Semiconductor devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York u.a.
McGraw-Hill u.a.
1989
|
| Schriftenreihe: | Electronics and electronic circuits
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XX, 402 S. |
| ISBN: | 0070727007 |
Internformat
MARC
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Datensatz im Suchindex
| _version_ | 1804123693116293120 |
|---|---|
| adam_text | CONTENTS
Preface xv
Introduction xix
Chapter 1 Physical Systems l
1 1 Energy and States 1
1 2 Classical Discontinuous Energy System 4
1 3 Classical Dynamic System 5
1 4 Quantum Systems—Introductory Survey 7
The Bohr atom 7
The hydrogen atom 8
Shell structure of the atom 9
The Schroedinger equation 12
1 5 Hydrogenoid Atom 14
1 6 Summary 21
Appendix 1A Atomic Structure and Quantum
Physics—An Introductory Survey 22
1A 1 The Bohr Atom 22
1A 2 The Schroedinger Equation 24
Physical meaning of the state function 26
Tunneling 26
Problems 28
References 30
Additional Reading 30
Chapter 2 Atoms in Crystals 31
2 1 The Linear Crystal—Composite Potential Distribution
and Band Theory 31
Composite potential distribution 35
Energy bands 37
2 2 Conductors 39
2 3 Insulators—Energy in Crystals 41
X CONTENTS
Interaction between energy and crystals 42
2 4 Semiconductors—Electrons and Holes 45
Electrons and holes 46
Generation and recombination 47
2 5 Extrinsic Semiconductors 48
Group V impurities 48
Group III impurities 50
2 6 Summary 52
Conductors and insulators 53
Intrinsic semiconductors 53
Extrinsic semiconductors 54
Problems 54
References 55
Additional Reading 55
Chapter 3 Thermal Equilibrium 56
3 1 Electron and Holes—Effective Mass 56
Conduction electrons 57
Valence electrons 59
3 2 Fermi-Dirac Statistics 61
3 3 Equilibrium Carrier Concentration 66
Intrinsic semiconductors 67
N-type semiconductors 69
P-type semiconductors 70
3 4 Location of the Fermi Levels 71
3 5 Summary 77
Problems 78
References 80
Chapter 4 Carrier Motion 81
4 1 Random Thermal Motion 81
4 2 Drift 82
Sheet resistance 91
4 3 Diffusion 92
4 4 Generation and Recombination 94
Nonequilibrium conditions 94
Low-level injection 97
Direct and indirect transition mechanisms 98
High-level injection 103
4 5 The Equation of Continuity 104
4 6 Summary 106
Appendix 4A Diffusion 107
Problems 109
References 110
Additional Reading 111
CONTENTS Xi
Chapter 5 Fabrication Technology 112
5 1 Wafer Preparation 113
Crystal growing 113
Wafer slicing and shaping 117
5 2 Epitaxy 118
Vapor phase epitaxy 118
Liquid phase epitaxy 120
Molecular beam epitaxy 121
5 3 Oxidation and Chemical Vapor Deposition 123
Oxidation 123
Chemical vapor deposition 131
5 4 The Photolithographic Step 131
The photomask 131
The photoresist mask 132
Silicon dioxide and other insulator masks 134
5 5 Localized Doping—Diffusion and Ion Implantation 137
Diffusion 137
Quantitative analysis 141
Ion implantation 149
5 6 Electrode Deposition 152
Sputtering 153
5 7 Integrated Circuit Fabrication—An Introduction 154
Device isolation 155
Circuit design for ICs 157
5 8 Measurement and Test Techniques 157
Resistivity 158
Doping profile 159
Junction depth 160
Electron microscope and optical techniques 160
Hall effect 162
Carrier lifetime 163
The Haynes-Shockley experiment 165
5 9 Summary 167
Appendix 5A Oxidation Dynamics 168
Problems 170
References 171
Additional Reading 172
Chapter 6 PN Junction 173
6 1 PN Diode Structure 173
6 2 The Contact Potential 177
6 3 Quantitative Junction Analysis at Equilibrium 182
Abrupt junction 183
Linearly graded junction 187
6 4 The Junction under Reverse Bias 189
6 5 Quantitative Junction Analysis at Reverse Bias 192
Depletion region parameter computation 192
Small-signal parameter computation 193
xii
CONTENTS
Breakdown voltage computation 198
6 6 The PN Junction under Forward Bias 199
6 7 Quantitative Junction Analysis at Forward Bias 203
6 8 Small-Signal Parameters at Forward Bias 208
Dynamic forward bias resistance computation 209
Diffusion capacitance computation 209
6 9 Recombination Current 211
6 10 Heterojunctions 215
6 11 Summary 218
Appendix 6A Avalanche Breakdown 219
Problems 222
References 228
Additional Reading 228
Chapter 7 Metal-Semiconductor Junction 229
7 1 Metal-Vacuum Interface—Thermionic Effect 229
7 2 Quantitative Analysis of the Thermionic Effect 233
7 3 The M-S Junction at Equilibrium 234
7 4 The M-S Junction under Reverse Bias 240
7 5 The M-S Junction under Forward Bias 242
7 6 Quantitative Analysis of the Forward Biased M-S Junction 244
7 7 Schottky Diode Small-Signal Parameters 247
7 8 The Ohmic Contact 248
7 9 Summary 251
Problems 252
References 254
Additional Reading 254
Chapter 8 Junction Field-Effect Transistors 255
8 1 J-FET Structure 255
8 2 J-FET Principle of Operation 257
8 3 Quantitative Analysis of the J-FET 261
8 4 Signal Transfer—Gain 264
8 5 Small-Signal Linear Equivalent Circuit 266
Mutual conductance (or transconductance) 267
Output admittance 267
Saturation region parameters 268
Linear region parameters 268
Capacitances 269
Leakage resistances 270
Service and drain ohmic resistances 270
Channel length modulation 271
8 6 J-FET Fabrication 273
Fabrication sequence outline 274
8 7 The MESFET 276
CONTENTS XIÜ
8 8 Summary 279
Problems 280
References 282
Additional Reading 283
Chapter 9 The MOSFET 284
9 1 MOSFET Structure 284
Fabrication outline 285
9 2 MOS Capacitor Band Diagrams 289
Accumulation (or enhancement) 291
Depletion 292
Inversion 293
Summary 297
9 3 Quantitative Analysis of the MOS Gate Capacitance 299
Accumulation 300
Depletion 300
Inversion 301
9 4 Quantitative Analysis of the MOSFET 1/V Characteristics 303
Threshold voltage 304
Drain current 305
Approximate formulas 306
9 5 MOSFET Small-Signal Linear Equivalent Circuit 309
Linear mode 309
Other modes 309
9 6 The Flat Band Voltage 313
Charge trapping in the oxide 314
Effect of flat band voltage on MOS capacitance 317
Effect of flat band voltage on threshold 318
9 7 Depletion MOSFETs 318
9 8 Complementary MOSFETs—The CMOS technology 321
CMOS fabrication 322
9 9 Summary 327
Problems 329
References 332
Additional Reading 332
Chapter 10 The Bipolar Junction Transistor 333
10 1 BJT Structure 333
10 2 BJT Band Diagrams—The Transistor Effect 337
10 3 The BJT in the Active Mode—Quantitative Analysis 342
Minority carrier concentrations 343
Electron and hole current components 346
Terminal currents 347
Transistor effect parameters 348
10 4 BJT Configurations and Small-Signal Parameters 351
10 5 Small-Signal Equivalent Circuits and Frequency
Response 354
XIV
CONTENTS
10 6 Additional Phenomena—Heterojunction BJT 358
Base width modulation 358
Base spreading resistance and current crowding 359
High injection effects 361
Graded junctions 361
Heterojunction BJT 362
Real characteristics 362
10 7 The Ebers-Moll Model 365
10 8 Saturation, Cutoff, and Inverted Modes 368
Saturation mode 368
Cutoff mode 372
Inverted mode 375
10 9 The BJT as a Switch 375
Turn-on time 377
Turn-off time 378
10 10 Collector Breakdown 381
10 11 The Silicon Controlled Rectifier 383
10 12 Summary 387
Appendix 10A Transit Time 389
Problems 389
Additional Reading 393
|
| any_adam_object | 1 |
| author | Zambuto, Mauro |
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| dewey-full | 621.36/6 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.36/6 |
| dewey-search | 621.36/6 |
| dewey-sort | 3621.36 16 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| institution | BVB |
| isbn | 0070727007 |
| language | English |
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| physical | XX, 402 S. |
| publishDate | 1989 |
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| publisher | McGraw-Hill u.a. |
| record_format | marc |
| series2 | Electronics and electronic circuits |
| spelling | Zambuto, Mauro Verfasser aut Semiconductor devices New York u.a. McGraw-Hill u.a. 1989 XX, 402 S. txt rdacontent n rdamedia nc rdacarrier Electronics and electronic circuits Halfgeleiders gtt Semiconductors Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s DE-604 HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006152221&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
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| subject_GND | (DE-588)4113826-0 |
| title | Semiconductor devices |
| title_auth | Semiconductor devices |
| title_exact_search | Semiconductor devices |
| title_full | Semiconductor devices |
| title_fullStr | Semiconductor devices |
| title_full_unstemmed | Semiconductor devices |
| title_short | Semiconductor devices |
| title_sort | semiconductor devices |
| topic | Halfgeleiders gtt Semiconductors Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Halfgeleiders Semiconductors Halbleiterbauelement |
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