Electrochemistry at semiconductor and oxidized metal electrodes:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
New York [u.a.]
Plenum Press
1984
|
| Edition: | 2. print. |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XIV, 401 S. graph. Darst. |
| ISBN: | 0306405245 |
Staff View
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Record in the Search Index
| _version_ | 1804124331346755584 |
|---|---|
| adam_text | ELECTROCHEMISTRY AT SEMICONDUCTOR AND OXIDIZED METAL ELECTRODES S. ROY
MORRISON SRI INTERNATIONAL (FORMERLY STANFORD RESEARCH INSTITUTE) MENLO
PARK, CALIFORNIA PLENUM PRESS NEW YORK AND LONDON CONTENTS NOTATION XI
1. THE SOLID AND THE SOLUTION 1 1.1. THE SOLID 1 1.1.1. DONORS,
ACCEPTORS, AND TRAPS I 1.1.2. ENERGY LEVELS AT THE SURFACE 11 1.1.3.
CONDUCTANCE IN SOLIDS 16 1.2. THE SOLUTION 18 1.2.1. INTRODUCTION 18
1.2.2. THE ELECTRODE FERMI ENERGY AS A FUNCTION OF THE REDOX COUPLES IN
SOLUTION 24 1.2.3. THE RELATION BETWEEN THE HYDROGEN AND THE VACUUM
SCALES OF ENERGY 29 1.2.4. FLUCTUATING ENERGY LEVELS IN SOLUTION 31
1.2.5. THE ENERGY LEVELS ASSOCIATED WITH TWO-EQUIVALENT IONS 44 1.2.6.
CONDUCTANCE IN LIQUIDS 47 2. THE SOLID/LIQUID INTERFACE 49 2.1. SURFACE
IONS AND THEIR ENERGY LEVELS 49 2.1.1. ADSORPTION 49 2.1.2. SURFACE
STATES AT THE SOLID/LIQUID INTERFACE 54 2.2. DOUBLE LAYERS AT THE
SOLID/LIQUID INTERFACE 56 2.2.1. GENERAL 56 2.2.2. THE GOUY LAYER 59
2.2.3. THE HELMHOLTZ DOUBLE LAYER 60 2.2.4. THE SPACE CHARGE DOUBLE
LAYER IN THE SEMICONDUCTOR . 65 2.3. THEORETICAL PREDICTIONS OF THE
ENERGY LEVELS OF BAND EDGES . . 72 2.4. THE BAND MODEL OF THE
SOLID/SOLUTION INTERFACE 75 3. THEORY OF ELECTRON AND HOLE TRANSFER 79
3.1. INTRODUCTION 79 VUE VIII CONTENTS 3.1.1. GENERAL 79 3.1.2. THE
ACTIVATION ENERGY IN ELECTRODE REACTIONS . . . . 80 3.2. CLASSICAL MODEL
83 3.3. THE ENERGY LEVEL MODEL OF CHARGE TRANSFER 88 3.3.1. GENERAL 88
3.3.2. THE METAL ELECTRODE 90 3.3.3. THE SEMICONDUCTOR ELECTRODE 93 3.4.
QUALITATIVE DESCRIPTION OF ELECTRODE PROCESSES USING THE BAND MODEL 107
3.4.1. THE BEHAVIOR OF THE METAL ELECTRODE 107 3.4.2. THE BEHAVIOR OF
THE SEMICONDUCTOR ELECTRODE . . . . 110 3.4.3. THE TRANSITION BETWEEN
SEMICONDUCTOR AND METALLIC BEHAVIOR 113 4. MEASUREMENT TECHNIQUES 119
4.1. CAPACITY MEASUREMENTS 120 4.1.1. INTRODUCTION 120 4.1.2.
MEASUREMENT THEORY 121 4.1.3. ANALYSIS 126 4.1.4. COMPLEX MOTT-SCHOTTKY
PLOTS 133 4.1.5. DETERMINATION OF BAND EDGES 137 4.2. MEASUREMENTS OF
THE CURRENT/VOLTAGE CHARACTERISTICS . . . . 138 4.2.1. GENERAL
TECHNIQUES; VOLTAMMETRY 138 4.2.2. ROTATING ELECTRODES 142 4.2.3.
ILLUMINATION 144 4.3. OTHER TECHNIQUES 146 4.3.1. TECHNIQUES FOR V S
MEASUREMENT 146 4.3.2. TECHNIQUES TO DETERMINE SURFACE SPECIES OR PHASES
. . 148 4.3.3. TECHNIQUES TO STUDY ELECTRODE REACTIONS 149 5. THE
PROPERTIES OF THE ELECTRODE AND THEIR EFFECT ON ELECTROCHEMICAL
MEASUREMENTS 153 5.1. THE BEHAVIOR OF THE PERFECT CRYSTAL 154 5.1.1. THE
HELMHOLTZ DOUBLE LAYER: THE SURFACE CHARGES ON THE ELECTRODE 154 5.1.2.
THE SPACE CHARGE REGION OF THE PERFECT CRYSTAL . . . 161 5.2. THE
BEHAVIOR OF ELECTRODE DEFECTS 164 5.2.1. INTRODUCTION 164 5.2.2.
DEVIATIONS OF MOTT-SCHOTTKY PLOTS DUE TO BULK FLAWS . 166 5.2.3. CURRENT
FLOW ASSOCIATED WITH BULK FLAWS 177 5.3. OBSERVED FIAT BAND POTENTIALS
FOR VARIOUS SEMICONDUCTORS . . 186 6. OBSERVATIONS OF CHARGE TRANSFER AT
AN INERT SEMICONDUCTOR ELECTRODE 189 6.1. INTRODUCTION 189 6.2. MAJORITY
CARRIER CAPTURE 192 CONTENTS IX 6.2.1. DIRECT CARRIER TRANSFER TO IONS
IN SOLUTION 193 6.2.2. INDIRECT ELECTRON TRANSFER TO IONS IN SOLUTION .
. . . 200 6.3. MINORITY CARRIER CAPTURE 208 6.3.1. MINORITY CARRIER
CAPTURE ON TWO-EQUIVALENT SPECIES: RADICAL FORMATION AND CURRENT
DOUBLING 209 6.3.2. MINORITY CARRIER CAPTURE BY ONE-EQUIVALENT IONS . .
. 220 6.3.3. PHOTOCATALYSIS 222 6.4. INTRINSIC SURFACE STATES AND
RECOMBINATION CENTERS . . . . 227 6.4.1. INTRINSIC SURFACE STATES AS
CARRIER TRANSFER CENTERS . . 229 6.4.2. INTRINSIC SURFACE STATES AND
IONS IN SOLUTION AS RECOMBINATION CENTERS 233 6.5. CARRIER INJECTION 238
6.5.1. DIRECT ELECTRON AND HOLE INJECTION 238 6.5.2. INJECTION BY
TUNNELING 243 6.5.3. INJECTION BY OPTICALLY EXCITED IONS: DYE INJECTION
. . . 246 6.6. HIGH-CURRENT, HIGH-VOLTAGE PROCESSES 249 6.6.1.
INTRODUCTION 249 6.6.2. HIGH CURRENTS WITH ACCUMULATION LAYERS 251
6.6.3. TUNNELING AND BREAKDOWN ON NON-TRANSITION-METAL SEMICONDUCTORS
253 6.6.4. PRACTICAL ELECTRODES 254 6.7. ANALYSIS OF COMPLICATED
ELECTRODE REACTIONS USING THE TOOLS OF SEMICONDUCTOR ELECTROCHEMISTRY
256 6.7.1. THE PHOTOCATALYTIC OXIDATION OF FORMIC ACID . . . . 257
6.7.2. ANALYSIS OFTHE ENERGY LEVELS OF TWO-EQUIVALENT SPECIES 259 6.7.3.
THE REDUCTION OF IODINE ON CDS 261 7. CHEMICAL TRANSFORMATION IN THE
ELECTRODE REACTION . . . 263 7.1. INTRODUCTION 263 7.2. INNER SPHERE
CHANGES DURING REDOX REACTIONS AT AN INERT ELECTRODE 265 7.3. ADSORPTION
ONTO AND ABSORPTION INTO THE ELECTRODE 270 7.3.1. ADSORPTION OF WATER,
HYDROGEN, AND OXYGEN . . . . 271 7.3.2. ADSORPTION OF ELECTROLYTE IONS
272 7.3.3. ACTION OF DEPOSITED SPECIES 275 7.3.4. MOVEMENT OF IMPURITIES
AND DEFECTS INTO THE ELECTRODE . 277 7.4. CORROSION 279 7.4.1.
INTRODUCTION 279 7.4.2. THEORY AND OBSERVATIONS OF SEMICONDUCTOR
CORROSION . 283 7.4.3. STABILIZING AGENTS TO PREVENT CORROSION 295 8.
COATED ELECTRODES 299 8.1. INTRODUCTION 299 8.1.1. THE BAND MODEL FOR
OXIDE FILMS 300 8.1.2. THIN FILMS 306 8.1.3. THE STRUCTURE OFTHICK FILMS
309 X CONTENTS 8.2. CURRENT TRANSPORT THROUGH OXIDE FILMS 315 8.2.1.
THIN OXIDE LAYERS 315 8.2.2. MODEL OF ELECTRONIC CONDUCTION THROUGH
THICK COHERENT LAYERS 318 8.2.3. SEMICONDUCTING OXIDE LAYERS ON METAL
ELECTRODES . . 324 8.2.4. INSULATING LAYERS ON METAL AND SEMICONDUCTOR
ELECTRODES 328 8.3. DEPOSITION OF REACTION PRODUCTS ON SEMICONDUCTOR
ELECTRODES . 331 9. APPLICATIONS OF SEMICONDUCTOR ELECTRODES 335 9.1.
SOLAR ENERGY CONVERSION 335 9.1.1. INTRODUCTION 335 9.1.2. PHOTOVOLTAIC
CELLS 338 9.1.3. CONVERSION OF OPTICAL TO CHEMICAL ENERGY 342 9.1.4.
CORROSION OFPEC CELLS 345 9.1.5. THE FUTURE POTENTIAL OF PEC SOLAR CELLS
347 9.2. ELECTROCATALYSIS ON SEMICONDUCTORS 348 9.2.1. GENERAL 348
9.2.2. SURFACE STATE ADDITIVES AND NARROW BANDS IN ELECTROCATALYSIS 352
9.3. NEW DEVICES 354 9.4. ELECTROPOLISHING OF SEMICONDUCTORS 355
REFERENCES 359 REFERENCES TO REVIEW ARTICLES AND BOOKS 374 AUTHOR INDEX
379 SUBJECT INDEX 389
|
| any_adam_object | 1 |
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| discipline | Chemie / Pharmazie |
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| id | DE-604.BV009960160 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:43:58Z |
| institution | BVB |
| isbn | 0306405245 |
| language | English |
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| physical | XIV, 401 S. graph. Darst. |
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| publishDate | 1984 |
| publishDateSearch | 1984 |
| publishDateSort | 1984 |
| publisher | Plenum Press |
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| spelling | Morrison, Stanley Roy Verfasser aut Electrochemistry at semiconductor and oxidized metal electrodes S. Roy Morrison 2. print. New York [u.a.] Plenum Press 1984 XIV, 401 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Elektrochemie (DE-588)4014241-3 gnd rswk-swf Metalloxide (DE-588)4169619-0 gnd rswk-swf Nichtmetall (DE-588)4042114-4 gnd rswk-swf Elektrode (DE-588)4014247-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiterelektrode (DE-588)4158799-6 gnd rswk-swf Elektrodenreaktion (DE-588)4151784-2 gnd rswk-swf Elektrodenreaktion (DE-588)4151784-2 s Metalloxide (DE-588)4169619-0 s DE-604 Halbleiterelektrode (DE-588)4158799-6 s Nichtmetall (DE-588)4042114-4 s 1\p DE-604 Halbleiter (DE-588)4022993-2 s Elektrochemie (DE-588)4014241-3 s 2\p DE-604 Elektrode (DE-588)4014247-4 s 3\p DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006600491&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Morrison, Stanley Roy Electrochemistry at semiconductor and oxidized metal electrodes Elektrochemie (DE-588)4014241-3 gnd Metalloxide (DE-588)4169619-0 gnd Nichtmetall (DE-588)4042114-4 gnd Elektrode (DE-588)4014247-4 gnd Halbleiter (DE-588)4022993-2 gnd Halbleiterelektrode (DE-588)4158799-6 gnd Elektrodenreaktion (DE-588)4151784-2 gnd |
| subject_GND | (DE-588)4014241-3 (DE-588)4169619-0 (DE-588)4042114-4 (DE-588)4014247-4 (DE-588)4022993-2 (DE-588)4158799-6 (DE-588)4151784-2 |
| title | Electrochemistry at semiconductor and oxidized metal electrodes |
| title_auth | Electrochemistry at semiconductor and oxidized metal electrodes |
| title_exact_search | Electrochemistry at semiconductor and oxidized metal electrodes |
| title_full | Electrochemistry at semiconductor and oxidized metal electrodes S. Roy Morrison |
| title_fullStr | Electrochemistry at semiconductor and oxidized metal electrodes S. Roy Morrison |
| title_full_unstemmed | Electrochemistry at semiconductor and oxidized metal electrodes S. Roy Morrison |
| title_short | Electrochemistry at semiconductor and oxidized metal electrodes |
| title_sort | electrochemistry at semiconductor and oxidized metal electrodes |
| topic | Elektrochemie (DE-588)4014241-3 gnd Metalloxide (DE-588)4169619-0 gnd Nichtmetall (DE-588)4042114-4 gnd Elektrode (DE-588)4014247-4 gnd Halbleiter (DE-588)4022993-2 gnd Halbleiterelektrode (DE-588)4158799-6 gnd Elektrodenreaktion (DE-588)4151784-2 gnd |
| topic_facet | Elektrochemie Metalloxide Nichtmetall Elektrode Halbleiter Halbleiterelektrode Elektrodenreaktion |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006600491&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT morrisonstanleyroy electrochemistryatsemiconductorandoxidizedmetalelectrodes |