Porous silicon and related materials: proceedings of Symposium F on Porous Silicon and Related Materials of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994
Saved in:
| Format: | Conference Proceeding Book |
|---|---|
| Language: | English |
| Published: |
Amsterdam [u.a.]
Elsevier
1995
|
| Series: | European Materials Research Society: European Materials Research Society symposia proceedings
51 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Aus: Thin solid films ; 255,1-2 |
| Physical Description: | XII, 342 S. Ill., graph. Darst. |
| ISBN: | 0444821376 |
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| 245 | 1 | 0 | |a Porous silicon and related materials |b proceedings of Symposium F on Porous Silicon and Related Materials of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994 |c ed. R. Hérino ... |
| 264 | 1 | |a Amsterdam [u.a.] |b Elsevier |c 1995 | |
| 300 | |a XII, 342 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a European Materials Research Society: European Materials Research Society symposia proceedings |v 51 | |
| 500 | |a Aus: Thin solid films ; 255,1-2 | ||
| 650 | 7 | |a Matériaux poreux - Congrès |2 ram | |
| 650 | 7 | |a Silicium - Congrès |2 ram | |
| 650 | 4 | |a Luminescence |v Congresses | |
| 650 | 4 | |a Porous silicon |v Congresses | |
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 4 | |a Thin films |x Optical properties |v Congresses | |
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| 711 | 2 | |a Symposium Porous Silicon and Related Materials |d 1994 |c Straßburg |j Sonstige |0 (DE-588)3025969-1 |4 oth | |
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Record in the Search Index
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| adam_text | ELSE VIER
Volume
255.
Numbers
1 2. 15
January
1995
Contents
Preface
..
Sponsors
.
Porous Silicon: Preparation
The physics of macroporous silicon formation
.................................................................. 1
V.
Lehmann (München,
Germany)
Influence of the formation conditions on the
microstructure
of porous silicon layers studied by
spectroscopie eilipsometry
5
U. Rossow, U. Frotscher (Berlin, Germany), M.
Thönissen,
M. G. Berger, S. Frohnoff, H.
Münder (Julien,
Germany)
and W.
Richter
(Berlin,
Germany)
Preparation of porous silicon films by laser ablation
............................................................. 9
R. Laiho and A. Pavlov (Turku, Finland)
Electrical and Transport Properties of Porous Silicon
The electrical properties of porous silicon produced from n+ silicon substrates
...................................... 12
A. J. Simons, T. I. Cox, M. J.
Uren
and P. D. J. Calcott (Great Malvern, UK)
Post-treatment effects on electrical conduction in porous silicon
................................................... 16
F. Möller,
M.
Ben Chorin and F. Koch (Garching,
Germany)
Resistivity of porous silicon: a surface effect
.................................................................... 20
V.
Lehmann, F.
Hofmann
(Munich, Germany),
F. Möller
and
U.
Grüning (Garching,
Germany)
Photocarrier
grating technique in mesoporous silicon
............................................................ 23
R.
Schwarz,
F. Wang, M.
Ben-Chorin,
S.
Grebner,
A.
Nikolov and F. Koch (Garching,
Germany)
Luminescence Mechanisms I
Theoretical descriptions of porous silicon
...................................................................... 27
C. Delerue, M. Lannoo, G. Allan and E. Martin (Lille, France)
On the origin of the porous silicon luminescence
................................................................ 35
J. Zeman,
M. Zigone, G.
Martinez (Grenoble, France),
G. L.
J. A.
Rikken
(Eindhoven, Netherlands), P.
Bordet
and
J. Chenavas (Grenoble, France)
The influence of the spatial structure on the electronic properties of porous silicon: quantum chemical study
........... 39
J. L. Gavartin,
С. С.
Matthai
and I. Morrison (Cardiff, UK)
Electroluminescence
Electroluminescence from n+-type porous silicon contacted with layer-by-layer deposited polyaniline
.................. 43
A. Bsiesy (Saint Martin
d Hères,
France), Y.
F. Nicolau,
A. Ermolierf (Grenoble, France), F.
Muller
and
F. Gaspard
(Saint Martin
d Hères,
France)
Electroluminescence from porous silicon metal deposition into the pores
........................................... 49
P.
Steiner, F.
Kozlowski and W. Lang
(
Munich, Germany)
Porous Silicon Applications
Micromachining applications of porous silicon
.................................................................. 52
P.
Steiner
and W. Lang (Munich. Germany)
Formation techniques for porous silicon superlattices
............................................................ 59
St. Frohnhoff,
M. G. Berger, M.
Thönissen,
С.
Dieker.
L.
Vescan,
H.
Münder
and H.
Lüth (Jülich,
Germany)
Elsevier
Science
S.A.
VI
Electrodeposition
of metals into porous silicon
................................................................. 63
M. Jeske. J. W. Schultze
(Düsseldorf,
Germany),
M
Thönissen
and
H.
Münder (Jülich,
Germany)
Dynamics
of the Porous Silicon
Photoluminescence
Recombination dynamics in porous silicon
..................................................................... 67
P. Lorenzo. M. Ceschini
(Trento.
Italy) and
H. E.
Roman (Hamburg, Germany)
Free-carrier absorption and luminescence decay of porous silicon
................................................. 70
V. Grivickas and J. Linnros
(Kista-Stockholm,
Sweden)
Relaxation mechanisms of electronic excitation in nanostructures of porous silicon
.................................. 74
Th. Dittrich (Berlin. Germany). P. K. Kashkarov, E.
A. Konstantinova
and V. Yu. Timoshenko (Moscow, Russian
Federation)
Picosecond dynamics of photoexited carriers in free standing porous silicon
........................................ 77
F. Trojánek,
P.
Malý. I.
Pelant, A.
Hospodková, V. Kohlová
and J.
Valenta
(Prague, Czech Republic)
Luminescence Mechanisms II
Voltage-induced modifications of porous silicon luminescence
..................................................... 80
A. Bsiesy,
F. Gaspard.
R. Herino. M.
Ligeon. F. Muller,
R. Romestain and J. C. Vial
(Saint
Martin
d Hères, France)
In situ
luminescence
and
IR
study of porous silicon during and after anodic oxidation
.............................. 87
V. M.
Dubin,
F. Ozanam
and
J.-N. Chazalviel (Palaiseau,
France)
On the possible origin of the
photoluminescence
from oxidised nanocrystalline silicon
............................... 92
H. Tamura. M.
Rückschloss,
T.
Wirschem and S.
Vepřek
(Munich, Germany)
Other Light Emitting Structures
Growth and luminescence of
η
-type
porous polycrystalline silicon
................................................. 96
P. Joubert, A. Abouliatim, P. Guyader, D. Briand, B. Lambert and M. Guendouz (Lannion, France)
Photoluminescence
from anodized and thermally oxidized porous germanium
....................................... 99
S.
Miyazaki.
К.
Sakamoto,
К.
Shiba and M. Hirose (Hiroshima, Japan)
Luminescence of spark-processed materials
..................................................................... 103
M. H.
Ludwig.
R.
E.
Hummel and
M.
Stora
(Gainesville,
FL,
USA)
Luminescence
enhancement by electrochemical etching of SiC(6H)
................................................ 107
V. Petrova-Koch (Garching, Germany), O.
Sreseli
(St. Petersburg, Russian Federation), G.
Polisski (Garching,
Germany), D. Kovalev (St. Petersburg, Russian Federation), T. Muschik and F. Koch (Garching, Germany)
Porous Silicon Characterization
Modulated
photothermal
reflectance on porous silicon
...........................................................
Ill
G.
Amato,
L.
Boarino.
G.
Benedetto and R.
Spagnolo
(Torino, Italy)
Characterization of supercritically dried porous silicon
........................................................... 115
St. Frohnhoff, R. Arens-Fischer
(Jülich.
Germany).
T. Heinrich,
J. Fricke
(Würzburg,
Germany), M. Arntzen and
W. Theiss (Aachen. Germany)
Investigations of porous Si grains by optical spectroscopy
........................................................ 119
S. Guha (Washington. DC, USA). P.
Steiner. F.
Kozlowski and W. Lang (Munich, Germany)
Analysis of the surfaces structure in porous Si
.................................................................. 123
M. Schoisswohl, H. J.
von Bardeleben.
V. Morazzani, A. Grosman. C.
Ortega (Paris, France), St. Frohnhoff,
M. G.
Berger
and H.
Münder (Jülich,
Germany)
Structural study of porous silicon
............................................................................. 128
S. C
Bayliss. D. A. Hutt. Q. Zhang. P. Harris,
N.
J. Phillips (Leicester, UK) and A. Smith (Warrington, UK)
Variations in the lattice parameter of porous silicon produced by wetting and vapour adsorption
..................... 132
G.
Dolino
and D.
Bellet
(Saint Martin
d Hères,
France)
Capillary and Van
der Waals
forces and mechanical stability of porous silicon
..................................... 135
U.
Grüning
and A. Yelon (Montreal.
Que..
Canada)
Anisotropie
and polarization effects in Raman scattering in porous silicon
......................................... 139
I. Gregora
(Prague, Czech Republic), B. Champagnon. L. Saviot and
Y. Monin (Villeurbanne,
France)
vu
Photoluminescence Characterization
Slow luminescence
from trapped
charges
in oxidized porous silicon
............................................... 143
A.
Kux,
D. Kovalev and
F. Koch (Garching.
Germany)
Optical second-harmonic generation studies of the structure of porous silicon surfaces
............................... 146
M. Cavanagh, J. R. Power, J. F. McGilp (Dublin, Ireland), H.
Münder
and
M. Ci. Berger (Julien.
Germany)
Influence of the oxidation process on the luminescence of HF-treated porous silicon
................................ 149
Th. Dittrich, H. Flietner (Berlin. Germany), V. Yu. Timoshenko and P. K. Kashkarov (Moscow. Russian Federation)
Porous Silicon and Related Materials (Poster Session)
Porous silicon obtained by anodization in the transition regime
................................................... 152
M. Bertolotti, F. Carassiti, E. Fazio, A. Ferrari, S. La Monica. S. Lazarouk.
Ci.
Liakhou. G.
Muidlo.
H.
Proverbio
and
L.
Schironc (Roma,
Italy)
Acoustic microscopy investigation of porous silicon
............................................................. 155
R. J. M. Da
Fonseca,
J. M. Saurel. A. Foucaran.
E. Massone,
T.
Taliercio and J. Camassel
(Montpellier.
France)
Electron powder ribbon polycrystalline silicon plates used for porous layers fabrication
.............................. 159
Y. Kolic, R. Gauthier, M.
A. Garcia Perez, A. Sibai, J. C. Dupuy, P.
Pinard (Villeurbanne,
France),
R. M Ghaieth
and
H. Maaref (Monastir, Tunisia)
Defects in luminescent and non-luminescent porous Si
........................................................... 163
M. Schoisswohl, H. J.
von Bardeleben
(Paris, France), V. Bratus (Kiev, Ukraine) and H.
Münder (Jülich,
Germany)
The correlation between structural and optical properties of luminescent porous silicon
.............................. 167
S.
Gardelis,
U.
Bangert
and
В.
Hamilton (Manchester, UK)
Positron lifetime spectroscopy of
η
-type
and p-type porous silicon
................................................ 171
S. Dannefaer (Winnipeg, MB, Canada), T. Bretagnon, A. Foucaran, T. Taliercio
(Montpellier,
France) and D. Kerr
(Winnipeg, MB, Canada)
Structural and elastic properties of porous silicon
............................................................... 174
C. С.
Matthai,
J. L. Gavartin
(Cardiff, UK)
and A. A. Cafolla (Dublin,
Ireland)
Connecting microscopic and macroscopic properties of porous media: choosing appropriate effective medium concepts
. . 177
W.
Theiß,
S.
Henkel
and
M.
Arntzen (Aachen. Germany)
Depth profiling of porous silicon layers by attenuated total reflection spectroscopy
.................................. 181
W.
Theiß,
M.
Wernke and V. Offermann (Aachen, Germany)
Excitation mechanism of porous silicon luminescence: the role of sensitizers
........................................ 185
I. A. Buyanova,
N.
E. Korsunskaya, A. U. Savchuk, M. K. Sheinkman (Kiev, Ukraine) and H. J.
von Bardeleben
(Paris, France)
Simultaneous microphotoluminescence and micro-Raman scattering in porous silicon
................................ 188
Y. Monin, L. Saviot, B. Champagnon,
С
Esnouf (Villeurbanne,
France) and A. Halimaout (Meylan, France)
Correlation between the
photoluminescence
and chemical bonding in porous silicon
................................. 191
D. Dimova-Malinovska, M. Sendova-Vassileva, Ts. Marinova, V. Krastev, M.
Kamenova
and
N.
Tzenov (Sofia,
Bulgaria)
Optical and electrical properties of porous silicon and stain-etched films
........................................... 196
E. V. Astrová, S. V. Belov, A. A. Lebedev,
Α.
D.
Remenjuk
and Yu. V.
Rud
(St. Petersburg, Russian Federation)
Fourier transform
IR
monitoring of porous silicon passivation during post-treatments such as anodic oxidation and contact
with organic solvents
........................................................................................ 200
M. A. Hory, R.
Hérino, M.
Ligeon, F. Muller, F.
Gespard,
I. Mihalcescu and J. C. Vial (Saint Martin D^Heres, France)
Time and temperature evolution of light emission from porous silicon prepared from
p
and p* substrates
............ 204
G.
Amato
(Turin, Italy), G.
Di Francia
and P. Menna (Naples, Italy)
Low-temperature fatigue of
photoluminescence
in aged porous silicon
............................................. 208
V. Grivickas, J. Linnros and J. A. Tellefsen (Kista-Stockholm, Sweden)
Anomalous luminescence degradation behaviour of chemically oxidized porous silicon
............................... 212
R. Czaputa, R. Fritzl and A. Popitsch
(Graz,
Austria)
Temperature dependence of radiative and non-radiative transitions in porous silicon
................................. 216
T. Tsuboi (Kyoto, Japan), R. Laiho and A. Pavlov (Turku. Finland)
Vlil
Comparison of anodically etched porous silicon with spark-processed silicon
....................................... 219
R. E. Hummel. M.
Ludwig.
S.-S. Chang and G. LaTorre (Gainesville, FL, USA)
Influence of rapid thermal oxidation on differently prepared porous silicon
......................................... 224
W. Lang. P.
Steiner. F.
Kozlowski and P.
Ramm
(Munich, Germany)
Natural oxidation of annealed chemically etched porous silicon
................................................... 228
N.
Hadj Zoubir, M. Vergnat
(
Vandœuvre-lès-Nancy,
France), T. Delatour, A. Burneau
(Villers-lès-
Nancy, France),
Ph.
de Donato
and
О.
Barrés (Vandœuvre-lès-Nancy, France)
Homogeneous chemical etching of sandblasted silicon substrates
.................................................. 231
M. Vergnat,
N.
Hadj Zoubir and A. Burneau
(Vandœuvre-lès-Nancy,
France)
Urbach edges in light-emitting porous silicon and related materials
................................................ 234
E. Bustarret (Grenoble. France), M.
Ligeon.
I. Mihalcescu (Saint Martin
d Hères,
France) and J. Oswald (Prague,
Czech Republic)
Influence of molecule adsorption on porous silicon
photoluminescence
............................................. 238
Th.
Dittrich (Berlin. Germany), E.
A. Konstantinova
and V. Yu. Timoshenko (Moscow, Russian Federation)
Correlation between the luminescence and Raman peaks in quantum-confined systems
............................... 214
P.
Déak. Z.
Hajnal
(Budapest, Hungary),
M.
Stutzmann (München,
Germany)
and H. D.
Fuchs (Stuttgart,
Germany)
The relation between the visible and the infrared luminescence bands in porous silicon. Comparison with amorphous Si
alloys
...................................................................................................... 246
V. Petrova-Koch and T. Muschik (Garching, Germany)
Resonantly excited
photoluminescence
in porous silicon
.......................................................... 250
M.
Rosenbauer.
D. H.
Leach (Stuttgart, Germany), M. Sendonva-Vassileva (Sofia, Bulgaria), S. Finkbeiner (Stuttgart,
Germany) and M.
Stutzmann
(Garching, Germany)
Interpretation of the temperature dependence of the strong visible
photoluminescence
in porous silicon
................ 254
S. Finkbeiner and J. Weber (Stuttgart, Germany)
Electrical behaviour of aluminium-porous silicon junctions
...................................................... 258
D. Deresmes. V. Marissael, D. Stievenard (Lille, France) and C. Ortega (Paris, France)
A lateral injection porous silicon device structure for light-emitting diodes
......................................... 262
С. С.
Yeh.
C. H. Lee. H. L.
Hwang
and K. Y. J.
Hsu (Hsinchu, Taiwan)
Investigation of electrical properties of Au/porous Si/Si structures
................................................. 266
M.
Ádám.
Zs. J.
Horváth.
I.
Bársony
(Budapest, Hungary), L.
Szölgyémy
(Eldoret, Kenya),
E. Vázsonyi
and V. V.
Tuyen (Budapest, Hungary)
Photoconductivity study of self-supporting porous silicon
........................................................ 269
R. Sedlačík, F.
Karel,
J.
Oswald,
A.
Fejfar,
I.
Pelant
and
J. Kočka
(Prague, Czech Republic)
Influence of humidity on transport in porous silicon
............................................................. 272
J. J.
Mareš.
J.
Krištofik
and
E. Hulicius (Praha,
Czech Republic)
Electronic properties and Schottky barrier of porous silicon-
Au
interface
.......................................... 276
R. Laiho and A. Pavlov (Turku. Finland)
Luminescence of porous multicry
stalline Si,
_t Gev alloys
........................................................ 279
Y. Kolic. E. Borne, M. A. Garcia Perez. A. Sibai,
R. Gauthier
and A.
Laugier
(Villeurbanne,
France)
Structural and luminescence studies of stain-etched and electrochemically etched germanium
.......................... 282
M. Sendova-Vassileva.
N.
Tzenov. D. Dimova-Malinovska (Sofia, Bulgaria), M.
Rosenbauer
(Stuttgart, Germany),
M.
Stutzmann
(Garching. Germany) and K. V. Josepovits (Budapest, Hungary)
Luminescence from a Si SiO, nanocluster-like structure prepared by laser ablation
................................. 286
L. A. Movtchan. R. W. Dreyfus. W. Marine,
M. Sentis, M. Autric, G. Le
Lay (Marseille, France) and
N. Merk
(Lausanne, Switzerland)
Low temperature UV oxidation of SiGe for preparation of Ge nanocrystals in SiO2
................................. 290
V.
Crăciun
(London, UK), A. H. Reader
(
Crolles, France), D. E. W. Vandenhoudt (Eindhoven, Netherlands), S. Best,
R. S. Hutton (London. UK), A. Andrei
(Piteşti,
Romania) and I. W. Boyd (London, UK)
Light emission from recrystallized amorphous Si MQW structures
................................................ 295
E. F. Steigmeier, D.
Grützmacher,
H.
Auderset,
R.
Morf,
B. Delley
and R. Wessicken (Zurich, Switzerland)
Photoluminescent
properties of porous films of tantalum suicides
................................................. 298
V. P. Parkhutik and J. M. Martinez-Duart (Madrid, Spain)
Light-emitting Si prepared by laser annealing of a-Si:H
.......................................................... 302
K. M.
A. El-Kader,
I. Ulrych,
V. Cháb, J.
Oswald, P.
Kubát,
P.
Engst,
J.
Stuchlík, A. Fcjfar, R. Černý.
I.
Pelant
and
J. Kočka
(Prague, Czech Republic)
Luminescence properties of plasma-treated silicon surfaces
....................................................... 305
D.
Rüter,
S.
Rolf,
W.
Bauhofer
(Hamburg, Germany),
P. J.
Klar and
D. Wolverson
(Norwich. UK)
Realization of porous silicon membranes for gas sensor applications
.............................................. 310
T. Taliercio
(Montpellier,
France), M. Dilhan (Blagnac, France),
E. Massone
(Montpellier,
France),
A. M. Gué
(Toulouse, France), B. Fraisse and A. Foucaran
(Montpellier, France)
Investigation and design of optical properties of porosity superlattices
............................................. 313
M. G. Berger, M.
Thönissen,
R. Arens-Fischer, H.
Münder,
H.
Lüth (Jülich,
Germany),
M.
Arntzen and W.
Theiß
(Aachen
Germany)
Deposition of electrically conducting polybithiophene into porous silicon
........................................... 317
K. G. Jung, J. W. Schultze
(Düsseldorf,
Germany), M.
Thönissen
and H.
Münder (Jülich,
Germany)
P
wells made of porous silicon for power devices: determination of the formation steps
.............................. 321
P.
Déhu,
A. Senes
(Nanterre, France) and F. Miserey (Paris, France)
Photocurrent collection in porous semiconductor structures
....................................................... 325
M. C. Rossi, R. Vincenzoni (Rome, Italy) and F. Galluzzi (Messina, Italy)
Sub-micrometre luminescent porous silicon structures using lithographically patterned substrates
...................... 329
A. G. Nassiopoulos, S. Grigoropoulos (Demokritos, Greece), L. Canham (Malvern, UK), A. Halimaoui (Grenoble,
France), I. Berbezier (Marseille, France), E. Gogolodos and D. Papadimitriou (Athens, Greece)
Author Index
.............................................................................................. 335
Subject Index
.............................................................................................. 337
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV010480301 |
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| dewey-full | 620.1/93 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 620 - Engineering and allied operations |
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| dewey-search | 620.1/93 |
| dewey-sort | 3620.1 293 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Werkstoffwissenschaften Elektrotechnik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1994 Straßburg gnd-content |
| genre_facet | Konferenzschrift 1994 Straßburg |
| id | DE-604.BV010480301 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:53:13Z |
| institution | BVB |
| institution_GND | (DE-588)3025969-1 |
| isbn | 0444821376 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006983665 |
| oclc_num | 33104641 |
| open_access_boolean | |
| owner | DE-384 DE-91 DE-BY-TUM |
| owner_facet | DE-384 DE-91 DE-BY-TUM |
| physical | XII, 342 S. Ill., graph. Darst. |
| publishDate | 1995 |
| publishDateSearch | 1995 |
| publishDateSort | 1995 |
| publisher | Elsevier |
| record_format | marc |
| series | European Materials Research Society: European Materials Research Society symposia proceedings |
| series2 | European Materials Research Society: European Materials Research Society symposia proceedings |
| spelling | Porous silicon and related materials proceedings of Symposium F on Porous Silicon and Related Materials of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994 ed. R. Hérino ... Amsterdam [u.a.] Elsevier 1995 XII, 342 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier European Materials Research Society: European Materials Research Society symposia proceedings 51 Aus: Thin solid films ; 255,1-2 Matériaux poreux - Congrès ram Silicium - Congrès ram Luminescence Congresses Porous silicon Congresses Semiconductors Congresses Thin films Optical properties Congresses Poröser Stoff (DE-588)4046811-2 gnd rswk-swf Nanostrukturiertes Material (DE-588)4342626-8 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1994 Straßburg gnd-content Silicium (DE-588)4077445-4 s Nanostrukturiertes Material (DE-588)4342626-8 s DE-604 Poröser Stoff (DE-588)4046811-2 s Hérino, R. Sonstige oth Symposium Porous Silicon and Related Materials 1994 Straßburg Sonstige (DE-588)3025969-1 oth European Materials Research Society: European Materials Research Society symposia proceedings 51 (DE-604)BV004201591 51 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006983665&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Porous silicon and related materials proceedings of Symposium F on Porous Silicon and Related Materials of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994 European Materials Research Society: European Materials Research Society symposia proceedings Matériaux poreux - Congrès ram Silicium - Congrès ram Luminescence Congresses Porous silicon Congresses Semiconductors Congresses Thin films Optical properties Congresses Poröser Stoff (DE-588)4046811-2 gnd Nanostrukturiertes Material (DE-588)4342626-8 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4046811-2 (DE-588)4342626-8 (DE-588)4077445-4 (DE-588)1071861417 |
| title | Porous silicon and related materials proceedings of Symposium F on Porous Silicon and Related Materials of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994 |
| title_auth | Porous silicon and related materials proceedings of Symposium F on Porous Silicon and Related Materials of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994 |
| title_exact_search | Porous silicon and related materials proceedings of Symposium F on Porous Silicon and Related Materials of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994 |
| title_full | Porous silicon and related materials proceedings of Symposium F on Porous Silicon and Related Materials of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994 ed. R. Hérino ... |
| title_fullStr | Porous silicon and related materials proceedings of Symposium F on Porous Silicon and Related Materials of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994 ed. R. Hérino ... |
| title_full_unstemmed | Porous silicon and related materials proceedings of Symposium F on Porous Silicon and Related Materials of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994 ed. R. Hérino ... |
| title_short | Porous silicon and related materials |
| title_sort | porous silicon and related materials proceedings of symposium f on porous silicon and related materials of the 1994 e mrs spring conference strasbourg france may 24 27 1994 |
| title_sub | proceedings of Symposium F on Porous Silicon and Related Materials of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994 |
| topic | Matériaux poreux - Congrès ram Silicium - Congrès ram Luminescence Congresses Porous silicon Congresses Semiconductors Congresses Thin films Optical properties Congresses Poröser Stoff (DE-588)4046811-2 gnd Nanostrukturiertes Material (DE-588)4342626-8 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Matériaux poreux - Congrès Silicium - Congrès Luminescence Congresses Porous silicon Congresses Semiconductors Congresses Thin films Optical properties Congresses Poröser Stoff Nanostrukturiertes Material Silicium Konferenzschrift 1994 Straßburg |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006983665&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV004201591 |
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