Advanced III-V semiconductor materials technology assessment:
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English |
Veröffentlicht: |
Park Ridge, NJ
Noyes
1984
|
Schlagworte: | |
Beschreibung: | XVI, 220 S. Ill., graph. Darst. |
ISBN: | 081550974X |
Internformat
MARC
LEADER | 00000nam a2200000 c 4500 | ||
---|---|---|---|
001 | BV009218755 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | t | ||
008 | 940313s1984 ad|| |||| 00||| eng d | ||
020 | |a 081550974X |9 0-8155-0974-X | ||
035 | |a (OCoLC)10100870 | ||
035 | |a (DE-599)BVBBV009218755 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
049 | |a DE-29T |a DE-11 | ||
050 | 0 | |a TK7876 | |
082 | 0 | |a 621.381/33 |2 19 | |
245 | 1 | 0 | |a Advanced III-V semiconductor materials technology assessment |c Hrsg. von M. Nowogrodzki* |
264 | 1 | |a Park Ridge, NJ |b Noyes |c 1984 | |
300 | |a XVI, 220 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
650 | 4 | |a Gallium arsenide semiconductors | |
650 | 4 | |a Microwave devices | |
650 | 4 | |a Microwave transistors | |
650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
689 | 1 | |8 1\p |5 DE-604 | |
700 | 1 | |a Nowogrodzki, M. |e Sonstige |4 oth | |
999 | |a oai:aleph.bib-bvb.de:BVB01-006128648 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804123661000507392 |
---|---|
any_adam_object | |
building | Verbundindex |
bvnumber | BV009218755 |
callnumber-first | T - Technology |
callnumber-label | TK7876 |
callnumber-raw | TK7876 |
callnumber-search | TK7876 |
callnumber-sort | TK 47876 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
ctrlnum | (OCoLC)10100870 (DE-599)BVBBV009218755 |
dewey-full | 621.381/33 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.381/33 |
dewey-search | 621.381/33 |
dewey-sort | 3621.381 233 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01327nam a2200397 c 4500</leader><controlfield tag="001">BV009218755</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">940313s1984 ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">081550974X</subfield><subfield code="9">0-8155-0974-X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)10100870</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV009218755</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield><subfield code="a">DE-11</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7876</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381/33</subfield><subfield code="2">19</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Advanced III-V semiconductor materials technology assessment</subfield><subfield code="c">Hrsg. von M. Nowogrodzki*</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Park Ridge, NJ</subfield><subfield code="b">Noyes</subfield><subfield code="c">1984</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XVI, 220 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium arsenide semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microwave devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microwave transistors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nowogrodzki, M.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-006128648</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
id | DE-604.BV009218755 |
illustrated | Illustrated |
indexdate | 2024-07-09T17:33:19Z |
institution | BVB |
isbn | 081550974X |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006128648 |
oclc_num | 10100870 |
open_access_boolean | |
owner | DE-29T DE-11 |
owner_facet | DE-29T DE-11 |
physical | XVI, 220 S. Ill., graph. Darst. |
publishDate | 1984 |
publishDateSearch | 1984 |
publishDateSort | 1984 |
publisher | Noyes |
record_format | marc |
spelling | Advanced III-V semiconductor materials technology assessment Hrsg. von M. Nowogrodzki* Park Ridge, NJ Noyes 1984 XVI, 220 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Gallium arsenide semiconductors Microwave devices Microwave transistors Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s DE-604 Halbleitertechnologie (DE-588)4158814-9 s 1\p DE-604 Nowogrodzki, M. Sonstige oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Advanced III-V semiconductor materials technology assessment Gallium arsenide semiconductors Microwave devices Microwave transistors Halbleitertechnologie (DE-588)4158814-9 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
subject_GND | (DE-588)4158814-9 (DE-588)4150649-2 |
title | Advanced III-V semiconductor materials technology assessment |
title_auth | Advanced III-V semiconductor materials technology assessment |
title_exact_search | Advanced III-V semiconductor materials technology assessment |
title_full | Advanced III-V semiconductor materials technology assessment Hrsg. von M. Nowogrodzki* |
title_fullStr | Advanced III-V semiconductor materials technology assessment Hrsg. von M. Nowogrodzki* |
title_full_unstemmed | Advanced III-V semiconductor materials technology assessment Hrsg. von M. Nowogrodzki* |
title_short | Advanced III-V semiconductor materials technology assessment |
title_sort | advanced iii v semiconductor materials technology assessment |
topic | Gallium arsenide semiconductors Microwave devices Microwave transistors Halbleitertechnologie (DE-588)4158814-9 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
topic_facet | Gallium arsenide semiconductors Microwave devices Microwave transistors Halbleitertechnologie Drei-Fünf-Halbleiter |
work_keys_str_mv | AT nowogrodzkim advancediiivsemiconductormaterialstechnologyassessment |