Ionensensitive Feldeffekttransistoren: Halbleitertechnologie, Entwurf und Verifikation
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | Undetermined |
| Published: |
1994
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| Subjects: | |
| Item Description: | München, Techn. Univ., Diss., 1994 |
| Physical Description: | 225 S. Ill., graph. Darst. |
Staff View
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| 100 | 1 | |a Hein, Peter |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Ionensensitive Feldeffekttransistoren |b Halbleitertechnologie, Entwurf und Verifikation |c von Peter Hein |
| 264 | 1 | |c 1994 | |
| 300 | |a 225 S. |b Ill., graph. Darst. | ||
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| 337 | |b n |2 rdamedia | ||
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| 500 | |a München, Techn. Univ., Diss., 1994 | ||
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| 689 | 0 | 0 | |a Ionensensitiver Feldeffekttransistor |0 (DE-588)4226245-8 |D s |
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Record in the Search Index
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|---|---|
| any_adam_object | |
| author | Hein, Peter |
| author_facet | Hein, Peter |
| author_role | aut |
| author_sort | Hein, Peter |
| author_variant | p h ph |
| building | Verbundindex |
| bvnumber | BV010226278 |
| classification_tum | CHE 221f PHY 855d CHE 221d |
| ctrlnum | (OCoLC)632626957 (DE-599)BVBBV010226278 |
| discipline | Physik Biologie Chemie |
| format | Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV010226278 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:48:50Z |
| institution | BVB |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006797111 |
| oclc_num | 632626957 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | 225 S. Ill., graph. Darst. |
| publishDate | 1994 |
| publishDateSearch | 1994 |
| publishDateSort | 1994 |
| record_format | marc |
| spelling | Hein, Peter Verfasser aut Ionensensitive Feldeffekttransistoren Halbleitertechnologie, Entwurf und Verifikation von Peter Hein 1994 225 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss., 1994 CMOS (DE-588)4010319-5 gnd rswk-swf Ionensensitiver Feldeffekttransistor (DE-588)4226245-8 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Ionensensitiver Feldeffekttransistor (DE-588)4226245-8 s CMOS (DE-588)4010319-5 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Hein, Peter Ionensensitive Feldeffekttransistoren Halbleitertechnologie, Entwurf und Verifikation CMOS (DE-588)4010319-5 gnd Ionensensitiver Feldeffekttransistor (DE-588)4226245-8 gnd |
| subject_GND | (DE-588)4010319-5 (DE-588)4226245-8 (DE-588)4113937-9 |
| title | Ionensensitive Feldeffekttransistoren Halbleitertechnologie, Entwurf und Verifikation |
| title_auth | Ionensensitive Feldeffekttransistoren Halbleitertechnologie, Entwurf und Verifikation |
| title_exact_search | Ionensensitive Feldeffekttransistoren Halbleitertechnologie, Entwurf und Verifikation |
| title_full | Ionensensitive Feldeffekttransistoren Halbleitertechnologie, Entwurf und Verifikation von Peter Hein |
| title_fullStr | Ionensensitive Feldeffekttransistoren Halbleitertechnologie, Entwurf und Verifikation von Peter Hein |
| title_full_unstemmed | Ionensensitive Feldeffekttransistoren Halbleitertechnologie, Entwurf und Verifikation von Peter Hein |
| title_short | Ionensensitive Feldeffekttransistoren |
| title_sort | ionensensitive feldeffekttransistoren halbleitertechnologie entwurf und verifikation |
| title_sub | Halbleitertechnologie, Entwurf und Verifikation |
| topic | CMOS (DE-588)4010319-5 gnd Ionensensitiver Feldeffekttransistor (DE-588)4226245-8 gnd |
| topic_facet | CMOS Ionensensitiver Feldeffekttransistor Hochschulschrift |
| work_keys_str_mv | AT heinpeter ionensensitivefeldeffekttransistorenhalbleitertechnologieentwurfundverifikation |