Holdings: Semiconductor device modeling with SPICE

Semiconductor device modeling with SPICE:

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Bibliographic Details
Format:	Book
Language:	English
Published:	New York u.a. McGraw-Hill 1993
Edition:	2. ed.
Subjects:	Halbleiterbauelement - Entwurf - SPICE <Programm> Schaltungsentwurf SPICE > Programm Halbleiterbauelement Entwurf
Online Access:	Inhaltsverzeichnis Inhaltsverzeichnis
Physical Description:	XIV, 479 S. Ill., graph. Darst.
ISBN:	0070024693

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MARC


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245	1	0	\|a Semiconductor device modeling with SPICE \|c Guiseppe Massobrio ... [ed.]
250			\|a 2. ed.
264		1	\|a New York u.a. \|b McGraw-Hill \|c 1993
300			\|a XIV, 479 S. \|b Ill., graph. Darst.
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700	1		\|a Massobrio, Giuseppe \|e Sonstige \|4 oth
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Record in the Search Index

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adam_text	SEMICONDUCTOR DEVICE MODELING WITH SPICE GIUSEPPE MASSOBRIO DEPARTMENT OF ELECTRONICS {DIBE) UNIVERSITY OF GENOVA GENOVA, ITALY PAOLO ANTOGNETTI DEPARTMENT OF ELECTRONICS (DIBE) UNIVERSITY OF GENOVA GENOVA, ITALY SECOND EDITION MCGRAW-HILL, INC. NEW YORK SAN FRANCISCO WASHINGTON, D.C. AUCKLAND BOGOTA CARACAS LISBON LONDON MADRID MEXICO CITY MILAN MONTREAL NEW DELHI SAN JUAN SLNGAPORE SYDNEY TOKYO TORONTO CONTENTS LIST OF PHYSICAL PARAMETERS IX FOREWORD BY ROBERT W. BUTTON, STANFORD UNIVERSITY XI PREFACE XIII CHAPTER 1. P/V-JUNCTION DIODE AND SCHOTTKY DIODE 1 1.1 DC CURRENT-VOLTAGE CHARACTERISTICS 1 1.2 STATIC MODEL 11 1.3 LARGE-SIGNAL MODEL 19 1.4 SMALL-SIGNAL MODEL 23 1.5 SCHOTTKY DIODE AND ITS IMPLEMENTATION IN SPICE2 26 1.6 TEMPERATURE AND AREA EFFECTS ON FHE DIODE MODEL PARAMETERS 28 1.7 SPICE3 MODELS 31 1.8 HSPICE MODELS 31 1.9 PSPICE MODELS 40 REFERENCES 42 CHAPTER 2. BIPOLAR JUNCTION TRANSISTOR (BJT) 45 2.1 TRANSISTOR CONVENTIONS AND SYMBOLS 46 2.2 EBERS-MOLL STATIC MODEL 48 2.3 EBERS-MOLL LARGE-SIGNAL MODEL 62 2.4 EBERS-MOLL SMALL-SIGNAL MODEL 70 2.5 GUMMEL-POON STATIC MODEL 74 2.6 GUMMEL-POON LARGE-SIGNAL MODEL 96 2.7 GUMMEL-POON SMALL-SIGNAL MODEL 101 2.8 TEMPERATURE AND AREA EFFECTS ON THE BJT MODEL PARAMETERS 105 2.9 POWER BJT MODEL 109 2.10 SPICE3 MODELS 118 2.11 HSPICE MODELS 118 2.12 PSPICE MODELS 128 REFERENCES 129 VI CONTENTS CHAPTER 3. JUNCTION FIELD-EFFECT TRANSISTOR (JFET) 131 3.1 STATIC MODEL 132 3.2 LARGE-SIGNAL MODEL AND ITS IMPLEMENTATION IN SPICE2 146 3.3 SMALL-SIGNAL MODEL AND ITS IMPLEMENTATION IN SPICE2 148 3.4 TEMPERATURE AND AREA EFFECTS ON THE JFET MODEL PARAMETERS 150 3.5 SPICE3 MODELS 152 3.6 HSPICE MODELS 152 3.7 PSPICE MODELS 156 REFERENCES 158 CHAPTER 4. METAL-OXIDE-SEMICONDUCTOR TRANSISTOR (MOST) 161 4.1 STRUCTURE AND OPERATING REGIONS OF THE MOST 161 4.2 LEVEL1 STATIC MODEL 168 4.3 LEVEL2 STATIC MODEL 180 4.4 LEVEL1 AND LEVEL2 LARGE-SIGNAL MODEL 195 4.5 LEVEL3 STATIC MODEL 202 4.6 LEVEL3 LARGE-SIGNAL MODEL 210 4.7 COMMENTS ON THE THREE MODELS 211 4.8 THE EFFECT OF SERIES RESISTANCES 212 4.9 SMALL-SIGNAL MODELS 213 4.10 THE EFFECT OF TEMPERATURE ON THE MOST MODEL PARAMETERS 215 4.11 BSIM1 MODEL 216 4.12 BSIM2 MODEL 234 4.13 SPICE3 MODELS 240 4.14 HSPICE MODELS 242 4.15 PSPICE MODELS 246 REFERENCES 247 CHAPTER 5. BJT PARAMETER MEASUREMENTS 251 5.1 INPUT AND MODEL PARAMETERS 251 5.2 PARAMETER MEASUREMENTS 253 REFERENCES 265 CHAPTER 6. MOST PARAMETER MEASUREMENTS 267 6.1 LEVEL1 MODEL PARAMETERS 267 6.2 LEVEL2 MODEL (LONG-CHANNEL) PARAMETERS 273 6.3 LEVEL2 MODEL (SHORT-CHANNEL) PARAMETERS 279 6.4 LEVEL3 MODEL PARAMETERS 289 6.5 MEASUREMENTS OF CAPACITANCE 295 6.6 BSIM MODEL PARAMETER EXTRACTION 298 REFERENCES 298 CONTENTS VII CHAPTER 7. NOISE AND DISTORTION 299 7.1 NOISE 2M 7.2 DISTORTION 309 REFERENCES 324 CHAPTER 8. THE SPICE PROGRAM 325 8.1 SPICE2 CAPABILITIES 325 8.2 SPICE2 STRUCTURE 333 8.3 CONVERGENCE PROBLEMS 354 8.4 SPICE2 OPERATION 357 8.5 LINKED-LIST SPECIFICATION 361 8.6 SPICE3 CAPABILITIES VERSUS SPICE2 371 8.7 HSPICE CAPABILITIES VERSUS SPICE2 371 8.8 PSPICE CAPABILITIES VERSUS SPICE2 372 REFERENCES 373 CHAPTER 9. METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, ION-SENSITIVE FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR-CONTROLLED RECTIFIER 375 9.1 MESFET 376 9.2 ISFET 390 9.3 THYRISTOR 400 REFERENCES 408 APPENDIX A. PN JUNCTION 411 A.1 ELEMENTS OF SEMICONDUCTOR PHYSICS 411 A.2 PHYSICAL OPERATION OF THE PN JUNCTION 421 REFERENCES 444 APPENDIX B. MOS JUNCTION 445 B.1 MOS JUNCTION 445 REFERENCES 469 APPENDIX C. MS JUNCTION 471 C.1 MS JUNCTION 471 REFERENCES 473 INDEX 475
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bvnumber	BV009107581
callnumber-first	T - Technology
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ctrlnum	(OCoLC)299752149 (DE-599)BVBBV009107581
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dewey-tens	620 - Engineering and allied operations
discipline	Physik Informatik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik
edition	2. ed.
format	Book
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isbn	0070024693
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spelling	Semiconductor device modeling with SPICE Guiseppe Massobrio ... [ed.] 2. ed. New York u.a. McGraw-Hill 1993 XIV, 479 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Halbleiterbauelement - Entwurf - SPICE <Programm> Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf SPICE Programm (DE-588)4237438-8 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Entwurf (DE-588)4121208-3 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s Entwurf (DE-588)4121208-3 s SPICE Programm (DE-588)4237438-8 s DE-604 Schaltungsentwurf (DE-588)4179389-4 s 1\p DE-604 Massobrio, Giuseppe Sonstige oth http://www3.ub.tu-berlin.de/ihv/000226643.pdf Inhaltsverzeichnis GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006038446&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk
spellingShingle	Semiconductor device modeling with SPICE Halbleiterbauelement - Entwurf - SPICE <Programm> Schaltungsentwurf (DE-588)4179389-4 gnd SPICE Programm (DE-588)4237438-8 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Entwurf (DE-588)4121208-3 gnd
subject_GND	(DE-588)4179389-4 (DE-588)4237438-8 (DE-588)4113826-0 (DE-588)4121208-3
title	Semiconductor device modeling with SPICE
title_auth	Semiconductor device modeling with SPICE
title_exact_search	Semiconductor device modeling with SPICE
title_full	Semiconductor device modeling with SPICE Guiseppe Massobrio ... [ed.]
title_fullStr	Semiconductor device modeling with SPICE Guiseppe Massobrio ... [ed.]
title_full_unstemmed	Semiconductor device modeling with SPICE Guiseppe Massobrio ... [ed.]
title_short	Semiconductor device modeling with SPICE
title_sort	semiconductor device modeling with spice
topic	Halbleiterbauelement - Entwurf - SPICE <Programm> Schaltungsentwurf (DE-588)4179389-4 gnd SPICE Programm (DE-588)4237438-8 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Entwurf (DE-588)4121208-3 gnd
topic_facet	Halbleiterbauelement - Entwurf - SPICE <Programm> Schaltungsentwurf SPICE Programm Halbleiterbauelement Entwurf
url	http://www3.ub.tu-berlin.de/ihv/000226643.pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006038446&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv	AT massobriogiuseppe semiconductordevicemodelingwithspice

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