMUTH
SUBSTRATES
59
7.1
ALUMINIUM
DEPOSITION
.
60
7.1.1
ALUMINIUM
FACETS
.
60
7.2
GALLIUM
DEPOSITION
.
66
7.2.1
EPITAXIAL
OT-GALLIUM
FILMS
.
66
7.2.2
POLYCRYSTALLINE
A-GALLIUM
FILMS
.
71
7.2.3
SIMULATED
RAMAN
INTENSITIES
FOR
GA/BI(LLL)
.
71
7.2.4
DISCUSSION
OF
THE
GA
T-POINT
PHONON
MODES
.
72
7.3
INDIUM
DEPOSITION
.
75
7.3.1
ROOM
TEMPERATURE
DEPOSITION
.
75
7.3.2
DEPOSITION
AT
LOWER
TEMPERATURES
.
77
8
CONCLUSIONS
79
APPENDICES
A
RAMAN
INTERFERENCE
81
A.L
INTENSITY
OF
SUBSTRATE
SIGNALS
.
82
A.2
INTENSITY
OF
FILM
SIGNALS
.
84
B
LEED
FROM
FACETED
SURFACES
85
B.L
MODEL
OF
TUCKER
.
85
B.2
EXTENDED
MODEL
.
86
B.3
FITTING
PROCEDURE
.
88
C
CALCULATED
DEPOSITION
RATES
89
C.L
GENERAL
TREATMENT
.
89
C.2
DEPOSITION
EQUATIONS
FOR
AL,
GA
AND
IN
.
90
D
SIMPLE
FORCE
CONSTANT
MODEL
FOR
A-GA
95
D.L
POTENTIAL
OF
THE
SIMPLE
FORCE
CONSTANT
MODEL
.
95
D.2
EQUATION
OF
MOTION
.
96
D.3
PHONON
FREQUENCIES
.
97
CONTENTS
3
E
RAMAN
TENSOR
OF
GALLIUM
99
E.L
SYMMETRY
OPERATIONS
.
99
E.2
GROUP
THEORETICAL
ANALYSIS
.
101
E.3
NOMENCLATURE
OF
WAEBER
.
102
E.4
EIGENVECTORS
.
102 |
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| discipline | Physik |
| edition | 1. Aufl. |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV010804515 |
| illustrated | Illustrated |
| indexdate | 2024-08-19T00:31:36Z |
| institution | BVB |
| isbn | 3860732765 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007218011 |
| oclc_num | 75673289 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-11 |
| physical | 114 S. Ill., graph. Darst. |
| publishDate | 1995 |
| publishDateSearch | 1995 |
| publishDateSort | 1995 |
| publisher | Verl. der Augustinus-Buchh. |
| record_format | marc |
| series | Aachener Beiträge zur Physik der kondensierten Materie |
| series2 | Aachener Beiträge zur Physik der kondensierten Materie |
| spelling | Wagner, Veit Verfasser aut Characterization of diffusion assisted growth of III-V compounds vorgelegt von Veit Wagner 1. Aufl. Aachen Verl. der Augustinus-Buchh. 1995 114 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Aachener Beiträge zur Physik der kondensierten Materie 17 Zugl.: Aachen, Techn. Hochsch., Diss., 1995 Interdiffusion (DE-588)4275083-0 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Schichtwachstum (DE-588)4273432-0 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Drei-Fünf-Halbleiter (DE-588)4150649-2 s Molekularstrahlepitaxie (DE-588)4170399-6 s Schichtwachstum (DE-588)4273432-0 s Interdiffusion (DE-588)4275083-0 s DE-604 Aachener Beiträge zur Physik der kondensierten Materie 17 (DE-604)BV005721719 17 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007218011&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Wagner, Veit Characterization of diffusion assisted growth of III-V compounds Aachener Beiträge zur Physik der kondensierten Materie Interdiffusion (DE-588)4275083-0 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Schichtwachstum (DE-588)4273432-0 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| subject_GND | (DE-588)4275083-0 (DE-588)4150649-2 (DE-588)4273432-0 (DE-588)4170399-6 (DE-588)4113937-9 |
| title | Characterization of diffusion assisted growth of III-V compounds |
| title_auth | Characterization of diffusion assisted growth of III-V compounds |
| title_exact_search | Characterization of diffusion assisted growth of III-V compounds |
| title_full | Characterization of diffusion assisted growth of III-V compounds vorgelegt von Veit Wagner |
| title_fullStr | Characterization of diffusion assisted growth of III-V compounds vorgelegt von Veit Wagner |
| title_full_unstemmed | Characterization of diffusion assisted growth of III-V compounds vorgelegt von Veit Wagner |
| title_short | Characterization of diffusion assisted growth of III-V compounds |
| title_sort | characterization of diffusion assisted growth of iii v compounds |
| topic | Interdiffusion (DE-588)4275083-0 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Schichtwachstum (DE-588)4273432-0 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| topic_facet | Interdiffusion Drei-Fünf-Halbleiter Schichtwachstum Molekularstrahlepitaxie Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007218011&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV005721719 |
| work_keys_str_mv | AT wagnerveit characterizationofdiffusionassistedgrowthofiiivcompounds |