MOS (metal oxide semiconductor) physics and technology:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York u.a.
Wiley
1982
|
| Schriftenreihe: | A Wiley-Interscience publication
|
| Schlagworte: | |
| Beschreibung: | XV, 906 S. |
| ISBN: | 0471085006 |
Internformat
MARC
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| 245 | 1 | 0 | |a MOS (metal oxide semiconductor) physics and technology |c E. H. Nicollian ; J. R. Brews |
| 264 | 1 | |a New York u.a. |b Wiley |c 1982 | |
| 300 | |a XV, 906 S. | ||
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| 700 | 1 | |a Brews, John R. |e Verfasser |4 aut | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-005461880 | ||
Datensatz im Suchindex
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|---|---|
| any_adam_object | |
| author | Nicollian, Edward H. Brews, John R. |
| author_facet | Nicollian, Edward H. Brews, John R. |
| author_role | aut aut |
| author_sort | Nicollian, Edward H. |
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| bvnumber | BV008268288 |
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| ctrlnum | (OCoLC)252251222 (DE-599)BVBBV008268288 |
| discipline | Physik Elektrotechnik |
| format | Book |
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| id | DE-604.BV008268288 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T17:17:27Z |
| institution | BVB |
| isbn | 0471085006 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005461880 |
| oclc_num | 252251222 |
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| owner_facet | DE-29T DE-20 DE-91 DE-BY-TUM DE-91G DE-BY-TUM DE-1050 DE-634 DE-83 DE-11 |
| physical | XV, 906 S. |
| publishDate | 1982 |
| publishDateSearch | 1982 |
| publishDateSort | 1982 |
| publisher | Wiley |
| record_format | marc |
| series2 | A Wiley-Interscience publication |
| spelling | Nicollian, Edward H. Verfasser aut MOS (metal oxide semiconductor) physics and technology E. H. Nicollian ; J. R. Brews New York u.a. Wiley 1982 XV, 906 S. txt rdacontent n rdamedia nc rdacarrier A Wiley-Interscience publication MOS (DE-588)4130209-6 gnd rswk-swf MOS (DE-588)4130209-6 s DE-604 Brews, John R. Verfasser aut |
| spellingShingle | Nicollian, Edward H. Brews, John R. MOS (metal oxide semiconductor) physics and technology MOS (DE-588)4130209-6 gnd |
| subject_GND | (DE-588)4130209-6 |
| title | MOS (metal oxide semiconductor) physics and technology |
| title_auth | MOS (metal oxide semiconductor) physics and technology |
| title_exact_search | MOS (metal oxide semiconductor) physics and technology |
| title_full | MOS (metal oxide semiconductor) physics and technology E. H. Nicollian ; J. R. Brews |
| title_fullStr | MOS (metal oxide semiconductor) physics and technology E. H. Nicollian ; J. R. Brews |
| title_full_unstemmed | MOS (metal oxide semiconductor) physics and technology E. H. Nicollian ; J. R. Brews |
| title_short | MOS (metal oxide semiconductor) physics and technology |
| title_sort | mos metal oxide semiconductor physics and technology |
| topic | MOS (DE-588)4130209-6 gnd |
| topic_facet | MOS |
| work_keys_str_mv | AT nicollianedwardh mosmetaloxidesemiconductorphysicsandtechnology AT brewsjohnr mosmetaloxidesemiconductorphysicsandtechnology |