Amorphous silicon semiconductors - pure and hydrogenated: [Symposium on Amorphous Silicon Semiconductors] ; symposium held April 21 - 24, 1987, Anaheim, Calif., USA
Gespeichert in:
| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | Undetermined |
| Veröffentlicht: |
Pittsburgh, Pa.
1987
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| Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
95 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXIII, 670 S. |
| ISBN: | 0931837626 |
Internformat
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| 245 | 1 | 0 | |a Amorphous silicon semiconductors - pure and hydrogenated |b [Symposium on Amorphous Silicon Semiconductors] ; symposium held April 21 - 24, 1987, Anaheim, Calif., USA |c eds.: A. Madan ... |
| 264 | 1 | |a Pittsburgh, Pa. |c 1987 | |
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS VOLUME 95 AMORPHOUS
SILICON SEMICONDUCTORS* PURE AND HYDROGENATED SYMPOSIUM HELD APRIL
21-24, 1987, ANAHEIM, CALIFORNIA, U.S.A. EDITORS: A. MADAN GLASSTECH
SOLAR, INC., WHEATRIDGE, COLORADO, U.S.A. M. THOMPSON XEROX PARC, PALO
ALTO, CALIFORNIA, U.S.A. D. ADLER MASSACHUSETTS INSTITUTE OF TECHNOLOGY,
CAMBRIDGE, MASSACHUSETTS, U.S.A. Y. HAMAKAWA OSAKA UNIVERSITY, OSAKA,
JAPAN TFCHN SCKE INFORMATIONSBLBLLOTHEK IMIRIS1 MATERIALS RESEARCH
SOCIETY PITTSBURGH, PENNSYLVANIA * I *!O ~ ;~! **! CONTENTS PREFACE
PART I: ELECTRONIC PROPERTIES *ELECTRONIC STATES IN AMORPHOUS SOLIDS,
LIQUIDS, AND ALLOYS 3 Y. BAR-YAM, D. ADLER, AND J.D. JOANNOPOULOS
*HYDROGEN DIFFUSION AND THERMAL EQUILIBRIUM OF ELECTRONIC STATES IN
A-SI:H 13 R.A. STREET DEFECT DYNAMICS AND THE PROPERTIES OF AMORPHOUS
SILICON- A NEW PERSPECTIVE 23 S.T. PANTELIDES THE ROLE OF LATTICE
RELAXATION IN THE COMPETITION BETWEEN OPTICAL AND THERMAL TRANSITIONS
FROM GAP STATES IN HYDROGENATED AMORPHOUS SILICON 33 A.V. GELATOS, J.D.
COHEN, AND J.P. HARBISON *SUBSTITUTIONS AND INTERSTITIAL DOPING OF
AMORPHOUS SILICON NITRIDE 39 W.E. SPEAR, B. DUNNETT, AND P.G. LECOMBER
STATES IN THE GAP OF DOPED AND UNDOPED A-SI:H STUDIED BY PHOTOMODULATION
SPECTROSCOPY 51 T.X. ZHOU, Z. VARDENY, AND J. TAUC THE EFFECTS OF
COORDINATION AND LOCAL DISORDER ON IMPURITY STATES IN HYDROGENATED
AMORPHOUS SILICON 57 C.S. NICHOLS AND C.Y. FONG CHARGE CARRIER
RELAXATION AFTER SUBBANDGAP EXCITATION IN DOPED A-SI:H 65 A. WERNER AND
M. KUNST CAPACITANCE STUDIES OF ION-IMPLANTED N-TYPE HYDROGENATED
AMORPHOUS SILICON 71 C.E. MICHELSON, J.D. COHEN, AND J.P. HARBISON
APPLICATION OF A LOW FREQUENCY TECHNIQUE TO THE STUDY OF AMORPHOUS
MATERIALS 77 C. PICKUP, R.W. COCHRANE, J.L. BREBNER, AND G. PERLUZZO
DEEP STATES IN A-SI:H - CHANGES WITH DOPING AND APPLIED STRESS 83 J.
KOCKA AND M. VANECEK *INVITED PAPER A STUDY OF THE STATE DISTRIBUTION IN
VARIOUS A-SI:H MATERIALS BY A NEW CAPACITANCE METHOD 89 I. BALBERG
TIME-OF-FLIGHT MEASUREMENTS IN A~SI:H BETWEEN ROOM TEMPERATURE AND 13
0C 9 5 D.S. SHEN, S. ALJISHI, Z.E. SMITH, J.P. CONDE, V. CHU, AND S.
WAGNER DRIFT MOBILITY MEASUREMENTS UNDER SINGLE AND DOUBLE INJECTION IN
A-SI:H 101 L. XU, G. WINBORNE, M. SILVER, AND V. CANNELLA THEORETICAL
ANALYSIS OF SWEEP-OUT EXPERIMENTS IN DOPED HYDROGENATED AMORPHOUS
SILICON FILMS 107 M. SILVER, H.M. BRANZ, AND D. ADLER EXPERIMENTAL STUDY
OF SWEEP-OUT IN N-TYPE HYDROGENATED AMORPHOUS SILICON 113 G. WINBORNE,
L. XU, M. SILVER, AND H.M. BRANZ CHARGE CARRIER RECOMBINATION IN DOPED
A-SI:H STUDIED BY CONTACTLESS PHOTOCONDUCTIVITY MEASUREMENTS 119 A.
WERNER AND M. KUNST PHOTOCONDUCTIVITY DECAY IN AMORPHOUS SEMICONDUCTORS
125 W. PICKIN, D. MENDOZA, AND J.C. ALONSO PHOSPHORUS AND BORON DOPING
OF A-SI:H: EFFECTS OF DEPOSITION TEMPERATURE 131 M.J.M. PRUPPERS, K.H.M.
MAESSEN, J. BEZEMER, F.H.P.M. HABRAKEN, AND W.F. VAN DER WEG EFFECT OF
LOW LEVEL DOPING OF BORON AND PHOSPHORUS ON THE PROPERTIES OF AMORPHOUS
SILICON FILMS 137 N.T. TRAN, K.A. EPSTEIN, D.P. GRIMMER, AND G.D.
VERNSTROM METHOD FOR THE REDUCTION OF PHOTOTHERMAL DEFLECTION
SPECTROSCOPY DATA TAKEN ON AMORPHOUS SILICON (A-SI:H) 145 S. WIEDEMAN,
M.S. BENNETT, AND J.L. NEWTON PART II: STRUCTURE NMR INVESTIGATION OF
THE LOCAL DOPANT-HYDROGEN CONFIGURATION IN AMORPHOUS SILICON 153 S.E.
READY AND J.B. BOYCE POSSIBLE DIFFUSION OF MOLECULAR HYDROGEN ALONG
MICRO- VOIDS IN DEVICE-QUALITY A-SI:H 159 E.J. VANDERHEIDEN, W.D.
OHLSEN, AND P.C. TAYLOR HYDROGEN DIFFUSION IN UNDOPED A-SI:H 165 S.F.
CHOU, R. SCHWARZ, Y. OKADA, D. SLOBODIN, AND S. WAGNER HYDROGEN
MICROSTRUCTURE IN AMORPHOUS SEMICONDUCTOR S 171 K.K. GLEASON, M.A.
PETRICH, AND J.A. REIMER A STRUCTURAL ANALYSIS OF THIN AMORPHOUS SILICON
FILMS 177 S. ERKOC, T. HALICIOGLU, AND W.A. TILLER POROUS MORPHOLOGY AND
OXIDATION KINETICS IN A-SI:H RF SPUTTERED BY HE/H2 183 J. SHINAR, R.
SHINAR, S. MITRA, M.L. ALBERS, H.R. SHANKS, AND T.D. MOUSTAKAS
COMPOSITION OXIDATION AND CHEMICAL ETCHING PROPERTIES OF A NEW AMORPHOUS
SILICON-BORON THIN FILM 191 B.Y. TONG, S.K. WONG, J. YAO, W.M. LAU, N.
DU, AND P.K. JOHN QUANTITATIVE MEASUREMENT OF HYDROGEN CONTENT IN A-SI:H
BY AR + EXCITED AUGER 197 M.H. FARIAS, G.A. HIRATA, L. COTA-ARAIZA, D.H.
GALVAN, AND R. ASOMOZA HYDROGEN CONTENT AND THE OPTICAL BANDGAP IN
AMORPHOUS SILICON 201 K.M.H. MAESSEN, M.J.M. PRUPPERS, J. BEZEMER,
F.H.P.M. HABRAKEN, AND W.F. VAN DER WEG PART III: GROWTH *IDENTIFICATION
OF CHEMICAL GROWTH MECHANISMS IN AMORPHOUS SEMICONDUCTORS 2 09 J.A.
REIMER, M.J. MCCARTHY, K.K. GLEASON, AND P.W. MORRISON, JR. FILM GROWTH
MECHANISMS OF AMORPHOUS SILICON IN DIODE AND TRIODE GLOW DISCHARGE
SYSTEMS 219 C.C. TSAI, J.G. SHAW, B. WACKER, AND J.C. KNIGHTS *GROWTH OF
AMORPHOUS AND CRYSTALLINE SILICON BY HR-CVD (HYDROGEN RADICAL ENHANCED
CVD) 225 N. SHIBATA, K. FUKUDA, H. OHTOSHI, J. HANNA, S. ODA, AND I.
SHIMIZU AMORPHOUS SILICON DEPOSITION DIAGNOSTICS USING COHERENT
ANTI-STOKES RAMAN SPECTROSCOPY 237 Y.H. SHING, J.W. PERRY, D.R. COULTER,
AND G. RADHAKRISHNAN THERMAL EQUILIBRATION AND GROWTH OF DOPED AMORPHOUS
SILICON 243 J. KAKALIOS, R.A. STREET, C.C. TSAI, AND R. WEISFIELD
INFLUENCE OF PLASMA EXCITATION FREQUENCY ON DEPOSITION RATE AND ON FILM
PROPERTIES FOR HYDROGENATED AMORPHOUS SILICON 249 H. CURTINS, N. WYRSCH,
M. FAVRE, K. PRASAD, M. BRECHET, AND A.V. SHAH *INVITED PAPER
PREPARATION AND PROPERTIES OF HYDROGENATED AMORPHOUS SILICON PRODUCED BY
PLASMA-ENHANCED CHEMICAL VAPOR DECOMPOSITION OF SILANE 255 K.L. TOKUDA,
D. ADLER, AND R. REIF HIGH QUALITY AMORPHOUS SILICON PREPARED BY
CATALYTIC CHEMICAL VAPOR DEPOSITION (CTL-CVD) METHOD 261 H. MATSUMURA
DEPOSITION OF A-SINX FILMS BY ARF LASER INDUCED CVD AS DIAGNOSED BY
OPTICAL EMISSION SPECTROSCOPY 267 S. NISHIKAWA, H. MATSUHASHI, T.
ISHIDA, S. OHNO, AND S. USHIO INTERACTION OF REACTIVE SPECIES OBTAINED
BY G-D SILANE DECOMPOSITION WITH SI(111) AND A-SI:H SURFACES 273 S.A.
CRUZ AND V.M. MENDEZ-ROSALES PART IV: ALLOYS *COMPARISON OF PROPERTIES
OF A-SI!_ X GE X :H AND A-SI!_ X GE X :H:F 281 K.D. MACKENZIE AND W.
PAUL PHOTOLUMINESCENCE IN HYDROGENATED SILICON-GERMANIUM ALLOYS 29 3 R.
RANGANATHAN, M. GAL, J.M. VINER, AND P.C. TAYLOR IR-SPECTROSCOPY AND
ELECTRONIC PROPERTIES OF RF MAGNETRON SPUTTERED A-SIA:H(A=C,GE) FILMS
299 H. RUBEL AND B. SCHRODER EXAFS STUDY OF A-SII- X GE X :H, A-SII_ X C
X :H AND A-SI]__ X N X :H AT THE SI K-EDGE 305 A. FILIPPONI, P. FIORINI,
F. EVANGELISTI, AND S. MOBILIO HIGH-QUALITY A-SI-BASED ALLOYS: A-SIGE
FILMS FABRICATED IN A SUPER CHAMBER AND SUPERLATTICE STRUCTURE A-SI
FILMS PREPARED BY A PHOTO-CVD METHOD 311 S. TSUDA, H. HAKU, H. TARUI, T.
MATSUYAMA, K. SAYAMA, Y. NAKASHIMA, S. NAKANO, M. OHNISHI, AND Y. KUWANO
COMPARATIVE STUDY OF STRUCTURE AND HYDROGEN INCOR- PORATION IN GLOW
DISCHARGE A-SI:C:H AND A-SI:N:H ALLOYS 317 W. BEYER, H. WAGNER, AND H.
MELL RECOMBINATION AND ELECTRONIC TRANSPORT IN LOW-GAP A-SI,GE:H,F
ALLOYS 323 S. ALJISHI, D.S. SHEN, V. CHU, Z.E. SMITH, J.P. CONDE, J.
KOLODZEY, D. SLOBODIN, AND S. WAGNER *INVITED PAPER CARBON LOCAL BONDING
CONFIGURATIONS IN AMORPHOUS HYDROGENATED SILICON-CARBON ALLOYS 329 M.A.
PETRICH AND J.A. REIMER PREDICTIONS ON THE PHYSICAL PROPERTIES OF
AMORPHOUS CARBON-TIN SEMICONDUCTING ALLOYS 335 P. MPAWENAYO ESTIMATION
OF DEFECT STATE DENSITIES FROM BULK PHOTOELECTRONIC PROPERTIES OF
A-SI,GE:H ALLOYS 341 G.N. PARSONS AND G. LUCOVSKY STRUCTURAL, OPTICAL,
AND ELECTRICAL PROPERTIES OF AMORPHOUS HYDROGENATED CARBON NITRIDE 347
H-X. HAN AND B.J. FELDMAN TEMPERATURE DEPENDENCE OF OPTICAL PROPERTIES
AND MINORITY CARRIER DIFFUSION LENGTH IN A-SIGE:H,F 353 R. SCHWARZ, K.
DIETRICH, S. GOEDECKER, J. KOLODZEY, D. SLOBODIN, AND S. WAGNER WHY THE
PHOTOCONDUCTIVITY DECREASES IN A-SIC:H AND A-SIGE:H WHEN THE AMOUNT OF
ALLOYING INCREASES 361 A.H. MAHAN, P. RABOISSON, P. MENNA, AND R. TSU
PART V: MULTILAYER STRUCTURES AND INTERFACES ELECTRONIC TRANSPORT
PROPERTIES OF A-SI:H,F/A-SI,GE:H,F SUPERLATTICES 369 J.P. CONDE, S.
ALJISHI, D.S. SHEN, V. CHU, Z.E. SMITH, AND S. WAGNER SCHOTTKY BARRIERS
ON A-SI:H,F/A-SI,GE:H,F SUPERLATTICES 375 V. CHU, J.P. CONDE, S.
ALJISHI, D.S. SHEN, Z.E. SMITH, AND S. WAGNER CARRIER TRANSPORT IN
COMPOSITIONALLY MODULATED A-SI:H BASED SUPERLATTICE STRUCTURES 3 81 C.R.
WRONSKI, P.D. PERSANS, AND B. ABELES HIGH CONDUCTIVE A-SI:H/A-SIC:K:F
SUPER LATTICE PREPARED BY A CHEMICALLY CONTROLLED METHOD 3 87 H.
KOINUMA, M. KAWASAKI, AND K. FUEKI DETERMINATION OF THE DENSITY OF GAP
STATES IN A-SI:H FROM STUDIES OF SEMICONDUCTOR/OXIDE MULTILAYER FILMS 39
3 R.B. JONES AND G. MODDEL *METAL/HYDROGEHATED AMORPHOUS SILICON
INTERFACES 399 J. KANICKI DETERMINATION OF INTERFACE AND SURFACE
STRUCTURE DURING THE GROWTH OF A-SI:H-BASED HETEROSTRUCTURES 413 R.W.
COLLINS AND J.M. CAVESE *INVITED PAPER PART VI: THIN FILM TRANSISTORS
*THE CHARACTERISTICS OF AMORPHOUS SILICON TFT AND ITS APPLICATION IN
LIQUID CRYSTAL DISPLAY 421 T. CHIKAMURA, S. HOTTA, AND S. NAGATA LARGE
SCALE AND LARGE AREA AMORPHOUS SILICON THIN FILM TRANSISTOR ARRAYS FOR
ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS 431 H. MIKI, S. KAWAMOTO, T.
HORIKAWA, T. MAEJIMA, H. SAKAMOTO, M. HAYAMA, AND Y. ONISHI *A-SI:H TFT
DRIVEN LINEAR IMAGE SENSOR 437 H. ITO, T. SUZUKI, M. NOBUE, Y.
NISHIHARA, Y. SAKAI, T. OZAWA, AND S. TOMIYAMA DYNAMIC CHARACTERISTICS
OF AMORPHOUS SILICON THIN FILM TRANSISTORS 445 C. VAN BERKEL, J.R.
HUGHES, AND M.J. POWELL INTERFACE PASSIVATION IN AMORPHOUS SILICON TFTS
BY VARIOUS GATE DIELECTRIC MATERIALS 451 R.C. FRYE, C.C. WONG, AND C.
KORNFELD PHYSICS OF NOVEL AMORPHOUS SILICON HIGH-VOLTAGE TRANSISTOR 457
M. HACK, H. TUAN, J. SHAW, M. SHUR, AND P. YAP A-SI MOS FET WITH
NATIVE-OXIDE GATE GROWN BY NORMAL- PRESSURE AND LOW-TEMPERATURE
THERMAL-OXIDATION METHOD 46 3 H-Y. ZHANG AND M. MATSUMURA AMORPHOUS
SILICON THIN FILM TRANSISTOR ARRAY TECHNOLOGY: APPLICATIONS IN PRINTING
AND DOCUMENT SCANNING 469 R.L. WEISFIELD, B.C. TUAN, L. FENNELL, AND
M.J. THOMPSON RADIATIVE RECOMBINATION IN A-SI:H-FETS 475 R. CARIUS THE
INFLUENCE OF BULK AND INTERFACE GAP STATES ON THE PERFORMANCE OF
AMORPHOUS SILICON THIN FILM TRANSISTORS 481 M. BOHM, J. HOUGHTON AND S.
SALAMON UNDOPED AMORPHOUS SILICON TFTS WITH N-CHANNEL OR P-CHANNEL
DEVICE OPERATION FOR THE DETERMINATION OF THE GAP STATES DISTRIBUTION
489 R.E.I. SCHROPP AND J.F. VERWEY PART VII: SOLAR CELLS *PROGRESS IN
TANDEM PV POWER MODULES 497 C.F. GAY AND K.W. MITCHELL *PROPERTIES OF
A-SIGE AND APPLICATION TO STACKED SOLAR CELL 5 07 H. ITOZAKI AND N.
FUJITA *INVITED PAPER *PHYSICS OF HIGH EFFICIENCY MULTIJUNCTION SOLAR
CELLS 517 J. YANG, R. ROSS, R. MOHR, AND J.P. FOURNIER DETERMINATION OF
THE EFFICIENCY ENHANCEMENT DUE TO SCATTERING FROM ROUGH TCO CONTACT FOR
A-SI:H P-I-N SOLAR CELLS 527 C. WALKER, R.E. HOLLINGSWORTH, AND A. MADAN
RADIATION RESISTANCE OF AMORPHOUS SILICON ALLOY PHOTO- VOLTAIC CELLS 533
J.R. WOODYARD AND J.J. HANAK EFFECTS OF SILICON: CARBON P + LAYER
INTERFACES ON SOLAR CELLS 539 F.R. JEFFREY, G.D. VERNSTROM, M.F. WEBER,
AND J.R. GILBERT EFFECTS OF CARBON GRADING AT THE P/I INTERFACE ON THE
OPEN CIRCUIT VOLTAGE OF P-I-N AND N-I-P AMORPHOUS SILICON SOLAR CELLS
545 N.T. TRAN, F.R. JEFFREY, AND D.J. OLSEN PART VIII: PHOTOVOLTAIC
INSTABILITIES *STABILITY IN AMORPHOUS SILICON 551 Z.E. SMITH AND S.
WAGNER STABLE DEFECTS AS METASTABLE DEFECTS IN A-SI:H 561 D. REDFIELD
CHARACTERIZATION OF HEAVILY BORON-DOPED A-SI:H FILMS DEPOSITED AT LOW
SUBSTRATE TEMPERATURES 565 J. JANG, S.C. KIM, D.B. LEE, AND C. LEE
CHANGES OF DRIFT MOBILITY IN A-SI:H WITH LIGHT EXPOSURE AND DOPING 571
J. TAKADA AND H. FRITZSCHE AN INVESTIGATION OF PHOTO-INDUCED DEGRADATION
BY MEANS OF PHOTOTHERMAL DEFLECTION SPECTROSCOPY 577 M.S. BENNETT, S.
WIEDEMAN, J.L. NEWTON, AND K. RAJ AN DEGRADATION BEHAVIOR OF A-SI:H PIN
SOLAR CELLS WITH INTENTIONALLY O-CONTAMINATED I-LAYERS 583 W. KRIIHLER
AND E. GIINZEL LIGHT INDUCED CHANGE IN A-SI:H P-I-N SOLAR CELLS UNDER
VARIOUS LIGHT SOAKING CONDITIONS 589 H. SAKAI, T. IHARA, 0. NABETA, T.
YOSHIDA, K. MARUYAMA, Y. ICHIKAWA, AND Y. UCHIDA CHANGES OF IR
VIBRATIONAL ABSORPTION BY LIGHT SOAKING IN HYDROGENATED AMORPHOUS
SILICON 595 J. JANG, S.C. PARK, C.G. LEE, S.C. KIM, C. LEE, AND J.K.
YOON *INVITED PAPER LIGHT-INDUCED DEGRADATION AND ANNEALING BEHAVIOUR OF
AMORPHOUS SILICON: A COMPARISON OF FILMS AND DEVICES 601 M.S. BENNETT,
S. WIEDEMAN, K. RAJ AN, AND M. SMOOT PART IX: DEVICES AND APPLICATIONS
AMORPHOUS SILICON-CARBIDE MULTILAYERED VISIBLE-LIGHT EMITTING DIODE 6 09
D. KRUANGAM, M. DEGUCHI, Y. HATTORI, T. TOYAMA, H. OKAMOTO, AND Y.
HAMAKAWA AMORPHOUS SILICON ALLOY PUNCH-THROUGH DIODES FOR DISPLAY
APPLICATIONS 615 W. DEN BOER, S. GUHA, A. KAWASAKI, AND Z. YANIV
HETEROJUNCTION BIPOLAR TRANSISTORS (HBT) WITH A-SI:H OR YC-SI EMITTER
621 J. SYMONS, J. NIJS, J. VANHELLEMONT, K. BAERT, H. MICHIEL, G.
WILLEKE, W. VANDERVORST, AND R. MERTENS BINARY SYNAPTIC CONNECTIONS
BASED ON MEMORY SWITCHING IN A-SI:H FOR ARTIFICIAL NEURAL NETWORKS 627
A.P. THAKOOR, J.L. LAMB, A. MOOPENN, AND S.K. KHANNA A HIGH SPEED HIGH
RESOLUTION CONTACT LINE IMAGER USING AMORPHOUS SILICON ALLOY P-I-N
DIODES 633 L. SWARTZ, K. KITAMURA, M. VIJAN, J. MCGILL, V. CANNELLA, AND
Z. YANIV TRANSIENT PHOTORESPONSE OF AMORPHOUS SURFACE P-I-N DIODES 639
P.P. DEIMEL, G. MULLER.AND K. BAUMEISTER QUANTUM EFFECT DEVICE USING
DISORDERED SURFACE IN DOPED SI NEAR THE METAL-NONMETAL TRANSITION 645 Y.
OCHIAI, R. YOSHIZAKI, AND E. MATSUURA PART X: ELECTROPHOTOGRAPHY THE
PROPERTIES OF MICROCRYSTALLINE AND AMORPHOUS SILICON ELECTRON BLOCKING
LAYERS IN A-SI ALLOY PHOTORECEPTORS 653 A.G. JOHNCOCK, S.J. HUDGENS, AND
S. GUHA HIGH DEPOSITION RATE, THICK A-SI FILMS FOR ELECTRO- PHOTOGRAPHIC
APPLICATIONS 659 J. DEL CUETO, B. VON ROEDERN, AND A. MADAN AUTHOR INDEX
6 65 SUBJECT INDEX 6 69
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| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV009230297 |
| classification_rvk | UD 8400 |
| ctrlnum | (OCoLC)632661944 (DE-599)BVBBV009230297 |
| discipline | Physik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1987 Anaheim Calif. gnd-content |
| genre_facet | Konferenzschrift 1987 Anaheim Calif. |
| id | DE-604.BV009230297 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T17:33:31Z |
| institution | BVB |
| institution_GND | (DE-588)5026057-1 |
| isbn | 0931837626 |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006138790 |
| oclc_num | 632661944 |
| open_access_boolean | |
| owner | DE-29T DE-703 DE-11 |
| owner_facet | DE-29T DE-703 DE-11 |
| physical | XXIII, 670 S. |
| publishDate | 1987 |
| publishDateSearch | 1987 |
| publishDateSort | 1987 |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Amorphous silicon semiconductors - pure and hydrogenated [Symposium on Amorphous Silicon Semiconductors] ; symposium held April 21 - 24, 1987, Anaheim, Calif., USA eds.: A. Madan ... Pittsburgh, Pa. 1987 XXIII, 670 S. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 95 Silicium (DE-588)4077445-4 gnd rswk-swf Amorpher Zustand (DE-588)4306087-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1987 Anaheim Calif. gnd-content Silicium (DE-588)4077445-4 s Amorpher Zustand (DE-588)4306087-0 s DE-604 Madan, Arun Sonstige oth Symposium on Amorphous Silicon Semiconductors - Pure and Hydrogenated 1987 Anaheim, Calif. Sonstige (DE-588)5026057-1 oth Materials Research Society: Materials Research Society symposia proceedings 95 (DE-604)BV001899105 95 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006138790&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Amorphous silicon semiconductors - pure and hydrogenated [Symposium on Amorphous Silicon Semiconductors] ; symposium held April 21 - 24, 1987, Anaheim, Calif., USA Materials Research Society: Materials Research Society symposia proceedings Silicium (DE-588)4077445-4 gnd Amorpher Zustand (DE-588)4306087-0 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4306087-0 (DE-588)1071861417 |
| title | Amorphous silicon semiconductors - pure and hydrogenated [Symposium on Amorphous Silicon Semiconductors] ; symposium held April 21 - 24, 1987, Anaheim, Calif., USA |
| title_auth | Amorphous silicon semiconductors - pure and hydrogenated [Symposium on Amorphous Silicon Semiconductors] ; symposium held April 21 - 24, 1987, Anaheim, Calif., USA |
| title_exact_search | Amorphous silicon semiconductors - pure and hydrogenated [Symposium on Amorphous Silicon Semiconductors] ; symposium held April 21 - 24, 1987, Anaheim, Calif., USA |
| title_full | Amorphous silicon semiconductors - pure and hydrogenated [Symposium on Amorphous Silicon Semiconductors] ; symposium held April 21 - 24, 1987, Anaheim, Calif., USA eds.: A. Madan ... |
| title_fullStr | Amorphous silicon semiconductors - pure and hydrogenated [Symposium on Amorphous Silicon Semiconductors] ; symposium held April 21 - 24, 1987, Anaheim, Calif., USA eds.: A. Madan ... |
| title_full_unstemmed | Amorphous silicon semiconductors - pure and hydrogenated [Symposium on Amorphous Silicon Semiconductors] ; symposium held April 21 - 24, 1987, Anaheim, Calif., USA eds.: A. Madan ... |
| title_short | Amorphous silicon semiconductors - pure and hydrogenated |
| title_sort | amorphous silicon semiconductors pure and hydrogenated symposium on amorphous silicon semiconductors symposium held april 21 24 1987 anaheim calif usa |
| title_sub | [Symposium on Amorphous Silicon Semiconductors] ; symposium held April 21 - 24, 1987, Anaheim, Calif., USA |
| topic | Silicium (DE-588)4077445-4 gnd Amorpher Zustand (DE-588)4306087-0 gnd |
| topic_facet | Silicium Amorpher Zustand Konferenzschrift 1987 Anaheim Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006138790&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
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