Field effect transistor applications:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
London
Heywood
1964
|
| Schlagworte: | |
| Beschreibung: | X, 143 S. |
Internformat
MARC
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| 245 | 1 | 0 | |a Field effect transistor applications |
| 264 | 1 | |a London |b Heywood |c 1964 | |
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Datensatz im Suchindex
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|---|---|
| any_adam_object | |
| author | Gosling, William |
| author_facet | Gosling, William |
| author_role | aut |
| author_sort | Gosling, William |
| author_variant | w g wg |
| building | Verbundindex |
| bvnumber | BV009045804 |
| ctrlnum | (OCoLC)319991779 (DE-599)BVBBV009045804 |
| format | Book |
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| id | DE-604.BV009045804 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T17:29:11Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005986378 |
| oclc_num | 319991779 |
| open_access_boolean | |
| owner | DE-29T DE-91 DE-BY-TUM |
| owner_facet | DE-29T DE-91 DE-BY-TUM |
| physical | X, 143 S. |
| publishDate | 1964 |
| publishDateSearch | 1964 |
| publishDateSort | 1964 |
| publisher | Heywood |
| record_format | marc |
| spelling | Gosling, William Verfasser aut Field effect transistor applications London Heywood 1964 X, 143 S. txt rdacontent n rdamedia nc rdacarrier Transistors Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s DE-604 |
| spellingShingle | Gosling, William Field effect transistor applications Transistors Halbleiterbauelement (DE-588)4113826-0 gnd |
| subject_GND | (DE-588)4113826-0 |
| title | Field effect transistor applications |
| title_auth | Field effect transistor applications |
| title_exact_search | Field effect transistor applications |
| title_full | Field effect transistor applications |
| title_fullStr | Field effect transistor applications |
| title_full_unstemmed | Field effect transistor applications |
| title_short | Field effect transistor applications |
| title_sort | field effect transistor applications |
| topic | Transistors Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Transistors Halbleiterbauelement |
| work_keys_str_mv | AT goslingwilliam fieldeffecttransistorapplications |