Silicon based millimeter wave devices: with 14 tables
Saved in:
| Format: | Book |
|---|---|
| Language: | English |
| Published: |
Berlin u.a.
Springer
1994
|
| Series: | Springer series in electronics and photonics
32 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XVI, 343 S. Ill., graph. Darst. |
| ISBN: | 3540580476 0387580476 |
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MARC
| LEADER | 00000nam a2200000 cb4500 | ||
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| 001 | BV009701301 | ||
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| 016 | 7 | |a 941450619 |2 DE-101 | |
| 020 | |a 3540580476 |9 3-540-58047-6 | ||
| 020 | |a 0387580476 |9 0-387-58047-6 | ||
| 035 | |a (OCoLC)844311758 | ||
| 035 | |a (DE-599)BVBBV009701301 | ||
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| 084 | |a ZN 5030 |0 (DE-625)157431: |2 rvk | ||
| 084 | |a ELT 361f |2 stub | ||
| 245 | 1 | 0 | |a Silicon based millimeter wave devices |b with 14 tables |c J.-F. Luy ... (eds.) |
| 246 | 1 | 3 | |a Silicon-based millimeter-wave devices |
| 264 | 1 | |a Berlin u.a. |b Springer |c 1994 | |
| 300 | |a XVI, 343 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Springer series in electronics and photonics |v 32 | |
| 650 | 0 | 7 | |a Integrierte Millimeterwellenschaltung |0 (DE-588)4327817-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumbauelement |0 (DE-588)4181368-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Millimeterwellentechnik |0 (DE-588)4169986-5 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 0 | 1 | |a Millimeterwellentechnik |0 (DE-588)4169986-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Siliciumbauelement |0 (DE-588)4181368-6 |D s |
| 689 | 1 | 1 | |a Millimeterwellentechnik |0 (DE-588)4169986-5 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Integrierte Millimeterwellenschaltung |0 (DE-588)4327817-6 |D s |
| 689 | 2 | |5 DE-604 | |
| 689 | 3 | 0 | |a Integrierte Millimeterwellenschaltung |0 (DE-588)4327817-6 |D s |
| 689 | 3 | 1 | |a Siliciumbauelement |0 (DE-588)4181368-6 |D s |
| 689 | 3 | |5 DE-604 | |
| 700 | 1 | |a Luy, Johann-Friedrich |e Sonstige |4 oth | |
| 830 | 0 | |a Springer series in electronics and photonics |v 32 |w (DE-604)BV000023098 |9 32 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006417482&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-006417482 | |
Record in the Search Index
| _version_ | 1822052317759799296 |
|---|---|
| adam_text |
CONTENTS
1.
FUNDAMENTALS
BY
P.
RUSSER
AND
E.
BIEBL
(WITH
37
FIGURES)
.
1
1.1
SILICON
AS
THE
BASE
MATERIAL
FOR
MMICS
.
2
1.2
LINEAR
PASSIVE
PLANAR
MILLIMETER
WAVE
CIRCUITS
ON
SILICON
.
3
1.2.1
WAVE
PROPAGATION
IN
PLANAR
STRUCTURES
.
4
1.2.2
PLANAR
TRANSMISSION
LINES
.
8
1.2.3
PLANAR
TRANSMISSION-LINE
DISCONTINUITIES
.
18
1.2.4
PLANAR
RESONATORS
.
19
1.3
PLANAR
MILLIMETER-WAVE
ANTENNAS
ON
SILICON
.
22
1.3.1
ANTENNA
ELEMENTS
.
23
1.3.1
ANTENNA
ARRAYS
.
31
1.4
PLANAR
MILLIMETER-WAVE
CIRCUITS
CONTAINING
ACTIVE
AND
NONLINEAR
ELEMENTS
.
32
1.5
APPENDIX:
CLOSED-FORM
EXPRESSIONS
FOR
TRANSMISSION-LINE
CHARACTERISTICS
.
36
REFERENCES
.
41
2.
TRANSIT-TIME
DEVICES
BY
J.-F.
LUY
(WITH
29
FIGURES)
.
47
2.1
PRINCIPLES
OF
TRANSIT-TIME-INDUCED
NEGATIVE
RESISTANCE
.
47
2.2
INJECTION
MECHANISMS
.
51
2.2.1
IMPACT
IONISATION
-
IMPATT
DIODE
.
51
2.2.2
THERMIONIC
EMISSION
-
BARITT
DIODE
.
54
2.2.3
TUNNEL
INJECTION
.
56
2.2.4
THE
MISAWA
MODE
.
57
2.3
NUMERICAL
LARGE-SIGNAL
SIMULATIONS
.
59
2.4
SKIN
EFFECT
.
62
2.5
THERMAL
PROPERTIES
.
63
2.5.1
INTEGRATED
TRANSIT-TIME
DEVICES
.
66
2.5.2
DIAMOND
HEAT
SINKS
.
66
X
CONTENTS
2.5.3
RING
DIODES
.
68
2.5.4
TRANSIENT
THERMAL
RESISTANCE
.
69
2.5.5
MEASUREMENT
OF
THE
THERMAL
RESISTANCE
.
70
2.6
DESIGN
CONSTRAINTS
.
71
2.7
TECHNOLOGY
.
72
2.7.1
MATERIAL
GROWTH
.
72
2.7.2
CONTACTS
.
74
2.7.3
HANDLING
TECHNIQUES
.
75
2.7.4
PACKAGING
.
76
2.8
PERFORMANCE
.
77
2.8.1
POWER
.
78
2.8.2
EFFICIENCY
.
79
2.8.3
NOISE
.
80
2.9
NEW
TRANSIT-TIME
DEVICE
CONCEPTS
.
82
REFERENCES
.
84
3.
SCHOTTKY
CONTACTS
ON
SILICON
BY
J.H.
WERNER
AND
U.
RAU
(WITH
16
FIGURES)
.
89
3.1
SCHOTTKY-BARRIER
MODELS
.
90
3.1.1
THE
SCHOTTKY
MOTT
MODEL
.
90
3.1.2
THE
SPACE
CHARGE
REGION
.
91
3.1.3
BARDEEN
'
S
MODEL
.
92
3.1.4
LINEAR
MODELS
.
93
3.1.5
BARRIER
HEIGHT
CORRELATIONS
.
96
3.1.6
ADVANCED
MODELS:
CHARGE
TRANSFER
ACROSS
THE
INTERFACE
.
101
3.2
EPITAXIAL
DIODES
ON
SI
.
108
3.2.1
SINGLE-CRYSTALLINE
SCHOTTKY
CONTACTS
.
109
3.2.2
OTHER
ORIENTATIONAL
DEPENDENCES
.
115
3.2.3
CASI
2
AND
AG
.
116
3.2.4
POLYCRYSTALLINE
EPITAXIAL
CONTACTS
ON
SI
.
117
3.2.5
UNCONVENTIONAL
METALS
WITH
SMALL
LATTICE
MISMATCH
TO
SI
.
117
3.2.6
SUMMARY
.
117
3.3
ELECTRICAL
TRANSPORT
PROPERTIES
.
118
3.3.1
EMISSION
OVER
THE
BARRIER
.
119
3.3.2
TUNNELING
THROUGH
THE
BARRIER
.
121
3.3.3
GENERATION
RECOMBINATION
IN
THE
SPACE
CHARGE
REGION
.
123
3.3.4
MINORITY
CARRIER
INJECTION
.
124
3.3.5
INHOMOGENEITIES
IN
SCHOTTKY
CONTACTS
.
125
CONTENTS
XI
3.3.6
NOISE
PROPERTIES
.
130
3.3.7
MICROWAVE
PROPERTIES
.
131
3.4
SCHOTTKY-BARRIER
MEASUREMENTS
.
135
3.4.1
CURRENT-VOLTAGE
CURVES
.
135
3.4.2
CAPACITANCE
MEASUREMENTS
.
136
3.4.3
INTERNAL
PHOTOEMISSION
(PHOTORESPONSE)
.
136
3.4.4
EXTEMAL
PHOTOEMISSION
.
137
3.4.5
RESULTS
FOR
POLYCRYSTALLINE
CONTACTS
.
137
3.5
CONCLUSIONS
.
139
REFERENCES
.
140
4.
SIGE
HETEROJUNCTION
BIPOLAR
TRANSISTORS
BY
A.
GRUHLE
(WITH
29
FIGURES)
.
149
4.1
OPERATION
PRINCIPLE
OF
HOMOJUNCTION
AND
HETEROJUNCTION
BIPOLAR
TRANSISTORS
.
150
4.1.1
THE
BIPOLAR
JUNCTION
TRANSISTOR
AND
ITS
PHYSICAL
LIMITS
.
150
4.1.2
THE
HETEROJUNCTION
BIPOLAR
TRANSISTOR
.
153
4.1.3
THE
SI/GE
MATERIAL
SYSTEM
.
157
4.2
DESIGN
OF
SIGE
HBT
LAYERS
.
159
4.2.1
EMITTER
DESIGN
.
160
4.2.2
BASE
DESIGN
.
162
4.2.3
COLLECTOR
DESIGN
.
174
4.3
FABRICATION
TECHNOLOGIES
AND
DEVICE
PERFORMANCE
.
.
176
4.4
APPLICATIONS
OF
SIGE
HBTS
.
184
4.5
CONCLUSION
.
188
REFERENCES
.
189
5.
SILICON
MILLIMETER-WAVE
INTEGRATED
CIRCUITS
BY
J.
BUECHLER
(WITH
26
FIGURES)
.
193
5.1
SILICON
AS
THE
SUBSTRATE
MATERIAL
.
193
5.1.1
SILICON-SUBSTRATE
WAVEGUIDE
PARAMETERS
.
193
5.1.2
SURFACE
WAVES
.
194
5.2
MILLIMETER-WAVE
SOURCES
FOR
SIMMWICS
.
197
5.2.1
IMPATT
OSCILLATOR
.
197
5.2.2
VARACTOR-TUNED
OSCILLATOR
.
203
5.2.3
HBT
OSCILLATOR
.
205
5.3
SIMMWIC
TRANSMITTER
.
206
5.3.1
THERMAL
LIMITATION
OF
MONOLITHIC
IMPATT
DIODES
.
206
5.3.2
COPLANAR
SLOT-LINE
TRANSMITTER
.
207
XII
CONTENTS
5.4
SIMMWIC
RECEIVER
.
208
5.4.1
MICROSTRIP
RECEIVER
.
208
5.4.2
COPLANAR
SLOT-LINE
RECEIVER
.
210
5.4.3
RESONANT
TUNNELING
RECTENNA
.
212
5.5
SIMMWIC
SWITCH
.
212
REFERENCES
.
213
6.
SELF-MIXING
OSCILLATORS
BY
M.
CLAASSEN
(WITH
7
FIGURES)
.
215
6.1
PRINCIPLE
OF
OPERATION
.
215
6.2
LINEAR
DISTURBANCE
THEORY
.
216
6.2.1
MODEL
FOR
THE
SELF-MIXING
OSCILLATOR
.
217
6.2.2
CONVERSION-GAIN
FACTORS
.
220
6.2.3
SIMPLIFIED
DEVICE
MODEL
.
221
6.3
MATRIX
FORMULATION
OF
CONVERSION
GAIN
.
226
6.3.1
CONVERSION
MATRIX
.
226
6.3.2
CONVERSION
GAIN
.
228
6.4
NOISE
IN
SELF-MIXING
OSCILLATORS
.
230
6.4.1
RF
NOISE
.
230
6.4.2
LOW
FREQUENCY
NOISE
.
231
6.5
NUMERICAL
SIMULATIONS
.
232
6.6
MEASURING
TECHNIQUES
AND
EXPERIMENTAL
RESULTS
.
235
6.6.1
MEASURING
SET-UP
.
235
6.6.2
EXPERIMENTAL
RESULTS
OF
A
SI-IMPATT
DEVICE
IN
THE
V-BAND
.
237
REFERENCES
.
238
7.
SILICON
MILLIMETER-WAVE
INTEGRATED
CIRCUIT
TECHNOLOGY
BY
K.M.
STROHM
(WITH
36
FIGURES)
.
241
7.1
TECHNOLOGICAL
REQUIREMENTS
FOR
A
MILLIMETER-WAVE
SUBSTRATE
.
241
7.1.1
HISTORICAL
BACKGROUND
OF
SIMMWIC
TECHNOLOGY
.
243
7.1.2
CHARACTERIZATION
OF
HIGH-RESISTIVE
SILICON
SUBSTRATES
.
245
7.1.3
BEHAVIOUR
OF
HIGH-RESISTIVE
SILICON
SUBSTRATES
DUERING
FABRICATION
PROCESSES
.
247
7.2
BASIC
TECHNOLOGIES
.
250
7.2.1
BURIED
LAYERS
.
250
7.2.2
EPITAXIAL
GROWTH
.
253
CONTENTS
XIII
7.2.3
LITHOGRAPHY
.
257
7.2.4
PATTEM
TRANSFER
.
259
7.2.5
METALLIZATION
AND
AIR
BRIDGE
TECHNOLOGY
.
263
7.3
FABRICATION
PROCESS
AND
MONOLITHIC
INTEGRATION
OF
TWO-TERMINAL
DEVICES
.
266
7.3.1
FABRICATION
PROCESS
OF
COPLANAR
SCHOTTKY-BARRIER
DIODES
.
266
7.3.2
FABRICATION
PROCESS
OF
MONOLITHICALLY
INTEGRATED
TRANSIT-TIME
DIODES
272
7.3.3
FABRICATION
PROCESS
OF
LATERAL
PIN
DIODES
.
276
7.4
FABRICATION
PROCESS
OF
THREE-TERMINAL
DEVICES
.
277
7.4.1
BIPOLAR
TRANSISTORS
.
277
7.4.2
HETERO
BIPOLAR
TRANSISTORS
FOR
SIMMWICS
.
.
.
279
7.5
SUMMARY
AND
PROSPECTS
.
281
REFERENCES
.
281
8.
FUTURE
DEVICES
BY
M.
WILLANDER,
Y.
FU
AND
Q.
CHEN
(WITH
14
FIGURES)
.
285
8.1
PHYSICS
AND
APPLICATIONS
OF
SI/SIGE,
DOUBLE-BARRIER
STRUCTURES
.
285
8.1.1
BAND
STRUCTURE
OF
SI/SIGE
.
286
8.1.2
TUNNELING
CURRENT
CALCULATION
.
289
8.1.3
THE
QUANTUM-MECHANICAL
CONCEPT
OF
ELECTROMAGNETIC
OSCILLATIONS
FROM
RESONANT-TUNNELING
DOUBLE
BARRIERS
.
293
8.1.4
CALCULATION
OF
FOR
N-TYPE
SI/SIGE
TUNNELING
DIODES
.
294
8.1.5
EQUIVALENT-CIRCUIT
ANALYSIS
OF
OSCILLATION
FREQUENCY
AND
OUTPUT
POWER
FROM
AN
N-TYPE
SI/SIGE
DOUBLE-BARRIER
DIODE
.
299
8.1.6
MILLIMETER-WAVE
DETECTION
BY
SI/SIGE
DOUBLE
BARRIERS
.
300
8.2
THE
SI/SIGE
QUANTUM
BARRIER
VARACTOR
DIODE
.
301
8.3
FIELD-EFFECT
DEVICES:
SI/SIGE
MODFET
AND
MOST,
5-DOPED
SI
FET
.
301
8.3.1
DC
AND
HF
MODELING
.
302
8.3.2
MODELING
RESULTS
AND
COMPARISON
WITH
SI
N
AND
P-MOSTS
.
308
8.3.3
EXPERIMENTAL
RESULTS
.
311
8.3.4
PROCESSING
STEPS:
GROWTH
AND
POST
PROCESSING
.
313
APPENDIX
8.
A
THE
EFFECTIVE-MASS
APPROXIMATION
.
314
XIV
CONTENTS
APPENDIX
8.B
MAXIMUM
OSCILLATION
FREQUENCY
AND
POWER
GENERATION
.
317
REFERENCES
.
319
9.
FUTURE
APPLICATIONS
BY
W.
MENZEL
(WITH
6
FIGURES)
.
323
9.1
SENSOR
APPLICATIONS
.
324
9.1.1
MEASUREMENT
PRINCIPLES
.
324
9.1.2
RADIOMETRIE
SENSORS
.
324
9.1.3
CW
RADAR
SENSORS
.
326
9.1.4
FREQUENCY
MODULATED
RADAR
SENSORS
.
327
9.1.5
PULSE-MODULATED
RADARS
.
328
9.2
COMMUNICATION
APPLICATIONS
.
328
9.2.1
GENERAL
CONSIDERATIONS
.
328
9.2.2
IDENTIFICATION
CARD
SYSTEMS
.
329
9.2.3
SHORT-RANGE
DATA
TRANSMISSION
.
330
9.2.4
INFORMATION
SYSTEMS
.
331
9.2.5
MILLIMETER-WAVE
DATA
BUS
.
331
9.3
SYSTEM
REQUIREMENTS
.
331
9.3.1
GENERAL
SYSTEM
ASPECTS
.
331
9.3.2
FREQUENCY
STABILITY
.
332
9.3.3
ENVIRONMENTAL
CONDITIONS
.
334
9.3.4
PACKAGING
.
335
REFERENCES
.
336
SUBJECT
INDEX
.
339 |
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV009701301 |
| classification_rvk | UX 2150 UX 2500 ZN 4970 ZN 5030 |
| classification_tum | ELT 361f |
| ctrlnum | (OCoLC)844311758 (DE-599)BVBBV009701301 |
| dewey-full | 621.3813 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3813 |
| dewey-search | 621.3813 |
| dewey-sort | 3621.3813 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV009701301 |
| illustrated | Illustrated |
| indexdate | 2025-01-23T15:01:38Z |
| institution | BVB |
| isbn | 3540580476 0387580476 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006417482 |
| oclc_num | 844311758 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR DE-91 DE-BY-TUM DE-91G DE-BY-TUM DE-703 DE-83 DE-188 |
| owner_facet | DE-355 DE-BY-UBR DE-91 DE-BY-TUM DE-91G DE-BY-TUM DE-703 DE-83 DE-188 |
| physical | XVI, 343 S. Ill., graph. Darst. |
| publishDate | 1994 |
| publishDateSearch | 1994 |
| publishDateSort | 1994 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in electronics and photonics |
| series2 | Springer series in electronics and photonics |
| spelling | Silicon based millimeter wave devices with 14 tables J.-F. Luy ... (eds.) Silicon-based millimeter-wave devices Berlin u.a. Springer 1994 XVI, 343 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in electronics and photonics 32 Integrierte Millimeterwellenschaltung (DE-588)4327817-6 gnd rswk-swf Siliciumbauelement (DE-588)4181368-6 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Millimeterwellentechnik (DE-588)4169986-5 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s Millimeterwellentechnik (DE-588)4169986-5 s DE-604 Siliciumbauelement (DE-588)4181368-6 s Integrierte Millimeterwellenschaltung (DE-588)4327817-6 s Luy, Johann-Friedrich Sonstige oth Springer series in electronics and photonics 32 (DE-604)BV000023098 32 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006417482&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Silicon based millimeter wave devices with 14 tables Springer series in electronics and photonics Integrierte Millimeterwellenschaltung (DE-588)4327817-6 gnd Siliciumbauelement (DE-588)4181368-6 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Millimeterwellentechnik (DE-588)4169986-5 gnd |
| subject_GND | (DE-588)4327817-6 (DE-588)4181368-6 (DE-588)4113826-0 (DE-588)4169986-5 |
| title | Silicon based millimeter wave devices with 14 tables |
| title_alt | Silicon-based millimeter-wave devices |
| title_auth | Silicon based millimeter wave devices with 14 tables |
| title_exact_search | Silicon based millimeter wave devices with 14 tables |
| title_full | Silicon based millimeter wave devices with 14 tables J.-F. Luy ... (eds.) |
| title_fullStr | Silicon based millimeter wave devices with 14 tables J.-F. Luy ... (eds.) |
| title_full_unstemmed | Silicon based millimeter wave devices with 14 tables J.-F. Luy ... (eds.) |
| title_short | Silicon based millimeter wave devices |
| title_sort | silicon based millimeter wave devices with 14 tables |
| title_sub | with 14 tables |
| topic | Integrierte Millimeterwellenschaltung (DE-588)4327817-6 gnd Siliciumbauelement (DE-588)4181368-6 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Millimeterwellentechnik (DE-588)4169986-5 gnd |
| topic_facet | Integrierte Millimeterwellenschaltung Siliciumbauelement Halbleiterbauelement Millimeterwellentechnik |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006417482&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000023098 |
| work_keys_str_mv | AT luyjohannfriedrich siliconbasedmillimeterwavedeviceswith14tables AT luyjohannfriedrich siliconbasedmillimeterwavedevices |