Crucial issues in semiconductor materials and processing technologies: [proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1 - 13 July 1991]
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Dordrecht u.a.
Kluwer
1992
|
| Schriftenreihe: | NATO: [Nato ASI series / E]
222 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIX, 538 S. Ill., graph. Darst. |
| ISBN: | 0792320034 |
Internformat
MARC
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| 245 | 1 | 0 | |a Crucial issues in semiconductor materials and processing technologies |b [proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1 - 13 July 1991] |c ed. by S. Coffa ... |
| 264 | 1 | |a Dordrecht u.a. |b Kluwer |c 1992 | |
| 300 | |a XIX, 538 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a NATO: [Nato ASI series / E] |v 222 | |
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Datensatz im Suchindex
| _version_ | 1804123858002771968 |
|---|---|
| adam_text | CONTENTS
Preface
xi
List of Contributors
xv
Section
1:
Materials
&
Devices
♦Defect Aspects of Advanced Device Technologies
B.O.Kolbesen
.................................................................................................................3
Field Effect Analysis in Low Voltage Operation a-Si:H Thin Film Transistors with
Very Thin PECVD a-SiC^ Gate Dielectric
P.
Foglietti,
G.
Fortunato,
L.
Mariucci and C.
Reità
......................................................27
*Silicon and Silicon:
Germanium Alloy Growth; Means and Applications
B.S. Meyerson
.................................................................................................................33
*Preparation and Characterization of Silicon Ribbons
S.Sivoththaman and M. Rodot
.........................................................................................49
Rapid Thermal Chemical Vapor Deposition of SixGei_x Alloys on Si and SiO2 and
New Applications of Six
Gej
_x Alloys in Advanced MOSFET Processes
D. T. Grider, M. C.
Öztürk,
S.
Ashburn,
M.
Sanganeria,
J. J.
Wortman
.........................55
Kinetics and Dynamics of MBE Growth
B.A.Joyce
........................................................................................................................61
Effects of Near-Interface Defects on the Optical Properties of MBE Grown
GaAs/AlGaAs Layers
M.
Jaraíz
..........................................................................................................................79
♦Optoelectric Materials
M. Quillec
........................................................................................................................83
Electrical Characteristics of PECVD Silicon Nitride/Compound Semiconductor
Interfaces for Optoelectronic Device Passivation
A. Piccirillo
and P.
E. Bagnoli
........................................................................................
ЮЗ
*Invited paper.
Section
2:
Processing Technologies
*Fundamentals of Semiconductor Processing
L.C.
Kimerling
................................................................................................................
Ш
Optical Analysis of Oxygen in Epitaxial Silicon
M.GeddoandB.Pivac
....................................................................................................119
Electrical Properties of Clean and Fe-Decorated Stacking Faults in p-type Si
B. Fiegl and G. Zoth
........................................................................................................129
On the Dirty Contacts on
η
-type
Silicon
A. Castaldini, D. Cavalcoli and
A. Cavallini
..................................................................135
Mössbauer
Study of the DX-Center in Te-Implanted Alx Ga! _x As
H. Bemelmans, G. Borghs and G. Langouche
.................................................................141
♦Surface Science and Semiconductor Processing
F.W.Saňs
.......................................................................................................................147
Lithography for Manufacturing at
0.25
Micrometer and Below
H. J. Smith and M. L.
Schattenburg.................................................................................153
*Basic Aspects of Ion Implantation
E. Rimini
..........................................................................................................................167
Trends in Ion Implantation for Semiconductor and Optical Materials Research
J. M.
Poate,
D.
C. Jacobson
and
D. J. Eaglesham
..........................................................195
Orientation Phenomena in MeV Implants of
P
in Si
V. Raineri, G. Galvagno, F. Priolo and E.Rimini
...........................................................207
Deep Implants by Means of Channeling: Ion Distribution and Radiation Damage in
Angle Controlled N+ Implantation in Silicon
A. Gasparotto.A. Camera, S. Acco and
A. La Ferla
......................................................213
Dislocation Formation in Si Implanted at Elevated Temperature
J. R. Liefting, J. S. Custer,
R. J.
Schreutelkamp and
F.
W.
Saris
....................................219
Preparation and Characterization of Thin Film
Simox
Materials
A. Nejim and P. L. F. Hemment
.......................................................................................225
*Invited paper.
The Effect of Electronic Energy Loss on Epitaxial YBa2
Сиз О7
Thin Films After
Heavy Ion Irradiation and Annealing up to Room Temperature
S. Henke, B. Hensel, B.
Roas,
S.
Klaumünzer,
G. Saemann-Ischenko
.............................233
Structural
Study of The Epitaxial Realignment of Polycrystalline Si Films onto Si
Substrates
F.Benyaich, F. Priolo, E. Rimini,
С
Spinella
and P. Ward
...........................................239
*Plasma Immersion Ion Implantation: A Perspective
С
Yu andN. W. Cheung
..................................................................................................245
A Sheet Stress Measurement Technique Using Thin Films to Measure Stresses in
Inert-Gas Implanted Silicon
J. Yuan and]. W. Corbett
................................................................................................251
Plasma Etching Processes
R.
D Agostino
and
F.
Fracassi........................................................................................
257
Section
3:
Insulating
&
Metallic Layers
*Charge Trapping, Degradation and Wearout of Thin Dielectric Layers During
Electrical Stressing
M. M.
Heyns
and
Α. ν
Schwerin.......................................................................................279
Minority Carrier Lifetime Measurements After High Temperature
Pretreatment
M.
Dammann, T.
Stockmeier
and H. Baltes
.....................................................................299
*Copper-Based
Metallization
/.
Li,
S. Hong, S. W.
Russell
and J.
W.
Mayer
.................................................................305
Thermal
Stability of Ti-Mo and
Ti
-Си
Bilayer Thin Films on Alumina
J. Strane, J.
Li,
S. W.
Russell and
J.
W.
Mayer
................................................................321
Hyperfine Fields in Epitaxially Grown Co on GaAs
J. Dekoster, P.
Bélien,
Y.
Bruynseraede and G. Langouche
............................................327
Titanium Nitride Process Development
/.
M. Molarius andM. Orpana
........................................................................................331
*Materials Aspects and Implementation of Suicides for ULSI
K.
Маех
............................................................................................................................337
*Invited paper.
VIH
Ion
Beam Synthesis of Buried Iron Disilicide
K.
Radermacher,
S.
Mantl,
R. Apetz, C. Dieker and H.
Lüth..........................................363
Diffusion in Cobalt Suicide
During
Suicide Formation
C.M.ComrieandJ.E.McLeod
......................................................................................369
Formation
of Germanides
by Rapid Thermal Annealing and Their Applications in
Advanced MOSFET Processes
S.P.AshburnandM.C.Oztürk.......................................................................................375
Section
4:
Diffusion
&
Crystal Growth
*Diffusion in Crystalline Silicon and Germanium
-
The State of the Art in Brief
W.Frank
..........................................................................................................................383
Symmetry Methods in Diffusion
D.T.Wu
...........................................................................................................................403
Diffusion of Gold in Sputtered Amorphous Silicon
A. V. Wagner, D. T. WuandF. Spaepen
..........................................................................409
Dopant Diffusion and Point Defects in Silicon During Silicidation
ƒ.
W. Honeycutt and G. A. Rozgonyi
................................................................................415
Lateral Diffusion Couples and Their Contribution to Understanding Thin Film
Reactions
B.Blanpain
......................................................................................................................421
♦Diffusion and Defects in Amorphous Silicon
S.
Coffa
and J. M.
Poate
..................................................................................................427
EPR.
Study of Defects Produced by MeV Ion Implantation into Silicon
L. T. SealyandR.
С
Barkliè...........................................................................................
445
Vacancy Character of Damage Zones in Ion-Irradiated Silicon
P. J. Simpson,
M. Vos,
С.
Wu, I. V. Mitchell and P. J.
Schultz.......................................451
Multiple Amorphous States in Ion Implanted Semiconductors (Si and InP)
H. Bernas,
M.O.Ruault and Ping Zheng
........................................................................459
♦Invited paper.
їх
*The Mechanism of Solid Phase Epitaxy
M.J.Aziz
..........................................................................................................................465
The Amorphous Side of Solid Phase Epitaxy
J.S. Custer
.......................................................................................................................477
*Metal-Enhanced Growth of Silicon
F
.
Spaepen, E
Nygren
and A. V. Wagner
.........................................................................483
♦Ion-Assisted Phase Transitions in Silicon
F. Priolo and
A. Battaglia
...............................................................................................501
Ion-Assisted Nucleation in Amorphous Silicon
A. Battaglia,
С.
Spinella,
F.
Priolo
and S. U.
Campisano
..............................................523
List of
Participants
...........................................................................................................529
Index
................................................................................................................................535
*Invited paper.
|
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| spelling | Crucial issues in semiconductor materials and processing technologies [proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1 - 13 July 1991] ed. by S. Coffa ... Dordrecht u.a. Kluwer 1992 XIX, 538 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier NATO: [Nato ASI series / E] 222 Semiconductors Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content (DE-588)1071861417 Konferenzschrift gnd-content Halbleiter (DE-588)4022993-2 s DE-604 Halbleitertechnologie (DE-588)4158814-9 s Coffa, S. Sonstige oth E] NATO: [Nato ASI series 222 (DE-604)BV000007015 222 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006286997&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Crucial issues in semiconductor materials and processing technologies [proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1 - 13 July 1991] Semiconductors Congresses Halbleiter (DE-588)4022993-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4158814-9 (DE-588)4143413-4 (DE-588)1071861417 |
| title | Crucial issues in semiconductor materials and processing technologies [proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1 - 13 July 1991] |
| title_auth | Crucial issues in semiconductor materials and processing technologies [proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1 - 13 July 1991] |
| title_exact_search | Crucial issues in semiconductor materials and processing technologies [proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1 - 13 July 1991] |
| title_full | Crucial issues in semiconductor materials and processing technologies [proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1 - 13 July 1991] ed. by S. Coffa ... |
| title_fullStr | Crucial issues in semiconductor materials and processing technologies [proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1 - 13 July 1991] ed. by S. Coffa ... |
| title_full_unstemmed | Crucial issues in semiconductor materials and processing technologies [proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1 - 13 July 1991] ed. by S. Coffa ... |
| title_short | Crucial issues in semiconductor materials and processing technologies |
| title_sort | crucial issues in semiconductor materials and processing technologies proceedings of the nato advanced study institute on semiconductor materials and processing technologies erice italy 1 13 july 1991 |
| title_sub | [proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, 1 - 13 July 1991] |
| topic | Semiconductors Congresses Halbleiter (DE-588)4022993-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| topic_facet | Semiconductors Congresses Halbleiter Halbleitertechnologie Aufsatzsammlung Konferenzschrift |
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| volume_link | (DE-604)BV000007015 |
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