Microelectronics '92: 21 - 23 September 1992, Warsaw, Poland
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| Format: | Conference Proceeding Book |
|---|---|
| Language: | English |
| Published: |
Bellingham, Wash.
SPIE
1992
|
| Series: | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE
1783 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XII, 652 S. Ill., graph. Darst. |
| ISBN: | 0819409626 |
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| 084 | |a ELT 340f |2 stub | ||
| 245 | 1 | 0 | |a Microelectronics '92 |b 21 - 23 September 1992, Warsaw, Poland |c International Conference of Microelectronics. Andrzej Sowiński ..., eds. |
| 264 | 1 | |a Bellingham, Wash. |b SPIE |c 1992 | |
| 300 | |a XII, 652 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 1783 | |
| 650 | 0 | 7 | |a Mikroelektronik |0 (DE-588)4039207-7 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1992 |z Warschau |2 gnd-content | |
| 689 | 0 | 0 | |a Mikroelektronik |0 (DE-588)4039207-7 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Sowiński, Andrzej |e Sonstige |4 oth | |
| 711 | 2 | |a International Conference of Microelectronics |d 1992 |c Warschau |j Sonstige |0 (DE-588)5072392-3 |4 oth | |
| 830 | 0 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 1783 |w (DE-604)BV000010887 |9 1783 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006337949&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-006337949 | ||
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| adam_text | Contents
ix Conference
Committees
xi
Introduction
PLENARY SESSION
2
Recent progress in neural networks (Invited Paper)
[1783-69]
J. J. Mulawka, Warsaw Univ. of Technology (Poland).
13
Current trends in molecular sensing (Invited Paper)
[1783-85]
W. Wlodarski, Royal Melbourne Institute of Technology (Australia).
16
Vacuum microelectronics: present status and development trends (Invited Paper)
[1783-86]
M. A. Herman, OBREP and Institute of Physics (Poland).
_______
ANALYSIS AND DESIGN
___________________________________________________________
32
Algorithmic measurement theory and application for signal microprocessors
(1783-03]
P. A. Arutyunov, Moscow institute of Electron
Machine-Building
(Russia).
41
Application of the design and control system SEMICROT for bipolar devices
[1783-05]
L.
Nagy,
С.
Kosza, Z.
Formanek-Nagy, Research Institute
for Telecommunications (Hungary).
48
VHDL
as a specification language for high-level synthesis system
[1783-06]
W. Sakowski, M. Ossysek, B.
Nowak, Silesian
Technical Univ. (Poland).
58
Monte Carlo simulation of
submicron Si
p-MOSFETs
[1783-07]
M. Ershov, J. Ershova, V. Ryzhii, Institute of Physics and Technology (Russia).
68
PLO-based synthesis of digital circuits
[1783-10]
K.
Jasiński,
J. Kalinowski, T.
Luba,
Warsaw Univ. of Technology (Poland).
77
Logic decomposition aimed at programmable cell arrays
[1783-11]
M. A. Markowski, T.
Luba,
Warsaw Univ. of Technology (Poland).
89
Device modeling for high-speed three-dimensional CMOS/SOI integrated
circuite
[1783-12]
К. О.
Petrosjanc,
M.
V.
Sicheva,
Moscow Institute of Electronic Engineering (Russia).
96
MMIC amplifier for
0.9-2.0
GHz
[1783-17]
B. Paszkiewicz, R. Paszkiewicz, B.
Boráty
nski, M. Szreter, Institute of Electron Technology
(Poland).
100
GaAs planar doped barrier diodes for microwave applications
[1783-18]
B.
Szentpáli,
V. V. Tuyen,
M. Németh-Sallay,
Research Institute for Technical Physics (Hungary);
A. Salokatve, H. M. Asonen, M. Pessa, Tampere Univ. of Technology (Finland).
112
Х
-band
GaAs MESFET
[1783-19]
M. Szreter,
8.
Boratyrtski, B. Paszkiewicz, I. Zborowska-Lindert, Technical Univ. of Wroclaw
(Poland).
(continued)
5P/£ Vol.
1783
International Conference of Microelectronics
(1992)
I iii
SESSION 2 1С
MEASUREMENT AND TESTING
118
Characterization of degradation processes in
MOS
VLSI structures
[1783-20]
T.
Brožek,
Warsaw Univ. of Technology (Poland); A. jakubowski, Warsaw Univ. of Technology
and Institute of Electron Technology (Poland); B. Majkusiak, Warsaw Univ. of Technology
(Poland).
128
Study of the development of failure processes of
MOS
(MES) LSIC
active structures with the
help of surface acoustic waves
[1783-21]
A. P. Dostanko, V. M. Ivkin, I. P.
Satnikova,
Minsk
Radioengineering
Institute (Belarus).
135
Capacitance measurements at low frequencies in the study of amorphous silicon
[1783-22]
S. M.
Pietruszko,
M. Sokolowski,
Warsaw Univ. of Technology (Poland).
142
Digital circuits diagnosis automation on the SEWTIDUE expert system example
[1
783-24J
K.
Badźmirowski,
Industrial Institute of Electronics (Poland); R. Kulesza, Industrial institute of
Electronics and Military Technical Academy (Poland); A. K.
Wach,
Industrial Institute of
Electronics (Poland).
149
Some problems of implementation: ANSI/IEEE Std
1149.1
in microcontroller design
[1783-25]
H. Adamkiewicz, K. Glirtski, A. Lewandowski, Industrial Institute of Electronics (Poland).
158
Architecture and some properties of digital circuits with boundary scan
Π
783-26]
J.
Kern, Industrial Institute of Electronics (Poland).
170
Some checking algorithms of digital circuits testability
[1783-27]
R. Kulesza, Military Technical Academy and Industrial Institute of Electronics (Poland);
A. K.
Wach,
Industrial Institute of Electronics (Poland).
178
Testing method of DTMF circuits for telephony
[1783-33]
K. Burakowski, D. Mrozowska,
J. Zajac,
Industrial Institute of Electronics (Poland).
184
Testing of semantic integrity based on associative group code propagation
[1783-34]
J. A. Chudziak, Warsaw Univ. of Technology (Poland).
SESSION
3
DEVICES AND CIRCUITS
194
Macro management of microelectronics in India in
1990s
Π
783-36]
P. K. Gupta, National Foundation of Indian Engineers (India).
205
CUPLÂND:
behavioral level description compiler for designing of PLD-based circuits
(1783-37]
S. Denmak, K. Sap.echa,
Kielce
Univ. of Technology and ResComp
Kielce
(Poland).
213
м
ΐ Τϋ^Γ ΐ·!11
»»•»«nrtttllta.
elemente
of semiconductor devices
[1783-38]
M. M.
Tkachenko, Industrial Institute (Ukraine).
3
M
ÜT
TJČT
Γ*ΐΐ°!
the P01*1™
«ritter
interface
for bipolar transistor
p
783-40]
M. M. Tkachenko, G. P. Kobmoets,
V.
N.
Nazarenko, Industrial Institute
(Ukraine).
M
мТЅГпк?
r*°ľ
ft
^ ^ d-ced
tuning of the electrical parameters
[1783-43]
M. M. Tkachenko, G. P. Kobmoets,
N.
G. Melentjev, Industrial Institute (Ukraine).
233
244
Xlľiinf Tľ? analy$ÍS
Of thyristOr ith
« ο**
fitter
Π
783-44]
, Technical Univ. of Lodz (Poland).
/v
/
SPIE
Vol.
1783
International Conference of Microelectronics
(1992)
254
Improvement of the efficiency of acoustic amplifiers
[1783-46]
W. Mysiński,
M. Kowalczewski,
Technical Univ. of Cracow (Poland).
259
Information-writing mechanisms in thin-film metal-ferroelectric-insulator-semiconductor
structures
[1783-47]
I. L. Baginsky, E. C. Kostov, Institute of Automation and Electrometry (Russia).
269
High-voltage
MOS
transistors compatible with CMOS VLSI technology
[1783-48]
W. Podmiotko, Institute of Electron Technology (Poland).
281
Monte Carlo simulation of AIGaAs/CaAs HBTs with different collector structure
(1783-125]
C. Khrenov, V. Ryzhii, S.
Kartashov,
Institute of Physics and Technology (Russia).
SESSION
4
SENSORS
294
Three-lead temperature-current sensor and its application
[1783-49]
I. V. Corabelnikov, V. V.
Meer,
V. A. Strick, Radiotechnical Institute (Russia).
300
Microelectronic NH, sensor on the base of poly-Si films
[1783-50]
F. Kasimov, O. Negodenko, V. Mamikonova, S. Ragimov, Institute of Space Research for Natural
Resources (Azerbaijan).
306
Possible application of peak effect as high-T,. superconducting sensor for detecting magnetic
field sweep rate
[1783-51]
J. Sosnowski, Electrotechnical Institute (Poland); V. I. Datskov, Joint Institute for Nuclear
Research (Russia).
315
Thick and thin film heaters for gas sensors
[1783-53]
S.
Nowak,
T. Pisarkiewicz,
Academy of Mining and Metallurgy (Poland).
322
Silicon pressure sensor for
biomedicine
applications
[1783-54]
J. Dziuban, A. Gorecka-Drzazga, U. Lipowicz, Technical Univ. of Wroclaw (Poland).
SESSION
5
MATERIALS
____________________________________________________________
330
Disorder of GaAs single crystals resulting from heat treatment
[1783-56]
A.
N.
Akimov, L. A. Vlasukova, Byelorussian State Univ. (Belarus).
338
Role of metallization type in semi-insulating GaAs-based optoelectronic switches
[1783-59]
F. Riesz, B.
Szentpáli,
M. Németh-Sallay, M.
Serényi,
Research
Institute for Technical Physics
(Hungary).
350
Gettering
annealing effect on deep-level defect concentration in epitaxial GaAs obtained by
chloride method
[1783-61]
P. V. Kouchinski, V. M. Lomako, L.
N.
Shakhlevich, Scientific-Research Institute for Applied
Physics Problems (Belarus); M. S. Rusak, G.
N.
Troyanova,
K. D.
Yashin, Scientific-Research
Institute of Radioactive Materials (Belarus).
356
Influence of silicon surface carbon contamination on oxide quality and SiQ-Si systems
properties
[1783-63]
R. B. Beck, T.
Brožek,
Warsaw Univ. of Technology (Poland); J. Ruzyllo, The Pennsylvania State
Univ. (USA).
(continued)
SPIE
Vol.
1783
International Conference of Microelectronics
(1992) lv
360 Radiation
hardness of silicon dioxide dielectric strength in silicon
MOS
structures
f
1783-64]
T.
Brožek,
Warsaw Univ. or Technology (Poland).
366
Sharp prismatoidal tips for vacuum microelectronics on silicon
[1783-65]
Л.
Gorecka-Drzazga, J.
Dziuban, W. Drzazga,
Technical Univ. of Wroclaw (Poland).
378
Investigation of time stability porous silicon layer
[1783-66]
V. Kiseiev, A. Churilov, A. Chrebtugov, D. V. Buyanov, A. Svetlov, Institute of Microelectronics
(Russia).
386
Etching of silicon in CBrF,: formation of deep trenches and plasma diagnostics
(1783-67]
Yu. P. Baryshev, K. Sh. Isaev, I. E. Nikiphorov, A. A. Orlikovsky, A. V. Sapozhnikov, Institute of
Physics and Technology (Russia).
398
New method of thermal placement in hybrid circuits
[1783-71]
A. Kos,
Academy of Mining and Metallurgy (Poland).
410
Growth kinetics and properties of ultrathin films of silicon dioxide
[1783-72]
V. V. Khatko,
N.
V.
Rumak,
Physical and Engineering Institute (Belarus).
417
Control and characterization of semiconductor superiattices by grazing: incidence x-ray
diffraction method
[1783-73]
R. M. Imamov, O. G. Melikyan, D. V. Novikov, Institute of Crystallography (Russia).
425
Formation of
submicron
diffused layers by multipulse incoherent light treatment
[1783-74]
I.
8.
Khaibullin, Ya. V. Fattakhov, Kazan Physical-Technical Institute (Russia).
430
Vacuum-plasma deposition of resist film on substrate by means of copoiymerization of
monomers in the afterglow
жопе
of rf discharge
[1783-75]
N. N.
Simakov, V. Fyodorov,
N.
Savinskiy, Institute of Microelectronics (Russia).
437
Radiation-induced modification of the dry vacuum photoresist layers during ion implantation
11783-76]
E. V. Kotov, Yu. I. Gudimenko, V. E. Agabekov, Institute of Physical Organic Chemistry (Belarus).
442
Pulsed laser-excited microwave photoconductivity applications to high-resolution defect
diagnostics of ion· and laser-beanwnodified semiconductor surface
[1783-821
A. A. Manenkov,
S. Yu. Sokolov, D. L.
Khavroshin, General Physics Institute (Russia).
453
Physical and technological
aspecto
of anomalous current-voltage characteristics of Schottlcy
diodes at low temperatures
[1783-87]
Z. J.
Horváth,
Research Institute for Technical Physics (Hungary).
462 ) №<«·«:<
of implanted ion charge on electrophysical parameters of formed structures
11
/oj OOj
89]
------------_.„ ,
„/sics (Bulgaria);
B.
Pödör,
Institute for Technical Physics (Hungary).
Fattakhov,
E. Yu.
Кшѕ,
I.
В.
Khaibullin,
N.
V. Kurbatova,
E.
I- Shtyrkov, Kazan
il-Technical Institute
(Russia).
470
Reduction of residual doping in molecular-beam epitaxial GaAs
[1783-8
G. Minchev, L. Pramatarova, L. Trendafilov, Institute of Solid State Physi
K.
Somogyi,
L.
Andor,
I. Mojzes, Research Institute for Technical Physic«
_ ..
478
Spectroscoptc inspection of oxygen ordering in Y-Ba-Cu-O
[1783-90]
D. V. Buyanov, A. Churilov, Institute of Microelectronics (Russia); A. S. Rudy, Yaroslavl State
Univ. (Russia).
vi /
SPIE Voi.
1
783
International Conference of Microelectronics
{1992)
484 Traps in
neutron-transmutation-doped silicon introduced by proton irradiation
[ 1783-91 ]
V. Nágl,
Slovak Technical Univ. (Czechoslovakia);
A. Hallén,
Uppsala Univ. (Sweden).
491
Surrounding medium parameter control devices on the basis of magnetic bubble conducting
materials
[1783-93]
O. Safronova, V. Sondaevskii, V. V. Uzdovskii, Moscow Institute of Electronic Technique
(Russia).
494 600°С
thermal oxidation of amorphous LPCVD silicon for thin film transistor application
[1783-94]
G. Sarrabayrouse, P.
Taurines,
E.
Scheid,
D. Bielle-Daspet, LAAS-CNRS
(France);
В.
de Mauduit,
J.
P. Guillemet, CEMES/LOE (France); A.
Martinez, LAAS-CNRS
(France).
499
Properties of
heterostructures for pseudomorphic HEMTs
[1783-95]
T.
Škrabka,
Technical Univ. of Wroclaw (Poland); C.
M. Sotomayor
Torres, Univ. of Glasgow
(UK).
509
Advanced MESFET burn-in method and equipment
[1783-96]
B.
Kovács,
Research Institute for Technical Physics (Hungary); I. Mojzes, Technical Univ.
(Hungary);
F. Csányi,
Research Institute for Technical Physics (Hungary).
514
Fast and simple checking methods of the doping concentration in semiconductors
[1783-97]
Z. J.
Horváth,
Research Institute for Technical Physics (Hungary).
519
Solid-phase doping of silicon by flash lamp and laser irradiation
[1783-98]
A. V. Chankin, G.
N.
Mikhailova, A. S. Seferov, General Physics Institute (Russia);
Ya. V. Fattakhov, I. B. Khaibullin, Kazan Physical-Technical Institute (Russia); A. Dhaul,
R. Chander, Solid State Physics Lab. (India).
530
Composition and properties of PECVD silicon and boron nitrides films
[1783-121]
Z. L.
Akkerman,
N.
I. Fainer, M. L.
Kosinová,
A.
N.
Korshunov, Yu. M. Rumjantsev,
E. G.
Salman,
N.
P. Sysoeva, Institute of Inorganic Chemistry (Russia).
541
Thermodynamic simulation of deposition of molybdenum and tungsten disilicides in MOCVD
processes
[1783-122]
F. A. Kuznetsov, V.
A. Titov,
A.
N.
Golubenko,
A. A. Titov,
Institute of Inorganic Chemistry
(Russia).
551
Thermal activation energy of natural acceptors in GaSb
[1783-123]
B. Pödör, K.
Somogyi,
Research Institute for Technical Physics (Hungary).
559
Electrical properties of Mg-doped GaAs and
Aţ,Ga,.,As (x
¿
0.36) [1783-124]
L.
Csontos,
B.
Pödör,
К.
Somogyi, L. Andor,
Research
Institute
for Technical Physics (Hungary).
SESSION
6
SEMICONDUCTOR DEVICES PROCESSING
___________________________________________
570
Laser annealing of silicon islands
[1783-102]
O. Safronova, A. Komarnitskii, V. Kukin, B. Sedunov, V. V. Uzdovskii, V. Khainovskii, Moscow
Institute of Electronic Technique (Russia).
574
Ohmic contacts formation to GaAs by laser irradiation
[1783-103]
A. V. Chankin, G.
N.
Mikhailova, A. S. Seferov, General Physics Institute (Russia); A. Ohaul,
R. Chander, I. Chandra, Solid State Physics Lab. (India).
(continued)
SPIE
Vol.
J
783
international Conference of Microelectronics
(1992)
I
vii
580
Laser
gettering
of GaAs
[1783-104]
Y. Bobitski,
Z.
Y. Gotra, D. Korbutjak,
Lviv Polytechnic Institute
(Ukraine).
584
Reactive ion
etching of deep
trenches in
silicon
[1783-106]
V. V. Bliznetsov, O. P. Gutshín, V. Yachmenev,
Scientific
Research Institute
of Molecular
Electronics
and Pilot Plant
Mikron
(Russia).
590
Study
of charge carriers
mobility
degradation in the MOS-transistor channel by means of Hall
current
[1783-1101
A. P. Dostanko, V. M. Ivkin, I. P. Salnikova, Minsk
Radioengineering
Institute (Belarus).
Influence of
bandgap
localized states on metal-amorphous hydrogenated silicon
contaci
parameters
[1783-126]
N.
V. Vishnyakov, S. P. Vikhrov, V. A. Ligachev,
Radiotechnical
Institute (Russia).
604
Vacuum-vapor-deposited thin films of benzoIajphenoxazone-5 derivatives as photoresist layers:
properties versus deposition parameters
[1783-127]
bkV YU L Gudimenko
°· Ε·
gnasheva, Institute of Physical-Organic Chemistry
611
Simulation of
Vf
noise of semiconductor devices
[1783-128]
L. Z.
Hasse,
Technical Univ. of
Gdańsk
(Poland).
SESSION
7
OPTOELECTRONICS
620 Photoemission
and field effect
[1783-114]
J. Olesik, B.
Calusiński, Z.
Olesik, Pedagogical Univ. of
Częstochowa
(Poland).
626
Lle?rí
?*?
structure optimization in
1С
solid state spatial light modulator
[1783-1161
?
í
;
«ä?
сіУ
A; Ta,rasov
·
v· Tokarev, Glushkov Institute of Cybernetics (Ukraine);
5. 5.
Sark.sov, Shevchenko Kiev State Univ. (Ukraine).
633
F
«« «»СУ
response of p-i-n avalanche
photodiodes: a
normalized description
[1783-117]
F. Riesz, Research Institute for Technical Physics (Hungary).
640
мК^Г.Г1
TT?
Of
1пСлАѕ?ПпР
Photodiodes fi
783-118]
(Čzechoslovakiľ)
R Srnanek J- Jakabovic, M. Tomaska, Slovak
Technical Univ.
651
Author index
νβΙ
/
SP/f
Vo/.
, 783
/melona/
Conference of M/croe/eCon/cs
( 1992)
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV009589270 |
| classification_rvk | ZN 4900 |
| classification_tum | ELT 340f |
| ctrlnum | (OCoLC)80324954 (DE-599)BVBBV009589270 |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1992 Warschau gnd-content |
| genre_facet | Konferenzschrift 1992 Warschau |
| id | DE-604.BV009589270 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:37:36Z |
| institution | BVB |
| institution_GND | (DE-588)5072392-3 |
| isbn | 0819409626 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006337949 |
| oclc_num | 80324954 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | XII, 652 S. Ill., graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | SPIE |
| record_format | marc |
| series | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |
| series2 | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |
| spelling | Microelectronics '92 21 - 23 September 1992, Warsaw, Poland International Conference of Microelectronics. Andrzej Sowiński ..., eds. Bellingham, Wash. SPIE 1992 XII, 652 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 1783 Mikroelektronik (DE-588)4039207-7 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 Warschau gnd-content Mikroelektronik (DE-588)4039207-7 s DE-604 Sowiński, Andrzej Sonstige oth International Conference of Microelectronics 1992 Warschau Sonstige (DE-588)5072392-3 oth Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 1783 (DE-604)BV000010887 1783 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006337949&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Microelectronics '92 21 - 23 September 1992, Warsaw, Poland Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE Mikroelektronik (DE-588)4039207-7 gnd |
| subject_GND | (DE-588)4039207-7 (DE-588)1071861417 |
| title | Microelectronics '92 21 - 23 September 1992, Warsaw, Poland |
| title_auth | Microelectronics '92 21 - 23 September 1992, Warsaw, Poland |
| title_exact_search | Microelectronics '92 21 - 23 September 1992, Warsaw, Poland |
| title_full | Microelectronics '92 21 - 23 September 1992, Warsaw, Poland International Conference of Microelectronics. Andrzej Sowiński ..., eds. |
| title_fullStr | Microelectronics '92 21 - 23 September 1992, Warsaw, Poland International Conference of Microelectronics. Andrzej Sowiński ..., eds. |
| title_full_unstemmed | Microelectronics '92 21 - 23 September 1992, Warsaw, Poland International Conference of Microelectronics. Andrzej Sowiński ..., eds. |
| title_short | Microelectronics '92 |
| title_sort | microelectronics 92 21 23 september 1992 warsaw poland |
| title_sub | 21 - 23 September 1992, Warsaw, Poland |
| topic | Mikroelektronik (DE-588)4039207-7 gnd |
| topic_facet | Mikroelektronik Konferenzschrift 1992 Warschau |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006337949&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000010887 |
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