Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications:
Saved in:
| Corporate Author: | |
|---|---|
| Format: | Conference Proceeding Book |
| Language: | English |
| Published: |
Pennington, NJ
Electrochemical Soc.
1992
|
| Series: | Electrochemical Society: Proceedings
1992,7 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Literaturangaben |
| Physical Description: | IX, 498 S. Ill., graph. Darst. |
| ISBN: | 1566770084 |
Staff View
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV008269421 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 931013s1992 ad|| |||| 10||| engod | ||
| 020 | |a 1566770084 |9 1-56677-008-4 | ||
| 035 | |a (OCoLC)26254235 | ||
| 035 | |a (DE-599)BVBBV008269421 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.3815/2 |2 20 | |
| 084 | |a ZN 4192 |0 (DE-625)157372: |2 rvk | ||
| 084 | |a ELT 216f |2 stub | ||
| 084 | |a ELT 356f |2 stub | ||
| 111 | 2 | |a International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications |n 1 |d 1991 |c Phoenix, Ariz. |j Verfasser |0 (DE-588)5071443-0 |4 aut | |
| 245 | 1 | 0 | |a Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications |c ed. by Ulrich Gösele ... |
| 246 | 1 | 3 | |a Semiconductor wafer bonding: science, technology, and applications |
| 264 | 1 | |a Pennington, NJ |b Electrochemical Soc. |c 1992 | |
| 300 | |a IX, 498 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Electrochemical Society: Proceedings |v 1992,7 | |
| 500 | |a Literaturangaben | ||
| 650 | 7 | |a Plaquettes à gravure en semiconducteurs |2 ram | |
| 650 | 7 | |a Semiconducteurs |2 ram | |
| 650 | 4 | |a Semiconductor wafers |v Congresses | |
| 650 | 4 | |a Semiconductors |x Bonding |v Congresses | |
| 650 | 0 | 7 | |a Wafer |0 (DE-588)4294605-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Bonden |0 (DE-588)4232594-8 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1991 |z Phoenix Ariz. |2 gnd-content | |
| 689 | 0 | 0 | |a Wafer |0 (DE-588)4294605-0 |D s |
| 689 | 0 | 1 | |a Bonden |0 (DE-588)4232594-8 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Gösele, Ulrich |d 1949-2009 |e Sonstige |0 (DE-588)108522024 |4 oth | |
| 830 | 0 | |a Electrochemical Society: Proceedings |v 1992,7 |w (DE-604)BV001900941 |9 1992,7 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005462769&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-005462769 | ||
Record in the Search Index
| _version_ | 1804122665011642368 |
|---|---|
| adam_text | TABLE
OF
CONTENTS
PREFACE
.....................................................................................
ій
OVERVIEW
AND BASIC
PHYSICS
.......................................................1
♦SEMICONDUCTOR WAFER BONDING: AN OVERVIEW,
W. P. Maszara
............................................................................3
»DIVERSITY AND
INTERFACIAL
PHENOMENON IN DIRECT BONDING,
G.A.C.M. Spierings and J. Haisma
..... ..............................................18
»BASIC PHYSICS OF INTERACTIONS BETWEEN SURFACES IN DRY,
HUMID AND AQUEOUS ENVIRONMENTS, J. Israelachvili,
P. McGuiggan, and R.Horn
...........................................................33
*A MECHANSIM OF SILICON WAFER BONDING, M. Harinchi
andS.Aoki
...............................................................................48
BONDING
.....................................................................................63
♦GENERALIZED REACTION BONDING, G. G. Goctz
................................65
MICROSTRUCTURES TOR PERFECT WAFER BONDING IN
DIFFERENT TEMPERATURE RANGES, W. Kissinger
andG. Kissinger
.........................................................................73
BOND STRENGTH MEASUREMENTS RELATED TO SILICON
SURFACE
HYDROPHÍLICrrY,
Y.
Bäcklund, K. Heimansson,
and L. Smith
..............................................................................82
LOW TEMPERATURE SILICON WAFER BONDING FOR
MICROMECHANICAL APPLICATIONS, H. -J. Quenzer
andW.
Benecke..........................................................................92
STUDIES
ON MICRO
VOTOS
AT THE INTERFACE OF DIRECT BONDED
SILICON WAFERS, S. J. Yun, K.-Y.
Ahn, K.-S.
Yi,
and S.-W. Kang
..........................................................................102
LATERAL GAP DIFFUSION (LGD)
Ш
SILICON WAFER DIRECT
BONDING TECHNOLOGY,
Q
Y. Tmg, H.-Z. Zhang, and M. Gin
...........112
*
VAN
DER W
AALS
BONDED
Ш
-V
FILMS FOR OPTOELECTRONICS,
W. K. Chun and E. Yabtenoviteh
..................................................„..123
STRESS IN GaAs BONDED TO SILICON, M. E. Grupeo-Shcmaasky,
G.
W.
Hawkins awl
Η. Μ.
Law
......................................................132
WAFER BONDING BY LOW TEMPERATURE MELTING GLASS,
W. P. Eaton, S. H. Risbud, and R. L. Smith
........................................146
INVESTIGATION OF WAFER BONDING WITH BPSG SURFACES, J.
Tiren,
К.
E. Bohlin
and
G. Alestig
............................................................153
THINNING
...................................................................................163
»THINNING OF BONDED WAFERS: ETCH-STOP APPROACHES,
Ch.E. Hunt and C. A. Desmond
.......................................................165
SILICON ON INSULATOR FABRICATION FROM WAFER BONDING
AND SELECTIVE ETCHING TECHNIQUES USING A SILICON-
GERMANIUM ALLOY ETCH STOP, D. Godbey, A. Krist, H. Hughes,
P. Thompson, P. Leonov, E. King, T. Wang, andL.Palkuti
.....................174
ISSUES REGARDING THE APPLICATION OF THE ELECTROCHEMICAL
ETCH-STOP TECHNIQUE TO FABRICATE
MICROSTRUCTURES
USING WAFER BONDING, V. M. McNeil,
S. S. Wang,
and M. A. Schmidt
.......................................................................180
SILICON ETCH STOP FORMED BY NITROGEN IMPLANTATION,
A. Söderbärg
.............................................................................190
»WAFER THINNING WITHOUT AN ETCHSTOP DOWN TO
0.1
firn,
T.Abe, A. Uchiyama and Y. Nakazato
...............................................200
A NOVEL ETCH STOP METHOD AIMED FOR SOI AND THIN
MEMBRANES FABRICATION,
A. Söderbärg
and L. Smith
....................211
POLYSILICON
BONDING AND NON-ELECTRONIC
APPLICATIONS
.....................................................................221
POLYSILICON
TO SILICON BONDING IN LAMINATED
DIELECTRICALLY ISOLATED (LDI) WAFERS, W. G. Easter,
G. T. Jones, R. H. Shanaman, and
С
A. Goodwin
................................223
PRESTRESSING OF BONDED WAFERS,
D. Feijóo,
I. Ong, K.
Milani,
W.-S. Wang, S. Yu and U.
Gösele...................................................230
FABRICATION ISSUES IN THE DESIGN OF SEALED
CAVITY
MICROSTRUCTURES
USING SILICON WAFER BONDING,
M. A. Huff, A. D. Nikolich, and M. A. Schmidt
....................................239
SILICON WAFERS WITH CAVITIES BONDED IN DIFFERENT
ATMOSPHERES,
G. Cha,
W.-S. Yang, D.
Feijóo,
W. J.
Taylor,
R.
Stengl and
U.
Gösele
................................................................249
»SURFACE PROTECTION BY SEMICONDUCTOR WAFER BONDING,
K.
Milani,
V.
Lehmann,
and
Q.-Y.
Tong
.............................................260
vi
DETECTION OF VOLATILE ORGANIC SURFACE CONTAMINATIONS
ARISING FROM WAFER BOXES AND CLEANING PROCESSES,
K. J. Budde, and W. J.
Holzapfel.....................................................271
THE USE OF DIRECT WAFER BONDING FOR THE FABRICATION
OF THIN SILICON SOLAR CELLS WITH OPTICAL CONFINEMENT,
E. Demesmaeker, M. Ghannam, J. Nijs, and R. Mertens
..........................287
INTERFACE PROPERTIES
.............................................................293
♦ELECTRICAL CHARACTERIZATION OF BONDING INTERFACES,
O. Engström
and
S
.
Bengtsson........................................................
295
SILICON WAFER BONDING PROCESS CHARACTERISATION BY
THE SPREADING RESISTANCE AND POINT CONTACT IV
TECHNIQUES, T. Abe, K. Ohki, M. Pawiik, J. M. Heddleson,
R. T. Hillard, and P. Rai-Cnoudury
...................................................311
CHARACTERISATION OF ELECTRONIC DEVICES EMPLOYING
SILICON BONDING TECHNOLOGY, C.
Paites,
E.
Murray,
H. S.
Gamble,
Β. Μ.
Armstrong,
S. T.
N.
Mitchell
and G. A.
Armstrong.
.....321
GAMMA RADIATION EFFECTS ON BREAKDOWN OF BOND AND ETCH
BACK SOI CAPACITORS,
N.
K. Annamalai andT- Chapski
...................331
OXIDE DEGRADATION OF WAFER BONDED
MOS
CAPACITORS
FOLLOWING FOWLER-NORDHEIM ELECTRON INJECTION,
S.
Bengtsson,
A. Jauhiainen, and
Olaf
Engström...................................
339
GAMMA RADIATION EFFECTS ON BREAKDOWN OF BOND AND
ETCH BACK SOI CAPACITORS,
N.
K. Annamalai and J. Chapski
...........331
OXIDE DEGRADATION OF WAFER BONDED
MOS
CAPACITORS FOLLOWING
FOWLER-NORDHEIM ELECTRON INJECTION, S.
Bengtsson,
A. Tauhiasnen and
Olaf
Engström.....................................................
339
INVESTIGATION ON NEGATIVE CHARGES IN BONDED SOI STRUCTURES,
Z. Chen, Q.-Y.
Tong,
Η. -Ζ.
Zheng and
M. Qing
..................................349
ESTIMATION OF NEGATIVE CHARGES IN THE OXIDE OF SOI MATERIALS
BY WAFER BONDING TECHNOLOGY, K.
Milani
and
Η. Ζ.
Massoud
......355
ELECTRON BEAM INDUCED CURRENT (EBIQ AND PLANAR TRANSMISSION
ELECTRON MICROSCOPY
(ТЕМ)
TECHNIQUES FOR EVALUTING
SILICON WAFER BONDING,
G. C
.
Pcrreault, S. L.
Нуіаікі,
and D. G.
Ast
.............................................................................365
LIGHT SCATTERING TOPOGRAPHY CHARACTERIZATION OF BONDED/SOI
WAFERS, H.
Baumgart,
E.
F. Steigmeier,
Η.
Auderset,
T.
Abe,
T. J.
Létavic,
R. D.
Pinker,
and
E. Arnold
............................................................375
vii
PROCESSING AND DEVICES
........................................................395
*
THERMOMECHANICAL
DEVICE
PROCESSING ISSUES
Ш
BONDED
SOI
WAFERS,
T. J.
Létavic,
H.
Baumgan, R.
Pinker, S. Merchant,
and
E.
Arnold
.............................................................................397
*
ADVANCED BIPOLAR AND
MOS
DEVICES BASED ON SILICON WAFER
BONDING, Y. Arimoto, S. Hijiya, and T.
Ito
......................................414
INFLUENCE OF THE
BACKGATE-
VOLTAGE ON THE BREAKDOWN-VOLTAGE
OF SOI POWER DEVICES, W. Wondrak, E. sTein andR.
НеИ
................427
IMPROVEMENT OF SILICON TOWER DEVICE CHARACTERISTICS USING
BONDING TECHNOLOGY, R. Wilson, H. S. Gamble
and S. I.
N.
Mitchell
....................................................................433
A BONDED-SOI BIPOLAR PROCESS TECHNOLOGY, K.
Watenabe,
T.
Hashimoto,
M. Yoshida, M.
Usami,
Y. Sakai and T. Ikeda.
...................443
*
HIGH
PERFORMANCE SOI MOSFETS
MADE BY
SILICON
WAFER
BONDING,
M.
Yoshimi
and M.
Takahashi
..........................................452
TECHNOLOGICAL CONSIDERATIONS OF THREE DIMENSIONAL
CMOS DEVICES FORMED BY ALIGNED WAFER BONDING,
M. S. Ismaii and R. W. Bower
........................................................474
AUTHOR INDEX
...........................................................................487
SUBJECT INDEX
..........................................................................489
viii
AUTHOR INDEX
Abe,
Τ
200,311,
375
Ahn, K.-Y.
102
Gamble,
H. S.
321,433
Akinwande, A. I,
386
Ghannam, M.
287
Alestig, G.
153
Godbey, D.
174,467
Annamalai,
N.
K.
331
Goetz, G. G.
65
Aoki, S.
48
Goodwin,
С. А.
223
Arimoto, Y.
414
Gösele, U.
230, 249
Armstrong,
Β . Μ.
321
Grupen-Shemansky,
M.
132
Armstrong, G. A.
321
Arnold, E.
375,
397
H
Ast,
D. G.
365
Auderset,
H.
375
Haisma,
J.
18
Hashimoto,
T.
443
В
Hawkins,
G.
W.
132
Heddleson, J. M.
311
Baumgart,
H.
375,
397
Held, R.
427
Bäcklund,
Y.
82
Hermansson, K.
82
Benecke, W.
92
Hijiya,
S.
414
Bengtsson,
S.
295,
339
Hillard,
R. J.
311
Bohlin,
Κ. Ε.
153
Holzapfel,
W. J.
271
Bower,
R.
W.
474
Horiuchi,
M.
48
Buddę,
K. J.
271
Horn, R.
33
Burns, D.
W.
386
Horning,
R. D.
386
Huang,
D. H.
467
С
Huff,
M. A.
239
Hughes, H.
174, 467
Campisi,
G. J.
467
Hunt,
Ch. E.
165
Cha,
G.
249
Hyland, S. L.
365
Chan,
K. Ch.
123
Chapski, J.
331
I
Chen,
Z.
349
Ikeda.T.
443
D
Ismail,
M. S.
474
Israelachivili,
J.
33
Demesmaeker, E.
287
Ito,
T.
414
Desmond,
C. A.
165
J
E
Jauhiainen, A.
339
Easter,
W.
G.
223
Jones,
G. T.
223
Eaton,
W.
P.
146
Engström,
0.
295,
339
К
F
Kang,
S.-W.
102
King, E.
174, 467
Feijóo, D
249,
230
Kissinger,
G.
73
487
Kissinger, W.
73
Krist,
Α.
174
S
К
Sakai» Y.
443
Schmidt,
M. A.
180, 239
Lehmann,
V.
260
Shanaman, R. H.
223
Leonov,
P.
174,
467
Smith, L.
82,211
Létavic,
T. j.
375,
397
Smith, R. L.
146
Liaw,
H. M.
132
Söderbärg,
A.
190,211
Spierings, G. A. C.
M.
18
M
Steigmeier, E. F.
375
Stein,
E.
427
Massoud, H. Z.
355
Stengl, R
249
Maszara, W. P.
3
McGuiggan, P.
33
T
McNeil, V.
M
180
Merchant,
S.
39?
Takahashi, M.
452
Mertens, R,
287
Taylor,
W. J.
249
Miteni,
К.
230, 260,
355
Thompson, P.
174
Mitchell,
S.
J. N.
321,
433
Tirén, J.
153
Murray,
E.
321
Tong,
Q.-Y.
112,260,349
N
U
Nakatzato, Y.
200
Uchiyama, A.
200
Níjs, j.
NUcolich, A. D.
287
Usami,
M.
443
239
W
O
Wahg, J.
174
Ohki, K.
311
Wang, S.
S.
180
Ortg.1.
230
Watanabc, K.
443
Wilson,
R.
433
P
Wondrak, W.
427
Palkuti, L.
174,
467
Y
Parkes,
C.
321
PawHk, M.
311
Yablonovitch, E.
123
Perreauh, G. C.
365
Yang, W.-S.
230, 249
Pinker,
R.
375,
397
Yi,
K.-S.
102
Yoshida, M.
443
Q
Yoshimi, M.
452
Yu, S.
230
Qmg, M,
349
Yun, S. J.
102
Quenzer, H. J.
92
Quin, M.
112
Z
R
Zhang, H.-Z.
112
Zheng, H.-Z.
349
Rai-Choudury, P.
311
Risbud, S. H.
146
488
|
| any_adam_object | 1 |
| author_GND | (DE-588)108522024 |
| author_corporate | International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications Phoenix, Ariz |
| author_corporate_role | aut |
| author_facet | International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications Phoenix, Ariz |
| author_sort | International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications Phoenix, Ariz |
| building | Verbundindex |
| bvnumber | BV008269421 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4192 |
| classification_tum | ELT 216f ELT 356f |
| ctrlnum | (OCoLC)26254235 (DE-599)BVBBV008269421 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02221nam a2200505 cb4500</leader><controlfield tag="001">BV008269421</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">931013s1992 ad|| |||| 10||| engod</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1566770084</subfield><subfield code="9">1-56677-008-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)26254235</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV008269421</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4192</subfield><subfield code="0">(DE-625)157372:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 216f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 356f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications</subfield><subfield code="n">1</subfield><subfield code="d">1991</subfield><subfield code="c">Phoenix, Ariz.</subfield><subfield code="j">Verfasser</subfield><subfield code="0">(DE-588)5071443-0</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications</subfield><subfield code="c">ed. by Ulrich Gösele ...</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Semiconductor wafer bonding: science, technology, and applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Pennington, NJ</subfield><subfield code="b">Electrochemical Soc.</subfield><subfield code="c">1992</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">IX, 498 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Electrochemical Society: Proceedings</subfield><subfield code="v">1992,7</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Plaquettes à gravure en semiconducteurs</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor wafers</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Bonding</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Wafer</subfield><subfield code="0">(DE-588)4294605-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Bonden</subfield><subfield code="0">(DE-588)4232594-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1991</subfield><subfield code="z">Phoenix Ariz.</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Wafer</subfield><subfield code="0">(DE-588)4294605-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Bonden</subfield><subfield code="0">(DE-588)4232594-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gösele, Ulrich</subfield><subfield code="d">1949-2009</subfield><subfield code="e">Sonstige</subfield><subfield code="0">(DE-588)108522024</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Electrochemical Society: Proceedings</subfield><subfield code="v">1992,7</subfield><subfield code="w">(DE-604)BV001900941</subfield><subfield code="9">1992,7</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung TU Muenchen</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005462769&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-005462769</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1991 Phoenix Ariz. gnd-content |
| genre_facet | Konferenzschrift 1991 Phoenix Ariz. |
| id | DE-604.BV008269421 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:17:29Z |
| institution | BVB |
| institution_GND | (DE-588)5071443-0 |
| isbn | 1566770084 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005462769 |
| oclc_num | 26254235 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | IX, 498 S. Ill., graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | Electrochemical Soc. |
| record_format | marc |
| series | Electrochemical Society: Proceedings |
| series2 | Electrochemical Society: Proceedings |
| spelling | International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 1 1991 Phoenix, Ariz. Verfasser (DE-588)5071443-0 aut Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications ed. by Ulrich Gösele ... Semiconductor wafer bonding: science, technology, and applications Pennington, NJ Electrochemical Soc. 1992 IX, 498 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electrochemical Society: Proceedings 1992,7 Literaturangaben Plaquettes à gravure en semiconducteurs ram Semiconducteurs ram Semiconductor wafers Congresses Semiconductors Bonding Congresses Wafer (DE-588)4294605-0 gnd rswk-swf Bonden (DE-588)4232594-8 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Phoenix Ariz. gnd-content Wafer (DE-588)4294605-0 s Bonden (DE-588)4232594-8 s DE-604 Gösele, Ulrich 1949-2009 Sonstige (DE-588)108522024 oth Electrochemical Society: Proceedings 1992,7 (DE-604)BV001900941 1992,7 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005462769&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications Electrochemical Society: Proceedings Plaquettes à gravure en semiconducteurs ram Semiconducteurs ram Semiconductor wafers Congresses Semiconductors Bonding Congresses Wafer (DE-588)4294605-0 gnd Bonden (DE-588)4232594-8 gnd |
| subject_GND | (DE-588)4294605-0 (DE-588)4232594-8 (DE-588)1071861417 |
| title | Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications |
| title_alt | Semiconductor wafer bonding: science, technology, and applications |
| title_auth | Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications |
| title_exact_search | Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications |
| title_full | Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications ed. by Ulrich Gösele ... |
| title_fullStr | Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications ed. by Ulrich Gösele ... |
| title_full_unstemmed | Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications ed. by Ulrich Gösele ... |
| title_short | Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications |
| title_sort | proceedings of the first international symposium on semiconductor wafer bonding science technology and applications |
| topic | Plaquettes à gravure en semiconducteurs ram Semiconducteurs ram Semiconductor wafers Congresses Semiconductors Bonding Congresses Wafer (DE-588)4294605-0 gnd Bonden (DE-588)4232594-8 gnd |
| topic_facet | Plaquettes à gravure en semiconducteurs Semiconducteurs Semiconductor wafers Congresses Semiconductors Bonding Congresses Wafer Bonden Konferenzschrift 1991 Phoenix Ariz. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005462769&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001900941 |
| work_keys_str_mv | AT internationalsymposiumonsemiconductorwaferbondingsciencetechnologyandapplicationsphoenixariz proceedingsofthefirstinternationalsymposiumonsemiconductorwaferbondingsciencetechnologyandapplications AT goseleulrich proceedingsofthefirstinternationalsymposiumonsemiconductorwaferbondingsciencetechnologyandapplications AT internationalsymposiumonsemiconductorwaferbondingsciencetechnologyandapplicationsphoenixariz semiconductorwaferbondingsciencetechnologyandapplications AT goseleulrich semiconductorwaferbondingsciencetechnologyandapplications |